CN114672776B - Target binding method for hollow backboard - Google Patents
Target binding method for hollow backboard Download PDFInfo
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- CN114672776B CN114672776B CN202210287868.9A CN202210287868A CN114672776B CN 114672776 B CN114672776 B CN 114672776B CN 202210287868 A CN202210287868 A CN 202210287868A CN 114672776 B CN114672776 B CN 114672776B
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- binding
- target
- backboard
- back plate
- cushion block
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to the technical field of metal target preparation, and discloses a target binding method of a hollow backboard, which comprises the following steps: manufacturing a cushion block matched with the backboard; placing the cushion block and the target blank on a heating table, and sleeving the back plate on the cushion block; opening the heating table to heat, and heating the back plate and the target blank to a preset temperature; binding the target blank and the backboard on the heating table; and cooling the target after binding to room temperature, and detecting the target after binding. The method improves the efficiency of temperature transmission, can improve the uniformity of the temperature of each part of the binding surface of the backboard, and reduces the occurrence of empty drums, thereby avoiding the multiple binding-unbinding and rebinding procedures after the binding failure of the target, reducing the use of indium solder and the labor cost, and greatly saving the economic cost; effectively reduces the oxidation of the indium solder and obviously improves the welding rate and the welding strength.
Description
Technical Field
The invention relates to the technical field of metal target preparation, in particular to a target binding method of a hollow backboard.
Background
The target is generally used for magnetron sputtering coating, and the target and the backboard are bound for preventing the target from being cracked, arched and deformed due to uneven heating in the sputtering process. In the binding process of the target material, if the temperature change of the edge and the central part of the target blank is large, the binding layer can generate hollowness, so that the welding rate is low and the welding strength is low. The empty drum in the sputtering process can cause unstable sputtering current and generate discharge phenomenon, and the machine is stopped when the machine is light, and the machine is vacuumized again, thereby wasting time; the weight causes equipment damage. Meanwhile, the local temperature of the target is too high in the sputtering process, so that the target is unbound and falls off, equipment is damaged, and the production line is stopped. Therefore, the structure of the backboard is required to be processed and modified to quickly dissipate heat in a water cooling mode and the like aiming at targets with different requirements, so that local heating non-uniformity is reduced.
At present, the back plate structure of the target in industry is mainly in a round cake shape, different air hole channels are arranged at the bottom and the periphery for cooling water to pass through, but different magnetron sputtering machines are adopted by manufacturers, and the back plate is in a hollow structure, so that in the process of binding the hollow back plate by adopting a conventional target binding method, the heat is absorbed by a large space in the hollow back plate, the unstable temperature difference between the edge and the center of the upper surface of the target is easily caused, the uneven heating of welding materials and the too much oxidation layer in the binding process are easily caused, and the welding rate and the welding strength are too low; in the cooling process, the cooling speed of the central part and the cooling speed of the edge part are far apart, and the blank drum is very easy to appear, so that the binding failure is caused.
Disclosure of Invention
The purpose of the invention is that: the target binding method of the hollow backboard is provided, the temperature transmission efficiency is improved, the temperature uniformity of each part of the binding surface of the backboard can be improved, and the occurrence of empty drums is reduced, so that the multiple binding-unbinding and rebinding procedures after the target binding failure are avoided, the use of indium solder and the labor cost are reduced, and the economic cost is greatly saved; effectively reduces the oxidation of the indium solder and obviously improves the welding rate and the welding strength.
In order to achieve the above object, the present invention provides a target binding method for a hollow back plate, comprising the steps of:
manufacturing a cushion block matched with the backboard;
placing the cushion block and the target blank on a heating table, and sleeving the back plate on the cushion block;
opening the heating table to heat, and heating the back plate and the target blank to a preset temperature;
binding the target blank and the backboard on the heating table;
and cooling the target after binding to room temperature, and detecting the target after binding.
Compared with the prior art, the target binding method of the hollow backboard has the beneficial effects that: in the heating and binding process, the cushion block is used for filling the hollow part of the backboard, so that the temperature transmission efficiency is improved, the temperature uniformity of each part of the binding surface of the backboard can be improved, and the occurrence of hollowness is reduced, thereby avoiding the multiple unbinding and rebinding procedures after the binding failure of the target material, reducing the use and labor cost of indium solder, and greatly saving the economic cost; effectively reduces the oxidation of the indium solder and obviously improves the welding rate and the welding strength.
According to the target binding method for the hollow backboard, disclosed by the embodiment of the invention, before the backboard and the target blank are sleeved on the cushion block, the bottom surface, the side surface and the air holes of the backboard and the sputtering surface of the target blank are required to be sealed by using a high-temperature-resistant adhesive tape.
The target binding method for the hollow backboard according to the embodiment of the invention, when the backboard and the target blank are heated to the preset temperature, further comprises the following steps:
heating the heating table to a first preset temperature;
carrying out first heat preservation;
heating the heating table to a second preset temperature;
and carrying out heat preservation for the second time.
According to the target binding method for the hollow backboard, the first preset temperature is 144-155 ℃, the second preset temperature is 190-240 ℃, the first heat preservation time is 25-35 minutes, and the second heat preservation time is 20-35 minutes.
According to the target binding method for the hollow backboard, before binding the target blank and the backboard, the temperature difference between the upper end face of the backboard and the heating table is 25-35 ℃.
The target binding method of the hollow backboard in the embodiment of the invention further comprises the following steps when the binding of the target blank and the backboard is performed on the heating table:
pouring indium solder into the surface to be bound of the target blank and the backboard;
performing infiltration coating on the indium solder by using an ultrasonic coater;
and binding the backing plate with the target blank after the copper wires are put in the backing plate.
According to the target binding method for the hollow backboard, after the target blank and the backboard are bound on the heating table, the temperature of the heating table is kept for 20-60 minutes, and the indium solder is kept warm.
According to the target binding method for the hollow backboard, after the heat preservation of the indium solder is completed, the heating function of the heating table is closed, when the heating table is cooled to 130-150 ℃, indium scraps on the surface of the target after binding are removed, and finally, the temperature is naturally cooled to the room temperature.
According to the target binding method of the hollow backboard, detection of the bound target comprises detection of flatness, welding rate and welding strength.
According to the target binding method for the hollow backboard, when the backboard is made of oxygen-free copper, the cushion block is made of aluminum alloy or oxygen-free copper; when the backboard is made of aluminum alloy, the cushion block is made of aluminum alloy.
According to the target binding method for the hollow backboard, when materials of the backboard and the cushion block are different, the gap between the cushion block and the backboard in the horizontal direction is 0.5mm-1mm, and the gap between the cushion block and the backboard in the vertical direction is 0.4mm-0.6mm.
According to the target binding method for the hollow backboard, when the backboard and the cushion block are made of the same material, the joint gaps between the cushion block and the backboard in the horizontal and vertical directions are 0.4mm-0.6mm.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
Fig. 1 is a schematic structural diagram of a target in binding in a target binding method of a hollow back plate according to an embodiment of the present invention;
FIG. 2 is a graph showing the detection result of C-scan on the welding rate after the cushion block is used for binding in the target binding method of the hollow backboard according to the embodiment of the invention;
FIG. 3 is a graph showing the results of C-scan versus weld ratio detection after pad binding without the target binding method for a hollow back plate according to an embodiment of the present invention. .
In the figure, 1, a target blank; 2. a back plate; 3. indium solder; 4. and (5) cushion blocks.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
In the description of the present invention, it should be understood that references to orientation descriptions such as upper, lower, front, rear, left, right, etc. are based on the orientation or positional relationship shown in the drawings, are merely for convenience of description of the present invention and to simplify the description, and do not indicate or imply that the apparatus or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the present invention.
In the description of the present invention, a number means one or more, a number means two or more, and greater than, less than, exceeding, etc. are understood to not include the present number, and above, below, within, etc. are understood to include the present number. The description of the first and second is for the purpose of distinguishing between technical features only and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present invention, unless explicitly defined otherwise, terms such as arrangement, installation, connection, etc. should be construed broadly and the specific meaning of the terms in the present invention can be reasonably determined by a person skilled in the art in combination with the specific contents of the technical scheme.
As shown in fig. 1, the target binding method of the hollow backboard according to the preferred embodiment of the invention comprises the following steps:
s1: manufacturing a cushion block 4 matched with the backboard 2;
s2: placing the cushion block 4 and the target blank 1 on a heating table, and sleeving the backboard 2 on the cushion block 4;
s3: opening a heating table to heat, and heating the backboard 2 and the target blank 1 to a preset temperature;
s4: binding the target blank 1 and the backboard 2 on a heating table;
s5: and cooling the bound target to room temperature, and detecting the bound target.
In the embodiment, in the heating and binding process, the cushion block 4 is used for filling the hollow part of the backboard 2, so that the temperature transmission efficiency is improved, the uniformity of the temperature of each part of the binding surface of the backboard 2 can be improved, and the occurrence of hollowness is reduced, thereby avoiding multiple unbinding and rebinding procedures after the target binding failure, reducing the use and labor cost of the indium solder 3 and greatly saving the economic cost; effectively reduces the oxidation of the indium solder 3 and obviously improves the welding rate and the welding strength.
In some embodiments of the present invention, in S1, the back plate 2 of the hollow structure is bowl-shaped, cylindrical, regular polyhedral, irregular polyhedral, etc., and the cushion block 4 is also disposed in bowl-shaped, cylindrical, regular polyhedral, irregular polyhedral, etc. shape along with the internal structure of the back plate 2. Further, the size of the cushion block 4 is 300mm-450mm in diameter and 50mm-60mm in height.
In some embodiments of the present invention, before the back plate 2 is sleeved on the cushion block 4, the bottom surface and the side surface of the back plate 2 need to be sealed by using high temperature resistant adhesive tape, so that solder is prevented from flowing onto other end surfaces which do not need to be bound, and particularly, the air holes are sealed, so that the solder is prevented from flowing into the air holes of the back plate 2 and being difficult to clean in the binding process. The sputtering surface of the target blank 1 also needs to be sealed with a high temperature resistant tape.
In some embodiments of the present invention, at S3, the following steps are further included:
s31: heating the heating table to a first preset temperature of 144-155 ℃;
s32: performing primary heat preservation, wherein the duration of the primary heat preservation is 25-35 minutes;
s33: heating the heating table to a second preset temperature, wherein the second preset temperature is 190-240 ℃;
s34: and carrying out the second heat preservation, wherein the duration of the second heat preservation is 20-35 minutes.
In some embodiments of the invention, the temperature difference between the upper end surface of the back plate 2 and the heating table is 25-35 ℃ before S4.
In some embodiments of the present invention, in S4, the method further comprises the steps of:
s41: pouring indium solder 3 into the surface to be bound of the target blank 1 and the backboard 2;
s42: performing immersion coating on the indium solder 3 by using an ultrasonic coater;
s43: after copper wires are put in the back plate 2, binding with the target blank 1 is carried out.
In some embodiments of the present invention, after S4, the heating table is kept at the temperature for 20-60 minutes, and the heat preservation of the indium solder 3 is performed, so that the binding effect of the target blank 1 and the backing plate 2 is ensured.
In some embodiments of the present invention, in S5, the heating function of the heating table is turned off, and when the heating table is cooled to 130-150 ℃, the indium scraps on the surface of the target material after binding are removed, and finally the cooling is naturally performed to room temperature, so that the indium scraps after complete cooling are prevented from condensing on the surface of the target material, and the cleaning is difficult.
In some embodiments of the invention, the central part of the backboard 2 is changed from air conduction heat dissipation to metal conduction heat dissipation, the cooling time is reduced from 200-240 minutes to 90-110 minutes after binding is completed, the time is shortened by at least 1 time, the time cost is obviously saved, the production efficiency is improved, and the economic benefit is obtained.
In some embodiments of the invention, the detection of the bound target material comprises the detection of flatness, welding rate and welding strength, so that the quality of the target material is ensured, and inferior products are prevented.
In some embodiments of the present invention, when the material of the back plate 2 is oxygen-free copper, the material of the cushion block 4 is aluminum alloy or oxygen-free copper; when the material of the back plate 2 is aluminum alloy, the material of the cushion block 4 is aluminum alloy.
In some embodiments of the present invention, when the materials of the back plate 2 and the cushion block 4 are different, the gap between the cushion block 4 and the back plate 2 in the horizontal direction is 0.5mm-1mm, and the gap between the cushion block 4 and the back plate 2 in the vertical direction is 0.4mm-0.6mm.
In some embodiments of the present invention, when the materials of the back plate 2 and the cushion block 4 are the same, the seam gap between the cushion block 4 and the back plate 2 in the horizontal and vertical directions is 0.4mm-0.6mm.
Further, as a preferred embodiment of the present invention, the method comprises the steps of:
s01: the cushion block 4 is manufactured according to the shape of the backboard 2, the size of the cushion block 4 is generally 300mm-450mm in diameter and 50mm-60mm in height; the cushion block 4 is made of oxygen-free copper or 6061 aluminum alloy;
s02: the sputtering surface of the target blank 1 and the bottom and the side surface of the copper backboard 2 are tightly adhered by using high-temperature adhesive tapes;
s03: placing the cushion block 4 and the target blank 1 on a heating table, and simultaneously covering the back plate 2 on the cushion block 4;
s04: heating is started, the temperature is firstly increased to 145-155 ℃, the temperature is kept for 30 minutes, then the temperature is increased to 190-240 ℃, and the temperature is kept for 20-35 minutes;
s05: the temperature difference between the surface temperature of the backboard 2 and the surface of the heating table is 25-35 ℃, the indium solder 3 is poured into the surfaces of the target blank 1 and the backboard 2, the surface to be bound is soaked and coated by an ultrasonic coater, and the copper wires are placed on the backboard 2 and then bound;
s06: after binding is finished, keeping the temperature of the heating table for 20-60min, closing heating, removing indium scraps on the surface of the target material when the heating table is cooled to 130-150 ℃, and naturally cooling to room temperature;
s07: CT scanning and flatness detection are carried out on the target after binding, and welding rate, welding strength and the like are detected.
For further understanding of the present invention, the following comparative analysis is performed in connection with an example of the binding method using the hollow back plate 2 of the present invention and a comparative example of the binding method not using the hollow back plate 2 of the present invention, and the scope of the present invention is not limited by the following examples.
It should be noted that, the heating temperature of the binding method of the embodiment is 5-15 ℃ higher than the binding temperature of the non-hollow structure backboard 2, and the heating time is 10-20min longer than the binding temperature of the non-hollow structure backboard 2;
example 1:
the metal target used in the embodiment is 99.999% titanium, the backboard 2 is oxygen-free copper, the cushion block 4 is made of oxygen-free copper, the size of the cushion block 4 is 319.5mm in diameter and 55mm in height, and the heating temperature is 210 ℃;
comparative example 1:
comparative example 1 differs from example 1 in that there is no pad 4, heating temperature 235 ℃;
example 2:
the metal target used in the embodiment is 99.999% titanium, the backboard 2 is oxygen-free copper, the cushion block 4 is made of 6061 aluminum alloy, the size of the cushion block 4 is 319mm in diameter, the height is 55mm, and the heating temperature is 215 ℃;
comparative example 2:
comparative example 2 differs from example 2 in that the oxygen-free copper back plate 2 is a non-hollow structure, and the heating temperature is 200 ℃;
example 3:
the metal target used in the embodiment is an aluminum copper target, the backboard 2 is oxygen-free copper, the cushion block 4 is made of oxygen-free copper, the size of the cushion block 4 is 319.5mm in diameter and 55mm in height, and the heating temperature is 190 ℃;
comparative example 3:
comparative example 3 differs from example 3 in that there is no pad 4, heating temperature 220 ℃;
example 4:
the target used in the embodiment is 99.999% aluminum, the backboard 2 is 6061 aluminum alloy, the cushion block 4 is 6061 aluminum alloy, the diameter of the cushion block 4 is 319.5mm, the height is 55mm, and the heating temperature is 200 ℃;
comparative example 4:
comparative example 4 differs from example 4 in that there is no pad 4, heating temperature is 230 ℃;
comparative example 5:
comparative example 5 differs from example 4 in that the aluminum alloy back plate 2 is a non-hollow structure and the heating temperature is 210 ℃.
The effects of the above examples and comparative examples to be detected and compared are as follows:
test sample: the metal targets bound in examples 1-4 and comparative examples 1-5;
binding time test: the time from the heating table to the target binding ending and cooling to the room temperature;
flatness test: detecting flatness of the bound sputtering surface of the target material and the bottom of the backboard 2 by using a feeler gauge;
and (3) welding rate test: c-scan scanning is carried out on the bound metal target material to measure the welding rate;
rebinding rate test: the target material is arched and deformed after binding or the welding rate is lower than 90 percent, and the probability of binding after unbinding is needed;
grain size difference: a metal target (aluminum, aluminum copper) with a melting point lower than 800 ℃ and a grain size difference before and after binding;
the results of the comparison of the above examples and comparative examples are shown in table 1, fig. 2 and fig. 3:
table 1 sample testing of bound targets of examples 1-4 and comparative examples 1-5
According to the results of table 1, the binding time, flatness, welding rate, rebinding rate and grain size difference values of the examples are compared with those of the comparative examples, and the method provided by the invention is used for remarkably reducing the preparation time cost of the metal target material by aiming at the hollow structure metal target material binding method, improving the flatness of the target material and the welding rate after binding, reducing the unbinding and rebinding times, and greatly saving the economic cost compared with the unbinding backboard 2.
For the target material with low melting point (less than 800 ℃), the grain size difference of the target material before and after binding of the cushion block 4 is not added, but the temperature required by binding of the backboard 2 can be reached in a short time at a low heating temperature after the cushion block 4 is added, the grain size difference of the product before and after binding is 1-5um, the product quality is obviously improved, and the economic benefit is improved.
In summary, the embodiment of the invention provides a binding method of a hollow backboard 2, which adopts a cushion block 4 as the filling of the hollow part of the backboard 2, improves the temperature transmission efficiency, can improve the uniformity of the temperature of each part of the binding surface of the backboard 2, and reduces the occurrence of empty drums, thereby avoiding the multiple unbinding and rebinding procedures after the binding failure of the target, reducing the use and labor cost of indium solder 3 and greatly saving the economic cost; the oxidation of the indium solder 3 is effectively reduced, and the welding rate and the welding strength are obviously improved; the central part of the backboard 2 is changed from air conduction heat dissipation to metal conduction heat dissipation, the time of at least 1 time is shortened, the time cost is obviously saved, and the production efficiency is improved.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and substitutions can be made by those skilled in the art without departing from the technical principles of the present invention, and these modifications and substitutions should also be considered as being within the scope of the present invention.
Claims (10)
1. The target binding method of the hollow backboard is characterized by comprising the following steps of:
manufacturing a cushion block matched with the backboard, wherein the cushion block and the backboard are made of oxygen-free copper or aluminum alloy;
placing the cushion block and the target blank on a heating table, and sleeving the back plate on the cushion block;
opening the heating table to heat, and heating the back plate and the target blank to a preset temperature;
binding the target blank and the backboard on the heating table, wherein the adopted binding material is indium solder;
and cooling the target after binding to room temperature, and detecting the target after binding.
2. The method for binding targets of a hollow back plate according to claim 1, wherein: before the back plate and the target blank are sleeved on the cushion block, high-temperature-resistant adhesive tapes are needed to seal the bottom surface, the side surface and the air holes of the back plate and the sputtering surface of the target blank.
3. The method of claim 1, further comprising the step of, when the backing plate and the target blank are heated to a predetermined temperature:
heating the heating table to a first preset temperature;
carrying out first heat preservation;
heating the heating table to a second preset temperature;
and carrying out heat preservation for the second time.
4. A method of target binding for a hollow back plate according to claim 3, wherein: the first preset temperature is 144-155 ℃, the second preset temperature is 190-240 ℃, the first heat preservation time is 25-35 minutes, and the second heat preservation time is 20-35 minutes.
5. The method of claim 4, further comprising the steps of, when the target blank and the backing plate are bonded to each other on the heating table:
pouring indium solder into the surface to be bound of the target blank and the backboard;
performing infiltration coating on the indium solder by using an ultrasonic coater;
and binding the backing plate with the target blank after the copper wires are put in the backing plate.
6. The method for binding a target material of a hollow back plate according to claim 5, wherein: and after the target blank and the backboard are bound on the heating table, the temperature of the heating table is kept for 20-60 minutes, and the heat preservation of the indium solder is carried out.
7. The method for binding a target material of a hollow back plate according to claim 6, wherein: after the heat preservation of the indium solder is completed, the heating function of the heating table is closed, when the heating table is cooled to 130-150 ℃, indium scraps on the surface of the target material after binding are removed, and finally, the target material is naturally cooled to room temperature.
8. The method for binding targets of a hollow back plate according to claim 1, wherein: when the backboard is made of oxygen-free copper, the cushion block is made of aluminum alloy or oxygen-free copper; when the backboard is made of aluminum alloy, the cushion block is made of aluminum alloy.
9. The method for binding targets of a hollow back plate according to claim 8, wherein: when the materials of the back plate and the cushion block are different, the gap between the cushion block and the back plate in the horizontal direction is 0.5mm-1mm, and the gap between the cushion block and the back plate in the vertical direction is 0.4mm-0.6mm.
10. The method for binding targets of a hollow back plate according to claim 8, wherein: when the materials of the back plate and the cushion block are the same, the joint gaps between the cushion block and the back plate in the horizontal and vertical directions are 0.4mm-0.6mm.
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| CN202210287868.9A CN114672776B (en) | 2022-03-16 | 2022-03-16 | Target binding method for hollow backboard |
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| CN202210287868.9A CN114672776B (en) | 2022-03-16 | 2022-03-16 | Target binding method for hollow backboard |
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