CN114481108A - Copper deposition process pretreatment method and chip packaging process - Google Patents
Copper deposition process pretreatment method and chip packaging process Download PDFInfo
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- CN114481108A CN114481108A CN202210059202.8A CN202210059202A CN114481108A CN 114481108 A CN114481108 A CN 114481108A CN 202210059202 A CN202210059202 A CN 202210059202A CN 114481108 A CN114481108 A CN 114481108A
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- deposition process
- copper deposition
- pretreatment method
- stainless steel
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- 239000010949 copper Substances 0.000 title claims abstract description 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 37
- 238000005137 deposition process Methods 0.000 title claims abstract description 29
- 238000002203 pretreatment Methods 0.000 title claims abstract description 22
- 238000012858 packaging process Methods 0.000 title claims abstract description 14
- 239000000126 substance Substances 0.000 claims abstract description 26
- 238000005530 etching Methods 0.000 claims abstract description 24
- 239000010935 stainless steel Substances 0.000 claims abstract description 19
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 9
- 238000005406 washing Methods 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000007788 liquid Substances 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims abstract description 6
- 238000006073 displacement reaction Methods 0.000 claims abstract description 6
- 239000003814 drug Substances 0.000 claims abstract description 6
- 239000012429 reaction media Substances 0.000 claims abstract description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 9
- 239000011259 mixed solution Substances 0.000 claims description 8
- 238000005554 pickling Methods 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 230000002378 acidificating effect Effects 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims description 3
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims description 3
- MPTQRFCYZCXJFQ-UHFFFAOYSA-L copper(II) chloride dihydrate Chemical compound O.O.[Cl-].[Cl-].[Cu+2] MPTQRFCYZCXJFQ-UHFFFAOYSA-L 0.000 claims description 3
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 claims description 3
- 239000003929 acidic solution Substances 0.000 claims 1
- 229910000831 Steel Inorganic materials 0.000 abstract description 10
- 239000010959 steel Substances 0.000 abstract description 10
- 230000003746 surface roughness Effects 0.000 abstract description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 238000006479 redox reaction Methods 0.000 description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 3
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229910021592 Copper(II) chloride Inorganic materials 0.000 description 2
- 229910021577 Iron(II) chloride Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 241000784732 Lycaena phlaeas Species 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910001448 ferrous ion Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/54—Contact plating, i.e. electroless electrochemical plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F17/00—Multi-step processes for surface treatment of metallic material involving at least one process provided for in class C23 and at least one process covered by subclass C21D or C22F or class C25
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/08—Iron or steel
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
- C25D5/36—Pretreatment of metallic surfaces to be electroplated of iron or steel
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Electrochemistry (AREA)
- ing And Chemical Polishing (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
Abstract
The invention discloses a copper deposition process pretreatment method and a chip packaging process, which comprise the following steps: preparing a stainless steel plate adopted in a chip packaging process as a base material; step two: arranging at least one group of chemical water tanks in an etching production line before a copper deposition process; step three: adding mixed liquor into a chemical liquid medicine tank, wherein the mixed liquor firstly participates in a reaction with an oxide film on the surface of stainless steel to remove the oxide film, and then participates in a chemical displacement reaction to form a reaction medium of a Cu simple substance. The pretreatment method of the copper deposition process has the following advantages: the method has the advantages that the surface roughness of the steel plate can be freely controlled by adopting rapid etching and chemical washing and chemical treatment, the method is efficient and simple, and the working labor intensity is greatly reduced.
Description
Technical Field
The invention belongs to the technical field of semiconductor packaging processes, and particularly relates to a copper deposition process pretreatment method and a chip packaging process.
Background
At present, a common copper deposition process is used for a PCB substrate, and a layer of chemical copper with a thickness of about 1um is deposited on a drilled non-conductive hole wall base material by chemical deposition to be used as a base for subsequent electroplating. I have a special process, the used base material is a stainless steel plate, and a copper sheet falls off in the subsequent process flow to pollute the tank body due to poor deposition binding force of a passivated film on the surface of the stainless steel plate and chemical copper. The common treatment methods have respective technical defects: (1) a Plasma cleaning machine is used for increasing the bonding wetting area, but the existing carrying platform of the machine needs to be customized again, and the steel plate is easy to burn and deform at high temperature in the cavity; (2) the glass etching requires a long immersion process and is time-consuming and energy-consuming.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a pretreatment method of a copper deposition process and a chip packaging process. The method is efficient and simple, and the working labor intensity is greatly reduced.
In order to achieve the purpose, the specific technical scheme of the copper deposition process pretreatment method and the chip packaging process is as follows:
a copper deposition process pretreatment method comprises the following steps;
the method comprises the following steps: preparing a stainless steel plate adopted in a chip packaging process as a base material;
step two: arranging at least one group of chemical water tanks in an etching production line before a copper deposition process;
step three: adding mixed liquor into a chemical liquid medicine tank, wherein the mixed liquor firstly participates in a reaction with an oxide film on the surface of stainless steel to remove the oxide film, and then participates in a chemical displacement reaction to form a reaction medium of a Cu simple substance.
Further, the liquid medicine tank is added with Cu2+、H+The acidic ion mixed solution of (2).
Further, the acidic ion mixed solution added in the etching production line is copper chloride dihydrate (CuCl)2·2H2O), hydrochloric acid (HCl).
Further, hydrogen peroxide H is added into the acidic ion mixed solution2O2。
Further, a fourth step is included after the third step, wherein the fourth step includes washing and drying the treated stainless steel material.
Further, the method can be used for preparing a novel materialThe stainless steel plate is washed and dried and then needs to pass through an acid cleaning production line, and low-concentration H is arranged in the acid cleaning production line+The acid solution of (a) is,
further, the acid solution of the low concentration H + provided in the acid washing line is a low concentration sulfuric acid solution.
Further, the stainless steel after passing through the acid cleaning production line is subjected to secondary water cleaning and drying and is reserved before the copper deposition process.
Further, the amount of etching of the stainless steel plate at the linear speed was about 3 μm using 5000mm/min of the steel plate.
A chip packaging process comprises the copper deposition process pretreatment method.
The pretreatment method of the copper deposition process has the following advantages: the control of the surface roughness (etching depth) of the steel plate can be freely realized by adopting rapid etching and chemical washing and chemical treatment. The method is efficient and simple, and the working labor intensity is greatly reduced in the actual production.
Drawings
FIG. 1 is a schematic diagram of an external view before etching according to the present invention;
FIG. 2 is an appearance diagram of the present invention after etching and pickling.
Detailed Description
In order to better understand the purpose, structure and function of the present invention, the pretreatment method of the copper deposition process and the chip packaging process of the present invention are further described in detail with reference to fig. 1-2.
The technical scheme adopted by the invention for realizing the purpose is mainly to destroy ferric iron on the surface oxide film and quickly clean the ferric iron by using an acid etching machine; on the other hand, the remaining copper produced by the redox reaction on the surface of the steel sheet is removed and subjected to acid pickling (dilute sulfuric acid) once.
A copper deposition process pretreatment method comprises the following steps;
the method comprises the following steps: preparing a stainless steel plate adopted in a chip packaging process as a base material;
step two: arranging at least one group of chemical water tanks in an etching production line before a copper deposition process;
step three: adding mixed liquor into a chemical liquid medicine tank, wherein the mixed liquor firstly participates in a reaction with an oxide film on the surface of stainless steel to remove the oxide film, and then participates in a chemical displacement reaction to form a reaction medium of a Cu simple substance.
First, a chemical mixed solution tank is added into an etching line and is made of copper chloride dihydrate (CuCl)2·2H2O), hydrochloric acid (HCl) and hydrogen peroxide (H)2O2) The mixed solution of (1). When the stainless steel plate passes through the etching line liquid medicine tank,
due to Cu2+Is significantly higher than H+Electric potential, so Fe is first mixed with CuCl2A displacement reaction occurs:
Fe+CuCl2=FeCl2+Cu↓
metals that are listed in the head of the metal activity list can displace metals that are listed in the back from their compounds, with greater displacement capabilities at greater distances. Since the more backward, the higher the potential of the metal ion, the stronger the oxidizing ability.
And (3) carrying out oxidation-reduction reaction with hydrochloric acid:
Fe+HCl=FeCl2+H2
in the above three reactions, Fe is used as a reducing agent, and Fe is used as3+ 、Cu2+、 H+When the same reducing agent reacts with different oxidizing agents, the sequence is determined by the oxidizing strength of the oxidizing agents, and the reducing agent reacts with the substance with the strongest oxidizing property first and then reacts with the second strongest oxidizing agent, namely Fe and Fe3+First taking part in oxidation-reduction reaction, Fe and Cu2+Then takes part in oxidation-reduction reaction, Fe is finally reacted with H+Participate in oxidation-reduction reaction.
The etching is whole plate processing, and in order to ensure the uniformity of the etching, the steel plate etching amount is obtained by experimentally measuring the steel plate etching amount at different linear speeds, wherein the steel plate etching amount is about 3 microns at 5000mm/min, and the speed is the selection which does not influence the subsequent process flow at most.
After the steel plate is washed and dried by the subsequent water of the etching line, a little copper and copper oxide remain on the surface, therefore, the copper-copper alloy etching line is used for removing the copper and the copper oxideThe copper oxide needs to be removed again by the pickling line. The chemical liquid added in the pickling line is low-concentration sulfuric acid, firstly iron and copper oxide are simultaneously mixed with dilute sulfuric acid H2SO4The copper sulfate (or ferrous ions and copper ions) is generated by the reaction, and the copper is washed away in the washing overflow washing section, so that the combination effect of the steel plate coming out of the drying section and the copper deposition is greatly improved.
It is to be understood that the present invention has been described with reference to certain embodiments, and that various changes in the features and embodiments, or equivalent substitutions may be made therein by those skilled in the art without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (10)
1. A pretreatment method for a copper deposition process is characterized by comprising the following steps,
the method comprises the following steps: preparing a stainless steel plate adopted in a chip packaging process as a base material;
step two: arranging at least one group of chemical water tanks in an etching production line before a copper deposition process;
step three: adding mixed liquor into a chemical liquid medicine tank, wherein the mixed liquor firstly participates in a reaction with an oxide film on the surface of stainless steel to remove the oxide film, and then participates in a chemical displacement reaction to form a reaction medium of a Cu simple substance.
2. The pretreatment method for copper deposition process according to claim 1, wherein Cu is added into the chemical solution tank2 +、H+The acidic ion mixed solution of (2).
3. The pretreatment method for copper deposition process according to claim 2, wherein the acidic ions added in the etching line are mixed with each otherThe mixed solution is copper chloride dihydrate (CuCl)2·2H2O), hydrochloric acid (HCl).
4. The pretreatment method of copper deposition process according to claim 2, wherein hydrogen peroxide H is further added to the acidic ion mixed solution2O2。
5. The pretreatment method of the copper deposition process according to claim 2, further comprising a fourth step after the third step, wherein the fourth step comprises washing and drying the stainless steel after the treatment.
6. The pretreatment method for copper deposition process according to claim 5, wherein the stainless steel plate is further subjected to a pickling line after being washed with water and dried, and the pickling line is provided with low-concentration H+An acidic solution of (a).
7. The pretreatment method for copper deposition process according to claim 6, wherein the low concentration of H is provided in the pickling line+The acid solution of (2) is a low-concentration sulfuric acid solution.
8. The pretreatment method of the copper deposition process according to claim 7, wherein the stainless steel material after passing through the pickling line is subjected to secondary water washing and drying for standby before the copper deposition process.
9. The pretreatment method of copper deposition process according to claim 1, wherein the etching amount of the stainless steel plate at linear speed is about 3 μm at 5000 mm/min.
10. A chip packaging process, characterized by comprising the copper deposition process pretreatment method of any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210059202.8A CN114481108A (en) | 2022-01-19 | 2022-01-19 | Copper deposition process pretreatment method and chip packaging process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210059202.8A CN114481108A (en) | 2022-01-19 | 2022-01-19 | Copper deposition process pretreatment method and chip packaging process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114481108A true CN114481108A (en) | 2022-05-13 |
Family
ID=81472406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210059202.8A Pending CN114481108A (en) | 2022-01-19 | 2022-01-19 | Copper deposition process pretreatment method and chip packaging process |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008266697A (en) * | 2007-04-18 | 2008-11-06 | Jfe Steel Kk | Pickling method and manufacturing method for stainless steel material |
| KR20110107948A (en) * | 2010-03-26 | 2011-10-05 | (주)알오호일 | Manufacturing method of flexible printed circuit board using stainless steel foil and the flexible printed circuit board therefrom |
| CN102330099A (en) * | 2011-09-09 | 2012-01-25 | 北京星航机电设备厂 | Stainless steel pickling inhibitor |
| CN104233302A (en) * | 2014-09-15 | 2014-12-24 | 南通万德科技有限公司 | Etching liquid and application thereof |
| CN107747096A (en) * | 2017-10-27 | 2018-03-02 | 东莞市慧泽凌化工科技有限公司 | A kind of method of stainless steel surfaces roughening treatment |
| CN109680279A (en) * | 2019-02-28 | 2019-04-26 | 中国石油大学(华东) | A method of high-temperature resistant anti-corrosive scale inhibition coating is prepared in oil pipe steel surface |
| CN111321436A (en) * | 2020-03-09 | 2020-06-23 | 张志梁 | Cyanide-free copper plating solution assistant and copper plating solution |
| CN113906161A (en) * | 2019-06-11 | 2022-01-07 | 三菱瓦斯化学株式会社 | Aqueous composition, method for roughening surface of stainless steel using same, roughened stainless steel, and method for producing same |
-
2022
- 2022-01-19 CN CN202210059202.8A patent/CN114481108A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2008266697A (en) * | 2007-04-18 | 2008-11-06 | Jfe Steel Kk | Pickling method and manufacturing method for stainless steel material |
| KR20110107948A (en) * | 2010-03-26 | 2011-10-05 | (주)알오호일 | Manufacturing method of flexible printed circuit board using stainless steel foil and the flexible printed circuit board therefrom |
| CN102330099A (en) * | 2011-09-09 | 2012-01-25 | 北京星航机电设备厂 | Stainless steel pickling inhibitor |
| CN104233302A (en) * | 2014-09-15 | 2014-12-24 | 南通万德科技有限公司 | Etching liquid and application thereof |
| CN107747096A (en) * | 2017-10-27 | 2018-03-02 | 东莞市慧泽凌化工科技有限公司 | A kind of method of stainless steel surfaces roughening treatment |
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| CN111321436A (en) * | 2020-03-09 | 2020-06-23 | 张志梁 | Cyanide-free copper plating solution assistant and copper plating solution |
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