CN116968197A - Diamond internal flow passage processing method - Google Patents

Diamond internal flow passage processing method Download PDF

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Publication number
CN116968197A
CN116968197A CN202310910208.6A CN202310910208A CN116968197A CN 116968197 A CN116968197 A CN 116968197A CN 202310910208 A CN202310910208 A CN 202310910208A CN 116968197 A CN116968197 A CN 116968197A
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China
Prior art keywords
diamond
flow channel
film layer
processing
internal flow
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CN202310910208.6A
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Chinese (zh)
Inventor
王宁
赵华龙
赵卫
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XiAn Institute of Optics and Precision Mechanics of CAS
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XiAn Institute of Optics and Precision Mechanics of CAS
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Priority to CN202310910208.6A priority Critical patent/CN116968197A/en
Publication of CN116968197A publication Critical patent/CN116968197A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/033—Other grinding machines or devices for grinding a surface for cleaning purposes, e.g. for descaling or for grinding off flaws in the surface
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C30B25/205—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer the substrate being of insulating material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
    • C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0605—Composition of the material to be processed
    • B01J2203/062—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0655—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/068—Crystal growth

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention provides a method for processing a diamond internal flow passage, which is used for solving the technical problem that the existing method for processing the diamond internal flow passage cannot process a nano-scale or even micro-nano-scale specification heat dissipation flow passage required by a chip. The processing method of the diamond internal flow passage comprises the following steps: preparing a surface runner with a specification of nanometer grade or more on the surface of the diamond by a laser beam; coating a film on the surface of the diamond with the surface flow channel prepared, filling the surface flow channel with a film layer, and coating the surface of the diamond with the film layer; grinding and cutting to remove the film layer on the surface of the diamond, and reserving the film layer in the surface flow channel; growing diamond on the surface of the diamond to form a finished diamond; and etching and removing a film layer in the finished diamond by adopting an acid solution to form a diamond inner flow channel. The invention adopts the method of surface runner processing, coating protection and diamond growth to realize the processing of the inner runner of the diamond, and can be widely applied to the production of the radiating bottom plate of the diamond chip.

Description

Diamond internal flow passage processing method
Technical Field
The invention relates to diamond, in particular to a method for processing an internal flow channel of diamond.
Background
Diamond crystals have extremely high hardness and thermal conductivity, and excellent chemical stability, and are therefore widely used in industries such as machine manufacturing and semiconductors. The diamond can be divided into two major categories, namely natural monocrystalline diamond and artificial diamond, wherein the natural monocrystalline diamond has extremely rare content in the nature, is quite expensive, has fewer industrial applications and is mainly processed into jewelry; synthetic diamond can be classified into single crystal and polycrystalline diamond, and is mainly used for industrial applications.
The diamond has excellent heat dissipation performance, a heat dissipation flow channel is processed in the diamond, cooling water is introduced, and the heat conductivity of the material can be increased by at least one time by adopting a boiling heat exchange mechanism, so that the diamond is considered as an optimal chip heat dissipation base material. At present, the internal flow channel of diamond is used as a novel technical means of a semiconductor chip heat dissipation substrate, and the application is realized in part of fields. However, the conventional processing methods, such as self-assembly, hydrothermal, template, chemical vapor deposition, and electrochemical etching, cannot meet the processing requirements of the internal flow channels of diamond. The self-assembly method, the hydrothermal method and the electrochemical etching method can only process the flow channel on the diamond surface and cannot process the internal flow channel due to principle limitation. The internal runner scale manufactured by the template method and the chemical vapor deposition method is above millimeter level, and can not be used for nano-scale or even micro-nano-scale of the chip.
The laser processing is to use the energy of light to reach high energy density on a focus after being focused by a lens, and processing is performed by a photo-thermal effect; meanwhile, the laser processing does not need tools, has high processing speed and small surface deformation, and can process various materials, so that the laser processing can meet the requirements of nano-scale and even micro-nano-scale of the chip. However, the chemical properties of diamond are very stable, the traditional laser processing method can process the inside of diamond, but residues after laser processing cannot be discharged to form a channel, so that nano-scale or even micro-nano-scale flow channel processing in the diamond is a big bottleneck restricting the application of a heat dissipation base plate of a diamond chip, and is a difficult problem to be solved at present.
Disclosure of Invention
The invention aims to solve the technical problems that residues after laser processing cannot be discharged to form a channel and nano-scale or even micro-nano-scale heat dissipation channels required by chips are difficult to process in the diamond in the existing diamond internal channel processing method, and provides the diamond internal channel processing method.
In order to achieve the above object, the technical solution of the present invention is as follows:
the method for processing the inner flow passage of the diamond is characterized by comprising the following steps of:
preparing a surface runner with a specification of more than nanometer level on the prepared diamond surface through a laser beam;
coating a film on the surface of the diamond with the surface flow channels, filling the surface flow channels with a film layer, and simultaneously, filling the surface of the diamond with the film layer; the film layer is made of a metal material which does not react with the diamond material in a physical-chemical way;
grinding and cutting the surface of the diamond, removing the film layer on the surface of the diamond, and reserving the film layer in the surface flow channel;
step 4, removing the diamond surface of the surface film layer to grow diamond upwards in the step 3, so as to form a finished diamond;
and 5, etching the inner film layer of the finished diamond by adopting an acid solution, and removing the etched film layer, wherein the surface flow channel forms an inner flow channel, so that the processing of the inner flow channel of the diamond is completed.
Further, in step 2 ], the film layer is made of silver material or copper material.
Further, in step 2, the thickness of the film layer at the corresponding position of the surface flow channel is larger than the depth of the surface flow channel, so as to ensure that the film layer of the coating film fills the surface flow channel.
Further, the type of diamond grown in step 4 is the same as the type of diamond prepared in step 1);
the thickness of the diamond prepared in the step 1 is 0.01-10mm;
the thickness of the finished diamond formed in the step 4 is 0.02-20mm.
Further, in the step 2), the plating film on the diamond surface is specifically:
the vacuum coating method is adopted to coat the diamond surface, so that the nano-scale or even micro-nano-scale flow channel can be covered, and the complete coverage of the film layer in the surface flow channel is ensured.
In the step 3), the grinding and cutting of the diamond surface is specifically as follows:
the mechanical polishing method is adopted to polish the surface of the diamond, and the hardness of the polishing cutter is larger than that of the film and smaller than that of the diamond, so that the film is removed by polishing and the surface of the diamond is not influenced, and the surface of the diamond is kept unchanged.
In the step 4), the continuous growth of diamond on the surface of the diamond is specifically as follows:
and continuing to grow diamond on the surface of the diamond by adopting a chemical vapor deposition method or a high-temperature high-pressure method.
Further, in step 1 ], the laser beam is a gaussian beam;
when preparing the surface flow channel, the focus of the laser beam is focused on the diamond surface, and the focused light spot size is as follows: 0.1-100 um.
Further, in step 1 ], the laser type of the laser beam is continuous laser or pulse laser;
when preparing a surface flow channel on the prepared diamond surface by a laser beam, the laser power of the laser beam is set to be 0.1-1000W, and the laser frequency is set to be 0-10 MHz.
Further, in step 1, the processing shape of the surface runner is any shape, and the width of the surface runner is 0.1-1000 μm.
Further, in step 1 ], when the surface flow channel is prepared, a multi-channel parallel processing mode is adopted for processing, specifically, a multi-channel parallel processing mode is adopted for preparing a wider surface flow channel.
Compared with the prior art, the invention has the following beneficial effects:
1. the method for processing the inner flow passage of the diamond provided by the invention realizes the processing of the inner flow passage of the diamond by adopting a method combining surface flow passage processing, coating protection and diamond growth, avoids the problem that residues in the inner flow passage processed directly by laser cannot be removed, has the advantages of simple process, convenient operation and strong practicability, and can be widely applied to the industrial production of the radiating bottom plate of the diamond chip.
2. The method for processing the diamond internal flow channel provided by the invention has the advantage of processing the surface flow channel by utilizing the method for generating the internal flow channel by utilizing the surface flow channel, and can simply realize the manufacture of the internal flow channels with different shapes and sizes.
3. According to the method for processing the diamond internal flow channel, provided by the invention, the flexible processing of the surface flow channel can be realized by utilizing a laser processing mode, any programmable shape is realized, and the width of the flow channel can reach the micro-nano level of minimum 0.1 mu m.
4. Compared with the defect that the traditional method is difficult to cover the micro-nano flow channel width, the diamond internal flow channel processing method provided by the invention has the advantages that the vacuum coating method is adopted to cover the flow channel and the diamond surface, so that the micro-nano flow channel width can be covered.
Drawings
FIG. 1 is a flow chart of a method for processing an internal flow channel of a diamond according to the present invention;
FIG. 2 is a schematic diagram of step 1 of the present method;
FIG. 3 is a schematic diagram of step 2 of the present method;
FIG. 4 is a schematic diagram of step 3 of the present method;
FIG. 5 is a schematic diagram of step 4 of the method;
fig. 6 is a schematic diagram of step 5 of the present method.
Specific reference numerals are as follows:
1-a laser beam; 2-diamond; 3-surface flow channels; 4-a film layer; 5-finished diamond.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
The method for processing the diamond internal flow channel, as shown in fig. 1, specifically comprises the following steps:
as shown in fig. 2, a surface flow channel 3 with a size of nanometer or more, which is commonly referred to as micro-nanometer in the present invention, is prepared on the surface of the prepared diamond 2 by a laser processing method. In the invention, a Gaussian beam is generally adopted as the laser beam 1, specifically, the laser power of the laser beam 1 is set to be 0.1-1000W, the laser frequency is set to be 0-10 MHz, and the laser beam 1 with the set power and frequency is focused on the surface of the diamond 2 so as to process a surface flow channel 3 on the surface of the diamond 2. The size of the focusing light spot of the laser determines the width of the flow channel of the single processing surface, and when the focus of the laser beam 1 is focused on the diamond surface, the size of the focusing light spot is 0.1-100 um. The width of the surface flow channels 3 in the present invention is typically 0.1-1000 μm, and when a wider surface flow channel 3 is required to be prepared, it is typically achieved by adopting a multi-channel parallel processing mode. Preferably, when the chip requires the internal flow channel 3 of the nano-scale or more, i.e., micro-nano-scale, if the laser beam 1 is a femtosecond laser, the laser power is set to be within 10w, and if the laser beam 1 is a picosecond or nanosecond laser, the laser power is set to be 10-20w.
The laser type of the laser beam 1 may be a continuous laser or a pulsed laser, which is determined according to the processing size requirements and quality requirements of the surface flow channel 3. Continuous lasers are used to process flow channels of larger size and of generally higher quality, pulsed lasers are used to process flow channels of smaller size and higher quality.
Meanwhile, the surface runner 3 can be processed into a straight line, a fold line or any other shape by processing the runner by a laser processing method. Specifically, the laser beam 1 can scan a specific track in the xy plane under the drive of the moving platform so as to realize the required arbitrary flow channel shape; wherein the mobile platform adopts the existing platform which is matched with the laser to move.
2, as shown in fig. 3, the surface of the diamond 2 with the surface flow channel 3 is coated with a film, so that the inside of the surface flow channel 3 is filled with the film layer 4, and the surface of the diamond 2 is fully coated with the film layer 4. The film layer 4 is made of a metal material such as silver, copper, etc., which cannot react with the diamond material in a physical-chemical manner. Because the width of the surface runner 3 is nano-scale or even micro-nano-scale, the common method is difficult to cover the nano-scale or even micro-nano-scale runner during film plating, the invention preferably adopts a vacuum film plating method to coat the surface of the diamond 2, thereby ensuring the complete coverage of the film layer 4 in the surface runner 3. Meanwhile, the thickness of the film layer 4 in the surface runner 3 is larger than the depth (z direction) of the surface runner 3, so that the film layer 4 for coating is ensured to be filled in the surface runner 3.
And 3, as shown in fig. 4, grinding and cutting the surface of the diamond 2, removing the film layer 4 on the surface of the diamond 2, and retaining the film layer 4 in the surface runner 3. In the invention, the surface of the diamond 2 is preferably polished by adopting a mechanical polishing method, and the polishing cutter has the hardness larger than that of the film layer 4 and smaller than that of the diamond 2, so that the film layer 4 is removed by polishing and the surface of the diamond 2 is not influenced, and the surface of the diamond 2 is kept unchanged.
And 4, as shown in fig. 5, removing the surface film layer 4 to grow diamond upwards on the surface of the diamond 2 in the step 3 by adopting a chemical vapor deposition method, a high-temperature high-pressure method or other diamond growth methods, so as to form a finished diamond 5. In the growth process of the diamond, the fixed growth direction is the upward direction of the surface of the diamond 2, namely the z direction, and the film layer 4 in the surface flow channel 3 does not react with the diamond 2, so that the diamond can not grow in the area of the surface flow channel 3, and the diamond can grow in other areas of the surface of the diamond 2, thereby realizing the purpose of manufacturing the flow channel in the diamond.
The type of the diamond grown is the same as the type of the diamond 2 prepared in the step 1), namely if the diamond prepared in the step 1 is monocrystalline diamond, the diamond grown in the step 4 is monocrystalline diamond, and if the diamond prepared in the step 1 is polycrystalline diamond, the diamond grown in the step 4 is polycrystalline diamond. The diamond 2 is a non-grown diamond material, is the lower half part of the finished diamond 5, and is used for laser processing the surface flow channel 3, and the thickness of the diamond is 0.01-10mm. The finished diamond 5 is a grown diamond material, which is a final product of the diamond 2, for creating an internal flow channel, and has a thickness greater than that of the diamond 2, about 0.02-20mm.
As shown in fig. 6, the membrane layer 4 inside the flow channel is corroded by an acid solution, wherein the acid solution is a corrosive solution, such as sulfuric acid, hydrochloric acid, and the like. The film 4 and the finished diamond 5 do not react, so the film 4 is very easy to be removed, cleaning liquid with certain pressure is adopted to flush into the surface flow channel 3, the film 4 is taken out of the flow channel, and finally the surface flow channel 3 forms an internal flow channel, so that the processing of the diamond internal flow channel is completed.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (9)

1. The method for processing the diamond internal flow passage is characterized by comprising the following steps of:
preparing a surface runner (3) with the specification of nano-scale and above on the surface of the prepared diamond (2) through a laser beam (1);
coating a film on the surface of the diamond (2) with the surface runner (3) prepared, filling the film layer (4) in the surface runner (3), and simultaneously, filling the film layer (4) on the surface of the diamond (2); the film layer (4) is a metal material which does not react with the diamond material in a physical-chemical way;
grinding and cutting the surface of the diamond (2), removing a film layer (4) on the surface of the diamond (2), and reserving the film layer (4) in the surface runner (3);
removing the surface of the diamond (2) of the surface film layer (4) in the step 3, and growing the diamond upwards to form a finished diamond (5);
and 5, etching the film layer (4) inside the finished diamond (5) by adopting an acid solution, and removing the etched film layer (4), wherein the surface flow channel (3) forms an inner flow channel to finish the processing of the diamond inner flow channel.
2. A method of machining an internal flow channel of diamond according to claim 1, wherein:
in the step 2, the film layer (4) is made of silver material or copper material.
3. A method of machining an internal flow channel for diamond according to claim 2, wherein:
in the step 2, the thickness of the film layer at the corresponding position of the surface flow channel (3) is larger than the depth of the surface flow channel (3).
4. A method of machining an internal flow channel for diamond according to claim 3, wherein:
the type of diamond grown in the step 4 is the same as the type of diamond (2) prepared in the step 1);
the thickness of the diamond (2) prepared in the step 1 is 0.01-10mm;
the thickness of the finished diamond (5) formed in the step 4 is 0.02-20mm.
5. A method of machining an internal flow path of diamond according to claim 4, wherein:
in the step 2, the surface coating of the diamond (2) is specifically:
coating a film on the surface of the diamond (2) by adopting a vacuum coating method;
in the step 3, the grinding and cutting of the surface of the diamond (2) is specifically as follows:
the mechanical grinding method is adopted to grind and split the surface of the diamond (2), and the hardness of a grinding and splitting cutter is larger than that of the film layer (4) and smaller than that of the diamond (2);
in the step 4), the continuous growth of diamond on the surface of the diamond (2) is specifically as follows:
and continuing to grow diamond on the surface of the diamond (2) by adopting a chemical vapor deposition method or a high-temperature high-pressure method.
6. A method of machining an internal flow path of diamond according to claim 5, wherein:
in the step 1, the laser beam (1) is a Gaussian beam;
when the surface flow channel (3) is prepared, the focus of the laser beam (1) is focused on the surface of diamond, and the focused light spot size is as follows: 0.1-100 um.
7. A method of machining an internal flow path for diamond according to any one of claims 1 to 6, wherein:
in the step 1, the laser type of the laser beam (1) is continuous laser or pulse laser;
when preparing a surface flow channel (3) on the prepared diamond surface by a laser beam (1), the laser power of the laser beam (1) is set to be 0.1-1000W, and the laser frequency is set to be 0-10 MHz.
8. A method of machining an internal flow path of diamond according to claim 7, wherein:
in the step 1, the processing shape of the surface runner (3) is any shape, and the width of the surface runner (3) is 0.1-1000 mu m.
9. A method of machining an internal flow channel of diamond according to claim 8, wherein:
in the step 1, when the surface runner (3) is prepared, a multi-channel parallel processing mode is adopted for processing.
CN202310910208.6A 2023-07-24 2023-07-24 Diamond internal flow passage processing method Pending CN116968197A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310910208.6A CN116968197A (en) 2023-07-24 2023-07-24 Diamond internal flow passage processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310910208.6A CN116968197A (en) 2023-07-24 2023-07-24 Diamond internal flow passage processing method

Publications (1)

Publication Number Publication Date
CN116968197A true CN116968197A (en) 2023-10-31

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Country Status (1)

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