CN114497096B - 光电转换设备、光电转换系统和可移动体 - Google Patents

光电转换设备、光电转换系统和可移动体

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Publication number
CN114497096B
CN114497096B CN202111265276.9A CN202111265276A CN114497096B CN 114497096 B CN114497096 B CN 114497096B CN 202111265276 A CN202111265276 A CN 202111265276A CN 114497096 B CN114497096 B CN 114497096B
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China
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semiconductor region
photoelectric conversion
conversion apparatus
region
conductivity type
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CN202111265276.9A
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English (en)
Chinese (zh)
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CN114497096A (zh
Inventor
爱满·阿布德尔加夫
岩田旬史
森本和浩
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Canon Inc
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Canon Inc
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4861—Circuits for detection, sampling, integration or read-out
    • G01S7/4863—Detector arrays, e.g. charge-transfer gates
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G01S17/894—Three-dimensional [3D] imaging with simultaneous measurement of time-of-flight at a two-dimensional [2D] array of receiver pixels, e.g. time-of-flight cameras or flash lidar
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Electromagnetism (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202111265276.9A 2020-10-28 2021-10-28 光电转换设备、光电转换系统和可移动体 Active CN114497096B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2020180165 2020-10-28
JP2020-180165 2020-10-28
JP2021047087 2021-03-22
JP2021-047087 2021-03-22
JP2021157065A JP7551589B2 (ja) 2020-10-28 2021-09-27 光電変換装置、光電変換システム
JP2021-157065 2021-09-27

Publications (2)

Publication Number Publication Date
CN114497096A CN114497096A (zh) 2022-05-13
CN114497096B true CN114497096B (zh) 2026-03-17

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Country Link
US (2) US12324265B2 (https=)
EP (1) EP3993042B1 (https=)
JP (2) JP7551589B2 (https=)
CN (1) CN114497096B (https=)

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JP7551589B2 (ja) * 2020-10-28 2024-09-17 キヤノン株式会社 光電変換装置、光電変換システム
US11967664B2 (en) * 2022-04-20 2024-04-23 Globalfoundries Singapore Pte. Ltd. Photodiodes with serpentine shaped electrical junction
JP2023178687A (ja) * 2022-06-06 2023-12-18 キヤノン株式会社 光電変換装置、光電変換システム
JP7744887B2 (ja) * 2022-08-26 2025-09-26 株式会社東芝 光検出器、光検出システム、ライダー装置及び移動体
JP7686605B2 (ja) 2022-09-28 2025-06-02 キヤノン株式会社 光電変換装置、制御方法、及びコンピュータプログラム
JP7646611B2 (ja) * 2022-09-28 2025-03-17 キヤノン株式会社 光電変換装置、制御方法、及びコンピュータプログラム
JP7686607B2 (ja) * 2022-10-27 2025-06-02 キヤノン株式会社 光電変換装置、制御方法、及びコンピュータプログラム
JP7646714B2 (ja) * 2023-02-24 2025-03-17 キヤノン株式会社 撮像装置、撮像方法、及びコンピュータプログラム
WO2025198036A1 (ja) * 2024-03-22 2025-09-25 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器

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JP2018064086A (ja) * 2016-10-13 2018-04-19 キヤノン株式会社 光検出装置および光検出システム
WO2020059702A1 (ja) * 2018-09-21 2020-03-26 ソニーセミコンダクタソリューションズ株式会社 撮像装置

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JP2007317768A (ja) 2006-05-24 2007-12-06 Matsushita Electric Ind Co Ltd 光半導体装置およびその製造方法
US10700114B2 (en) * 2016-04-25 2020-06-30 Sony Corporation Solid-state imaging element, method for manufacturing the same, and electronic apparatus
JP7058479B2 (ja) * 2016-10-18 2022-04-22 ソニーセミコンダクタソリューションズ株式会社 光検出器
JP2020009790A (ja) * 2016-11-09 2020-01-16 シャープ株式会社 アバランシェフォトダイオード
JP6932580B2 (ja) 2017-08-04 2021-09-08 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
US10204950B1 (en) * 2017-09-29 2019-02-12 Taiwan Semiconductor Manufacturing Company Ltd. SPAD image sensor and associated fabricating method
JP2020170812A (ja) * 2019-04-05 2020-10-15 ソニーセミコンダクタソリューションズ株式会社 アバランシェフォトダイオードセンサおよびセンサ装置
WO2021085484A1 (ja) * 2019-10-30 2021-05-06 パナソニックＩｐマネジメント株式会社 光検出器
JP2022055214A (ja) 2020-09-28 2022-04-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、電子機器および固体撮像装置の製造方法
JP7551589B2 (ja) * 2020-10-28 2024-09-17 キヤノン株式会社 光電変換装置、光電変換システム
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WO2020059702A1 (ja) * 2018-09-21 2020-03-26 ソニーセミコンダクタソリューションズ株式会社 撮像装置

Also Published As

Publication number Publication date
US12324265B2 (en) 2025-06-03
EP3993042A2 (en) 2022-05-04
EP3993042B1 (en) 2026-04-01
JP2022071828A (ja) 2022-05-16
EP3993042A3 (en) 2022-06-22
JP2024163157A (ja) 2024-11-21
CN114497096A (zh) 2022-05-13
US20250248160A1 (en) 2025-07-31
JP7551589B2 (ja) 2024-09-17
JP7791267B2 (ja) 2025-12-23
US20220130877A1 (en) 2022-04-28

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