CN116752112B - Radio frequency magnetron sputtering equipment - Google Patents
Radio frequency magnetron sputtering equipment Download PDFInfo
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- CN116752112B CN116752112B CN202311034895.6A CN202311034895A CN116752112B CN 116752112 B CN116752112 B CN 116752112B CN 202311034895 A CN202311034895 A CN 202311034895A CN 116752112 B CN116752112 B CN 116752112B
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- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The application provides a radio frequency magnetron sputtering device, which comprises: the sputtering device comprises a cavity, a sputtering assembly, a base, a supporting shaft, a baffle plate and an anode compression ring; the sputtering component is positioned at the top of the cavity; the base is positioned in the cavity and used for bearing the substrate; one end of the supporting shaft is connected with the bottom of the base, and the other end of the supporting shaft extends downwards to the outside of the cavity; the baffle plate and the anode press ring are positioned in the cavity, and the baffle plate extends downwards from the periphery of the sputtering assembly to the periphery of the base; the anode press ring extends to the upper side of the edge of the substrate, and a plurality of grooves with upward openings are uniformly arranged on the anode press ring at intervals. According to the application, the plurality of grooves are formed in the anode press ring, so that the surface area of the anode press ring is greatly increased in a limited space, the service life of the anode press ring is prolonged, the radio frequency sputtering rate and the stability are improved, and the equipment yield is improved.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to semiconductor equipment, and in particular relates to radio frequency magnetron sputtering equipment.
Background
Magnetron sputtering technology has evolved rapidly since the advent of the 70 th century 20. Compared with the prior deposition technology, the method has the very remarkable characteristics that: 1) The sputtering rate is greatly improved; 2) The sputtering voltage is reduced; 3) The sputtering gas pressure is reduced. Based on these characteristics, magnetron sputtering deposition has become a thin film deposition method widely used at present. Compared with other sputtering methods, the magnetron sputtering is characterized in that a closed magnetic field is added on the surface of the target material, electrons are subjected to the action of the magnetic field and the electric field to do spiral motion, the service life of the electrons is prolonged, the ionization yield is increased, the ionization degree of a discharge area is increased, namely the density of ions is increased, so that the resistance of the discharge area is reduced, and the voltage is reduced along with the reduction. Because the discharge area is concentrated near the magnetic field, namely the target surface, the ion concentration incident on the target surface is improved, and the sputtering yield is greatly improved.
The magnetron sputtering is classified into direct current magnetron sputtering and radio frequency magnetron sputtering depending on the kind of power source used. The direct current magnetron sputtering is used for conductive targets, and the radio frequency magnetron sputtering can be used for conductive targets and nonconductive targets. Compared with direct current magnetron sputtering, the radio frequency magnetron sputtering has the greatest advantage of no target poisoning phenomenon. However, in the rf magnetron sputtering apparatus, the anode is located at the periphery of the target, and the surface of the anode is easily covered by a coating film, which results in anode failure. Once the anode fails, argon cannot be effectively ionized to form argon ions which bombard the target, so that the plasma becomes extremely unstable, and finally the deposited film is poor in uniformity, the deposition rate is reduced, and even the deposition is stopped. To avoid anode disappearance, the common method in the prior art is to increase the frequency of anode cleaning and replacement, but this brings a series of new problems such as reduced equipment yield and increased production cost.
It should be noted that the foregoing description of the background art is only for the purpose of providing a clear and complete description of the technical solution of the present application and is presented for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background of the application section.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present application is to provide a radio frequency magnetron sputtering apparatus, which is used for solving the problems that in the radio frequency magnetron sputtering apparatus in the prior art, the anode is disabled due to surface coating, and the yield of the apparatus is reduced and the production cost is increased by increasing the frequency of cleaning and replacing the anode.
To achieve the above and other related objects, the present application provides a radio frequency magnetron sputtering apparatus comprising: the sputtering device comprises a cavity, a sputtering assembly, a base, a supporting shaft, a baffle plate and an anode compression ring; the sputtering component is positioned at the top of the cavity; the base is positioned in the cavity and used for bearing the substrate; one end of the supporting shaft is connected with the bottom of the base, and the other end of the supporting shaft extends downwards to the outside of the cavity; the baffle plate and the anode press ring are positioned in the cavity, and the baffle plate extends downwards from the periphery of the sputtering assembly to the periphery of the base; the anode press ring extends to the upper side of the edge of the substrate, and a plurality of grooves with upward openings are uniformly arranged on the anode press ring at intervals.
Optionally, the groove is an annular groove arranged along the circumferential direction of the anode pressure ring, and/or the groove is a circular groove.
Optionally, the depth of the groove is 10mm-100mm.
Optionally, the anode pressing ring is pressed on the edge of the substrate or on the base through the supporting structure.
Optionally, the vertical distance between the bottom surface of the anode pressing ring and the substrate is 0.2mm-0.3mm.
Optionally, the material of the anode pressure ring includes one or more of stainless steel, aluminum alloy and titanium alloy.
Optionally, the surface of the anode press ring is roughened.
Optionally, the baffle includes upper baffle and lower baffle, the one end of upper baffle is connected with the adaptation piece that sets up on the cavity, and the other end extends to sputtering component periphery, lower baffle one end with the adaptation piece is connected, and the other end extends to the base periphery downwards, positive pole clamping ring one end is fixed in on the lower baffle.
Optionally, the thickness of the anode pressing ring gradually decreases from the periphery to the center.
Optionally, the inner surface of the groove has a stepped structure.
Optionally, the radio frequency magnetron sputtering device further comprises an annular auxiliary anode positioned in the cavity, wherein the auxiliary anode is annularly arranged on the circumference of the supporting shaft and is in direct contact with the bottom surface of the cavity.
As described above, the radio frequency magnetron sputtering apparatus of the present application has the following advantageous effects: according to the application, the plurality of grooves are formed in the anode press ring, so that the surface area of the anode press ring is greatly increased in a limited space, the service life of the anode press ring is prolonged, the sputtering rate and the stability are improved, and the equipment yield is improved.
Drawings
Fig. 1 is a schematic cross-sectional view of a rf magnetron sputtering apparatus according to a first embodiment of the application.
Fig. 2 is a schematic top view of an anode pressure ring of a rf magnetron sputtering apparatus according to the first embodiment.
Fig. 3 is a schematic cross-sectional view of fig. 2 along line AA'.
Fig. 4 shows another exemplary cross-sectional structure along line AA' of fig. 2.
Fig. 5 is a schematic top view of an anode pressure ring of a rf magnetron sputtering apparatus according to the first embodiment.
Fig. 6 is a schematic view showing an exemplary cross-sectional structure along line AA' of fig. 5.
Fig. 7 is a schematic view of another exemplary cross-sectional structure along line AA' of fig. 5.
Fig. 8 is a schematic cross-sectional view of a rf magnetron sputtering apparatus according to a second embodiment of the application.
Detailed Description
Other advantages and effects of the present application will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present application with reference to specific examples. The application may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present application. As described in detail in the embodiments of the present application, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present application. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Furthermore, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present.
In the context of the present application, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present application by way of illustration, and only the components related to the present application are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex. In order to make the illustration as concise as possible, not all structures are labeled in the drawings.
Example 1
As shown in fig. 1 to 7, the present application provides a radio frequency magnetron sputtering apparatus comprising: the sputtering device comprises a cavity 11, a sputtering assembly, a base 14, a supporting shaft 16, a baffle plate and an anode press ring 19.
The cavity 11 is typically made of an alloy material, such as stainless steel. The inner surface of the cavity 11 may be further coated to prevent corrosion. The chamber 11 is provided with an air inlet 111 and an air outlet 112. For example, the air inlet 111 and the air outlet 112 are disposed at a lower portion of the chamber 11, such as on a sidewall of the chamber 11 below the susceptor 14. The reactive gas and the inert gas may be fed into the chamber 11 through the same gas inlet 111 or fed into the chamber 11 through different gas inlet channels. For example, the reaction gas may enter the chamber 11 through the gas inlet 111 at the lower portion of the chamber 11, and the inert gas may be supplied into the chamber 11 through the gas supply line at the upper portion of the chamber 11, without limitation. During film deposition, the chamber 11 may be grounded.
The sputtering assembly is located on top of the chamber 11 and includes a magnet 12 and a target 13. The magnet 12 may be an electromagnet or a permanent magnet. The target 13 may be fixed under the magnet 12 by a target plate. The target 13 is connected to a radio frequency power source, for example, at a frequency of 13.56MHZ. In some examples, cooling means may also be provided adjacent the magnetron assembly to cool the magnetron assembly, in particular the target 13.
The sputtering component can be a balanced magnetron sputtering component, namely, a permanent magnet or an electromagnetic coil with the core equal to or similar to the outer ring magnetic field strength is placed behind the cathode target, and a magnetic field perpendicular to the electric field direction is formed on the surface of the target. Argon molecules introduced into the cavity are ionized into Ar+ ions and electrons, glow discharge is generated, the target is bombarded by electric field acceleration, and target atoms, ions, secondary electrons and the like are sputtered. Electrons move in a cycloid mode under the action of mutually perpendicular electromagnetic fields and are bound on the surface of a target, so that the movement track of the electrons in plasma is prolonged, the processes of gas molecule collision and ionization are increased, more ions are ionized, and the ionization rate of gas is improved.
In further examples, the sputtering assembly may also be an unbalanced magnetron sputtering assembly. That is, the magnetic field intensity of the outer ring of the magnet can be higher than the magnetic field intensity of the center, so that magnetic lines of force do not completely form a closed loop, and part of the magnetic lines of force of the outer ring extend to the surface of the substrate 15, so that part of secondary electrons can escape from the surface area of the target along the magnetic lines of force, and collide with neutral particles for ionization, thereby being beneficial to further increasing the ion concentration of a sputtering area and improving the deposition rate and uniformity.
In some examples, a drive (not shown) coupled to the sputtering assembly may be provided to drive the target 13 and/or magnet 12 to rotate in the same horizontal plane when desired, which helps to improve target 13 utilization and deposition uniformity. Or in other examples, the drive means may drive the magnet 12 to rotate along a horizontal plane to change the angle of the magnet 12 relative to the horizontal plane, which may adjust the distribution of magnetic lines of force to meet different deposition needs. In other examples, the magnet includes a plurality of small magnets whose positions are adjustable to adjust the distribution of the magnets as needed to change the distribution of magnetic lines of force to meet different deposition requirements.
The susceptor 14 is disposed in the chamber 11 and is configured to carry a substrate 15. The substrate 15 is, for example, a circular wafer, but not limited to this, and may be, for example, a rectangular solar cell or a glass substrate 15. When the substrate 15 is a circular wafer, the anode press ring 19 is correspondingly circular. The substrate 15 may be directly placed on the surface of the susceptor 14 or fixed to the surface of the susceptor 14 by vacuum suction. A heating and/or cooling unit may be provided within the susceptor 14 to heat or cool the substrate 15 as desired. One end of the supporting shaft 16 is connected with the bottom of the base 14, and the other end extends downwards to the outside of the cavity 11. The support shaft 16 may be connected to a driving mechanism to drive the susceptor 14 to lift and/or rotate as needed, thereby driving the substrate 15 to lift and/or rotate.
The baffle plate and anode pressure ring 19 are located within the chamber 11, with the baffle plate extending downwardly from the periphery of the sputtering assembly to the periphery of the susceptor 14. I.e., the baffle plate covers the inner wall of the chamber 11 between the sputtering assembly and the periphery of the susceptor 14 to prevent sputtered particles from depositing on the inner wall of the chamber 11. The shield may be grounded directly or by direct contact with the cavity 11. Anode press ring 19 extends above the edge of substrate 15. That is, the anode press ring 19 is slightly overlapped with the substrate 15 in the longitudinal direction, and the edge region shielded by the anode press ring 19 is a non-device region of the substrate 15, and the radial dimension of the region is usually within 2 mm. A plurality of (2 or more) grooves 191 with upward openings are uniformly arranged on the anode press ring 19 at intervals. The anode press ring 19 may be grounded by direct contact with the shield.
By providing the anode press ring 19 with a plurality of grooves 191, the surface area of the anode press ring 19 is greatly increased in a limited space, and the service life thereof can be greatly prolonged, thereby contributing to the improvement of the sputtering rate and stability.
The principle is that in the rf magnetron sputtering plasma system, since the power supply is in an ac mode, the argon ions bombard the target 13 and bombard the substrate in a small amount, but there is a relationship: assuming that the target (cathode) is a and the substrate (anode) is b, the ratio of the cathode voltage Va to the anode voltage Vb is equal to the ratio of the anode area Sb to the cathode area Sa to the power of 4, namely: va/vb= (Sb/Sa)/(4). Therefore, if the anode area is increased, so that Sb > Sa and correspondingly Va > Vb, during the radio frequency glow discharge, plasma has very little bombardment on the anode (substrate), so that the back sputtering effect on the substrate is greatly reduced, the sputtering rate is improved, and meanwhile, the stability of sputtering is also improved due to the reduction of the back sputtering effect.
It should be noted that, the anode press ring 19 in this embodiment is similar to the conventional ceramic or quartz wafer press ring in location, but its function is greatly different. While the conventional ceramic or quartz wafer pressing ring is only used for fixing the substrate 15, the anode pressing ring 19 in this embodiment is used for fixing the substrate 15 and shielding the edge of the substrate 15, and is more important for preventing the back sputtering of the substrate 15.
The structure of the groove 191 may be as desired. For example, as shown in fig. 2, the grooves 191 are circular grooves, and the circular grooves are uniformly spaced along the circumference of the anode press ring 19, and the circular grooves 191 may be disposed around the same circumference of the anode press ring 19 or around a plurality of circumferences of the anode press ring 19. Alternatively, one or more rings of annular grooves 191 may be provided on the anode pressure ring 19. The number of circular grooves per turn is preferably not less than 4. The thickness of the anode press ring 19 may be the same throughout. With this structure, the cross-sectional structure of the groove 191 is as shown in fig. 3, and the side walls on both sides of the groove 191 are the same in height. In a preferred embodiment, however, the thickness of the anode press ring 19 is gradually reduced from the periphery toward the center (i.e., directly above the center of the base plate 15), so that a slope with a reduced height is formed inside the anode press ring 19. With this structure, the cross-sectional structure of the groove 191 is as shown in fig. 4, and the height of the outside of the groove 191 is greater than that of the inside. The anode press ring 19 is arranged to be of a structure with the thickness reduced from outside to inside, so that the anode press ring 19 forms a slope surface, shielding of the anode press ring 19 to the target 13 particles can be reduced, and the deposition efficiency can be improved. Because the target 13 particles do not reach all the way down to the surface of the substrate 15 in the vertical direction, but the target 13 particles move in all directions. The anode press ring 19 is provided with a certain slope surface, so that the local part of the anode press ring 19, especially the vertical distance between the center of the anode press ring 19 and the target 13 is increased, the blocking capability on the target 13 particles is weakened, and more target 13 particles have a chance to reach the surface of the substrate 15.
In another example, as shown in fig. 5, the groove 191 is an annular groove disposed along the circumference of the anode pressing ring 19, and the plurality of annular grooves are concentric rings. The number of the annular grooves is preferably 3 or more. If the thickness of the anode press ring 19 is similar throughout, the cross-sectional structure of the anode press ring 19 is shown in fig. 6; if the thickness of the anode press ring 19 is gradually reduced from the outside to the inside, the cross-sectional structure thereof is as shown in fig. 7.
In one example, the groove 191 may be a blind groove, i.e., the groove 191 is open at one end and closed at one end. The various grooves 191 may be in communication with one another via transverse through holes to further increase the surface area of the anode pressure ring 19.
In another example, the groove 191 may be a through groove penetrating up and down. When the grooves 191 are annular through grooves, the grooves 191 can be connected by a connecting structure arranged along the radial direction of the anode pressing ring 19.
The cross section of the groove 191 may be a type structure with an upward opening, a U-shaped groove, or a trapezoid structure with a narrow top and a wide bottom, or a trapezoid structure with a wide top and a narrow bottom, or other irregular shapes, which is not strictly limited. The surface of the groove 191 may be a rounded surface, but in a preferred example, the inner surface of the groove 191 has a stepped structure, for example, the cross section of the groove 191 has a trapezoid structure with a wide upper part and a narrow lower part, and the inclined surface of the groove 191 is formed with a plurality of stepped structures or saw tooth structures. Such a design helps to further increase the surface area of the anode press ring 19, prevents the anode press ring 19 from losing its surface completely covered by the target 13 particles, and helps to extend the service life of the anode press ring 19.
The anode press ring 19 may be of a nearly planar configuration on the lower surface, and thus includes only a plurality of upwardly open grooves 191. In a further example, the anode pressure ring 19 may also be provided as a number of grooves 191 open downwards, so that the cross section of the anode as a whole assumes a wave-like structure.
The anode press ring can be single or more than two. For example, when the number of anode press rings is 2, the 2 anode press rings may be disposed opposite to each other, i.e., the opening of the groove of the other anode press ring faces downward. The ends of the two anode press rings can be connected with each other, so that the overall surface area of the anode is further increased.
The configuration and dimensions of the plurality of grooves 191 on the same anode pressure ring 19 may be different, but are preferably the same. The number of the grooves 191 is not limited, but theoretically, the larger the number of the grooves 191, the better. Although the specific dimensions of each groove 191 may be adjusted according to the equipment configuration, the inventors have found through a lot of experiments that the depth of the grooves 191 is preferably 10mm to 100mm (if all the grooves 191 are not exactly the same in depth and/or the grooves 191 are irregular grooves, the depth refers to the maximum depth of the grooves 191).
The anode press ring 19 may be pressed against the edge of the substrate 15 or against the base 14 by a support structure (not shown), i.e. the anode press ring 19 may be in direct contact with or non-contact with the substrate 15. When the anode press ring 19 is in direct contact with the substrate 15, a plurality of flow guide grooves may be disposed on the lower surface of the anode press ring 19, so that the residual gas in the cavity 11 may flow to the exhaust port 112 through the flow guide grooves. When the anode press ring 19 is not in direct contact with the substrate 15, the vertical distance between the bottom surface of the anode press ring 19 and the substrate 15 is preferably 0.2mm-0.3mm, and the distance can be used as a residual gas discharge channel, and the distance can avoid the disturbance of the substrate 15 caused by the oversized discharge channel.
The support structure at the bottom of the anode press ring 19 may be fixedly connected or detachably connected to the anode press ring 19. That is, in one example, the support structure may be part of the anode press ring 19. In another example, the lower surface of the anode press ring 19 may be provided with a plurality of insertion holes, and the support structure is a plurality of pins, and the pins are inserted into the insertion holes of the anode press ring 19, thereby pressing the anode press ring 19 onto the base 14 or the substrate 15. In a further example, a plurality of insertion holes may be formed in the same radial direction of the anode press ring 19, so that pins may be inserted into different insertion holes according to different needs, and thus, adjustment of the shielding area of the anode press ring 19 to the substrate 15 may be adjusted.
The other end of the anode collar 19, which does not extend above the edge of the substrate 15, may be secured to the chamber 11, but is preferably secured to a baffle.
The baffle may be of unitary construction. For example, the baffle is of an annular cylindrical structure, and is annularly arranged on the inner side of the cavity 11. In a preferred example, the baffle plate includes an upper baffle plate 17 and a lower baffle plate 18, wherein one end of the upper baffle plate 17 is connected with an adapting block 20 arranged on the cavity 11 and located at the periphery of the sputtering assembly, and the other end of the upper baffle plate 17 extends to the periphery of the sputtering assembly; one end of the lower baffle 18 is connected with the adapting block 20 (the connection positions of the upper baffle 17 and the lower baffle 18 and the adapting block 20 are not the same), the other end extends downwards to the periphery of the base 14, and one end of the anode pressing ring 19 is fixed on the lower baffle 18. The baffle is arranged to be of a split structure, so that the baffle is more convenient to assemble and disassemble, and meanwhile, the size of the baffle can be flexibly adjusted according to the needs.
The material of the baffle plate may be the same as that of the cavity 11, for example, stainless steel, and the surface may be plated with an anode.
The anode pressing ring 19 may be formed by plating an anode conductive film on the surface of a non-conductive material. In the preferred embodiment, however, anode pressure ring 19 is entirely of an electrically conductive material, such as one or more of the metallic materials including, but not limited to, stainless steel, aluminum alloys, and titanium alloys. The overall metal material is not only beneficial to the processing and forming of the anode press ring 19, but also beneficial to prolonging the service life of the anode press ring 19. In a preferred example, the anode press ring 19 is a composite structure of a stainless steel body surface plated with an aluminum alloy film. The surface of the anode press ring 19 is roughened, for example, the surface is sandblasted, and aluminum is fused according to a desired process if necessary.
In some examples, the anode press ring surface may be provided with an inert gas passage, for example, to communicate the grooves of the anode press ring with an inert gas source to supply inert gas to the anode press ring surface when desired. For example, inert gas is supplied into the groove from the lower part of the groove, so that the groove is filled with the inert gas, deposition of target particles on the surface of the anode press ring is reduced, and the service life of the anode press ring is further prolonged.
The radio frequency magnetron sputtering device provided in the embodiment can be used for preparing various types of films such as insulating films of metals, alloys, semiconductors, oxides, nitrides and the like. The inventor has proved by a large number of experiments that, compared with the existing equipment, under the same conditions, the radio frequency magnetron sputtering equipment provided by the embodiment greatly prolongs the service life of the anode press ring 19, obviously reduces the maintenance frequency, and improves the equipment yield by more than 15%.
Example two
As shown in fig. 8, the present embodiment provides a radio frequency magnetron sputtering apparatus of another structure. The main difference between the rf magnetron sputtering apparatus provided in this embodiment and the first embodiment is that, in addition to the structure described in the first embodiment, the rf magnetron sputtering apparatus provided in this embodiment further includes an annular auxiliary anode 21 located in the cavity 11, where the auxiliary anode 21 is circumferentially disposed on the support shaft 16 and is in direct contact with the bottom surface of the cavity 11. The auxiliary anode 21 is preferably also made of a conductive metal material such as stainless steel, aluminum alloy, and titanium alloy. The ring width of the auxiliary anode is preferably 2cm or more, but preferably 10cm or less. The annular auxiliary anode 21 is grounded by being in direct contact with the bottom surface of the chamber 11.
More specifically, the auxiliary anode 21 is connected to the support shaft 16 via a bellows, and the lifting shaft of the cylinder is disposed in the bellows and extends to be connected to the support shaft 16, so that the lifting of the support shaft 16 is not affected while the sealing performance of the chamber 11 is ensured. And the connection surface between the support shaft 16 and the cavity 11 may be further sealed (not labeled) to further improve the tightness of the cavity 11.
By arranging the auxiliary anode 21, the problem that the radio frequency plasma needs a loop can be effectively solved, and meanwhile, the problems of arcing and anode disappearance caused by anode charge accumulation are solved due to the grounding of the anode. Meanwhile, the auxiliary anode 21 is in a circular ring shape and is in surface-to-surface contact with the cavity 11, so that the problems of nonuniform plasmas and the like caused by different local impedance due to local grounding of the anode are solved.
Therefore, by matching the anode press ring with the auxiliary anode, the distribution uniformity of the plasma and the service life of the anode can be further improved, and the deposition uniformity and the equipment yield can be further improved.
Except for the provision of the auxiliary anode, other structures of the rf magnetron sputtering apparatus of the present embodiment are the same as those of the first embodiment, and specific reference is made to the description of the first embodiment, so that the description is omitted for brevity.
In summary, the radio frequency magnetron sputtering apparatus provided by the present application includes: the sputtering device comprises a cavity, a sputtering assembly, a base, a supporting shaft, a baffle plate and an anode compression ring; the sputtering component is positioned at the top of the cavity; the base is positioned in the cavity and used for bearing the substrate; one end of the supporting shaft is connected with the bottom of the base, and the other end of the supporting shaft extends downwards to the outside of the cavity; the baffle plate and the anode press ring are positioned in the cavity, and the baffle plate extends downwards from the periphery of the sputtering assembly to the periphery of the base; the anode press ring extends to the upper side of the edge of the substrate, and a plurality of grooves with upward openings are uniformly arranged on the anode press ring at intervals. According to the application, the plurality of grooves are formed in the anode press ring, so that the surface area of the anode press ring is greatly increased in a limited space, the service life of the anode press ring is prolonged, the sputtering rate and the stability are improved, and the equipment yield is improved. Therefore, the application effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present application and its effectiveness, and are not intended to limit the application. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the application. Accordingly, it is intended that all equivalent modifications and variations of the application be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (9)
1. A radio frequency magnetron sputtering apparatus, comprising: the sputtering device comprises a cavity, a sputtering assembly, a base, a supporting shaft, a baffle plate and an anode compression ring; the sputtering component is positioned at the top of the cavity; the base is positioned in the cavity and used for bearing the substrate; one end of the supporting shaft is connected with the bottom of the base, and the other end of the supporting shaft extends downwards to the outside of the cavity; the baffle plate and the anode press ring are positioned in the cavity, and the baffle plate extends downwards from the periphery of the sputtering assembly to the periphery of the base; the anode press ring extends to the upper part of the edge of the substrate, a plurality of grooves with upward openings are uniformly arranged on the anode press ring at intervals, and the anode press ring is of a structure with a non-conductive material surface plated with an anode conductive film or is made of a conductive material as a whole;
the radio frequency magnetron sputtering equipment further comprises an annular auxiliary anode positioned in the cavity, wherein the auxiliary anode is annularly arranged on the circumference of the supporting shaft and is in surface-to-surface direct contact with the bottom surface of the cavity.
2. The radio frequency magnetron sputtering apparatus according to claim 1, wherein the groove is an annular groove provided along a circumferential direction of the anode pressure ring, and/or the groove is a circular groove.
3. The radio frequency magnetron sputtering apparatus of claim 1 wherein the depth of the recess is 10mm-100mm.
4. The rf magnetron sputtering apparatus of claim 1, wherein the anode pressure ring is pressed against the edge of the substrate or against the pedestal by a support structure.
5. The rf magnetron sputtering apparatus of claim 4, wherein the bottom surface of the anode pressure ring is spaced from the substrate by a vertical distance of 0.2mm to 0.3mm.
6. The radio frequency magnetron sputtering apparatus of claim 1 wherein the material of the anode pressure ring comprises one or more of stainless steel, aluminum alloy and titanium alloy, and the surface of the anode pressure ring is roughened.
7. The rf magnetron sputtering apparatus of claim 1, wherein the shield plate comprises an upper shield plate and a lower shield plate, one end of the upper shield plate is connected with an adapter block provided on the chamber, the other end extends to the periphery of the sputtering assembly, one end of the lower shield plate is connected with the adapter block, the other end extends downward to the periphery of the base, and one end of the anode press ring is fixed to the lower shield plate.
8. The rf magnetron sputtering apparatus of claim 1 wherein the anode pressure ring has a thickness that decreases gradually from the periphery toward the center.
9. The rf magnetron sputtering apparatus of claim 1 wherein the recess inner surface has a stepped configuration.
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| CN202311034895.6A CN116752112B (en) | 2023-08-17 | 2023-08-17 | Radio frequency magnetron sputtering equipment |
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| CN116752112A (en) | 2023-09-15 |
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