CN110527967A

CN110527967A - Pvd equipment

Info

Publication number: CN110527967A
Application number: CN201910896402.7A
Authority: CN
Inventors: 周云; 宋维聪; 潘钱森; 霍焕俊
Original assignee: Shanghai Betone Semiconductor Energy Technology Co Ltd
Current assignee: Shanghai Betone Semiconductor Energy Technology Co Ltd
Priority date: 2019-09-23
Filing date: 2019-09-23
Publication date: 2019-12-03
Anticipated expiration: 2039-09-23
Also published as: CN110527967B

Abstract

The present invention provides a kind of Pvd equipment, and film is deposited to crystal column surface by exchange or pulsed dc magnetron sputtering；Including cavity, permanent magnetic device, target, cavity adapter, electromagnetic coil and wafer tray；For wafer tray for carrying wafer, wafer tray is connected with radio-frequency power supply to form back bias voltage；Cavity has upper cavity part and lower cavity part, and cavity adapter is connected between upper cavity part and lower cavity part, for increasing the distance between target and wafer tray；Permanent magnetic device is located above target, for generating primary magnetic field to realize magnetron sputtering；Electromagnetic coil is for generating secondary magnetic to increase the plasma density at target rim.The present invention can be directly realized by the planarization of film layer in the deposition process of film layer, avoid the need for the step of carrying out flattening film layer using cmp planarization chemical industry skill, production cost is greatly reduced, while the wafer that avoids cmp planarization technical process and may cause cracks, and greatly improves production capacity.

Description

Pvd equipment

Technical field

The present invention relates to a kind of semiconductor manufacturing facilities, more particularly to a kind of Pvd equipment.

Background technique

In semiconductor fabrication, it is often necessary to heavy in crystal column surface or device surface using Pvd equipment Product film.For example, temperature compensating type SAW filter (TC-SAW) is developed to enhance SAW filter temperature stability Novel SAW filter, be widely used in the communications field.For the SAW device for realizing temperature compensating type, elder generation is needed Metal interdigital transducers are made on lithium niobate or lithium tantalate piezoelectricity wafer, certain thickness silica temperature is then plated again and mends Repay layer.Silicon oxide layer can effectively improve the rigidity of metal finger-cross structure, improve the mechanical-electric coupling of surface acoustic wave and piezoelectricity wafer, together When can be effectively reduced the drift that device frequency is varied with temperature and generated, so as to by the frequency-temperature coefficient of device (TCF) It is greatly reduced, for example, the TCF value of common SAW filter is about -45ppm/ DEG C, and the TCF of temperature compensating type SAW filter Value can be down to -20ppm/ DEG C or less.The device of this low TCF value is referred to as temperature compensating type SAW filter.

Film is prepared frequently with the method for physical vapour deposition (PVD) at present, such as above-mentioned silica temperature compensating layer.Because Metal interdigital structure has certain thickness, after the deposition of silicon oxide film 102 is completed on metal interdigital structure 101, surface Rough structure is generated, as shown in Figure 1, the electrical property that this rough structure will lead to device deteriorates.Both at home and abroad The processing method of mainstream is chemical-mechanical planarization (CMP) processing to be carried out to temperature-compensating layer surface, but chemical machinery is flat It is expensive to change (CMP) equipment, one of chemical-mechanical planarization (CMP) process, which is added, can increase considerably manufacturing cost, and be easy Cause piezoelectricity wafer that sliver occurs during chemical-mechanical planarization (CMP).

Meanwhile frequency in order to ensure temperature compensating type SAW filter (TC-SAW) and temperature-compensating performance, reliability, The consistency of stability and product has higher requirement to the thickness uniformity of silicon oxide layer, for example, being four cun for diameter Wafer, the thickness uniformity of silicon oxide layer requires to be standard deviation < 1%.

Summary of the invention

In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of Pvd equipment, Lead to increased costs and sliver risk for needing to carry out chemical mechanical planarization after solution in the prior art film deposition The problem of increase, is avoided with being directly realized by the planarization of film surface in the deposition process of film layer using cmp planarization chemical industry Skill reduces production cost and prevents sliver.

In order to achieve the above objects and other related objects, the present invention provides a kind of Pvd equipment, passes through exchange Or film is deposited to crystal column surface by pulsed dc magnetron sputtering；The Pvd equipment includes: cavity, permanent magnetism dress It sets, target, cavity adapter and wafer tray；The target is located at the top of the cavity；The wafer tray is located at the chamber The lower part of body, for carrying wafer, the wafer tray is connected with radio-frequency power supply to form back bias voltage；The cavity has epicoele Portion and lower cavity part, the cavity adapter are connected between the upper cavity part and lower cavity part, for increase the target with it is described The distance between wafer tray；The permanent magnetic device is located above the target, for generating primary magnetic field to realize that magnetic control splashes It penetrates.

Optionally, further include one or more electromagnetic coils, the electromagnetic coil be set on the cavity adapter or In the cavity wall of cavity described in person, for generating secondary magnetic.

Further, the electromagnetic coil adjusts the secondary magnetic by changing the size and Orientation of input current Intensity and direction, to optimize the plasma density near the target material surface.

Further, by adjusting intensity and the direction of the secondary magnetic, can be improved at the target rim etc. from Daughter density and sputter rate, to increase the thicknesses of layers for being deposited on the crystal round fringes.

Optionally, the electromagnetic coil is placed on the containment portion or inside.

It optionally, further include one or more magnet rings, for generating secondary magnetic.

Further, the magnet ring is mounted on the containment portion or inside, by moving up and down the magnet ring and use The magnet ring of opposed polarity adjusts intensity and the direction of secondary magnetic, so that the plasma optimized near the target material surface is close Degree.

It optionally, further include anode ring, the anode ring is located in the cavity wall of target rim.

It further, further include overhead gage, the first part of the overhead gage is connected to the anode ring and the cavity Cavity wall between adapter, second part are extended downwardly to block the cavity wall.

It optionally, further include lower baffle plate, the lower baffle plate is connected in cavity wall and extends towards the wafer tray, for hiding Keep off the side of the wafer tray.

Optionally, the distance between the target and the wafer tray by the wafer tray move up and down and The cavity adapter of different-thickness is adjusted, the adjustable range of the distance between the target and described wafer tray between 40mm ~ Between 90mm.

Further, the adjusting of the distance between the target and described wafer tray is between 80mm ~ 90mm.

Optionally, the junction of the cavity adapter and the upper cavity part and lower cavity part is respectively equipped with sealing ring.

Optionally, the material of the wafer tray includes one of stainless steel and aluminium alloy.

Optionally, the wafer tray surface is coated with oxide skin(coating) or nitride layer.

Further, the wafer tray surface is coated with one of chromium oxide, silicon oxide layer and aln layer.

Optionally, the back bias voltage formed in the wafer tray be used to increase the positive charge that is moved to wafer tray direction from The kinetic energy of son takes off the particle of the elevated regions from the film layer to bombard the elevated regions of the film layer of the crystal column surface From, and the sunk area in the film layer is refilled, realize the planarization of film layer.

Optionally, the frequency range that the radio-frequency power supply uses is between the MHz of 400 KHz ~ 27, the radio frequency function of load Rate range is between 100W ~ 450W.

Optionally, the diameter wafer is 75mm or more.

Optionally, the material of the wafer is selected from one of lithium niobate piezoelectric wafer and lithium tantalate piezoelectricity wafer.

Optionally, there is bulge-structure on the wafer.

Further, the bulge-structure includes metal interdigital structure.

Optionally, the film type of the Pvd equipment deposition includes silica.

As described above, Pvd equipment of the invention, has the advantages that

Pvd equipment of the invention can be directly realized by the planarization of film layer in the deposition process of silicon oxide film, It avoids tradition from needing the step of carrying out flattening film layer using cmp planarization chemical industry skill, production cost can be greatly reduced, keep away simultaneously The wafer cracking exempting from cmp planarization technical process and may cause, so as to greatly improve production capacity.The present invention is mended for temperature Type SAW filter (TC-SAW) manufacturing field is repaid, can be directly realized by finger-cross structure in the deposition process of silicon oxide film Production cost can be greatly reduced because that need not use cmp planarization chemical industry skill, simultaneously as avoiding in the planarization of silicon oxide layer Cmp planarization chemical industry skill and prevented wafer cracking, greatly improve production capacity, for temperature compensating type SAW filter (TC-SAW) manufacture Producer brings considerable economic benefit.

The present invention plates the oxide skin(coating) or nitride layer of the smooth densification of a thin layer on wafer tray surface, can substantially drop The probability of low sliver；Discovery can be by piezoelectricity in high bias technical process after adding the oxide skin(coating) or nitride layer after tested The fragment rate of wafer is down to 0.5% even lower from 2%, so as to be effectively reduced cost, improve production capacity, is brought for producer good Good economic benefit.

Detailed description of the invention

Fig. 1 is shown as the silica schematic diagram of Pvd equipment deposition in the prior art, the silicon oxide surface Present uneven structure.

Fig. 2 is shown as the structural schematic diagram of Pvd equipment of the invention.

Fig. 3 is shown as the oxygen that Pvd equipment of the invention deposits under the normal target-substrate distance process conditions of high bias The scanning electron microscope (SEM) photograph of SiClx.

Fig. 4 is shown as the oxidation that Pvd equipment of the invention deposits under the big target-substrate distance process conditions of high bias The scanning electron microscope (SEM) photograph of silicon.

Fig. 5 is shown as the silica uniform film thickness that Pvd equipment of the invention is deposited when target-substrate distance is 80mm The graph of relation of property and solenoid current size.

Component label instructions:

Cavity 201, lower cavity part 2011, upper cavity part 2012, target 202, anode ring 203, overhead gage 204, first part 2041, the Two parts 2042, lower baffle plate 205, electromagnetic coil 206, cavity adapter 207, wafer tray 208, wafer 209, permanent magnetic device 210, radio-frequency power supply 211.

Specific embodiment

Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from Various modifications or alterations are carried out under spirit of the invention.

Such as when describing the embodiments of the present invention, for purposes of illustration only, indicating that the sectional view of device architecture can disobey general proportion Make partial enlargement, and the schematic diagram is example, the scope of protection of the invention should not be limited herein.In addition, in reality It should include the three-dimensional space of length, width and depth in production.

For the convenience of description, herein may use such as " under ", " lower section ", " being lower than ", " following ", " top ", "upper" Deng spatial relationship word the relationships of an elements or features shown in the drawings and other elements or feature described.It will be understood that Arrive, these spatial relationship words be intended to encompass in use or device in operation, other than the direction described in attached drawing Other directions.In addition, when one layer be referred to as two layers " between " when, it can be only layer, Huo Zheye between described two layers There may be one or more intervenient layers.

In the context of this application, described fisrt feature second feature " on " structure may include One and second feature be formed as the embodiment directly contacted, also may include other feature be formed in the first and second features it Between embodiment, such first and second feature may not be direct contact.

It should be noted that the basic conception that only the invention is illustrated in a schematic way is illustrated provided in the present embodiment, Then only shown in diagram with it is of the invention in related component rather than component count, shape and size when according to actual implementation draw System, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its assembly layout kenel can also It can be increasingly complex.

The present invention provide it is a kind of physical vapour deposition (PVD) it is intracavitary with permanent magnetic device 210 by exchanging or pulsed dc magnetron splashes The method that silicon oxide film is deposited into crystal column surface is penetrated, by increasing a cavity adapter 207, target 202 is significantly increased To the distance of wafer tray 208, while cooperating the back bias voltage loaded in wafer tray 208 silica-filled to advanced optimize Flatness, and by adjustable electromagnetic coil 206 or permanent magnetic device 210, improve the Distribution of Magnetic Field on 202 surface of target, optimization oxidation The thickness uniformity of silicon thin film.

To achieve the above object, as shown in Fig. 2, the present embodiment provides a kind of Pvd equipment, the physics gas Phase depositing device mainly includes cavity 201, permanent magnetic device 210, target 202, anode ring 203, cavity adapter 207, electromagnetic wire Circle 206, wafer tray 208, overhead gage 204 and lower baffle plate 205.

As shown in Fig. 2, the target 202 is located at 201 top of cavity, for material needed for providing physical vapour deposition (PVD) Material source, the target are connected with AC power source or pulse dc power, and energetic ion bangs the material particles in the target 202 Out, it deposits to form required film layer on 209 surface of wafer.

As shown in Fig. 2, the wafer tray 208 is located at the lower part of the cavity 201, for carrying wafer 209, the crystalline substance Round tray 208 is connected with radio-frequency power supply 211 to form back bias voltage.The back bias voltage formed in the wafer tray 208 is for increasing The kinetic energy of the positive charge ion moved to 208 direction of wafer tray, to bombard the convex area of the film layer on 209 surface of wafer Domain is detached from the particle of the elevated regions from the film layer, and refills the sunk area in the film layer, realizes film The planarization of layer.For example, the frequency range that the radio-frequency power supply 211 uses is between the MHz of 400 KHz ~ 27, in this implementation The frequency that uses of radio-frequency power supply 211 can be selected as 13.56 MHz in example, the radio frequency power range of load between 100W ~ Between 450W.

The material of the wafer tray 208 includes one of stainless steel and aluminium alloy.General silica is sputtered Process cavity, generally under high bias process conditions, the especially piezoelectricity wafer of wafer 209, such as lithium niobate piezoelectric wafer and tantalic acid Lithium piezoelectricity wafer etc. is easy that sliver occurs because there are arcing events during physical gas-phase deposition, in order to improve Drawbacks described above, the present embodiment is coated with oxide skin(coating) or nitride layer on 208 surface of wafer tray, for example, the oxide Layer or nitride layer can be silicon oxide layer, chromium oxide layer, and perhaps aln layer etc. plates the oxide skin(coating) or nitride layer The fragment rate of piezoelectricity wafer in technical process can be greatly reduced.After the oxide skin(coating) or nitride layer are added in discovery after tested The fragment rate of piezoelectricity wafer in high bias technical process can be down to from 2% it is 0.5% even lower, so as to be effectively reduced Cost improves production capacity, brings good economic benefit for producer.

In order to improve the flatness of film deposition, as shown in Fig. 2, the cavity 201 has upper cavity part 2012 and lower cavity part 2011, the cavity adapter 207 is connected between the upper cavity part 2012 and lower cavity part 2011, for increasing the target The distance between 202 and the wafer tray 208.Cavity adapter 207 be used to increase target 202 to wafer tray 208 away from From (target-substrate distance), target-substrate distance becomes larger after cavity adapter 207 is added, simultaneously as the position of the wafer tray 208 is with respect to target Material 202 can move up and down, so the adjustable range of target-substrate distance becomes larger, between the target 202 and the wafer tray 208 Distance by the wafer tray 208 move up and down and the cavity adapter 207 of different-thickness adjust, the target 202 and the distance between the wafer tray 208 adjustable range between 40mm ~ 90mm.Specifically, target-substrate distance is bigger, The vertical or near vertical directionality moved downward of particle that positive charged particles and 202 surface of target sputter is better, more Be conducive to improve the flatness of film layer (such as silica) filling between crystal column surface bulge-structure (such as metal interdigital structure).According to This, in the present embodiment, the best adjusting of the distance between the target 202 and described wafer tray 208 between 80mm ~ 90mm it Between.

The cavity adapter 207 and the upper cavity part 2012 and lower cavity part 2011 by screw and can be correspondingly arranged Screw hole is fixed, and convenient for the disassembly of the cavity adapter 207 and the upper cavity part 2012 and lower cavity part 2011, convenient for according to According to the cavity adapter 207 of actual demand replacement different-thickness, to improve the adjustable and scope of application of equipment.In order to further change It is apt to the leakproofness of the cavity adapter 207 and the upper cavity part 2012 and lower cavity part 2011, the cavity adapter 207 and institute The junction for stating upper cavity part 2012 and lower cavity part 2011 is respectively equipped with sealing ring, and the sealing ring can be rubber etc..

As shown in Fig. 2, the electromagnetic coil 206 can be set in 201 outside of cavity or inside, as an example, The electromagnetic coil 206 is set on the cavity adapter 207 or in the cavity wall of the cavity 201, the electromagnetic coil 206 can be one or more, optimize the plasma density of 202 edge of target for generating secondary magnetic.By It is partially thin often to will cause 209 edge film layer of wafer after target-substrate distance increases, 209 interphase of wafer is to partially thick, film thickness uniformity It is deteriorated, specifically, electromagnetic coil 206 is fixed on cavity adapter 207, with target 202 in sustained height or position on the lower side, is produced Raw secondary magnetic, the intensity for the secondary magnetic that the adjustable coil of input current by changing electromagnetic coil 206 generates and side To, optimize 202 surface of target near Distribution of Magnetic Field, so as to effectively improve 202 edge plasma density of target And sputter rate, increase the thicknesses of layers for being deposited on 209 edge of wafer, optimizes the uniformity of depositional coating.

In another embodiment, one or more of electromagnetic coils 206 can also be replaced using one or more magnet rings, For generating secondary magnetic, the magnet ring may be mounted at the containment portion or inside, by move up and down the magnet ring and Intensity and the direction that secondary magnetic is adjusted using the magnet ring of opposed polarity, to optimize the plasma near the target material surface Density.

As shown in Fig. 2, the permanent magnetic device 210 is located at 202 top of target, for generating primary magnetic field to realize just Normal magnetron sputtering.

As shown in Fig. 2, the anode ring 203 is located in the cavity wall at 202 edge of target.The overhead gage 204 includes first Part 2041 and second part 2042, first part 2041 are connected between the anode ring 203 and the cavity adapter 207 Cavity wall on, second part 2042 is extended downwardly to block the cavity wall.Specifically, anode ring 203 is located at 202 edge side of target Face is between cavity wall and overhead gage 204, and for preventing during sputtering technology intracavitary anode surface by deielectric-coating, (such as silica is exhausted Edge layer) it is completely covered, guarantee anode normal ground, prevents the problem of anode disappears.Meanwhile second of the overhead gage 204 Points 2042 can block cavity adapter 207 and electromagnetic coil 206 in cavity wall and cavity wall, avoid sputtering particle in cavity wall Deposition, film layer is increasingly thicker to eventually flake off the problem for causing 201 endoparticle of cavity excessive.

As shown in Fig. 2, the lower baffle plate 205 is connected in cavity wall and extends towards the wafer tray 208, for blocking The side for stating wafer tray 208 prevents sputtering particle from depositing on its surface, the problem for causing 201 endoparticle of cavity excessive.

209 diameter of wafer placed in the wafer tray 208 can be selected as 75mm or more.The material of the wafer 209 Material is preferably piezoelectricity wafer, for example, the piezoelectricity wafer can be in lithium niobate piezoelectric wafer and lithium tantalate piezoelectricity wafer One kind.There is bulge-structure, for example, the bulge-structure includes metal interdigital structure, the metallic tines on the wafer 209 The material for referring to structure is preferably aluminium or titanium.

The Pvd equipment of the present embodiment can deposit the film layer of different materials according to actual demand, especially described When the film type of Pvd equipment deposition is silica, film thickness uniformity can obtain great improvement.

In a specific implementation process, deposited on wafer 209 using the Pvd equipment of the present embodiment Silicon oxide film, wherein it is 75 millimeters that 209 diameter of wafer, which is selected, and 209 material selection of wafer is lithium niobate or lithium tantalate piezo crystals Piece has patterned metal interdigital structure, height 170nm, width 450nm on wafer 209.

When target-substrate distance is identical with the target-substrate distance (usually 35-50 mm) of standard physical depositing operation chamber, only in wafer support Radio frequency (RF) back bias voltage is loaded on disk 208, silicon oxide film under the conditions of RF power is 150-200W can be obtained such as Fig. 3 Shown under the conditions of the high normal target-substrate distance of bias silicon oxide surface SEM picture, it can be seen that silicon oxide surface flatness is with general The result of logical sputtering technology, which is compared, certain improvement, but still there is bigger fluctuating on surface.

When the target-substrate distance of physical gas-phase deposition chamber is increased to 80mm, equally loaded in wafer tray 208 RF bias, the silicon oxide film under the conditions of RF power is 150-200W, can obtain the big target-substrate distance item of high bias shown in Fig. 4 The SEM picture of silicon oxide surface under part, it can be seen that the surface smoothness for the silica that Fig. 4 is shown is compared with Fig. 3 to be had very Big improvement.The silicon oxide deposition equipment of the high big target-substrate distance of bias of the present invention, can be with by the dependence test of SAW filter In the case where not doing cmp planarizationization processing, silicon oxide layer is still able to satisfy the need of temperature compensating type SAW filter (TC-SAW) It asks, the TCF value of device can be down to -10ppm/ DEG C.

It is partially thin that target-substrate distance often will cause the silica edge deposited on wafer after increasing, wafer interphase to partially thick, Film thickness uniformity is deteriorated.Target-substrate distance is bigger, and crystal round fringes are relatively intermediate thinner, and the present embodiment is enhanced using electromagnetic coil 206 The magnetic field strength at 202 edge of target optimizes the uniformity of silica film thickness to improve the sputter rate of crystal round fringes.Fig. 5 is aobvious It is shown as under conditions of target-substrate distance is 80mm, the relation curve of 206 size of current of silica film thickness uniformity and electromagnetic coil；By Figure, can be the standard of the thickness uniformity of silica by using electromagnetic coil 206 as it can be seen that be four cun of wafer for diameter Deviation is down to 0.81% from 4.16%.

As described above, Pvd equipment of the invention, has the advantages that

The present invention plates the oxide skin(coating) or nitride layer of the smooth densification of a thin layer on 208 surface of wafer tray, can be big The probability of width reduction sliver；Add after the oxide skin(coating) or nitride layer can will be in high bias technical process for discovery after tested The fragment rate of piezoelectricity wafer is down to 0.5% even lower from 2%, is producer's band so as to be effectively reduced cost, improve production capacity Carry out good economic benefit.

So the present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization value.

The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as At all equivalent modifications or change, should be covered by the claims of the present invention.

Claims

1. a kind of Pvd equipment, which is characterized in that deposited to film by exchange or pulsed dc magnetron sputtering Crystal column surface；The Pvd equipment includes: cavity, permanent magnetic device, target, cavity adapter and wafer tray；Institute Target is stated to be located at the top of the cavity；The wafer tray is located at the lower part of the cavity, for carrying wafer, the wafer support Disk is connected with radio-frequency power supply to form back bias voltage；The cavity has upper cavity part and lower cavity part, and the cavity adapter is connected to Between the upper cavity part and lower cavity part, for increasing the distance between the target and the wafer tray；The permanent magnetic device Above the target, for generating primary magnetic field to realize magnetron sputtering.

2. Pvd equipment according to claim 1, it is characterised in that: further include one or more electromagnetic wires Circle, the electromagnetic coil are set on the cavity adapter or in the cavity wall of the cavity, for generating secondary magnetic.

3. Pvd equipment according to claim 2, it is characterised in that: the electromagnetic coil is by changing input The size and Orientation of electric current adjusts intensity and the direction of the secondary magnetic, thus optimize near the target material surface it is equal from Daughter density.

4. Pvd equipment according to claim 3, it is characterised in that: by adjusting the strong of the secondary magnetic Degree and direction, can be improved plasma density and sputter rate at the target rim, be deposited on the wafer to increase The thicknesses of layers at edge.

5. Pvd equipment according to claim 2, it is characterised in that: the electromagnetic coil is placed on the chamber It is outside body or internal.

6. Pvd equipment according to claim 1, it is characterised in that: further include one or more magnet rings, use In generation secondary magnetic.

7. Pvd equipment according to claim 6, it is characterised in that: the magnet ring is mounted on outside the cavity Portion or inside, by moving up and down the magnet ring and adjusting intensity and the direction of secondary magnetic using the magnet ring of opposed polarity, from And optimize the plasma density near the target material surface.

8. Pvd equipment according to claim 1, it is characterised in that: it further include anode ring, the anode ring In the cavity wall of target rim.

9. Pvd equipment according to claim 8, it is characterised in that: it further include overhead gage, the overhead gage First part be connected to the cavity wall between the anode ring and the cavity adapter, second part is extended downwardly to block State cavity wall.

10. Pvd equipment according to claim 1, it is characterised in that: it further include lower baffle plate, the lower baffle plate It is connected in cavity wall and extends towards the wafer tray, for blocking the side of the wafer tray.

11. Pvd equipment according to claim 1, it is characterised in that: the target and the wafer tray The distance between by the wafer tray move up and down and the cavity adapter of different-thickness is adjusted, the target and institute The adjustable range of the distance between wafer tray is stated between 40mm ~ 90mm.

12. Pvd equipment according to claim 11, it is characterised in that: the target and the wafer tray The distance between be adjusted between 80mm ~ 90mm.

13. Pvd equipment according to claim 1, it is characterised in that: the cavity adapter and it is described on Cavity portion and the junction of lower cavity part are respectively equipped with sealing ring.

14. Pvd equipment according to claim 1, it is characterised in that: the material of the wafer tray includes One of stainless steel and aluminium alloy.

15. Pvd equipment according to claim 1, it is characterised in that: the wafer tray surface plating is aerobic Compound layer or nitride layer.

16. Pvd equipment according to claim 15, it is characterised in that: the wafer tray surface plating is aerobic Change one of chromium, silicon oxide layer and aln layer.

17. Pvd equipment according to claim 1, it is characterised in that: what is formed in the wafer tray is negative Bias is used to increase the kinetic energy of the positive charge ion moved to wafer tray direction, with bombard the crystal column surface film layer it is convex Region is played, is detached from the particle of the elevated regions from the film layer, and refill the sunk area in the film layer, is realized The planarization of film layer.

18. Pvd equipment according to claim 1, it is characterised in that: the frequency that the radio-frequency power supply uses For range between the MHz of 400 KHz ~ 27, the radio frequency power range of load is between 100W ~ 450W.

19. Pvd equipment according to claim 1, it is characterised in that: the diameter wafer is 75mm or more.

20. Pvd equipment according to claim 1, it is characterised in that: the material of the wafer is selected from niobium One of sour lithium piezoelectricity wafer and lithium tantalate piezoelectricity wafer.

21. Pvd equipment according to claim 1, it is characterised in that: have bulge-structure on the wafer.

22. Pvd equipment according to claim 21, it is characterised in that: the bulge-structure includes metallic tines Refer to structure.

23. according to claim 1 to Pvd equipment described in 22 any one, it is characterised in that: the physics gas The film type of phase depositing device deposition includes silica.