CN117310858A - Design and manufacturing method of 45-degree silicon reflecting mirror - Google Patents
Design and manufacturing method of 45-degree silicon reflecting mirror Download PDFInfo
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- CN117310858A CN117310858A CN202311415984.5A CN202311415984A CN117310858A CN 117310858 A CN117310858 A CN 117310858A CN 202311415984 A CN202311415984 A CN 202311415984A CN 117310858 A CN117310858 A CN 117310858A
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- reflecting mirror
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- silicon substrate
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 83
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 83
- 239000010703 silicon Substances 0.000 title claims abstract description 83
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 43
- 239000011248 coating agent Substances 0.000 claims abstract description 38
- 238000000576 coating method Methods 0.000 claims abstract description 38
- 239000000178 monomer Substances 0.000 claims abstract description 16
- 238000005520 cutting process Methods 0.000 claims abstract description 14
- 238000003698 laser cutting Methods 0.000 claims abstract description 14
- 238000005516 engineering process Methods 0.000 claims abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 10
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000002310 reflectometry Methods 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000012788 optical film Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 238000005253 cladding Methods 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 description 20
- 238000001039 wet etching Methods 0.000 description 5
- 238000005498 polishing Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000012768 molten material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0808—Mirrors having a single reflecting layer
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
The invention provides a design and manufacturing method of a 45-degree silicon reflector, which comprises the steps of coating a layer of photoresist on the surface of a silicon substrate, and making at least two patterns which are mutually spaced and parallel through photoetching; removing photoresist on the silicon substrate after a layer of reflective coating is preplated on the surface of the silicon substrate, exposing a photoresist coverage area on the surface of the silicon substrate to be used as a cutting site, cutting the silicon substrate from the positions of each pattern by utilizing a laser cutting technology to obtain at least one reflecting mirror monomer, wherein the end face of the reflecting mirror monomer preplated with the reflective coating is a reflecting mirror face, and a 45-degree inclined plane is used as a mounting bottom surface to form a 45-degree reflecting mirror; the process of obtaining the reflector does not involve the procedures of etching, cladding and the like with larger operation precision requirements, and the flat cutting surface is used as the mounting bottom surface to facilitate the assembly of the reflector.
Description
Technical Field
The invention relates to the technical field of preparation, in particular to a design and manufacturing method of a 45-degree silicon reflecting mirror.
Background
The 45-degree reflecting mirror is widely used in an optical system, and the main function of the 45-degree reflecting mirror can directly convert a light path by 90 degrees, so that incident light and emergent light form a right angle of 90 degrees. In the chip, the 45-degree reflecting mirror can directly reflect the incident light in the waveguide vertically out of the chip, and compared with reflecting mirrors at other angles, the reflecting mirror is simpler and more convenient, has lower cost and is widely applied.
Currently, the 45-degree reflector is manufactured by wet etching. Specifically, a silicon wafer having a (100) crystal plane is generally used, and a (111) crystal plane or a (110) crystal plane is etched by a chemical method. (111) The crystal face has stable and smooth properties, can be directly used as an optical reflector surface, but the included angle between the (111) crystal face and the (100) crystal face is 54.74 degrees, 45 degrees are needed to be formed by a special packaging technology later, the process is complex, and the yield is low. In addition, although the included angle between the (110) crystal face and the (100) crystal face is 45 degrees, the etching rate of the (110) crystal face is high, the etching condition needs to be strictly controlled, the etched surface is rough, the reflecting surface needs to be polished, the process is complex, and the yield is low.
Chinese patent No. CN114594540a provides a 45 ° silicon-based mirror and a method for manufacturing the same, in which a (110) crystal plane of 45 ° is etched from a (100) silicon wafer, then the etched silicon wafer is cut into small mirror precursors, and the mirror precursors are fixed in a special fixture to polish the etched (110) crystal plane, thereby forming a highly reflective mirror crystal plane. The technological difficulties are that the wet etching condition is controlled and the (110) crystal face polishing treatment is carried out, and the requirements on the subsequent polishing process are higher because the size of the reflector precursor after the silicon wafer is divided is smaller, and the wet etching condition is more severe, and the external environment has larger influence on the (110) crystal face, so that the method is not beneficial to mass production popularization.
The invention of China patent CN112764144A provides a design and manufacture structure and a manufacture method of a 45-degree silicon reflector, wherein an included angle of 54.74 degrees formed by a (111) crystal face is etched on a (100) silicon wafer, and then a groove with a certain depth is etched on a base of the reflector to enable the bottom of the reflector to incline downwards by a certain angle, so that the formed (111) face forms an angle of 45 degrees with a horizontal plane.
Chinese patent No. 112782794a provides a design and fabrication structure and fabrication method of a 45 ° silicon mirror, in which a (100) plane silicon wafer is etched to form a (110) plane at 45 ° to a bottom surface, and then a layer of molten material is coated on a rough (110) plane and melted by heating, and the melted material covers the (110) plane to form a smooth (110) plane. The technology has the advantages of complex manufacture, high cost, high process difficulty, great influence on later-stage plating due to the fact that the coating and melting processes of the molten materials are difficult to control, great limitation and inconvenience in mass production popularization.
In summary, the 45 ° silicon mirror design and manufacturing method adopted at present is not beneficial to mass production and needs to be installed by a specially adapted base, or needs to be polished, etched or surface clad by a complex post-treatment process, while the conventional wet etching method has large process difficulty and needs extremely precise process parameter control, so that the existing 45 ° silicon mirror is extremely difficult to prepare and subsequently process.
Disclosure of Invention
In view of this, the invention provides a design and manufacturing method of a 45 ° silicon mirror, which is used for solving the problems encountered by the 45 ° silicon mirror adopted at present, or the manufactured 45 ° silicon mirror is shaped, which is unfavorable for mass production and needs to be installed by a specially adapted base, or a complex post-treatment process is needed for polishing, etching or surface cladding, while the conventional wet etching method has a large process difficulty, and extremely precise process parameter control is needed, so that the problems of extremely large preparation and subsequent treatment difficulties of the 45 ° silicon mirror at present are caused.
The technical scheme of the invention is realized as follows: the invention provides a design and manufacturing method of a 45-degree silicon reflector, which comprises the following steps,
step one, after a layer of photoresist is coated on the surface of a silicon substrate, at least two patterns which are mutually spaced and parallel are made through photoetching, and the extending direction of the patterns is intersected with the layout direction of the patterns;
step two, after a layer of reflective coating is pre-coated on the surface of the silicon substrate, photoresist on the silicon substrate is removed, so that the reflective coating positioned in the pattern on the surface of the silicon substrate is removed;
and thirdly, cutting the silicon substrate from the positions of the patterns by utilizing a laser cutting technology to obtain at least one reflecting mirror monomer, wherein the included angle between the laser irradiation direction and the surface of the silicon substrate is greater than zero degrees and not greater than ninety degrees, and the end face of the preplating reflecting coating on the reflecting mirror monomer is a reflecting mirror surface.
Based on the above technical solution, preferably, in the third step, an included angle between the laser irradiation direction and the surface of the silicon substrate is forty-five degrees.
Still more preferably, in step three, the laser cuts the silicon substrate in the pattern extending direction.
Still more preferably, in the third step, the mirror unit is mounted with one of the cut surfaces of the mirror unit adjacent to the mirror surface as a mounting bottom surface.
Still more preferably, the length of the reflecting mirror surface is the same as the length of the mounting bottom surface.
Based on the above technical solution, preferably, in the second step, the reflective coating is obtained by sputtering technology as a high-reflectivity coating.
Still more preferably, in the third step, the high-reflectance coating film is a metal film or an optical film.
On the basis of the technical scheme, the method preferably further comprises the following step of removing silicon dioxide at the edge of the reflecting mirror surface by using a chemical cleaning technology to obtain the smooth reflecting mirror surface.
On the basis of the above technical solution, preferably, in the step one, the pattern extending direction is a direction perpendicular to the pattern laying direction.
Compared with the prior art, the design and manufacturing method of the 45-degree silicon reflecting mirror has the following beneficial effects:
(1) According to the invention, the reflecting coating is preplated on the silicon substrate, the irradiation direction of the laser is adjusted, the silicon substrate is cut into a plurality of reflecting mirror monomers with the reflecting coating respectively through the laser, the reflecting mirror with regular and uniform shape can be obtained, the working procedures with larger operation precision requirements such as etching and cladding are not involved in the process of obtaining the reflecting mirror, and the flat cutting surface is used as a mounting bottom surface to facilitate the assembly of the reflecting mirror.
(2) According to the invention, the reflective coating is pre-plated on the silicon substrate, and then the silicon substrate is cut according to the position of the reflective coating to obtain a product, instead of cutting to obtain the appearance of the product, and then cladding the coating, so that the process flow of product preparation is greatly shortened, the subsequent processing procedures are reduced, and the operation difficulty of post-processing is reduced.
(3) According to the invention, by controlling the included angle between the laser irradiation direction and the upper surface of the silicon substrate and the included angle between the cutting laser moving path and the length direction of the silicon substrate, the reflecting mirror with different reflecting angles can be obtained according to actual requirements, and the special-shaped reflecting mirror with the reflecting mirror surface inclined to the side surface can be obtained, so that the application range of the product is improved.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a perspective view of a silicon substrate of the present invention;
fig. 2 is a front view of a silicon substrate of the present invention;
FIG. 3 is a schematic view of cutting a silicon substrate according to the present invention;
FIG. 4 is a front view of a mirror cell of the present invention;
FIG. 5 is a perspective view of a mirror cell of the present invention;
fig. 6 is a front view of a mounting state of a mirror unit of the present invention;
FIG. 7 is a front view of another embodiment of the silicon substrate of the present invention after being cut;
fig. 8 is a top view of another embodiment of the silicon substrate of the present invention after being cut.
In the figure: 1. a silicon substrate; 101. a pattern; 2. a reflective coating; 3. a mirror monomer; 301. a reflecting mirror surface; 302. and (5) attaching the bottom surface.
Detailed Description
The following description of the embodiments of the present invention will clearly and fully describe the technical aspects of the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, are intended to fall within the scope of the present invention.
As shown in fig. 1, a method for designing and manufacturing a 45 ° silicon mirror according to the present invention includes the following steps,
step one, referring to fig. 1, after a layer of photoresist is coated on the surface of a silicon substrate 1, at least two patterns 101 which are spaced from each other and parallel to each other are made by photolithography, wherein a rectangular shape formed by a narrower part between two dotted lines in the figure is the pattern 101, and the extending direction of the pattern 101 is intersected with the layout direction of the pattern 101; in an ideal situation, the pattern 101 may be a line, and the pattern 101 extending along the line moves to cut during laser cutting, but in practical implementation, in order to improve fault tolerance, the pattern 101 is preferably a rectangular shape as shown in the figure, and since the pattern 101 has a certain width, products can be obtained by only cutting in the pattern 101 during laser cutting, and even if laser cutting positions in two adjacent patterns 101 are not consistent, laser cutting is not affected to obtain the reflector monomer 3 with the reflective coating 2; however, if the width of the pattern 101 is too large, the laser cutting positions in two adjacent patterns 101 are too far shifted, and the obtained two mirror units 3 are too large in size difference, and in order to improve the uniformity of the obtained product size to improve the quality of mass production of the product, the width of the pattern 101 should not be too large, and it is preferable that the width of the pattern 101 along the extending direction of the length thereof is 50-100 μm.
Step two, referring to fig. 2, the silicon substrate 1 is a silicon wafer having a (110) crystal face, after a layer of reflective coating 2 is pre-coated on the surface of the silicon substrate 1 by PVD technology, photoresist on the silicon substrate 1 is removed by wet photoresist removing technology, so that the reflective coating 2 on the surface of the silicon substrate 1 in the pattern 101 is removed, and a plurality of reflective coating 2 units are formed on the silicon substrate 1 at intervals. The reflective coating 2 is extremely thin and substantially flush with the surface of the silicon substrate 1, but the reflective coating 2 is formed to have a certain thickness in the drawings for convenience of understanding in the drawings.
Step three, referring to fig. 3, at least one mirror monomer 3 as shown in fig. 4 is obtained by cutting a silicon substrate 1 from a position of each pattern 101 by using a laser cutting technology, the mirror monomer 3 is obtained by cutting two adjacent lasers, and the end surface of a preplating reflection coating 2 on the mirror monomer 3 is a reflection mirror surface 301; referring to fig. 6, the included angle between the laser irradiation direction and the surface of the silicon substrate 1 is greater than zero degrees and not greater than ninety degrees, for example, if a mirror with a reflection angle of 120 degrees is to be obtained in this embodiment, the included angle between the laser irradiation direction and the surface of the silicon substrate 1 is 60 degrees, so that different mirrors can be manufactured according to the actual reflection angle requirement in the method, thereby expanding the applicability and versatility of the method. In addition, the power of the laser is in the range of 5-10W.
Compared with the existing various manufacturing methods, the manufacturing method of the reflecting mirror has the advantages that:
firstly, the process sequence of the invention is that firstly, the setting position of the reflecting coating 2 is determined on the silicon substrate 1 through photoetching, a layer of reflecting coating 2 is preplating, and the reflecting mirror monomers 3 respectively provided with the reflecting coating 2 are cut through a laser cutting technology, so that the subsequent working procedures of cladding or coating on crystal faces to form reflecting surfaces are omitted.
Secondly, the invention utilizes the reflection coating 2 arranged on the crystal face as a reflection surface, thereby avoiding the process of polishing the crystal face to form a flat and smooth emission surface after cutting.
Thirdly, the product can be obtained through twice laser cutting without carrying out multiple laser cutting operations or chemical etching operations, the working procedure time is greatly shortened, the working procedure difficulty is reduced, and the reflection angle of the reflecting mirror surface 301 of the obtained reflecting mirror monomer 3 can be controlled by controlling the included angle between the laser irradiation direction and the crystal face, so that the production of the product can be adapted to various reflection angle requirements.
In a preferred embodiment shown in fig. 3, the laser irradiation direction is at an angle of forty-five degrees to the surface of the silicon substrate 1 in step three, since a right angle mirror is most commonly used in the art.
In a preferred embodiment shown in fig. 7, the invention may actually cut off a mirror with a certain special shape, and in step three, the laser will typically cut off the silicon substrate 1 along the direction in which the pattern 101 extends. So as to effectively control the cutting path of the laser; if the extending direction of the pattern 101 forms an acute angle with the longitudinal direction of the silicon substrate 1 and the laser irradiation direction forms an angle of 45 degrees with the upper surface of the silicon substrate 1, the obtained reflecting mirror surface 301 of the reflecting mirror unit 3 is an inclined parallelogram, and at this time, a cut surface of the reflecting mirror unit 3 adjacent to the reflecting mirror surface 301 is used as the bottom surface of the flat reflecting mirror unit 3, the reflecting mirror surface 301 of the reflecting mirror unit 3 is still a right angle reflecting surface, but the outer contour of the reflecting mirror unit 3 is a special shape inclined to one side with respect to the bottom surface, so that certain special installation environments can be adapted.
In a preferred embodiment shown in fig. 5, in step three, in order to stably mount the product on the optical device, the mirror unit 3 is usually mounted with one of the cut surfaces of the mirror unit 3 adjacent to the mirror surface 301 as the mounting bottom surface 302, and since the cut surface is formed by laser cutting, the cut surface is usually flat and smooth even if no subsequent polishing is required, so that stable mounting is facilitated.
In a preferred embodiment shown in fig. 4, the length of the reflecting mirror surface 301 is the same as that of the mounting bottom surface 302 as the reflecting mirror unit 3 of the reflecting mirror product, specifically, the length of the reflecting mirror surface 301 along the length direction of the silicon substrate 1 is not less than 500 μm, and is usually 500 to 900 μm; the width of the silicon substrate 1 is also not less than 500 μm, and the thickness of the silicon substrate 1 is generally 300 to 500 μm; therefore, the size of the mirror unit 3 manufactured by the method of the invention is not too small, but the manufacturing method of the invention can be used for manufacturing the mirror with extremely small size.
In a preferred embodiment shown in fig. 4, after the photolithography process of step one is completed, in order to enable the product to adapt to light of different wavelengths and to have a higher reflectivity when reflecting light of different wavelengths, in step two, the reflective coating 2 may be obtained by sputtering technology as a high-reflectivity coating, so as to achieve a better reflectivity.
In a preferred embodiment shown in fig. 4, in step three, the high reflectivity coating is a metal film or an optical film. Metal film mirrors are suitable for many applications, but laser applications often require higher reflectivity than standard metal films, so multilayer dielectric HR films can be used instead of metal films.
In a preferred embodiment shown in fig. 1, since the temperature is high at the time of laser cutting, it is difficult to avoid the generation of silica dust, and the dust is easily stuck to the edge of the mirror face 301 having the reflective coating 2 at a high temperature, and in order to remove the silica dust, the following step is included, and the silica on the edge of the mirror face 301 is removed by using a chemical cleaning technique, so that a smooth mirror face 301 is obtained. In the case of the above-mentioned micro-treatment, a 10 to 49% HF solution may be used in addition to the BOE solution, and the same effect can be achieved.
In a preferred embodiment shown in fig. 1, in step one, the pattern 101 extends in a direction perpendicular to the direction in which the pattern 101 is arranged, so that the laser cuts out the regularly shaped mirror elements 3.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, alternatives, and improvements that fall within the spirit and scope of the invention.
Claims (9)
1. The design and manufacturing method of the 45-degree silicon reflector is characterized by comprising the following steps of:
step one, after a layer of photoresist is coated on the surface of a silicon substrate (1), at least two patterns (101) which are mutually spaced and parallel are made through photoetching, and the extending direction of the patterns (101) is intersected with the layout direction of the patterns (101);
step two, after a layer of reflective coating (2) is pre-coated on the surface of the silicon substrate (1), removing photoresist on the silicon substrate (1) to remove the reflective coating (2) positioned in the graph (101) on the surface of the silicon substrate (1);
and thirdly, cutting the silicon substrate (1) from the positions of each graph (101) by utilizing a laser cutting technology to obtain at least one reflecting mirror monomer (3), wherein an included angle between the laser irradiation direction and the surface of the silicon substrate (1) is larger than zero degrees and not larger than ninety degrees, and the end face of the pre-plating reflecting coating (2) on the reflecting mirror monomer (3) is a reflecting mirror face (301).
2. The method for designing and fabricating a 45 ° silicon mirror according to claim 1, wherein: in the third step, the included angle between the laser irradiation direction and the surface of the silicon substrate (1) is forty-five degrees.
3. The method for designing and fabricating a 45 ° silicon mirror according to claim 2, wherein: in the third step, the laser cuts the silicon substrate (1) along the extending direction of the pattern (101).
4. A method of designing and fabricating a 45 ° silicon mirror according to claim 3, wherein: in the third step, one of the cut surfaces adjacent to the reflecting mirror surface (301) on the reflecting mirror monomer (3) is used as a mounting bottom surface (302) to mount the reflecting mirror monomer (3).
5. The method for designing and fabricating a 45 ° silicon mirror according to claim 4, wherein: the length of the reflecting mirror surface (301) is the same as the length of the mounting bottom surface (302).
6. The method for designing and fabricating a 45 ° silicon mirror according to claim 1, wherein: in the second step, the reflective coating (2) is obtained by a sputtering technology and is a high-reflectivity coating.
7. The method for designing and fabricating a 45 ° silicon mirror according to claim 6, wherein: in the third step, the high-reflectivity coating film is a metal film or an optical film.
8. The method of designing and fabricating a 45 ° silicon mirror according to claim 1, further comprising the steps of:
and step four, removing silicon dioxide at the edge of the reflecting mirror surface (301) by using a chemical cleaning technology to obtain the smooth reflecting mirror surface (301).
9. The method for designing and fabricating a 45 ° silicon mirror according to claim 1, wherein: in the first step, the extending direction of the pattern (101) is the perpendicular direction of the layout direction of the pattern (101).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311415984.5A CN117310858A (en) | 2023-10-30 | 2023-10-30 | Design and manufacturing method of 45-degree silicon reflecting mirror |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311415984.5A CN117310858A (en) | 2023-10-30 | 2023-10-30 | Design and manufacturing method of 45-degree silicon reflecting mirror |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117310858A true CN117310858A (en) | 2023-12-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311415984.5A Pending CN117310858A (en) | 2023-10-30 | 2023-10-30 | Design and manufacturing method of 45-degree silicon reflecting mirror |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117310858A (en) |
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2023
- 2023-10-30 CN CN202311415984.5A patent/CN117310858A/en active Pending
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