CN114657609A - 一种超低轮廓铜箔及制备方法 - Google Patents

一种超低轮廓铜箔及制备方法 Download PDF

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CN114657609A
CN114657609A CN202210464789.0A CN202210464789A CN114657609A CN 114657609 A CN114657609 A CN 114657609A CN 202210464789 A CN202210464789 A CN 202210464789A CN 114657609 A CN114657609 A CN 114657609A
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copper foil
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transition metal
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李建国
张燕聪
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Fujian Xinyu Flexible Material Technology Co ltd
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Abstract

本发明提出了一种超低轮廓铜箔及制备方法，涉及高密度超微细印刷电路板使用的铜箔，解决了现有技术中铜箔存在厚度不够薄、工艺复杂和成本高的缺陷。超低轮廓铜箔包括有机薄膜层、过渡金属层和金属剥离层及铜箔层；有机薄膜层为基材，过渡金属层位于有机薄膜层上表面，金属剥离层位于过渡金属层表面，铜箔层位于金属剥离层表面。制备方法包括：S1，对有机薄膜层的上表面进行等离子表面处理；S2，在机薄膜层的上表面镀一层过渡金属层；S3，在过渡金属层上表面镀一层金属剥离层；S4，在金属剥离层表面镀一层铜箔层。本发明的超低轮廓铜箔，生产工艺简便，成本低，有利于极薄铜箔的制备，生产出来的铜箔具有超低轮廓度。

Description

一种超低轮廓铜箔及制备方法
技术领域
本发明涉及制造高密度超微细印刷电路板时使用的铜箔，具体涉及一种有机薄膜做载体的超低轮廓铜箔及制备方法。
背景技术
随着电子技术的不断发展，人们对于电子产品的要求逐渐趋向于短、小、轻、薄方向发展，相应地，印制电路板作为电子产品的重要组成部分，也需向多层化、密集化、功能化方向发展，对组成电路板的原材料有更高的要求。超薄铜箔作为电路板的关键原材料之一，对其的研制开发制约着印制电路板的进一步发展。超薄铜箔的使用不仅可以满足印制电路板向多层化、密集化的要求，还可以提高印制电路板的可靠性，减少线路蚀刻加工中的侧蚀问题，降低激光蚀孔加工的难度。
目前，超薄铜箔的生产大多以载体铜箔的方式生产，以铜箔作为载体通过电镀技术制备超薄铜箔。如三井金属鈜业株式会社在我国申请的专利(专利号CN99101239.9)中以铜或铜合金作为载体，通过电镀制备超薄铜箔。瑟基特·弗依卢森堡贸易公司在我国申请的专利(专利号CN01805265.7)中以铜作为载体，通过电沉积制备超薄铜箔。由于“集肤效应”的影响，高频电流在通过铜箔时会产生功率损耗，而剥离层和超薄铜箔厚度很薄，因此，载体层的表面粗糙度对超薄铜箔的影响较大。因此，载体铜箔的表面必须经过特殊处理或改善制备铜箔的工艺，才能实现制备高质量的超薄铜箔的目的，这无形中会增加制备超薄铜箔的成本，阻碍超薄铜箔的发展。
发明内容
本发明提出了一种超低轮廓铜箔，解决了现有技术中以铜或铜合金作为载体，通过电镀制备超薄铜箔存在的厚度不够薄、生产工艺复杂和生产成本高的缺陷。
本发明的技术方案是这样实现的：
本发明首先提出了一种超低轮廓铜箔，包括有机薄膜层、过渡金属层和金属剥离层及铜箔层；有机薄膜层为载体，过渡金属层位于有机薄膜层上表面，金属剥离层位于过渡金属层表面，铜箔层位于金属剥离层表面；有机薄膜层厚度为25-125μm，过渡金属层为20-150nm，金属剥离层为1-5μm，铜箔层厚度为1-18μm。
作为进一步的技术方案，所述铜箔层的表面还覆盖有抗氧化膜。
作为进一步的技术方案，所述金属剥离层表面设置有抗氧化层。
作为进一步的技术方案，所述抗氧化层为有机溶剂覆盖层。
作为进一步的技术方案，所述有机薄膜层为PET膜或PI膜。
作为进一步的技术方案，所述过渡金属层材质为镍、铜、铬、钛或铁，或者为镍、铜、铬、钛、铁中两者或两者以上的合金；所述金属剥离层材质为铜、镍、铬、镍铬合金、氧化铝、氧化铌中的一种或多种。
本发明其次提出了一种超低轮廓铜箔的制备方法，包括以下步骤：
S1，对有机薄膜层的上表面进行等离子表面处理；
S2，在机薄膜层的上表面采用磁控溅射镀一层过渡金属层；
S3，在过渡金属层表面电镀一层金属剥离层；
S4，在金属剥离层表面电镀一层铜箔层。
作为进一步的技术方案，步骤S3还包括在所述金属剥离层表面设置抗氧化层，抗氧化层为所述金属剥离层采用浸泡或涂覆方式形成的有机溶剂覆盖层。
作为进一步的技术方案，步骤S4还包括在对铜箔层表面进行粗化面处理，同步在其粗面化处理面上实施电化学处理或化学处理形成抗氧化膜，粗化面处理方式为电镀铜微细粒子的粗化电镀、化学刻蚀处理或电化学刻蚀处理中的一种。
作为进一步的技术方案，步骤S1中在真空室内对有机薄膜层的上表面进行等离子表面处理，等离子处理功率为0.5-2KW，真空室内气体为氩气、氮气和氧气中一种或多种气体，气体压力为1×10-2-2×102Pa；步骤S2中采用磁控溅射镀层时，靶材为铜、镍、镍铬合金、钛、铁、氧化铌中的一种或多种，磁控溅射的气体为氩气、氮气和氧气中一种或多种混合气体，真空度为2×10-1-3×10-3Pa，靶电流5-15A。
本发明的有益效果：
1、本发明的超低轮廓铜箔采用有机薄膜层作为基材，生产工艺简便，成本低，有利于极薄铜箔的制备，生产的铜箔具有超低轮廓度。
2、本发明铜箔的金属剥离层具有超低轮廓度，一般在1<Rz<1.5μm左右；铜箔层经粗化处理后达到粗糙度可调整到Rz2-4μm，便于贴合加工，可以用作高频高速电路、IC封装载板、挠性覆铜板材料、电磁屏蔽材料。
3、本发明的超低轮廓铜箔的制备方法，生产工艺简便，成本低。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为实施例1的结构示意图；
图2为实施例2的结构示意图；
图3为实施例3的结构示意图。
附图标号：1-机薄膜层，2-过渡金属层，3-金属剥离层，4-抗氧化层，5-铜箔层，6-抗氧化膜。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例1
参照图1，本实施例提出了一种超低轮廓铜箔，包括有机薄膜层1、过渡金属层2和金属剥离层3及铜箔层5。
有机薄膜层1为载体，有机薄膜层1可以选择PET膜或PI膜，厚度为25-125μm。
过渡金属层2位于有机薄膜层1上表面，过渡金属层2材质为铜、镍、铬、镍铬合金、氧化铝、氧化铌中的一种或多种，过渡金属层2采用真空磁控溅射镀膜制备，过渡金属层2厚度为20-150nm。
金属剥离层3位于过渡金属层2上表面，金属剥离层3剥离层材质为镍、铜、铬、钛或铁，也可以是上述金属中的两者或两者以上的合金，金属剥离层3通过电镀方式镀在过渡金属层2上表面，金属剥离层3厚度为1-5μm。
铜箔层5位于金属剥离层3上表面，铜箔层5采用电镀方式镀在金属剥离层3上表面，电镀方式可以选择酸性电镀铜或碱性电镀铜，铜箔层5厚度为1-18μm。
本发明采用有机薄膜层1作为基材，生产工艺简便，成本低，有利于极薄铜箔的制备，生产出来的具有铜箔超低轮廓度。
实施例2
参照图2，本实施例与实施例1的区别在于：所述金属剥离层3表面设置有抗氧化层4，抗氧化层4为所述金属剥离层3采用浸泡或涂覆方式形成的有机溶剂覆盖层，所述有机覆盖膜是具有抗氧化功能的有机溶剂混合物。
实施例3
参照图3，本实施例与实施例2的区别在于：所述铜箔层5的表面经粗化处理，粗化方式采用电镀铜微细粒子的粗化电镀、化学刻蚀处理或电化学刻蚀处理，对电解铜箔进行粗化面处理时，同步在其粗面化处理面上实施电化学处理或化学处理形成抗氧化膜6。
实施例4
本实施例提出了一种超低轮廓铜箔的制备方法，包括以下步骤：
S1，在真空室内对有机薄膜层的上表面进行等离子表面处理，等离子处理功率为0.5-2KW，真空室内气体为氩气、氮气和氧气中一种或多种气体，气体压力为1×10-2-2×102Pa；
S2，在机薄膜层的上表面采用磁控溅射镀一层过渡金属层，靶材为铜、镍、镍铬合金、钛、铁、氧化铌中的一种或多种，磁控溅射的气体为氩气、氮气和氧气中一种或多种混合气体，真空度为2×10-1-3×10-3Pa，靶电流5-15A；
S3，在过渡金属层表面电镀一层金属剥离层，金属剥离层表面设置抗氧化层，抗氧化层为所述金属剥离层采用浸泡或涂覆方式形成的有机溶剂覆盖层；
S4，在金属剥离层表面电镀一层铜箔层，对铜箔层表面进行粗化面处理，同步在其粗面化处理面上实施电化学处理或化学处理形成抗氧化膜，粗化面处理方式为电镀铜微细粒子的粗化电镀、化学刻蚀处理或电化学刻蚀处理中的一种。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (10)

1.一种超低轮廓铜箔，其特征在于：包括有机薄膜层、过渡金属层和金属剥离层及铜箔层；
有机薄膜层为载体，过渡金属层位于有机薄膜层上表面，金属剥离层位于过渡金属层表面，铜箔层位于金属剥离层表面；
有机薄膜层厚度为25-125μm，过渡金属层为20-150nm，金属剥离层为1-5μm，铜箔层厚度为1-18μm。
2.如权利要求1所述的一种超低轮廓铜箔，其特征在于：所述铜箔层的表面还覆盖有抗氧化膜。
3.如权利要求2所述的一种超低轮廓铜箔，其特征在于：所述金属剥离层表面设置有抗氧化层。
4.如权利要求3所述的一种超低轮廓铜箔，其特征在于：所述抗氧化层为有机溶剂覆盖层。
5.如权利要求1所述的一种超低轮廓铜箔，其特征在于：所述有机薄膜层为PET膜或PI膜。
6.如权利要求1所述的一种超低轮廓铜箔，其特征在于：所述过渡金属层材质为镍、铜、铬、钛或铁，或者为镍、铜、铬、钛、铁中两者或两者以上的合金；所述金属剥离层材质为铜、镍、铬、镍铬合金、氧化铝、氧化铌中的一种或多种。
7.一种超低轮廓铜箔的制备方法，其特征在于：
包括以下步骤：
S1，对有机薄膜层的上表面进行等离子表面处理；
S2，在机薄膜层的上表面采用磁控溅射镀一层过渡金属层；
S3，在过渡金属层表面电镀一层金属剥离层；
S4，在金属剥离层表面电镀一层铜箔层。
8.如权利要求7所述的一种超低轮廓铜箔的制备方法，其特征在于：步骤S3还包括在所述金属剥离层表面设置抗氧化层，抗氧化层为所述金属剥离层采用浸泡或涂覆方式形成的有机溶剂覆盖层。
9.如权利要求7所述的一种超低轮廓铜箔的制备方法，其特征在于：步骤S4还包括在对铜箔层表面进行粗化面处理，同步在其粗面化处理面上实施电化学处理或化学处理形成抗氧化膜，粗化面处理方式为电镀铜微细粒子的粗化电镀、化学刻蚀处理或电化学刻蚀处理中的一种。
10.如权利要求7所述的一种超低轮廓铜箔的制备方法，其特征在于：步骤S1中在真空室内对有机薄膜层的上表面进行等离子表面处理，等离子处理功率为0.5-2KW，真空室内气体为氩气、氮气和氧气中一种或多种气体，气体压力为1×10-2-2×102Pa；步骤S2中采用磁控溅射镀层时，靶材为铜、镍、镍铬合金、钛、铁、氧化铌中的一种或多种，磁控溅射的气体为氩气、氮气和氧气中一种或多种混合气体，真空度为2×10-1-3×10-3Pa，靶电流5-15A。
CN202210464789.0A 2022-04-25 2022-04-25 一种超低轮廓铜箔及制备方法 Pending CN114657609A (zh)

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