CN114665695B - 一种抑制SiC MOSFET负向串扰的电路 - Google Patents
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- H—ELECTRICITY
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Abstract
本发明提出一种抑制SiC MOSFET负向串扰的电路,该抑制电路包括:电阻R,电容C,二极管D;本发明针对负向串扰提出解决方案,具有电路结构简单,易于实现,节约成本,不影响SiC MOSFET开关速度,负向串扰抑制效果明显等优点。
Description
技术领域
本发明属于宽禁带器件驱动电路,具体为一种抑制SiC MOSFET负向串扰的电路。
背景技术
SiC器件由于开关速度高,其漏源极电压变化率很高,在应用于互补导通的桥臂时,同一桥臂的功率器件高频开关时对另一个处于关断状态的器件的栅源极容易引入干扰电压。
在SiC器件的驱动回路中,抑制串扰的方法主要包括直接在GS两端并接一个相对于Cgs较大的电容,但会减缓SiC器件的开通关断速度,增加驱动电路的损耗;多电平驱动电路,在驱动回路中增加了一个二极管与低功耗MOSFET,当出现负串扰电压时,使用零栅极电压关断SiC MOSFET,但增加的MOSFET不仅需要额外的驱动电路,在逻辑控制方面也比较复杂。
发明内容
发明目的:针对上述现有技术,本发明提供一种抑制SiC MOSFET负向串扰的电路。在不影响器件开关速度的前提下,保证将负向串扰产生的电压尖峰抑制在器件安全工作区间内。本电路具有电路结构简单,节约成本,抑制效果显著等优点。
技术方案:一种抑制SiC MOSFET负向串扰的电路,所述电路包括SiC MOSFET上桥臂和SiC MOSFET下桥臂,在每个桥臂中都包括基本驱动电路和串扰抑制电路。
优选的,所述上桥臂的基本驱动电路包括供电电压源V1H、供电电压源V2H、开关管S1H、开关管S2H、开通栅极电阻Ron_H、关断栅极电阻Roff_H;所述供电电压源V1H的正极与所述开关管S1H的漏极相连,供电电压源V1H的负极与SiC MOSFET M1的源极相连,所述的开关管S1H的源极与开通栅极电阻Ron_H的一端相连,所述开通栅极电阻Ron_H的另一端与SiC MOSFET M1的栅极以及关断栅极电阻Roff_H的一端相连;供电电压源V2H的负极与开关管S2H的源极相连,供电电压源V2H的正极与SiC MOSFET M1的源极以及供电电压源V1H的负极相连,开关管S2H的漏极与关断栅极电阻Roff_H的另一端相连;
所述下桥臂的基本驱动电路包括供电电压源V1L、供电电压源V2L、开关管S1L、开关管S2L、开通栅极电阻Ron_L、关断栅极电阻Roff_L;所述供电电压源V1L的正极与所述开关管S1L的漏极相连,供电电压源V1L的负极与SiC MOSFET M2的源极相连,所述的开关管S1L的源极与开通栅极电阻Ron_L的一端相连,所述开通栅极电阻Ron_L的另一端与SiC MOSFET M2的栅极以及关断栅极电阻Roff_L的一端相连;供电电压源V2L的负极与开关管S2L的源极相连,供电电压源V2L的正极与SiC MOSFET M2的源极以及供电电压源V1L的负极相连,开关管S2L的漏极与关断栅极电阻Roff_L的另一端相连;
优选的,所述上桥臂的串扰抑制电路包括电阻RH、电容CH、二极管DH;其中所述电阻RH与所述电容CH并联后的一端与所述二极管DH阴极串联,所述电阻RH与所述电容CH并联后的另一端与SiC MOSFET M1的栅极相连,所述二极管DH阳极与SiC MOSFET M1的源极相连;
所述下桥臂的串扰抑制电路包括电阻RL、电容CL、二极管DL;其中所述电阻RL与所述电容CL并联后的一端与所述二极管DL阴极串联,所述电阻RL与所述电容CL并联后的另一端与SiC MOSFET M2的栅极相连,所述二极管DL阳极与SiC MOSFET M2的源极相连;
优选的,电容CH>>Cgs_H,电阻RH>>Roff_H。
优选的,所述电容CH大于Cgs_H,电阻RH大于Roff_H,其中Cgs_H为SiC MOSFET M1的寄生电容;
所述电容CL大于Cgs_L,电阻RL大于 Roff_L,其中Cgs_L为SiC MOSFET M2的寄生电容。
优选的,所述电容CH的大小为寄生电容Cgs_H的10-100倍;所述电容CL的大小为寄生电容Cgs_L的10-100倍。
优选的,所述电阻RH和所述电阻RL均为0.9-1.1千欧。
有益效果:相对于现有技术,本发明的有益效果为:
(1)具有电路结构简单,易于实现,节约成本。
(2)不影响SiC MOSFET开关速度,可靠性高。
(3)负向串扰抑制效果明显,在母线电压U dc=500V的条件下,添加RCD抑制负向串扰尖峰的辅助支路有效减小98.5%的负向电压尖峰。
附图说明
图1为本发明的一种抑制SiC MOSFET负向串扰的电路;
图2为本发明实验原始驱动的栅源电压u gs,漏源电压u ds以及恒流源i电流波形;
图3 为本发明的实验RCD抑制电路的栅源电压u gs,漏源电压u ds以及恒流源i电流波形。
具体实施方式
下面结合附图对本发明创造做进一步详细说明。
一种抑制SiC MOSFET负向串扰的电路,电路包括SiC MOSFET上桥臂和SiC MOSFET下桥臂,在每个桥臂中都包括基本驱动电路和串扰抑制电路。
上桥臂的基本驱动电路包括供电电压源V1H、供电电压源V2H、开关管S1H、开关管S2H、开通栅极电阻Ron_H、关断栅极电阻Roff_H;供电电压源V1H的正极与开关管S1H的漏极相连,供电电压源V1H的负极与SiC MOSFET M1的源极相连,的开关管S1H的源极与开通栅极电阻Ron_H的一端相连,开通栅极电阻Ron_H的另一端与SiC MOSFET M1的栅极以及相连关断栅极电阻Roff_H的一端相连;供电电压源V2H的负极与开关管S2H的源极相连,供电电压源V2H的正极与SiC MOSFET M1的源极以及供电电压源V1H的负极相连,开关管S2H的漏极与关断栅极电阻Roff_H的另一端相连;
下桥臂的基本驱动电路包括供电电压源V1L、供电电压源V2L、开关管S1L、开关管S2L、开通栅极电阻Ron_L、关断栅极电阻Roff_L;供电电压源V1L的正极与开关管S1L的漏极相连,供电电压源V1L的负极与SiC MOSFET M2的源极相连,的开关管S1L的源极与开通栅极电阻Ron_L的一端相连,开通栅极电阻Ron_L的另一端与SiC MOSFET M2的栅极以及相连关断栅极电阻Roff_L的一端相连;供电电压源V2L的负极与开关管S2L的源极相连,供电电压源V2L的正极与SiC MOSFET M2的源极以及供电电压源V1L的负极相连,开关管S2L的漏极与关断栅极电阻Roff_L的另一端相连;
上桥臂的串扰抑制电路包括电阻RH、电容CH、二极管DH;其中电阻RH与电容CH并联后的一端与二极管DH阴极串联,电阻RH与电容CH并联后的另一端与SiC MOSFET M1的栅极相连,二极管DH阳极与SiC MOSFET M1的源极相连;
下桥臂的串扰抑制电路包括电阻RL、电容CL、二极管DL;其中电阻RL与电容CL并联后的一端与二极管DL阴极串联,电阻RL与电容CL并联后的另一端与SiC MOSFET M2的栅极相连,二极管DL阳极与SiC MOSFET M2的源极相连;
电容CH大于Cgs_H,电阻RH大于Roff_H,其中Cgs_H为SiC MOSFET M1的寄生电容;
电容CL大于Cgs_L,电阻RL大于 Roff_L,其中Cgs_L为SiC MOSFET M2的寄生电容。
电容CH的大小为寄生电容Cgs_H的10-100倍;电容CL的大小为寄生电容Cgs_L的10-100倍。
电阻RH和电阻RL均为0.9-1.1千欧。
工作原理:本抑制SiC MOSFET负向串扰的电路,当上管SiC MOSFET M1开通时,供电电源V1H给SiC MOSFET M1的寄生电容Cgs_H充电,此时RHCHDH回路不导通,SiC MOSFET M1开通速度不受影响。当上管SiC MOSFET M1关断时,供电电源V2H为负压(-3~-5V)迅速给寄生电容Cgs_H放电,当Cgs_H电压放电到小于CH电压时,DH才开始导通,因此SiC MOSFET M1关断速度不受负向串扰支路的影响。当上管SiC MOSFET M1负向串扰产生时,RHCHDH支路阻抗远小于Cgs_H,负向串扰的干扰电流主要通过二极管DH给CH充电流;由于CH>>Cgs_H(10~100倍)令CH电压波动很小,因此串扰尖峰被CH钳位接近V2H。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (4)
1.一种抑制SiC MOSFET负向串扰的电路,其特征在于,所述电路包括SiC MOSFET上桥臂和SiC MOSFET下桥臂,在每个桥臂中都包括基本驱动电路和串扰抑制电路;
所述上桥臂的基本驱动电路包括供电电压源V1H、供电电压源V2H、开关管S1H、开关管S2H、开通栅极电阻Ron_H、关断栅极电阻Roff_H;所述供电电压源V1H的正极与所述开关管S1H的漏极相连,供电电压源V1H的负极与SiC MOSFET M1的源极相连,所述的开关管S1H的源极与开通栅极电阻Ron_H的一端相连,所述开通栅极电阻Ron_H的另一端与SiC MOSFET M1的栅极以及关断栅极电阻Roff_H的一端相连;供电电压源V2H的负极与开关管S2H的源极相连,供电电压源V2H的正极与SiC MOSFET M1的源极以及供电电压源V1H的负极相连,开关管S2H的漏极与关断栅极电阻Roff_H的另一端相连;
所述下桥臂的基本驱动电路包括供电电压源V1L、供电电压源V2L、开关管S1L、开关管S2L、开通栅极电阻Ron_L、关断栅极电阻Roff_L;所述供电电压源V1L的正极与所述开关管S1L的漏极相连,供电电压源V1L的负极与SiC MOSFET M2的源极相连,所述的开关管S1L的源极与开通栅极电阻Ron_L的一端相连,所述开通栅极电阻Ron_L的另一端与SiC MOSFET M2的栅极以及关断栅极电阻Roff_L的一端相连;供电电压源V2L的负极与开关管S2L的源极相连,供电电压源V2L的正极与SiC MOSFET M2的源极以及供电电压源V1L的负极相连,开关管S2L的漏极与关断栅极电阻Roff_L的另一端相连;
所述上桥臂的串扰抑制电路包括电阻RH、电容CH、二极管DH;其中所述电阻RH与所述电容CH并联后的一端与所述二极管DH的阴极相连,所述电阻RH与所述电容CH并联后的另一端与SiC MOSFET M1的栅极相连,所述二极管DH阳极与SiC MOSFET M1的源极相连;
所述下桥臂的串扰抑制电路包括电阻RL、电容CL、二极管DL;其中所述电阻RL与所述电容CL并联后的一端与所述二极管DL阴极相连,所述电阻RL与所述电容CL并联后的另一端与SiCMOSFET M2的栅极相连,所述二极管DL阳极与SiC MOSFET M2的源极相连。
2.如权利要求1所述的一种抑制SiC MOSFET负向串扰的电路,其特征在于,
所述电容CH大于Cgs_H,电阻RH大于Roff_H,其中Cgs_H为SiC MOSFET M1的寄生电容;
所述电容CL大于Cgs_L,电阻RL大于 Roff_L,其中Cgs_L为SiC MOSFET M2的寄生电容。
3.如权利要求2所述的一种抑制SiC MOSFET负向串扰的电路,其特征在于,所述电容CH的大小为寄生电容Cgs_H的10-100倍;所述电容CL的大小为寄生电容Cgs_L的10-100倍。
4.如权利要求2所述的一种抑制SiC MOSFET负向串扰的电路,其特征在于,所述电阻RH和所述电阻RL均为0.9千欧到1.1千欧。
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