CN107546146A - A kind of processing jig and wafer manufacture method - Google Patents
A kind of processing jig and wafer manufacture method Download PDFInfo
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- CN107546146A CN107546146A CN201610462607.0A CN201610462607A CN107546146A CN 107546146 A CN107546146 A CN 107546146A CN 201610462607 A CN201610462607 A CN 201610462607A CN 107546146 A CN107546146 A CN 107546146A
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- wafer
- slide glass
- groove
- cover plate
- processing jig
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Abstract
The present invention provides a kind of processing jig and wafer manufacture method, and it is applied to field of semiconductor manufacture.The processing jig includes slide glass and cover plate, and groove is set on the slide glass, and the groove is used to carry wafer, and the cover plate sets wafer for lid, sets opening on the cover plate, described be open is exposed for a part for wafer from opening.Due to blocking for cover plate, plasma only performs etching to a part for wafer, will not etch slide glass, avoids the etching destruction to slide glass.Further, since crystal round fringes and slide glass intersection are covered by cover plate, the spreadability requirement to the intersection metal becomes no longer strict, can simplify corresponding technological process.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of adding for semiconductor crystal wafer dorsal pore etching technics
Tool and gauge and wafer manufacture method.
Background technology
Radio frequency semiconductor device performance can be influenceed by ghost effect in encapsulation process, especially in package lead process
In, the introduced stray inductance of source lead can reduce the gain of radio frequency semiconductor device, so to reduce source lead inductance,
People prepare ground connection dorsal pore generally in radio frequency semiconductor device preparation technology and posted to eliminate introduced larger of bonding wire
Raw inductance, so as to improve the gain performance of radio-frequency devices.
Now widely known radio frequency semiconductor device mainly has silicon substrate radio-frequency devices, GaAs radio-frequency devices and nitridation
Gallium radio-frequency devices.By taking the gallium nitride radio frequency semiconductor device of current research focus as an example, in gallium nitride dorsal pore technique is prepared, need
Three inch silicon carbide substrate wafers are adhered on four inches of slide glasses and carry out operation, prepare hard gold thereon after substrate thinning
Category, and etch mask is formed by photoetching, etching technics, back hole structure is then formed using dry etch process.
Generally, etch mask is prepared on whole four inches of slide glasses (above containing three inch wafers), due to three inches
Wafer and four inches of slide glass intersection steps are too high, simultaneously because in bonding die in the pollution of organic matter used and metal preparation technology
The defects of, more or less to have certain area exposed for the four inches of slide glasses not covered in mask preparation by three inch wafers；This
A little exposed parts are caused to damage in dorsal pore etching technics by the etching of plasma, and load can be caused after multiple technique
Piece is scrapped.To avoid the generation of above mentioned problem, cumbersome operation is carried out to related process in technological process, adds work
The industry time and processing quality can not be completely secured.In addition, hard mask can cause substantial amounts of etch product in dorsal pore etching technics
Process cavity inwall is deposited to, more frequently upkeep operation can be introduced, reduces production efficiency.
The content of the invention
In view of this, the purpose of the embodiment of the present invention is to provide a kind of processing jig and wafer manufacture method, to improve
The problem of above-mentioned.
To achieve these goals, the technical scheme that the embodiment of the present invention uses is as follows：
A kind of processing jig, including slide glass and cover plate, groove is set on the slide glass, the groove is used to carry wafer,
The cover plate sets wafer for lid, sets opening on the cover plate, described be open is exposed for a part for wafer from opening.
Preferably, the groove is analog-U shaped groove, the groove profile include circular arc of the radian no more than π and
Tangent line at two end points of the circular arc.
Preferably, the radian of the circular arc of the groove is between pi/2~π.
Preferably, the slide glass is circular mount, and the center of circle of the slide glass overlaps with the center of circle of the groove arc.
Preferably, the depth of the groove is less than the thickness of wafer to be processed.
Preferably, the groove can use one kind in dry etching, wet etching, depositional mode or machining
Mode or various ways combination are prepared.
Preferably, the opening shape is identical with processed wafer shape, the size of the size of the opening with respect to wafer
It is scaled.
Preferably, the cover plate is fixed on an etching machine pallet.
Present invention also offers a kind of wafer manufacture method, including：
Wafer is fixed in the groove of a slide glass；
Etch mask is prepared in crystal column surface；
Dorsal pore figure is prepared in crystal column surface；
The cover plate lid for having opening using one sets wafer, and a part for the wafer exposes from the opening of the cover plate
Come；
Dorsal pore is prepared in crystal column surface.
Preferably, it is described before the step of crystal column surface prepares etch mask, in addition to step：
The wafer is thinned.
Preferably, described after the step of crystal column surface prepares dorsal pore, methods described also includes step：
The etch mask of wafer is removed, metal is prepared on wafer.
Preferably, the groove profile of the slide glass includes circular arc of the radian no more than π and two ends of the circular arc
Tangent line at point, when the wafer is built in the groove, wafer is supported by the circular arc.
Preferably, the opening shape is identical with processed wafer shape, the size of the size of the opening with respect to wafer
It is scaled.
Processing jig provided by the invention includes cover plate and slide glass.Wafer and slide glass are covered in by the cover plate provided with opening
Surface, only by the opening of cover plate exposed to outer, slide glass is covered wafer by remaining position of cover plate, is performing etching technique
When, cover plate can protect the etching of slide glass not subject plasma, extend the service life of slide glass, save production cost.In addition,
Because crystal round fringes and slide glass intersection are covered by cover plate, the spreadability requirement to the intersection metal becomes no longer strict, can
With the corresponding technological process of simplification.
To enable the above objects, features and advantages of the present invention to become apparent, preferred embodiment cited below particularly, and coordinate
Appended accompanying drawing, is described in detail below.
Brief description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below by embodiment it is required use it is attached
Figure is briefly described, it will be appreciated that the following drawings illustrate only certain embodiments of the present invention, therefore be not construed as pair
The restriction of scope, for those of ordinary skill in the art, on the premise of not paying creative work, can also be according to this
A little accompanying drawings obtain other related accompanying drawings.
Figure 1A is a kind of structural section schematic diagram for processing jig that the embodiment of the present invention is provided.
Figure 1B is a kind of another structural section schematic diagram of processing jig provided by the present invention.
Fig. 2A is a kind of cover plate schematic top plan view for processing jig that the embodiment of the present invention is provided.
Fig. 2 B are a kind of another cover plate schematic top plan views of processing jig provided by the present invention.
Fig. 2 C are a kind of another cover plate schematic top plan views of processing jig provided by the present invention.
Fig. 3 A are a kind of slide glass schematic top plan views for processing jig that the embodiment of the present invention is provided.
Fig. 3 B and 3C are a kind of slide glass left view schematic diagrams for processing jig that the embodiment of the present invention is provided.
Fig. 3 D and 3E are a kind of slide glass front-view schematic diagrams for processing jig that the embodiment of the present invention is provided.
Fig. 4 A are a kind of another slide glass schematic top plan views of processing jig provided by the present invention.
Fig. 4 B and 4C are a kind of another slide glass left view schematic diagrams of processing jig provided by the present invention.
Fig. 4 D and 4E are a kind of another slide glass front-view schematic diagrams of processing jig provided by the present invention.
Fig. 5 is a kind of flow chart for wafer manufacture method that the embodiment of the present invention is provided.
Main element symbol description：Cover plate 110, opening 111, slide glass 210, groove 211, circular arc 212, tangent line 213, edge
214th, wafer 310, hard metal mask 410, etching pallet 510.
Embodiment
Below in conjunction with accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Ground describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.Generally exist
The component of the embodiment of the present invention described and illustrated in accompanying drawing can be configured to arrange and design with a variety of herein.Cause
This, the detailed description of the embodiments of the invention to providing in the accompanying drawings is not intended to limit claimed invention below
Scope, but it is merely representative of the selected embodiment of the present invention.Based on embodiments of the invention, those skilled in the art are not doing
The every other embodiment obtained on the premise of going out creative work, belongs to the scope of protection of the invention.
First embodiment
First embodiment of the invention provides a kind of processing jig.
Figure 1A is referred to, is the structural section schematic diagram of processing jig provided in an embodiment of the present invention.The embodiment of the present invention
The processing jig of offer includes slide glass 210 and cover plate 110.Groove 211 is set on the slide glass 210, for carrying wafer 310；
Opening 111 is set on the cover plate 110.The embodiment of the present invention is not limited the material of slide glass 210 and cover plate 110, such as is carried
Piece 210 can be any one in sapphire sheet, quartz plate, silicon carbide plate, silicon chip, gallium arsenide film or metal disk.Institute
It can be any of ceramic material, quartz material or metal material by surface insulation processing to state cover plate 110.This
Outside, the groove 211 of the slide glass 210 can pass through one in such as dry etching, wet etching, depositional mode or machining
Kind mode or various ways combination are prepared.When being manufactured using dry etching or wet etching mode, can use
Prepared by mask, photoetching, dry etching or wet etching, removes the flows such as mask and is made；When being prepared using depositional mode, lead to
The metal for having thickness required by electro-deposition on the slide glass of respective seed metallic pattern in making is crossed, for example gold, platinum etc. are made.This hair
Bright embodiment is not limited the preparation method of groove 211.
The quantity of opening 111 for the cover plate 110 that the present embodiment provides does not limit, it is only necessary to through the cover plate 110,
For example, referring to Fig. 2A~2C, three kinds of different structures of cover plate 110 are which provided.Because cover plate 110 needs to cover slide glass
210 and wafer 310, to ensure 310 uniform stress of slide glass 210 and wafer, being open 111 is preferably shaped to and the phase of wafer 310
With shape, because wafer 310 is generally circular in cross section or has the circle of trimming, so opening 111 is shaped as circle or has trimming
Circle.To ensure that slide glass 210 is not etched by plasma in dry etching, the portion that slide glass 210 is not covered by wafer 310
Point to be covered by cover plate 110, therefore, 111 diameter of being open is slightly less than the diameter of wafer 310 to be processed, it is preferred that opening
111 diameter is smaller 3~5mm than the diameter of wafer 310 to be processed.The effect of cover plate 110 is in wafer 310 and the knot of slide glass 210
After merging is positioned on etching pallet 510, cover slide glass 210, securing cover plate 110 on etching pallet 510 so that wafer
310 part exposes at the opening 111 of cover plate 110.At this point it is possible to wafer 310 is handled to prepare dorsal pore.It is excellent
Selection of land, the cover plate 110 can be fixed on etching machine pallet by modes such as screw lockings.
Because cover plate 110 covers slide glass 210, leave behind wafer 310 to be processed and expose to come from opening 111, so
When performing etching technique to wafer 310, slide glass 210 will not prevent that slide glass 210 is destroyed by plasma etching.Meanwhile by
Covered in the edge of wafer 310 and the intersection of slide glass 210 by cover plate 110, the spreadability requirement to the intersection metal becomes no longer
Strictly, corresponding technological process can be simplified.The same reason as above, Figure 1B provides another structural section of processing jig
Schematic diagram, wherein it is possible to without preparing hard metal mask 410 on slide glass in addition to wafer 310 in slide glass 210.
Fig. 3 A and 4A are refer to, in embodiments of the present invention, being shaped as groove 211 is analog-U shaped.It is analog-U shaped to refer to by one
The shape that tangent line 213 at two end points of circular arc 212 and the circular arc no more than π forms.It is provided in an embodiment of the present invention
Slide glass 210 it is conveniently of circular shape, the center of circle of slide glass 210 overlaps with the center of circle of the circular arc 212 of groove 211, the two of groove 211
Bar tangent line 213 extends and surrounds the part edge 214 of slide glass 210.Be arranged such, facilitate the combination of wafer 310 and slide glass 210 with
Separation, such as, when wafer 310 is adhered on slide glass 210 using adhesive, by edge 214, it can flatly promote crystalline substance
Circle 310 enters groove 211, wafer 310 is moved to the center of slide glass 210, until being supported by the circular arc 212 of groove 211.Work as warp
Cross after a series of technique, can flatly promote wafer 310 to depart from from edge 214.
Fig. 3 B~3E and 4B~4E are refer to, to cause slide glass 210 to be easy to carry wafer 310, it is preferable that the slide glass 210
Diameter it is at least bigger 20mm than the diameter of wafer 310.It is readily appreciated that, in order to ensure that wafer 310 can be by the circular arc of groove 211
212 support completely, and the circular diameter belonging to the circular arc 212 of groove 211 needs to be more than the wafer 310 being positioned in groove 211
Diameter.Preferably, the diameter of wafer 310 of the circular diameter belonging to the circular arc 212 of the groove 211 than being processed it is big by 0~
3mm.It should be understood that in order to ensure wafer 310 by the accurate positioning of the circular arc 212 of groove 211 and support, groove 211
The radian of circular arc 212 need to be defined within the specific limits, it is preferable that the radian of the circular arc 212 of groove 211 is between pi/2~π.
Meanwhile the depth of the groove 211 is d/3~2d/3, wherein d by processing wafer 310 thickness, such as when wafer 310 is thinned
When thickness afterwards is 100 μm, then the depth of the analog-U shaped groove 211 is in 33~66 μ ms.
Second embodiment
Second embodiment of the invention provides a kind of wafer manufacture method.
Referring to Fig. 5, it is the flow chart for the wafer manufacture method that the present embodiment provides.The wafer manufacture that the present embodiment provides
Method comprises the following steps：
S201：Wafer is built in the groove of a slide glass.
The slide glass that the slide glass can be provided by first embodiment of the invention, slide glass and wafer are circle, wherein slide glass
Diameter it is bigger at least 20mm than brilliant diameter of a circle, for example when a diameter of 3 inches of wafer, the diameter of slide glass can be 4 inches
Or the size more than 4 inches.With a diameter of 3 inches of wafer, exemplified by the size of slide glass is 4 inches, wafer can be by viscous
The groove of mixture and slide glass bonds, and promotes wafer, wafer is supported by the side wall of groove.
S202：Reduction processing is carried out to wafer.
After being glued wafer and slide glass using adhesive, wafer is before dorsal pore etching technics is carried out, it is necessary to carry out that work is thinned
Skill, it can typically use corase grind, fine grinding and the technique of polishing.Furthermore, it is necessary to about 100um can be thinned to by making the wafer of dorsal pore.
S203：Etch mask is prepared in crystal column surface.
Wafer is completed to etch hard mask metal layer, it is necessary to prepare after being thinned, and can prepare quarter in slide glass and crystal column surface
Hard mask metal layer is lost, the hard mask metal layer of etching can also be prepared only on wafer, the embodiment of the present invention is not limited this.
The hard mask metal used can be aluminium (Al), nickel (Ni), copper (Cu), tin indium oxide (ITO) etc..Prepare the hard mask gold of the etching
The mode for belonging to layer can be physical sputtering, reactive sputtering, thermal evaporation deposition, electron-beam evaporation, pulsed laser deposition, deposition
Seed metal-electro-deposition etc..
S204：Dorsal pore figure is prepared in crystal column surface.
After the completion of etching hard mask metal layer preparation, the side of photoetching-dry etching or photoetching-wet etching can be used
Formula prepares dorsal pore etch mask figure, and dry etching carborundum is carried out after being removed photoresist by wet method.
S205：The cover plate lid for having opening using one sets wafer, and a part for the wafer is sudden and violent from the opening of the cover plate
Expose.
The cover plate can be the cover plate that first embodiment of the invention is provided, and the slide glass for being stained with wafer is placed on etching
In the film trap of machine pallet, cover plate is placed on above etching machine pallet and wafer, the opening of wafer only to be processed from cover plate
It is exposed, that is to say, that a part for wafer is exposed from opening.Finally cover plate and slide glass are tightened in etching with screw
On machine pallet.
S206：Dorsal pore is prepared in crystal column surface.
The slide glass fixed, wafer, cover plate and etching machine pallet are put into plasma etching machine cavity and carry out dry method
Etch to prepare dorsal pore.Device therefor can be ICP (Inductively Coupled Plasma, inductive couple plasma
Body) etching machine or ECR (Electron Cyclotron Resonance, electron cyclotron resonace) etching machine.
In etching cavity, due to blocking for cover plate, plasma only performs etching to a part for wafer, will not etch load
Piece, avoid the etching destruction to slide glass.Because crystal round fringes and slide glass intersection are covered by cover plate, to the intersection metal
Spreadability requirement become no longer strict, corresponding technological process can be simplified.
S207：The etch mask of wafer is removed, metal is prepared on wafer.
After the completion of wafer etches in etching cavity, wafer is taken out cavity and removes the hard mask metal layer of etching, is connect down
To use the techniques such as sputtering, plating, photoetching, corrosion to make metal on the surface of wafer, the electricity on the relative surface of wafer two is realized
Connection.
Processing jig and wafer manufacture method provided in an embodiment of the present invention, wafer is covered in by the cover plate provided with opening
With the surface of slide glass, only by the opening of cover plate outside, slide glass is covered a part for wafer by remaining position of cover plate,
When performing etching technique, cover plate can protect the etching of slide glass not subject plasma, extend the service life of slide glass, save life
Produce cost.Further, since crystal round fringes and slide glass intersection are covered by cover plate, the spreadability requirement to the intersection metal becomes
It is no longer strict, corresponding technological process can be simplified.
The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited thereto, any
Those familiar with the art the invention discloses technical scope in, change or replacement can be readily occurred in, should all be contained
Cover within protection scope of the present invention.Therefore, protection scope of the present invention described should be defined by scope of the claims.
Claims (13)
1. a kind of processing jig, it is characterised in that including slide glass and cover plate, groove is set, the groove is used on the slide glass
Wafer is carried, the cover plate is used for lid and sets wafer, sets and is open on the cover plate, and the part being open for wafer is from opening
Mouth exposes.
2. processing jig according to claim 1, it is characterised in that the groove is analog-U shaped groove, the groove profile
Tangent line at two end points including circular arc of the radian no more than π and the circular arc.
3. processing jig according to claim 2, it is characterised in that the radian of the circular arc of the groove pi/2~π it
Between.
4. processing jig according to claim 2, it is characterised in that the slide glass is circular mount, the circle of the slide glass
The heart overlaps with the center of circle of the groove arc.
5. processing jig according to claim 1, it is characterised in that the depth of the groove is less than the thickness of wafer.
6. processing jig according to claim 1, it is characterised in that the groove uses dry etching, wet etching, sunk
Product mode either be machined in a kind of mode or various ways combine be prepared.
7. processing jig according to claim 1, it is characterised in that the opening shape and processed wafer shape phase
Together, dimensions scale downward of the size of the opening with respect to wafer.
8. processing jig according to claim 1, it is characterised in that the cover plate is fixed on an etching machine pallet.
A kind of 9. wafer manufacture method, it is characterised in that including：
Wafer is fixed in the groove of a slide glass；
Etch mask is prepared in crystal column surface；
Dorsal pore figure is prepared in crystal column surface；
The cover plate lid for having opening using one sets wafer, and a part for the wafer is exposed from the opening of the cover plate；
Dorsal pore is prepared in crystal column surface.
10. wafer manufacture method according to claim 9, it is characterised in that described to prepare etch mask in crystal column surface
The step of before, in addition to step：
The wafer is thinned.
11. wafer manufacture method according to claim 9, it is characterised in that described to prepare dorsal pore in crystal column surface
After step, in addition to step：
The etch mask of wafer is removed, metal is prepared on wafer.
12. wafer manufacture method according to claim 9, it is characterised in that the groove profile of the slide glass includes one
Tangent line at two end points of circular arc of the radian no more than π and the circular arc, when the wafer is built in the groove, wafer quilt
The circular arc supports.
13. wafer manufacture method according to claim 9, it is characterised in that the opening shape is with processing wafer shape
Shape is identical, the dimensions scale downward of the size of the opening with respect to wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610462607.0A CN107546146A (en) | 2016-06-23 | 2016-06-23 | A kind of processing jig and wafer manufacture method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610462607.0A CN107546146A (en) | 2016-06-23 | 2016-06-23 | A kind of processing jig and wafer manufacture method |
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| CN107546146A true CN107546146A (en) | 2018-01-05 |
Family
ID=60960645
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610462607.0A Pending CN107546146A (en) | 2016-06-23 | 2016-06-23 | A kind of processing jig and wafer manufacture method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231633A (en) * | 2018-01-31 | 2018-06-29 | 江苏长电科技股份有限公司 | For the etching protection jig of lead frame and the engraving method of lead frame |
| CN114672780A (en) * | 2022-03-22 | 2022-06-28 | 颀中科技（苏州）有限公司 | Wafer tray and wafer sputtering equipment |
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| JPH0885875A (en) * | 1994-09-19 | 1996-04-02 | Hitachi Ltd | Plasma treating device |
| JP2000068185A (en) * | 1998-08-20 | 2000-03-03 | Sii Quartz Techno Ltd | Method and equipment for applying photo resist on wafer, and component therefor |
| JP2010098010A (en) * | 2008-10-14 | 2010-04-30 | Ulvac Japan Ltd | Etching equipment and etching method |
| JP2010098011A (en) * | 2008-10-14 | 2010-04-30 | Ulvac Japan Ltd | Substrate tray used in plasma etching equipment, etching equipment, and etching method |
| JP2010098012A (en) * | 2008-10-14 | 2010-04-30 | Ulvac Japan Ltd | Etching equipment and etching method |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0885875A (en) * | 1994-09-19 | 1996-04-02 | Hitachi Ltd | Plasma treating device |
| JP2000068185A (en) * | 1998-08-20 | 2000-03-03 | Sii Quartz Techno Ltd | Method and equipment for applying photo resist on wafer, and component therefor |
| JP2010098010A (en) * | 2008-10-14 | 2010-04-30 | Ulvac Japan Ltd | Etching equipment and etching method |
| JP2010098011A (en) * | 2008-10-14 | 2010-04-30 | Ulvac Japan Ltd | Substrate tray used in plasma etching equipment, etching equipment, and etching method |
| JP2010098012A (en) * | 2008-10-14 | 2010-04-30 | Ulvac Japan Ltd | Etching equipment and etching method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231633A (en) * | 2018-01-31 | 2018-06-29 | 江苏长电科技股份有限公司 | For the etching protection jig of lead frame and the engraving method of lead frame |
| CN114672780A (en) * | 2022-03-22 | 2022-06-28 | 颀中科技（苏州）有限公司 | Wafer tray and wafer sputtering equipment |
| CN114672780B (en) * | 2022-03-22 | 2023-09-19 | 颀中科技（苏州）有限公司 | Wafer tray and wafer sputtering equipment |
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