CN1170306C - Implementation of semiconductor light wave and optoelectronic device with unparallel cavity structure - Google Patents
Implementation of semiconductor light wave and optoelectronic device with unparallel cavity structure Download PDFInfo
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- CN1170306C CN1170306C CNB011200766A CN01120076A CN1170306C CN 1170306 C CN1170306 C CN 1170306C CN B011200766 A CNB011200766 A CN B011200766A CN 01120076 A CN01120076 A CN 01120076A CN 1170306 C CN1170306 C CN 1170306C
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- wedge
- light wave
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- shaped structure
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Abstract
The present invention relates to a preparation method of integrated semiconductor light wave and optoelectronic devices with a nonparallel cavity structure, particularly to a method for preparing a wedge-shaped structure on an extension layer of a semiconductor. The present invention is characterized in that a leading layer and a mask layer are formed on the surface of the extension layer; the mask layer on a relative position where the top end of the wedge-shaped structure is required to be formed is removed, and then the wedge-shaped structure is arranged in a corrosive liquid; the required wedge-shaped structure is taken out from the corrosive liquid after being realized. The inclination angle of the wedge-shaped structure can be adjusted by changing the corrosive speed ratio of the corrosive liquid to the leading layer material and the extension layer material. The method related by the present invention has the characteristic compatible with the semiconductor integrated technology, and has important and far-reaching influence on the development of light wave and optoelectronic devices in the future.
Description
Technical field:
The present invention relates to a kind of have the integrated semiconductor light wave of unparallel cavity structure and the preparation method of opto-electronic device, particularly a kind of method that on semiconductor epitaxial layers, prepares wedge structure.
Background technology
Present various semiconductor photoelectronic devices, its structural one big characteristics are exactly to belong to hierarchy on the direction perpendicular to its substrate, and (and being parallel to substrate surface) normally parallel to each other between each layer structure, this is because the semiconductor epitaxial growth technique determines.This structure has all been followed in the development of semiconductor device for many years.In recent years, along with the develop rapidly of optical communication, optical information processing technology, the effect of wedge structure play more and more key in optical waveguide interconnection (as the light wave mode conversion), demultiplexing receiving device (decoupling zero between parallel chamber) and angle dispersion element (as prism).In view of this, in photoelectricity integrated (OEIC) technology, arbitrary region on epitaxial loayer how, the wedge structure that prepare specific inclination angle, has an even surface, have cheap cost simultaneously, to satisfy the requirement of photoelectron technology application development, this is that the present invention grinds wound motivation place.
At present the preparation technology that wedge structure adopted mainly contains: laser is assisted epitaxy technology, selects regional extension (SAG) technology etc., but these Technology Needs growth apparatus transformed maybe needed to carry out repeatedly epitaxial growth, complex process, cost is higher.Designer of the present invention relies on the practical experience of being engaged in fields such as semiconducter research production and processing for many years, on the basis of feasibility study repeatedly, gets generation of the present invention eventually.
Summary of the invention:
The purpose of this invention is to provide a kind of method that on semiconductor epitaxial layers, prepares wedge structure, utilizing corrosive liquid is that selective corrosion realizes wedge structure to the corrosion rate difference of different materials, have technology simple, be easy to advantage such as realization, can obtain the wedge structure of various different angle simultaneously by the selectivity of regulating corrosive liquid, and wedge structure can be realized the optional position on epitaxial loayer.
Purpose of the present invention can realize by following mode:
A kind of implementation method of the present invention with semiconductor light wave and opto-electronic device of unparallel cavity structure, it is characterized in that, form guide layer and mask layer in epi-layer surface, remove mask layer, place HF/CrO then at the relative position on the wedge structure top that needs form
3Be in the selective corrosion liquid, from corrosive liquid, take out behind the wedge structure of needing realizing.
Principle of the present invention is that the corrosion rate of guide layer is very fast, and guide layer exposes the slower epitaxial loayer of adjacent corrosion rate gradually in sideetching, just erode away the shape of wedge structure like this on adjacent epitaxial loayer.During the guide layer thinner thickness, the inclination angle of inclined plane that erodes away is by the corrosion rate ratio decision of guide layer and epitaxial loayer.
The material of guide layer is not limited to semi-conducting material, as long as the corrosion rate of guide layer material and epitaxial film materials exists bigger difference just can erode away the inclined-plane, so guide layer can also can form by modes such as evaporation, coatings in epitaxial growth formation.But in order to obtain smooth inclined-plane, must satisfy following requirement: in corrosion process, along with the increase corrosion rate of the sideetching degree of depth remains unchanged, so corrosion mechanism belongs to reaction rate control rather than is determined by diffusion rate; Secondly, for the wedge structure that makes preparation has good optical characteristic (as low scattering loss), the roughness of corrosion surface should be as far as possible little.
Further illustrate the embodiment of the invention below in conjunction with accompanying drawing.
Description of drawings
Fig. 1 is the preceding structure chart of device corrosion of the present invention.
The structure chart of Fig. 2 after for device of the present invention corrosion.
1 ... mask layer 2 ... guide layer 3 ... epitaxial loayer 4 ... the GaAs substrate
Specific implementation:
The guide layer 2 of embodiment of the invention device and epitaxial loayer 3 are that epitaxial growth forms on GaAs substrate 4, surface at guide layer 2 forms one deck mask layer 1 again, relative position on the wedge structure top that needs form is removed mask layer, place corrosive liquid then, from corrosive liquid, take out behind the wedge structure of needing realizing, in the present embodiment device, guide layer 2 and epitaxial loayer 3 all are the AlGaAs material, but the Al component height in the Al ratio of component epitaxial loayer 3 in the guide layer 2, because the corrosion rate of guide layer 2 is higher than the corrosion rate of epitaxial loayer 3, guide layer 2 is in the time of sideetching, expose the slower epitaxial loayer of adjacent corrosion rate 3 surfaces gradually, so on adjacent epitaxial loayer 3, then erode away the wedge structure that the inclination angle is θ.
Selective corrosion liquid to the AlGaAs material has: citric acid/H
2O
2, NH
4OH/H
2O
2, NH
4F/HF etc., wherein citric acid/H
2O
2Corrosive liquid is to GaAs/Al
0.3Ga
0.7The selection of As can reach 116 than the highest, just begins the corrosion to AlGaAs but have only when citric acid reaches specific concentrations, and along with the further increase corrosion rate of citric acid concentration sharply rises; NH
4OH/H
2O
2The corrosion rate of corrosive liquid is extremely responsive to the pH value of solution, and the pH value of corrosive liquid is wayward simultaneously, so the corrosion rate relative difficult of these two kinds of corrosive liquids is accurately controlled; And NH
4F/HF solution is relatively poor less than 0.7 AlGaAs material corrosion effect for the component of Al, and then easily oxidized in air for the AlGaAs material that the Al component is higher, the selective corrosion liquid that present embodiment is preferentially selected for use is HF/CrO
3Solution, HF/CrO
3Solution is that a kind of high-resolution defective shows corrosive liquid, it is subjected to extensive studies to the corrosion rate of GaAs material, corrosion surface pattern etc., utilize its selective corrosion to tell the only epitaxial loayer of 7nm of thickness simultaneously, but the corrosion rate of AlGaAs material, corrosion surface pattern etc. are not but appeared in the newspapers as selective corrosion liquid to GaAs/AlGaAs.
The inventor has studied HF/CrO first
3Solution is to the wet etching of AlGaAs, by regulating HF/CrO
3The corrosive liquid component has changed the selectivity of corrosive liquid to guide layer 2 and epitaxial loayer 3; Thereby the wedge structure that on epitaxial loayer 3, prepare various inclination angles, has an even surface.Wherein regulate HF/CrO
3A kind of implementation method of corrosive liquid component is with certain density HF and CrO
3Solution mixes by different volume ratios.
Can be on the epitaxial loayer that has prepared wedge structure by other hierarchies of method continued growth such as conventional evaporation, extensions, to realize various photoelectric properties, the present invention has thoroughly removed restriction normally parallel to each other between each layer structure that the semiconductor epitaxial growth technique determined, will definitely produce important and far-reaching influence to the development of light wave and opto-electronic device from now on.The above is instantiation of the present invention and the know-why used, according to the equivalent transformation that conception of the present invention is done, and when the function that it produced does not exceed spiritual that specification and accompanying drawing contain yet, all should be within the scope of the invention, explanation hereby.
Claims (1)
1, a kind of implementation method with semiconductor light wave and opto-electronic device of unparallel cavity structure, it is characterized in that, form guide layer and mask layer in epi-layer surface, remove mask layer, place HF/CrO then at the relative position on the wedge structure top that needs form
3Be in the selective corrosion liquid, from corrosive liquid, take out behind the wedge structure of needing realizing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011200766A CN1170306C (en) | 2001-07-11 | 2001-07-11 | Implementation of semiconductor light wave and optoelectronic device with unparallel cavity structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011200766A CN1170306C (en) | 2001-07-11 | 2001-07-11 | Implementation of semiconductor light wave and optoelectronic device with unparallel cavity structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1335522A CN1335522A (en) | 2002-02-13 |
| CN1170306C true CN1170306C (en) | 2004-10-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011200766A Expired - Fee Related CN1170306C (en) | 2001-07-11 | 2001-07-11 | Implementation of semiconductor light wave and optoelectronic device with unparallel cavity structure |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100388575C (en) * | 2003-03-17 | 2008-05-14 | 北京邮电大学 | Method for making structure of wedge chamber and parallel chamber in indium phosphide based photoelectronic device |
| JP5767796B2 (en) * | 2010-09-28 | 2015-08-19 | 林純薬工業株式会社 | Etching solution composition and etching method |
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2001
- 2001-07-11 CN CNB011200766A patent/CN1170306C/en not_active Expired - Fee Related
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| CN1335522A (en) | 2002-02-13 |
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Granted publication date: 20041006 Termination date: 20130711 |