CN114540769A - Integrated form coating by vaporization system and polybase plate coating by vaporization device - Google Patents
Integrated form coating by vaporization system and polybase plate coating by vaporization device Download PDFInfo
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- CN114540769A CN114540769A CN202210050264.2A CN202210050264A CN114540769A CN 114540769 A CN114540769 A CN 114540769A CN 202210050264 A CN202210050264 A CN 202210050264A CN 114540769 A CN114540769 A CN 114540769A
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- 239000011248 coating agent Substances 0.000 title description 6
- 238000000576 coating method Methods 0.000 title description 6
- 238000009834 vaporization Methods 0.000 title description 6
- 230000008016 vaporization Effects 0.000 title description 6
- 238000001704 evaporation Methods 0.000 claims abstract description 121
- 230000008020 evaporation Effects 0.000 claims abstract description 120
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 230000005540 biological transmission Effects 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 18
- 238000004806 packaging method and process Methods 0.000 claims abstract description 5
- 238000005192 partition Methods 0.000 claims description 26
- 238000012546 transfer Methods 0.000 claims description 16
- 238000007789 sealing Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 10
- 238000001179 sorption measurement Methods 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 230000033001 locomotion Effects 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000011553 magnetic fluid Substances 0.000 claims description 3
- 238000001883 metal evaporation Methods 0.000 claims description 3
- 238000012858 packaging process Methods 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 25
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses an integrated evaporation system and a multi-substrate evaporation device, and relates to the technical field of OLED evaporation, wherein the integrated evaporation system comprises a substrate, a substrate loading cavity, a mask plate buffer cavity, an alignment cavity, a JIG buffer cavity, an organic cavity #1, an organic cavity #2, a metal cavity, a buffer cavity, a transmission cavity and a packaging section; the organic cavity or the metal cavity can be simultaneously provided with a plurality of substrates, different materials can be simultaneously evaporated on each substrate, the organic cavity selects an applicable linear evaporation source, the substrates and the mask plate are precisely attached to the alignment cavity, and the substrates and the mask plate are integrally transmitted to the organic cavity or the metal cavity to start evaporation; the invention adopts an integrated evaporation system, and the whole floor area is greatly reduced; on the premise of ensuring the uniformity of evaporation of the same material, the utilization rate of the material is greatly improved; meanwhile, different materials are simultaneously evaporated on the multiple substrates, so that the takt time in the mass production process is greatly saved, and online continuous evaporation can be realized.
Description
Technical Field
The invention relates to the technical field of OLED evaporation, in particular to an integrated evaporation system and a multi-substrate evaporation device.
Background
Organic Light-Emitting diodes (OLEDs) have excellent properties such as self-luminescence, ultra-thinness, fast response speed, wide viewing angle, low power consumption, etc., so that OLED display panels have become the focus and focus of current research. The preparation of the organic light emitting layer in the OLED display usually adopts a vacuum evaporation technique, i.e. in a vacuum chamber, an evaporation material in a crucible is heated to evaporate and deposit the evaporation material on a target substrate;
the existing evaporation system for mass production of OLED high resolution is generally a cluster type system and a single substrate evaporation device, and materials are evaporated on a substrate mainly through an evaporation source, so that a thin film device is formed and a device is finally produced. A general process cavity only comprises one evaporation substrate, and both an organic evaporation source and a metal evaporation source which are universal for 8-inch silicon substrates and 12-inch silicon substrates are point-type evaporation sources, so that the material interest rate is low, and the system is huge.
Disclosure of Invention
In order to solve the problems existing in the scheme, the invention provides an integrated evaporation system and a multi-substrate evaporation device, wherein a common organic cavity or metal cavity can be simultaneously placed with a plurality of substrates, and different materials can be simultaneously evaporated on each substrate, an applicable linear evaporation source is selected for the organic cavity, the substrates and the masks are precisely attached to each other in an alignment cavity, the substrates and the masks are integrally transmitted to the organic cavity or the metal cavity to start evaporation, the utilization rate of the materials can be generally improved by 2 times, the takt time in the mass production process can be improved by 20% approximately, the system is an integrated system, and the integral occupied area is greatly reduced.
The purpose of the invention can be realized by the following technical scheme:
an integrated evaporation system is suitable for 8-inch or 12-inch silicon-based substrates; the mask plate buffer cavity is arranged in the substrate loading cavity;
the substrate is stored in the substrate loading cavity, the mask plate is stored in the mask plate buffer cavity, and the transmission unit in the transmission cavity is used for transmitting the substrate and the mask plate to the alignment cavity; the precise bonding of the substrate and the mask plate is realized in the alignment cavity;
aligning and attaching the substrate and the mask plate; the substrate is attached to the adsorption structure to form a JIG unit integrally; the transmission unit in the transmission cavity transmits the JIG unit to a transmission station in the organic cavity # 1, and the transmission station is used for placing the JIG unit on the station No. 1;
a multi-substrate evaporation device is arranged in the organic cavity # 1, the JIG unit placed at the station No. 1 rotates to pass back to the transmission station after evaporation of all film layers is completed in the organic cavity # 1, the JIG unit placed at the station No. 1 is transmitted to the alignment cavity by the transmission unit of the transmission cavity, the mask plate is separated from the substrate in the alignment cavity, the separated mask plate is transmitted to the mask plate buffer cavity by the transmission unit of the transmission cavity, a new mask plate is transmitted to the alignment cavity by the transmission unit of the transmission cavity, alignment lamination is started, after lamination is completed, the new JIG unit is transmitted to the organic cavity #2, and the evaporation process of all the film layers is repeated;
after the JIG unit placed at the station No. 1 finishes the evaporation of each film layer in the organic cavity #2, the mask plate is replaced in the alignment cavity, and at the moment, the mask plate is subjected to metal evaporation; the new JIG unit is transmitted to the metal cavity, and evaporation of each film layer is completed at each station;
the JIG unit that No. 1 station was placed accomplishes the coating by vaporization back in the metal chamber, carries out the separation of base plate and mask plate in the counterpoint chamber to transmit the mask plate to mask plate cushion chamber, transmit the base plate to cushion chamber, the base plate is transmitted to the encapsulation section from cushion chamber and is capsulated, thereby accomplishes holistic coating by vaporization packaging process, forms the device.
Furthermore, the evaporation source III selected by the metal cavity is of a point type evaporation source structure.
Furthermore, the multi-substrate evaporation device comprises a lifting structure, a driving device, a sealing structure, an upper supporting structure, a moving shaft, a lower supporting structure, an upper station clapboard, a supporting plate structure and an upper station clapboard;
the driving device is of an integrated motor structure and is used for driving the motion shaft, the lower support structure, the upper station clapboard, the supporting plate structure and the JIG unit to integrally rotate; the sealing structure is a magnetic fluid sealing structure and is used for realizing vacuum sealing in the rotating process of the moving shaft.
Further, the multi-substrate vapor deposition device includes the following vapor deposition steps:
the method comprises the following steps: after the JIG unit is placed at the No. 1 station, the lifting structure is connected with the upper support structure, the movement shaft, the lower support structure, the upper station clapboard, the supporting plate structure and the JIG unit to integrally move downwards through downward movement until the lower station clapboard and the upper station clapboard are in a combined state;
step two: heating a first evaporation source corresponding to the station No. 1, opening a cover plate at the first evaporation source, starting evaporation of a first layer of material at the station No. 1, closing the cover plate at the first evaporation source after evaporation is finished, and moving upwards through a lifting structure to separate a lower station partition plate from an upper station partition plate; then, rotating the station No. 3 in the organic cavity # 1 to a transmission station, repeatedly transmitting the substrate and the mask plate to an alignment cavity, transmitting the JIG unit to the transmission station in the organic cavity # 1 after alignment and attachment, placing the JIG unit on the station No. 3 through the transmission station, and operating to a lower station partition plate and an upper station partition plate in a combined state through a lifting structure;
step three: and opening a cover plate at the first evaporation source, starting evaporation of a first layer of material at the No. 3 station, simultaneously heating a second evaporation source, opening two corresponding cover plates of the evaporation sources, starting evaporation of a second layer of material at the No. 1 station, closing the cover plate at the first evaporation source and the cover plate corresponding to the second evaporation source respectively after the evaporation is finished, and continuing the operation, so that evaporation of each film layer at the No. 1 station and evaporation of each film layer at the No. 3 station are realized.
Further, one or more stations and corresponding evaporation sources are arranged in the organic chamber # 1, and a main evaporation source and an auxiliary evaporation source are arranged at the same time in one station.
Further, the system includes a JIG buffer cavity that temporarily stores the JIG unit in the JIG buffer cavity when there is no storage location for the transmission cavity to transmit the JIG unit.
Compared with the prior art, the invention has the beneficial effects that:
the invention adopts an integrated evaporation system, and the integral occupied area is greatly reduced; the novel integrated evaporation system and the novel integrated evaporation device can greatly improve the utilization rate of materials on the premise of ensuring the evaporation uniformity of the same material; the evaporation device provides a plurality of substrates for simultaneously evaporating different materials, thereby greatly saving the takt time in the mass production process and realizing on-line continuous evaporation.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of an integrated evaporation system according to the present invention;
FIG. 2 is a schematic diagram of a station for organic chamber # 1 of the present invention;
FIG. 3 is a schematic diagram of a station of the present invention after rotation of organic chamber # 1;
FIG. 4 is a schematic structural view of an organic chamber # 1 evaporation device when a lower station partition plate and an upper station partition plate are separated according to the present invention;
FIG. 5 is a schematic structural view of an organic chamber # 1 evaporation device when a lower station separator and an upper station separator are combined in the present invention;
FIG. 6 is a schematic structural diagram of a metal chamber evaporation apparatus according to the present invention;
fig. 7 is an enlarged view of a portion a in fig. 4.
In the figure:
1001. a substrate loading chamber; 1002. a mask plate buffer cavity; 1003. aligning the cavity; 1004. a JIG buffer chamber; 1005. organic cavity # 1; 1006. organic chamber # 2; 1007. a metal cavity; 1008. a buffer chamber; 1009. a transfer chamber; 1010. a packaging section;
001. a transmission station; 5021. a first evaporation source; 5022. a second evaporation source; 5027. a main evaporation source; 5028. auxiliary evaporation source; 503. a lower station clapboard; 504. a station loading partition plate; 505. a lower support structure; 506. a JIG unit; 5061. station No. 1; 5063. a station No. 3; 507. an upper support structure; 508. a motion shaft; 509. a sealing structure; 510. a drive device; 511. a lifting structure; 512. a pallet structure; 513. a cover plate; 561. a mask plate; 562. a substrate; 563. an adsorption structure; 701. and a third evaporation source.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1-7, an integrated evaporation system is generally recommended for use with 8-inch or 12-inch silicon-based substrates 562, and other substrate sizes may be used, including substrate 562, substrate loading chamber 1001, mask buffer chamber 1002, and transfer chamber 1009;
the substrate 562 is stored in the substrate loading chamber 1001, the substrate 562 is generally a pretreated substrate 562, a pretreatment unit may also be integrated into the system, and during the operation of the system, the transfer unit in the transfer chamber 1009 is used to transfer the substrate 562 from the substrate loading chamber 1001 to the alignment chamber 1003; a mask 561 is stored in the mask buffer cavity 1002, and a transmission unit in the transmission cavity 1009 is used for transmitting the mask 561 to the alignment cavity 1003; the precise bonding of the substrate 562 and the mask plate 561 is realized in the alignment cavity 1003, the bonding precision is generally less than or equal to 5um, after the substrate 562 and the mask plate 561 are aligned and bonded, the substrate 562 and the adsorption structure 563 are bonded, an upward force action is formed on the mask plate 561, the sagging deformation of the mask plate 561 under the action of gravity is reduced, the adsorption structure 563 is a structure having an attraction effect on the mask plate 561, and can be a unit having a magnetic structure, a unit generating an electrostatic action, or other structures or units capable of forming an adsorption effect on the mask plate 561;
the substrate 562, the mask plate 561, and the adsorption structure 563 are integrally formed into a JIG unit 506, and a transfer unit in the transfer chamber 1009 transfers the JIG unit 506 to the organic chamber # 11005; and put on the transport station 001 in the organic chamber #11005 to realize the placement of the JIG unit 506 of the No. 1 station 5061 in the organic chamber # 11005;
a multi-substrate evaporation device is arranged in the organic cavity #11005, and comprises a lifting structure 511, a driving device 510, a sealing structure 509, an upper supporting structure 507, a moving shaft 508, a lower supporting structure 505, an upper station partition plate 504, a supporting plate structure 512 and an upper station partition plate 504 as shown in fig. 4; at this time, the lower station partition 503 and the upper station partition 504 are in a separated state, and the distance is b shown in fig. 4;
after the JIG unit 506 is placed at the position 5061 of the number 1, the lifting structure 511 moves downwards to connect the upper supporting structure 507, the moving shaft 508, the lower supporting structure 505, the upper station partition plate 504, the supporting plate structure 512 and the JIG unit 506 to move downwards integrally, and moves to the state shown in fig. 5, wherein the lower station partition plate 503 and the upper station partition plate 504 are in a combined state, the distance is b shown in fig. 5, the distance b is generally an extremely small value, approximately 0, or a negative value, and the lower station partition plate 503 and the upper station partition plate 504 are in a staggered state, so that the evaporation process is ensured, materials cannot be cross-polluted, and the independence of evaporation areas of each station is ensured;
the driving device 510 is generally an integrated motor structure and can drive the moving shaft 508, the lower supporting structure 505, the upper station partition 504, the pallet structure 512 and the JIG unit 506 to integrally rotate, the sealing structure 509 is preferably a magnetic fluid sealing structure to realize vacuum sealing in the rotating process of the moving shaft 508, and in the general working process, the inner side of the cavity is in a vacuum state, and the outer side of the cavity is in an atmospheric environment;
as shown in fig. 2, heating the first evaporation source 5021 corresponding to the No. 1 station 5061, opening the cover plate 513 at the first evaporation source 5021, starting the evaporation of the first layer of material at the No. 1 station 5061, after the evaporation is completed, closing the cover plate 513 at the first evaporation source 5021, and returning to the state where the lower station partition plate 503 and the upper station partition plate 504 are separated from each other by the lifting structure 511;
rotating the No. 3 station 5063 in the organic chamber #11005 to the transfer station 001, as shown in FIG. 3, rotating the No. 1 station 5061 to the position corresponding to the second evaporation source 5022 in FIG. 3, repeatedly transferring the substrate 562 and the mask 561 to the alignment chamber 1003, transferring the JIG unit 506 to the organic chamber #11005 after alignment and attachment, and placing the JIG unit 506 to the transfer station 001 in the organic chamber #11005, so as to realize the placement of the JIG unit 506 of the No. 3 station 5063 in the organic chamber #11005, and operating the lifting structure 511 to the state that the lower station partition 503 and the upper station partition 504 are combined or staggered as shown in FIG. 5;
opening a cover plate 513 at a first evaporation source 5021 position, starting evaporation of a first layer of material at a 5063 station No. 3, simultaneously heating a second evaporation source 5022, opening a cover plate 513 corresponding to the second evaporation source 5022, starting evaporation of a second layer of material at a 5061 station No. 1, after the evaporation is finished, respectively closing the cover plate 513 at the first evaporation source 5021 position and the cover plate 513 corresponding to the second evaporation source 5022, and continuing the operation, thereby realizing evaporation of each film layer at a 5061 station No. 1 and evaporation of each film layer at a 5063 station No. 3;
wherein, 6 or 8 stations and corresponding evaporation sources are arranged in the organic cavity #11005, and simultaneously, in order to realize co-evaporation, as shown in fig. 3, a main evaporation source 5027 and an auxiliary evaporation source 5028 are simultaneously arranged in one station, so as to realize simultaneous evaporation of two materials, the same three materials are also applicable, and the evaporation sources of the corresponding materials are added to the corresponding stations;
after evaporation of each film layer is completed in the organic cavity #11005, the JIG unit 506 placed in the station No. 1 5061 rotates back to the transmission station 001, the transmission unit of the transmission cavity 1009 transmits the JIG unit 506 placed in the station No. 1 5061 to the alignment cavity 1003, the mask plate 561 and the substrate 562 are separated in the alignment cavity 1003, the separated mask plate 561 is transmitted to the mask plate buffer cavity 1002 through the transmission unit of the transmission cavity 1009, the new mask plate 561 is transmitted to the alignment cavity 1003 through the transmission unit of the transmission cavity 1009, alignment bonding is started, after bonding is completed, the new JIG unit 506 is transmitted to the organic cavity #21006, and the evaporation process of each film layer is repeated; if the mask 561 does not need to be replaced, after the organic cavity #11005 finishes the evaporation of each film layer, the JIG unit 506 is directly transmitted to the organic cavity #21006, and the mask 561 does not need to be replaced in the alignment cavity 1003;
after the deposition of each film layer is completed in the organic cavity #21006, the JIG unit 506 placed in the station No. 1 5061 generally performs the replacement of the mask 561 in the alignment cavity 1003 as described above, where the mask 561 suitable for metal deposition generally needs to be selected, and transmits a new JIG unit 506 to the metal cavity 1007 to complete the deposition of each film layer in each station, where the evaporation source three 701 generally selected for the metal cavity 1007 is preferably a point-type evaporation source structure; as shown in fig. 6, fig. 6 only shows the position of the lower station partition 503 and the upper station partition 504 in the evaporation apparatus of the metal chamber 1007, and the position of the merging or interleaving state is similar to the position of the organic chamber #11005, refer to fig. 5;
after the metal cavity 1007 is evaporated, the JIG unit 506 placed at the station 5061 No. 1 is transferred to the alignment cavity 1003 to separate the substrate 562 from the mask 561, the mask 561 is transferred to the mask buffer cavity 1002, the substrate 562 is transferred to the buffer cavity 1008, and the substrate 562 is transferred from the buffer cavity 1008 to the packaging section 1010 for packaging, so that the whole evaporation packaging process is completed, and a device is formed.
The above is the evaporation process of the JIG unit 506 at the No. 1 station 5061, and the JIG unit 506 at other stations repeats the evaporation process of the JIG unit 506 at the No. 1 station 5061 to form a continuous process meeting the requirement of mass production;
in the transmission process of the JIG unit 506, in order to ensure the time requirement of the station beat and meet the continuous productivity of the mass production process, the JIG buffer cavity 1004 is arranged as shown in fig. 1, when the JIG unit 506 is transmitted by the transmission cavity 1009 and has a non-storage position, the JIG unit 506 is temporarily stored in the JIG buffer cavity 1004, if the JIG unit 506 completes evaporation in the organic cavity #21006, the mask plate 561 needs to be transmitted to the alignment cavity 1003 for replacement, at this time, the alignment cavity 1003 is processing the separation process of the substrate 562 and the mask plate 561 of the JIG unit 506 which completes evaporation from the metal cavity 1007, at this time, the JIG unit 506 which completes evaporation in the organic cavity #21006 can be firstly stored in the JIG buffer cavity 1004, thereby realizing the continuity of the whole production process.
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The preferred embodiments of the invention disclosed above are intended to be illustrative only. The preferred embodiments are not intended to be exhaustive or to limit the invention to the precise forms disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims (5)
1. An integrated evaporation system is suitable for 8-inch or 12-inch silicon-based substrates; the mask plate buffer device is characterized by comprising a substrate (562), a substrate loading cavity (1001), a mask plate buffer cavity (1002) and a transmission cavity (1009);
the substrate (562) is stored in the substrate loading cavity (1001), the mask plate (561) is stored in the mask plate buffer cavity (1002), and the transmission unit in the transmission cavity (1009) is used for transmitting the substrate (562) and the mask plate (561) to the alignment cavity (1003); the substrate (562) and the mask plate (561) are precisely jointed in the alignment cavity (1003);
the substrate (562) and the mask plate (561) are aligned and attached; a substrate (562) to which the adsorption structure (563) is bonded, and which integrally forms a JIG unit (506); a transfer unit within the transfer chamber (1009) transfers the JIG unit (506) to a transfer station (001) within the organic chamber #1(1005), the transfer station (001) for placing the JIG unit (506) onto a No. 1 station (5061);
a multi-substrate evaporation device is arranged in the organic cavity #1(1005), the JIG unit (506) placed at the station No. 1 (5061) rotates back to the transmission station (001) after evaporation of all film layers is completed in the organic cavity #1(1005), the transmission unit of the transmission chamber (1009) transmits the JIG unit (506) placed at the station No. 1 (5061) to the alignment chamber (1003), the mask plate (561) is separated from the substrate (562) in the alignment chamber (1003), the separated mask plate (561) is transmitted to the mask plate buffer chamber (1002) through the transmission unit of the transmission chamber (1009), a new mask plate (561) is transmitted to the alignment chamber (1003) through the transmission unit of the transmission chamber (1009), alignment bonding is started, after bonding is completed, the new JIG unit (506) is transmitted to the organic cavity #2(1006), and evaporation processes of all film layers are repeated;
after the JIG unit (506) placed at the No. 1 station (5061) finishes the evaporation of all film layers in the organic cavity #2(1006), the mask plate (561) is replaced in the alignment cavity (1003), and at the moment, the mask plate (561) is selected for metal evaporation; the new JIG unit (506) is transmitted to the metal cavity (1007), and the evaporation of each film layer is completed at each station;
after evaporation is completed in a metal cavity (1007), a JIG unit (506) placed at a No. 1 station (5061) is transmitted to an alignment cavity (1003) to separate a substrate (562) from a mask plate (561), the mask plate (561) is transmitted to a mask plate buffer cavity (1002), the substrate (562) is transmitted to a buffer cavity (1008), and the substrate (562) is transmitted to a packaging section (1010) from the buffer cavity (1008) to be packaged, so that the whole evaporation packaging process is completed, and a device is formed.
2. The integrated evaporation system according to claim 1, wherein the evaporation source III (701) selected by the metal chamber (1007) is a point-type evaporation source structure.
3. An integrated evaporation system according to claim 1, wherein 6 or 8 stations and corresponding evaporation sources are arranged in the organic chamber #1(1005), and a primary evaporation source (5027) and a secondary evaporation source (5028) are arranged at the same time at one station.
4. An integrated evaporation system according to claim 1, further comprising a JIG buffer chamber (1004), wherein the JIG unit (506) is temporarily stored in the JIG buffer chamber (1004) when there is a no-storage position for the JIG unit (506) in the transfer chamber (1009).
5. The multi-substrate evaporation device is characterized by comprising a lifting structure (511), a driving device (510), a sealing structure (509), an upper supporting structure (507), a moving shaft (508), a lower supporting structure (505), an upper station partition plate (504), a supporting plate structure (512) and an upper station partition plate (504);
the driving device (510) is of an integrated motor structure and is used for driving the motion shaft (508), the lower support structure (505), the upper station partition plate (504), the supporting plate structure (512) and the JIG unit (506) to integrally rotate; the sealing structure (509) is a magnetic fluid sealing structure and is used for realizing vacuum sealing in the rotating process of the moving shaft (508).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210050264.2A CN114540769A (en) | 2022-01-17 | 2022-01-17 | Integrated form coating by vaporization system and polybase plate coating by vaporization device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210050264.2A CN114540769A (en) | 2022-01-17 | 2022-01-17 | Integrated form coating by vaporization system and polybase plate coating by vaporization device |
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