CN114594540A - 45-degree silicon-based reflector and manufacturing method thereof - Google Patents
45-degree silicon-based reflector and manufacturing method thereof Download PDFInfo
- Publication number
- CN114594540A CN114594540A CN202210237801.4A CN202210237801A CN114594540A CN 114594540 A CN114594540 A CN 114594540A CN 202210237801 A CN202210237801 A CN 202210237801A CN 114594540 A CN114594540 A CN 114594540A
- Authority
- CN
- China
- Prior art keywords
- reflector
- polishing
- silicon
- cutting
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 72
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 72
- 239000010703 silicon Substances 0.000 title claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000002243 precursor Substances 0.000 claims abstract description 40
- 238000005498 polishing Methods 0.000 claims abstract description 34
- 238000005520 cutting process Methods 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000013078 crystal Substances 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 23
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 239000004094 surface-active agent Substances 0.000 claims description 6
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 230000035484 reaction time Effects 0.000 claims description 3
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical compound [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 abstract description 10
- 238000005260 corrosion Methods 0.000 abstract description 10
- 230000007547 defect Effects 0.000 abstract description 2
- 238000003672 processing method Methods 0.000 abstract description 2
- 238000002310 reflectometry Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 22
- 239000000243 solution Substances 0.000 description 16
- 230000003287 optical effect Effects 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000007771 core particle Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 101100008049 Caenorhabditis elegans cut-5 gene Proteins 0.000 description 1
- 101100008050 Caenorhabditis elegans cut-6 gene Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0808—Mirrors having a single reflecting layer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Weting (AREA)
Abstract
The invention discloses a 45-degree silicon-based reflecting mirror and a manufacturing method thereof. The manufacturing method comprises the following steps: the surface of a silicon wafer with a 100 crystal face is directionally corroded along the 110 direction to generate an inclined plane and directionally corroded along the 100 direction to generate a parallel plane, and a reflector aggregate is obtained; cutting and separating the reflector assembly to obtain a reflector precursor; polishing the roughness grade of the inclined surface in the reflector precursor to a mirror surface grade; and cutting and separating the polished reflector precursor to obtain the 45-degree silicon-based reflector. According to the manufacturing method provided by the invention, the 45-degree base surface is obtained firstly through corrosion, and then the 45-degree inclined surface is polished to the mirror surface level through a cold processing method, so that the technical defects in the prior art are overcome, the reflectivity of the silicon-based reflector is greatly improved, the technical process and the structure of the reflector are simple, the manufacturing cost is obviously reduced, and the requirements of wide application are met.
Description
Technical Field
The invention relates to the technical field of optical precision machining, in particular to a 45-degree silicon-based reflecting mirror and a manufacturing method thereof.
Background
At present, a silicon chip with a (100) crystal face is generally adopted for preparing a silicon-based reflecting mirror by a wet etching method, an inclined plane (111) face and the crystal face (100) are etched, an included angle between two etched faces generated by etching is 54.74 degrees, the (111) face is used as a reflecting face, and the (111) face is stable and smooth in property and can be directly used as an optical reflecting mirror face.
The 45-degree reflector is widely applied to an optical system, and has the functions of 90-degree conversion of a light path and 90-degree included angle formation of incident light and reflected light. In the silicon photonic integrated chip, the 45-degree reflector can vertically reflect the light in the waveguide out of the chip, and the optical path adjustment is simpler than that of a 54.74-degree silicon reflector prepared by other angles, such as wet etching, and the silicon etched 45-degree reflector has high application value due to the integration level and cost requirements.
However, it is difficult to produce a 45 ° mirror surface that can be used as a reflection surface directly from the silicon wafer of (100), and the main reason for this is that the microstructures of the surfaces of the (100) surface and the (110) surface (whose included angle is 45 °) after wet etching are uneven and have slight pits (relatively coarse), and thus they cannot be used as a reflection surface of an optical mirror surface directly.
Chinese patent CN112764144A discloses a design and manufacturing structure and method for a 45 ° silicon reflector, which utilizes a plane with an included angle of 54.74 ° (111) and a step structure designed on the back of the silicon reflector to adjust the angle of the reflector, so as to form a 45 ° angle, but after molding, the upper and lower surfaces are not parallel, and the bottom cannot be stably fixed;
chinese invention patent CN112782794A also provides a 45 DEG angle reflector surface smoothness manufacturing structure and manufacturing method, covering the rough 45 DEG reflecting surface formed by the (110) surface with melting material and heating to melt to form a smooth plane and plating a metal reflecting layer, thereby overcoming the problem of overlarge roughness of the (110) surface, the technology has the disadvantages of complex structure, high cost, incapability of meeting the requirement of a pure silicon substrate, limitation and being not beneficial to the wide application of a silicon-based 45 DEG reflector;
disclosure of Invention
In view of the deficiencies of the prior art, it is an object of the present invention to provide a 45 ° silicon based mirror and method of making the same that combines wet etching and cold working.
In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:
in a first aspect, the present invention provides a method for manufacturing a 45 ° silicon-based mirror, comprising:
1) the surface of a silicon wafer with a 100 crystal face is directionally corroded along the 110 direction to generate an inclined plane and directionally corroded along the 100 direction to generate a parallel plane, and a reflector aggregate is obtained;
2) cutting and separating the reflector assembly to obtain a reflector precursor;
3) polishing the roughness grade of the inclined surface in the reflector precursor to a mirror surface grade;
and 4) cutting and separating the polished reflector precursor to obtain the 45-degree silicon-based reflector.
In a second aspect, the invention further provides a 45 ° silicon base reflector manufactured by the above manufacturing method, where the 45 ° silicon base reflector includes an inclined surface forming an angle of 45 ° with its bottom surface, and the roughness grade of the inclined surface is a mirror surface grade.
Based on the technical scheme, compared with the prior art, the invention has the beneficial effects that at least:
according to the manufacturing method of the 45-degree silicon-based reflecting mirror, the 45-degree base surface is obtained firstly through corrosion, then the 45-degree inclined surface is polished to the mirror surface level through a cold processing method, the technical defects at present are overcome, the reflectivity of the silicon-based reflecting mirror is greatly improved, the process and the structure of the reflecting mirror are simple, the manufacturing cost is obviously reduced, and the requirements of wide application are met.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to enable those skilled in the art to more clearly understand the technical solutions of the present invention and to implement them according to the content of the description, the following description is made with reference to the preferred embodiments of the present invention and the detailed drawings.
Drawings
FIG. 1 is a schematic partial flow diagram of a method for fabricating a 45 silicon based mirror according to an exemplary embodiment of the present invention;
FIG. 2 is a schematic partial flow chart of a method for fabricating a 45 silicon based mirror according to an exemplary embodiment of the present invention;
FIG. 3 is a schematic partial flow diagram of a method of fabricating a 45 silicon based mirror according to an exemplary embodiment of the present invention;
description of reference numerals: 1. a silicon wafer; 2. an inclined surface; 3. a parallel plane; 4. a bottom surface; 5. first cutting; 6. second cutting; 7. a second cut surface; 8. a first clamping surface; 9. a second clamping surface; 10. a holding tool; 11. polishing a plane; 12. a mirror precursor.
Detailed Description
In view of the deficiencies in the prior art, the inventors of the present invention have made extensive studies and extensive practices to provide technical solutions of the present invention. The technical solution, its implementation and principles, etc. will be further explained as follows.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced otherwise than as specifically described herein, and thus the scope of the present invention is not limited by the specific embodiments disclosed below.
Moreover, relational terms such as "first" and "second," and the like, may be used solely to distinguish one element or method step from another element or method step having the same name, without necessarily requiring or implying any actual such relationship or order between such elements or method steps.
Referring to fig. 1-3, a method for fabricating a 45 ° silicon based mirror according to an embodiment of the present invention includes the following steps:
1) a surface of a silicon wafer 1 having a 100-plane is etched in a direction 110 to form an inclined surface 2 and in a direction 100 to form a parallel surface 3, and the inclined surface 2 and the parallel surface 3 form an included angle of 45 DEG, thereby obtaining a mirror assembly.
2) The mirror precursor 12 is obtained by cutting and separating the mirror assembly.
3) Polishing the roughness grade of the inclined surface in the reflector precursor to a mirror surface grade.
And, 4) cutting and separating the polished mirror precursor 12 to obtain a 45 DEG silicon-based mirror.
100/110 refers to the lattice direction in the silicon wafer 1, and the mirror assembly may include a plurality of mirror precursors 12 and corresponding leftover parts, may include only a plurality of mirror precursors 12, and more may include only one mirror precursor 12; the cutting can be mechanical cutting by a cutting tool, laser cutting or water jet cutting, and preferably mechanical cutting, so that the cutting precision is higher.
Based on the embodiment, the method successfully prepares the 45-degree silicon-based reflector with the mirror surface grade by combining wet etching and polishing, has simple polishing process and strong controllability, and is very favorable for large-scale production.
In some embodiments, step 1) may specifically include the steps of:
pre-plating a 50-200nm SiN layer on the silicon wafer, covering the SiN layer with photoresist with the thickness of 2-4um as a mask, and forming a plurality of rectangular openings which are parallel to each other and have 45-degree bevel edges; more specifically, the method comprises the following steps: pre-plating 50-200nm of SiN on a silicon wafer, performing open-hole photoetching by using photoresist with the thickness of 2-4um, then performing dry etching to open holes on the SiN layer, and forming a series of rectangular holes in the SiN layer for selective corrosion.
And etching the silicon wafer 1 from the opening by using an etching solution.
In some embodiments, the etching solution may include an alkaline etching solution.
In some embodiments, the solute in the etching solution may include TMAH and/or potassium hydroxide, sodium hydroxide.
In some embodiments, the mass fraction of TMAH in the etching solution may preferably be 10 to 40%.
In some embodiments, the solute of the etching solution may further include a surfactant.
In some embodiments, the surfactant may include any one or a combination of two of triton, tert-butanol.
In some embodiments, the reaction temperature of the directional etching may preferably be 70 to 90 ℃.
In some embodiments, the reaction time of the directional etching is 5-10 h, and for those skilled in the art, the reaction time of the specific directional etching can be determined by calculation or multiple tests according to the depth requirement of the required etching.
With continued reference to fig. 2, in some embodiments, step 2) may specifically include the steps of:
a first cut 5 is made along the intersection of the inclined plane 2 and the parallel plane 3 and perpendicular to the silicon wafer 1, resulting in a first cut plane.
A second cut 6 is made along the middle line of two adjacent inclined surfaces 2 and perpendicular to the silicon wafer 1, resulting in a second cut surface 7.
An elongated structure between the adjacent first cut surface and second cut surface 7 is used as the mirror precursor 12.
It can be understood that the etching grooves formed by etching each parallel surface 3 and its two adjacent inclined surfaces 2 in the above technical solution should penetrate through the silicon wafer 1 in the radial direction of the silicon wafer 1 to make maximum use of the radial dimension of the silicon wafer 1, so that the long-strip-shaped mirror precursors 12 can be cut and separated along the first cut surface and the second cut surface 7, and the inclined surfaces 2 on each mirror precursor 12 can be in the same plane without protrusions to block polishing. The above structure can be realized by patterned photoresist with a strip array of openings.
With continued reference to fig. 3, in some embodiments, step 3) may specifically include the steps of:
a plurality of mirror precursors 12 are fixed to a holder 10, and inclined surfaces 2 of the plurality of mirror precursors 12 are located on the same polishing plane 11.
And thinning and polishing the polishing plane 11 until the roughness grades of the inclined planes 2 are mirror surface grades.
With continued reference to fig. 3, in some embodiments, the holder 10 includes an elongated holding port including a first holding surface 8 and a second holding surface 9 perpendicular to each other, the first holding surface 8 mating with the second cutting surface 7, the second holding surface 9 mating with the bottom surface 4 of the mirror precursor 12.
In some embodiments, the thinning polishing manner may be CMP, the polishing paste includes cerium oxide, and the polishing speed is preferably 30-100 rpm.
In some embodiments, the roughness of the tilted surface 2 of the mirror precursor 12 after the thinning polishing is less than 10 nm.
Based on the technical scheme, the bottom surface 4 and the second cutting surface 7 of the reflector precursor 12 are fully fixed and positioned by utilizing the first clamping surface 8 and the second clamping surface 9 in the clamping tool and are matched with each other, so that the reflector precursor 12 is positioned very accurately and firmly, meanwhile, the design of the clamping tool can ensure that a plurality of reflector precursors 12 are simultaneously fixed on the clamping tool, all inclined surfaces 2 of the clamping tool form an integral polishing plane 11, batch polishing can be simultaneously carried out, the product consistency is improved, the yield is obviously improved, and the manufacturing cost is reduced.
In some embodiments, step 4) may specifically include the following steps:
and cutting along the length direction of the polished long strip-shaped reflector precursor 12 at preset intervals to obtain a plurality of 45-degree silicon-based reflectors.
In some embodiments, the predetermined distance may preferably be equal to the distance between the first and second cutting faces. So that the bottom surface of the reflector is formed into a square shape, and the subsequent processing and application are convenient.
As a specific application example, the method for manufacturing the 45 ° silicon-based mirror provided by the present invention can be implemented by the following steps:
1. an etching solution comprising a surfactant is provided.
2. The mixed solution of TMAH and surfactant triton was used for pre-etching to obtain a 45 ° inclined surface 2.
3. The silicon wafer thus produced was cut into bars (i.e., the mirror precursor 12) and fixed in a 90 ° rest (i.e., the holder 10) as shown in fig. 3, and subjected to thinning polishing.
4. And cleaning the bar to remove the fixing glue.
5. And placing the strips after the photoresist is removed in sequence, and cutting the strips into single core particles (namely the 45-degree silicon-based reflecting mirror).
6. And cleaning the core particles by using a cleaning machine.
The embodiment of the invention also provides the 45-degree silicon-based reflecting mirror manufactured by the manufacturing method in any one of the above embodiments, the 45-degree silicon-based reflecting mirror comprises an inclined surface 2 forming an included angle of 45 degrees with a bottom surface 4 of the 45-degree silicon-based reflecting mirror, and the roughness grade of the inclined surface 2 is mirror surface grade.
The technical scheme of the invention is further explained in detail by a plurality of embodiments and the accompanying drawings. However, the examples are chosen only for the purpose of illustrating the invention and are not to be construed as limiting the scope of the invention.
Example 1
The embodiment provides a method for manufacturing a 45-degree silicon-based reflecting mirror, which specifically comprises the following steps:
1) selecting a 4-inch round 100 silicon wafer 1, forming an SiN mask with the thickness of 200nm on the upper surface of the silicon wafer, covering a photoresist with the thickness of 3 microns on the SiN, and performing open-hole photoetching and dry etching on the wafer by inclining 45 degrees relative to the bottom edge to form a series of rectangular holes penetrating through the SiN mask for selective corrosion;
2) immersing the silicon wafer 1 with the mask layer into TMAH solution with the mass fraction of 25% at the temperature of 80 ℃ for about 7 hours to generate a strip-shaped corrosion groove, wherein the side wall and the bottom of the corrosion groove form an included angle of 45 degrees;
3) the silicon wafer 1 obtained by the etching is cut along the dicing lines shown in fig. 2 into a plurality of long mirror precursors 12;
4) in the assembling method shown in fig. 3, the bottom surfaces 4 and the larger cut surfaces (second cut surfaces 7) of the plurality of mirror precursors 12 are held in the holding openings of the holding jig 10 shown in fig. 3, and at this time, the inclined surfaces 2 of the plurality of mirror precursors 12 are naturally arranged to form a polishing plane 11;
5) repeatedly polishing along the polishing plane 11 by using a CMP method with a polishing parameter of 30rpm until the roughness of the inclined surfaces 2 of the plurality of mirror precursors 12 is reduced to less than 10 nm;
6) taking down the polished reflector precursor 12 in the previous step, and cutting the polished reflector precursor into independent 45-degree silicon-based reflectors with required lengths after being placed;
7) and cleaning the 45-degree silicon-based reflecting mirror to obtain a finished product.
Example 2
This example provides a method for manufacturing a 45 ° silicon-based mirror, which is substantially the same as example 1 except that:
6 inches of silicon wafer is selected; forming a photoresist layer with the surface of 2 mu m as a mask;
the corrosive liquid is 40% TMAH solution by mass, and the corrosion time is about 5 h;
the polishing speed was 100 rpm.
Example 3
This example provides a method for manufacturing a 45 ° silicon-based mirror, which is substantially the same as example 1 except that:
6 inches of silicon wafer is selected; forming a photoresist layer with the surface of 4 mu m as a mask;
the corrosive liquid is TMAH solution with the mass fraction of 10%, and the corrosion time is about 10 h;
the polishing speed was 60 rpm.
Example 4
This example provides a method for manufacturing a 45 ° silicon-based mirror, which is substantially the same as example 1 except that:
2-inch silicon wafers are selected; forming a 50nm SiN layer on the surface as a mask;
the corrosion solution is 40% of potassium hydroxide solution by mass, and the corrosion time is about 5 hours;
the polishing speed was 100 rpm.
It should be understood that the above-mentioned embodiments are merely illustrative of the technical concepts and features of the present invention, which are intended to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and therefore, the protection scope of the present invention is not limited thereby. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (10)
1. A method of making a 45 ° silicon based mirror comprising:
1) the surface of a silicon wafer with a 100 crystal face is directionally corroded along the 110 direction to generate an inclined plane and directionally corroded along the 100 direction to generate a parallel plane, and a reflector aggregate is obtained;
2) cutting and separating the reflector assembly to obtain a reflector precursor;
3) polishing the roughness grade of the inclined surface in the reflector precursor to a mirror surface grade;
and 4) cutting and separating the polished reflector precursor to obtain the 45-degree silicon-based reflector.
2. The manufacturing method according to claim 1, wherein the step 1) specifically comprises:
pre-plating a 50-200nm SiN layer on the silicon wafer, covering the SiN layer with photoresist with the thickness of 2-4um as a mask, and forming a plurality of rectangular openings which are parallel to each other and have 45-degree bevel edges;
etching the silicon wafer from the opening by using an etching solution;
preferably, the etching solution comprises an alkaline etching solution;
preferably, the solute in the corrosive liquid comprises one or a combination of more than two of TMAH, potassium hydroxide and sodium hydroxide;
preferably, the mass fraction of TMAH in the etching solution is 10-40%.
3. The method of claim 2, wherein the solute of the corrosive liquid further comprises a surfactant;
preferably, the surfactant comprises any one or two of triton and tert-butyl alcohol.
4. The manufacturing method of claim 2, wherein the reaction temperature of the directional etching is 70-90 ℃ and the reaction time is 5-10 h.
5. The manufacturing method according to claim 1, wherein the step 3) specifically comprises:
performing first cutting along the intersection line of the inclined plane and the parallel plane and perpendicular to the silicon wafer to generate a first cutting plane;
performing second cutting along the middle line of two adjacent inclined surfaces and perpendicular to the silicon wafer to generate a second cutting surface;
and taking the strip-shaped structure between the adjacent first cut surface and the second cut surface as the reflector precursor.
6. The manufacturing method according to claim 5, wherein the step 3) specifically comprises:
fixing a plurality of the reflector precursors in a clamping tool, and enabling inclined surfaces of the reflector precursors to be positioned in the same polishing plane;
and thinning and polishing the polishing plane to a plurality of roughness grades of the inclined planes are mirror surface grades.
7. The method of claim 6, wherein the holder comprises an elongated holder opening, the holder opening comprises a first holder surface and a second holder surface perpendicular to each other, the first holder surface matches with the second cut surface, and the second holder surface matches with the bottom surface of the reflector precursor;
preferably, the first clamping surface and the second cutting surface as well as the second clamping surface and the bottom surface are fixed by wax bonding.
8. The manufacturing method according to claim 6, wherein the polishing manner of the thinning polishing is CMP polishing, the polishing medium in the polishing paste comprises cerium oxide, and the polishing speed is 30-100 rpm;
after the thinning and polishing, the roughness of the inclined surface of the reflector precursor is less than 10 nm.
9. The manufacturing method according to claim 5, wherein the step 4) specifically comprises:
cutting along the length direction of the polished long strip-shaped reflector precursor at preset intervals to obtain a plurality of 45-degree silicon-based reflectors;
preferably, the preset distance is equal to the distance between the first cutting surface and the second cutting surface.
10. A 45 ° silicon based mirror fabricated by the method of any one of claims 1 to 9 wherein the 45 ° silicon based mirror comprises an inclined surface having an angle of 45 ° with respect to a bottom surface thereof, the inclined surface having a roughness grade of a specular grade.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210237801.4A CN114594540B (en) | 2022-03-11 | 2022-03-11 | 45-degree silicon-based reflector and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210237801.4A CN114594540B (en) | 2022-03-11 | 2022-03-11 | 45-degree silicon-based reflector and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114594540A true CN114594540A (en) | 2022-06-07 |
| CN114594540B CN114594540B (en) | 2024-03-22 |
Family
ID=81817895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210237801.4A Active CN114594540B (en) | 2022-03-11 | 2022-03-11 | 45-degree silicon-based reflector and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114594540B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1345264A (en) * | 1999-03-30 | 2002-04-17 | 株式会社尼康 | Polishing body, polisher, plishing method and method for producing semiconductor device |
| JP2009229809A (en) * | 2008-03-24 | 2009-10-08 | Victor Co Of Japan Ltd | Mirror, method for manufacturing mirror, and optical pickup device using mirror |
| US20110222179A1 (en) * | 2010-03-11 | 2011-09-15 | Pacific Biosciences Of California, Inc. | Micromirror arrays having self aligned features |
| CN102285636A (en) * | 2011-08-03 | 2011-12-21 | 中国人民解放军国防科学技术大学 | Wet etching preparation processes for polygonal section silicon beam |
| CN109387893A (en) * | 2017-08-11 | 2019-02-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | The manufacturing method of micro-reflector |
-
2022
- 2022-03-11 CN CN202210237801.4A patent/CN114594540B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1345264A (en) * | 1999-03-30 | 2002-04-17 | 株式会社尼康 | Polishing body, polisher, plishing method and method for producing semiconductor device |
| JP2009229809A (en) * | 2008-03-24 | 2009-10-08 | Victor Co Of Japan Ltd | Mirror, method for manufacturing mirror, and optical pickup device using mirror |
| US20110222179A1 (en) * | 2010-03-11 | 2011-09-15 | Pacific Biosciences Of California, Inc. | Micromirror arrays having self aligned features |
| CN102285636A (en) * | 2011-08-03 | 2011-12-21 | 中国人民解放军国防科学技术大学 | Wet etching preparation processes for polygonal section silicon beam |
| CN109387893A (en) * | 2017-08-11 | 2019-02-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | The manufacturing method of micro-reflector |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114594540B (en) | 2024-03-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2356675B1 (en) | Three dimensional thin film solar cell and manufacturing method thereof | |
| US7169669B2 (en) | Method of making thin silicon sheets for solar cells | |
| CN103114323B (en) | A kind of surface polishing method for GaN single crystalline substrate | |
| GB2101045A (en) | Method of etching optically flat facets in ingaasp/ inp heterostructures | |
| JPH05259016A (en) | Manufacture of wafer forming substrate and semiconductor wafer | |
| KR20000006261A (en) | Functional device and a method for manufacturing thereof and a optical disc apparatus using the functional device | |
| KR20010075093A (en) | Method for producing bonded wafer and bonded wafer | |
| KR20060101528A (en) | Method for production of semiconductor chip and semiconductor chip | |
| CN109149047A (en) | A kind of preparation method of the ultra-fine rib waveguide of on piece low-loss | |
| JP2006073832A (en) | Solar battery and method of manufacturing the same | |
| CN109387893B (en) | Method for manufacturing micro-reflector | |
| CN114594540A (en) | 45-degree silicon-based reflector and manufacturing method thereof | |
| CN101290362B (en) | Silicon wet method corrosion for manufacturing multiple stage micro-reflector | |
| US20110062111A1 (en) | Method of fabricating microscale optical structures | |
| CN110605794B (en) | Battery piece production method, battery piece and battery assembly | |
| JPH0519978B2 (en) | ||
| JPH05293965A (en) | Three-dimensional silicon structure | |
| Hylton | Light coupling and light trapping in alkaline etched multicrystalline silicon wafers for solar cells | |
| CN109216505A (en) | The preparation method for having the crystal-silicon solar cell of polysilicon passivating film | |
| CN116661036A (en) | 45-degree silicon reflecting mirror and manufacturing method thereof | |
| CA1073998A (en) | Double heterostructure laser for direct coupling to an optical fibre | |
| US9151664B2 (en) | Submount for optoelectronic, optical, or photonic components | |
| JP2000068171A (en) | Semiconductor wafer and its manufacture | |
| JPH0141268B2 (en) | ||
| CN117310858A (en) | Design and manufacturing method of 45-degree silicon reflecting mirror |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |