CN114630494B - Interconnection structure of wafer integration system and top PCB and manufacturing method thereof - Google Patents
Interconnection structure of wafer integration system and top PCB and manufacturing method thereof Download PDFInfo
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- CN114630494B CN114630494B CN202210511528.XA CN202210511528A CN114630494B CN 114630494 B CN114630494 B CN 114630494B CN 202210511528 A CN202210511528 A CN 202210511528A CN 114630494 B CN114630494 B CN 114630494B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/325—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor
- H05K3/326—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor the printed circuit having integral resilient or deformable parts, e.g. tabs or parts of flexible circuits
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Abstract
The invention discloses an interconnection structure of a wafer integration system and a top PCB and a manufacturing method thereof, and the interconnection structure comprises a metal structural member, wherein a groove is arranged in the metal structural member, the wafer integration system is arranged in the groove, the lower surface of the wafer integration system and the upper surface of the groove are also provided with heat conduction materials, the top end of the metal structural member is connected with a rigid plate, the rigid plate is connected with a PCB, the PCB is connected with a power module and an I/O module, an electrical connection device is arranged in the rigid plate, the lower surface of the electrical connection device is connected with the wafer integration system, and the upper surface of the electrical connection device is connected with the PCB. The invention solves the key technical problem of interconnection between the wafer integrated system and the traditional PCB integrated system, and particularly can solve the problem of interconnection failure caused by the warping of the PCB, thereby providing reliable technical guarantee for the hybrid integration of the wafer integrated system and the traditional printed circuit integrated system.
Description
Technical Field
The invention relates to the technical field of wafer integrated systems, in particular to an interconnection structure of a wafer integrated system and a top PCB and a manufacturing method thereof.
Background
Along with the gradual failure of Moore's law and Dender's scaling law, the improvement of the computing performance by the process progress is obviously slowed down, the data volume of the interconnection of everything is exponentially and explosively increased, the 'scissors difference' gap between the data scale and the computing power is larger and larger, the integrated circuit is in the important revolution of the technology and the industry of the 'post Mole' era, and the development of the system architecture also has a new trend. Currently, software and hardware cooperative computing is becoming a new computing model, and a new service model is created by defining a hardware system, a network platform, and even an infrastructure through software, centering on application-oriented software definition. In the world Computer Architecture conference (ISCA, International Symposium on Computer Architecture) in 2018, John l, Hennessy and David a, Patterson also pointed out that domain-specific software and hardware cooperative computing becomes a new direction for the development of Computer Architecture.
Aiming at the problem that moore's law is inexorable, the academic and industrial circles mainly adopt system-in-package (SIP), and package-based System (SOP) or chip-scale integration (SOC) technology to expand moore's law. The high-density substrate is an SIP integrated physical carrier, the functions of the high-density substrate comprise electrical interconnection among components, transmission of signals such as radio frequency, analog and digital signals, and the high-density substrate can be embedded with partial passive elements, power dividers, filters and the like to provide heat dissipation channels for the components. The SIP packaging technology essentially adopts a flip chip process or a wire bonding process to perform 2D packaging on a plurality of chips, and the packaged device still needs to be attached to a PCB to cooperate with other devices (such as power management, interface driving, I/O interface devices). Therefore, due to the limitation of the integration scale of the SIP itself and the restriction of partial function integration means, it is still difficult to comprehensively solve the necessary requirements of systems such as heat dissipation, power supply, external interconnection, platform integration, etc., and an independent system cannot be formed; the SOC technology is still a chip design technology essentially, chips with different functions and the same process are integrated together, and the SOC is difficult to form an independent system with powerful functions due to the chip processing technology and the performance of semiconductor materials; the SOP is oriented to system application, components such as SIP, components and parts, a connector, a heat dissipation structure and the like are integrated into a generalized package with system functions based on a system mainboard, the SOP can load system software, has complete system functions, is the most reasonable and intuitive integration situation of a functional integrated micro-system, is also the core integration capability of a complete machine and a system, but has larger size, and the design concept is still based on the traditional assembly technology.
Different from SIP, SOC, SOP are: the substrate used in the wafer level system is a whole semiconductor wafer, such as a 2-to 12-inch silicon wafer, the wafer is not diced, the wafer is wired by using an RDL process, and the wafer is used for preparing active devices, such as switches, operational amplifiers, ADCs, logic unit circuits and the like, according to system functions by using a semiconductor process. And the device is not prepared according to the application requirements of the system, only RDL (radio frequency interconnect) wiring is used, and the whole wafer is used for replacing the traditional substrate. The on-chip system runs through the whole flow of integrated circuit design, processing and packaging, and integrates advanced concepts of prefabricated part assembly, wafer integration and the like. By virtue of the remarkable advantages of high bandwidth, low delay, low power consumption and the like of wafer-level interconnection, thousands of prefabricated part particles such as sensing, radio frequency, calculation, storage, communication and the like can be integrated on a single wafer. The method breaks through boundary conditions such as the design method, the implementation material and the integration mode of the existing integrated circuit, upgrades the 2D package to the 2.5D/3D package, expands a single process to various processes, expands silicon-based materials to various heterogeneous base materials, promotes a rigid system structure to a flexible software defined structure, effectively breaks the performance limit of the current chip and breaks through the ceiling effect of the project technology route of the key information infrastructure relying on the stacking type. The technical and physical forms of traditional equipment or systems are refreshed, so that the comprehensive technical indexes of the system obtain multiplicative gain, and the sustainable development requirements of new-generation infrastructures such as intelligent era 5G, big data, cloud platforms, AI, edge computing, intelligent networks and the like are met. However, the difficulty of the wafer integration system is limited by the mechanical strength of the wafer and the RDL wiring rule, and especially the key technologies of power supply, heat dissipation, etc. of the wafer integration system of 8 inches or more are not solved effectively. The main technical difficulty is how to form stable and reliable electrical connection between a power supply system and a wafer integrated system, and no good solution exists at present.
The invention develops technical innovation aiming at the problem of forming effective and reliable interconnection and intercommunication between a wafer integrated system based on a semiconductor packaging process and a PCB based on a screen printing process, and effectively solves the information interaction problem between a large-size wafer and the PCB by means of elastic connection, PCB anti-warping prefabricated part manufacturing and the like.
Disclosure of Invention
The present invention provides an interconnection structure between a wafer integrated system and a top PCB and a method for manufacturing the same.
The technical scheme adopted by the invention is as follows:
wafer integrated system and interconnection structure of top PCB board, including metallic structure, the metallic structure is provided with the recess, be provided with wafer integrated system in the recess, wafer integrated system's lower surface with the upper surface of recess still is provided with the heat conduction material, metallic structure's top is connected with the rigid plate, be connected with the PCB board on the rigid plate, be connected with power module and IO module on the PCB board, be provided with electrical connection device in the rigid plate, electrical connection device's lower surface is connected wafer integrated system, electrical connection device's upper surface is connected the PCB board.
Furthermore, the wafer integration system comprises a wafer, core particles, metal bumps and fillers, wherein the wafer is connected with the core particles, the metal bumps are connected between the adjacent core particles, and the fillers are arranged between the adjacent core particles, the wafer and the metal bumps.
Further, the structure of the metal bump is spherical, hemispherical, cubic or cylindrical.
Further, the filler is insulating organic matter, silicon dioxide or silicon nitride.
Further, the electrical connection device comprises an insulation medium, an elastic metal connector and a PCB pad, a plurality of insulation through holes are formed in the rigid plate, the side walls of the insulation through holes are provided with the insulation medium, the inner side of the insulation medium is provided with the elastic metal connector, the bottom end of the elastic metal connector is connected with the metal bumps, the top end of the elastic metal connector is connected with the PCB pad, and the PCB pad is connected with the lower surface of the PCB.
Further, the insulating medium is insulating paint, metal oxide, resin or organic glue.
Further, the elastic metal connector is a fuzz button, an elastic needle or a micro spring.
Further, a liquid cooling channel is arranged inside the metal structural part, and the liquid cooling channel is in a snake shape.
Further, the heat conduction material is heat conduction silicone grease, heat conduction silica gel or heat conduction grease.
Further, the rigid plate is a copper plate, a steel plate, a ceramic plate, a glass plate, or a resin plate.
Further, the PCB board is a printed circuit board with two or more layers.
Further, the power supply module comprises a DC-DC module, an LDO, an isolation transformer and a power supply filter network, and the DC-DC module, the LDO, the isolation transformer and the power supply filter network are electrically connected with each other.
Further, the I/O module comprises a connector assembly, an interface driving device and a serial-parallel converter assembly, wherein the connector assembly, the interface driving device and the serial-parallel converter assembly are electrically connected with each other.
The invention also provides a manufacturing method of the interconnection structure of the wafer integration system and the top PCB, which comprises the following steps:
step S1: welding a plurality of core grains on a wafer, connecting metal bumps between adjacent core grains, wherein the height of each metal bump is not lower than that of each core grain, filling a filler among the core grains, the wafer and the metal bumps to form a wafer integrated system, and grinding the wafer integrated system by a CMP (chemical mechanical polishing) process to expose the metal bumps;
step S2: manufacturing a snake-shaped liquid cooling channel with good sealing performance in the metal structural member, manufacturing an input port and an output port of the liquid cooling channel, and manufacturing a groove matched with the wafer integrated system in the metal structural member;
step S3: uniformly coating heat conducting materials on the bottom in the groove, putting the wafer integration system processed in the step S1 into the groove, attaching the heat conducting materials, compacting and discharging interface air to ensure that the height of the wafer integration system does not exceed the periphery of the groove, and forming a bottom prefabricated member;
step S4: manufacturing an insulation through hole on the rigid plate, welding an insulation medium on the inner wall of the insulation through hole, enabling the top end of the elastic metal connector to penetrate through the insulation through hole and to be in contact with a PCB pad, enabling the bottom end of the elastic metal connector to be attached to the metal salient points, enabling the top end of the PCB pad to be connected with the PCB, enabling the upper surface of the PCB to be attached to the power supply module and the I/O module, and connecting the rigid plate with the PCB to form a top prefabricated part;
step S5: and connecting the bottom prefabricated member and the top prefabricated member to finish the assembly.
The invention has the beneficial effects that: the warping problems of the PCB caused by multiple high-temperature lamination, different residual copper rates on the front side and the back side, asymmetric inner layer routing and asymmetric via holes are corrected and improved by utilizing the bending resistance and the flatness of the rigid plate, so that the warping rate of the PCB is reduced by at least one order of magnitude. Because the wafer integrated system based on the micro-nano technology has high processing precision, the line width can be in the nano level, and the pressure welding point is only 10um to 100um, which is 2 orders of magnitude higher than the processing precision of the printed circuit technology. The invention develops interconnection and intercommunication innovation based on a printed circuit process and a micro-nano process, well combines the two process technologies together, reduces the difference of process scissors through an elastic metal connector, eliminates flexible warpage through a rigid structure, eliminates the damage to a wafer integrated system due to vibration and extrusion through a metal structural member as an integral support, and obviously improves the reliability of an integral assembly structure. The wafer integration system is fixed by the heat-conducting silicone grease, so that on one hand, the interface thermal resistance between the lower surface of the wafer integration system and the upper surface of the groove of the metal structural member is reduced, and the heat diffusion capability of the wafer integration system can be obviously improved, on the other hand, the heat-conducting silicone grease belongs to thick paste, can well buffer the pressure stress transmitted from the elastic metal connector to the wafer integration system, and can obviously improve the anti-fragmentation performance of the wafer integration system. The invention solves the key technical problem of interconnection between the wafer integrated system and the traditional PCB integrated system from the technical level, and particularly can solve the problem of interconnection failure caused by the warping of the PCB; the connection and assembly technology of the wafer integrated system and peripheral circuits (such as power management and I/O interfaces) is solved from the assembly and reliability aspects; the problems of high-density thermal power heat conduction and heat dissipation of the wafer integrated system are solved from the thermal management perspective. Therefore, the invention can provide technical support for information exchange and provide reliable technical support for hybrid integration of the wafer integrated system and the traditional printed circuit integrated system.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a top view of a metallic structural member according to an embodiment of the present invention;
FIG. 3 is a left side view of a metallic structural member according to an embodiment of the present invention;
FIG. 4 is a schematic view of a liquid cooling channel according to an embodiment of the present invention.
Description of the reference numerals
1-metal structure, 11-groove, 12-liquid cooling channel, 2-wafer integrated system, 21-wafer, 22-core grain, 23-metal bump, 24-filler, 3-heat conduction material, 4-countersunk bolt, 5-rigid plate, 51-insulation through hole, 6-bolt, 7-PCB plate, 8-power module, 9-I/O module, 10-electrical connection device, 101-insulation medium, 102-elastic metal connector, and 103-PCB pad.
Detailed Description
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
See fig. 1, the interconnection structure of wafer integrated system and top PCB board, including metallic structure 1, metallic structure 1 is provided with recess 11, be provided with wafer integrated system 2 in the recess 11, wafer integrated system 2's lower surface with the upper surface of recess 11 still is provided with heat conduction material 3, metallic structure 1's top is connected with rigid plate 5, be connected with PCB board 7 on the rigid plate 5, be connected with power module 8 and io module 9 on the PCB board 7, be provided with electrical connection device 10 in the rigid plate 5, electrical connection device 10's lower surface is connected wafer integrated system 2, electrical connection device 10's upper surface is connected PCB board 7.
The wafer integration system 2 comprises a wafer 21, core particles 22, metal bumps 23 and fillers 24, wherein the wafer 21 is connected with the core particles 22, the metal bumps 23 are connected between the adjacent core particles 22, and the fillers 24 are arranged among the adjacent core particles 22, the wafer 21 and the metal bumps 23.
The structure of the metal bump 23 is spherical, hemispherical, cubic or cylindrical.
The filler 24 is an insulating organic substance, silicon dioxide or silicon nitride.
The electrical connection device 10 comprises an insulating medium 101, an elastic metal connector 102 and a PCB pad 103, wherein a plurality of insulating through holes 51 are formed in the rigid plate 5, the insulating medium 101 is arranged on the side wall of each insulating through hole 51, the elastic metal connector 102 is arranged on the inner side of each insulating medium 101, the bottom end of each elastic metal connector 102 is connected with the corresponding metal bump 23, the top end of each elastic metal connector 102 is connected with the corresponding PCB pad 103, and the PCB pad 103 is connected with the lower surface of the PCB 7.
The insulating medium 101 is insulating paint, metal oxide, resin or organic glue.
The elastic metal connector 102 is a fuzz button, an elastic needle, or a micro-spring.
The metal structural part 1 is internally provided with a liquid cooling channel 12, and the liquid cooling channel 12 is in a snake shape.
The heat conduction material 3 is heat conduction silicone grease, heat conduction silicone or heat conduction grease.
The rigid plate 5 is a copper plate, a steel plate, a ceramic plate, a glass plate or a resin plate.
The PCB 7 is a printed circuit board with two or more layers.
The power module 8 comprises a DC-DC module, an LDO, an isolation transformer and a power filter network, and the DC-DC module, the LDO, the isolation transformer and the power filter network are electrically connected with each other.
The I/O module 9 comprises a connector, an interface driver device and a serial-to-parallel converter device, which are electrically connected to each other.
A method for manufacturing an interconnection structure of a wafer integrated system and a top PCB board comprises the following steps:
step S1: welding a plurality of core grains 22 on a wafer 21, connecting metal bumps 23 between the adjacent core grains 22, wherein the height of the metal bumps 23 is not lower than that of the core grains 22, filling a filler 24 among the core grains 22, the wafer 21 and the metal bumps 23 to form a wafer integrated system 2, and grinding the wafer integrated system by a CMP process to expose the metal bumps 23;
step S2: a snake-shaped liquid cooling channel 12 with good sealing performance is manufactured in the metal structural member 1, an input port and an output port of the liquid cooling channel 12 are manufactured, and a groove 11 which is matched with the wafer integrated system 2 is manufactured in the metal structural member 1;
step S3: uniformly coating the heat conduction materials 3 on the bottom in the groove 11, placing the wafer integration system 2 processed in the step S1 into the groove 11, attaching the heat conduction materials 3, compacting and discharging interface air, so that the height of the wafer integration system 2 does not exceed the periphery of the groove 11, and forming a bottom prefabricated member;
step S4: an insulation through hole 51 is formed in the rigid plate 5, an insulation medium 101 is welded on the inner wall of the insulation through hole 51, the top end of the elastic metal connector 102 penetrates through the insulation through hole 51 and is in contact with the PCB pad 103, the bottom end of the elastic metal connector 102 is attached to the metal bump 23, the top end of the PCB pad 103 is connected with the PCB 7, the upper surface of the PCB 7 is attached to the power supply module 8 and the I/O module 9, and the rigid plate 5 is connected with the PCB 7 to form a top prefabricated part;
step S5: and connecting the bottom prefabricated member and the top prefabricated member to finish the assembly.
Example 1
Referring to fig. 2, the red copper structural member is manufactured by a machining process, and the external dimension of the red copper structural member is 400mm × 400mm × 20 mm.
Referring to fig. 3, a liquid cooling channel 12 is processed inside the red copper structural member, the cross section of the channel is a square with the side length of 4mm, the channel is in a snake shape, and the wall thickness is 4 mm. Sufficient M3 screw holes are processed on the red copper structural component, the distance between adjacent screw holes is 35-40mm, the hole depth is 9-10mm, the processing height on four corners is 1.5mm, the diameter is 1.5mm, the size error is within +/-10 um, 8M 4 screw through holes are processed at the position 5mm away from the positioning pins, a groove 11 matched with a 12-inch wafer in size is milled inside the red copper structural component, the depth of the groove 11 is 1.2mm-1.22mm, the inner diameter is 304.81mm, and salient points matched with wafer positioning marks are processed on the inner wall so as to fix the wafer and prevent the wafer from rotating, and the picture 4 is shown.
When the top PCB 7 is connected with the wafer integrated system 2, the distance between the core particles 22 in the wafer integrated system 2 is larger than 350um, on the basis, copper columns with the diameter of 100 plus one 150um and the height of 150um are prepared on the wafer integrated system 2 by using metal deposition and electroplating processes, the copper columns are fixed by using organic materials with the thickness of 160 plus one 200um, and then the copper columns are polished by using a CMP process to expose the copper columns.
And uniformly coating heat-conducting silicone grease on the back surface of the processed wafer integrated system 2, wherein the coating thickness is about 250um, and pasting the wafer integrated system 2 in a groove of a red copper structural member, compacting and leveling, so that the height of the wafer integrated system 2 is not higher than the boundary of the groove.
Machining a high-strength aviation aluminum alloy plate, wherein the shape of the high-strength aviation aluminum alloy plate is 400mm multiplied by 1.7mm, and accurately machining insulating through holes with the diameter of 0.3mm, the number and the positions of which are completely matched with those of copper columns, according to the distribution of the copper columns on the wafer integration system 2; processing through holes the number and the position of which are completely matched with the threaded holes of the red copper structural member M3 and positioning holes matched with positioning pins with the diameter of 1.5mm, wherein the hole precision is better than +/-10 um; and machining M2.5 countersunk head screw through holes matched with the positions and the number of the 7 holes of the PCB to be fixed. And finally, carrying out insulation treatment on the surface and the through holes of the machined high-strength aviation aluminum alloy plate by adopting processes such as thermal oxidation and the like.
A PCB (printed Circuit Board) 7 with a front surface provided with a power supply module 8, an I/O (input/output) module 9 and a driving circuit and a back surface only exposing a bonding pad and a processed high-strength aviation aluminum alloy plate are fixed by a plurality of M2.5 screws and matched elastic sheets, gaskets and nuts so as to eliminate the warping of the PCB 7. The PCB 7 has the main technical parameters of 350mm multiplied by 1.5mm, the plate is loose M6, the number of layers is 12, and the surface layer is plated with gold.
A plurality of hair buttons with the diameter of 10mil (0.254 mm) and the length of 70mil (1.778 mm) are plugged into the insulating through holes 51 with the diameter of 0.3mm, one end of each hair button is in contact with the PCB bonding pad 103, the other end of each hair button is slightly higher than the plane of the high-strength aviation aluminum alloy plate, whether omission exists or not is checked, whether the height of each hair button is lower than the plane of the high-strength aviation aluminum alloy plate or not is checked, and if the omission exists, the hair buttons need to be replaced.
And (3) pasting the red copper structural part, the PCB (printed Circuit Board) 7 and the alloy plate assembly together, aligning according to a positioning pin on the red copper structural part and a positioning hole on the alloy plate during pasting, and fixing by using an M3 multiplied by 8 combined screw after pasting, thereby completing assembly.
For a more detailed comparison of the effects before and after implementation, see table 1, table 1 shows the comparison and analysis of the change of the warping rate of the PCB 7, the warping rate of the wafer integrated system 2, the height difference formed by the attachment of the PCB 7 and the wafer integrated system 2, the working temperature of the wafer integrated system 2 before and after liquid cooling and the reliability of electrical connection. As can be seen from table 1, after the PCB 7 is attached and fixed to the rigid board, the warpage of the rigid board is reduced from 0.5% to 0.03%, and the difference in warpage height is only 0.105 mm. The wafer integrated system 2 is provided with the core particles 22, and the warpage of the wafer integrated system to a certain extent exists due to the release of stress when the thermocompression bonding process is used, wherein the warpage rate is about 0.05%, and the height difference is 0.1525 mm. As can be seen from table 1, the warpage of the PCB 7 after being fixed with rigid fitting is slightly better than that of the wafer integrated system 2, which provides a possibility for interconnection of the PCB 7 and the wafer integrated system 2. In addition, the table considers the case that the warping direction of the PCB board 7 is exactly opposite to the warping direction of the wafer 21, and in reality, the warping direction of the PCB board 7 is not completely opposite to the warping direction of the wafer 21, so the compression amount of the fuzz button may be smaller and the reliability of connection is higher.
TABLE 1 comparison of the examples
In summary, the embodiment of the present invention provides a solution to the interconnection and intercommunication problem between the large-sized wafer integrated system 2 and the warped PCB 7, so as to provide a technical support for information exchange and provide a reliable technical support for hybrid integration of the wafer integrated system 2 and the conventional printed circuit integrated system.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (14)
1. An interconnection structure of a wafer integrated system and a top PCB board is characterized by comprising a metal structural member (1), a groove (11) is arranged in the metal structural part (1), a wafer integrated system (2) is arranged in the groove (11), the lower surface of the wafer integrated system (2) and the upper surface of the groove (11) are also provided with heat conduction materials (3), the top end of the metal structural part (1) is connected with a rigid plate (5), the rigid plate (5) is connected with a PCB (7), the PCB (7) is connected with a power module (8) and an I/O module (9), an electrical connection device (10) is arranged in the rigid plate (5), the lower surface of the electrical connection device (10) is connected with the wafer integrated system (2), the upper surface of the electric connecting device (10) is connected with the PCB (7).
2. The wafer integrated system and top PCB interconnection structure of claim 1, wherein the wafer integrated system (2) comprises a wafer (21), core particles (22), metal bumps (23) and fillers (24), wherein a plurality of the core particles (22) are connected to the wafer (21), the metal bumps (23) are connected to the wafer (21) between adjacent core particles (22), and the fillers (24) are disposed between adjacent core particles (22), wafer (21) and metal bumps (23).
3. The wafer integrated system and top PCB interconnection structure of claim 2, wherein the metal bumps (23) are in the shape of a sphere, a hemisphere, a cube or a cylinder.
4. The wafer integrated system and top PCB interconnect structure of claim 2, wherein the filler (24) is an insulating organic, silicon dioxide or silicon nitride.
5. The wafer integrated system and top PCB interconnection structure of claim 2, wherein the electrical connection device (10) comprises an insulating medium (101), an elastic metal connector (102) and a PCB pad (103), a plurality of insulating through holes (51) are disposed in the rigid board (5), the insulating medium (101) is disposed on a sidewall of the insulating through holes (51), the elastic metal connector (102) is disposed inside the insulating medium (101), a bottom end of the elastic metal connector (102) is connected to the metal bump (23), a top end of the elastic metal connector (102) is connected to the PCB pad (103), and the PCB pad (103) is connected to a lower surface of the PCB board (7).
6. The wafer integrated system and top PCB interconnection structure of claim 5, wherein the insulating medium (101) is an insulating paint, metal oxide, resin or organic glue.
7. The wafer integrated system and top PCB interconnection structure of claim 5, wherein the resilient metal connector (102) is a fuzz button, a resilient pin, or a micro spring.
8. The wafer integrated system and top PCB interconnection structure of claim 1, wherein the metal structure (1) is internally provided with a liquid cooling channel (12), and the liquid cooling channel (12) has a serpentine shape.
9. The wafer integrated system and top PCB interconnection structure of claim 1, wherein the thermally conductive material (3) is thermally conductive silicone grease, thermally conductive silicone gel or thermally conductive grease.
10. The wafer integrated system and top PCB interconnection structure of claim 1, wherein the rigid board (5) is a copper board, a steel board, a ceramic board, a glass board or a resin board.
11. The wafer integrated system and top PCB interconnection structure of claim 1, wherein the PCB board (7) is a two-layer or more than two-layer printed circuit board.
12. The wafer integrated system and top PCB interconnection structure of claim 1, wherein the power module (8) comprises a DC-DC module, LDOs, isolation transformers, and a power filter network, the DC-DC module, LDOs, isolation transformers, and power filter network being electrically connected to each other.
13. The wafer integration system and top PCB interconnection structure of claim 1, wherein the I/O module (9) comprises a connector, an interface driver device and a serial-to-parallel converter device, the connector, the interface driver device and the serial-to-parallel converter device being electrically connected to each other.
14. A method for manufacturing an interconnection structure of a wafer integrated system and a top PCB board is characterized by comprising the following steps:
step S1: welding a plurality of core particles (22) on a wafer (21), connecting metal bumps (23) on the wafer (21) between the adjacent core particles (22), wherein the height of each metal bump (23) is not lower than that of each core particle (22), filling fillers (24) among the core particles (22), the wafer (21) and the metal bumps (23) to form a wafer integrated system (2), and grinding the wafer integrated system by a CMP (chemical mechanical polishing) process to expose the metal bumps (23);
step S2: a snake-shaped liquid cooling channel (12) with good sealing performance is manufactured in the metal structural member (1), an input port and an output port of the liquid cooling channel (12) are manufactured, and a groove (11) which is matched with the wafer integrated system (2) is manufactured in the metal structural member (1);
step S3: uniformly coating the heat conduction materials (3) on the bottom in the groove (11), putting the wafer integration system (2) processed in the step S1 into the groove (11), attaching the heat conduction materials (3), compacting and discharging interface air to ensure that the height of the wafer integration system (2) does not exceed the periphery of the groove (11) to form a bottom prefabricated member;
step S4: an insulation through hole (51) is formed in the rigid plate (5), an insulation medium (101) is welded on the inner wall of the insulation through hole (51), the top end of the elastic metal connector (102) penetrates through the insulation through hole (51) and is in contact with the PCB pad (103), the bottom end of the elastic metal connector (102) is attached to the metal bump (23), the top end of the PCB pad (103) is connected with the PCB plate (7), the upper surface of the PCB plate (7) is attached to the power supply module (8) and the I/O module (9), and the rigid plate (5) and the PCB plate (7) are connected to form a top prefabricated part;
step S5: and connecting the bottom prefabricated member and the top prefabricated member to finish the assembly.
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