CN114481248A - Processing device and method for localized electrodeposition on silicon surface - Google Patents
Processing device and method for localized electrodeposition on silicon surface Download PDFInfo
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- C25D21/12—Process control or regulation
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- C—CHEMISTRY; METALLURGY
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- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/024—Electroplating of selected surface areas using locally applied electromagnetic radiation, e.g. lasers
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Abstract
The invention discloses a processing device and a processing method for localized electro-deposition on the surface of a silicon wafer, and belongs to the technical field of composite special processing. And (3) processing and removing silicon oxide on the surface of the silicon wafer by controlling a cutter through a computer, and controlling a laser beam to irradiate the silicon wafer to remove a silicon oxide area, so as to realize the localized electrodeposition of metal on the surface of the silicon wafer. According to the invention, the laser is used for irradiating the region of the silicon wafer to be subjected to oxide layer removal, so that the material of the oxide layer is softened, and the efficiency and the precision of the cutter for removing the oxide layer are improved; in addition, the laser has high power density, the temperature of an irradiation area is raised by the heat effect of laser irradiation, the local conductivity of the silicon wafer is effectively improved, the ion diffusion of deposition liquid and the interface electron transfer speed are accelerated, meanwhile, the gas discharge in the deposition process is accelerated by the stirring effect generated by the force effect, the defects of cracks, air holes and the like in a deposition layer are reduced, and the efficiency and the quality of the localized electrodeposition on the surface of the silicon wafer are effectively improved; the lower surface and the side wall of the silicon chip are wrapped by insulating materials, so that the cathode electric field is limited, and the electrodeposition localization is enhanced.
Description
Technical Field
The invention relates to the technical field of composite processing, in particular to a composite processing device and a composite processing method for removing an oxide layer by using a cutter and electrodepositing metal on a silicon wafer locally by laser-assisted electrodeposition, which are suitable for processing and manufacturing a micro circuit on the surface of the silicon wafer.
Background
The electrodeposition technology is based on the electrochemical principle, under the action of a direct current electric field or a pulse electric field, an anode and a cathode form a loop in a certain electrolyte solution, so that metal ions in the solution move to the surface of the cathode to obtain electrons for reduction reaction. The electrodeposition technology is used as a technology for preparing a functional coating on the surface, and has a great development space in the field of manufacturing electrical material coatings on silicon chips. The laser irradiation is introduced into the electrodeposition technology, so that the quality and efficiency of electrodeposition can be improved, particularly, the laser heat effect improves the temperature of the silicon wafer in an irradiation area, the conductivity of the silicon wafer is effectively improved, and the deposition rate is improved in electrodeposition on a silicon wafer substrate, but the shape, the size precision and the localization of an electrodeposited metal coating still need to be improved.
There has been some research at home and abroad on the preparation of functional coatings on silicon wafers, and chinese patent No. CN102575351A discloses a solution and a method for activating the oxidized surface of a substrate, in particular a silicon wafer substrate, so that said surface is subsequently covered with a metal layer deposited by an electroless method. The method can effectively activate the silicon oxide layer on the surface of the silicon wafer to be deposited smoothly, but cannot limit the deposition reaction area, and parts with complicated shapes and high dimensional precision are not easy to process. A journal article on micro-nano electronic technology, namely' selective chemical copper plating on semiconductor silicon by laser induction, proposes that laser-induced chemical deposition is carried out on a semiconductor substrate in aqueous solution, the surface of a silicon wafer which is subjected to activation treatment is stripped by laser, deposition is carried out on the surface which is not irradiated by the laser and is subjected to activation treatment, but the laser stripping is easy to damage the silicon wafer and influences the surface quality.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a processing device and a processing method for localized electrodeposition on a silicon surface, which can effectively solve the problems by utilizing the composite processing of removing an oxide layer by a cutter and locally depositing metal on the silicon wafer by laser-assisted electrodeposition, and effectively improve the deposition localization, efficiency and quality.
The present invention achieves the above-described object by the following technical means.
A method for electrodepositing metal on the surface of a silicon wafer in a localized way is characterized in that a cutter is controlled by a computer to process and remove silicon oxide on the surface of the silicon wafer, and a laser beam is controlled to irradiate the silicon wafer to remove a silicon oxide area, so that the metal is electrodeposited on the surface of the silicon wafer in a localized way.
The scheme comprises the following steps:
drawing a tool motion path model and inputting the tool motion path model into a computer;
clamping a silicon wafer in a liquid storage tank, connecting a tool anode with a positive electrode of a direct current pulse power supply, connecting the silicon wafer with a negative electrode of the direct current pulse power supply, immersing the lower ends of the silicon wafer and the tool anode in a deposition solution, electrifying, forming an electrochemical loop in the deposition solution, starting a pulse laser, irradiating an oxide layer area to be removed on the surface of the silicon wafer by using laser, softening an oxide layer material, and removing silicon oxide on the surface of the silicon wafer by controlling a cutter to realize the localized electrochemical process on the surface of the silicon wafer.
In the scheme, the tool anode is tightly attached to the inner wall of the liquid storage tank and keeps a vertical relation with the silicon wafer.
In the scheme, the liquid level of the deposition liquid is 2-10 mm higher than that of the silicon wafer, and the temperature of the deposition liquid is 15-50 ℃.
In the above scheme, the lower surface and the side wall of the silicon wafer are insulated.
In the scheme, the lower surface and the side wall of the silicon wafer are insulated through the insulating adhesive tape or the hot melt adhesive sheet.
The device of the method for electrodepositing metal on the surface of a silicon chip in a localized mode comprises a laser irradiation system, a processing system and a control system;
the laser irradiation system comprises a pulse laser, a reflector and a focusing lens; the laser is emitted by a pulse laser, the transmission direction is changed by a reflector, the laser is focused by a focusing lens, and the focused laser beam is irradiated on a silicon wafer;
the processing system comprises a direct-current pulse power supply, a liquid storage tank, a silicon chip, a tool anode, an x-y-z three-axis motion platform and a cutter; the cutter is arranged on a working arm controlled by the x-y-z three-axis motion platform; the positive electrode of the direct current pulse power supply is connected with the tool anode, and the negative electrode of the direct current pulse power supply is connected with the silicon wafer; the lower ends of the silicon chip and the tool anode are immersed in the deposition solution, and the silicon chip and the workpiece anode form an electrochemical loop in the deposition solution;
the control system comprises a computer and a motion controller, wherein the computer controls the pulse laser, the direct current pulse power supply and the motion controller; the motion controller controls the x-y-z three-axis motion platform.
In the scheme, the silicon wafer is clamped by the clamping device, wherein the spring-assisted clamping device is adopted on the left side of the clamping device, and the spiral clamping mechanism is adopted on the right side of the clamping device.
In the above scheme, the processing system further comprises an oscilloscope; and the direct current pulse power supply is connected with the oscilloscope.
In the scheme, the pulse laser is a nanosecond pulse laser or a picosecond pulse laser; the voltage of the direct current pulse power supply can be adjusted to 0-20V, the frequency is 0.1 KHz-10 MHz, and the duty ratio is 0-80%.
The invention has the technical advantages and beneficial effects that:
1. according to the invention, the silicon oxide layer is removed by controlling the cutter, and meanwhile, the oxide layer material in the area is softened by using laser, so that the efficiency and the precision of localized removal of the oxide layer are improved, the operation flow is simple, and the processing efficiency is high; the metal deposition of patterned/refined shape or size can be obtained by controlling the movement route of the cutter by a computer; the invention can also control the laser beam to continuously irradiate the silicon wafer to remove the silicon oxide area through the computer control, thereby improving the localization, the efficiency and the quality of the electro-deposition on the surface of the silicon wafer.
2. The removal of the oxide film on the surface of the silicon wafer is carried out in the solution, thereby avoiding the reoxidation in the air.
3. The silicon oxide layer on the surface of the silicon wafer is not removed, so that the surface of the silicon wafer can be protected, laser irradiation damage is prevented, stray deposition is reduced, the cutter is controlled to remove the silicon oxide layer according to a given processing path, the reaction area of electrodeposition can be limited, and the shape and the size of the electrodeposition are effectively controlled.
4. The laser heat effect improves the temperature of the silicon wafer in the irradiation area, so that the local conductivity of the silicon wafer is rapidly increased, the electric field concentration effect in the irradiation area is enhanced, and the localization of electrodeposition is further improved; the heat effect of the laser improves the temperature of an irradiation area, accelerates the ion diffusion of the deposition liquid, the internal charge conduction rate of the silicon wafer and the interface electron transfer speed, and improves the efficiency of localized electrodeposition.
5. The laser force effect generates a stirring effect to accelerate the gas discharge at the interface, reduce the defects of cracks, air holes and the like in a deposition layer and effectively improve the localized deposition quality of the surface of the silicon wafer.
6. According to the invention, the lower surface and the side wall of the silicon wafer are wrapped by insulating materials, so that the cathode electric field is limited, the localization of electrodeposition is enhanced, laser has high power density, the temperature of an irradiation area is raised by the heat effect of laser irradiation, the local conductivity of the silicon wafer is effectively improved, the ion diffusion of deposition liquid and the interface electron transfer speed are accelerated, meanwhile, the stirring effect generated by the force effect accelerates the gas discharge, the defects of cracks, air holes and the like in a deposition layer are reduced, and the efficiency and the quality of the localized electrodeposition on the surface of the silicon wafer are effectively improved. The invention is suitable for the high-efficiency processing and manufacturing of the fine circuit on the surface of the silicon chip.
Drawings
FIG. 1 is a schematic view of a processing system for a processing apparatus for electrodeposition on silicon surfaces;
fig. 2 is a schematic diagram of the combined machining of the cutter machining and the laser-assisted electro-deposition.
The reference numbers are as follows:
1-a computer; 2-a pulsed laser; 3-a mirror; 4-a focusing lens; 5-a motion controller; a 6-x-y-z three-axis motion platform; 7-tool 8-screw clamping device; 9-a liquid storage tank; 10-a silicon wafer; 11-spring assisted clamping means; 12-a deposition solution; 13-a tool anode; a 14-x-y-z three-axis motion platform; 15-a direct current pulse power supply; 16-an oscilloscope; 17-a laser beam; (ii) a 18-silicon oxide film; 19-insulating film.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "axial," "radial," "vertical," "horizontal," "inner," "outer," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present invention and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
With reference to fig. 1, a processing apparatus for electrodeposition on silicon surface comprises a processing system, a laser irradiation system and a motion control system; the processing system comprises a direct-current pulse power supply 15, a liquid storage tank 9, a spiral clamping device 8, a spring auxiliary clamping device 11, a silicon wafer 10, a tool anode 12, an x-y-z three-axis motion platform 6 and an x-y-z three-axis motion platform 13; the liquid storage tank 9 is arranged on an x-y-z three-axis motion platform 14; the positive electrode of the direct current pulse power supply 15 is connected with the tool anode 13, and the negative electrode of the direct current pulse power supply is connected with the silicon wafer 10; the lower ends of the silicon wafer 10 and the tool anode 12 are immersed in the deposition solution, and the silicon wafer 10 and the workpiece anode 13 form an electrochemical loop in the deposition solution; the tool anode 13 is clamped by a working arm of the x-y-z three-axis motion platform 6; the control system comprises a computer 1 and a motion controller 5, wherein the computer 1 controls a pulse laser 2, a direct current pulse power supply 15 and the motion controller 5; the motion controller 5 controls the x-y-z three-axis motion stages 6, 14.
Referring to fig. 1, a computer 1 is connected to a pulse laser 2, a dc pulse power supply 15 and a motion controller 5. The computer 1 can control the laser parameters of the pulse laser 2 and the power parameters of the direct current pulse power supply 15, meanwhile, the computer 1 can run a path execution code, and the motion of the x-y-z three-axis motion platform 6 is controlled by the motion controller 5. The liquid storage tank 9 is installed on an x-y-z triaxial movement platform 14, the silicon chip 10 is clamped at the bottom of the liquid storage tank 9, the tool anode 13 is placed close to the inner wall of the liquid storage tank 9 and keeps vertical close to the silicon chip 10, the anode of the direct current pulse power supply 15 is connected with the tool anode 13, the cathode of the direct current pulse power supply is connected with the silicon chip 10, the oscilloscope 16 is connected with the direct current pulse power supply 14, and current parameters are monitored in real time. The positive electrode of the direct current pulse power supply 15, the tool anode 11, the deposition solution 12, the silicon wafer 10, the direct current pulse power supply 15 and the negative electrode form a loop, so that the electrochemical reaction can be carried out. The laser beam 17 is emitted by the pulse laser 2, changes the transmission direction through the reflector 3, passes through the focusing lens 4 and penetrates through the deposition liquid 12 to be focused on the surface of the silicon wafer 10, and the motion controller 5 controls the motion path of the x-y-z three-axis motion platform 6 to realize deposition of different patterns.
Referring to the attached figure 2, the lower surface and the side wall of a silicon wafer 10 are wrapped by an insulating film 19, the upper surface of the silicon wafer 10 is covered by a silicon oxide film 18, a computer 1 runs a programmed path code, the motion of an x-y-z three-axis motion platform 6 is controlled by a motion controller 5, the x-y-z three-axis motion platform 6 controls the motion of a cutter, the cutter is clamped by a working arm of the x-y-z three-axis motion platform 6, the cutter 7 removes the silicon oxide film 18 on the surface of the silicon wafer 10, so that an electrodeposition reaction only occurs in a silicon oxide removal area, meanwhile, the computer 1 controls a laser beam 17 to irradiate the area of an oxide layer to be removed, so as to soften the material of the oxide layer, improve the removal efficiency and the removal accuracy of the oxide layer, and can also continuously adopt laser to irradiate the silicon oxide film to be removed, accelerate the transfer of charges in an electrochemical loop, and accelerate the cyclic flow updating of a deposition liquid 12, the deposition efficiency is improved.
The specific implementation method of the invention is as follows:
1) writing a control code by using software to ensure that a desired graph is obtained, and paying attention to the adoption of smaller motion acceleration when writing the code to prevent the solution from shaking to influence the processing effect;
2) preparing corresponding deposition liquid 12, wherein the components and the concentration of the deposition liquid 12 are reasonably selected according to the required material of the deposition layer, a small amount of additive is added to improve the performance and the deposition speed of the coating, and a small amount of brightener, leveling agent and the like capable of improving the surface quality of the deposition layer are added;
3) the surface pretreatment is carried out on the silicon chip 10, the lower surface and the side wall of the silicon chip 10 are wrapped by an insulating film 19, and then the silicon chip is clamped in a liquid storage tank and is connected with the negative electrode of a direct current pulse power supply 15. The tool anode 13 is connected with the anode of the direct current pulse power supply 15, and the tool anode 13 is closely attached to the inner wall of the liquid storage tank 9 and keeps a vertical relation with the silicon chip 10. The side wall of the lower surface of the silicon wafer 10 is insulated, so that an electrodeposition reaction area is limited, and the efficiency and the quality of electrodeposition are improved;
4) adding the deposition liquid 12 to enable the liquid level to be 2-10 mm higher than the surface of the silicon wafer 10, if the solution layer is too thin, water splash can be splashed by plasma generated by laser irradiation, and if the solution layer is too thick, energy loss is serious when laser passes through the solution, and the efficiency is low;
5) placing a liquid storage tank 9 on an x-y-z triaxial movement platform 5, adjusting the x-y-z triaxial movement platform 5 to focus laser on a silicon wafer 10 by 0.2-1.5 mm, softening an oxide layer material by using a laser thermal effect, and controlling an x-y-z triaxial movement platform 6 through a movement controller 5 to further control a cutter to remove a silicon oxide film on the surface of the silicon wafer;
6) the laser parameters and the direct current pulse power supply parameters are adjusted through the computer 1, the voltage of the direct current pulse power supply 15 is adjustable in a range of 0-20V, the duty ratio is 0-80%, the frequency is consistent with the laser parameters, the oscilloscope 16 is connected with the direct current pulse power supply 15, the power supply parameters are monitored in real time, and the stability of the power supply in the processing process is guaranteed;
7) starting the pulse laser 2, the direct current pulse power supply 15 and the motion controller 5, and controlling the x-y-z three-axis motion platform 6 through the motion controller 5 to further control the cutter to remove the silicon oxide film on the surface of the silicon wafer while removing the oxide layer area through the laser irradiation zone according to the set motion path;
8) the laser generated by the pulse laser 2 is continuously used for irradiating the silicon oxide film-free area on the surface of the silicon wafer, so that the deposition efficiency and quality are effectively improved;
in the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made in the above embodiments by those of ordinary skill in the art without departing from the principle and spirit of the present invention.
Claims (10)
1. A method for electrodepositing metal on the surface of a silicon wafer in a localized mode is characterized in that a computer (1) controls a laser beam to irradiate a silicon wafer (10) to be subjected to silicon oxide removal area, and simultaneously controls a cutter (7) to process and remove silicon oxide on the surface of the silicon wafer (10), so that metal is electrodeposited on the surface of the silicon wafer (10) in the localized mode.
2. The method of claim 1, wherein the laser irradiation of the silicon wafer (10) during the electrodeposition process is continued to remove the silicon oxide region, further improving the local deposition efficiency and quality.
3. The method of claim 1, comprising the steps of:
drawing a motion path model of the cutter (7) and inputting the motion path model into the computer (1);
the silicon chip (10) is clamped in the liquid storage tank (9), the tool anode (13) is connected with the positive electrode of the direct current pulse power supply (15), the silicon chip (10) is connected with the negative electrode of the direct current pulse power supply (15), the lower ends of the silicon chip (10) and the tool anode (13) are immersed in the deposition liquid (12), after the power is on, an electrochemical loop is formed in the deposition liquid (12), silicon oxide on the surface of the silicon chip (10) is removed by controlling the cutter (7), the pulse laser (2) is started at the same time, and the laser beam (17) is irradiated in a localized mode to complete processing on a deposition part.
4. The method of localized electrodeposition of metal on a silicon wafer surface according to claim 1 wherein the tool anode (13) is placed against the inner wall of the reservoir (9) in a perpendicular relationship to the silicon wafer (10).
5. The method of claim 3, wherein the liquid level of the deposition solution is 2-10 mm higher than that of the silicon wafer (10), and the temperature of the deposition solution (12) is 15-50 ℃.
6. The method of claim 1, wherein the silicon wafer (10) is insulated from the lower surface and sidewalls thereof.
7. The method of claim 6, wherein the lower surface and the sidewall of the silicon wafer (10) are insulated by an insulating tape or a hot-melt adhesive sheet.
8. The apparatus for the method of localized electrodeposition of a metal on a surface of a silicon wafer according to any one of claims 1 to 7, comprising a laser irradiation system, a processing system and a control system;
the laser irradiation system comprises a pulse laser (2), a reflector (3) and a focusing lens (4); laser is emitted by a pulse laser (2), the transmission direction is changed by a reflector (3), the laser is focused by a focusing lens (4), and a focused laser beam (17) is irradiated on a silicon wafer (10);
the processing system comprises a direct-current pulse power supply (15), a liquid storage tank (9), a silicon chip (10), a tool anode (13), an x-y-z three-axis motion platform (6) and a cutter (7); the cutter (7) is arranged on a working arm controlled by the x-y-z three-axis motion platform (6); the positive electrode of the direct current pulse power supply (15) is connected with the tool anode (13), and the negative electrode of the direct current pulse power supply is connected with the silicon wafer (10); the lower ends of the silicon wafer (10) and the tool anode (13) are immersed in the deposition solution, and the silicon wafer (10) and the workpiece anode (13) form an electrochemical loop in the deposition solution;
the control system comprises a computer (1) and a motion controller (5), wherein the computer (1) controls the pulse laser (2), the direct-current pulse power supply (15) and the motion controller (5); the motion controller (5) controls the x-y-z three-axis motion platform (6).
9. The apparatus according to claim 8, wherein the silicon wafer (10) is held by a clamping device, wherein the clamping device employs a spring-assisted clamping device (11) on the left side and a screw clamping mechanism (8) on the right side.
10. The apparatus of claim 8, further comprising an oscilloscope (16); the direct current pulse power supply (15) is connected with the oscilloscope (16); the pulse laser (2) is a nanosecond pulse laser or a picosecond pulse laser; the voltage of the direct current pulse power supply (15) can be adjusted to 0-20V, the frequency is 0.1 KHz-10 MHz, and the duty ratio is 0-80%.
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| CN109913919A (en) * | 2019-02-18 | 2019-06-21 | 江苏大学 | A kind of processing method and device preparing micro-nano two-dimensional structure in workpiece surface |
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| CN202199936U (en) * | 2011-08-25 | 2012-04-25 | 上海市激光技术研究所 | Laser processing device for solar battery front electrode |
| CN109550953A (en) * | 2018-12-06 | 2019-04-02 | 山东大学 | A kind of method that laser lithography-electrospray deposition prepares micro- texture |
| CN109913919A (en) * | 2019-02-18 | 2019-06-21 | 江苏大学 | A kind of processing method and device preparing micro-nano two-dimensional structure in workpiece surface |
| CN109735883A (en) * | 2019-02-20 | 2019-05-10 | 江苏大学 | A kind of device and method of the fine electro-deposition of laser assisted flexibility trailing type tool-electrode |
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