CN110527967B

CN110527967B - Physical vapor deposition apparatus

Info

Publication number: CN110527967B
Application number: CN201910896402.7A
Authority: CN
Inventors: 周云; 宋维聪; 潘钱森; 霍焕俊
Original assignee: Shanghai Betone Semiconductor Energy Technology Co ltd
Current assignee: Shanghai Betone Semiconductor Energy Technology Co ltd
Priority date: 2019-09-23
Filing date: 2019-09-23
Publication date: 2020-09-11
Anticipated expiration: 2039-09-23
Also published as: CN110527967A

Abstract

The invention provides a physical vapor deposition device, which deposits a film on the surface of a wafer through alternating current or pulse direct current magnetron sputtering; the device comprises a cavity, a permanent magnet device, a target, a cavity adapter, an electromagnetic coil and a wafer tray; the wafer tray is used for bearing a wafer and is connected with a radio frequency power supply to form negative bias; the cavity is provided with an upper cavity part and a lower cavity part, and the cavity adapter is connected between the upper cavity part and the lower cavity part and used for increasing the distance between the target and the wafer tray; the permanent magnet device is positioned above the target and used for generating a primary magnetic field to realize magnetron sputtering; the electromagnetic coil is used to generate a secondary magnetic field to increase the plasma density at the edge of the target. The invention can directly realize the planarization of the film layer in the deposition process of the film layer, avoids the step of using a CMP planarization process to planarize the film layer, greatly reduces the production cost, simultaneously avoids the wafer cracking possibly caused by the CMP planarization process, and greatly improves the productivity.

Description

Physical vapor deposition apparatus

Technical Field

The invention relates to semiconductor manufacturing equipment, in particular to physical vapor deposition equipment.

Background

In semiconductor manufacturing, it is often necessary to deposit a thin film on a wafer surface or a device surface using a physical vapor deposition apparatus. For example, a temperature compensation type acoustic surface filter (TC-SAW) is a new acoustic surface filter developed to enhance the temperature stability of the acoustic surface filter, and is widely used in the field of communications. In order to realize a temperature compensation type surface acoustic wave device, a metal interdigital transducer is firstly manufactured on a lithium niobate or lithium tantalate piezoelectric wafer, and then a silicon oxide temperature compensation layer with a certain thickness is plated. The silicon oxide layer can effectively improve the rigidity of the metal insertion finger structure, improve the electromechanical coupling of the surface acoustic wave and the piezoelectric wafer, and simultaneously effectively reduce the drift of the frequency of the device along with the temperature change, so that the Temperature Coefficient of Frequency (TCF) of the device can be greatly reduced, for example, the TCF value of a common acoustic surface filter is about-45 ppm/DEG C, and the TCF value of a temperature compensation type acoustic surface filter can be reduced to be lower than-20 ppm/DEG C. Such devices with low TCF values are known as temperature compensated acoustic surface filters.

At present, the physical vapor deposition method is often used to prepare a thin film, such as the above-mentioned silicon oxide temperature compensation layer. Because the metal interdigital structure has a certain thickness, after the deposition of the silicon oxide film 102 is completed on the metal interdigital structure 101, the surface thereof has an uneven structure, as shown in fig. 1, which may cause the electrical performance of the device to deteriorate. The mainstream processing method at home and abroad is to perform Chemical Mechanical Planarization (CMP) processing on the surface of the temperature compensation layer, but the CMP equipment is expensive, the manufacturing cost is greatly increased by adding a CMP process, and the piezoelectric wafer is prone to cracking in the CMP process.

Meanwhile, in order to ensure the frequency and temperature compensation performance, reliability, stability, and product uniformity of a temperature compensation type acoustic surface filter (TC-SAW), there is a high requirement for the thickness uniformity of a silicon oxide layer, for example, for a wafer having a diameter of four inches, the thickness uniformity of the silicon oxide layer is required to have a standard deviation of < 1%.

Disclosure of Invention

In view of the above drawbacks of the prior art, an object of the present invention is to provide a physical vapor deposition apparatus, which is used to solve the problems of increased cost and increased risk of cracking caused by the need of performing chemical mechanical planarization after the deposition of a film layer in the prior art, so as to directly achieve the planarization of the surface of the film layer during the deposition of the film layer, avoid the use of a CMP planarization process, reduce the production cost, and prevent cracking.

In order to achieve the above objects and other related objects, the present invention provides a physical vapor deposition apparatus for depositing a thin film on a wafer surface by ac or pulsed dc magnetron sputtering; the physical vapor deposition apparatus includes: the device comprises a cavity, a permanent magnet device, a target, a cavity adapter and a wafer tray; the target is positioned at the top of the cavity; the wafer tray is positioned at the lower part of the cavity and used for bearing a wafer, and the wafer tray is connected with a radio frequency power supply to form negative bias; the cavity is provided with an upper cavity part and a lower cavity part, and the cavity adapter is connected between the upper cavity part and the lower cavity part and used for increasing the distance between the target and the wafer tray; the permanent magnet device is positioned above the target and used for generating a primary magnetic field to realize magnetron sputtering.

Optionally, the magnetic field generator further comprises one or more electromagnetic coils, and the electromagnetic coils are arranged on the cavity adapter or the cavity wall of the cavity and used for generating a secondary magnetic field.

Further, the electromagnetic coil adjusts the strength and direction of the secondary magnetic field by changing the magnitude and direction of the input current, thereby optimizing the plasma density near the target surface.

Furthermore, by adjusting the strength and the direction of the secondary magnetic field, the plasma density and the sputtering rate at the edge of the target material can be improved, so that the thickness of a film deposited at the edge of the wafer is increased.

Optionally, the electromagnetic coil is placed outside or inside the cavity.

Optionally, one or more magnetic rings are also included for generating the secondary magnetic field.

Further, the magnetic ring is installed outside or inside the cavity, and the strength and direction of the secondary magnetic field are adjusted by moving the magnetic ring up and down and using the magnetic rings with different polarities, so that the plasma density near the surface of the target is optimized.

Optionally, the device further comprises an anode ring, wherein the anode ring is positioned on the cavity wall at the edge of the target material.

The first part of the upper baffle plate is connected with a cavity wall between the anode ring and the cavity adapter, and the second part of the upper baffle plate extends downwards to shield the cavity wall.

Optionally, the wafer support device further comprises a lower baffle plate, wherein the lower baffle plate is connected to the cavity wall and extends towards the wafer tray, and is used for shielding the side face of the wafer tray.

Optionally, the distance between the target and the wafer tray is adjusted by up-and-down movement of the wafer tray and the cavity adapters with different thicknesses, and the adjustment range of the distance between the target and the wafer tray is between 40mm and 90 mm.

Further, the distance between the target and the wafer tray is adjusted to be between 80mm and 90 mm.

Optionally, the cavity adapter is provided with a sealing ring at the joint with the upper cavity part and the lower cavity part respectively.

Optionally, the material of the wafer tray includes one of stainless steel and aluminum alloy.

Optionally, the surface of the wafer tray is plated with an oxide layer or a nitride layer.

Further, one of chromium oxide, a silicon oxide layer and an aluminum nitride layer is plated on the surface of the wafer tray.

Optionally, the negative bias formed on the wafer tray is used to increase the kinetic energy of the positive charge ions moving towards the wafer tray to bombard the raised region of the film layer on the surface of the wafer, so that the particles in the raised region are separated from the film layer, and the recessed region in the film layer is refilled, thereby achieving planarization of the film layer.

Optionally, the frequency range adopted by the radio frequency power supply is between 400KHz and 27MHz, and the loaded radio frequency power range is between 100W and 450W.

Optionally, the wafer diameter is 75mm or more.

Optionally, the material of the wafer is selected from one of a lithium niobate piezoelectric wafer and a lithium tantalate piezoelectric wafer.

Optionally, the wafer has a raised structure thereon.

Further, the protruding structures comprise metal interdigitated structures.

Optionally, the kind of the thin film deposited by the physical vapor deposition device comprises silicon oxide.

As described above, the physical vapor deposition apparatus of the present invention has the following advantageous effects:

the physical vapor deposition equipment can directly realize the planarization of the film layer in the deposition process of the silicon oxide film, avoids the traditional step of using a CMP (chemical mechanical polishing) planarization process to planarize the film layer, can greatly reduce the production cost, and simultaneously avoids the wafer cracking possibly caused by the CMP planarization process, thereby greatly improving the productivity. The method is used in the field of manufacturing of the temperature compensation acoustic surface filter (TC-SAW), can directly realize the planarization of the silicon oxide layer on the insert finger structure in the deposition process of the silicon oxide film, can greatly reduce the production cost because a CMP planarization process is not needed, simultaneously avoids the CMP planarization process to stop the cracking of a wafer, greatly improves the productivity, and brings considerable economic benefits for manufacturers of the temperature compensation acoustic surface filter (TC-SAW).

According to the invention, the thin smooth and compact oxide layer or nitride layer is plated on the surface of the wafer tray, so that the probability of splintering can be greatly reduced; tests show that the oxide layer or the nitride layer can reduce the fragment rate of the piezoelectric wafer in the high bias process from 2% to 0.5% or even lower, thereby effectively reducing the cost, improving the productivity and bringing good economic benefit to manufacturers.

Drawings

Fig. 1 shows a schematic diagram of a silicon oxide deposited by a physical vapor deposition apparatus in the prior art, the silicon oxide surface exhibiting a rugged structure.

FIG. 2 is a schematic structural diagram of a physical vapor deposition apparatus according to the present invention.

FIG. 3 is a scanning electron microscope image of silicon oxide deposited by the PVD equipment of the invention under high bias normal target-to-substrate process conditions.

FIG. 4 is a scanning electron microscope image of silicon oxide deposited by the PVD equipment of the invention under high bias and large target-substrate distance process conditions.

FIG. 5 is a graph showing the relationship between the uniformity of the thickness of a silicon oxide film deposited by the PVD equipment of the invention and the magnitude of the current of the electromagnetic coil at a target pitch of 80 mm.

Element number description:

the plasma processing apparatus includes a chamber 201, a lower chamber 2011, an upper chamber 2012, a target 202, an anode ring 203, an upper baffle 204, a first portion 2041, a second portion 2042, a lower baffle 205, an electromagnetic coil 206, a chamber adapter 207, a wafer tray 208, a wafer 209, a permanent magnet device 210, and an rf power source 211.

Detailed Description

The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.

As in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structures are not partially enlarged in general scale for convenience of illustration, and the schematic views are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.

For convenience in description, spatial relational terms such as "below," "beneath," "below," "under," "over," "upper," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these terms of spatial relationship are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

In the context of this application, a structure described as having a first feature "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed in between the first and second features, such that the first and second features may not be in direct contact.

It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.

The invention provides a method for depositing a silicon oxide film on the surface of a wafer by using a permanent magnet device 210 in a physical vapor deposition chamber through alternating current or pulse direct current magnetron sputtering, which greatly increases the distance from a target 202 to a wafer tray 208 by adding a chamber adapter 207, simultaneously coordinates with negative bias loaded on the wafer tray 208 to further optimize the flatness of silicon oxide filling, and improves the magnetic field distribution on the surface of the target 202 and optimizes the thickness uniformity of the silicon oxide film through an adjustable electromagnetic coil 206 or the permanent magnet device 210.

To achieve the above purpose, as shown in fig. 2, the present embodiment provides a pvd apparatus, which mainly includes a chamber 201, a permanent magnet device 210, a target 202, an anode ring 203, a chamber adapter 207, an electromagnetic coil 206, a wafer tray 208, an upper baffle 204, and a lower baffle 205.

As shown in fig. 2, the target 202 is located at the top of the chamber 201 and is used for providing a material source required for physical vapor deposition, the target is connected to an ac power source or a pulsed dc power source, and the high-energy ions are used to eject material particles in the target 202 to deposit a material film on the surface of the wafer 209.

As shown in fig. 2, the wafer tray 208 is located at a lower portion of the chamber 201 for carrying a wafer 209, and the wafer tray 208 is connected to a radio frequency power source 211 for forming a negative bias voltage. The negative bias formed on the wafer tray 208 is used to increase the kinetic energy of the positive charge ions moving toward the wafer tray 208 to bombard the raised regions of the film layer on the surface of the wafer 209, so that the particles in the raised regions are separated from the film layer, and the recessed regions in the film layer are refilled, thereby achieving the planarization of the film layer. For example, the frequency range adopted by the rf power source 211 is between 400KHz and 27MHz, in this embodiment, the frequency adopted by the rf power source 211 may be 13.56 MHz, and the loaded rf power range is between 100W and 450W.

The material of the wafer tray 208 includes one of stainless steel and aluminum alloy. For a general silicon oxide sputtering process chamber, generally under a high bias pressure process condition, a wafer 209, especially a piezoelectric wafer, such as a lithium niobate piezoelectric wafer and a lithium tantalate piezoelectric wafer, is prone to cracking due to arcing during a physical vapor deposition process, in order to improve the above defects, in this embodiment, an oxide layer or a nitride layer is plated on the surface of the wafer tray 208, for example, the oxide layer or the nitride layer may be a silicon oxide layer, a chromium oxide layer, or an aluminum nitride layer, and the plating of the oxide layer or the nitride layer may greatly reduce the cracking rate of the piezoelectric wafer during the process. Tests show that the oxide layer or the nitride layer can reduce the fragment rate of the piezoelectric wafer in the high bias process from 2% to 0.5% or even lower, thereby effectively reducing the cost, improving the productivity and bringing good economic benefit to manufacturers.

In order to improve the flatness of the film deposition, as shown in fig. 2, the chamber 201 has an upper chamber 2012 and a lower chamber 2011, and the chamber adapter 207 is connected between the upper chamber 2012 and the lower chamber 2011 for increasing the distance between the target 202 and the wafer tray 208. The chamber adapter 207 is used to increase the distance (target base distance) from the target 202 to the wafer tray 208, the target base distance is increased after the chamber adapter 207 is added, meanwhile, the adjustable range of the target base distance is increased because the position of the wafer tray 208 can move up and down relative to the target 202, the distance between the target 202 and the wafer tray 208 is adjusted by the up and down movement of the wafer tray 208 and the chamber adapter 207 with different thicknesses, and the adjustable range of the distance between the target 202 and the wafer tray 208 is between 40mm and 90 mm. Specifically, the larger the target base distance, the better the directionality of the vertical or near vertical downward movement of the positively charged particles and the sputtered particles from the surface of the target 202, which is beneficial for improving the flatness of the film (e.g., silicon oxide) filling between the protruding structures (e.g., metal finger structures) on the wafer surface. Accordingly, in the present embodiment, the optimal distance between the target 202 and the wafer tray 208 is adjusted to be between 80mm and 90 mm.

Cavity adapter 207 with go up cavity 2012 and lower cavity 2011 can fix through screw and the screw that corresponds the setting, and be convenient for cavity adapter 207 with the dismantlement of going up cavity 2012 and lower cavity 2011 is convenient for change the cavity adapter 207 of different thickness according to actual demand to improve adjustable and application scope of equipment. In order to further improve the sealing performance of the cavity adapter 207 and the upper cavity 2012 and the lower cavity 2011, sealing rings are respectively arranged at the joints of the cavity adapter 207 and the upper cavity 2012 and the lower cavity 2011, and the sealing rings may be made of rubber or the like.

As shown in fig. 2, the electromagnetic coil 206 may be disposed outside or inside the chamber 201, for example, the electromagnetic coil 206 is disposed on the chamber adapter 207 or on the chamber wall of the chamber 201, and the electromagnetic coil 206 may be one or more for generating a secondary magnetic field to optimize the plasma density at the edge of the target 202. Specifically, the electromagnetic coil 206 is fixed on the cavity adapter 207 and is positioned at the same height or lower position with the target 202 to generate a secondary magnetic field, the intensity and direction of the secondary magnetic field generated by the coil can be adjusted by changing the input current of the electromagnetic coil 206, and the magnetic field distribution near the surface of the target 202 is optimized, so that the plasma density and sputtering rate at the edge of the target 202 can be effectively improved, the thickness of the film deposited on the edge of the wafer 209 is increased, and the uniformity of the deposited film is optimized.

In another embodiment, the one or more electromagnetic coils 206 may be replaced by one or more magnetic rings for generating a secondary magnetic field, which may be mounted outside or inside the chamber, and the intensity and direction of the secondary magnetic field may be adjusted by moving the magnetic rings up and down and using magnetic rings of different polarity to optimize the plasma density near the target surface.

As shown in fig. 2, the permanent magnet device 210 is located above the target 202 for generating a primary magnetic field to realize normal magnetron sputtering.

As shown in fig. 2, the anode ring 203 is located on the chamber wall at the edge of the target 202. The upper baffle 204 includes a first portion 2041 and a second portion 2042, the first portion 2041 is connected to the chamber wall between the anode ring 203 and the chamber adapter 207, and the second portion 2042 extends downward to cover the chamber wall. Specifically, the anode ring 203 is located between the lateral heel wall of the edge of the target 202 and the upper baffle 204, and is used for preventing the surface of the anode in the cavity from being completely covered by a dielectric film (such as a silicon oxide insulating layer) in the sputtering process, ensuring the normal grounding of the anode, and avoiding the problem of anode disappearance. Meanwhile, the second portion 2042 of the upper baffle 204 can shield the cavity wall, the cavity adaptor 207 on the cavity wall and the electromagnetic coil 206, so that the problem that the sputtering particles are deposited on the cavity wall, and the film layer becomes thicker and finally peels off to cause excessive particles in the cavity 201 is avoided.

As shown in fig. 2, the lower baffle 205 is connected to the chamber wall and extends toward the wafer tray 208, so as to shield the side surface of the wafer tray 208 and prevent the sputtering particles from depositing on the surface thereof, which may cause excessive particles in the chamber 201.

The diameter of the wafer 209 placed on the wafer tray 208 may be selected to be more than 75 mm. The material of the wafer 209 is preferably a piezoelectric wafer, for example, the piezoelectric wafer may be selected from one of a lithium niobate piezoelectric wafer and a lithium tantalate piezoelectric wafer. The wafer 209 has a raised structure thereon, for example, the raised structure includes a metal interdigital structure, and the material of the metal interdigital structure is preferably aluminum or titanium.

The physical vapor deposition equipment of the embodiment can deposit the film layers of different materials according to actual requirements, and particularly, when the type of the film deposited by the physical vapor deposition equipment is silicon dioxide, the uniformity of the thickness of the film layer is greatly improved.

In a specific implementation process, a silicon oxide film is deposited on the wafer 209 by using the physical vapor deposition apparatus of the present embodiment, wherein the diameter of the wafer 209 is selected to be 75mm, the material of the wafer 209 is selected to be a lithium niobate or lithium tantalate piezoelectric chip, and the wafer 209 has a patterned metal interdigital structure, the height of which is 170nm, and the width of which is 450 nm.

When the target base distance is the same as that of a standard physical deposition process chamber (usually 35-50 mm), a Radio Frequency (RF) negative bias is only applied to the wafer tray 208, and the silicon oxide film is deposited under the condition of RF power of 150 and 200W, so that the SEM image of the silicon oxide surface under the condition of high bias normal target base distance as shown in fig. 3 can be obtained.

When the target base distance of the physical vapor deposition process chamber is increased to 80mm, the wafer tray 208 is also loaded with the RF bias, and the silicon oxide film is deposited under the condition of RF power of 150-. The silicon oxide deposition equipment with high bias and large target base distance can still meet the requirement of a temperature compensation type acoustic surface filter (TC-SAW) under the condition of not carrying out CMP planarization treatment after relevant tests of the acoustic surface filter, and the TCF value of a device can be reduced to-10 ppm/DEG C.

After the target base distance is increased, the edge of silicon oxide deposited on the wafer is thin, the middle of the wafer is relatively thick, and the uniformity of the film thickness is poor. The larger the base distance, the thinner the wafer edge relative to the middle, and the electromagnetic coil 206 is used to enhance the magnetic field strength at the edge of the target 202, thereby increasing the sputtering rate at the wafer edge and optimizing the uniformity of the silicon oxide film thickness. FIG. 5 is a graph showing the relationship between the uniformity of the silicon oxide film thickness and the current level of the electromagnetic coil 206 under the condition that the target base distance is 80 mm; it can be seen that the standard deviation of the silicon oxide thickness uniformity for a four inch diameter wafer can be reduced from 4.16% to 0.81% by using the electromagnetic coil 206.

According to the invention, a thin smooth and compact oxide layer or nitride layer is plated on the surface of the wafer tray 208, so that the probability of cracking can be greatly reduced; tests show that the oxide layer or the nitride layer can reduce the fragment rate of the piezoelectric wafer in the high bias process from 2% to 0.5% or even lower, thereby effectively reducing the cost, improving the productivity and bringing good economic benefit to manufacturers.

Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.

The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims

1. Physical vapor deposition equipment is characterized in that a film is deposited on the surface of a wafer through alternating current or pulse direct current magnetron sputtering; the physical vapor deposition apparatus includes: the device comprises a cavity, a permanent magnet device, a target, a cavity adapter and a wafer tray; the target is positioned at the top of the cavity; the wafer tray is positioned at the lower part of the cavity and used for bearing a wafer, the wafer tray is connected with a radio frequency power supply to form negative bias, and the surface of the wafer tray is plated with a smooth and compact oxide layer or nitride layer; the cavity is provided with an upper cavity part and a lower cavity part, and the cavity adapter is connected between the upper cavity part and the lower cavity part and used for increasing the distance between the target and the wafer tray; the permanent magnet device is positioned above the target and used for generating a primary magnetic field to realize magnetron sputtering; the electromagnetic coil is arranged on the cavity adapter or the cavity wall of the cavity, the electromagnetic coil and the target are at the same height or at a lower position and used for generating a secondary magnetic field, the electromagnetic coil adjusts the strength and the direction of the secondary magnetic field by changing the magnitude and the direction of input current, so that the plasma density near the surface of the target is optimized, and the plasma density and the sputtering rate at the edge of the target can be improved by adjusting the strength and the direction of the secondary magnetic field, so that the thickness of a film layer deposited at the edge of the wafer is increased.

2. The physical vapor deposition apparatus of claim 1, wherein: the electromagnetic coil is placed outside or inside the cavity.

3. The physical vapor deposition apparatus of claim 1, wherein: one or more magnetic rings are also included for generating a secondary magnetic field.

4. The physical vapor deposition apparatus of claim 3, wherein: the magnetic ring is arranged outside or inside the cavity, and the strength and direction of the secondary magnetic field are adjusted by moving the magnetic ring up and down and using the magnetic rings with different polarities, so that the plasma density near the surface of the target is optimized.

5. The physical vapor deposition apparatus of claim 1, wherein: the device also comprises an anode ring, wherein the anode ring is positioned on the cavity wall at the edge of the target material.

6. The physical vapor deposition apparatus of claim 5, wherein: the anode adapter further comprises an upper baffle plate, the first part of the upper baffle plate is connected to the cavity wall between the anode ring and the cavity adapter, and the second part of the upper baffle plate extends downwards to shield the cavity wall.

7. The physical vapor deposition apparatus of claim 1, wherein: the lower baffle is connected to the cavity wall and extends towards the wafer tray, and is used for shielding the side face of the wafer tray.

8. The physical vapor deposition apparatus of claim 1, wherein: the distance between the target and the wafer tray is adjusted through the up-and-down movement of the wafer tray and the cavity adapters with different thicknesses, and the adjusting range of the distance between the target and the wafer tray is between 40mm and 90 mm.

9. The physical vapor deposition apparatus of claim 8, wherein: the distance between the target and the wafer tray is adjusted to be 80-90 mm.

10. The physical vapor deposition apparatus of claim 1, wherein: and sealing rings are respectively arranged at the joints of the cavity adapter and the upper cavity part and the lower cavity part.

11. The physical vapor deposition apparatus of claim 1, wherein: the material of the wafer tray comprises one of stainless steel and aluminum alloy.

12. The physical vapor deposition apparatus of claim 1, wherein: one of chromium oxide, a silicon oxide layer and an aluminum nitride layer is plated on the surface of the wafer tray.

13. The physical vapor deposition apparatus of claim 1, wherein: the negative bias formed on the wafer tray is used for increasing the kinetic energy of the positive charge ions moving towards the wafer tray so as to bombard the raised area of the film layer on the surface of the wafer, so that the particles in the raised area are separated from the film layer, and the depressed area in the film layer is refilled, thereby realizing the planarization of the film layer.

14. The physical vapor deposition apparatus of claim 1, wherein: the frequency range adopted by the radio frequency power supply is between 400KHz and 27MHz, and the loaded radio frequency power range is between 100W and 450W.

15. The physical vapor deposition apparatus of claim 1, wherein: the wafer diameter is 75mm or more.

16. The physical vapor deposition apparatus of claim 1, wherein: the material of the wafer is selected from one of a lithium niobate piezoelectric wafer and a lithium tantalate piezoelectric wafer.

17. The physical vapor deposition apparatus of claim 1, wherein: the wafer has a raised structure thereon.

18. The physical vapor deposition apparatus of claim 17, wherein: the raised structures comprise metal interdigitated structures.

19. The physical vapor deposition apparatus of any one of claims 1 to 18, wherein: the film deposited by the physical vapor deposition equipment comprises silicon oxide.