CN114488709B - 曝光装置和制造物品的方法 - Google Patents
曝光装置和制造物品的方法 Download PDFInfo
- Publication number
- CN114488709B CN114488709B CN202210113165.4A CN202210113165A CN114488709B CN 114488709 B CN114488709 B CN 114488709B CN 202210113165 A CN202210113165 A CN 202210113165A CN 114488709 B CN114488709 B CN 114488709B
- Authority
- CN
- China
- Prior art keywords
- mark
- substrate
- resist film
- exposure
- marks
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 79
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 212
- 238000005259 measurement Methods 0.000 claims description 25
- 239000010408 film Substances 0.000 description 86
- 238000012545 processing Methods 0.000 description 18
- 238000012546 transfer Methods 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 10
- 239000003550 marker Substances 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000002356 single layer Substances 0.000 description 5
- 238000012937 correction Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000005856 abnormality Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70533—Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70653—Metrology techniques
- G03F7/70675—Latent image, i.e. measuring the image of the exposed resist prior to development
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70766—Reaction force control means, e.g. countermass
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/708—Mark formation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67282—Marking devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Inorganic Chemistry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Liquid Crystal (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210113165.4A CN114488709B (zh) | 2018-04-03 | 2019-04-03 | 曝光装置和制造物品的方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-071919 | 2018-04-03 | ||
| JP2018071919A JP6814174B2 (ja) | 2018-04-03 | 2018-04-03 | 露光装置、物品の製造方法、マーク形成装置及びマーク形成方法 |
| CN201910263549.2A CN110347015B (zh) | 2018-04-03 | 2019-04-03 | 曝光装置和制造物品的方法 |
| CN202210113165.4A CN114488709B (zh) | 2018-04-03 | 2019-04-03 | 曝光装置和制造物品的方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910263549.2A Division CN110347015B (zh) | 2018-04-03 | 2019-04-03 | 曝光装置和制造物品的方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114488709A CN114488709A (zh) | 2022-05-13 |
| CN114488709B true CN114488709B (zh) | 2024-08-27 |
Family
ID=68057017
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210113165.4A Active CN114488709B (zh) | 2018-04-03 | 2019-04-03 | 曝光装置和制造物品的方法 |
| CN201910263549.2A Active CN110347015B (zh) | 2018-04-03 | 2019-04-03 | 曝光装置和制造物品的方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910263549.2A Active CN110347015B (zh) | 2018-04-03 | 2019-04-03 | 曝光装置和制造物品的方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11187993B2 (enExample) |
| JP (1) | JP6814174B2 (enExample) |
| KR (1) | KR102520399B1 (enExample) |
| CN (2) | CN114488709B (enExample) |
| TW (1) | TWI726294B (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7426845B2 (ja) * | 2020-02-14 | 2024-02-02 | キヤノン株式会社 | 計測方法、露光方法、物品の製造方法、プログラム及び露光装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW587200B (en) * | 2002-10-24 | 2004-05-11 | Taiwan Semiconductor Mfg | Method for improving intrafield overlay accuracy |
| CN101685254A (zh) * | 2008-09-28 | 2010-03-31 | Hoya株式会社 | 光掩模制造方法以及光掩模 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11307449A (ja) * | 1998-02-20 | 1999-11-05 | Canon Inc | 露光装置及びデバイスの製造方法 |
| JP4618859B2 (ja) | 2000-10-10 | 2011-01-26 | 東レエンジニアリング株式会社 | 積層ウエハーのアライメント方法 |
| US6678038B2 (en) | 2001-08-03 | 2004-01-13 | Nikon Corporation | Apparatus and methods for detecting tool-induced shift in microlithography apparatus |
| US6838217B1 (en) | 2002-06-06 | 2005-01-04 | Taiwan Semiconductor Manufacturing Company | Define overlay dummy pattern in mark shielding region to reduce wafer scale error caused by metal deposition |
| US7256865B2 (en) * | 2003-10-24 | 2007-08-14 | Asml Holding N.V. | Methods and apparatuses for applying wafer-alignment marks |
| US7981595B2 (en) * | 2005-03-23 | 2011-07-19 | Asml Netherlands B.V. | Reduced pitch multiple exposure process |
| US7906270B2 (en) * | 2005-03-23 | 2011-03-15 | Asml Netherlands B.V. | Reduced pitch multiple exposure process |
| KR101385428B1 (ko) | 2006-12-15 | 2014-04-14 | 칼 짜이스 에스엠에스 게엠베하 | 캐리어의 기준점에 대하여 캐리어 위의 구조의 위치를 결정하는 방법 및 장치 |
| SG153748A1 (en) * | 2007-12-17 | 2009-07-29 | Asml Holding Nv | Lithographic method and apparatus |
| US20100063764A1 (en) * | 2008-09-10 | 2010-03-11 | Limin Lou | Use of different pairs of overlay layers to check an overlay measurement recipe |
| JP2010267931A (ja) * | 2009-05-18 | 2010-11-25 | Toshiba Corp | パターン形成方法およびパターン設計方法 |
| WO2013031863A1 (ja) * | 2011-09-01 | 2013-03-07 | 旭硝子株式会社 | 反射型マスクブランク、反射型マスクブランクの製造方法、及び反射型マスクブランクの品質管理方法 |
| US9442392B2 (en) * | 2012-12-17 | 2016-09-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Scanner overlay correction system and method |
| US8889434B2 (en) * | 2012-12-17 | 2014-11-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Scanner overlay correction system and method |
| WO2016037003A1 (en) * | 2014-09-03 | 2016-03-10 | Kla-Tencor Corporation | Optimizing the utilization of metrology tools |
| CN105573068B (zh) | 2014-10-10 | 2019-11-05 | 中芯国际集成电路制造(上海)有限公司 | 光刻胶去除方法和光刻工艺的返工方法 |
| EP3447580A1 (en) * | 2017-08-21 | 2019-02-27 | ASML Netherlands B.V. | Method of calibrating focus measurements, measurement method and metrology apparatus, lithographic system and device manufacturing method |
-
2018
- 2018-04-03 JP JP2018071919A patent/JP6814174B2/ja active Active
-
2019
- 2019-03-21 TW TW108109682A patent/TWI726294B/zh active
- 2019-03-29 KR KR1020190036754A patent/KR102520399B1/ko active Active
- 2019-04-01 US US16/371,271 patent/US11187993B2/en active Active
- 2019-04-03 CN CN202210113165.4A patent/CN114488709B/zh active Active
- 2019-04-03 CN CN201910263549.2A patent/CN110347015B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW587200B (en) * | 2002-10-24 | 2004-05-11 | Taiwan Semiconductor Mfg | Method for improving intrafield overlay accuracy |
| CN101685254A (zh) * | 2008-09-28 | 2010-03-31 | Hoya株式会社 | 光掩模制造方法以及光掩模 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190116071A (ko) | 2019-10-14 |
| JP2019184681A (ja) | 2019-10-24 |
| CN114488709A (zh) | 2022-05-13 |
| US11187993B2 (en) | 2021-11-30 |
| US20190302630A1 (en) | 2019-10-03 |
| JP6814174B2 (ja) | 2021-01-13 |
| TWI726294B (zh) | 2021-05-01 |
| KR102520399B1 (ko) | 2023-04-12 |
| CN110347015B (zh) | 2022-02-18 |
| CN110347015A (zh) | 2019-10-18 |
| TW201942685A (zh) | 2019-11-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108073048B (zh) | 曝光装置、曝光方法和物品的制造方法 | |
| KR102396139B1 (ko) | 리소그래피 장치, 리소그래피 방법, 결정 방법, 프로그램 및 물품 제조 방법 | |
| TWI888752B (zh) | 獲得基板上的多個照射區域的陣列的方法、曝光方法、曝光設備、物品的製造方法、非暫態性電腦可讀儲存媒體及資訊處理設備 | |
| TW202238288A (zh) | 檢測裝置、檢測方法、曝光裝置、曝光系統及物品製造方法 | |
| KR102566155B1 (ko) | 패턴 형성 방법, 리소그래피 장치, 및 물품 제조 방법 | |
| CN114488709B (zh) | 曝光装置和制造物品的方法 | |
| US20230185208A1 (en) | Measurement apparatus, lithography apparatus, and article manufacturing method | |
| KR102809336B1 (ko) | 마크 위치 결정 방법, 리소그래피 방법, 물품제조방법, 프로그램 및 리소그래피 장치 | |
| KR20220053492A (ko) | 처리 장치, 계측 장치, 리소그래피 장치, 물품을 제조하는 방법, 모델, 처리 방법, 계측 방법, 생성 방법, 및 생성 장치 | |
| KR20240133590A (ko) | 기판상의 복수의 영역의 배열을 구하는 방법, 노광 방법, 노광 장치, 물품의 제조 방법, 비일시적 컴퓨터 판독 가능 기억매체 및 정보처리장치 | |
| TWI892353B (zh) | 製造半導體元件的方法 | |
| KR20250119414A (ko) | 계측방법, 위치맞춤방법, 처리방법, 처리장치, 물품의 제조방법, 결정방법 및 프로그램 | |
| KR20210001968A (ko) | 패턴 형성 방법 및 물품의 제조 방법 | |
| KR20240157548A (ko) | 노광장치, 노광방법, 및 물품 제조방법 | |
| CN119225122A (zh) | 信息处理装置、信息处理方法、存储介质、曝光方法、基板处理装置以及物品的制造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |