CN114628348A - 悬浮的半导体管芯 - Google Patents
悬浮的半导体管芯 Download PDFInfo
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- CN114628348A CN114628348A CN202111526164.4A CN202111526164A CN114628348A CN 114628348 A CN114628348 A CN 114628348A CN 202111526164 A CN202111526164 A CN 202111526164A CN 114628348 A CN114628348 A CN 114628348A
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- semiconductor die
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Abstract
本申请题为“悬浮的半导体管芯”。在示例中,电子器件包括印刷电路板(PCB)(100)、延伸穿过PCB的孔(132)和通过铝键合线(140)悬浮在孔上方的半导体管芯(138)。半导体管芯与孔竖直对齐,并且键合线耦合到PCB。
Description
背景技术
在制造过程中,半导体管芯通常安装在引线框架的管芯焊盘上,并且线键合、夹或其他方式耦合到引线框架的引线。其他器件可以类似地安装在管芯焊盘或另一个引线框架焊盘上。该组件随后被例如环氧树脂的模具化合物覆盖,以保护该组件免受潜在的破坏性物理损伤、潮湿和其他有害因素的影响。从其引线框架条上分离后,完成的组件被称为半导体封装件,或更简单地称为封装件。导电端子(例如,引线)暴露于封装件的外部,并且用于将经封装的半导体管芯电耦合到封装件外面的器件。
发明内容
在示例中,一种电子器件,其包括印刷电路板(PCB)、延伸穿过PCB的孔以及通过铝键合线悬浮在孔上方的半导体管芯。半导体管芯与孔竖直对齐,并且键合线耦合到PCB。
在示例中,一种方法,其包括:使用半导体管芯覆盖印刷电路板(PCB)中的孔的第一端,该孔延伸穿过PCB;向与第一端相对的孔的第二端施加吸力,以将半导体管芯保持在适当位置;将铝键合线耦合到半导体管芯和PCB;以及通过停止施加吸力使半导体管芯提升在PCB上方。
附图说明
对于各种示例的详细描述,现在将参考附图,其中:
图1A1至图1G3描绘根据各种示例的用于将半导体管芯悬浮在印刷电路板(PCB)上方的工艺流程。
图2是根据各种示例的用于将半导体管芯悬浮在PCB上方的方法的流程图。
图3A1至图3I3描绘根据各种示例的用于将半导体管芯悬浮在半导体封装件内的另一管芯上的工艺流程。
图4是根据各种示例的用于将半导体管芯悬浮在半导体封装件内的另一管芯上方的方法的流程图。
图5是根据各种示例的电子器件的示意性框图,该电子器件包括悬浮的半导体管芯。
具体实施方式
某些类型的高精度半导体管芯对机械和热影响特别敏感,例如振动和温度波动。这种管芯的代表性示例包括生成参考电压信号的那些管芯以及具有传感器和运算放大器电路的管芯。半导体封装对于这种高精度管芯的操作是不利的。例如,半导体管芯、半导体封装模具化合物和引线框架部件(例如,管芯焊盘)之间的热膨胀系数(CTE)的失配可将应力引入半导体管芯。在一些情况下,半导体封装件与半导体管芯之间的热接触可允许环境温度变化传递到半导体管芯并影响半导体管芯。然而,消除半导体封装是没有帮助的,因为其可能将管芯暴露于其它有害的环境影响,例如潮湿和物理损伤。
本公开描述悬浮的半导体管芯的各种示例。具体来说,本公开描述使用耦合到PCB的键合线悬浮在PCB上方的半导体管芯的各种示例。在一些示例中,键合线由铝构成,并且因此具有弹性、类似弹簧的性质,这意味着键合线在被外部机械力扭曲后释放时具有返回到其原始形状的能力。例如,机械振动可能暂时扭曲键合线和悬浮的半导体管芯的位置,但是键合线的弹性使悬浮的半导体管芯返回到其原始位置。此外,键合线具有热绝缘性质(例如,相对大的线长度与线直径的比率),其减轻从PCB到悬浮的半导体管芯的热传递。这样,在不使用封装的情况下,保护半导体管芯免受机械和热损伤。因此,悬浮的半导体管芯被暴露,意味着半导体管芯未被包括在半导体封装件内部(例如,未被模具化合物覆盖)。在一些示例中,悬浮的半导体管芯悬浮在半导体封装件内部,并且半导体封装件可以使用例如焊料凸点安装在PCB上。具体地,在这样的示例中,半导体封装件可以包括在管芯焊盘上的第一半导体管芯和通过耦合到第一半导体管芯的键合线悬浮在第一半导体管芯上方的第二悬浮的半导体管芯。第一半导体管芯和第二半导体管芯使用键合线彼此耦合并通信,并且第一半导体管芯经由将第一半导体管芯耦合到半导体封装件的导电端子(例如,引线)的附加键合线耦合到其它电路并与其它电路通信。现在参考附图来描述这样的悬浮的半导体管芯的示例以及制造这样的悬浮的半导体管芯的方法的示例。
图1A1至图1G3描绘了根据各种示例的用于将半导体管芯悬浮在PCB上方的工艺流程。图2是根据各种示例的用于将半导体管芯悬浮在PCB上方的方法200的流程图。因此,现在结合图2的示例方法200来描述图1A1至图1G3。
方法200开始于使用半导体管芯覆盖印刷电路板(PCB)中的孔的第一端,其中孔延伸穿过PCB(202)。图1A1示出了示例PCB 100。PCB 100可以包括延伸穿过PCB 100的厚度(在一些示例中,其可以在0.05英寸-0.15英寸的范围内)的孔132。在示例中,孔132具有圆柱形形状,具有圆形或卵形水平横截面,但也考虑其它横截面形状(例如,矩形)。在示例中,孔132的直径(例如,0.05英寸-0.15英寸)不大于将如本文所描述的被悬浮的半导体管芯(例如,下文所描述的半导体管芯138)的最小尺寸。
在示例中,PCB 100包括PCB 100的表面上和PCB 100内的多个金属层(例如,铜层、镀金铜层)。例如,如图所示,PCB 100可以包括表面101和表面103,其中表面101具有定位在其上的金属层102、104、106、108、110和112,并且其中表面103具有定位在其上的金属层130。另外,PCB 100可包括在PCB 100内(例如,在表面101、103之间)的金属层。例如,PCB100可以包括金属层122、124、126和128。此外,PCB 100可以包括一个或多个金属导通孔,例如,导通孔114、116、118和120。导通孔114、116、118和120可以将PCB 100的不同金属层相互连接。例如,如图所示,导通孔114将金属层104和124耦合在一起。PCB 100的金属层和导通孔的具体形状、图案和/或位置可以根据目标设计或应用而变化。然而,在至少一些示例中,表面101上的金属层中的至少一些是以对称图案布置的。例如,如图1A2的俯视图所示,金属层102、104和106是以圆形图案布置的。当通过耦合到金属层的键合线将半导体管芯以对称图案悬浮在表面101上方时,因为对称图案致使机械力(例如,重力)在支持半导体管芯的键合线之间大致均匀分布,所以这样的对称(例如,圆形)图案是有用的。如下文更详细描述的,在一些示例中,金属层的源可以以有助于使悬浮的半导体管芯与有害的外部影响绝缘的图案布置。
图1B是定位在平台134上的PCB 100的剖面横截面图。该平台134包括与孔132竖直对齐的孔136。例如,竖直轴线可以延伸穿过孔136和孔132两者。在示例中,孔136延伸穿过平台134的厚度。在示例中,孔136具有圆柱形形状,具有圆形或卵形横截面,但也可考虑其他横截面形状(例如,矩形)。在示例中,孔136的长度等于平台134的厚度。在示例中,孔136的直径约为0.5英寸。在示例中,孔136的直径相对于PCB 100的尺寸来说足够大,使得当对孔136的底端施加真空时,PCB 100被保持在适当位置中。在其他示例中,PCB 100被附接到平台134上(例如通过使用粘合剂或夹子),并且随后可以使用合适的材料(例如移除粘合剂的溶剂)将PCB 100从平台134上移除。还考虑了用于将PCB 100附接到平台134的其他机制,例如,使用机械连接机制(如夹子、螺丝等)。
图1C1是图1B的结构的剖面横截面图,但是增加了位于PCB 100的表面101上的半导体管芯138。特别地,如图所示,半导体管芯138可以位于PCB 100的表面101上并覆盖孔132。在示例中,半导体管芯138在孔132的上方居中,但本公开的范围不限于此。在示例中,半导体管芯138位于表面101上,而没有附接到表面101。图1C2是图1C1的结构的俯视图。
图2的方法200还包括将吸力(例如负气压)施加到与第一端相对的孔的第二端,以将半导体管芯保持在适当位置中(204)。图1D描绘了图1C1的结构,但在孔136的远离PCB100的一端施加真空144。在示例中,真空144在孔136周围形成密封,并经由孔136、132在半导体管芯138上产生吸力。以这种方式,真空144使半导体管芯138保持在适当位置中,并在随后的线键合期间减少或消除半导体管芯138的移动。将半导体管芯138保持在适当的位置中不仅有利于促进形成线键合的准确性,而且还有利于通过将用于形成线键合的能量引导到线键合本身来提高形成线键合的能效,如果半导体管芯138有移动,则可能无法实现。以这种方式,线键合被更准确地放置,并且是比其他情况下更高质量的键合。虽然具体的实施细节可以变化,但在一个示例中,在大气压力为14.7磅/平方英寸的环境中,可以经由直径约为0.15英寸的孔136施加1托(Torr)的真空压力,导致半导体管芯138上的向下的力约为0.25磅。因此,施加在半导体管芯138上的向下的力是大气压力(例如,760托)、由真空144施加的压力(其范围可以在大约1托-10托之间)的差和暴露在孔136上的半导体管芯138的面积之间的函数。
方法200还包括将铝键合线耦合到半导体管芯和PCB(206)。图1E1描绘了图1D的结构,但应用了键合线140。在示例中,键合线140将半导体管芯138(例如,半导体管芯138的有源表面139上的键合焊盘,例如在其上或在其中形成集成电路的表面)耦合到PCB 100的表面101上的金属层。在示例中,键合线140由铝组成,因为铝具有弹性特性,这意味着铝键合线140中的每个在半导体管芯138上提供了残余向上的弹簧力。例如,键合线140的杨氏模量约为69GPa-70 GPa。在其他示例中,可以使用杨氏模量约为79GPa的金来代替铝。其他提供类似弹性特性的材料也可以用来代替铝。在示例中,键合线140的最大直径约为2密耳,而在其他示例中,因为较细的键合线140可以减轻从PCB 100到半导体管芯138的热传递,键合线140的最大直径约为1密耳。在一些示例中,键合线140中的每个具有范围从20,000摄氏度/瓦和更高的热阻,其中较高的热阻值有利于实现下文描述的特定热效应。
在示例中,铝的热导率为225W/mk,因此对于具有1密耳直径和200密耳长度的铝键合线140,其中半导体管芯138和PCB 100之间的温差在55摄氏度范围内,该键合线140具有约46,000摄氏度/瓦的等效热阻。在示例中,键合线140使用楔形键合技术(例如,利用铝)键合到半导体管芯138和PCB 100,但是也可以考虑其他技术,例如球键合技术。在示例中,键合线140的长度约为100密耳-300密耳,以实现下文描述的特定热效应。在示例中,键合线140具有适当的长度,使得在关闭来自真空144的吸力之后,半导体管芯138被悬浮在PCB100上方的一定高度处,从而排除对PCB 100的撞击(如果PCB 100被推挤或移动)。在示例中,键合线140被键合以具有不超过大约80密耳的环高,因为当使用帽(例如下面描述的帽)来覆盖键合线140时,大于该高度的环高可能具有不足的间隙空间。在一些示例中,鉴于半导体管芯138的重量(或质量),应当使用足够数量的键合线140,较大数量的键合线140在这方面是有帮助的,并且半导体管芯138的较小重量(或质量)在这方面也是有帮助的。
图1E2描绘了图1E1的结构的俯视图。如图1E2所示,在一些示例中,键合线140以对称图案布置,例如圆形图案。这样的对称图案促进了机械力(例如,对半导体管芯138的引力;PCB 100的移动(例如,振动)或推挤)在各种键合线140之间的均匀分布。相反,不对称图案可能会导致机械力在各种键合线140上分布不均,其中一些键合线140接收不成比例的大量机械力,从而被损坏或以其他方式受到损害。另外,键合线140之间的对称图案可能是有益的,因为其促进每个键合线140中大致相同的热通量,导致远离半导体管芯138的键合线140的末端处的温度大致相同。因此,在传给表面101上的金属层的热通量方面,键合线140之间不存在明显的差异。此外,PCB 100的表面101上的金属层之间的对称图案可能是有益的,因为其促进金属层之间大致相等的导热性,以抵消由于可能使用异种金属而产生的潜在热电效应。表面101上的各种键合位置之间大致均匀的温度,可以通过PCB 100上和PCB100中的各种金属层的存在来促进。
键合线140的对称图案对于半导体管芯138也是有益的。因为半导体管芯138是悬浮的,所以来自半导体管芯138的全部或几乎全部热耗散通过键合线140发生。键合线140的对称图案促进从半导体管芯138的中心到半导体管芯138的边缘的均匀热流。半导体管芯138上的热通量和温度梯度的知识和预测性使得电路设计者能够在半导体管芯138上定位部件(例如晶体管和无源部件),以便减轻温度梯度对电性能的干扰。
此外,对于高精度器件,温度差异可能导致热效应,例如,当铝键合线140和铜PCB迹线(例如,异种金属)一起使用时,在键合线140的末端。当一对键合线140用来传送信号时,例如精确的电压,每一端上的热电偶电压应当相同,使得它们将抵消。如果键合线140的长度相同,并且每根键合线并排并具有相同的热通量,则热电偶电压相同并且两个键合线140的末端处的电压差没有热电偶误差。
为了促进键合线140的对称图案,键合线140所耦合的表面101上的金属层也可以布置成对称(例如,圆形)图案。例如,金属层104、106可按图1E2所示的圆形图案布置,其中金属层104耦合到金属层106以外的其他金属层和导通孔,从而创建两个单独的电通路。以类似的方式,图1E2所示的其余金属层107也可以上述的对称图案布置,金属层104、106以及每个金属层107可以耦合到不同的导通孔、其他金属层等,以形成多个单独的电通路。以这种方式,键合线140中的每个为半导体管芯138上的不同键合焊盘提供单独的电通路。在一些示例中,键合线140中的一个或多个是不导电的键合线,这意味着其功能作用是机械支撑,而不是像其余键合线140那样在半导体管芯138和PCB 100之间传导电信号。表面101上的金属层104、106、107的其他对称图案,如矩形图案和卵形图案,都被考虑到并包括在本公开的范围内。
方法200包括通过停止施加吸力使半导体管芯提升在PCB的上方(208)。图1F1描绘了图1E1的结构,除了平台134和真空144被移除。因为平台134和真空144被移除,所以在孔132中没有施加吸力,因此半导体管芯138不再被保持在抵靠PCB 100的表面101的适当的位置中。作为结果,如上文所解释的,具有类似弹簧特性的铝键合线140使半导体管芯138提升在表面101的上方,并悬浮在PCB 100的表面101的上方。在一些示例中,可以关闭真空144以允许半导体管芯138提升,并在半导体管芯138提升后,真空144可以施加正压(例如,在高于大气压力0.25PSI-5PSI的范围内)以精确调整半导体管芯138的位置。可替代地或另外地,可以将管芯调整工具插入孔136、132中,以手动调整半导体管芯138的位置。在一些示例中,半导体管芯138被竖直地定位在孔132的上方并与之对齐,使得竖直轴线延伸穿过孔132和半导体管芯138(例如,半导体管芯138的中心)两者。图1F2是图1F1的结构的俯视图。图1F3是图1F1的结构的透视图。
图2的方法200还包括提供惰性气氛(210),并使用帽覆盖半导体管芯和孔(212)。图1G1描绘了图1F1的结构的横截面剖视图,但如图所示增加了帽154、156。特别是,在帽154、156耦合到PCB 100之前,在半导体管芯138和PCB 100周围引入惰性气氛。例如,可以使用回充惰性气体(如氮气或氩气)的室。在已经引入惰性气氛后,如图所示,帽154耦合到PCB100的表面101,使其覆盖半导体管芯138和孔132。类似地,在已经引入惰性气氛后,帽156耦合到表面103,使其覆盖孔132。也可以使用其他密封技术。
在示例中,帽154、156由任何合适的非有机材料(例如金属(例如,铜)或陶瓷)组成和/或涂覆(例如,镀)。因为金属防止有害的环境影响渗透并因此有利于气密密封,所以任何合适的金属都可以用于帽154、156。在示例中,帽154、156是使用挤压工艺形成的。在示例中,帽154、156中的每个的最小厚度为6密耳,以促进上述的防渗性,尽管在其他示例中,可以使用更薄的帽,同时仍然可以实现气密性。在示例中,尽管其他粘合剂和技术被考虑并包括在本公开的范围内,帽154、156使用回流焊工艺耦合到PCB 100。在示例中,帽154、156使用共晶焊料密封被耦合到PCB 100。通过如上所描述的引入惰性气氛,并随后将帽154、156耦合到PCB 100,由帽154、156覆盖的在孔132内的体积158是惰性的,并几乎完全与周围环境气密密封。具体地,这种气密密封由帽154、156和PCB 100上的以及PCB中的各种金属层提供。为了提高气密性,PCB 100上的和PCB 100中的金属层可以具有1.4密耳的最小厚度。在PCB 100中的金属层之间可能存在没有被金属密封的通路,例如通路161。这样的通路代表了暴露在帽154、156周围环境中的次要但可能的途径。然而,为了减轻这种潜在的暴露途径,在一些示例中,PCB 100由非有机材料组成,例如陶瓷,其比其他PCB材料更能促进气密性,例如环氧树脂(例如,通过减轻环氧树脂空隙以及经由PCB 100放气)。另外,为了减轻这种潜在的暴露途径,PCB 100上的和/或PCB 100中的金属层可以被设计为使得非密封通路(例如,非金属密封通路161)尽可能长,同时仍然满足相关设计规范。图1G2是图1G1的结构的俯视图。图1G3是图1G1的结构的透视图。
在示例中,PCB 100和半导体管芯138之间的间隙150可以是最小50密耳,以防止PCB 100和半导体管芯138之间由于移动、推挤等引起的撞击。在示例中,帽154和键合线140之间的间隙152可以是最小50密耳,以防止帽154和键合线140之间由于移动、推挤等引起的撞击。如上所述,为了实现这样的间隙,键合线140的长度可以在从大约100密耳到大约300密耳的范围内,并且在吸力被关闭之前键合线140的环高可以是大约80密耳。通过使用适当大小的帽154、156,也可以促进这种间隙。在示例中,帽154的深度在从180密耳到300密耳的范围内,其中较浅的帽154提供空间占用少的优点,并且较深的帽154提供与键合线140的间隙更大的优点。在一些示例中,帽156对PCB 100的下层导体有间隙要求,并因此应使用最小的实用帽深度,例如大约50密耳。
在一些示例中,孔132可以使用合适的非有机材料,例如金属或陶瓷直接密封。例如,可以使用位于表面101上、表面103上或表面101和103两者上的非有机材料层来密封孔132。在示例中,孔132可以部分或全部使用不同于组成PCB 100的材料(例如,非有机材料,如焊料)来填充。在孔132被密封或至少部分填充的示例中,帽156可以省略。当密封或至少部分填充时,孔132在本文中仍可被称为孔。
图3A1至图3I3描绘了根据各种示例的用于将半导体管芯悬浮在半导体封装件内的另一管芯上方的工艺流程。图4是根据各种示例的用于将半导体管芯悬浮在半导体封装件内的另一管芯上方的方法400的流程图。因此,图3A1至图3I3和图4现在结合描述。
方法400开始于将第一半导体管芯定位在半导体封装件的开放腔中(402)。图3A1描绘了包括开放腔301和导电端子302(例如,四方扁平无引线(QFN)型导电端子)的开放腔半导体封装件300的横截面剖视图。封装件300包括管芯焊盘304和沉积在管芯焊盘304上的粘合剂306。图3A2描绘了图3A1的结构的俯视图。粘合剂306可以包括例如环氧树脂。
图3B1描绘了图3A1的结构,但增加了使用粘合剂306耦合到管芯焊盘304的半导体管芯308。管芯放置工具310可用于在管芯焊盘304上正确定位半导体管芯308。在一些示例中,半导体管芯308是中介层管芯,这意味着其有源表面不包含集成电路,但其可能包括金属层,以促进另一个半导体管芯和导电端子302之间的电信号的路由。在一些示例中,半导体管芯308不是中介层管芯,这意味着其包括执行一个或多个动作的集成电路,并且其也可以包括金属层,以促进另一个半导体管芯和导电端子302之间的电信号的路由。图3B2是图3B1的结构的俯视图。
方法400包括在第一半导体管芯上分配可移除的粘合剂(例如,溶解在芳香烃如甲基苯中的粘合剂弹性体)(404)。图3C1描绘了图3B1的结构,但在半导体管芯308的顶部增加了粘合剂312。图3C2是图3C1的结构的俯视图。方法400包括使用粘合剂将第二半导体管芯耦合到第一半导体管芯(406)。图3D1描绘了图3C1的结构,但增加了半导体管芯314。具体地,半导体管芯314使用粘合剂312耦合到半导体管芯308。半导体管芯314可以使用管芯放置工具310在半导体管芯308上正确定位。图3D2是图3D1的结构的俯视图。
方法400包括使用第一键合线将第一半导体管芯耦合到封装件的导电端子(408),并且使用第二键合线将第二半导体管芯耦合到第一半导体管芯(410)。图3E1描绘了使用楔形键合工具318将键合线316从半导体管芯314(例如,半导体管芯314的有源表面)耦合到半导体管芯308(例如,半导体管芯308的有源表面)并将键合线320从半导体管芯308(例如,半导体管芯308的有源表面)耦合到导电端子302。在示例中,键合线316具有与上述键合线140的特性相同的部分或全部物理特性(例如,组成、直径、长度、曲率、键合类型等)。图3E2是图3E1的结构的俯视图,而图3E3是图3E1的结构的透视图。
方法400包括通过移除可溶解粘合剂使第二半导体管芯提升在第一半导体管芯上方(412)。图3F1描绘了图3E1的结构,但增加了溶剂322(例如甲苯),其溶解粘合剂312。粘合剂312的移除消除半导体管芯308、314之间的耦合,并且键合线316的类似弹簧的特性使半导体管芯314提升在半导体管芯308上方。作为结果,半导体管芯314悬浮在半导体管芯308的上方。图3F2是图3F1的结构的俯视图。图3G1描绘图3F1的结构,但增加了工具324(例如钨探针),以选择性地调整半导体管芯314的位置(例如高度)。图3G2提供图3G1结构的俯视图。图3H1描绘图3G1的结构,但移除了溶剂322,并使用管芯调整工具328来选择性地进一步调整半导体管芯314的位置。在一些示例中,间隙326至少为50密耳,这减轻了由于移动、推挤等在半导体管芯314和半导体管芯308之间发生撞击的机会。图3H2是图3H1的结构的俯视图。图3H3是图3H1的结构的透视图。
该方法400包括使用盖覆盖开放腔(414)。图3I1描绘图3H1的结构,但增加了覆盖开放腔301的盖330。盖330可以使用例如回流焊工艺或任何其他合适的粘合剂耦合到封装件300。例如,可以使用共晶焊料。盖330和半导体管芯314之间的间隙可以是至少50密耳,以减轻盖330和半导体管芯314之间由于移动、推挤等而引起的撞击。然而,如果实施不导电的陶瓷盖330,则可以使用更小的间隙(诸如10密耳)或更大的间隙。图3I2是图3I1的结构的俯视图。图3I3是图3I1的结构的透视图。
图5是电子器件500的示意性框图,该电子器件500例如个人计算机、服务器、智能手机、电视等,其包括根据各种示例的部件502。该部件502包括悬浮的半导体管芯(未明确示出)。该部件502可以是如图1A1至图1G3和图2中所描绘制造的结构。部件502可以是如图3A1至图3I3和图4所描绘制造的结构。
在上述讨论和权利要求中,术语“包括”和“组成”是以开放式方式使用的,并因此意味着“包括,但不限于……”。另外,术语“耦合”意味着间接或直接连接。因此,如果第一器件耦合到第二器件,该连接可以通过直接连接或通过经由其他器件和连接的间接连接。类似地,在第一组件或位置和第二组件或位置之间耦合的器件可以通过直接连接或通过经由其他器件和连接的间接连接。除非另有说明,在数值前面的“约”、“大约”或“基本上”是指所述数值的+/-10%。
上述讨论是对本公开的原则和各种示例的说明。一旦完全理解上述公开内容,许多变化和修改对于本领域技术人员来说将变得显而易见。以下权利要求应被解释为包括所有这些变化和修改。
Claims (35)
1.一种电子器件,其包括:
印刷电路板即PCB;
孔,其延伸穿过所述PCB;以及
半导体管芯,其通过铝键合线悬浮在所述孔的上方,所述半导体管芯与所述孔竖直对齐,并且所述键合线耦合到所述PCB。
2.根据权利要求1所述的电子器件,其进一步包括耦合到所述PCB并覆盖所述半导体管芯的帽。
3.根据权利要求1所述的电子器件,其进一步包括耦合到所述PCB的第一表面的帽,所述第一表面与所述铝键合线耦合到的所述PCB的第二表面相对,所述帽覆盖所述孔。
4.根据权利要求1所述的电子器件,其中所述铝键合线的直径小于大约1密耳。
5.根据权利要求1所述的电子器件,其中所述铝键合线的长度范围在大约100密耳和大约300密耳之间。
6.根据权利要求1所述的电子器件,其中所述半导体管芯悬浮在所述PCB上方至少50密耳处。
7.根据权利要求1所述的电子器件,其进一步包括位于所述铝键合线耦合到的所述PCB的表面上的第一金属层和定位在所述PCB内部的第二金属层。
8.根据权利要求1所述的电子器件,其中所述铝键合线以圆形图案耦合到所述PCB。
9.根据权利要求1所述的电子器件,其中所述孔是密封的。
10.根据权利要求1所述的电子器件,其中所述孔至少部分地填充与构成所述PCB的材料不同的材料。
11.一种电子器件,其包括:
印刷电路板即PCB,其具有第一表面和与所述第一表面相对的第二表面;
所述PCB中的孔,所述孔从所述第一表面延伸至所述第二表面;
半导体管芯,其悬浮在所述第一表面上方并与所述孔竖直对齐;
第一帽,其耦合到所述第一表面并覆盖所述半导体管芯;以及
第二帽,其耦合到所述第二表面并覆盖所述孔。
12.根据权利要求11所述的电子器件,其中所述第一帽和所述第二帽是金属帽或陶瓷帽。
13.根据权利要求11所述的电子器件,其进一步包括:
键合线,其耦合到所述半导体管芯;
在所述PCB的所述第一表面上的第一金属层,所述第一金属层耦合到所述键合线;
在所述PCB中的第一金属导通孔,所述第一金属导通孔耦合到所述第一金属层;
在所述PCB内部的第二金属层,所述第二金属层耦合到所述第一金属导通孔;
在所述PCB中的第二金属导通孔,所述第二金属导通孔耦合到所述第二金属层;以及
在所述PCB的所述第一表面上的第三金属层,所述第三金属层耦合到所述第二金属导通孔。
14.根据权利要求13所述的电子器件,其中所述键合线包括铝。
15.根据权利要求13所述的电子器件,其中所述第一帽在所述第一金属层和所述第三金属层之间接触所述PCB的所述表面。
16.根据权利要求13所述的电子器件,其中所述键合线具有大约1密耳的直径。
17.根据权利要求13所述的电子器件,其中所述键合线具有在69GPa与70GPa之间的杨氏模量。
18.根据权利要求13所述的电子器件,其中所述键合线具有大约200密耳的长度。
19.根据权利要求11所述的电子器件,其中所述半导体管芯悬浮在所述PCB上方至少50密耳处。
20.根据权利要求11所述的电子器件,其中所述第一帽和所述第二帽包含惰性气氛。
21.根据权利要求11所述的电子器件,其中所述孔是密封的。
22.根据权利要求11所述的电子器件,其中所述孔至少部分地填充与构成所述PCB的材料不同的材料。
23.一种方法,其包括:
使用半导体管芯覆盖印刷电路板即PCB中的孔的第一端,所述孔延伸穿过所述PCB;
向与所述第一端相对的所述孔的第二端施加吸力以将所述半导体管芯保持在适当位置中;
将铝键合线耦合到所述半导体管芯和所述PCB;以及
通过停止施加吸力,使所述半导体管芯提升在所述PCB上方。
24.根据权利要求23所述的方法,其进一步包括以圆形图案布置所述铝键合线。
25.根据权利要求23所述的方法,其进一步包括在所述半导体管芯处提供惰性气氛并使用金属帽覆盖所述半导体管芯,所述惰性气氛存在于所述金属帽内部。
26.根据权利要求23所述的方法,其中所述PCB包括在所述PCB内部的不同水平平面中的多个金属层。
27.根据权利要求23所述的方法,其进一步包括将金属帽耦合到所述PCB的第一表面,所述第一表面与所述铝键合线耦合到的所述PCB的第二表面相对。
28.一种半导体封装件,其包括:
导电端子,其暴露于所述半导体封装件的外表面;
第一半导体管芯,其通过第一键合线耦合到所述导电端子;以及
第二半导体管芯,其悬浮在所述第一半导体管芯上方,所述第二半导体管芯通过第二键合线耦合到所述第一半导体管芯。
29.根据权利要求28所述的半导体封装件,其中所述第二键合线包括铝。
30.根据权利要求28所述的半导体封装件,其中所述第二键合线具有不超过大约1密耳的直径。
31.一种方法,其包括:
将第一半导体管芯定位在半导体封装件的开放腔中;
在所述第一半导体管芯上分配粘合剂;
使用所述粘合剂将第二半导体管芯耦合到所述第一半导体管芯;
使用第一键合线将所述第一半导体管芯耦合到所述半导体封装件的导电端子;
使用第二键合线将所述第二半导体管芯耦合到所述第一半导体管芯;以及
通过移除所述粘合剂使所述第二半导体管芯提升在所述第一半导体管芯上方。
32.根据权利要求31所述的方法,其中使用所述第二键合线将所述第二半导体管芯耦合到所述第一半导体管芯包括使用楔形键合技术。
33.根据权利要求31所述的方法,其中移除所述粘合剂包括使用溶剂溶解所述粘合剂。
34.根据权利要求31所述的方法,其中所述第二键合线包括铝并且具有不超过大约2密耳的直径。
35.根据权利要求31所述的方法,其进一步包括在所述第二半导体管芯悬浮在所述第一半导体管芯上方的同时调整所述第二半导体管芯的位置。
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US7247932B1 (en) * | 2000-05-19 | 2007-07-24 | Megica Corporation | Chip package with capacitor |
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