CN114594540B - 45-degree silicon-based reflector and manufacturing method thereof - Google Patents
45-degree silicon-based reflector and manufacturing method thereof Download PDFInfo
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- CN114594540B CN114594540B CN202210237801.4A CN202210237801A CN114594540B CN 114594540 B CN114594540 B CN 114594540B CN 202210237801 A CN202210237801 A CN 202210237801A CN 114594540 B CN114594540 B CN 114594540B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 70
- 239000010703 silicon Substances 0.000 title claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000002243 precursor Substances 0.000 claims abstract description 38
- 238000005520 cutting process Methods 0.000 claims abstract description 35
- 238000005498 polishing Methods 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims description 24
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 16
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 239000004094 surface-active agent Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 230000035484 reaction time Effects 0.000 claims description 3
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical compound [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 abstract description 4
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 3
- 238000002310 reflectometry Methods 0.000 abstract description 2
- 238000003672 processing method Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000007771 core particle Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 101100008049 Caenorhabditis elegans cut-5 gene Proteins 0.000 description 1
- 101100008050 Caenorhabditis elegans cut-6 gene Proteins 0.000 description 1
- -1 baking Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0808—Mirrors having a single reflecting layer
Abstract
The invention discloses a 45-degree silicon-based reflector and a manufacturing method thereof. The manufacturing method comprises the following steps: enabling the surface of the silicon wafer with the 100 crystal face to be directionally corroded along the 110 direction to generate an inclined surface and directionally corroded along the 100 direction to generate a parallel surface, so as to obtain a reflector assembly; cutting and separating the reflector assembly to obtain a reflector precursor; polishing the roughness grade of the inclined surface in the reflector precursor to a mirror grade; and cutting and separating the polished reflecting mirror precursor to obtain the 45-degree silicon-based reflecting mirror. According to the manufacturing method provided by the invention, the 45-degree basic surface is obtained through corrosion, and then the 45-degree inclined surface is polished to the mirror surface level through a cold processing method, so that the defects of the prior art are overcome, the reflectivity of the silicon-based reflector is greatly improved, the technical process and the structure of the reflector are simple, the manufacturing cost is obviously reduced, and the requirement of wide application is met.
Description
Technical Field
The invention relates to the technical field of optical precision machining, in particular to a 45-degree silicon-based reflector and a manufacturing method thereof.
Background
At present, a silicon-based reflecting mirror is prepared by a wet etching method, a silicon wafer with a (100) crystal face is generally adopted, an inclined plane (111) surface and the crystal face (100) are etched, an included angle between two etched surfaces generated by etching is 54.74 degrees, the (111) surface is used as a reflecting surface, and the (111) surface has stable and smooth properties and can be directly used as an optical reflecting mirror surface.
The 45-degree reflecting mirror is widely applied to an optical system, and plays roles in 90-degree conversion of an optical path and 90-degree included angle formation between incident light and reflected light. In the silicon photon integrated chip, the 45-degree reflecting mirror can vertically reflect light in the waveguide out of the chip, compared with other angles, the optical path adjustment of the 54.74-degree silicon reflecting mirror prepared by the wet etching is simpler, and the 45-degree reflecting mirror is corroded by silicon because of the integration level and the cost requirement, so that the silicon photon integrated chip has high application value.
However, it is difficult to manufacture a silicon wafer (100) to obtain a 45 ° mirror surface that can be used as a reflecting surface directly, and the main reason is that the microstructure of the surface of the (100) surface and the surface of the (110) surface (the included angle of which is 45 °) after wet etching is uneven, and the surface is slightly small in pits (relatively coarse), and cannot be used as a reflecting surface of an optical mirror surface directly.
The Chinese patent No. 112764144A provides a design and manufacturing structure and manufacturing method of a 45-degree silicon reflector, wherein the angle of the reflector is adjusted by using a surface with an included angle of 54.74 degrees (111) and a step structure designed on the back of the silicon reflector, so that the angle of the reflector is 45 degrees, but the upper surface and the lower surface of the reflector are not parallel after forming, and the bottom of the reflector cannot be stably fixed;
the Chinese patent No. 112782794A also provides a manufacturing structure and a manufacturing method for the smoothness of the 45-degree reflecting mirror, wherein a rough 45-degree reflecting surface formed by a (110) surface is covered with a molten material and heated to melt to form a smooth plane and a metal reflecting layer is plated, so that the problem of overlarge roughness of the (110) surface is solved, the technology has the advantages of complex structure and high cost, can not meet the requirement of a pure silicon substrate, has limitation, and is unfavorable for the wide application of the silicon-based 45-degree reflecting mirror;
disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a 45-degree silicon-based reflector and a manufacturing method thereof by combining wet etching and cold processing.
In order to achieve the purpose of the invention, the technical scheme adopted by the invention comprises the following steps:
in a first aspect, the present invention provides a method for manufacturing a 45 ° silicon-based mirror, including:
1) Enabling the surface of the silicon wafer with the 100 crystal face to be directionally corroded along the 110 direction to generate an inclined surface and directionally corroded along the 100 direction to generate a parallel surface, so as to obtain a reflector assembly;
2) Cutting and separating the reflector assembly to obtain a reflector precursor;
3) Polishing the roughness grade of the inclined surface in the reflector precursor to a mirror grade;
and 4) cutting and separating the polished reflector precursor to obtain the 45-degree silicon-based reflector.
In a second aspect, the invention further provides a 45-degree silicon-based reflector manufactured by the manufacturing method, wherein the 45-degree silicon-based reflector comprises an inclined surface with an included angle of 45 degrees with the bottom surface, and the roughness grade of the inclined surface is a mirror surface grade.
Based on the technical scheme, compared with the prior art, the invention has the beneficial effects that:
according to the manufacturing method of the 45-degree silicon-based reflector, the 45-degree basic surface is obtained firstly through corrosion, then the 45-degree inclined surface is polished to the mirror surface level through a cold working method, the defects of the existing technology are overcome, the reflectivity of the silicon-based reflector is greatly improved, the technical process and the structure of the reflector are simple, the manufacturing cost is remarkably reduced, and the requirement of wide application is met.
The above description is only an overview of the technical solutions of the present invention, and in order to enable those skilled in the art to more clearly understand the technical means of the present application, the present invention may be implemented according to the content of the specification, the following description is given of the preferred embodiments of the present invention with reference to the accompanying drawings.
Drawings
FIG. 1 is a schematic flow chart of a method for fabricating a 45-degree silicon-based reflector according to an exemplary embodiment of the present invention;
FIG. 2 is a schematic partial flow chart of a method for fabricating a 45-degree silicon-based reflector according to an exemplary embodiment of the present invention;
FIG. 3 is a schematic flow chart of a method for fabricating a 45-degree silicon-based reflector according to an exemplary embodiment of the present invention;
reference numerals illustrate: 1. a silicon wafer; 2. an inclined surface; 3. parallel surfaces; 4. a bottom surface; 5. a first cut; 6. a second cut; 7. a second cut surface; 8. a first clamping surface; 9. a second clamping surface; 10. a clamping tool; 11. polishing the plane; 12. a mirror precursor.
Detailed Description
In view of the shortcomings in the prior art, the inventor of the present invention has long studied and practiced in a large number of ways to propose the technical scheme of the present invention. The technical scheme, the implementation process, the principle and the like are further explained as follows.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced otherwise than as described herein, and therefore the scope of the present invention is not limited to the specific embodiments disclosed below.
Moreover, relational terms such as "first" and "second", and the like, may be used solely to distinguish one from another component or method step having the same name, without necessarily requiring or implying any actual such relationship or order between such components or method steps.
Referring to fig. 1-3, a method for manufacturing a 45 ° silicon-based reflector according to an embodiment of the present invention includes the following steps:
1) The surface of a silicon wafer 1 with a 100 crystal face is directionally corroded along the 110 direction to generate an inclined surface 2 and is directionally corroded along the 100 direction to generate a parallel surface 3, and an included angle of 45 degrees is formed between the inclined surface 2 and the parallel surface 3, so that a reflector assembly is obtained.
2) The mirror precursor 12 is obtained by cutting and separating from the mirror assembly.
3) The roughness grade of the inclined surface in the mirror precursor is polished to a specular grade.
And 4) cutting and separating from the polished reflector precursor 12 to obtain the 45-degree silicon-based reflector.
Wherein 100/110 refers to the lattice direction in the silicon wafer 1, and the reflector assembly may include a plurality of reflector precursors 12 and corresponding leftover material portions, may include only a plurality of reflector precursors 12, and may further include only one reflector precursor 12; the cutting may be mechanical cutting by a cutting tool, or may be laser cutting or water jet cutting, preferably mechanical cutting, and the cutting precision is higher.
Based on the embodiment, the 45-degree silicon-based reflecting mirror with the mirror surface grade is successfully prepared by combining wet etching and polishing, the polishing process is simple, the controllability is high, the large-scale production is very beneficial, the preparation method provided by the invention avoids complex back angle adjustment or coating, baking, film plating and other procedures, the manufacturing cost is obviously reduced, and the product yield is obviously improved due to the reduction of the complexity of the procedures, so that the wide application of the 45-degree silicon-based reflecting mirror is facilitated.
In some embodiments, step 1) may specifically comprise the steps of:
pre-plating a SiN layer of 50-200nm on the silicon wafer, covering photoresist with the thickness of 2-4um on the SiN layer as a mask, and perforating the SiN layer to form a plurality of rectangular openings which are parallel to each other and have 45-degree bevel edges; more specifically, it includes: pre-plating 50-200nm SiN on a silicon wafer, carrying out open-pore photoetching by adopting photoresist with the thickness of 2-4um, then carrying out dry etching to open pores on the SiN layer, and opening a series of rectangular holes of the SiN layer for selectively carrying out corrosion.
Etching the silicon wafer 1 from the opening by using an etching solution.
In some embodiments, the etching solution may include an alkaline etching solution.
In some embodiments, the solute in the etching solution may include TMAH and/or potassium hydroxide, sodium hydroxide.
In some embodiments, the TMAH in the etching solution may preferably have a mass fraction of 10 to 40%.
In some embodiments, the solute of the corrosive liquid may also include a surfactant.
In some embodiments, the surfactant may include any one or a combination of two of triton, t-butanol.
In some embodiments, the reaction temperature of the directional etch may preferably be in the range of 70-90 ℃.
In some embodiments, the reaction time for the directional etch is from 5 to 10 hours, and for those skilled in the art, the reaction time for a particular directional etch may be determined by calculation or by multiple experiments depending on the depth requirements of the desired etch.
With continued reference to fig. 2, in some embodiments, step 2) may specifically include the steps of:
a first cut 5 is made along the intersection of the inclined and parallel faces 2, 3 and perpendicular to the wafer 1, creating a first cut face.
A second cut 6 is made along the middle line of two adjacent inclined surfaces 2 and perpendicular to the silicon wafer 1, resulting in a second cut surface 7.
An elongated structure between adjacent first and second cut surfaces 7 is taken as the mirror precursor 12.
It will be appreciated that the etching grooves formed by etching each parallel surface 3 and the two adjacent inclined surfaces 2 in the above technical solution should penetrate through the silicon wafer 1 along the radial direction of the silicon wafer 1 to maximize the radial dimension of the silicon wafer 1, so that the long-shaped reflector precursors 12 can be obtained by cutting and separating along the first cutting surface and the second cutting surface 7, and the inclined surfaces 2 on each reflector precursor 12 can be located in the same plane without protruding blocking polished structures. The above structure can be realized by patterning a photoresist with a strip array of openings.
With continued reference to fig. 3, in some embodiments, step 3) may specifically include the steps of:
a plurality of the mirror precursors 12 are fixed in the holder 10, and the inclined surfaces 2 of the plurality of the mirror precursors 12 are located in the same polishing plane 11.
The polishing plane 11 is thinned and polished until the roughness levels of the plurality of inclined surfaces 2 are mirror-surface levels.
With continued reference to fig. 3, in some embodiments, the holder 10 comprises an elongated holder opening comprising a first holder surface 8 and a second holder surface 9 perpendicular to each other, the first holder surface 8 matching the second cutting surface 7, the second holder surface 9 matching the bottom surface 4 of the mirror precursor 12.
In some embodiments, the thinning polishing mode may be CMP, the polishing paste includes cerium oxide, and the polishing rotation speed is preferably 30-100rpm.
In some embodiments, the roughness of the inclined surface 2 of the mirror precursor 12 after the thinning polishing is less than 10nm.
Based on the above technical scheme, the first clamping surface 8 and the second clamping surface 9 in the clamping tool are utilized to fully fix and position the bottom surface 4 and the second cutting surface 7 of the reflector precursor 12, so that the bottom surface 4 and the second cutting surface 7 are matched with each other, the reflector precursor 12 is positioned very accurately and firmly, meanwhile, the plurality of reflector precursors 12 can be fixed on the clamping tool by the design of the clamping tool, and all inclined surfaces 2 of the clamping tool form an integral polishing plane 11, so that mass polishing can be performed simultaneously, the consistency of products is improved, the yield is remarkably improved, and the manufacturing cost is reduced.
In some embodiments, step 4) may specifically comprise the steps of:
cutting the polished long strip-shaped reflector precursor 12 at intervals of a preset distance along the length direction to obtain a plurality of 45-degree silicon-based reflectors.
In some embodiments, the predetermined distance may preferably be equal to a distance between the first cutting surface and the second cutting surface. So that the bottom surface of the reflector is formed into a square shape, and subsequent processing and application are convenient.
As a specific application example, the method for manufacturing the 45-degree silicon-based reflecting mirror provided by the invention can be implemented by adopting the following steps:
1. an etchant is provided that includes a surfactant.
2. The inclined surface 2 of 45 ° was pre-etched using a mixed solution of TMAH and surfactant triton.
3. The resulting silicon wafer is cut into bars (i.e., the mirror precursors 12) and held in a 90 ° rest (i.e., the holder 10) as shown in fig. 3 for thinning and polishing.
4. And cleaning the bar to remove the fixing glue.
5. And sequentially placing the photoresist-removed bars, and cutting the bars into single core particles (namely the 45-degree silicon-based reflecting mirror).
6. The core particles are cleaned by a cleaning machine.
The embodiment of the invention also provides the 45-degree silicon-based reflecting mirror manufactured by the manufacturing method in any embodiment, wherein the 45-degree silicon-based reflecting mirror comprises the inclined surface 2 with an included angle of 45 degrees with the bottom surface 4, and the roughness grade of the inclined surface 2 is a mirror surface grade.
The technical scheme of the invention is further described in detail below through a plurality of embodiments and with reference to the accompanying drawings. However, the examples are chosen to illustrate the invention only and are not intended to limit the scope of the invention.
Example 1
The embodiment provides a manufacturing method of a 45-degree silicon-based reflector, which specifically comprises the following steps:
1) Selecting a 4 inch round 100 silicon wafer 1, forming a SiN mask with the thickness of 200nm on the upper surface of the 100 silicon wafer, covering 3 mu m photoresist on SiN, carrying out 45 DEG open-pore photoetching and dry etching on the wafer relative to the bottom edge, and opening a series of rectangular holes penetrating the SiN mask for selectively carrying out corrosion;
2) Immersing the silicon wafer 1 with the mask layer into a TMAH solution with the mass fraction of 25% at 80 ℃ to etch for about 7 hours, so as to generate a strip-shaped etching groove, wherein the side wall of the etching groove forms an included angle of 45 degrees with the bottom;
3) Dividing the silicon wafer 1 obtained by the etching into a plurality of long mirror precursors 12 along the cutting lines shown in fig. 2;
4) As shown in the assembling method of fig. 3, the bottom surface 4 and the larger side cut surface (second cut surface 7) of the plurality of the reflector precursors 12 are clamped in the clamping opening of the clamping tool 10 shown in fig. 3, and at this time, the inclined surfaces 2 of the plurality of the reflector precursors 12 are naturally arranged to form a polishing plane 11;
5) Repeatedly polishing along the polishing plane 11 by using a CMP method, the polishing parameter being 30rpm until the roughness of the inclined surfaces 2 of the plurality of mirror precursors 12 is reduced to less than 10nm;
6) Removing the polished reflector precursor 12 in the previous step, placing, and cutting into independent 45-degree silicon-based reflectors with required lengths;
7) And cleaning the 45-degree silicon-based reflecting mirror to obtain a finished product.
Example 2
The present embodiment provides a method for manufacturing a 45 ° silicon-based mirror, which is substantially the same as embodiment 1, and differs only in that:
6 inch silicon sheet is selected; forming a photoresist layer with the surface of 2 mu m as a mask;
the etching solution is TMAH solution with the mass fraction of 40%, and the etching time is about 5 hours;
the polishing rotation speed was 100rpm.
Example 3
The present embodiment provides a method for manufacturing a 45 ° silicon-based mirror, which is substantially the same as embodiment 1, and differs only in that:
6 inch silicon sheet is selected; forming a photoresist layer with the thickness of 4 mu m on the surface as a mask;
the etching solution is TMAH solution with the mass fraction of 10 percent, and the etching time is about 10 hours;
the polishing rotation speed was 60rpm.
Example 4
The present embodiment provides a method for manufacturing a 45 ° silicon-based mirror, which is substantially the same as embodiment 1, and differs only in that:
2 inches of silicon slice is selected; forming a SiN layer with the thickness of 50nm on the surface as a mask;
the etching solution is 40% of potassium hydroxide solution with mass fraction, and the etching time is about 5h;
the polishing rotation speed was 100rpm.
It should be understood that the above embodiments are merely for illustrating the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the present invention and implement the same according to the present invention without limiting the scope of the present invention. All equivalent changes or modifications made in accordance with the spirit of the present invention should be construed to be included in the scope of the present invention.
Claims (10)
1. The manufacturing method of the 45-degree silicon-based reflecting mirror is characterized by comprising the following steps of:
1) Enabling the surface of the silicon wafer with the 100 crystal face to be directionally corroded along the 110 direction to generate an inclined surface and directionally corroded along the 100 direction to generate a parallel surface, so as to obtain a reflector assembly;
2) Performing first cutting along the intersection line of the inclined surface and the parallel surface and perpendicular to the silicon wafer to generate a first cutting surface; performing second cutting along the middle line of two adjacent inclined planes and perpendicular to the silicon wafer to generate a second cutting surface; taking a strip-shaped structure between the adjacent first cutting surface and the second cutting surface as a reflector precursor;
3) Fixing a plurality of the reflector precursors in a clamping tool, and enabling inclined surfaces of the reflector precursors to be positioned in the same polishing plane; thinning and polishing the polishing plane until the roughness grades of a plurality of inclined surfaces are mirror surface grades; the clamping tool comprises a strip-shaped clamping opening, wherein the clamping opening comprises a first clamping surface and a second clamping surface which are perpendicular to each other, the first clamping surface is matched with the second cutting surface, and the second clamping surface is matched with the bottom surface of the reflector precursor;
and 4) cutting and separating the polished reflector precursor to obtain the 45-degree silicon-based reflector.
2. The method according to claim 1, wherein step 1) specifically comprises:
preplating a 50-200nm SiN layer on the silicon wafer, covering 2-4um thick photoresist on the SiN layer as a mask, and perforating the SiN layer to form a plurality of rectangular openings which are parallel to each other and have 45-degree bevel edges;
and etching the silicon wafer from the opening by using an etching solution.
3. The method of manufacturing according to claim 2, wherein the etching liquid comprises an alkaline etching liquid;
the solute in the corrosive liquid comprises one or more than two of TMAH, potassium hydroxide and sodium hydroxide;
the mass fraction of TMAH in the corrosive liquid is 10-40%.
4. The method of claim 3, wherein the solute of the etching solution further comprises a surfactant;
the surfactant comprises any one or two of triton and tertiary butanol.
5. The method according to claim 2, wherein the reaction temperature of the directional etching is 70-90 ℃ and the reaction time is 5-10 h.
6. The method of claim 1, wherein the first clamping surface is fixed to the second cutting surface and the second clamping surface is fixed to the bottom surface by wax bonding.
7. The method according to claim 6, wherein the polishing mode of the thinning polishing is CMP polishing, and the polishing medium in the polishing paste used comprises cerium oxide at a polishing rotation speed of 30-100rpm;
and after the thinning and polishing, the roughness of the inclined surface of the reflector precursor is less than 10nm.
8. The method according to claim 1, wherein step 4) specifically comprises:
cutting the polished long strip-shaped reflector precursor at intervals of a preset distance along the length direction of the polished long strip-shaped reflector precursor to obtain a plurality of 45-degree silicon-based reflectors.
9. The method of claim 8, wherein the predetermined distance is equal to a distance between the first and second cutting surfaces.
10. A 45 ° si-based mirror according to any one of claims 1-9, wherein said 45 ° si-based mirror comprises an inclined surface at an angle of 45 ° to its bottom surface, said inclined surface having a roughness grade of mirror grade.
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| CN202210237801.4A CN114594540B (en) | 2022-03-11 | 2022-03-11 | 45-degree silicon-based reflector and manufacturing method thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1345264A (en) * | 1999-03-30 | 2002-04-17 | 株式会社尼康 | Polishing body, polisher, plishing method and method for producing semiconductor device |
| JP2009229809A (en) * | 2008-03-24 | 2009-10-08 | Victor Co Of Japan Ltd | Mirror, method for manufacturing mirror, and optical pickup device using mirror |
| CN102285636A (en) * | 2011-08-03 | 2011-12-21 | 中国人民解放军国防科学技术大学 | Wet etching preparation processes for polygonal section silicon beam |
| CN109387893A (en) * | 2017-08-11 | 2019-02-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | The manufacturing method of micro-reflector |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011112260A2 (en) * | 2010-03-11 | 2011-09-15 | Pacific Biosciences Of California, Inc. | Micromirror arrays having self aligned features |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1345264A (en) * | 1999-03-30 | 2002-04-17 | 株式会社尼康 | Polishing body, polisher, plishing method and method for producing semiconductor device |
| JP2009229809A (en) * | 2008-03-24 | 2009-10-08 | Victor Co Of Japan Ltd | Mirror, method for manufacturing mirror, and optical pickup device using mirror |
| CN102285636A (en) * | 2011-08-03 | 2011-12-21 | 中国人民解放军国防科学技术大学 | Wet etching preparation processes for polygonal section silicon beam |
| CN109387893A (en) * | 2017-08-11 | 2019-02-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | The manufacturing method of micro-reflector |
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