JP2019218581A - Sputtering apparatus and sputtering method - Google Patents

Abstract

To prevent the occurrence of heat damage in a base.SOLUTION: A sputtering apparatus 100 comprises: a target 10 provided to face a surface forming the surface to be deposited of a base S; a magnetic circuit 12 capable of forming an erosion portion in the target during sputtering; and a tabular mask 15 having an opening 15a arranged in the vicinity of a region to be deposited in the base to specify the region to be deposited and covering the entire circumference of the region to be deposited. In the opening of the mask, cooling means 18 extended in four directions forming the traveling direction of the base and a width direction orthogonal to the traveling direction to reduce radiant heat from the mask to the base is arranged on a surface on the base side so as to surround the opening.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a sputtering apparatus and a sputtering method, and particularly to a technique suitable for continuously performing various vacuum processes such as sputtering on a sheet-like substrate wound around a roller formed into a drum in a vacuum atmosphere. About.

  For example, a resin-made sheet-shaped substrate (film) has flexibility and good workability. Therefore, a predetermined thin film such as a predetermined metal film or an oxide film is formed on one surface thereof in a vacuum atmosphere. It is known that an electronic component or an optical component is formed by forming a single or multilayer film, or by performing etching or heat treatment.

  Patent Document 1 discloses, for example, a sheet-like substrate capable of continuously performing various vacuum treatments on one surface of a sheet-like substrate. In this technique, a vacuum chamber capable of forming a vacuum atmosphere is provided, which accommodates a drum-shaped roller around which a sheet-shaped substrate is wound. In the vacuum chamber, a plurality of partitions are fixedly arranged to partition a plurality of processing spaces separated from each other around a roller which is usually in the form of a drum, for example, so-called gas contamination during vacuum processing. The occurrence is suppressed as much as possible.

  In recent years, in order to improve productivity, there is a demand for performing high-speed sputtering film formation in which film formation is performed with the scanning speed (moving speed) of the film increased.

JP 2013-194253 A

  However, when sputter deposition is performed on a film scanned at a high speed, a state called heat loss may occur, such as wrinkling of the film wound around a roller in the form of a drum. There was a possibility that uniform film formation could not be realized.

  In particular, in the case of sputtering film formation, heat load increases due to heat radiation accompanying plasma generation, and a resinous film or the like is easily deformed. There was a problem that a film could not be formed.

  At the same time, in order to perform sputter deposition on a film scanned at a high speed, the deposition rate, that is, the deposition rate must be correspondingly increased, but there is a known means capable of performing this without generating heat loss. Did not.

The present invention has been made in view of the above circumstances, and aims to achieve the following objects.
1. To realize film formation while preventing the occurrence of heat loss in the film.
2. Improve the film forming speed.
3. To enable sputter deposition on high-speed films.

  The present inventors have analyzed the occurrence of heat loss in sputter deposition as follows.

0. Analysis of heat loss Heat loss means that the film is deformed such as wrinkles due to an increase in the temperature of the film during film formation, and sputter film formation is performed in a state where the film formation surface is not flat. The film flatness is reduced, and this causes production hindrance in the post-process, and when the heat-defeated film is wound up after film formation, it is formed when the uneven portions such as wrinkles overlap. It is not preferable because the quality of the film cannot be maintained by damaging the film.
In particular, so-called tin wrinkles, which occur as a plurality of strips in a galvanized sheet (corrugated plate) shape in the circumferential direction of a drum-shaped roller, tend to have a large area of occurrence, and also have a tendency in the tensile direction of the film. It is not preferable because it occurs and it is difficult to correct it.

1. Heat Radiation from Target First, in a sputtering film forming process performed on a film wound around a rotating drum-shaped roller, plasma is generated from the target during film formation. At this time, the temperature of the target rises due to the generation of plasma.However, due to the heat radiation radiated from the high-temperature target and directly reaching the film, the temperature of the film rises and is deformed, and the heat is lost. It may be a cause of this.

2. Similarly, in the case of sputtering film formation on a film wound around a rotating drum-shaped roller, plasma is generated from the vicinity of a target during film formation. At this time, since the generated plasma has a high temperature, the temperature of the film rises and is deformed by heat radiation radiated from the high-temperature plasma and directly reaches the film, which causes heat loss and causes deformation such as wrinkles. It is conceivable that it occurs as heat damage.

  Further, the radiant heat radiated from the high-temperature plasma reaches members such as a mask that regulates a film formation range located between the high-temperature plasma and the members, and these members increase in temperature. It is conceivable that the temperature of the film rises and is deformed by the heat radiation radiated from the member such as the high-temperature mask and directly reaches the film, which causes heat loss, and deformation such as wrinkles may occur as thermal damage. .

3. Thermal radiation from free electrons Although plasma is electrically neutral as a whole, it is actually generated as a state in which positive ions and negative ions are disturbed. On the other hand, since sputter deposition is performed while the film has a certain level of potential, some charged particles, such as free electrons or positive and negative ions, directly enter the film from the plasma. That happens. As a result, it is considered that the film generates heat, the temperature of the film rises, and the film is deformed and loses heat, and deformation such as wrinkles is generated on the film as thermal damage.

4. Condensation latent heat For example, when a target made of copper (Cu) or the like is used, the film-forming particles are vaporized once and adhere to a film to form a film. Since the film-forming particles have heat of vaporization during the vaporization, when the film-forming particles are formed on the film, the film-forming particles are cooled to generate latent heat of aggregation. Since this latent heat is generated on the film, the latent heat generated from the film-forming particles is directly transmitted to the film, and the temperature of the film rises and deforms, causing the film to lose its heat. It is expected that this will occur.

5. Temperature difference between the front and back of the film A roller formed into a drum around which a film is wound around the outer periphery is sometimes supplied with a cooling medium at the inside thereof to form a sputter film in a state where a rise in the film temperature is prevented. In this case, a temperature gradient, that is, a temperature difference occurs in the film thickness direction between the film deposition surface of the film and the surface in contact with the drum-shaped roller. It is considered that this temperature difference becomes a thermal load, the film loses heat, and the resulting deformation such as wrinkles is generated on the film as thermal damage.

6. Adhesion between Drum-shaped Roller and Film Although conventionally known, it is considered that deformation such as wrinkles also occurs in the film as thermal damage depending on the state of adhesion between the roller surface and the film.

  Of course, these causes are considered to be caused by heat loss either alone or as a combination of two or more. In addition, the degree of contribution (weight) of each cause also changes depending on conditions such as film formation type, film material, film thickness, film scanning speed, plasma state, film formation condition, apparatus state, apparatus configuration, and the like. It is conceivable that the degree of contribution of each cause to the occurrence of heat loss also changes during the same film forming process, and a measure for preventing the occurrence of heat loss is not simple.

  The present inventors found that among the causes of heat loss analyzed as described above, in particular, 2. Attention was paid to heat radiation from plasma, and an attempt was made to solve this, and the present invention was reached as follows.

The sputtering device of the present invention is a sputtering device of the present invention is a sputtering device that forms a film on a flexible substrate that moves in the longitudinal direction,
A target provided so as to face one surface of the substrate on which a film is formed;
A magnetic circuit capable of forming an erosion portion on the target during sputtering,
A plate-shaped mask that is disposed near the film-forming region on the base and has an opening that defines the film-forming region and covers the entire periphery of the film-forming region;
Has,
In the mask, the opening is provided with a cooling unit that extends in four directions that are a width direction orthogonal to the direction of travel of the substrate and a direction perpendicular to the direction of travel and reduces radiant heat from the mask to the substrate. The above problem was solved by arranging the mask on the substrate side so as to surround the mask, and cooling the mask, which rises in temperature when plasma is generated, by the cooling means.
In the present invention, a plate-shaped anode having an opening corresponding to the opening in the mask is provided between the mask and the target,
In the anode, the opening is provided with cooling means extending in four directions that are a width direction perpendicular to the direction of travel of the base and the direction of travel of the base to reduce radiant heat from the anode to the base. Is more preferably arranged on the surface on the side of the base so as to surround the substrate.
The target of the present invention is provided with a case having an opening disposed near the substrate side of the target and defining an advancing direction of film-forming particles to the film-forming region,
The case is provided with an opening corresponding to the opening in the mask,
In the case, the opening is provided with cooling means extending in four directions that are a width direction orthogonal to the direction of travel of the base and the direction of travel of the base to reduce radiant heat from the case to the base. Can be arranged on the surface on the base side so as to surround the substrate.
Further, in the present invention, the cooling means is a refrigerant pipe extending around the opening,
Means in which a refrigerant supply means for supplying a refrigerant to the refrigerant pipe may be provided.
Further, as means for moving the base in the longitudinal direction, the base is formed in a drum shape having a rotation axis in the width direction orthogonal to the advancing direction of the base, and is wound around the outer cylindrical surface of the drum in a stretched state. Having a main roller,
The main roller may be provided at its inner position with a temperature adjusting means for adjusting the temperature of the base during sputtering.
Further, the target may be a rotary target having a rotation axis in the width direction orthogonal to the traveling direction of the base, or a flat target having a swing direction substantially parallel to the width direction,
A cooling unit for cooling the target may be provided at a position of the target opposite to the base.
In the sputtering method of the present invention, a sputtering method for forming a film on a flexible substrate that moves in the longitudinal direction,
Along with supplying power to a target facing one surface forming a film-forming surface of the base, a magnetic circuit forms an erosion portion on the target to generate plasma,
By covering the periphery of the deposition region with a plate-shaped mask having an opening and disposed around the deposition region on the substrate in the vicinity of the deposition region, the deposition particles from the target reach the arrival region of the substrate. While defining the film formation region,
Cooling means disposed on the substrate-side surface of the mask so as to extend in four directions that are the width direction orthogonal to the traveling direction of the substrate and the traveling direction and surround the opening,
At the time of sputtering, radiant heat from the mask to the substrate can be reduced.
The cooling means may be a refrigerant pipe extending around the opening, and the refrigerant supply means may supply a refrigerant to the refrigerant pipe.

The sputtering apparatus of the present invention is a sputtering apparatus that forms a film on a flexible substrate that moves in the longitudinal direction,
A target provided so as to face one surface of the substrate on which a film is formed;
A magnetic circuit capable of forming an erosion portion on the target during sputtering,
A plate-shaped mask that is disposed near the film-forming region on the base and has an opening that defines the film-forming region and covers the entire periphery of the film-forming region;
Has,
In the mask, the opening is provided with a cooling unit that extends in four directions that are a width direction orthogonal to the direction of travel of the substrate and a direction perpendicular to the direction of travel and reduces radiant heat from the mask to the substrate. Is disposed on the surface on the substrate side so as to surround the substrate, the temperature of the mask, which rises in temperature when plasma is generated, is cooled by cooling means, thereby lowering the temperature of the surface of the mask facing the substrate side, and It is possible to reduce the heat load on the substrate by reducing the radiant heat to the film, and to reduce the occurrence of heat loss in the substrate (film) due to the heat load. In addition, the mask shields radiant heat from the plasma around the opening to the substrate (film), thereby reducing the amount of heat absorbed by the substrate and reducing the occurrence of heat loss in the substrate (film) due to a thermal load. Become. As a result, it is possible to improve the film formation speed and to perform sputter film formation on a film scanned at high speed.

In the present invention, a plate-shaped anode having an opening corresponding to the opening in the mask is provided between the mask and the target,
In the anode, the opening is provided with cooling means extending in four directions that are a width direction perpendicular to the direction of travel of the base and the direction of travel of the base to reduce radiant heat from the anode to the base. Is arranged on the surface on the side of the substrate so as to surround the substrate, the potential of the substrate (film) is adjusted to a predetermined state by the anode, and some charged particles such as free electrons or positive and negative ions are generated from the generated plasma. To prevent direct incidence on a substrate (film), reduce the temperature rise of the substrate (film), reduce the thermal load on the substrate, and reduce the occurrence of heat loss in the substrate (film) due to the thermal load. Becomes possible. At the same time, by cooling the anode, which rises in temperature when plasma is generated, by cooling means, the radiant heat from the anode to the substrate (film) is reduced to reduce the thermal load on the substrate, and the substrate (film) loses heat due to the thermal load. Can be reduced. As a result, it is possible to improve the film formation speed and to perform sputter film formation on a film scanned at high speed.

The target of the present invention is provided with a case having an opening disposed near the substrate side of the target and defining an advancing direction of film-forming particles to the film-forming region,
The case is provided with an opening corresponding to the opening in the mask,
In the case, the opening is provided with cooling means extending in four directions that are a width direction orthogonal to the direction of travel of the base and the direction of travel of the base to reduce radiant heat from the case to the base. Is disposed on the substrate-side surface so as to surround the target, the target that rises in temperature during plasma generation is covered by a case, so that radiant heat from the target and plasma to the substrate (film) is reduced, and the thermal load on the substrate is reduced. It is possible to reduce the occurrence of heat loss due to a heat load in the substrate (film). In addition, the radiation heat incident on the target from the plasma is reduced, and the case is cooled by the cooling means, so that the radiation heat from the case to the substrate (film) is reduced, thereby reducing the heat load on the substrate. In this case, it is possible to reduce the occurrence of heat loss due to the heat load. As a result, it is possible to improve the film formation speed and to perform sputter film formation on a film scanned at high speed.

Further, in the present invention, the cooling means is a refrigerant pipe extending around the opening,
By adopting a means in which a coolant supply means for supplying a coolant to the coolant pipe is provided, the periphery of each opening of the mask, the anode, and the case is cooled by flowing the coolant through the coolant pipe, and the substrate It is possible to reduce the heat load on the substrate by reducing the radiant heat to the (film) and reduce the occurrence of heat loss due to the heat load on the substrate (film) with a simple configuration. Further, by setting the coolant supply state, the respective temperature states of the mask, the anode, and the case can be appropriately set, and the sputter state on the base (film) can be set. As a result, it is possible to improve the film formation speed and to perform sputter film formation on a film scanned at high speed.

Further, as means for moving the base in the longitudinal direction, the base is formed in a drum shape having a rotation axis in the width direction orthogonal to the traveling direction of the base, and is wound around the outer cylindrical surface of the drum in a stretched state. Having a main roller,
The main roller is provided at its inner position with temperature control means for adjusting the temperature of the substrate during sputtering, and the temperature control means and the cooling means allow the front and back surfaces of the substrate (film), The temperature state of the substrate can be appropriately set from the film formation surface and the back side surface thereof, and the sputter state on the substrate (film) can be appropriately set, and the occurrence of heat loss due to a heat load on the substrate (film) can be reduced. It becomes possible. As a result, it is possible to improve the film formation speed and to perform sputter film formation on a film scanned at high speed.

Further, the target may be a rotary target having a rotation axis in the width direction orthogonal to the traveling direction of the base, or a flat target having a swing direction substantially parallel to the width direction,
Cooling means for cooling the target is provided at a position on the opposite side of the target from the target, so that the target which rises in temperature when plasma is generated is cooled by the cooling means, so that radiant heat from the target to the substrate (film) is provided. And the thermal load on the substrate is reduced, and the occurrence of heat loss due to the thermal load on the substrate (film) can be reduced. As a result, it is possible to improve the film formation speed and to perform sputter film formation on a film scanned at high speed.

In the sputtering method of the present invention, a sputtering method for forming a film on a flexible substrate that moves in the longitudinal direction,
Along with supplying power to a target facing one surface forming a film-forming surface of the base, a magnetic circuit forms an erosion portion on the target to generate plasma,
By covering the periphery of the film formation region with a plate-shaped mask having an opening and arranged on the entire periphery of the substrate in the vicinity of the film formation region, the film-forming particles from the target reach the arrival region of the substrate. While defining the film formation region,
Cooling means disposed on the substrate-side surface of the mask so as to extend in four directions that are the width direction orthogonal to the traveling direction of the substrate and the traveling direction and surround the opening,
At the time of sputtering, by reducing the radiant heat from the mask to the substrate, the temperature of the surface of the mask facing the substrate is reduced, and the radiant heat from the mask to the substrate (film) is reduced to reduce the heat load on the substrate. By lowering, it is possible to reduce the occurrence of heat loss due to a heat load in the substrate (film). In addition, the mask shields radiant heat from the plasma around the opening to the substrate (film), thereby reducing the thermal load on the substrate, and reducing the occurrence of heat loss in the substrate (film) due to the thermal load. Become. As a result, it is possible to improve the film formation speed and to perform sputter film formation on a film scanned at high speed.

  In addition, the cooling means is a refrigerant pipe extending around the opening, and the coolant supply means supplies the refrigerant to the refrigerant pipe, so that the temperature state in the mask can be appropriately set, and the base ( It is possible to suitably set the sputtering state of the film. As a result, it is possible to improve the film formation speed and to perform sputter film formation on a film scanned at high speed.

  Advantageous Effects of Invention According to the present invention, it is possible to prevent the occurrence of heat loss in a film, improve the film formation speed, and achieve the effect of enabling sputter film formation on a film scanned at high speed. It becomes.

FIG. 1 is a schematic sectional view showing a first embodiment of a sputtering apparatus according to the present invention. It is a perspective view showing a mask in a 1st embodiment of a sputtering device concerning the present invention. It is an explanatory view showing a first embodiment of a sputtering method according to the present invention. It is a schematic diagram which shows the example of the refrigerant pipe arrangement | positioning in the mask of 1st Embodiment of the sputtering apparatus which concerns on this invention. It is a schematic diagram which shows the example of the refrigerant pipe arrangement | positioning in the mask of 1st Embodiment of the sputtering apparatus which concerns on this invention. It is a schematic diagram which shows the example of the refrigerant pipe arrangement | positioning in the mask of 1st Embodiment of the sputtering apparatus which concerns on this invention. It is a schematic diagram which shows the example of the refrigerant pipe arrangement | positioning in the mask of 1st Embodiment of the sputtering apparatus which concerns on this invention. It is a schematic diagram which shows the example of the refrigerant pipe arrangement | positioning in the mask of 1st Embodiment of the sputtering apparatus which concerns on this invention. It is a schematic diagram which shows the example of the refrigerant pipe arrangement | positioning in the mask of 1st Embodiment of the sputtering apparatus which concerns on this invention. It is a schematic cross section showing a 2nd embodiment of the sputtering device concerning the present invention. It is a schematic sectional view showing a 3rd embodiment of the sputtering device concerning the present invention. FIG. 9 is an enlarged schematic cross-sectional view showing the vicinity of a mask of a third embodiment of the sputtering apparatus according to the present invention.

Hereinafter, a first embodiment of a sputtering apparatus and a sputtering method according to the present invention will be described with reference to the drawings.
FIG. 1 is a schematic sectional view showing a sputtering apparatus according to the present embodiment. In the figure, reference numeral 100 denotes a sputtering apparatus.

  As shown in FIG. 1, the sputtering apparatus 100 according to the present embodiment includes at least a metal film, an oxide film, a transparent conductive film, or the like on a flexible substrate (film) S that moves in a longitudinal direction. An unwinding chamber 101, a film forming chamber 103, and a winding chamber 104 are provided. However, in addition to these chambers, for example, a pretreatment chamber for performing a heat treatment or a surface treatment of the substrate S before film formation is provided before the film formation chamber 103, and a film is formed after the film formation chamber 103 is provided after the film formation chamber 103. Another chamber such as a post-processing chamber for cooling or post-heating the substrate S may be provided.

  When the flexible substrate (substrate) S in the present invention is made of, for example, a tape- or sheet-shaped flexible object to be processed, it may be a tape- or sheet-shaped flexible support. In the case of a combination with a flexible object to be disposed thereon (provided that the “flexible object” in this case is placed on the “flexible support”). And the shape and arrangement are not particularly limited).

  As shown in FIG. 1, the unwinding chamber 101 is provided with unwinding means 110 for the substrate S, the winding chamber 104 is provided with a winding means 112 for the substrate S, and the inside of the film forming chamber 103 is provided. In addition, a moving means 111 (main roller MR) for moving the substrate S is disposed, and a roller-shaped rotating body is suitably used for any of the means. The arrows shown in the unwinding means 110 and the moving means 111 (MR) indicate the rotation direction of each means, and the arrows shown along the base S indicate the moving direction of the base S.

  Note that a plurality of small-diameter guide rollers Gr are disposed between the unwinding means 110, the moving means 111 (MR), and the winding means 112, and the base S moves through each of the guide rollers. The flexible substrate S is configured to be transported in its longitudinal direction while maintaining a state in which an appropriate tension is applied to the flexible substrate S. The so-called substrate S is in a state where tension control (tension control) is performed by the unwinding means / winding means.

  The film forming chamber 103 is in communication with the unwinding chamber 101 and the winding chamber 104 so that the flexible substrate S can move. The film forming chamber 103 includes the film forming chamber 103, the unwinding chamber 101, Exhaust means P1 is provided to make each chamber of the winding chamber 104 a desired reduced pressure atmosphere (degree of vacuum).

In the film forming chamber 103, as shown in FIG. 1, the film forming means SP is arranged so as to face the substrate S supported by the moving means 111 (MR).
In the film forming chamber 103, as shown in FIG. 1, the film forming means SP is provided with an introduction means P2 for an argon gas and an oxygen gas used as a sputtering gas, and an exhaust means P3 for exhausting excess gas. Is provided.

  The moving means 111 (MR) is provided with a temperature control means capable of controlling the temperature of the moving means 111 (MR), and adjusts the temperature of the substrate S passing in front of the film forming means in accordance with the film forming conditions in the film forming means SP. It is possible to control. Specifically, the temperature control means includes a hot refrigerant supply means T1 for supplying a hot refrigerant such as cooling (heating) water into the main roller MR, and an outer periphery of the main roller MR connected to the hot refrigerant supply means T1. And a warm refrigerant passage 111a provided in the vicinity.

Hereinafter, a description will be given assuming that a film made of copper (Cu) is formed on the substrate S by sputtering in the film forming means SP.
Alternatively, a transparent conductive film made of ITO may be formed on the silicon oxide film in the film forming means SP by using a substrate in which a silicon oxide film functioning as a base layer is formed in advance on a film formation surface as the substrate S. it can. In this case, in addition to the configuration having one film forming unit as shown in FIG. 1, a plurality of other film forming units may be further provided. Other film forming means are used, for example, for forming a silicon oxide film functioning as a base film or a niobium oxide film.

  As shown in FIG. 1, the film forming means SP includes a cylindrical rotary target (target) 10, rotating means (not shown) for rotating the rotary target 10, and a magnetic circuit 12 provided inside the rotary target 10. , A shield member (case) 13.

  The shield member (case) 13 is arranged so as to surround the outer periphery of the rotary target 10 in order to prevent unnecessary deposition on the periphery, and an opening 13 a is provided at a position of the rotary target 10 facing the base S. This prevents the position of the rotary target 10 facing the substrate S from being sputtered.

  The shield member (case) 13 is provided with an exhaust port at a position facing the atmosphere during the sputtering process, and an exhaust port P3 is connected to the exhaust port. The exhaust means P3 is capable of exhausting the inside of the shield member (case) 13 and the inside of the film forming chamber 103 through the opening 13a. Note that the exhaust unit P3 is not limited to the opening 13a, and may be provided at another position in the film forming chamber 103.

The shield member (case) 13 is provided with a cryopump 13c at a position on the exhaust port side of the rotary target 10, and adsorbs unnecessary particles that increase the degree of vacuum in the shield member (case) 13.
At the same time, the cryopump 13c is arranged at a position on the exhaust port side of the rotary target 10, in particular, at a position where the rotary target 10 can be cooled at a position immediately before rotating to face the substrate S at the opening 13a.

The rotary target 10 is a base material made of copper on which a film is formed, and is a rectangular cylindrical member that forms an axial direction in the depth of the paper in FIG.
On the inner peripheral surface of the rotary target 10, a backing tube 11 for transmitting electric power from a plasma power supply 11a is arranged. A magnetic circuit 12 that functions to trap plasma on the surface of the rotary target 10 is disposed further inside the backing tube 11. The magnetic circuit 12 of the present invention is of a fixed type and does not swing during discharge.

Sputtering is performed such that at least two erosion portions are generated on the surface of the rotary target 10 by the magnetic force generated from the magnetic circuit 12.
Depending on the circuit configuration of the magnetic circuit 12, the number of erosion portions may be three or more, and the number of erosion portions is not limited.

  At a position inside the rotary target 10, at a position further inside the backing tube 11, as a cooling unit for cooling the rotary target 10, a refrigerant supply unit 10 a that supplies a refrigerant by allowing the refrigerant to flow inside the backing tube 11 is provided. It is connected.

  The direction of the normal to the surface of the cathode (the surface of the rotary target 10) composed of the rotary target 10, the backing tube 11, and the magnetic circuit 12 is adjusted by the roller-shaped moving means 111 (hereinafter, also referred to as MR, film forming roller). The moving means 111 is arranged so as to penetrate the film formation surface of the supported flexible substrate S substantially vertically.

  That is, the rotary target 10 provided to face one surface of the substrate S on which the film is formed on the substrate S in the direction of viewing the substrate S in a side sectional view includes the magnetic circuit 12 for forming a plurality of erosion portions per target. . The plurality of erosion portions of the rotary target 10 extend in the axial direction of the rotary target 10 and are arranged in parallel along the traveling direction of the substrate S.

  A mask is provided between the rotary target 10 and the moving means 111 (MR, film-forming roller) for mounting the substrate S, in order to prevent unnecessary film deposition on the periphery and to define a film-forming region with respect to the substrate. 15 are arranged. The mask 15 is provided mainly for the purpose of locally restricting the film deposition on the substrate S and for the purpose of preventing the film deposition on the inner wall of the film forming chamber for forming the film forming space. In the opening 15a, the surface on which the substrate S is to be formed can be viewed from the front side of the rotary target 10.

  The mask 15 is disposed so that the opening 15a is located near the drum-shaped moving means 111 (main roller MR), and the entire film forming region is defined so that the opening 15a defines a film forming region for the substrate S. It is arranged to cover the circumference. With this configuration, when viewed from the erosion portion side of the rotary target 10, a sputtered film can be formed on the base S passing through the opening 15a of the mask 15. That is, the area where the film can be formed on the substrate S is regulated by the opening 15 a of the mask 15.

FIG. 2 is a perspective view showing a mask in the sputtering apparatus of the present embodiment.
As shown in FIGS. 1 and 2, the mask 15 has a plate shape having a substantially rectangular contour, and is arranged near the drum-shaped moving means 111 (main roller MR). The mask 15 is also arranged so that the outline of the opening 15a, which is a substantially rectangular outline, is very close to the drum-shaped moving means 111 (main roller MR), and the outer periphery of the drum-shaped moving means 111 (main roller MR). The position (region and boundary to be masked) corresponding to the surface of the substrate S wound around the surface is arranged so as to coincide with the boundary of the opening 15a so as to be a non-film formation region.

  The opening 15a has a rectangular longitudinal direction parallel to the axial direction of the drum-shaped moving means 111 (main roller MR), and a rectangular short direction coinciding with the scanning direction (progressing direction) of the substrate S. Are arranged as follows.

  The mask 15 has a plate-like shape in which the periphery of a rectangular opening 15a covers the entire periphery of the film formation region, and refrigerant pipes 18 are provided on the four sides of the mask 15 on the substrate S side, respectively. The refrigerant pipe 18 is connected to refrigerant supply means 19 for supplying a refrigerant. The refrigerant pipe 18 and the refrigerant supply unit 19 constitute a cooling unit.

  In the present embodiment, the refrigerant pipe 18 is connected and fixed to the surface of the mask 15 facing the base S, and long refrigerant pipes 18a and 18b are provided on long sides of the periphery of the opening 15a that face each other. Short refrigerant pipes 18c and 18d are provided on opposite short sides of the periphery of the opening 15a.

  The long refrigerant pipes 18a and 18b extend so as to have a substantially straight line shape, and are provided in parallel with the opposing long sides at the periphery of the opening 15a. In addition, both ends of the long refrigerant pipes 18a and 18b protrude from short sides facing each other at the periphery of the opening 15a and extend to the outside of the outline of the mask 15.

  The short refrigerant pipes 18c and 18d are provided substantially in parallel with the short sides facing each other at the periphery of the opening 15a, and both ends thereof are set in the same direction as the ends of the long refrigerant pipes 18a and 18b. Is bent so as to protrude from the opposite short side at the periphery of the mask 15 and extend to the outside of the outline of the mask 15.

  In FIG. 2, the short refrigerant pipes 18c and 18d have their central positions connected to the mask 15 located near the opposite short sides at the periphery of the opening 15a, and both ends of the short refrigerant pipes 18c and 18d have long ends. A configuration in which the whole is curved so as to be close to the refrigerant pipes 18a and 18b and protrude from the ends thereof is illustrated.

  The mounting position of the refrigerant pipe 18 on the mask 15 is not limited to this configuration as long as the mask 15 can be sufficiently cooled.

In the present embodiment, the long refrigerant pipes 18a and 18b and the short refrigerant pipes 18c and 18d are not connected at the peripheral position of the opening 15a, and are connected to the refrigerant supply means 19 independently. It has become.
One end of each of the long refrigerant pipes 18a and 18b and the short refrigerant pipes 18c and 18d is connected to the refrigerant supply means 19 so that the refrigerant can flow therein.

  In FIG. 2, the upper surface of the mask 15 provided with the long refrigerant pipes 18a and 18b and the short refrigerant pipes 18c and 18d is connected to the drum-shaped moving means 111 (main roller MR) around which the base S is wound. They are provided to face each other.

Next, the sputtering method according to the present embodiment will be described.
FIG. 3 is an explanatory diagram illustrating a sputtering method according to the present embodiment.

  During the sputtering process in the sputtering apparatus 100 of this embodiment, the substrate S is supplied from the unwinding means 110 of the unwinding chamber 101, and the substrate S is wound by the winding means 112 of the winding chamber 104. At the same time, the substrate S is wound around the surface of the moving means 111 (main roller MR) in the film forming chamber 103, and the substrate S is scanned in the rotation direction of the main roller MR.

At this time, the warm refrigerant is supplied from the warm refrigerant supply means T1 to the warm refrigerant passage 111a inside the main roller MR, and the base S is set to a predetermined temperature state.
Further, the coolant is supplied from the coolant supply means 19 to the coolant pipe 18 of the mask 15 to cool the mask 15. At the same time, the rotary target 10 is cooled by being filled with the refrigerant 10b supplied from the refrigerant supply means 10a to the inside of the rotary target 10.

  At the same time, an argon gas and an oxygen gas are supplied as sputtering gases from the introducing means P2, and an excess gas is exhausted by the exhausting means P3.

  In this state, power is supplied from the plasma power source 11a to the rotary target 10 via the backing tube 11, and a magnetic force is generated by the magnetic circuit 12 while the rotary target 10 is rotated at a predetermined speed by the rotating means. To generate plasma P so as to be trapped, thereby starting emission of sputtered particles.

  Here, ions and free electrons are incident on the surface of the rotary target 10 from the sputtering gas that has become the plasma P, and a predetermined erosion portion is generated by the magnetic force of the magnetic circuit 12, and Cu of the target base material becomes particles, and the substrate S And a sputtered film SCu is formed on the surface of the substrate S which is rotated (scanned) integrally with the surface of the main roller MR.

Then, as shown in FIG. 3, by generating the plasma P, the temperature of the rotary target 10 on which ions and free electrons are incident rises. Further, the temperature of the rotary target 10 rises due to radiant heat from the plasma P.
Further, the temperature of the mask 15 rises due to radiation heat from the high-temperature plasma P.

  At this time, the cause of the rise in the temperature of the substrate S as described below is considered.

1. Attributable to the Rotary Target 10 First, the temperature of the base S is increased by heat radiation radiated from the high-temperature rotary target 10 and directly reaching the base S.

2. Similarly, since the plasma P is at a high temperature, thermal radiation emitted from the high-temperature plasma P and directly reaching the substrate S, and free electrons or positive and negative ions directly incident on the substrate S from the plasma P are generated. The temperature of the substrate S increases due to the charged particles.

3. Attributable to the mask 15 Further, the temperature of the base S is increased by heat radiation radiated from the high-temperature member such as the mask 15 and directly reaching the base S.

4. Condensation Latent Heat For example, the temperature of the substrate S increases due to cohesive latent heat generated when the film-forming particles made of copper (Cu) once vaporize and adhere to the substrate S to form a sputtered film SCu.

  On the other hand, in the present embodiment, the temperature rise of the base S is prevented as described below.

  By covering the substrate S other than the film formation region with a portion other than the opening 15a in the mask 15, heat radiation from the rotary target 10, heat radiation from the plasma P, free electrons or positive and negative ions incident from the plasma P The charged particles such as are coated so as not to directly reach the substrate S other than the film formation region, and the temperature rise of the substrate S in the film formation region corresponding to the opening 15a is reduced.

  In addition, by covering the rotary target 10 other than the erosion portion with the portion other than the opening 13a in the shield member (case) 13, heat radiation from the rotary target 10 is prevented from directly reaching the base S from other than the opening 13a. By coating, the temperature rise of the substrate S is reduced.

  At the same time, a warm refrigerant is supplied from the warm refrigerant supply means T1 to the warm refrigerant passage 111a inside the main roller MR to reduce the temperature rise in the main roller MR and the base S due to radiant heat, charged particle incidence, and latent heat of aggregation.

At the same time, the coolant 10b is supplied from the coolant supply means 10a to the inside of the rotary target 10 to cool the rotary target 10 and reduce the radiant heat from the rotary target 10.
Further, the rotary target 10 is cooled by the cryopump 13 c at a position immediately before the rotary target 10 is rotated so as to be opposed to the base body S at the opening 13 a, and radiant heat from the rotary target 10 is reduced.

  At the same time, the coolant is supplied from the coolant supply means 19 to the coolant pipe 18 of the mask 15, and the four sides of the opening 15 a in the mask 15 are cooled by the coolant pipes 18 a, 18 b, 18 c, 18 d (18), respectively. , Heat radiation from the plasma P, and a temperature rise in the mask 15 to which charged particles such as free electrons or positive and negative ions incident from the plasma P reach. Thereby, radiant heat from the surface of the mask 15 facing the base S is reduced.

  These prevent deformation of the substrate S due to a rise in temperature, thereby preventing heat loss.

  In addition, when the tension control (tension control) of the flexible base S is performed by the unwinding unit 110, the moving unit 111 (MR), the winding unit 112, and the plurality of guide rollers Gr, wrinkles and the like can be obtained. Is prevented from being generated in the substrate S as thermal damage.

  In the present embodiment, as described above, in particular, by reducing the radiant heat from the mask 15 to the substrate S, the cause of heat loss is eliminated, and deformation such as wrinkles is prevented from occurring as thermal damage. In this state, it is possible to perform sputter deposition. Thereby, the film forming speed can be improved, and the film can be formed by sputtering on the film S scanned at high speed.

  Further, since a temperature change in the mask 15 can be reduced, film peeling caused by thermal expansion of the mask 15 deposited during film formation can be suppressed, thereby preventing dust generation during film formation. As a result, it is possible to achieve an effect that the film formation quality can be improved.

  In the present embodiment, as shown in FIG. 2, the refrigerant pipes 18 are arranged on the four sides around the opening 15a of the mask 15, but the present invention is not limited to this arrangement, and has the following configuration. You can also.

  As shown in FIG. 4, four refrigerant pipes 18a, 18b, 18c, and 18d are provided and connected to the refrigerant supply means 19, and a curved portion 18e is provided at a central position of the short refrigerant pipes 18c and 18d. It is folded a plurality of times to increase the contact length with the mask 15 and improve the cooling efficiency of the mask 15.

  As shown in FIG. 5, three refrigerant pipes 18f, 18c, and 18d are provided, and the refrigerant pipes 18f located on the long sides of the opening 15a are connected by a curved portion 18g. 18c and 18d are connected to the refrigerant supply means 19, respectively.

  As shown in FIG. 6, two refrigerant pipes 18f and 18c are provided, the refrigerant pipe 18f located on the long side of the opening 15a is connected by a curved part 18h, and the curved part 18h is folded a plurality of times as a short refrigerant pipe. At the same time, a bent portion 18e is provided at the center position of the short refrigerant pipe 18c to bend a plurality of times, and the bent portions 18e and 18h increase the contact length with the mask 15, thereby improving the cooling efficiency of the mask 15. The long refrigerant pipe 18f and the short refrigerant pipe 18c are connected to the refrigerant supply means 19, respectively.

  As shown in FIG. 7, one refrigerant pipe 18j is provided, and arranged along the long side, short side, long side, and short side of the opening 15a so as to surround the opening 15a. Is connected to the refrigerant supply means 19.

  As shown in FIG. 8, a single refrigerant pipe 18k is provided, and arranged along the long side, short side, long side, and short side of the opening 15a so as to surround the opening 15a. A plurality of curved portions are continuously arranged so as to meander around the periphery of the opening 15a, and are arranged around the opening 15a with a predetermined width so that the refrigerant pipe 18k comes into contact with the mask 15 so as to be in contact with the mask 15. With the contact length increased, the cooling efficiency of the mask 15 is improved, and the refrigerant pipe 18k is connected to the refrigerant supply means 19.

As shown in FIG. 9, six refrigerant pipes 18 m, 18 c, and 18 d are provided, each of which is connected to the refrigerant supply unit 19.
The long refrigerant pipe 18m located on the long side of the opening 15a is folded back by the curved portion 18n at the center position of the long side of the opening 15a, and each is provided in parallel with the long side of the opening 15a. The contact length with the mask 15 is increased such that the refrigerant pipe 18m contacts the mask 15 with a predetermined width around the mask 15. Further, a curved portion 18e is provided at the center position of the short refrigerant pipes 18c and 18d to bend a plurality of times to increase the contact length with the mask 15 and improve the cooling efficiency of the mask 15.
Note that the turning position of the long refrigerant pipe 18m is not limited to the center of the long side of the opening 15a.

  Even with these configurations, it is possible to cool the above-described mask 15 and achieve the same or more effects.

Hereinafter, a second embodiment of a sputtering apparatus and a sputtering method according to the present invention will be described with reference to the drawings.
FIG. 10 is a schematic cross-sectional view illustrating a sputtering apparatus according to the present embodiment. In the present embodiment, a point different from the above-described first embodiment is related to the anode, and is different from the above-described first embodiment. Corresponding components have the same reference characters allotted, and description thereof will not be repeated.

  In the present embodiment, as shown in FIG. 10, a plate-like anode 14 having a rectangular opening 14 a corresponding to the opening 15 a in the mask 15 is provided between the mask 15 and the rotary target 10. The potential adjusting means 14c is connected.

  Around the opening 14a in the anode 14, refrigerant pipes as cooling means extending in four directions which are width directions orthogonal to the direction of travel of the base S and reducing radiant heat from the anode 14 to the base S 14b and refrigerant supply means 19a connected to the refrigerant pipe 14b are arranged on the surface on the side of the base S so as to surround the opening 14a.

  Further, in the present embodiment, as shown in FIG. 10, the shield member (case) 13 extends around the opening 13a in four directions that are the width direction orthogonal to the traveling direction of the base body S and the traveling direction. A refrigerant pipe 13b as a cooling means for reducing radiant heat from the shield member (case) 13 to the base S and a refrigerant supply means 19b connected to the refrigerant pipe 13b are provided on the base S side so as to surround the opening 13a. Placed on the surface.

  Here, the anode 14 can be provided so as to be capable of locally restricting the film deposition on the substrate S in addition to the potential adjustment on the substrate S, and the film-forming surface of the substrate S is formed at the opening 14 a of the anode 14. , From the front side of the rotary target 10.

In the present embodiment, the arrangement of the refrigerant pipes 14b around the opening 14a in the anode 14 and the arrangement of the refrigerant pipes 13b around the opening 13a in the shield member (case) 13 are different from those in the mask 15 around the opening 15a. It is possible to follow the arrangement of the tube 18.
That is, in the anode 14 and the shield member (case) 13, it is preferable to provide the refrigerant pipe 14b and the refrigerant pipe 13b along the four sides around the rectangular openings 14a, 13a.

  In the present embodiment, the potential of the substrate (film) S is adjusted to a predetermined state by the anode 14, and some charged particles such as free electrons or positive / negative ions from the generated plasma P are directly applied to the substrate (film) S. Light is prevented from entering and the temperature rise of the substrate (film) S is reduced to reduce the thermal load on the substrate S. This makes it possible to reduce the occurrence of heat loss due to the heat load in the base (film) S.

  At the same time, the anode 14 which rises in temperature when plasma is generated is cooled by the refrigerant pipe 14b as a cooling means, and the shield member (case) 13 is cooled by the refrigerant pipe 13b as a cooling means, so that the anode 14 and the shield member (case) are cooled. ) 13 to reduce the radiant heat to the substrate (film) S to reduce the thermal load on the substrate S, and to reduce the occurrence of heat loss in the substrate (film) S due to the thermal load. Thereby, the film forming speed can be improved, and the film can be formed by sputtering on the film S scanned at high speed.

  Further, since a temperature change in the anode 14 and the shield member (case) 13 in addition to the mask 15 can be reduced, film peeling caused by thermal expansion of the mask 15 deposited during film formation can be suppressed. Furthermore, it is possible to suppress film peeling from the deposited anode 14 and the shield member (case) 13 during film formation, thereby preventing generation of dust during film formation and improving film formation quality. It is possible to achieve the effect of being able to do so.

  In the above-described embodiment, the rotary target 10 is used. However, the magnetic circuit can be further swung as a flat target.

  In this case, the target can be a rectangular plate-like member, and a backing plate for transmitting electric power is arranged on the back side of the target. Further on the back side of the backing plate, a magnetic circuit that functions to trap plasma on the target surface is arranged. This magnetic circuit can be of a fixed or oscillating type during discharge.

  Sputtering can be performed such that at least two erosion portions are generated on the surface of the target by the magnetic force generated from the magnetic circuit. In this case, a configuration in which the two erosion portions are at desired positions determined by the magnetic circuit in the lateral direction of the target can be exemplified.

Hereinafter, a third embodiment of the sputtering apparatus and the sputtering method according to the present invention will be described with reference to the drawings.
FIG. 11 is a schematic cross-sectional view illustrating a sputtering apparatus according to the present embodiment, and FIG. 12 is an enlarged schematic cross-sectional view illustrating the vicinity of a mask of the sputtering apparatus according to the present embodiment.

  In the sputtering apparatus 200 of the present embodiment, the processing unit is a film forming unit capable of forming a film by sputtering, and four film forming units are provided around a drum (main roller) to form a multilayer on the sheet-like substrate S. A film is formed. In the sputtering apparatus 200 of the present embodiment, the main roller is housed in the vacuum chamber in a posture in which the axis direction of the main roller coincides with the horizontal direction, and “up”, “down”, and Directions such as “right” and “left” as axial directions are based on “the back side of the paper of FIG. 11” and “the front side of the paper of FIG. 11”.

  As shown in FIG. 11, the sputtering apparatus 200 is installed on a flat floor surface having no so-called pits other than those for rails described later, has a substantially pentagonal profile, and has one side in the axial direction (the depth of the paper in FIG. 11). Side) and a vacuum chamber 201 having an opening on the film-forming unit mounting surface. The upper surface of the vacuum chamber 201 is horizontal (in this case, one apex of the vacuum chamber 201 is located vertically below), and the floor is supported by a support member erected on an extended portion 211 formed on the upper surface. It is supported at a predetermined height from the surface. In addition, around the vacuum chamber 201, a pedestal supported by a leg at a position higher than the upper surface of the vacuum chamber 201 is provided so that electrical components and wiring cables and the like necessary for operation of the sputtering apparatus 200 can be arranged. I have.

  In the upper space 212 of the vacuum chamber 201 including the inside of the extension portion 211, the sheet-shaped base S transferred from the outside is guided to a drum-shaped main roller 202, which will be described later, and is rotated around the drum-shaped main roller 202. A plurality of guide rollers Gr for transferring the sheet-shaped substrate S to the outside are arranged. Note that, in the vacuum chamber 201, an upstream vacuum chamber and a downstream vacuum chamber are provided continuously from a direction orthogonal to the axial direction and horizontally.

  In this case, a sheet-shaped substrate S is wound around the upstream vacuum chamber, and a feed roller for feeding the sheet-shaped substrate S at a constant speed is provided. A winding roller is provided to wind the film-formed sheet-shaped substrate S formed by turning around the periphery of 202.

  The top plate 213 of the vacuum chamber 201 is formed so as to be openable and closable by an actuator 213a, and can perform operations such as winding the sheet-like base S around the main roller 202 and the guide roller Gr from the gantry and performing maintenance. Like that.

  A first vacuum pump including a turbo molecular pump, a rotary pump, and the like is installed on the gantry so that the inside of the vacuum chamber 201 can be evacuated. A pair of support bases are vertically suspended at predetermined intervals in an axial direction at an upper predetermined position in the vacuum chamber 201, and a main roller 202 around which a sheet-shaped substrate S is wound is provided between the support bases. Are rotatably supported via the rotation shaft.

  The main roller 202 has a built-in mechanism for heating or cooling the sheet-shaped base S. A drive motor is fixedly arranged on the atmospheric side wall surface of the vacuum chamber 201 facing one of the support bases located on one side in the axial direction of the main roller 202, and the drive shaft of the drive motor is connected to the rotation shaft of the main roller 202. Thus, the main roller 202 can be driven to rotate at a constant speed. The drive shaft of the drive motor may be provided with a function that allows a heat medium to be supplied to a heating and cooling mechanism for the base S, which is a function of the main roller 202.

  In this manner, the drive motor is fixedly disposed on the atmospheric side wall surface of the vacuum chamber 201 on one of the support bases regardless of the advance / retreat of the first carriage described later, so that the second carriage described later is moved to the retracted position. In particular, when performing the maintenance work of the film forming units 206c and 206d, the operator can perform the maintenance work without receiving the interference of the driving motor. In addition, when there is a pipe through which the heat medium can flow in and out, the operator is further interfered, but with this configuration, the function can be added without the interference. Also, compared to the other support stand located on the other side in the axial direction, one support stand can have the same outer dimensions, but the opening corresponding to the partition wall attached to the first carriage, the cross-sectional area as a beam. Since reduction is inevitable, depending on the weight of the drive motor, one of the supports may be reinforced by a rib or the like.

  In addition, a peripheral edge of an opening (hereinafter, referred to as an “attachment opening”) on one side in the axial direction of the vacuum chamber 201 is in contact with an outer wall surface of the vacuum chamber 201 via a vacuum seal such as an O-ring. The lid for closing the portion is detachably attached by interlocking with the advance and retreat of the first bogie so that the vacuum chamber 201 can be kept airtight. An opening through which the drive motor is inserted is also formed in the lid, and when the lid is attached to the mounting opening, the drive motor projects outside the vacuum chamber 201 while keeping the vacuum chamber 201 airtight. It has become.

  The cover has four partition walls 204 extending in the axial direction and defining processing spaces 216 separated from each other around the main roller 202 in the vacuum chamber 201. The partition walls 204 are detachable at a first retreat position described later. , And the partition 204 itself plays a role as an anti-adhesion plate. Thereby, the structure of the partition wall 204 can be simplified and the size can be reduced as compared with an example in which a deposition plate is separately provided.

  Each partition wall 204 is positioned so as to partially cover the peripheral surface of the drum-shaped main roller 202, and is substantially parallel to the axial direction with a mask plate portion (mask) 241 that limits a film formation range on the sheet-shaped substrate S. And a pair of first side wall plates 242 and 242, which are located on the same surface and protrude from both ends of the mask plate 241 toward the outside in the radial direction of the main roller 202, respectively. A pair of second side wall plates 243 and 243 extending from 242 toward the inner surface of the vacuum chamber 201, and a mask plate unit (mask) 241, A third side wall plate (not shown) having a substantially trapezoidal shape connecting all end surfaces of the side wall plate portion 242 and the second side wall plate portion 243, and a vacuum chamber 201 of the partition wall 204 having the same shape as the third side wall plate portion. Axial end Constituted de fourth side wall plate section provided with (not shown).

  A partition 204 composed of each of the mask plate portions (masks) 241, each of the first side wall plate portions 242, each of the second side wall plate portions 243, each of the third side wall plate portions, and each of the fourth side wall plate portions is attached to the support frame. A partition part of the processing space 216 except for a partition part formed on the side of the film forming unit (film forming means) 206 is formed in a coffin shape without a substantially lid.

  The mask plate portion (mask) 241 is provided with two rectangular openings 241a corresponding to an erosion region formed by a cylindrical rotary target (target material) 262b and a magnetic circuit 262c to be described later.

  The opening 241a is arranged so as to be located near the drum-shaped main roller (MR) 202, and covers the entire periphery of the film formation region so that the opening 241a defines the film formation region for the substrate S. Have been.

  The opening 241a is such that, for each corresponding rotary target (target material) 262b, the rectangular longitudinal direction is parallel to the axial direction of the drum-shaped main roller (MR) 202, and the rectangular short direction is the base S Are arranged so as to coincide with the scanning direction (traveling direction).

  The mask 241 has a plate shape in which the periphery of a rectangular opening 241a covers the entire periphery of the film formation region. As shown in FIG. The pipes 241b are respectively arranged so as to surround the openings 241a, and a refrigerant supply means for supplying a refrigerant is connected to the refrigerant pipes 241b.

In the present embodiment, the refrigerant pipe 241b is connected and fixed to the surface of the mask 241 facing the base S side, and a long refrigerant pipe 241b is provided on a long side facing the periphery of the opening 241a. Short refrigerant pipes 241b are provided on opposite short sides at the periphery of the portion 241a.
At the in-plane position of the mask 241 in the present embodiment, the arrangement of the refrigerant pipes 241b can be set in the same manner as in the first embodiment shown in FIGS. 2, 4 to 9.

  Gas introduction pipes 242b, 242b are provided on the side of each of the first side wall plates 242 opposite to the processing space 216, and gas holes 242a formed in the first side wall plates 242, 242 from the gas introduction tubes 242b, 242b. Through the 242a, a discharge gas or a reaction gas whose flow rate is controlled can be introduced into each processing space 216 (specifically, toward a target material described later). Note that one end of each of the gas introduction pipes 242b, 242b penetrates the lid and is connected to a mass flow controller in a control box described later.

  The lid supporting each partition 204 is held by a first truck as another truck. The first carriage is installed on a rail laid in a pit provided along the axial direction on the floor, and the lid comes into contact with the outer wall surface of the vacuum chamber 201 so that the partition 204 is positioned with respect to the main roller 202. As a result, a partition position where a plurality of processing spaces 216 are defined in the vacuum chamber 201 by the partition walls 204, and a partition wall 204 is taken out from the vacuum chamber 201, and is separated from the partition position to one side in the axial direction of the main roller 202. And a first retreat position (not shown) as another retreat position.

  In order to keep the floor flat, the width of the upper surface of the pit should be a dimension that does not allow the feet of the operator to enter, for example, JIS B9718 "Safety of machinery-To prevent upper limbs and lower limbs from reaching the danger zone. Table 7-Designed to be 35 mm or less by reaching through the fixed opening by the lower limb described in "Safety distance", it is possible to secure a work space that can be regarded as a plane for the assumed worker .

  Further, when the first carriage is moved between the first retreat position and the partition position, a plurality of guide members Gm extending in the axial direction are provided at predetermined positions on the inner surface of the vacuum chamber 201 to guide each partition 204. (See FIG. 11). Then, maintenance such as cleaning and replacement of the mask plate portion (mask) 241 and the first and second side wall plate portions 242 and 243 can be performed at the first retreat position outside the vacuum chamber 201.

  A first control box is also installed on the first truck. The first control box includes a mass flow controller that controls the flow rate of a discharge gas and a reaction gas flowing through the gas introduction pipes 242b, 242b, a drive mechanism that includes a motor that rotationally drives the main roller 202, and the operation of these components. A control device for controlling the operation is stored.

  At the four outer peripheral wall portions of the vacuum chamber 201 facing the processing space 216, other mounting openings 217 are respectively provided, and the film forming units 206 are detachably mounted via the respective mounting openings 217.

  Each of the film forming units 206 has the same form. Here, as shown in FIG. 12, a film forming unit 206b attached to the outer peripheral wall portion at the upper left of FIG. 11 will be described as an example.

The film forming unit 206 includes a support plate 261 as a support that closes the mounting opening 217 by contacting the outer wall surface of the vacuum chamber 201 via a vacuum seal 261 a such as an O-ring.
Thus, when the film formation unit 206b (206) is attached to the vacuum chamber 201 via the support plate 261 (that is, when the attachment opening 217 is closed by the support plate 261), the support plate 261 and the mask plate (mask) 241, a first side wall plate portion 242, 242, a second side wall plate portion 243, 243, a third side wall plate portion (not shown) provided at the other axial end of the vacuum chamber 201 of the partition wall 204, and a partition wall 204. The four processing spaces 216 isolated around the main roller 202 in the vacuum chamber 201 are respectively defined by a fourth side wall plate (not shown) provided at one axial end of the vacuum chamber 201.

On one surface of the support plate 261 facing the outer wall surface of the vacuum chamber 201 (that is, the surface of the support plate 261 abutting on the outer wall surface of the vacuum chamber 201), two target units 262 extending along the axial direction are provided. Is provided. Each target unit 262 has the same form, and includes a cylindrical backing tube 262a, a cylindrical rotary target (target material) 262b extrapolated to the tube backing tube 262a, and a total length in the axial direction inside the cylindrical backing tube 262a. Extending magnetic circuit 262c.
The two backing tubes 262a are rotatably supported between a drive block (not shown) erected on the support plate 261 and a support block with an interval in the axial direction.

  The rotary target 262b is appropriately selected according to the composition of a film formed on the surface of the sheet-shaped substrate S. An exhaust port 261b is opened at the center of the other surface of the support plate 261 located on the atmosphere side during the sputtering process, and a second vacuum pump P3 made of, for example, a turbo molecular pump is directly attached to face the exhaust port 261b. .

  Thereby, independently of the first vacuum pump for evacuating the vacuum chamber 201, the inside of the processing space 216 isolated from each other can be independently evacuated. In this case, a cryocoil 243c is built in each of the second side wall plates 243, 243 to cool the rotary target 262b, and the cryocoil 243c evacuates the processing space 216 in cooperation with the second vacuum pump P3. I can do it. If the cryocoils 243c are incorporated in the second side wall plates 243 and 243 as described above, the cooling efficiency can be improved and the configuration can be further simplified, which is advantageous.

  Further, between the rotary target 262b and the support plate 261, a shielding plate 264 having a substantially U-shaped cross section and extending in the axial direction is provided, and the second side wall plates 243 and 243 having the cryocoils 243c are protected from plasma. Radiation is prevented and spatter particles are prevented from adhering. When the processing space 216 is evacuated by the second vacuum pump P3, the space between the rotary target 262b and the mask plate portion (mask) 241 passes through the gap between the shielding plate 264 and the second side wall plate portion 243. 2. Vacuum is isotropically evacuated to the vacuum pump P3. At this time, water molecules are particularly adsorbed by the cryocoil 243c provided on the second side wall 243, and the processing space 216 can be evacuated to a lower pressure. .

  Here, exhaust pipes (not shown) extending from the back pressure side of the second vacuum pump P3 are connected to a collective pipe, and this collective pipe is connected to a back pump constituting the first vacuum pump installed on the gantry. I have. In addition, a coupling is provided in the collective pipe, and when a second carriage described later is moved to the retreat position, the collective pipe is separated, and one part of the collective pipe moves together with the second bogie. .

  In the present embodiment, the two film forming units 206a, 206d, 206b, and 206c positioned in the vertical direction among the film forming units 206 are each one set, and each set of the film forming units 206a, 206d, 206b, and 206c is Each is held by a second carriage as two carriages. Each of the second carts is installed on a rail laid on a pit provided on the floor surface along the axial direction, as described above, and a pair of film forming units 206a, 206d and 206b, 206c are attached by a support plate 261. The opening 217 can move forward and backward between a mounting position at which the opening 217 can be closed and a second retracting position as a retracting position which is separated from the mounting position in the other axial direction of the drum 202. Further, the film forming unit 206 is provided with posture changing means 207 for changing the posture.

  The attitude changing means 207 includes a slider 271 slidably engaged with an axially long rail member 218 provided at a predetermined position on the outer wall surface of the vacuum chamber 201, an arm 272 fixed to the slider 271, and an arm 272 and an air cylinder 274 connected via a single hinge 273. In the attitude changing means 207, the operation rod 274 a of the air cylinder 274 is rotatably connected to the support plate 261.

  Here, as shown in FIG. 11, the upper film forming unit 206a located on the X axis in the XZ plane with the X axis in the horizontal direction, the Z axis in the vertical direction, and the rotation center of the main roller 202 as the origin. , 206b, the operating rod 274a of the air cylinder 274 extends substantially upward in the Z-axis direction and is connected to the support plate 261 at the first position in which the mounting opening 217 can be closed by the support plate 261 at the mounting position of the second carriage. The position of the hinge portion 273 is set so as to be adjusted.

When the operating rod 74a is contracted by the air cylinder 274, the film forming unit 6a is rotated clockwise by the hinge 273, and the film forming unit 206b is rotated counterclockwise by the hinge 273, so that one surface of the support plate 261 is vertical. The posture is changed to the second posture facing upward (that is, the target unit 262 is facing upward) and held.
In the second posture, the second carriage can move forward and backward without interference of other components, and the height position from the floor surface to the rotary targets 262b of the film forming units 206a and 206b is determined by the rotation of the main roller 202. It is designed to be equivalent to the height position to the center.

  On the other hand, the lower film forming units 206c and 206d, which are entirely in the third and fourth quadrants of the XZ plane, are provided with a mounting opening 2017 formed on the inclined surface of the vacuum chamber 201 positioned vertically below. , The support plate 261 can close the mounting opening 217 at the mounting position of the second bogie from the first position to the second position in which one surface of the support plate 261 faces upward in the vertical direction. Also, the film formation units 206c and 206d interfere with the wall surface of the vacuum chamber 201 and the partition 204 (for example, the first side wall plate portions 242 and 242) existing inside the vacuum chamber 201 and directly change the second posture from the first posture. In this case, the user cannot move from the mounting position of the second carriage to the second retreat position.

  Therefore, in addition to the first and second positions, the film forming units 206c and 206d are taken out of the vacuum chamber 201 obliquely downward, and the postures are changed so as to take a third position that does not hinder the movement of the second carriage. Means 207 are configured. That is, in the first posture, the position of the hinge portion 273 is set such that the operation rod 274a of the air cylinder 274 extends substantially inward in the X-axis direction and is connected to the support plate 261. When the operating rod 274a is contracted by the air cylinder 274, the film forming unit 26c located in the third quadrant is rotated clockwise by the hinge 273, and the film forming unit 26d located in the fourth quadrant is rotated counterclockwise by the hinge 273. It is rotated to take the third posture, and in this state, the second bogie moves forward and backward.

  When the operating rod 274a is further extended from the third position by the air cylinder 274 after the second carriage is moved to the second retreat position, the film forming unit 26c located in the third quadrant is moved counterclockwise by the hinge 273 to the The film forming unit 206d located in the fourth quadrant is rotated clockwise by the hinge 273 to be in the second posture. In this state, the height position of the film forming units 206c and 206d to the rotary target 262b is equal to the height position to the rotation center of the main roller 202.

    A second control box is also provided on the second bogie, and a power supply and an output cable for supplying power to the target material 62b and a refrigerant for circulating the refrigerant in the backing tube 262a are provided in the second control box. , A water supply pipe, a gas supply pipe to the air cylinder 274, a supply source and a supply pipe of the refrigerant to the cryocoil 243c, and a control device for controlling these components are respectively stored.

In the sputtering method of the present embodiment, in each of the film forming units 206, a coolant is supplied from the coolant supply unit to the coolant pipe 241b of the mask 241 to cool the mask 241.
Further, the radiant heat reaching the base S from a portion other than the opening 241a can be blocked by the partition 204.

  This makes it possible to reduce the radiant heat to the substrate S, eliminate the cause of heat loss, and perform sputter film formation while preventing deformation such as wrinkles from occurring as thermal damage. Become. Further, it is possible to improve the film forming speed, and to perform sputter film forming on the film S scanned at high speed.

  Further, since a temperature change in the mask 241 can be reduced, film peeling caused by thermal expansion of the mask 241 deposited during film formation can be suppressed, thereby preventing dust generation during film formation. As a result, it is possible to achieve an effect that the film formation quality can be improved.

  In each of the above embodiments, the number of targets provided around one main roller or the number of film forming means is one or more and an arbitrary plural number in accordance with the state of a film to be formed. be able to.

  Hereinafter, examples according to the present invention will be described.

A specific example of the present invention will be described.
Here, as shown in FIGS. 1 and 2, cooling pipes 18 were provided on the four sides around the opening 15 a of the mask 15, cooling water was supplied as a cooling medium, and a copper Cu film was formed on the film S by sputtering.

The specifications for sputtering are shown below.
T / S dimensions; 90mm
Ar flow rate: 1000 sccm
Pressure; 0.38 Pa
Input power: 38 kW
Number of targets; film thickness for forming two films; 400 nm
Mask supply water amount: 7 L / min

  For comparison, a copper Cu film was formed on the film S by sputtering without supplying cooling water to the mask 15.

In the above sputtering film formation, the film formation rate was measured.
As a result, when the cooling water supply to the mask 15 is performed and the cooling water supply to the mask 15 is not performed, the film formation rate is not reduced. The speed was 170, indicating that the film formation speed was improved.
This makes it possible to increase the scanning speed of the film when performing sputtering film formation with the same film thickness.

  Further, since a temperature change in the mask 15 can be reduced, film peeling caused by thermal expansion of the mask 15 deposited during film formation can be suppressed, thereby preventing dust generation during film formation. As a result, it is possible to achieve an effect that the film formation quality can be improved.

  As an application example of the present invention, a vapor deposition apparatus can be cited.

100, 200: sputtering apparatus 101: unwinding chamber 103: film forming chamber 104: winding chamber S: flexible substrate (film)
110 ... unwinding means 112 ... winding means 111, 202 (MR) ... main roller (moving means)
111a: hot refrigerant passage (temperature control means)
SP: film forming means P1: exhaust means P2: introducing means P3: exhaust means Gr: guide rollers 10, 262b: rotary targets 206 (206a to 206d): film forming units 11, 262a: backing tubes 11a: plasma power supplies 12, 262c ... magnetic circuit 13 ... shield member (case)
13c Cryopump P Plasma 10a Refrigerant supply means 18 (18a to 18n) 14b, 13b, 241b Refrigerant tubes 15, 241 Mask (mask plate portion)
15a, 14a, 13a, 241a Opening SCu Sputtered film 14 Anode

Claims (8)

A sputtering apparatus for forming a film on a flexible substrate moving in a longitudinal direction,
A target provided so as to face one surface of the substrate on which a film is formed;
A magnetic circuit capable of forming an erosion portion on the target during sputtering,
A plate-shaped mask that is disposed near the film-forming region on the base and has an opening that defines the film-forming region and covers the entire periphery of the film-forming region;
Has,
In the mask, the opening is provided with a cooling unit that extends in four directions that are a width direction orthogonal to the direction of travel of the substrate and a direction perpendicular to the direction of travel and reduces radiant heat from the mask to the substrate. Characterized by being disposed on the surface on the substrate side so as to surround the sputtering device. A plate-shaped anode having an opening corresponding to the opening in the mask is provided between the mask and the target,
In the anode, the opening is provided with cooling means extending in four directions that are a width direction perpendicular to the direction of travel of the base and the direction of travel of the base to reduce radiant heat from the anode to the base. The sputtering apparatus according to claim 1, wherein the sputtering apparatus is disposed on the surface on the substrate side so as to surround the substrate. The target is provided with a case that is disposed near the substrate side of the target and has an opening that defines a traveling direction of film-forming particles to the film-forming region,
The case is provided with an opening corresponding to the opening in the mask,
In the case, the opening is provided with cooling means extending in four directions that are a width direction orthogonal to the direction of travel of the base and the direction of travel of the base to reduce radiant heat from the case to the base. 3. The sputtering apparatus according to claim 1, wherein the sputtering apparatus is disposed on the surface on the substrate side so as to surround the substrate. The cooling means is a refrigerant pipe extending around the opening,
4. The sputtering apparatus according to claim 1, wherein a refrigerant supply unit that supplies a refrigerant to the refrigerant pipe is provided. As means for moving the base in the longitudinal direction, a main roller is formed in a drum shape having a rotation axis in the width direction orthogonal to the traveling direction of the base, and is wound around a cylindrical outer surface around the drum in a state where the base is pulled. Has,
The sputtering apparatus according to any one of claims 1 to 4, wherein the main roller is provided with a temperature control means for adjusting a temperature of the substrate during sputtering at an inner position thereof. The target is a rotary target having a rotation axis substantially parallel to the width direction orthogonal to the direction of travel of the base, or a flat target having a swing direction substantially parallel to the width direction. ,
6. The sputtering apparatus according to claim 1, wherein a cooling unit for cooling the target is provided at a position of the target opposite to the base. A sputtering method for forming a film on a flexible substrate that moves in a longitudinal direction,
Along with supplying power to a target facing one surface forming a film-forming surface of the base, a magnetic circuit forms an erosion portion on the target to generate plasma,
By covering the periphery of the film formation region with a plate-shaped mask having an opening and arranged on the entire periphery of the substrate in the vicinity of the film formation region, the film-forming particles from the target reach the arrival region of the substrate. While defining the film formation region,
Cooling means disposed on the substrate-side surface of the mask so as to extend in four directions that are the width direction orthogonal to the traveling direction of the substrate and the traveling direction and surround the opening,
A sputtering method, wherein radiant heat from the mask to the substrate is reduced during sputtering.   The sputtering method according to claim 7, wherein the cooling unit is a refrigerant tube extending around the opening, and the refrigerant supply unit supplies a refrigerant to the refrigerant tube.

Images