JP7551589B2 - 光電変換装置、光電変換システム - Google Patents

光電変換装置、光電変換システム Download PDF

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Publication number
JP7551589B2
JP7551589B2 JP2021157065A JP2021157065A JP7551589B2 JP 7551589 B2 JP7551589 B2 JP 7551589B2 JP 2021157065 A JP2021157065 A JP 2021157065A JP 2021157065 A JP2021157065 A JP 2021157065A JP 7551589 B2 JP7551589 B2 JP 7551589B2
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semiconductor region
photoelectric conversion
conversion device
avalanche photodiode
semiconductor
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Japanese (ja)
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JP2022071828A (ja
JP2022071828A5 (https=
Inventor
アイマン アブデルガファ
旬史 岩田
和浩 森本
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2021157065A priority Critical patent/JP7551589B2/ja
Priority to EP21203805.3A priority patent/EP3993042B1/en
Priority to US17/509,751 priority patent/US12324265B2/en
Priority to CN202111265276.9A priority patent/CN114497096B/zh
Publication of JP2022071828A publication Critical patent/JP2022071828A/ja
Publication of JP2022071828A5 publication Critical patent/JP2022071828A5/ja
Priority to JP2024148315A priority patent/JP7791267B2/ja
Application granted granted Critical
Publication of JP7551589B2 publication Critical patent/JP7551589B2/ja
Priority to US19/182,416 priority patent/US20250248160A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4861—Circuits for detection, sampling, integration or read-out
    • G01S7/4863—Detector arrays, e.g. charge-transfer gates
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G01S17/894—Three-dimensional [3D] imaging with simultaneous measurement of time-of-flight at a two-dimensional [2D] array of receiver pixels, e.g. time-of-flight cameras or flash lidar
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Electromagnetism (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2021157065A 2020-10-28 2021-09-27 光電変換装置、光電変換システム Active JP7551589B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2021157065A JP7551589B2 (ja) 2020-10-28 2021-09-27 光電変換装置、光電変換システム
EP21203805.3A EP3993042B1 (en) 2020-10-28 2021-10-20 Photoelectric conversion apparatus and photoelectric conversion system
US17/509,751 US12324265B2 (en) 2020-10-28 2021-10-25 Photoelectric conversion apparatus and photoelectric conversion system
CN202111265276.9A CN114497096B (zh) 2020-10-28 2021-10-28 光电转换设备、光电转换系统和可移动体
JP2024148315A JP7791267B2 (ja) 2020-10-28 2024-08-30 光電変換装置、光電変換システム
US19/182,416 US20250248160A1 (en) 2020-10-28 2025-04-17 Photoelectric conversion apparatus and photoelectric conversion system

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020180165 2020-10-28
JP2020180165 2020-10-28
JP2021047087 2021-03-22
JP2021047087 2021-03-22
JP2021157065A JP7551589B2 (ja) 2020-10-28 2021-09-27 光電変換装置、光電変換システム

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JP2022071828A JP2022071828A (ja) 2022-05-16
JP2022071828A5 JP2022071828A5 (https=) 2023-09-01
JP7551589B2 true JP7551589B2 (ja) 2024-09-17

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US (2) US12324265B2 (https=)
EP (1) EP3993042B1 (https=)
JP (2) JP7551589B2 (https=)
CN (1) CN114497096B (https=)

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Publication number Priority date Publication date Assignee Title
JP7551589B2 (ja) * 2020-10-28 2024-09-17 キヤノン株式会社 光電変換装置、光電変換システム
US11967664B2 (en) * 2022-04-20 2024-04-23 Globalfoundries Singapore Pte. Ltd. Photodiodes with serpentine shaped electrical junction
JP2023178687A (ja) * 2022-06-06 2023-12-18 キヤノン株式会社 光電変換装置、光電変換システム
JP7744887B2 (ja) * 2022-08-26 2025-09-26 株式会社東芝 光検出器、光検出システム、ライダー装置及び移動体
JP7686605B2 (ja) 2022-09-28 2025-06-02 キヤノン株式会社 光電変換装置、制御方法、及びコンピュータプログラム
JP7646611B2 (ja) * 2022-09-28 2025-03-17 キヤノン株式会社 光電変換装置、制御方法、及びコンピュータプログラム
JP7686607B2 (ja) * 2022-10-27 2025-06-02 キヤノン株式会社 光電変換装置、制御方法、及びコンピュータプログラム
JP7646714B2 (ja) * 2023-02-24 2025-03-17 キヤノン株式会社 撮像装置、撮像方法、及びコンピュータプログラム
WO2025198036A1 (ja) * 2024-03-22 2025-09-25 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007135809A1 (ja) 2006-05-24 2007-11-29 Panasonic Corporation 光半導体装置およびその製造方法
JP2018064086A (ja) 2016-10-13 2018-04-19 キヤノン株式会社 光検出装置および光検出システム
JP2019033136A (ja) 2017-08-04 2019-02-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
WO2020059702A1 (ja) 2018-09-21 2020-03-26 ソニーセミコンダクタソリューションズ株式会社 撮像装置

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US10700114B2 (en) * 2016-04-25 2020-06-30 Sony Corporation Solid-state imaging element, method for manufacturing the same, and electronic apparatus
JP7058479B2 (ja) * 2016-10-18 2022-04-22 ソニーセミコンダクタソリューションズ株式会社 光検出器
JP2020009790A (ja) * 2016-11-09 2020-01-16 シャープ株式会社 アバランシェフォトダイオード
US10204950B1 (en) * 2017-09-29 2019-02-12 Taiwan Semiconductor Manufacturing Company Ltd. SPAD image sensor and associated fabricating method
JP2020170812A (ja) * 2019-04-05 2020-10-15 ソニーセミコンダクタソリューションズ株式会社 アバランシェフォトダイオードセンサおよびセンサ装置
WO2021085484A1 (ja) * 2019-10-30 2021-05-06 パナソニックＩｐマネジメント株式会社 光検出器
JP2022055214A (ja) 2020-09-28 2022-04-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、電子機器および固体撮像装置の製造方法
JP7551589B2 (ja) * 2020-10-28 2024-09-17 キヤノン株式会社 光電変換装置、光電変換システム
US12581761B2 (en) * 2022-01-01 2026-03-17 Canon Kabushiki Kaisha Photoelectric conversion apparatus and photoelectric conversion system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007135809A1 (ja) 2006-05-24 2007-11-29 Panasonic Corporation 光半導体装置およびその製造方法
JP2018064086A (ja) 2016-10-13 2018-04-19 キヤノン株式会社 光検出装置および光検出システム
JP2019033136A (ja) 2017-08-04 2019-02-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
WO2020059702A1 (ja) 2018-09-21 2020-03-26 ソニーセミコンダクタソリューションズ株式会社 撮像装置

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Publication number Publication date
US12324265B2 (en) 2025-06-03
EP3993042A2 (en) 2022-05-04
EP3993042B1 (en) 2026-04-01
JP2022071828A (ja) 2022-05-16
EP3993042A3 (en) 2022-06-22
JP2024163157A (ja) 2024-11-21
CN114497096A (zh) 2022-05-13
US20250248160A1 (en) 2025-07-31
JP7791267B2 (ja) 2025-12-23
CN114497096B (zh) 2026-03-17
US20220130877A1 (en) 2022-04-28

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