CN114649461A - 二极管封装结构及其制造方法 - Google Patents

二极管封装结构及其制造方法 Download PDF

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CN114649461A
CN114649461A CN202111066874.3A CN202111066874A CN114649461A CN 114649461 A CN114649461 A CN 114649461A CN 202111066874 A CN202111066874 A CN 202111066874A CN 114649461 A CN114649461 A CN 114649461A
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diode
opaque
encapsulant
substrate
side wall
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方语靖
徐湘淳
张正平
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Lextar Electronics Corp
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Abstract

一种二极管封装结构及其制造方法，二极管封装结构包含一基板、至少一二极管芯片以及不透明封装胶。基板具有导电层。二极管芯片固晶于基板上，且电性连接至导电层。不透明封装胶具有一覆盖部分与一侧墙部分，侧墙部分连接并环绕基板以共同形成一凹槽。覆盖部分连接于二极管芯片的侧壁与侧墙部分之间，其中覆盖部分与二极管芯片的侧壁的第一接触顶点高于覆盖部分与侧墙部分的第二接触顶点。本案的二极管封装结构能因应热胀冷缩不易产生剥离的问题。

Description

二极管封装结构及其制造方法
技术领域
本发明是关于一种二极管封装结构及其制造方法。
背景技术
发光二极管(Light Emitting Diode,LED)是半导体材料制成的发光元件，可将电能转换成光，其具有体积小、能量转换效率高、寿命长、省电等优点，因此广泛应用于各式电子装置的光源。
发光二极管的封装结构包含各种封装胶体以因应不同的需求。不同种类的封装胶体常因胶体材料特性的不同造成不同胶体之间界面容易剥离的状况。有鉴于此，供应商需要各种解决方案以控制界面剥离的状况。
发明内容
本发明提出一种创新的二极管封装结构及其制造方法，解决先前技术的问题。
于本发明的一实施例中，一种二极管封装结构包含一基板、至少一二极管芯片以及不透明封装胶。基板具有导电层。二极管芯片固晶于基板上，且电性连接至导电层。不透明封装胶具有一覆盖部分与一侧墙部分，侧墙部分连接并环绕基板以共同形成一凹槽。覆盖部分连接于二极管芯片的侧壁与侧墙部分之间，其中覆盖部分与二极管芯片的侧壁的第一接触顶点高于覆盖部分与侧墙部分的第二接触顶点。
于本发明的一实施例中，二极管封装结构还包含一透明封装胶，透明封装胶填入凹槽以盖覆二极管芯片，并与侧墙部分形成一第一界面，其中第一接触顶点与第二接触顶点之间的连线与第一界面之间的夹角为一锐角。
于本发明的一实施例中，透明封装胶与覆盖部分形成一第二界面，第二界面包含一曲面。
于本发明的一实施例中，覆盖部分遮蔽导电层。
于本发明的一实施例中，不透明封装胶为白色或黑色封装胶。
于本发明的一实施例中，二极管芯片为发光二极管、光电二极管或齐纳二极管。
于本发明的一实施例中，一种二极管封装结构的制造方法包含以下步骤。提供一基板。将多个二极管芯片固晶于基板上。形成第一不透明封装胶于这些二极管芯片之间。形成透明封装胶覆盖于这些二极管芯片与第一不透明封装胶上。在透明封装胶与第一不透明封装胶的层叠的区域，形成一沟渠以裸露基板。在沟渠内，填入第二不透明封装胶，其中第一不透明封装胶与二极管芯片的侧壁的第一接触顶点高于第一不透明封装胶与第二不透明封装胶的第二接触顶点。
于本发明的一实施例中，透明封装胶与第二不透明封装胶形成一界面，第一接触顶点与第二接触顶点之间的连线与界面之间的夹角为一锐角。
于本发明的一实施例中，不透明封装胶为白色或黑色封装胶。
于本发明的一实施例中，二极管芯片为发光二极管、光电二极管或齐纳二极管。
综上所述，本发明的二极管封装结构及其制造方法，能使透明封装胶以及不透明封装胶接合的二界面形成锐角的夹角，相较于已知二极管封装结构的封装胶界面会呈现圆弧导角，能因应热胀冷缩较不易产生剥离的问题。
以下将以实施方式对上述的说明作详细的描述，并对本发明的技术方案提供更进一步的解释。
附图说明
为让本发明的上述和其他目的、特征、优点与实施例能更明显易懂，所附附图的说明如下：
图1是绘示依照本发明一实施例的一种二极管封装结构的剖面图；以及
图2～4是绘示依照本发明一实施例的一种二极管封装结构的制造方法的剖面图。
【符号说明】
为让本发明的上述和其他目的、特征、优点与实施例能更明显易懂，所附符号的说明如下：
100:二极管封装结构
102:基板
102a:导电层
104:不透明封装胶
104a:覆盖部分
104b:侧墙部分
106a:二极管芯片
106b:二极管芯片
107a:连线
107b:第一界面
107c:第二界面
108:透明封装胶
108a:凹槽
109a:第一接触顶点
109b:第二接触顶点
200:二极管封装结构单体
202:基板
202a:凹陷
204a:第一不透明封装胶
204b:第二不透明封装胶
206:二极管芯片
207a:连线
207b:界面
207c:界面
208:透明封装胶
209a:接触顶点
209b:接触顶点
210:切割线
θ:夹角
具体实施方式
为了使本发明的叙述更加详尽与完备，可参照所附的附图及以下所述各种实施例，附图中相同的号码代表相同或相似的元件。另一方面，众所周知的元件与步骤并未描述于实施例中，以避免对本发明造成不必要的限制。
于实施方式与权利要求书中，涉及“电性连接”的描述，其可泛指一元件透过其他元件而间接电气耦合至另一元件，或是一元件无须透过其他元件而直接电连接至另一元件。
于实施方式与权利要求书中，除非内文中对于冠词有所特别限定，否则“一”与“该”可泛指单一个或多个。
请参照图1，其绘示依照本发明一实施例的一种二极管封装结构的剖面图。二极管封装结构100包含一基板102、至少一二极管芯片以及封装胶。在本揭露的一些实施例中，基板102具有导电层102a，借以传导二极管运作所需的电流。在本揭露的一些实施例中，基板102可以是平板，例如是BT板、EMC板、SMC板、陶瓷板、PCB板或Sapphire板等。在本揭露的一些实施例中，导电层102a可以是金属镀层，但不以此为限。
在本揭露的一些实施例中，二极管芯片106a可以是发光二极管，而二极管芯片106b可以是齐纳二极管或光电二极管。在本揭露的一些实施例中，二极管芯片106a可以是发光二极管，而二极管芯片106b亦可以是发光二极管(例如不同颜色的发光二极管)。在本揭露的一些实施例中，二极管芯片(106a、106b)可均为齐纳二极管或光电二极管。二极管芯片(106a、106b)固晶于基板102上，且电性连接至基板102上的导电层102a(例如借打线或焊接方式达成)。在本揭露的一些实施例中，二极管芯片的型式可以是传统水平式(face up)、垂直式(vertical)或覆晶式(flip chip)。
在本揭露的一些实施例中，封装胶可包含透明封装胶108以及不透明封装胶104。不透明封装胶104具有一覆盖部分104a与一侧墙部分104b，侧墙部分104b连接并环绕基板102以共同形成一凹槽108a。覆盖部分102a连接于相邻的二极管芯片(106a、106b)之间、二极管芯片(106a或106b)的侧壁与侧墙部分104b之间，借以遮蔽或覆盖基板102上表面或其导电层102a，进而使元件不会因导电层氧化变色发生色偏或亮度衰减，可提升产品寿命。在本揭露的一些实施例中，覆盖部分104a与侧墙部分104b可以是同一种封装胶，借以避免不同材料所造成界面剥离问题或其他缺点。在本揭露的一些实施例中，不透明封装胶104可以是白色封装胶或黑色封装胶，借以符合不同需求的应用环境，例如白色封装胶可增加光反射率借以提升光效3～40％，黑色封装胶可降低光元件杂讯比。在本揭露的一些实施例中，透明封装胶108填入侧墙部分104b与基板102所形成的凹槽108a内以盖覆二极管芯片(106a、106b)，并与覆盖部分104a形成一第二界面107c。在本揭露的一些实施例中，透明封装胶108可以是有机胶、无机胶或其任意比例混合，例如硅胶(Silicon)、环氧树脂(Epoxy)、氟胶等。在本揭露的一些实施例中，不透明封装胶104可为有机胶或无机胶，可包含陶瓷、金属、玻璃、二氧化钛或二氧化硅等内容物。
在本揭露的一些实施例中，覆盖部分104a与二极管芯片106a的侧壁的第一接触顶点109a高于覆盖部分104a与侧墙部分104b的第二接触顶点109b。在本揭露的一些实施例中，透明封装胶108与侧墙部分104b形成一第一界面107b，其中第一接触顶点109a与第二接触顶点109b之间的连线107a与第一界面107b之间的夹角θ为一锐角，使得透明封装胶108以及不透明封装胶104之间的界面(即107b与107c)较不易产生剥离的问题。
在本揭露的一些实施例中，透明封装胶108与覆盖部分104a之间形成曲面的第二界面107c。
请参照图2～4，其绘示依照本发明一实施例的一种二极管封装结构的制造方法步骤的剖面图。
在图2中，提供一基板202，并将多个二极管芯片206固晶于基板202上，并使二极管芯片206电连接至基板202。接着形成第一不透明封装胶204a于相邻二极管芯片206之间，进而形成类似图1的覆盖部分。在本揭露的一些实施例中，二极管芯片206可以是发光二极管、光电二极管与齐纳二极管至少其中的一者。在本揭露的一些实施例中，基板202可以是平板，例如是BT板、EMC板、SMC板、陶瓷板、PCB板或Sapphire板等。在本揭露的一些实施例中，二极管芯片206的型式可以是传统水平式(face up)、垂直式(vertical)或覆晶式(flipchip)。
在图3中，形成透明封装胶208覆盖于这些二极管芯片206与第一不透明封装胶204a上。透明封装胶208与第一不透明封装胶204a之间形成界面207c。接着在透明封装胶208与第一不透明封装胶204a的层叠的区域，形成一沟渠205以裸露基板202。在本揭露的一些实施例中，沟渠205的部分包含基板202上的凹陷202a。
在图4中，在沟渠205内，填入第二不透明封装胶204b，进而形成如前述的侧墙部分104b。第一不透明封装胶204a与二极管芯片206的侧壁的第一接触顶点209a高于第一不透明封装胶204a与第二不透明封装胶204b的第二接触顶点209b。接着，沿切割线210切开使多个二极管封装结构单体200能分开使用。在本揭露的一些实施例中，每个二极管封装结构单体200亦可包含二个或以上的二极管芯片206，例如二极管封装结构包含一个发光二极管、光电二极管或齐纳二极管，抑或多个发光二极管、多个光电二极管或多个齐纳二极管。
在本揭露的一些实施例中，透明封装胶208与第二不透明封装胶204b形成一界面207b，第一接触顶点209a与第二接触顶点209b之间的连线207a与界面207b之间的夹角θ为一锐角，使得透明封装胶208、第一不透明封装胶204a以及第二不透明封装胶204b之间的界面(即界面207b、207c)较不易产生剥离的问题。
在本揭露的一些实施例中，第一不透明封装胶204a与第二不透明封装胶204b可以是同一种封装胶，借以避免不同材料所造成界面剥离问题或其他缺点。在本揭露的一些实施例中，第一不透明封装胶204a与第二不透明封装胶204b可以是白色或黑色封装胶，借以符合不同需求的应用环境，例如白色封装胶可增加光反射率借以提升光效3～40％，黑色封装胶可降低光元件杂讯比。在本揭露的一些实施例中，透明封装胶208可以是有机胶、无机胶或其任意比例混合，例如硅胶(Silicon)、环氧树脂(Epoxy)、氟胶等。在本揭露的一些实施例中，第一、二不透明封装胶(204a、204b)可为有机胶或无机胶，可包含陶瓷、金属、玻璃、二氧化钛或二氧化硅等内容物。
本发明的二极管封装结构及其制造方法，能使透明封装胶以及不透明封装胶接合的二界面形成锐角的夹角，相较于已知二极管封装结构的封装胶界面会呈现圆弧导角，能因应热胀冷缩较不易产生剥离的问题。
虽然本发明已以实施方式揭露如上，然其并非用以限定本发明，任何熟悉此技艺者，于不脱离本发明的精神和范围内，当可作各种的更动与润饰，因此本发明的保护范围当视所附的权利要求书所界定的范围为准。

Claims (10)

1.一种二极管封装结构，其特征在于，包含：
一基板，具有导电层；
至少一二极管芯片，固晶于该基板上，且电性连接至该导电层；以及
不透明封装胶，具有一覆盖部分与一侧墙部分，该侧墙部分连接并环绕该基板以共同形成一凹槽，该覆盖部分连接于该二极管芯片的侧壁与该侧墙部分之间，其中该覆盖部分与该二极管芯片的侧壁的第一接触顶点高于该覆盖部分与该侧墙部分的第二接触顶点。
2.根据权利要求1所述的二极管封装结构，其特征在于，还包含一透明封装胶，该透明封装胶填入该凹槽以盖覆该二极管芯片，并与该侧墙部分形成一第一界面，其中该第一接触顶点与该第二接触顶点之间的连线与该第一界面之间的夹角为一锐角。
3.根据权利要求2所述的二极管封装结构，其特征在于，该透明封装胶与该覆盖部分形成一第二界面，该第二界面包含一曲面。
4.根据权利要求1所述的二极管封装结构，其特征在于，该覆盖部分遮蔽该导电层。
5.根据权利要求1所述的二极管封装结构，其特征在于，该不透明封装胶为白色或黑色封装胶。
6.根据权利要求1所述的二极管封装结构，其特征在于，该二极管芯片为发光二极管、光电二极管或齐纳二极管。
7.一种二极管封装结构的制造方法，其特征在于，包含：
提供一基板；
将多个二极管芯片固晶于该基板上；
形成第一不透明封装胶于所述多个二极管芯片之间；
形成透明封装胶覆盖于所述多个二极管芯片与该第一不透明封装胶上；
在该透明封装胶与该第一不透明封装胶的层叠的区域，形成一沟渠以裸露该基板；以及
在该沟渠内，填入第二不透明封装胶，其中该第一不透明封装胶与所述多个二极管芯片的侧壁的第一接触顶点高于该第一不透明封装胶与该第二不透明封装胶的第二接触顶点。
8.根据权利要求7所述的制造方法，其特征在于，该透明封装胶与该第二不透明封装胶形成一界面，该第一接触顶点与该第二接触顶点之间的连线与该界面之间的夹角为一锐角。
9.根据权利要求7所述的制造方法，其特征在于，该不透明封装胶为白色或黑色封装胶。
10.根据权利要求7所述的制造方法，其特征在于，该二极管芯片为发光二极管、光电二极管或齐纳二极管。
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