CN114318272A - Method for reducing arc discharge of substrate in magnetron sputtering process - Google Patents
Method for reducing arc discharge of substrate in magnetron sputtering process Download PDFInfo
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- CN114318272A CN114318272A CN202210186483.3A CN202210186483A CN114318272A CN 114318272 A CN114318272 A CN 114318272A CN 202210186483 A CN202210186483 A CN 202210186483A CN 114318272 A CN114318272 A CN 114318272A
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- 238000000034 method Methods 0.000 title claims abstract description 72
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 64
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- 238000010891 electric arc Methods 0.000 title claims abstract description 19
- 239000004020 conductor Substances 0.000 claims abstract description 34
- 238000009826 distribution Methods 0.000 claims abstract description 9
- 230000002265 prevention Effects 0.000 abstract description 3
- 230000009467 reduction Effects 0.000 abstract description 3
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- 238000004544 sputter deposition Methods 0.000 description 3
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Abstract
The invention provides a method for reducing arc discharge of a substrate in a magnetron sputtering process, which comprises the following steps: placing the substrate on a bearing unit of a magnetron sputtering machine; executing a magnetron sputtering process, wherein the area of the substrate exposed outside the bearing unit is covered with a conductive material layer; acquiring actual position information of the substrate relative to the shielding unit or the bearing unit; and acquiring deviation data of the actual position information of the substrate relative to the standard position information of the substrate on the bearing unit, and if the deviation data exceeds a preset deviation, correspondingly adjusting the magnetron sputtering machine table to enable the placing position of the substrate to be within the preset deviation of the standard position. According to the invention, the position of the substrate is obtained by measuring the distribution of the conductive material layer on the back surface of the substrate, the deviation of the position of the substrate relative to the standard position is further obtained, and if the deviation exceeds the preset range, the subsequent position for placing the substrate is correspondingly adjusted to enable the deviation to be within the preset range, so that the prevention and reduction of the arc discharge of the substrate in the magnetron sputtering process are realized.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for reducing arc discharge of a substrate in a magnetron sputtering process.
Background
Physical Vapor Deposition (PVD) is a widely used method for depositing metal films and other related materials in semiconductor manufacturing processes. Common physical vapor deposition methods include vacuum evaporation (vacuum evaporation), magnetron sputtering (magnetron sputtering), and arc ion plating (arc ion plating). The magnetron sputtering has the advantages of simple equipment, easy control, large coating area, strong adhesive force and the like.
As shown in fig. 1, in a chamber of a magnetron sputtering apparatus, a substrate 10 (e.g. a wafer) is placed on a carrying unit 20, and a shielding unit 30 is disposed below the carrying unit 20 to surround the carrying unit 20 and the substrate 10. The edge of the surface of the substrate 10 coated by the magnetron sputtering machine often has a trace of arc damage, and thus, the yield of the substrate is partially lost. At present, no good solution is provided for the arc discharge phenomenon of the substrate in the magnetron sputtering process.
Disclosure of Invention
The invention aims to provide a method for reducing arc discharge of a substrate in a magnetron sputtering process, which is used for reducing and preventing the phenomenon of arc discharge of the substrate in the magnetron sputtering process.
In order to solve the above technical problems, the present invention provides a method for reducing arc discharge of a substrate in a magnetron sputtering process, comprising: placing a substrate on a bearing unit of a magnetron sputtering machine, wherein a shielding unit is arranged below the substrate and surrounds the bearing unit; executing a magnetron sputtering process, wherein a conductive material layer covers the area of the substrate exposed outside the bearing unit; acquiring actual position information of the substrate relative to the shielding unit or the bearing unit based on the distribution of the conductive material layer on the back surface of the substrate; acquiring deviation data of the actual position information of the substrate relative to standard position information of the substrate on the bearing unit, and if the deviation data exceeds a preset deviation, adjusting the magnetron sputtering machine to enable the placement position of the substrate to be within the preset deviation of the standard position.
Optionally, the bearing unit is in a shape of a circular table plate.
Optionally, the substrate is circular, and the diameter of the substrate is 1.01 to 1.05 times of the diameter of the bearing unit.
Optionally, a protruding portion is disposed on one side of the shielding unit facing the substrate, the protruding portion surrounds the substrate, and the height of the protruding portion is higher than the height of the substrate on the bearing table.
Optionally, the center of the substrate relative to the standard position of the bearing unit coincides with the center of the bearing unit.
Optionally, the conductive material layer on the back surface of the substrate is annular, and the actual position information includes a maximum value and a minimum value of the width of the conductive material layer on the back surface of the substrate, and direction information of the maximum value.
Optionally, a position deviation between a placement position of the substrate relative to the bearing unit and a preset position is half of a difference between the maximum value and the minimum value.
Optionally, the preset deviation is 200-300 micrometers.
Optionally, a lifting unit is further disposed in the carrying unit, and the lifting unit lifts to pick and place the substrate.
Optionally, the method for correspondingly adjusting the position of the substrate placed on the carrying unit includes: when the substrate is placed in, the placing position of the substrate relative to the lifting unit is adjusted, so that the position of the substrate relative to the bearing unit is within the preset range.
In summary, the method for reducing the arc discharge of the substrate in the magnetron sputtering process provided by the invention has the following beneficial effects: the method comprises the steps of measuring the distribution of a conductive material layer on the back of a substrate to obtain actual position information of the substrate relative to a bearing unit or a shielding unit, further obtaining deviation data of the actual position information of the substrate relative to a standard position of the bearing unit or the shielding unit, and correspondingly adjusting the placement position of the substrate relative to the bearing unit or the shielding unit if the deviation data exceeds a preset deviation, so that the substrate has a relatively uniform spacing distance relative to the shielding unit, and the reduction and prevention of substrate arc discharge in a magnetron sputtering process are realized.
Drawings
It will be appreciated by those skilled in the art that the drawings are provided for a better understanding of the invention and do not constitute any limitation to the scope of the invention.
FIG. 1 is a schematic view of a PVD tool.
Fig. 2 is a flowchart of a method for reducing arc discharge of a substrate in a magnetron sputtering process according to an embodiment of the present disclosure.
Fig. 3 is a schematic view of a backside of a substrate after a PVD process according to an embodiment of the disclosure.
In fig. 1 and 3: 10-a substrate; 11-back side of substrate; 12-labeling; 20-a carrying unit; 30-a shielding unit; 31-a boss; 40-a layer of conductive material; w1-max; w2-minimum value.
Detailed Description
In the cavity of the magnetron sputtering apparatus shown in fig. 1, a protruding portion 31 is disposed on a side (upward side) of the shielding unit 30 facing the substrate 10, the protruding portion 31 surrounds the carrying unit 20 and the substrate 10, and a height of a top of the protruding portion 31 is higher than a height of the substrate placed on the carrying unit 20, so as to reduce sputtering of plasma to a non-target area (an area where the substrate is located) during magnetron sputtering, and a surface of the shielding unit 30 is covered with a conductive material layer 40.
The inventors found through many experiments that when there is a deviation in the position where the substrate 10 is placed on the carrier unit 20, the distance between the edge of the substrate 10 and the convex portion 31 of the shielding unit 30 is not uniform, and when the distance is reduced to a certain extent, static electricity accumulated on the surface of the substrate 10 and the surface of the shielding unit is easily discharged therefrom to generate arc discharge, thereby damaging the edge of the substrate 10. Specifically, in the experimental process of the inventor, arc discharge may be generated when the position deviation of the substrate 10 on the supporting unit 20 exceeds 300 μm, and the position deviation of the substrate 10 relative to the supporting unit 20 in the actual magnetron sputtering process has no influence on the thickness and quality of the deposited film layer, so that a detection device or a detection mechanism for the actual position of the substrate 10 relative to the supporting unit 20 is not provided in the magnetron sputtering machine, and the substrate position detection device directly provided in the cavity of the magnetron sputtering machine is also very prone to malfunction or damage in the magnetron sputtering process (plasma).
Meanwhile, the inventors also found that, because the size of the substrate 10 is slightly larger than that of the carrying unit 20, a partial area of the substrate back 11 is also covered with a layer of conductive material 40 after the magnetron sputtering process, that is, an area of the substrate back 11 exposed outside the carrying unit 20 is also covered with a layer of conductive material 40.
Based on the above research of the inventor, the embodiments of the present invention provide a method for reducing wafer arcing in a magnetron sputtering process, in which the distribution of a conductive material layer on the back surface of a substrate is measured to monitor the actual position of the substrate relative to a carrying unit, and if the deviation between the actual position of the substrate and a standard position exceeds a preset range, the placement position of the substrate relative to the carrying unit is correspondingly adjusted, so as to reduce and prevent the arcing of the substrate in the magnetron sputtering process.
To further clarify the objects, advantages and features of the present invention, a more particular description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings. It is to be noted that the drawings are in greatly simplified form and are not to scale, but are merely intended to facilitate and clarify the explanation of the embodiments of the present invention. Further, the structures illustrated in the drawings are often part of actual structures. In particular, the drawings may have different emphasis points and may sometimes be scaled differently.
As used in this application, the singular forms "a", "an" and "the" include plural referents, the term "or" is generally employed in a sense including "and/or," the terms "a" and "an" are generally employed in a sense including "at least one," the terms "at least two" are generally employed in a sense including "two or more," and the terms "first", "second" and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit to the number of technical features indicated. Thus, features defined as "first," "second," and "third" may explicitly or implicitly include one or at least two of the features unless the content clearly dictates otherwise.
Fig. 2 is a flowchart of a method for reducing arcing to a substrate in a magnetron sputtering process according to an embodiment of the present disclosure.
As shown in fig. 2, the method for reducing arc discharge of a substrate in a magnetron sputtering process provided by this embodiment includes:
s01: placing a substrate on a bearing unit of a magnetron sputtering machine, wherein a shielding unit is arranged below the substrate and surrounds the bearing unit;
s02: executing a magnetron sputtering process, wherein a conductive material layer covers the area of the substrate exposed outside the bearing unit;
s03: acquiring actual position information of the substrate relative to the shielding unit or the bearing unit based on the distribution of the conductive material layer on the back surface of the substrate;
s04: acquiring deviation data of the actual position information of the substrate relative to standard position information of the substrate on the bearing unit, and if the deviation data exceeds a preset deviation, adjusting the magnetron sputtering machine to enable the placement position of the substrate to be within the preset deviation of the standard position.
The conductive material layer formed by the magnetron sputtering process may be any suitable conductive material layer, and the substrate may be made of any suitable material, such as silicon, glass, ceramic, or sapphire. In this embodiment, the substrate is made of silicon (wafer), and the conductive material layer formed by the magnetron sputtering process is a metal material layer.
The following describes a method for reducing substrate arcing in a magnetron sputtering process in detail with reference to a flowchart.
First, step S01 is executed to place the substrate 10 on the carrying unit 20 of the magnetron sputtering apparatus, wherein a shielding unit 30 is disposed below the substrate 10, and the shielding unit 30 surrounds the carrying unit 20.
As shown in fig. 1, the supporting unit 20 is disposed in a chamber of a magnetron sputtering apparatus, and the supporting unit 20 may be, for example, an electrostatic chuck for supporting and fixing the substrate 10. The carrier unit 20 is further provided with a plurality of lifting units for cooperating with a transfer unit disposed outside the magnetron sputtering machine to achieve picking and placing (top and bottom) of the substrate 10. Specific sheet loading processes may be, for example: opening a pick-and-place window of the magnetron sputtering device, lifting the lifting unit to a sheet loading position, placing the substrate 10 on the lifting unit by the conveying unit according to preset parameters, lowering the lifting unit into the bearing unit 20, placing the substrate 10 on the bearing unit 20, and fixing the substrate 10 on the bearing unit 20 by electrostatic adsorption. The position of the substrate 10 on the lift unit can be adjusted accordingly by adjusting the preset parameters, and the position of the substrate 10 on the lift unit matches with the position of the substrate 10 on the carrier unit 20.
The carrying unit 20 is in a shape of a circular table, the size (diameter) of the substrate 10 is slightly larger than the size of the carrying unit 20, for example, the diameter of the substrate 10 is 1.01 to 1.05 times of the diameter of the carrying unit 20, and the substrate is used for preventing the conductive material layer 40 in the magnetron sputtering process from being sputtered on the surface of the carrying unit 20 to damage the carrying unit 20.
Referring to fig. 1, a shielding unit 30 is further disposed below the substrate 10, and the shielding unit 30 surrounds the carrying unit 20 for preventing the plasma in the magnetron sputtering process from sputtering below the carrying unit 20. The shielding unit 30 is shaped as a circular ring, the inner side of the circular ring can contact with the carrying unit 20 and is located right below the substrate 10, and the diameter of the circular ring extending outward is larger than the diameter of the substrate 10 and the carrying unit 20. The shielding unit 30 is provided with a protruding portion 31 on a side (upward side) facing the substrate 10, the protruding portion 31 surrounds the substrate 10 along a circumferential direction of the shielding unit 30, and a top height of the protruding portion 31 is higher than a height of the substrate 10 on the carrying unit 20, so as to reduce outward sputtering of plasma in the magnetron sputtering process. The shielding unit 30 is made of an insulating material, such as ceramic or quartz.
The substrate 10 has a standard position on the carrying unit 20, and the center of the standard position coincides with the center of the carrying unit 20 (the center of the circle coincides), for example.
Next, step S02 is performed to perform a magnetron sputtering process, and the exposed area of the substrate 10 outside the carrying unit 20 is covered with the conductive material layer 40.
In the magnetron sputtering process, since the shielding unit 30 is located below the substrate 10 and the protruding portion 31 of the shielding unit 30 is spaced apart from the substrate 10, a gap is left between the shielding unit 30 and the substrate 10, so that a partial region of the back surface 11 of the substrate (a region exposed outside the carrying unit 20) is exposed to the plasma, thereby forming the conductive material layer 40 covering the partial region of the back surface. Of course, the front surface and the end surface of the substrate 10 are also covered with the conductive material layer 40.
Next, step S03 is executed to obtain the actual position information of the substrate 10 relative to the shielding unit 30 or the carrying unit 20 based on the distribution of the conductive material layer 40 on the substrate back surface 11.
The substrate 10 after the magnetron sputtering process is taken out, and the distribution of the conductive material layer 40 on the back surface 11 of the substrate is measured to obtain the actual position information thereof. Taking the circular carrier unit 20 as an example, the conductive material layer 40 on the back surface of the substrate 11 has a ring shape, and the placement position of the substrate 10 includes the direction information of the maximum value W1, the minimum value W2, and the maximum value W1 (or the minimum value W2) of the width of the conductive material layer 40 on the back surface 11 of the substrate.
Specifically, the width of the conductive material layer 40 (ring) on the back surface 11 of the substrate may be measured by a detection machine for detecting the Edge of the substrate 10 in an Edge photoresist Removal (EBR) process, so as to obtain a maximum value W1 and a minimum value W2 of the width of the conductive material layer 40 on the back surface 11 of the substrate, and determine the actual position of the substrate 10 relative to the carrier unit 20 and the shielding unit 30. Meanwhile, the angle (direction information) of the maximum value W1 or the minimum value W2 of the width of the conductive material layer 40 on the back surface 11 of the substrate with respect to a mark 12 on the substrate 10 can be obtained, so as to determine the direction of the position deviation of the substrate 10 with respect to the carrying unit 20 and the shielding unit 30, and facilitate the subsequent adjustment of the position deviation of the substrate 10. In the embodiment where the substrate 10 is a wafer, the mark 12 on the substrate 10 can be located at the center of the substrate 10 by connecting the maximum value W1 and the minimum value W2 of the orientation angle of the wafer.
Next, step S04 is executed to obtain deviation data of the actual position information of the substrate 10 relative to the standard position information of the substrate 10 on the carrying unit 20, and if the deviation data exceeds the preset deviation, the magnetron sputtering apparatus is adjusted accordingly to make the placement position of the substrate 10 within the preset deviation of the standard position.
Since the convex portion 31 on the shielding unit 30 uniformly surrounds the carrying unit 20 and the substrate 10, if the actual position of the substrate 10 on the carrying unit 20 is shifted, the distance between the substrate 10 and the convex portion 31 in the shifting direction is inevitably reduced (closer), which increases the probability of the edge of the substrate 10 being damaged by the arc.
It should be noted that the preset deviation is not the maximum allowable deviation of the substrate of the magnetron sputtering apparatus relative to the carrying unit, but is obtained according to practical experience data to solve the problem of the arc damage of the substrate, and the preset range is, for example, 200 to 300 micrometers. It will be appreciated that in practice it is difficult to detect the above-mentioned positional deviation from film quality-related measurements of the magnetron sputtering process, since the magnetron sputtering process itself is not sensitive to positional deviations of the substrate on the carrier unit, the maximum allowable deviation of which is much larger than the predetermined range.
Specifically, the deviation data (positional deviation data) of the actual positional information of the substrate 10 from the standard positional information may be half the difference between the maximum value W1 and the minimum value W2 of the width of the conductive material layer 40 of the substrate back surface 11. If the position deviation exceeds a predetermined deviation, for example, the predetermined deviation is 200 to 300 micrometers, the subsequent placement position of the substrate 10 on the carrying unit 20 needs to be adjusted accordingly, and the specific adjustment method may be, for example: during loading, the position of the substrate 10 placed on the lifting unit by the conveying unit is adjusted according to the position deviation and the angle of the substrate 10, so that the adjustment of the placing position of the substrate 10 relative to the carrying unit 20 is realized.
Preferably, the position deviation data of the substrate 10 after the magnetron sputtering process relative to the carrying unit 20 can be monitored at regular time or at regular frequency, and the change rule or change trend of the position deviation is analyzed to make a corresponding adjustment mode for controlling the position deviation within a smaller range, so as to further reduce the probability of the arc discharge of the substrate 10. Of course, it is also feasible to dedicate several monitor substrates to detect the position deviation data before starting the magnetron sputtering process.
In summary, the method for reducing the arc discharge of the substrate in the magnetron sputtering process provided by the invention has the following beneficial effects: the method comprises the steps of measuring the distribution of a conductive material layer on the back of a substrate to obtain actual position information of the substrate relative to a bearing unit or a shielding unit, further obtaining deviation data of the actual position information of the substrate relative to a standard position of the bearing unit or the shielding unit, and correspondingly adjusting the placement position of the substrate relative to the bearing unit or the shielding unit if the deviation data exceeds a preset deviation, so that the substrate has a relatively uniform spacing distance relative to the shielding unit, and the reduction and prevention of substrate arc discharge in a magnetron sputtering process are realized.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. A method for reducing arc discharge of a substrate in a magnetron sputtering process is characterized by comprising the following steps:
placing a substrate on a bearing unit of a magnetron sputtering machine, wherein a shielding unit is arranged below the substrate and surrounds the bearing unit;
executing a magnetron sputtering process, wherein a conductive material layer covers the area of the substrate exposed outside the bearing unit;
acquiring actual position information of the substrate relative to the shielding unit or the bearing unit based on the distribution of the conductive material layer on the back surface of the substrate;
acquiring deviation data of the actual position information of the substrate relative to standard position information of the substrate on the bearing unit, and if the deviation data exceeds a preset deviation, adjusting the magnetron sputtering machine to enable the placement position of the substrate to be within the preset deviation of the standard position.
2. The method of claim 1, wherein the supporting unit is in a shape of a circular table.
3. The method of claim 2, wherein the substrate is circular and has a diameter 1.01 to 1.05 times the diameter of the supporting unit.
4. The method of claim 1, wherein the shielding unit has a protrusion portion on a side facing the substrate, the protrusion portion surrounds the substrate, and the height of the protrusion portion is higher than the height of the substrate on the susceptor.
5. The method of claim 1, wherein the standard position of the substrate relative to the carrier unit is a position where a center of the substrate coincides with a center of the carrier unit.
6. The method of claim 5, wherein the conductive material layer on the back surface of the substrate has a ring shape, and the actual position information comprises a maximum value, a minimum value and direction information of the maximum value of the width of the conductive material layer on the back surface of the substrate.
7. The method of claim 6, wherein the deviation data is half of a difference between the maximum value and the minimum value.
8. The method of claim 1, wherein the predetermined range is 200-300 μm.
9. The method of claim 1, wherein a lifting unit is further disposed in the supporting unit, and the substrate is picked and placed by the lifting unit.
10. The method of claim 9, wherein the adjusting the magnetron sputtering station accordingly comprises:
and when the substrate is placed on the magnetron sputtering machine table, adjusting the placing position of the substrate relative to the lifting unit so as to enable the placing position of the substrate relative to the bearing unit to be within the preset deviation of the standard position.
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Citations (5)
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| CN205205222U (en) * | 2015-12-16 | 2016-05-04 | 昆山国显光电有限公司 | Magnetron sputtering apparatus |
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| CN109817562A (en) * | 2017-11-22 | 2019-05-28 | 东京毅力科创株式会社 | Substrate-placing platform |
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2022
- 2022-02-28 CN CN202210186483.3A patent/CN114318272A/en active Pending
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| CN108138314A (en) * | 2015-09-21 | 2018-06-08 | 应用材料公司 | Substrate carrier and sputtering deposition device and its application method |
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