CN114613665A - Method and device for cleaning quartz crystal boat - Google Patents
Method and device for cleaning quartz crystal boat Download PDFInfo
- Publication number
- CN114613665A CN114613665A CN202210239661.4A CN202210239661A CN114613665A CN 114613665 A CN114613665 A CN 114613665A CN 202210239661 A CN202210239661 A CN 202210239661A CN 114613665 A CN114613665 A CN 114613665A
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- quartz boat
- etching
- boat
- quartz
- cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Abstract
The embodiment of the invention discloses a method and a device for cleaning a quartz boat, wherein the method comprises the following steps: performing first etching on the quartz boat to be cleaned by using etching gas under a high-temperature environment to obtain a damaged layer and a stress layer which are positioned on the surface of the quartz boat and can generate a gettering effect; performing heat treatment on the quartz boat subjected to the first etching to promote diffusion of impurities in the quartz boat towards the surface of the quartz boat under the influence of the gettering action; and performing second etching on the quartz boat subjected to the heat treatment by using an etching gas in a high-temperature environment to remove the impurities diffused to the surface layer of the quartz boat from the quartz boat along with the surface layer of the quartz boat.
Description
Technical Field
The embodiment of the invention relates to the field of semiconductor silicon wafer production, in particular to a method and a device for cleaning a quartz boat.
Background
In the production of semiconductor silicon wafers, it is often necessary to subject the wafers to a heat treatment, such as annealing, to cause the wafers to meet the production process requirements.
In the process of heat treatment of silicon wafers, the silicon wafers are usually carried on a quartz boat to avoid the silicon wafers from contacting other parts in a heat treatment furnace to cause pollution to the silicon wafers. However, as the usage time increases, the cleanliness of the quartz boat itself decreases due to the influence of the external environment. For example, quartz boats can be contaminated with metal in addition to particulate matter on the surfaces. Under the condition that a polluted quartz boat is used for bearing silicon wafers to carry out heat treatment on the silicon wafers, for example, metal pollutants in the quartz boat can diffuse to the surfaces of the silicon wafers, and the metal pollutants can accelerate to diffuse towards the interior of the silicon wafers under the action of high temperature, so that the metal content of the silicon wafers is increased, and the silicon wafers after heat treatment cannot meet the requirements of the production process.
To avoid this, the quartz boat is typically cleaned periodically. In the conventional cleaning method, the quartz boat needs to be taken out of the heat treatment furnace and put into a tank type cleaning machine containing HF chemicals, and cleaning is performed by utilizing a chemical reaction between HF and silica. However, such a cleaning method requires an additional tank type cleaning machine, which is very costly, the quartz boat needs to be frequently transferred between the heat treatment furnace and the tank type cleaning machine, which results in a complicated cleaning process, and such a cleaning method cannot remove metal contaminants existing in the quartz boat.
Disclosure of Invention
Accordingly, it is desirable to provide a method and an apparatus for cleaning a quartz boat, which can clean the quartz boat without using an additional tank cleaning machine, thereby reducing the cost and removing impurities existing in the quartz boat.
The technical scheme of the embodiment of the invention is realized as follows:
in a first aspect, an embodiment of the present invention provides a method for cleaning a quartz boat, the method including:
performing first etching on the quartz boat to be cleaned by using etching gas under a high-temperature environment to obtain a damaged layer and a stress layer which are positioned on the surface of the quartz boat and can generate a gettering effect;
performing heat treatment on the quartz boat subjected to the first etching to promote diffusion of impurities in the quartz boat towards the surface of the quartz boat under the influence of the gettering action;
and performing second etching on the quartz boat subjected to the heat treatment by using an etching gas in a high-temperature environment to remove the impurities diffused to the surface layer of the quartz boat from the quartz boat along with the surface layer of the quartz boat.
In a second aspect, an embodiment of the present invention provides an apparatus for cleaning a quartz boat, the apparatus being configured to perform the method according to the first aspect, the apparatus comprising:
a heater defining a cavity, the heater being configured to provide a high temperature environment in the cavity required to perform the first etch, the heater being further configured to provide a thermal treatment temperature in the cavity required to perform the thermal treatment, the heater being further configured to provide a high temperature environment in the cavity required to perform the second etch;
an etching gas supply source for supplying an etching gas required for the first etching and the second etching into the cavity.
Embodiments of the present invention provide a method and an apparatus for cleaning a quartz boat, in which contaminants on the surface of the quartz boat can be removed due to the first etching process involving the removal of the surface material of the quartz boat, an additional tank washer is not required to be provided in the entire cleaning process, and a high temperature environment can be provided by using, for example, a heat treatment furnace for performing a silicon wafer heat treatment operation, so that the cleaning process can be completed without taking the quartz boat out of the heat treatment furnace, and it is apparent that the cleaning method can remove metal contaminants existing inside the quartz boat.
Drawings
FIG. 1 is a schematic diagram of a method for cleaning a quartz substrate boat according to an embodiment of the present invention;
FIG. 2 is a schematic view illustrating a change in state of a quartz boat during cleaning thereof using a method according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an apparatus for cleaning a quartz substrate boat according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Referring to fig. 1 in conjunction with fig. 2, an embodiment of the invention provides a method for cleaning a quartz boat QT, which may include:
s101: first etching the quartz boat QT to be cleaned with an etching gas under a high temperature environment to obtain a damaged layer L1 and a stress layer L2 which are located at the surface of the quartz boat QT and which are capable of producing gettering, the quartz boat QT to be cleaned here being shown uppermost in fig. 2 and which may contain impurities such as metal atoms or metal ions, which are exemplarily shown by "black dots", the first etching here involving removal of a surface material of the quartz boat QT, thereby causing damage to the quartz boat QT to form a damaged layer L1, the damaged layer L1 being transitionable to an undamaged portion inside the quartz boat QT through the stress layer L2, while the damaged layer L1 and the stress layer L2 are capable of producing gettering, and the "gettering" here "means, as schematically shown in fig. 2 by a plurality of solid arrows in the quartz boat QT subjected to the first etching, impurities present in the quartz boat QT diffuse in the directions of these arrows toward the damaged layer L1 and the stress layer L2 that can produce this "gettering effect";
s102: performing a heat treatment on the quartz boat QT subjected to the first etching to promote diffusion of impurities in the quartz boat QT toward the surface of the quartz boat QT under the influence of the gettering action, as shown by the quartz boat QT subjected to the heat treatment in fig. 2, the impurities in the quartz boat QT having been mainly present on the surface layer of the quartz boat QT after the diffusion, while the impurities in the central portion of the quartz boat QT have been very little or almost absent;
s103: the quartz boat QT subjected to the heat treatment is subjected to second etching with an etching gas under a high-temperature environment to remove the impurities diffused to the surface layer of the quartz boat QT from the quartz boat QT along with the surface layer of the quartz boat QT, thereby making it possible to obtain the quartz boat QT in which the impurities have been very little or almost nonexistent, as shown by the quartz boat QT subjected to the second etching in fig. 2.
Since the first etching involves removal of the surface material of the quartz boat QT, contaminants on the surface of the quartz boat QT can be removed, an additional tank washer need not be provided in the entire cleaning process, and a high-temperature environment can be provided by, for example, a heat treatment furnace that performs a heat treatment operation of a silicon wafer, so that the above-described cleaning process can be completed without taking the quartz boat QT out of the heat treatment furnace, and it is apparent that the above-described cleaning manner can realize removal of metal contaminants present inside the quartz boat QT.
Preferably, the etching gas used in the first etching and the second etching may be HCl gas, and the purity of the HCl gas may be, for example, 99.99999% high purity.
After the quartz boat QT is subjected to the second etching, the surface is rough, so that there is a risk of scratching the silicon wafer when the silicon wafer is carried for heat treatment, and on the other hand, even if the quartz boat QT after the second etching contains only a small amount of impurities, the small amount of impurities may still diffuse into the silicon wafer during the heat treatment of the silicon wafer to cause contamination of the silicon wafer. In this regard, in a preferred embodiment of the present invention, the method may further include surface-oxidizing the quartz boat QT subjected to the second etching with oxygen in a high-temperature environment to obtain an oxide layer capable of preventing diffusion of residual impurities in the quartz boat QT to the outside of the quartz boat QT. The oxide layer that forms can reduce the roughness on the surface of quartz crystal boat QT, reduces the risk of fish tail silicon chip to can prevent effectively that the impurity in the quartz crystal boat QT from diffusing to the outside, avoid the silicon chip that bears by this to be contaminated.
In the above-described heat treatment, it is necessary to avoid chemical reactions of the quartz boat QT with substances in the external environment at high temperatures, for which reason in a preferred embodiment of the invention the method may further comprise supplying a protective gas to the quartz boat QT during the heat treatment. The protective gas may be, for example, nitrogen gas which is chemically inert, and the purity of the nitrogen gas may be, for example, high purity of 99.99999%.
In order for the quartz boat QT to complete the above-described first etching, thermal treatment, second etching and surface oxidation in a more uniform manner, in a preferred embodiment of the invention, the method may further comprise rotating the quartz boat QT during the first etching, during the thermal treatment, during the second etching and during the surface oxidation. Thus, for example, when the etching gas is not uniformly distributed around the quartz boat QT in the first etching process, or when there are differences in the concentration of the etching gas around the quartz boat QT, the influence of such unevenness on the etching uniformity can be eliminated by the rotation of the quartz boat QT. Similarly, the influence of the unevenness of the temperature distribution around the quartz boat QT on the uniformity of the heat treatment, the influence of the unevenness of the concentration of the etching gas used for the second etching on the uniformity of the second etching, and the influence of the unevenness of the concentration of the oxygen on the uniformity of the surface oxidation can be eliminated by the rotation of the quartz boat QT.
In order to sufficiently diffuse the impurities in the quartz boat QT to the surface layer of the quartz boat QT, the duration of the heat treatment may be at least 10 hours in a preferred embodiment of the present invention. In this way, the impurities remaining in the central portion of the quartz boat QT can be reduced as much as possible, so that the amount of impurities in the quartz boat QT that is finished to be cleaned is as small as possible.
In a preferred embodiment of the present invention, the first etching, the heat treatment, the second etching, and the surface oxidation may be performed at a temperature of 950 ℃. In this way, temperature control can be achieved in a simpler manner, reducing the complexity of the operation for achieving cleaning.
Referring to fig. 3, an embodiment of the present invention further provides an apparatus 1 for cleaning a quartz boat QT, where the apparatus 1 is configured to perform the method according to the embodiments of the present invention, and the apparatus 1 may include:
a heater 10 defining a cavity 10C, the heater 10 being configured to provide a high temperature environment required for performing the first etching in the cavity 10C, the heater 10 being further configured to provide a heat treatment temperature required for performing the heat treatment in the cavity 10C, the heater 10 being further configured to provide a high temperature environment required for performing the second etching in the cavity 10C, a single quartz boat QT being disposed in the cavity 10C of the heater 10 as schematically shown in fig. 3, and in a case where the heater 10 is a heat treatment furnace for processing a silicon wafer, up to 120 quartz boats QT may be disposed in a furnace chamber corresponding to the cavity 10C;
an etching gas supply source 20 for supplying etching gas required for the first etching and the second etching into the cavity 10C, as schematically shown in fig. 3 by solid arrows associated with the etching gas supply source 20.
Preferably, still referring to fig. 3, the apparatus 1 may further comprise an oxygen supply 30, the oxygen supply 30 being adapted to supply oxygen required for performing the surface oxidation into the cavity 10C, as schematically illustrated in fig. 3 by means of solid arrows associated with the oxygen supply 30, and the heater 10 being further adapted to provide a high temperature environment in the cavity 10C required for performing the surface oxidation.
Preferably, still referring to fig. 3, the apparatus 1 may further comprise a protective gas supply 40, said protective gas supply 40 being adapted to supply said protective gas into said cavity 10C during said thermal treatment, as schematically illustrated in fig. 3 by means of a solid arrow associated with the protective gas supply 40.
Preferably, still referring to fig. 3, the apparatus 1 may further comprise a carrier table 40 for carrying the quartz boat QT in the cavity 10C, the carrier table 40 being configured to be rotatable, as schematically shown in fig. 3 by a solid arrow associated with the carrier table 40, to drive the carried quartz boat QT in rotation.
It should be noted that: the technical schemes described in the embodiments of the present invention can be combined arbitrarily without conflict.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A method for cleaning a quartz boat, the method comprising:
performing first etching on the quartz boat to be cleaned by using etching gas under a high-temperature environment to obtain a damaged layer and a stress layer which are positioned on the surface of the quartz boat and can generate a gettering effect;
performing heat treatment on the quartz boat subjected to the first etching to promote diffusion of impurities in the quartz boat towards the surface of the quartz boat under the influence of the gettering action;
and performing second etching on the quartz crystal boat subjected to the heat treatment by using etching gas in a high-temperature environment so as to remove the impurities diffused to the surface layer of the quartz crystal boat from the quartz crystal boat along with the surface layer of the quartz crystal boat.
2. The method of claim 1, further comprising surface oxidizing the quartz boat undergoing the second etching with oxygen in a high temperature environment to obtain an oxide layer capable of preventing diffusion of residual impurities in the quartz boat outside the quartz boat.
3. The method of claim 1 or 2, further comprising providing a protective gas to the quartz boat during the thermal treatment.
4. The method of claim 1 or 2, further comprising rotating the quartz boat during the first etching, during the thermal treatment, during the second etching, and during the surface oxidation.
5. The method according to claim 1 or 2, characterized in that the duration of the heat treatment is at least 10 hours.
6. The method of claim 1 or 2, wherein the first etching, the thermal treatment, the second etching, and the surface oxidation are all performed at a temperature of 950 ℃.
7. An apparatus for cleaning a quartz boat, the apparatus being configured to perform the method of any of claims 1 to 6, the apparatus comprising:
a heater defining a cavity, the heater being configured to provide a high temperature environment in the cavity required to perform the first etch, the heater being further configured to provide a thermal treatment temperature in the cavity required to perform the thermal treatment, the heater being further configured to provide a high temperature environment in the cavity required to perform the second etch;
an etching gas supply source for supplying an etching gas required for the first etching and the second etching into the cavity.
8. The apparatus of claim 7, further comprising an oxygen supply source for supplying oxygen required to perform the surface oxidation into the cavity, and the heater is further configured to provide a high temperature environment in the cavity required to perform the surface oxidation.
9. The apparatus of claim 7 or 8, further comprising a protective gas supply for supplying the protective gas into the cavity during the thermal treatment.
10. The apparatus of claim 7 or 8, further comprising a susceptor for carrying the quartz boat in the cavity, the susceptor being configured to be rotatable to drive the carried quartz boat in rotation.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210239661.4A CN114613665A (en) | 2022-03-11 | 2022-03-11 | Method and device for cleaning quartz crystal boat |
| TW111138057A TWI835333B (en) | 2022-03-11 | 2022-10-06 | Method and device for cleaning quartz crystal boat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210239661.4A CN114613665A (en) | 2022-03-11 | 2022-03-11 | Method and device for cleaning quartz crystal boat |
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| Publication Number | Publication Date |
|---|---|
| CN114613665A true CN114613665A (en) | 2022-06-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210239661.4A Pending CN114613665A (en) | 2022-03-11 | 2022-03-11 | Method and device for cleaning quartz crystal boat |
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| CN (1) | CN114613665A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116435226A (en) * | 2023-05-04 | 2023-07-14 | 浙江海纳半导体股份有限公司 | Method for removing metal contamination of monocrystalline silicon piece and decontamination equipment |
-
2022
- 2022-03-11 CN CN202210239661.4A patent/CN114613665A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116435226A (en) * | 2023-05-04 | 2023-07-14 | 浙江海纳半导体股份有限公司 | Method for removing metal contamination of monocrystalline silicon piece and decontamination equipment |
| CN116435226B (en) * | 2023-05-04 | 2024-04-26 | 浙江海纳半导体股份有限公司 | Method for removing metal contamination of monocrystalline silicon piece and decontamination equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202303696A (en) | 2023-01-16 |
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Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710100 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |