CN114556601A - 热电转换装置、热电转换装置的控制方法、使用热电转换装置冷却和/或加热对象物的方法及电子装置 - Google Patents

热电转换装置、热电转换装置的控制方法、使用热电转换装置冷却和/或加热对象物的方法及电子装置 Download PDF

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CN114556601A
CN114556601A CN202080071284.7A CN202080071284A CN114556601A CN 114556601 A CN114556601 A CN 114556601A CN 202080071284 A CN202080071284 A CN 202080071284A CN 114556601 A CN114556601 A CN 114556601A
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China
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thermoelectric conversion
electrode
region
conversion device
voltage
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Chinese (zh)
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藤金正树
高桥宏平
反保尚基
中村邦彦
内藤康幸
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/28—Arrangements for cooling comprising Peltier coolers
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
    • H02N11/002—Generators
    • H02N11/004—Generators adapted for producing a desired non-sinusoidal waveform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/82—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
    • H10N19/101—Multiple thermocouples connected in a cascade arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Thin Film Transistor (AREA)
CN202080071284.7A 2019-10-25 2020-10-06 热电转换装置、热电转换装置的控制方法、使用热电转换装置冷却和/或加热对象物的方法及电子装置 Pending CN114556601A (zh)

Applications Claiming Priority (3)

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JP2019-194772 2019-10-25
JP2019194772 2019-10-25
PCT/JP2020/037791 WO2021079733A1 (ja) 2019-10-25 2020-10-06 熱電変換装置、熱電変換装置の制御方法、熱電変換装置を用いて対象物を冷却及び／又は加熱する方法及び電子デバイス

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CN114556601A true CN114556601A (zh) 2022-05-27

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US (1) US12167692B2 (https=)
EP (1) EP4050670A4 (https=)
JP (1) JP7656867B2 (https=)
CN (1) CN114556601A (https=)
WO (1) WO2021079733A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3933945A4 (en) * 2019-02-28 2022-05-18 Panasonic Intellectual Property Management Co., Ltd. THERMOELECTRIC CONVERSION ELEMENT AND THERMOELECTRIC CONVERSION DEVICE
JP2022102827A (ja) * 2020-12-25 2022-07-07 パナソニックＩｐマネジメント株式会社 赤外線センサ

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JPH0758416A (ja) * 1993-08-09 1995-03-03 Miyazaki Densen Kogyo Kk レーザーダイオード冷却装置
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US20130019918A1 (en) * 2011-07-18 2013-01-24 The Regents Of The University Of Michigan Thermoelectric devices, systems and methods
US8508370B1 (en) * 2009-02-27 2013-08-13 Sandia Corporation Synthetic thermoelectric materials comprising phononic crystals
US20130255738A1 (en) * 2011-10-20 2013-10-03 California Institute Of Technology Phononic structures and related devices and methods
US20140373888A1 (en) * 2012-01-17 2014-12-25 Silicium Energy, Inc. Systems and methods for forming thermoelectric devices
US20160155923A1 (en) * 2014-12-02 2016-06-02 Stmicroelectronics (Crolles 2) Sas Thermo-electric generator
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US4443650A (en) * 1981-04-17 1984-04-17 Kyoto University Thermoelectric converter element
JPH0758416A (ja) * 1993-08-09 1995-03-03 Miyazaki Densen Kogyo Kk レーザーダイオード冷却装置
JP2003179204A (ja) * 2001-12-12 2003-06-27 Yaskawa Electric Corp 冷却機構付きパワーモジュールのその冷却方法
US20060021646A1 (en) * 2004-03-01 2006-02-02 Matsushita Electric Industrial Co., Ltd. Thermoelectric conversion device, and cooling method and power generating method using the device
JP2007115812A (ja) * 2005-10-19 2007-05-10 Seiko Epson Corp ペルチェモジュール及び電子機器
US8508370B1 (en) * 2009-02-27 2013-08-13 Sandia Corporation Synthetic thermoelectric materials comprising phononic crystals
US20130019918A1 (en) * 2011-07-18 2013-01-24 The Regents Of The University Of Michigan Thermoelectric devices, systems and methods
US20130255738A1 (en) * 2011-10-20 2013-10-03 California Institute Of Technology Phononic structures and related devices and methods
US20140373888A1 (en) * 2012-01-17 2014-12-25 Silicium Energy, Inc. Systems and methods for forming thermoelectric devices
US20160155923A1 (en) * 2014-12-02 2016-06-02 Stmicroelectronics (Crolles 2) Sas Thermo-electric generator
CN108701749A (zh) * 2016-02-24 2018-10-23 三菱综合材料株式会社 镁系热电转换材料的制造方法、镁系热电转换元件的制造方法、镁系热电转换材料、镁系热电转换元件及热电转换装置
JP2019012829A (ja) * 2017-06-29 2019-01-24 三菱マテリアル株式会社 熱電変換モジュール、及び、熱電変換モジュールの製造方法
CN110006536A (zh) * 2017-12-11 2019-07-12 松下知识产权经营株式会社 红外线传感器及其辐射热测量计红外线受光部的冷却方法

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JPWO2021079733A1 (https=) 2021-04-29
EP4050670A1 (en) 2022-08-31
WO2021079733A1 (ja) 2021-04-29
US20220216388A1 (en) 2022-07-07
US12167692B2 (en) 2024-12-10
JP7656867B2 (ja) 2025-04-04
EP4050670A4 (en) 2022-12-21

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