CN113843462B - Method for improving wire cutting efficiency of semiconductor electric discharge machine by using electroless plating process - Google Patents
Method for improving wire cutting efficiency of semiconductor electric discharge machine by using electroless plating process Download PDFInfo
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- CN113843462B CN113843462B CN202111310511.XA CN202111310511A CN113843462B CN 113843462 B CN113843462 B CN 113843462B CN 202111310511 A CN202111310511 A CN 202111310511A CN 113843462 B CN113843462 B CN 113843462B
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- semiconductor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H7/00—Processes or apparatus applicable to both electrical discharge machining and electrochemical machining
- B23H7/02—Wire-cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H11/00—Auxiliary apparatus or details, not otherwise provided for
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1662—Use of incorporated material in the solution or dispersion, e.g. particles, whiskers, wires
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Electrochemistry (AREA)
- Chemically Coating (AREA)
Abstract
The invention relates to a method for improving the wire cutting efficiency of a semiconductor electric spark by using an electroless plating process, which is characterized by comprising the following steps: polishing a semiconductor to be subjected to electric spark cutting, and then ultrasonically cleaning with alcohol; preparing a solution required by electroless plating; placing the cleaned semiconductor into an electroless plating solution for reaction; taking out the semiconductor subjected to chemical plating, and carrying out clamping operation; the plating surface of the semiconductor is connected to a work table as a power feeding surface, and wire-cut electric discharge machining is performed. According to the method for improving the wire cutting efficiency of the semiconductor by utilizing the electroless plating process, provided by the technical scheme, the surface of the semiconductor can be subjected to electroless plating without being subjected to activation treatment; the plating layer is tightly combined with the surface of the semiconductor, so that the contact resistance is effectively reduced; and the semiconductor discharge machining process after the electroless plating treatment is more stable, the machining efficiency is improved by 73% compared with the copper foil power-on, and the machining cost is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor wire-cut electrical discharge machining, in particular to a method for improving the efficiency of semiconductor wire-cut electrical discharge machining by using an electroless plating process.
Background
The semiconductor material has been the most actively used advanced material in the advanced science and technology due to the unique physical and mechanical properties, has wide application prospect in the fields of communication, aerospace, optics and electronics, and is the foundation and core of the modern electronic information society, wherein the most representative semiconductor material is silicon, germanium, gallium arsenide and the like. Silicon is the most important and widely used semiconductor material, known as the foundation of modern information society. At present, more than 90% of semiconductor components and circuits are manufactured by silicon, and the photovoltaic effect of crystalline silicon solar cells is utilized for generating electricity, so that the blowout trend is presented.
The electric discharge machining method is a non-contact machining method without macroscopic cutting force, and utilizes the instantaneous high temperature generated by high-frequency pulse electric discharge between a workpiece and an electrode to locally melt and gasify the workpiece, so that the purpose of removing materials is achieved, and conductive materials with any hardness can be machined. At present, the semiconductor electric spark machining method mainly comprises electric spark wire cutting, electric spark milling, electric spark forming machining and the like. The large-size ultrathin silicon wafer can be directly obtained by utilizing the wire-cut electrical discharge machining technology, and the silicon wafer is not influenced by the crystal orientation of silicon crystals, so that the equipment cost is low and the cutting efficiency is higher.
The discharge current in the electric spark machining directly influences the etching efficiency of workpiece materials, and the conductivity is a main influencing factor of the machining efficiency of the technology. Because semiconductors have special electrical characteristics, the interface contact between the power supply metal (clamp or wire) and the semiconductor can cause high contact resistance, and the conductivity is mainly influenced by the contact resistance and the semiconductor resistivity, and semiconductor materials with larger resistivity can be processed by researching the contact resistance. The method aims at carding and summarizing the related research of the contact resistance in the electric spark machining of the semiconductor silicon, analyzing the reason for the generation of the contact resistance, discussing the influence factors of the contact resistance, summarizing the method for reducing the contact resistance, and providing guidance for the electric spark efficient machining of the semiconductor silicon material with variable resistivity.
Disclosure of Invention
The invention aims to provide a method for improving the wire cutting efficiency of a semiconductor electric spark by using an electroless plating process, which can effectively solve the problems of high contact resistance and low machining efficiency of the traditional power-on mode.
In order to solve the technical problems, the invention adopts the following technical scheme:
a method for improving wire cut electrical discharge machining efficiency of a semiconductor by using an electroless plating process, comprising the steps of:
s1, polishing a semiconductor to be subjected to electric spark cutting, and then ultrasonically cleaning with alcohol;
s2, preparing a solution required by chemical plating;
s3, placing the cleaned semiconductor into an electroless plating solution for reaction;
s4, taking out the semiconductor subjected to chemical plating, and carrying out clamping operation;
and S5, connecting the plating surface of the semiconductor serving as a power feeding surface with a workbench, and performing wire-cut electric discharge machining.
Wherein, the solution required by the chemical plating comprises a cylinder opening agent, an additive and sodium hydroxide solid particles; and the mass ratio of the cylinder opening agent to the additive to the sodium hydroxide solid particles is 100:30:3.
The cylinder opening agent comprises an accelerator, a complexing agent and a stabilizer, and the color of the cylinder opening agent is light yellow.
Wherein the additive comprises a reducing agent and a solution containing copper ions, and the color of the additive is blue.
The reaction condition of the step S3 is water bath heating; and the water bath heating temperature is 40-60 ℃ and the time is 40-60 min.
In addition, the method for preparing the electroless plating solution comprises the following steps: firstly pouring the jar opener into a container, then pouring the additive into the container, stirring, finally adding sodium hydroxide solid particles, adjusting the pH of the solution to be strong alkaline, and stirring to obtain the product.
Wherein the semiconductor is a silicon crystal in the form of a sheet or a rod.
According to the method for improving the wire cutting efficiency of the semiconductor by utilizing the chemical plating process, the semiconductor can be plated with the conductive layer without activation treatment, the plating layer is compact in combination with the surface of the semiconductor, difficult to permeate water and good in conductivity, the contact resistance during wire cutting treatment of the electric spark is small, the machining efficiency of the power feeding mode can be greatly improved, the plating layer is uniform, and the machining stability is guaranteed.
Drawings
FIG. 1 is a schematic diagram of an electroless plating test of the present invention;
FIG. 2 shows the effect of different surface treatments on the cutting speed;
FIG. 3 shows the effect of different surface treatments on the voltammetric properties.
Detailed Description
The present invention will be specifically described with reference to examples below in order to make the objects and advantages of the present invention more apparent. It should be understood that the following text is intended to describe only one or more specific embodiments of the invention and does not limit the scope of the invention strictly as claimed.
The present embodiment describes the present invention by taking a silicon crystal as an example, and a method for improving the wire-cut efficiency of a semiconductor wire-cut electric discharge machine by using an electroless plating process, comprising the steps of:
(1) Placing the silicon crystal in an alcohol cup for ultrasonic cleaning for 5min;
(2) Polishing the surface of the silicon crystal to be chemically plated;
(3) Preparing a solution for electroless plating: firstly adding 100 percent of cylinder opening agent, then adding 30ml of additive, and uniformly stirring; wherein the cylinder opening agent comprises glycolic acid, triethanolamine, dimercaptobenzothiazole MBT and alum pentoxide, and the final color is light yellow; the additive comprises copper and formaldehyde, and the copper ions and the formaldehyde content in the solution are mainly controlled by the content of the additive, so that the solution is blue.
(4) Finally, adding 3g of sodium hydroxide solid particles, uniformly stirring, and regulating the pH to 12;
(5) Placing silicon crystal in solution, heating in 50deg.C water bath for about 40min, and electroless plating according to the principle shown in figure 1;
(6) Taking out the silicon, and ultrasonically cleaning for 5 minutes;
(7) The surface of the silicon plating layer is used as a power feeding surface and is connected with a workbench for wire-cut electric discharge machining.
The effect of three different surface treatments on cutting speed of copper foil feeding, brushing copper paste plating, electroless copper plating of this example is recorded in fig. 2. As can be seen from fig. 2, the cutting efficiency after the electroless plating surface treatment is significantly higher than that of the brush plating copper paste and the copper foil, and the electroless copper plating processing efficiency is improved by 73% compared with the copper foil.
FIG. 3 is a graph of volt-ampere characteristics for three modes of charging, showing that the slope of electroless copper plating is higher than for the other two modes of charging; the process method can effectively reduce the potential barrier of the power-in contact to reduce the resistance and improve the discharge current.
In addition, the chemical plating method is simple and convenient, the silicon surface can be subjected to chemical plating without activation treatment, the gap between the plating layer and the substrate is about 0.75 mu m, the combination between the plating layer and the semiconductor surface is compact, and water seepage is not easy to occur.
While the embodiments of the present invention have been described in detail with reference to the drawings, the present invention is not limited to the above embodiments, and it will be apparent to those skilled in the art that various equivalent changes and substitutions can be made therein without departing from the principles of the present invention, and such equivalent changes and substitutions should also be considered to be within the scope of the present invention.
Claims (4)
1. A method for improving the wire cutting efficiency of a semiconductor electric discharge machine by using an electroless plating process is characterized by comprising the following steps:
s1, polishing a semiconductor to be subjected to electric spark cutting, and then ultrasonically cleaning with alcohol;
s2, preparing a solution required by chemical plating, wherein the solution required by chemical plating comprises a cylinder opening agent, an additive and sodium hydroxide solid particles, and the mass ratio of the cylinder opening agent to the additive to the sodium hydroxide solid particles is 100-150:20-30:3; the cylinder opening agent comprises glycolic acid, triethanolamine, dimercaptobenzothiazole MBT and alum pentoxide, and the final color is light yellow; the additive comprises copper and formaldehyde, and the additive is blue in color;
s3, placing the cleaned semiconductor into an electroless plating solution for reaction;
s4, taking out the semiconductor subjected to chemical plating, and carrying out clamping operation;
and S5, connecting the plating surface of the semiconductor serving as a power feeding surface with a workbench, and performing wire-cut electric discharge machining.
2. The method for improving wire-cut electrical discharge machining efficiency of a semiconductor using an electroless plating process as claimed in claim 1, wherein the electroless plating solution is prepared by: firstly pouring the jar opener into a container, then pouring the additive into the container, stirring, finally adding sodium hydroxide solid particles, adjusting the pH of the solution to be strong alkaline, and stirring to obtain the product.
3. The method for improving wire-cut electrical discharge machining efficiency of semiconductors by using an electroless plating process as recited in claim 1, wherein: the semiconductor is a silicon crystal in the form of a sheet or a rod.
4. The method for improving wire-cut electrical discharge machining efficiency of semiconductors by using an electroless plating process as recited in claim 1, wherein: the reaction condition of the step S3 is water bath heating; and the water bath heating temperature is 40-60 ℃ and the time is 40-60 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111310511.XA CN113843462B (en) | 2021-11-05 | 2021-11-05 | Method for improving wire cutting efficiency of semiconductor electric discharge machine by using electroless plating process |
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| CN202111310511.XA CN113843462B (en) | 2021-11-05 | 2021-11-05 | Method for improving wire cutting efficiency of semiconductor electric discharge machine by using electroless plating process |
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| CN113843462B true CN113843462B (en) | 2023-09-26 |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1177441A (en) * | 1997-09-05 | 1999-03-23 | Sodick Co Ltd | Electric discharge machining method of monocrystal silicon |
| CN1390894A (en) * | 2002-06-27 | 2003-01-15 | 惠州市富淇化工有限公司 | Electrically conductive paint for internal surface of battery shell and its preparing process |
| CN103624349A (en) * | 2013-09-02 | 2014-03-12 | 黄山市恒悦电子有限公司 | Wire electrical discharge machining method for silicon wafers without surface metal coating |
| CN103920944A (en) * | 2014-03-26 | 2014-07-16 | 中国工程物理研究院激光聚变研究中心 | Electric spark forming and processing method for semiconductor boron |
| CN110760905A (en) * | 2019-11-28 | 2020-02-07 | 汕头市铠嘉模具有限公司 | Application of alkaline cyanide-free copper plating process in gravure industry |
| CN112301386A (en) * | 2019-08-02 | 2021-02-02 | 丹阳市华美可化工有限公司 | Non-dye type environment-friendly bright acidic copper plating additive and application thereof in preparation of plating solution |
| CN113549961A (en) * | 2021-07-26 | 2021-10-26 | 广州鸿葳科技股份有限公司 | Cyanide-free phosphorus-free nitrogen-free monovalent copper plating solution and preparation method and application thereof |
-
2021
- 2021-11-05 CN CN202111310511.XA patent/CN113843462B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1177441A (en) * | 1997-09-05 | 1999-03-23 | Sodick Co Ltd | Electric discharge machining method of monocrystal silicon |
| CN1390894A (en) * | 2002-06-27 | 2003-01-15 | 惠州市富淇化工有限公司 | Electrically conductive paint for internal surface of battery shell and its preparing process |
| CN103624349A (en) * | 2013-09-02 | 2014-03-12 | 黄山市恒悦电子有限公司 | Wire electrical discharge machining method for silicon wafers without surface metal coating |
| CN103920944A (en) * | 2014-03-26 | 2014-07-16 | 中国工程物理研究院激光聚变研究中心 | Electric spark forming and processing method for semiconductor boron |
| CN112301386A (en) * | 2019-08-02 | 2021-02-02 | 丹阳市华美可化工有限公司 | Non-dye type environment-friendly bright acidic copper plating additive and application thereof in preparation of plating solution |
| CN110760905A (en) * | 2019-11-28 | 2020-02-07 | 汕头市铠嘉模具有限公司 | Application of alkaline cyanide-free copper plating process in gravure industry |
| CN113549961A (en) * | 2021-07-26 | 2021-10-26 | 广州鸿葳科技股份有限公司 | Cyanide-free phosphorus-free nitrogen-free monovalent copper plating solution and preparation method and application thereof |
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