CN114497330A - TO ultraviolet device packaging structure - Google Patents
TO ultraviolet device packaging structure Download PDFInfo
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- CN114497330A CN114497330A CN202210400938.7A CN202210400938A CN114497330A CN 114497330 A CN114497330 A CN 114497330A CN 202210400938 A CN202210400938 A CN 202210400938A CN 114497330 A CN114497330 A CN 114497330A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 16
- 239000000919 ceramic Substances 0.000 claims abstract description 45
- 238000001514 detection method Methods 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims description 48
- 229910052751 metal Inorganic materials 0.000 claims description 48
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims 4
- 238000004891 communication Methods 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000009434 installation Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004021 metal welding Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Abstract
The invention discloses a TO ultraviolet device packaging structure, which relates TO the technical field of semiconductor packaging, wherein a ceramic module is arranged on a base, a front bonding pad and a bottom bonding pad are respectively arranged on the upper end surface and the lower end surface of the ceramic module, a plurality of side bonding pads are arranged around the outer side wall of the ceramic module, different side bonding pads can be conducted with different parts corresponding TO the front bonding pad, a deep ultraviolet emission chip is arranged on the front bonding pad, a plurality of detection chips are respectively arranged on each side bonding pad, a plurality of electrode columns sequentially penetrate through the base, the bottom bonding pad and the ceramic module and are conducted with different parts of the front bonding pad, different parts of the front bonding pad can also be respectively conducted with the deep ultraviolet emission chip and conducted with the detection chip through the side bonding pad, and the detection chip can receive signals sent by the deep ultraviolet emission chip. The TO ultraviolet device packaging structure can meet the technical requirements that a single device has deep ultraviolet emission and 360-degree received light communication simultaneously.
Description
Technical Field
The invention relates TO the technical field of semiconductor packaging, in particular TO a TO ultraviolet device packaging structure.
Background
The deep ultraviolet light emitting diode (UVC LED) has the advantages of high reliability, long service life, fast reaction, low power consumption, environmental protection, no pollution, small size and the like, and is widely applied to the fields of ultraviolet light communication, sterilization, disinfection and the like. The ultraviolet light communication has the unique advantages of flexibility, low eavesdropping, omnibearing communication and non-line-of-sight communication, the ultraviolet photons are mainly applied to the important communication fields of short distance, high confidentiality and the like, the energy transmission direction of the ultraviolet light is changed under the scattering action of the deep ultraviolet photons in the atmosphere, and the communication foundation is laid for the ultraviolet light communication. However, the existing deep ultraviolet light emitting diode emitting device and the deep ultraviolet signal receiving device are designed as separate devices, and the angle of receiving signals by the single deep ultraviolet signal receiving device is 180 degrees, so that 360-degree deep ultraviolet signal receiving cannot be realized.
Disclosure of Invention
The invention aims TO provide a TO ultraviolet device packaging structure, which is used for solving the problems in the prior art and meeting the technical requirements that a single device has deep ultraviolet emission and 360-degree received light communication simultaneously.
In order to achieve the purpose, the invention provides the following scheme:
the invention provides a TO ultraviolet device packaging structure, which comprises a base, a ceramic module, a bottom end bonding pad, a front bonding pad, side bonding pads, a deep ultraviolet emitting chip, a detecting chip, a top end lens and electrode columns, wherein the ceramic module is arranged on the base, the front bonding pad and the bottom end bonding pad are respectively arranged on the upper end surface and the lower end surface of the ceramic module, the side bonding pads are multiple and are arranged around the outer side wall of the ceramic module, different side bonding pads can be conducted with different parts corresponding TO the front bonding pad, the deep ultraviolet emitting chip is arranged on the front bonding pad, the detecting chips are multiple and are respectively arranged on each side bonding pad, the electrode columns are multiple and sequentially penetrate through the base, the bottom end bonding pad and the ceramic module and are conducted with different parts of the front bonding pad, different positions of the front bonding pad can be respectively conducted with the deep ultraviolet emission chip and the detection chip through the side bonding pad, the detection chip can receive signals sent by the deep ultraviolet emission chip, and the top end lens is located above the deep ultraviolet emission chip.
Preferably, the front bonding pad comprises a first front bonding pad, a second front bonding pad, a third front bonding pad and a fourth front bonding pad, the deep ultraviolet emission chip is mounted on the upper end face of the first front bonding pad and the upper end face of the second front bonding pad, and the third front bonding pad and the fourth front bonding pad can be conducted with the detection chip through the side bonding pad.
Preferably, the bottom outer fringe of base is equipped with annular step, just a plurality of first through-holes have been seted up on the base, correspond on the bottom pad each the second through-hole has been seted up to the position of first through-hole, first through-hole with the second through-hole all is used for the passing through of electrode column.
Preferably, the inner diameter of the second through hole is larger than the inner diameter of the first through hole.
Preferably, each first through hole is internally provided with an insulating sleeve, two ends of each insulating sleeve are open, and one electrode column is coaxially arranged inside one insulating sleeve.
Preferably, the detection device further comprises an annular lens, the annular lens is sleeved on the periphery of the base and the ceramic module, the lower end of the annular lens is in contact with the upper end face of the annular step, the upper end of the annular lens is fixed with the lower end of the top end lens, and the annular lens is located outside each detection chip.
Preferably, the optical fiber connector further comprises a pipe cap, the pipe cap is sleeved on the periphery of the annular lens, the lower end of the pipe cap is in contact with the upper end face of the annular step, the outer edge of the lower end of the pipe cap is flush with the outer edge of the annular step, the upper end of the pipe cap is higher than the annular edge of the lower end of the top end lens and lower than the upper end of the top end lens, and light outlets are formed in positions, corresponding to the side pads, of the pipe cap.
Preferably, four planar structures are arranged on the side wall of the ceramic module, the planar structures are uniformly arranged around the side wall of the ceramic module, adjacent planar structures are not contacted, one side pad is correspondingly mounted on one planar structure, and the side pads are divided into a first side pad and a second side pad; a plurality of third through holes are formed in the ceramic module and used for the electrode columns to pass through; still include first metal post and second metal post, just first metal post with the second metal post is fixed respectively different on the planar structure, first metal post can pass through first side pad switches on the lower floor's circuit of side pad with the positive pad of fourth, the second metal post can pass through second side pad switches on the upper strata circuit of side pad with the positive pad of third.
Preferably, front through-hole grooves are further formed in the positions, corresponding to the first metal column and the second metal column, of the upper end face of the ceramic module, the two front through-hole grooves can be respectively communicated with the first metal column and the second metal column, side through-holes are formed in the plane structures, copper metal can be electroplated inside the side through-holes, and the metal columns and the side pads are communicated through the electroplated copper metal.
Preferably, the positive electrode and the positive electrode of each detection chip correspond to each other, and the negative electrode of each detection chip correspond to each other.
Compared with the prior art, the invention has the following technical effects:
the TO ultraviolet device packaging structure provided by the invention has the advantages that the front bonding pad and the bottom bonding pad are respectively arranged on the upper end surface and the lower end surface of the ceramic module, the side bonding pads are multiple and are arranged around the outer side wall of the ceramic module, different side bonding pads can be conducted with different parts corresponding TO the front bonding pad, thereby facilitating the realization of circuit conduction of a deep ultraviolet emitting chip arranged on the front bonding pad and a detecting chip arranged at the upper end of each side bonding pad, the different parts of the front bonding pad can also be respectively conducted with the deep ultraviolet emitting chip and conducted with the detecting chip through the side bonding pads, and the detecting chip can receive signals sent by the deep ultraviolet emitting chip, meanwhile, the side bonding pads and the detecting chip which are circumferentially arranged can realize the front emission of deep ultraviolet photon signals by a single TO device, the side surface receives the deep ultraviolet photon signals from 360 degrees, and the requirements that the TO ultraviolet device integrates the deep ultraviolet emitting signals and the deep ultraviolet signals are received are achieved, the system structure is simplified, and the top lens is positioned above the deep ultraviolet emission chip, so that the light condensation function can be realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a TO ultraviolet device package structure provided by the present invention;
FIG. 2 is a cross-sectional view of FIG. 1;
FIG. 3 is an exploded view of FIG. 1;
FIG. 4 is a schematic diagram of the internal structure of the TO UV device package structure provided by the present invention;
FIG. 5 is a schematic diagram of the external circuitry of the ceramic module of the present invention;
FIG. 6 is a schematic structural view of a ceramic module according to the present invention;
FIG. 7 is a schematic view of the construction of the cap of the present invention;
FIG. 8 is a schematic view of the structure of the annular lens of the present invention;
in the figure: 100-TO UV device package structure, 1-cap, 2-top lens, 3-ring lens, 4-deep UV emitting chip, 5-front pad, 6-ceramic module, 7-probing chip, 8-side pad, 9-bottom pad, 10-base, 11-insulating sleeve, 12-electrode column, 13-light outlet, 14-ring edge, 15-third via, 16-front via slot, 17-first metal column, 18-side via, 19-second via, 20-first via, 21-ring step, 22-planar structure, 23-first front pad, 24-second front pad, 25-third front pad, 26-fourth front pad, 27-first side pad, 28-second side pad, 29-brim, 30-second metal post.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims TO provide a TO ultraviolet device packaging structure, which aims TO solve the technical problems that the existing TO ultraviolet device is designed in a split mode, a single TO ultraviolet device can not transmit and receive deep ultraviolet signals, and the structure is complex.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
As shown in fig. 1-8, the present invention provides a TO ultraviolet device packaging structure 100, which comprises a base 10, a ceramic module 6, a bottom pad 9, a front pad 5, a side pad 8, a deep ultraviolet emitting chip 4, a probing chip 7, a top lens 2 and an electrode pillar 12, wherein the ceramic module 6 is mounted on the base 10, the base 10 is made of a metal material and serves as a supporting carrier of the whole packaging structure, the front pad 5 and the bottom pad 9 are respectively mounted on the upper end surface and the lower end surface of the ceramic module 6 for facilitating the conduction of a circuit, the front pad 5, the bottom pad 9 and the side pad 8 are all formed by copper-plated metal TO form a metal circuit pad structure and are integrated with the ceramic module 6 by metal solder welding, the side pads 8 are multiple and mounted around the outer side wall of the ceramic module 6, different side pads 8 can be conducted with different corresponding parts of the front pad 5, thereby facilitating the realization of circuit conduction of the deep ultraviolet emitting chip 4 arranged on the front bonding pad 5 and the detecting chip 7 arranged on the upper end of each side bonding pad 8, the electrode columns 12 are multiple and all sequentially pass through the base 10, the bottom bonding pad 9 and the ceramic module 6 and are conducted with different parts of the front bonding pad 5, different parts of the front bonding pad 5 can also be respectively conducted with the deep ultraviolet emitting chip 4 and the detecting chip 7 through the side bonding pad 8, and the detecting chip 7 can receive signals sent by the deep ultraviolet emitting chip 4, meanwhile, the side bonding pad 8 and the detecting chip 7 which are circumferentially arranged can realize the front emission of deep ultraviolet photon signals by a single TO device and the side reception of deep ultraviolet photon signals from 360 degrees, thereby achieving the requirement that the TO ultraviolet device integrates the deep ultraviolet emitting signal and the deep ultraviolet signal receiving, simplifying the system structure, the top lens 2 is arranged above the deep ultraviolet emitting chip 4, further, the light-gathering function can be realized, and a ring of annular edge 14 is arranged on the periphery of the lower end of the top end lens 2.
Specifically, as shown in fig. 5, the front pad 5 includes a first front pad 23, a second front pad 24, a third front pad 25 and a fourth front pad 26, and adjacent pads in the front pads 5 are not in direct contact with each other, the deep ultraviolet emitting chip 4 is mounted on the upper end surfaces of the first front pad 23 and the second front pad 24 and is welded and fixed at high temperature, the third front pad 25 and the fourth front pad 26 can be conducted with the detecting chip 7 through the side pad 8, so that the front emission of the deep ultraviolet signal through the deep ultraviolet emitting chip 4 is facilitated, and the side reception of the deep ultraviolet signal is achieved through the detecting chip 7.
The bottom outer fringe of base 10 is equipped with annular step 21, and the setting of annular step 21 can be convenient for the installation of other parts, has seted up a plurality of first through-holes 20 on the base 10, and the second through-hole 19 has been seted up to the position that corresponds each first through-hole 20 on the bottom pad 9, and first through-hole 20 and second through-hole 19 all are used for passing through of electrode column 12 to in the switching on of realization circuit. Preferably, the base 10 is integrally formed by punching through a die, and the production process is simple.
The inner diameter of the second through hole 19 is larger than that of the first through hole 20, so that short circuit abnormality between the electrode column 12 and the bottom end bonding pad 9 during installation is prevented.
All install an insulating cover 11 in each first through-hole 20, the internal diameter of first through-hole 20 equals with insulating cover 11's external diameter, and the coating of first through-hole 20 inner wall has the high temperature adhesive, realizes that insulating cover 11 and base 10's high temperature bonding is fixed, the both ends opening of insulating cover 11, and an electrode post 12 of 11 inside coaxial arrangements of insulating cover, and the upper end of electrode post 12 stretches out insulating cover 11, fixes and insulates electrode post 12 through insulating cover 11.
The TO ultraviolet device packaging structure 100 further comprises an annular lens 3, the annular lens 3 is sleeved on the peripheries of the base 10 and the ceramic module 6, the lower end of the annular lens 3 is in contact with the upper end face of the annular step 21 and is fixed through high-temperature welding of metal solder, the upper end of the annular lens 3 is fixed with the lower end of the top end lens 2, and the annular lens 3 is located outside each detection chip 7 and is used for protecting the detection chips 7, so that the service life of the whole device is prolonged, and meanwhile, the attractiveness of the whole device is improved.
The TO ultraviolet device packaging structure 100 provided by the invention further comprises a tube cap 1, the tube cap 1 is sleeved on the periphery of the annular lens 3, the lower end of the tube cap 1 is in contact with the upper end face of the annular step 21, the outer edge of the lower end of the tube cap 1 is flush with the outer edge of the annular step 21, the installation of the tube cap 1 is realized, the integral aesthetic property is ensured, and meanwhile, the influence of exposure of electronic devices on the aesthetic property is avoided, the upper end of the tube cap 1 is higher than the annular edge 14 of the lower end of the top end lens 2 and lower than the upper end of the top end lens 2, preferably, as shown in figure 7, a circle of cap edge 29 is arranged at the lower end of the tube cap 1, the lower end face of the cap edge 29 is in contact with and fixed TO the upper end face of the annular edge 14 of the top end lens 2, so as TO realize stable installation, light outlets 13 are formed in positions, corresponding TO the side bonding pads 8, on the tube cap 1, and the influence on the reception of deep ultraviolet signals by the detection chip 7 is avoided. Preferably, the cap 1 is integrally extruded by a die.
As shown in fig. 4, four planar structures 22 are disposed on the side wall of the ceramic module 6, each planar structure 22 is parallel to the axial direction of the ceramic module 6, and the planar structures 22 are uniformly disposed around the side wall of the ceramic module 6, so that the side pads 8 and the probing chip 7 are conveniently mounted, adjacent planar structures 22 are not in contact with each other, one planar structure 22 is correspondingly mounted with one side pad 8, the side pad 8 is divided into a first side pad 27 and a second side pad 28, the first side pad 27 is used for conducting a lower layer of circuit, and the second side pad 28 is used for conducting an upper layer of circuit; the ceramic module 6 is provided with a plurality of third through holes 15, the third through holes 15 are used for the electrode posts 12 to pass through, metal solders are filled in the third through holes 15, the ceramic module 6 and the electrode posts 12 are welded together through high temperature to form stable connection, the positions of the first through holes 20, the second through holes 19 and the third through holes 15 correspond to one another, the number of the electrode posts 12 is four, the electrode posts 12 can sequentially penetrate through the first through holes 20, the second through holes 19 and the third through holes 15 and are communicated with different pads in the front pads 5, namely the four electrode posts 12 are respectively communicated with the first front pad 23, the second front pad 24, the third front pad 25 and the fourth front pad 26; the detection chip comprises a first metal column 17 and a second metal column 30, wherein the first metal column 17 and the second metal column 30 are respectively fixed on different plane structures 22, the first metal column 17 can be conducted with a lower-layer circuit of a side pad 8 and a fourth front pad 26 through a first side pad 27, the second metal column 30 can be conducted with an upper-layer circuit of the side pad 8 and a third front pad 25 through a second side pad 28, and then the detection chip 7 is conducted through the third front pad 25 and the fourth front pad 26. Preferably, the planar structure 22 of the ceramic module 6 is machined by milling.
Front through-hole groove 16 has still been seted up to ceramic module 6's up end to the position that corresponds first metal column 17 and second metal column 30, and two front through-hole grooves 16 can switch on with first metal column 17 and second metal column 30 respectively, in the actual production manufacturing process, carry out the electro-coppering metal through circuit design structure to ceramic module 6's planar structure 22 in proper order, form a parallelly connected circuit layer structure, and fill in front through-hole groove 16 through the electro-coppering metal, side through-hole 18 has all been seted up on each planar structure 22, and the inside electro-coppering metal that can of side through-hole 18, and switch on metal column and side pad 8 through the electro-coppering metal, be convenient for realize switching on of circuit. Preferably, each of the side through holes 18, the front through hole groove 16, the third through hole 15, and the like is formed by laser drilling at a predetermined position of the planar structure 22 of the ceramic module 6.
The positive electrode and the positive electrode of each detection chip 7 correspond to each other, and the negative electrode correspond to each other, so that a parallel circuit structure of a plurality of detection chips 7 is formed, and higher deep ultraviolet signal receiving sensitivity is realized.
In the actual processing process, the nickel-palladium-gold material metal is electroplated outside the integral structure in sequence in an electroplating mode.
The principle and the implementation mode of the present invention are explained by applying specific examples in the present specification, and the above descriptions of the examples are only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In summary, this summary should not be construed to limit the present invention.
Claims (10)
1. A TO ultraviolet device packaging structure is characterized in that: the deep ultraviolet radiation detection device comprises a base, a ceramic module, a bottom pad, a front pad, side pads, a deep ultraviolet radiation chip, a detection chip, a top lens and electrode columns, wherein the ceramic module is installed on the base, the front pad and the bottom pad are respectively installed on the upper end face and the lower end face of the ceramic module, the side pads are multiple and are installed around the outer side wall of the ceramic module, different side pads can be conducted with different parts corresponding to the front pad, the deep ultraviolet radiation chip is installed on the front pad, the detection chips are multiple and are respectively installed on the side pads, the electrode columns are multiple, sequentially penetrate through the base, the bottom pad and the ceramic module and are conducted with different parts of the front pad, different parts of the front pad can also be respectively conducted with the deep ultraviolet radiation chip and the detection chip through the side pad, and the detection chip can receive a signal sent by the deep ultraviolet emission chip, and the top end lens is positioned above the deep ultraviolet emission chip.
2. The TO ultraviolet device package structure of claim 1, wherein: the front bonding pad comprises a first front bonding pad, a second front bonding pad, a third front bonding pad and a fourth front bonding pad, the deep ultraviolet emission chip is installed on the upper end face of the first front bonding pad and the upper end face of the second front bonding pad, and the third front bonding pad and the fourth front bonding pad can be conducted through the side bonding pad and the detection chip.
3. The TO ultraviolet device package structure of claim 1, wherein: the bottom outer fringe of base is equipped with annular step, just a plurality of first through-holes have been seted up on the base, correspond on the pad of bottom each the second through-hole has been seted up to the position of first through-hole, first through-hole with the second through-hole all is used for the passing through of electrode column.
4. The TO ultraviolet device package structure of claim 3, wherein: the inner diameter of the second through hole is larger than that of the first through hole.
5. The TO ultraviolet device package structure of claim 3, wherein: and each first through hole is internally provided with an insulating sleeve, two ends of each insulating sleeve are opened, and one electrode column is coaxially arranged in one insulating sleeve.
6. The TO ultraviolet device package structure of claim 3, wherein: the annular lens is sleeved on the periphery of the base and the ceramic module, the lower end of the annular lens is in contact with the upper end face of the annular step, the upper end of the annular lens is fixed with the lower end of the top end lens, and the annular lens is located outside each detection chip.
7. The TO ultraviolet device package structure of claim 6, wherein: the LED lamp tube is characterized by further comprising a tube cap, the tube cap is sleeved on the periphery of the annular lens, the lower end of the tube cap is in contact with the upper end face of the annular step, the outer edge of the lower end of the tube cap is flush with the outer edge of the annular step, the upper end of the tube cap is higher than the annular edge of the lower end of the top end lens and lower than the upper end of the top end lens, and light outlets are formed in positions, corresponding to the side surface welding discs, on the tube cap.
8. The TO ultraviolet device package structure of claim 2, wherein: the side wall of the ceramic module is provided with four planar structures, the planar structures are uniformly arranged around the side wall of the ceramic module, adjacent planar structures are not in contact with each other, one planar structure is correspondingly provided with one side surface bonding pad, and the side surface bonding pads are divided into a first side surface bonding pad and a second side surface bonding pad; a plurality of third through holes are formed in the ceramic module and used for the electrode columns to pass through; still include first metal post and second metal post, just first metal post with the second metal post is fixed respectively different on the planar structure, first metal post can pass through first side pad switches on the lower floor's circuit of side pad with the positive pad of fourth, the second metal post can pass through second side pad switches on the upper strata circuit of side pad with the positive pad of third.
9. The TO ultraviolet device package structure of claim 8, wherein: the upper end face of the ceramic module is provided with front through hole grooves corresponding to the positions of the first metal column and the second metal column, the two front through hole grooves can be respectively communicated with the first metal column and the second metal column, each plane structure is provided with side through holes, copper metal can be electroplated inside the side through holes, and the metal columns and the side pads are communicated through the electroplated copper metal.
10. The TO ultraviolet device package structure of claim 1, wherein: the positive pole and the positive pole of each detection chip correspond to each other, and the negative pole of each detection chip correspond to each other.
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| CN202210400938.7A CN114497330B (en) | 2022-04-18 | 2022-04-18 | TO ultraviolet device packaging structure |
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| CN202210400938.7A CN114497330B (en) | 2022-04-18 | 2022-04-18 | TO ultraviolet device packaging structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114784127A (en) * | 2022-06-22 | 2022-07-22 | 至芯半导体(杭州)有限公司 | Detector packaging structure |
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| CN114784127B (en) * | 2022-06-22 | 2022-08-26 | 至芯半导体(杭州)有限公司 | Probe device packaging structure |
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