CN114630494B - Interconnection structure of wafer integration system and top PCB and manufacturing method thereof - Google Patents

Abstract

The invention discloses an interconnection structure between a wafer integrated system and a top PCB board and a manufacturing method thereof, including a metal structural member, wherein a groove is arranged in the metal structural member, and a wafer integrated system is arranged in the groove, so that the The lower surface of the wafer integration system and the upper surface of the groove are also provided with thermally conductive materials, the top of the metal structure is connected to a rigid board, the rigid board is connected to a PCB board, and the PCB board is connected to There are a power module and an I/O module, an electrical connection device is arranged in the rigid board, the lower surface of the electrical connection device is connected to the wafer integrated system, and the upper surface of the electrical connection device is connected to the PCB board. The invention solves the key technical problem of interconnection between the wafer integrated system and the traditional PCB integrated system, especially the problem of interconnection failure caused by the warping of the PCB board, so as to provide a hybrid integration of the wafer integrated system and the traditional printed circuit integrated system Provide reliable technical support.

Description

Interconnection structure of wafer integrated system and top PCB board and manufacturing method thereof

technical field

The present invention relates to the technical field of a wafer integrated system, in particular to an interconnection structure between the wafer integrated system and a top PCB board and a manufacturing method thereof.

Background technique

With the gradual failure of Moore's Law and Dennard's Law of Scaling, the improvement of computing performance by technological progress has slowed down significantly, while the amount of data in the Internet of Everything has exploded exponentially, and the "scissors" gap between data scale and computing power is getting wider and wider. The bigger the integrated circuit is, the "post-Moore era" is ushering in a period of major technological and industrial changes, and a new trend has emerged in the development of the system architecture. At present, software-hardware collaborative computing is becoming a new computing model, centering on application-oriented software definition, and defining hardware systems, network platforms and even infrastructure through software has become a new service model. At the 2018 World Conference on Computer Architecture (ISCA, International Symposium on Computer Architecture), Turing Award winners John L. Hennessy and David A. Patterson also pointed out that domain-specific software and hardware collaborative computing has become a new direction for the development of computer architecture.

In view of the unsustainable problem of Moore's Law, academia and industry mainly use system-in-package (SIP), system-on-package (SOP) or chip-level integration (SOC) technology to expand Moore's Law. The high-density substrate is the physical carrier of SIP integration. Its functions include electrical interconnection between components, transmission of radio frequency, analog, digital and other signals, and can be embedded to integrate some passive components, power dividers, filters, etc. Components provide heat dissipation channels. SIP packaging technology is essentially 2D packaging using multiple chips using flip chip process or wire bonding process. The packaged devices still need to be mounted on the PCB with other devices (such as power management, interface drivers, and I/O interface devices). Collaborative work. Therefore, due to the limitation of SIP's own integration scale and the restriction of some functional integration methods, it is still difficult to comprehensively solve the necessary system requirements such as heat dissipation, power supply, external interconnection and platform integration, and it cannot form an independent system; the essence of SOC technology It is still the chip design technology, which integrates chips with different functions and the same process. It is limited by the chip processing technology and the performance of semiconductor materials. It is difficult for SOC to form a powerful independent system; SOP is for system applications, based on the system motherboard. , components and connectors, heat dissipation structure and other components are integrated into a generalized package with system functions. SOP can load system software and have complete system functions. It is the most reasonable and intuitive integration situation for functional integrated microsystems. The core integration capability of the whole machine and system, but its size is large, and its design concept is still based on traditional assembly technology.

The difference from SIP, SOC and SOP is that the substrate used in the wafer-level system is the entire semiconductor wafer, such as a 2- to 12-inch silicon wafer, the wafer is not diced, the wafer is wired using the RDL process, and the wafer is Active devices, such as switches, operational amplifiers, ADCs, logic cell circuits, etc., are fabricated according to system functions using semiconductor processes. It is also possible to not prepare devices according to the system application requirements, only use RDL wiring, and use the entire wafer to replace the traditional substrate. The on-chip system runs through the entire process of integrated circuit design, processing and packaging, integrating advanced concepts such as prefab assembly and wafer integration. With the significant advantages of wafer-level interconnection such as high bandwidth, low latency, and low power consumption, it is possible to integrate thousands of "prefabricated" particles such as sensing, radio frequency, computing, storage, and communication on a single wafer. Breaking the boundary conditions of existing integrated circuit design methods, realization materials, integration methods, etc., upgrade 2D packaging to 2.5D/3D packaging, expand a single process to a variety of processes, expand silicon-based materials to a variety of heterogeneous substrates, and expand The rigid system structure is upgraded to a flexible software-defined structure, effectively breaking the current chip performance limit and breaking the "ceiling effect" faced by key information infrastructures relying on "stacked" engineering technology routes. Refresh the technical and physical form of traditional equipment or systems, so that the comprehensive technical indicators of the system can obtain continuous gains, and meet the sustainable development needs of new-generation infrastructure such as 5G, big data, cloud platforms, AI, edge computing, and smart networks in the intelligent era. However, restricted by the mechanical strength of the wafer and the RDL wiring rules, the difficulty of the wafer integrated system has encountered unprecedented challenges, especially the key technologies such as power supply and heat dissipation of the wafer integrated system larger than 8 inches have not been effectively solved. The main technical difficulty is how to form a stable and reliable electrical connection between the power supply system and the wafer integrated system, and there is no good solution yet.

The present invention carries out technical innovation for the problem of how to form an effective and reliable interconnection between the wafer integrated system based on the semiconductor packaging process and the PCB circuit board based on the screen printing process. It solves the problem of information interaction between large-size wafers and PCBs.

SUMMARY OF THE INVENTION

In order to solve the above technical problems, the present invention provides an interconnection structure between a wafer integrated system and a top PCB board and a manufacturing method thereof.

The technical scheme adopted in the present invention is as follows:

The interconnection structure of the wafer integrated system and the top PCB board includes a metal structure, a groove is arranged in the metal structure, and a wafer integrated system is arranged in the groove, and the lower surface of the wafer integrated system A thermally conductive material is also provided on the upper surface of the groove, a rigid board is connected to the top of the metal structure, a PCB board is connected to the rigid board, and a power module and an I/O module are connected to the PCB board. , the rigid board is provided with an electrical connection device, the lower surface of the electrical connection device is connected to the wafer integrated system, and the upper surface of the electrical connection device is connected to the PCB board.

Further, the wafer integration system includes a wafer, core particles, metal bumps and fillers, a plurality of the core particles are connected on the wafer, and the metal bumps are connected between adjacent core particles and the filler is arranged between the adjacent core particles, wafers and metal bumps.

Further, the structure of the metal bump is spherical, hemispherical, cube or cylinder.

Further, the filler is insulating organic matter, silicon dioxide or silicon nitride.

Further, the electrical connection device includes an insulating medium, an elastic metal connector and a PCB pad, a plurality of insulating through holes are arranged in the rigid board, and the insulating medium is arranged on the sidewalls of the insulating through holes, and the The inner side of the insulating medium is provided with the elastic metal connector, the bottom end of the elastic metal connector is connected to the metal bump, the top end of the elastic metal connector is connected to the PCB pad, and the PCB pad is connected to the metal bump. The lower surface of the PCB board is connected.

Further, the insulating medium is insulating paint, metal oxide, resin or organic glue.

Further, the elastic metal connector is a wool button, an elastic needle or a micro spring.

Further, a liquid cooling channel is arranged inside the metal structure, and the liquid cooling channel is serpentine.

Further, the thermally conductive material is thermally conductive silicone grease, thermally conductive silicone or thermally conductive grease.

Further, the rigid plate is a copper plate, a steel plate, a ceramic plate, a glass plate or a resin plate.

Further, the PCB board is a printed circuit board with two or more layers.

Further, the power supply module includes a DC-DC module, an LDO, an isolation transformer and a power supply filter network, and the DC-DC module, the LDO, the isolation transformer and the power supply filter network are electrically connected to each other.

Further, the I/O module includes a connector, an interface driving device and a serial-parallel conversion device, and the connector, the interface driving device and the serial-parallel conversion device are electrically connected to each other.

The present invention also provides a manufacturing method of the interconnection structure of the wafer integrated system and the top PCB board, comprising the following steps:

Step S1: Weld several cores on the wafer, and connect metal bumps between adjacent cores, the height of the metal bumps is not lower than the height of the cores, and fill the cores, wafers and metal bumps The material forms a wafer integrated system, and is smoothed by the CMP process to expose the metal bumps;

Step S2: forming a serpentine liquid cooling channel with good sealing performance inside the metal structure, making the input and output ports of the liquid cooling channel, and making a groove in the metal structure that fits with the wafer integration system;

Step S3: the inner bottom of the groove is evenly coated with a thermally conductive material, the wafer integrated system processed in step S1 is loaded into the groove and the thermally conductive material is attached, and the interface air is compressed and discharged so that the height of the wafer integrated system does not exceed the groove the periphery, forming the bottom preform;

Step S4: an insulating through hole is made on the rigid board, and an insulating medium is welded on the inner wall of the insulating through hole, and the top end of the elastic metal connector is passed through the insulating through hole and is in contact with the PCB pad, and the bottom end of the elastic metal connector is connected with the metal Bump bonding, the top of the PCB pad is connected to the PCB board, the upper surface of the PCB board is attached to the power module and the I/O module, and the rigid board is connected to the PCB board to form a top prefab;

Step S5: Connect the bottom prefab and the top prefab to complete the assembly.

The beneficial effects of the invention are: using the bending resistance and flatness of the rigid board to correct and improve the PCB board caused by multiple high-temperature laminations, different residual copper rates on the front and back sides, asymmetric inner layer wiring, and asymmetric via holes. The warpage problem reduces the warpage rate of the PCB board by at least an order of magnitude. Because the wafer integrated system based on the micro-nano process has high processing precision, the line width can be at the nanometer level, and the bonding point is only 10um to 100um, which is 2 orders of magnitude higher than the processing precision of the printed circuit process. The invention carries out interconnection and intercommunication innovation based on the printed circuit process and the micro-nano process, and combines the two process technologies well. As an overall support, it eliminates the damage to the wafer integrated system due to vibration and extrusion, and significantly improves the reliability of the overall assembly structure. By fixing the wafer integrated system with thermal grease, on the one hand, the interface thermal resistance between the lower surface of the wafer integrated system and the upper surface of the groove of the metal structure is reduced, which can significantly improve the thermal diffusion capacity of the wafer integrated system. Thermal grease is a viscous paste that can well buffer the compressive stress transmitted from the elastic metal connector to the wafer integrated system, which can significantly improve the chip integrated system's resistance to chipping. The invention solves the key technical problem of interconnection between the wafer integrated system and the traditional PCB integrated system from the technical level, especially the problem of interconnection failure caused by the warping of the PCB board; the wafer integrated system is solved from the assembly and reliability levels. Connection and assembly technology with peripheral circuits (such as power management, I/O interface); from the perspective of thermal management, it solves the heat conduction and heat dissipation problems of high-density thermal power in wafer integrated systems. Therefore, the present invention can provide technical support for information exchange, and provide reliable technical guarantee for the hybrid integration of the wafer integrated system and the traditional printed circuit integrated system.

Description of drawings

Fig. 1 is the structural representation of the present invention;

2 is a top view of a metal structure according to an embodiment of the present invention;

FIG. 3 is a left side view of a metal structure according to an embodiment of the present invention;

FIG. 4 is a schematic diagram of a liquid cooling channel according to an embodiment of the present invention.

Description of reference numerals

1-metal structure, 11-groove, 12-liquid cooling channel, 2-wafer integrated system, 21-wafer, 22-die, 23-metal bump, 24-filler, 3-thermally conductive material, 4- Countersunk head bolt, 5- Rigid plate, 51- Insulation through hole, 6- Bolt, 7- PCB board, 8- Power module, 9- I/O module, 10- Electrical connection device, 101- Insulation medium, 102 -Elastic metal connector, 103-PCB pad.

Detailed ways

The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

Referring to FIG. 1 , the interconnection structure of the wafer integrated system and the top PCB board includes a metal structural member 1, and a groove 11 is arranged in the metal structural member 1, and a wafer integrated system 2 is arranged in the groove 11. The lower surface of the wafer integration system 2 and the upper surface of the groove 11 are further provided with a thermally conductive material 3, the top of the metal structure 1 is connected with a rigid board 5, and the rigid board 5 is connected with a PCB board 7. A power supply module 8 and an I/O module 9 are connected to the PCB board 7, an electrical connection device 10 is arranged in the rigid board 5, and the lower surface of the electrical connection device 10 is connected to the wafer integrated system 2 , the upper surface of the electrical connection device 10 is connected to the PCB board 7 .

The wafer integration system 2 includes a wafer 21 , a core 22 , a metal bump 23 and a filler 24 . A number of the cores 22 are connected to the wafer 21 , and adjacent cores 22 are connected with a plurality of cores 22 . The filler 24 is disposed between the metal bumps 23 adjacent to the die 22 , the wafer 21 and the metal bumps 23 .

The structure of the metal bumps 23 is spherical, hemispherical, cubic or cylindrical.

The filler 24 is an insulating organic material, silicon dioxide or silicon nitride.

The electrical connection device 10 includes an insulating medium 101 , an elastic metal connector 102 and a PCB pad 103 , a plurality of insulating through holes 51 are provided in the rigid board 5 , and the sidewalls of the insulating through holes 51 are provided with the insulating through holes 51 . Medium 101, the inner side of the insulating medium 101 is provided with the elastic metal connector 102, the bottom end of the elastic metal connector 102 is connected to the metal bump 23, and the top end of the elastic metal connector 102 is connected to the PCB pads 103 , the PCB pads 103 are connected to the lower surface of the PCB board 7 .

The insulating medium 101 is insulating paint, metal oxide, resin or organic glue.

The elastic metal connector 102 is a wool button, an elastic needle or a micro spring.

A liquid cooling channel 12 is provided inside the metal structure 1, and the liquid cooling channel 12 is serpentine.

The thermally conductive material 3 is thermally conductive silicone grease, thermally conductive silicone or thermally conductive grease.

The rigid plate 5 is a copper plate, a steel plate, a ceramic plate, a glass plate or a resin plate.

The PCB board 7 is a printed circuit board with two or more layers.

The power supply module 8 includes a DC-DC module, an LDO, an isolation transformer and a power supply filter network, and the DC-DC module, the LDO, the isolation transformer and the power supply filter network are electrically connected to each other.

The I/O module 9 includes a connector, an interface driving device and a serial-parallel conversion device, and the connector, the interface driving device and the serial-parallel conversion device are electrically connected to each other.

A manufacturing method of an interconnection structure of a wafer integrated system and a top PCB board, comprising the following steps:

Step S1: Weld several cores 22 on the wafer 21, and connect metal bumps 23 between adjacent cores 22. The height of the metal bumps 23 is not lower than the height of the cores 22. Filling fillers 24 between the metal bumps 23 to form a wafer integrated system 2, and smoothed by a CMP process to expose the metal bumps 23;

Step S2 : making a serpentine liquid cooling channel 12 with good sealing performance inside the metal structure 1 , and making the input and output ports of the liquid cooling channel 12 , and making the inside of the metal structure 1 to fit the wafer integration system 2 . groove 11;

Step S3: the inner bottom of the groove 11 is evenly coated with the thermally conductive material 3, the wafer integrated system 2 processed in step S1 is loaded into the groove 11 and the thermally conductive material 3 is attached, and the interface air is compressed and discharged, so that the wafer integrated system 2. The height does not exceed the periphery of the groove 11 to form a bottom prefab;

Step S4: An insulating through hole 51 is formed on the rigid board 5, and an insulating medium 101 is welded on the inner wall of the insulating through hole 51, and the top end of the elastic metal connector 102 is passed through the insulating through hole 51 and contacts with the PCB pad 103, the elastic metal The bottom end of the connector 102 is attached to the metal bump 23, the top end of the PCB pad 103 is connected to the PCB board 7, the upper surface of the PCB board 7 is attached to the power module 8 and the I/O module 9, and the rigid board 5 is attached to the I/O module 9. The PCB board 7 is connected to form a top prefab;

Step S5: Connect the bottom prefab and the top prefab to complete the assembly.

Example 1

Referring to Fig. 2, the red copper structural parts are manufactured by a machining process, and the external dimensions of the red copper structural parts are 400 mm × 400 mm × 20 mm.

Referring to FIG. 3 , the liquid cooling channel 12 is processed inside the red copper structure. The cross-section of the flow channel is a square with a side length of 4 mm, which is serpentine and has a wall thickness of 4 mm. The copper structural parts are processed with enough M3 threaded holes, the spacing between adjacent threaded holes is 35-40mm, the hole depth is 9-10mm, the processing height on the four corners is 1.5mm, and the diameter is 1.5mm. Eight M4 threaded through holes are machined at 5mm of the pin, and a groove 11 matching the size of the 12-inch wafer is milled out of the copper structure. The depth of the groove 11 is 1.2mm-1.22mm, the inner diameter is 304.81mm, and the inner wall is Bumps that match the wafer alignment marks to fix the wafer against rotation, see Figure 4.

When the top PCB board 7 is connected to the wafer integration system 2, the distance between the core particles 22 in the wafer integration system 2 must be greater than 350um. On this basis, metal deposition and electroplating processes are used to prepare a diameter of 100- 150um, height 150um copper pillar, and use organic material molding to fix, the thickness is 160-200um, and then use CMP process to smooth out the copper pillar.

The back of the processed wafer integration system 2 is evenly coated with thermally conductive silicone grease with a coating thickness of about 250um, and the wafer integration system 2 is pasted into the groove of the copper structure, compacted and leveled, and the wafer The height of the integrated system 2 is not higher than the groove boundary.

Machined high-strength aviation aluminum alloy plate with a shape of 400mm×400mm×1.7mm, and then according to the distribution of copper pillars on the wafer integration system 2, precise machining of 0.3mm diameter insulated through holes that exactly match the number and position of the copper pillars ;Process the through-holes whose quantity and position are completely matched with the M3 threaded holes of the copper structural parts and the positioning holes that match the positioning pins with a diameter of 1.5mm, and the hole accuracy is better than ±10um; Processing and the position and quantity of the 7 holes of the PCB to be fixed match M2.5 countersunk head screw through hole. Finally, the surface and via holes of the machined high-strength aviation aluminum alloy plate are insulated by thermal oxidation and other processes.

Assemble the power supply module 8, I/O module 9, and drive circuit on the front, and the PCB board 7 with only exposed pads on the back and the processed high-strength aviation aluminum alloy plate. Use several M2.5 screws and matching shrapnel and gaskets. , nut fixed to eliminate the warpage of the PCB board 7. The main technical parameters of PCB board 7 are 350mm×350mm×1.5mm, the board is Panasonic M6, the number of layers is 12, and the surface is gold-plated.

Insert a number of wool buttons with a diameter of 10 mil (0.254 mm) and a length of 70 mil (1.778 mm) into the insulating through hole 51 with a diameter of 0.3 mm, so that one end of the wool button is in contact with the PCB pad 103, and the other end is slightly higher than the high-strength aviation aluminum. Alloy plate plane, and pay attention to check whether there are omissions, whether there are hair buttons lower than the plane of the high-strength aviation aluminum alloy plate, if so, the hair buttons need to be replaced.

Laminate the copper structure with the PCB board 7 and the alloy plate assembly. When laminating, align the positioning pins on the copper structure and the positioning holes on the alloy plate. After the lamination is completed, use M3×8 combination screws. fixed to complete the assembly.

For a more detailed comparison of the effects before and after implementation, see Table 1. In Table 1, the warpage rate of PCB board 7, the warpage rate of wafer integration system 2, and the change in height difference formed by the bonding of PCB board 7 and wafer integration system 2, using liquid cooling The working temperature and electrical connection reliability of the wafer integrated system 2 before and after heat dissipation are compared and analyzed. It can be found from Table 1 that after the PCB board 7 is attached and fixed to the rigid board, its warpage rate is reduced from 0.5% to 0.03%, and the warpage height difference is only 0.105mm. While the wafer integration system 2 is provided with the core particles 22 , there is also a certain degree of warpage due to the release of stress during the thermocompression bonding process. The warpage rate is about 0.05%, and the height difference is 0.1525mm. It can also be seen from Table 1 that the warpage degree of the PCB board 7 after being fixed with rigid bonding is slightly better than that of the wafer integrated system 2, which provides a possibility for the interconnection between the PCB board 7 and the wafer integrated system 2. In addition, the table considers the case where the warping direction of the PCB board 7 and the wafer 21 are exactly opposite. In fact, the warping direction of the PCB board 7 is not completely opposite to the warping direction of the wafer 21. Possibly smaller and more reliable connection.

Table 1 Comparison before and after the present embodiment

To sum up, the embodiment of the present invention provides a solution to the interconnection problem between the large-size wafer integrated system 2 and the printed circuit system of the warped PCB board 7, thereby providing technical support for information exchange, and providing a technical support for the wafer integrated system 2 and the warped PCB board 7. Hybrid integration of traditional printed circuit integrated systems provides reliable technical support.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims (14)

1. An interconnection structure between a wafer integrated system and a top PCB board, characterized in that it comprises a metal structure (1), wherein a groove (11) is provided in the metal structure (1), and the groove (11) A wafer integration system (2) is provided inside, the lower surface of the wafer integration system (2) and the upper surface of the groove (11) are further provided with a thermally conductive material (3), and the metal structure A rigid board (5) is connected to the top of the piece (1), a PCB board (7) is connected to the rigid board (5), and a power supply module (8) and an I/O module are connected to the PCB board (7). (9), the rigid board (5) is provided with an electrical connection device (10), the lower surface of the electrical connection device (10) is connected to the wafer integration system (2), the electrical connection device (10) ) to the upper surface of the PCB board (7). 2. The interconnection structure between a wafer integrated system and a top PCB board according to claim 1, wherein the wafer integrated system (2) comprises a wafer (21), a die (22), a metal bump A point (23) and a filler (24), a plurality of the core particles (22) are connected on the wafer (21), and the wafers (21) between the adjacent core particles (22) are connected with For the metal bumps (23), the fillers (24) are arranged between adjacent core particles (22), wafers (21) and metal bumps (23). 3 . The interconnection structure between the wafer integrated system and the top PCB board according to claim 2 , wherein the metal bumps ( 23 ) are in the form of spheres, hemispheres, cubes or cylinders. 4 . 4 . The interconnection structure between the wafer integrated system and the top PCB board according to claim 2 , wherein the filler ( 24 ) is an insulating organic substance, silicon dioxide or silicon nitride. 5 . 5. The interconnection structure between a wafer integrated system and a top PCB board according to claim 2, wherein the electrical connection device (10) comprises an insulating medium (101), an elastic metal connector (102) and a PCB A pad (103), a plurality of insulating through holes (51) are arranged in the rigid board (5), and the insulating medium (101) is arranged on the sidewall of the insulating through hole (51), and the insulating medium ( 101) The elastic metal connector (102) is provided on the inner side, the bottom end of the elastic metal connector (102) is connected to the metal bump (23), and the top end of the elastic metal connector (102) is connected The PCB pad (103) is connected to the lower surface of the PCB board (7). 6. The interconnection structure between the wafer integrated system and the top PCB board according to claim 5, wherein the insulating medium (101) is insulating paint, metal oxide, resin or organic glue. 7 . The interconnection structure between the wafer integrated system and the top PCB board according to claim 5 , wherein the elastic metal connector ( 102 ) is a wool button, an elastic pin or a micro spring. 8 . 8. The interconnection structure between a wafer integrated system and a top PCB board according to claim 1, wherein a liquid cooling channel (12) is provided inside the metal structural member (1), and the liquid cooling channel ( 12) In the shape of a snake. 9 . The interconnection structure between the wafer integrated system and the top PCB board according to claim 1 , wherein the thermally conductive material ( 3 ) is thermally conductive silicone grease, thermally conductive silicone or thermally conductive grease. 10 . 10 . The interconnection structure between the wafer integrated system and the top PCB board according to claim 1 , wherein the rigid board ( 5 ) is a copper board, a steel plate, a ceramic board, a glass board or a resin board. 11 . 11. The interconnection structure between the wafer integrated system and the top PCB board according to claim 1, wherein the PCB board (7) is a two-layer or more than two-layer printed circuit board. 12. The interconnection structure between a wafer integrated system and a top PCB board according to claim 1, wherein the power module (8) comprises a DC-DC module, an LDO, an isolation transformer and a power filter network, so The DC-DC module, LDO, isolation transformer and power filter network are electrically connected to each other. 13. The interconnection structure between a wafer integrated system and a top PCB board according to claim 1, wherein the I/O module (9) comprises a connector, an interface driving device and a serial-to-parallel conversion device, and the The connector, the interface driving device and the serial-parallel conversion device are electrically connected to each other. 14. A method for manufacturing an interconnection structure of a wafer integrated system and a top PCB, comprising the following steps: Step S1: Soldering several cores (22) on the wafer (21), and connecting metal bumps (23), metal bumps (23) on the wafer (21) between adjacent cores (22) The height is not lower than the height of the core particles (22), and the filler (24) is filled between the core particles (22), the wafer (21) and the metal bumps (23) to form a wafer integrated system (2), and is passed through CMP The process is smoothed to expose the metal bumps (23); Step S2: make a serpentine liquid cooling channel (12) with good sealing inside the metal structure (1), and make the input and output ports of the liquid cooling channel (12). The grooves (11) of the wafer integration system (2) fit with each other; Step S3: The inner bottom of the groove (11) is evenly coated with the thermally conductive material (3), the wafer integrated system (2) processed in step S1 is loaded into the groove (11) and the thermally conductive material (3) is attached, and the Exhaust the interface air so that the height of the wafer integration system (2) does not exceed the periphery of the groove (11) to form a bottom preform; Step S4: An insulating through hole (51) is made on the rigid board (5), an insulating medium (101) is welded on the inner wall of the insulating through hole (51), and the top end of the elastic metal connector (102) is passed through the insulating through hole ( 51) and contact with the PCB pad (103), the bottom end of the elastic metal connector (102) is attached to the metal bump (23), the top of the PCB pad (103) is connected with the PCB board (7), the PCB board The upper surface of (7) is attached to the power module (8) and the I/O module (9), and the rigid board (5) is connected with the PCB board (7) to form a top prefab; Step S5: Connect the bottom prefab and the top prefab to complete the assembly.

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