CN114481108A - Copper deposition process pretreatment method and chip packaging process - Google Patents

Copper deposition process pretreatment method and chip packaging process Download PDF

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Publication number
CN114481108A
CN114481108A CN202210059202.8A CN202210059202A CN114481108A CN 114481108 A CN114481108 A CN 114481108A CN 202210059202 A CN202210059202 A CN 202210059202A CN 114481108 A CN114481108 A CN 114481108A
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deposition process
copper deposition
pretreatment method
stainless steel
chemical
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CN202210059202.8A
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CN114481108B (en
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魏厚韬
操守杰
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Hefei Silicon Microelectronics Technology Co ltd
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Hefei Silicon Microelectronics Technology Co ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/54Contact plating, i.e. electroless electrochemical plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/28Acidic compositions for etching iron group metals
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F17/00Multi-step processes for surface treatment of metallic material involving at least one process provided for in class C23 and at least one process covered by subclass C21D or C22F or class C25
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23GCLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/08Iron or steel
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34Pretreatment of metallic surfaces to be electroplated
    • C25D5/36Pretreatment of metallic surfaces to be electroplated of iron or steel

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)

Abstract

The invention discloses a copper deposition process pretreatment method and a chip packaging process, which comprise the following steps: preparing a stainless steel plate adopted in a chip packaging process as a base material; step two: arranging at least one group of chemical water tanks in an etching production line before a copper deposition process; step three: adding mixed liquor into a chemical liquid medicine tank, wherein the mixed liquor firstly participates in a reaction with an oxide film on the surface of stainless steel to remove the oxide film, and then participates in a chemical displacement reaction to form a reaction medium of a Cu simple substance. The pretreatment method of the copper deposition process has the following advantages: the method has the advantages that the surface roughness of the steel plate can be freely controlled by adopting rapid etching and chemical washing and chemical treatment, the method is efficient and simple, and the working labor intensity is greatly reduced.

Description

Copper deposition process pretreatment method and chip packaging process
Technical Field
The invention belongs to the technical field of semiconductor packaging processes, and particularly relates to a copper deposition process pretreatment method and a chip packaging process.
Background
At present, a common copper deposition process is used for a PCB substrate, and a layer of chemical copper with a thickness of about 1um is deposited on a drilled non-conductive hole wall base material by chemical deposition to be used as a base for subsequent electroplating. I have a special process, the used base material is a stainless steel plate, and a copper sheet falls off in the subsequent process flow to pollute the tank body due to poor deposition binding force of a passivated film on the surface of the stainless steel plate and chemical copper. The common treatment methods have respective technical defects: (1) a Plasma cleaning machine is used for increasing the bonding wetting area, but the existing carrying platform of the machine needs to be customized again, and the steel plate is easy to burn and deform at high temperature in the cavity; (2) the glass etching requires a long immersion process and is time-consuming and energy-consuming.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a pretreatment method of a copper deposition process and a chip packaging process. The method is efficient and simple, and the working labor intensity is greatly reduced.
In order to achieve the purpose, the specific technical scheme of the copper deposition process pretreatment method and the chip packaging process is as follows:
a copper deposition process pretreatment method comprises the following steps;
the method comprises the following steps: preparing a stainless steel plate adopted in a chip packaging process as a base material;
step two: arranging at least one group of chemical water tanks in an etching production line before a copper deposition process;
step three: adding mixed liquor into a chemical liquid medicine tank, wherein the mixed liquor firstly participates in a reaction with an oxide film on the surface of stainless steel to remove the oxide film, and then participates in a chemical displacement reaction to form a reaction medium of a Cu simple substance.
Further, the liquid medicine tank is added with Cu2+、H+The acidic ion mixed solution of (2).
Further, the acidic ion mixed solution added in the etching production line is copper chloride dihydrate (CuCl)2·2H2O), hydrochloric acid (HCl).
Further, hydrogen peroxide H is added into the acidic ion mixed solution2O2
Further, a fourth step is included after the third step, wherein the fourth step includes washing and drying the treated stainless steel material.
Further, the method can be used for preparing a novel materialThe stainless steel plate is washed and dried and then needs to pass through an acid cleaning production line, and low-concentration H is arranged in the acid cleaning production line+The acid solution of (a) is,
further, the acid solution of the low concentration H + provided in the acid washing line is a low concentration sulfuric acid solution.
Further, the stainless steel after passing through the acid cleaning production line is subjected to secondary water cleaning and drying and is reserved before the copper deposition process.
Further, the amount of etching of the stainless steel plate at the linear speed was about 3 μm using 5000mm/min of the steel plate.
A chip packaging process comprises the copper deposition process pretreatment method.
The pretreatment method of the copper deposition process has the following advantages: the control of the surface roughness (etching depth) of the steel plate can be freely realized by adopting rapid etching and chemical washing and chemical treatment. The method is efficient and simple, and the working labor intensity is greatly reduced in the actual production.
Drawings
FIG. 1 is a schematic diagram of an external view before etching according to the present invention;
FIG. 2 is an appearance diagram of the present invention after etching and pickling.
Detailed Description
In order to better understand the purpose, structure and function of the present invention, the pretreatment method of the copper deposition process and the chip packaging process of the present invention are further described in detail with reference to fig. 1-2.
The technical scheme adopted by the invention for realizing the purpose is mainly to destroy ferric iron on the surface oxide film and quickly clean the ferric iron by using an acid etching machine; on the other hand, the remaining copper produced by the redox reaction on the surface of the steel sheet is removed and subjected to acid pickling (dilute sulfuric acid) once.
A copper deposition process pretreatment method comprises the following steps;
the method comprises the following steps: preparing a stainless steel plate adopted in a chip packaging process as a base material;
step two: arranging at least one group of chemical water tanks in an etching production line before a copper deposition process;
step three: adding mixed liquor into a chemical liquid medicine tank, wherein the mixed liquor firstly participates in a reaction with an oxide film on the surface of stainless steel to remove the oxide film, and then participates in a chemical displacement reaction to form a reaction medium of a Cu simple substance.
First, a chemical mixed solution tank is added into an etching line and is made of copper chloride dihydrate (CuCl)2·2H2O), hydrochloric acid (HCl) and hydrogen peroxide (H)2O2) The mixed solution of (1). When the stainless steel plate passes through the etching line liquid medicine tank,
due to Cu2+Is significantly higher than H+Electric potential, so Fe is first mixed with CuCl2A displacement reaction occurs:
Fe+CuCl2=FeCl2+Cu↓
metals that are listed in the head of the metal activity list can displace metals that are listed in the back from their compounds, with greater displacement capabilities at greater distances. Since the more backward, the higher the potential of the metal ion, the stronger the oxidizing ability.
And (3) carrying out oxidation-reduction reaction with hydrochloric acid:
Fe+HCl=FeCl2+H2
in the above three reactions, Fe is used as a reducing agent, and Fe is used as3+ 、Cu2+、 H+When the same reducing agent reacts with different oxidizing agents, the sequence is determined by the oxidizing strength of the oxidizing agents, and the reducing agent reacts with the substance with the strongest oxidizing property first and then reacts with the second strongest oxidizing agent, namely Fe and Fe3+First taking part in oxidation-reduction reaction, Fe and Cu2+Then takes part in oxidation-reduction reaction, Fe is finally reacted with H+Participate in oxidation-reduction reaction.
The etching is whole plate processing, and in order to ensure the uniformity of the etching, the steel plate etching amount is obtained by experimentally measuring the steel plate etching amount at different linear speeds, wherein the steel plate etching amount is about 3 microns at 5000mm/min, and the speed is the selection which does not influence the subsequent process flow at most.
After the steel plate is washed and dried by the subsequent water of the etching line, a little copper and copper oxide remain on the surface, therefore, the copper-copper alloy etching line is used for removing the copper and the copper oxideThe copper oxide needs to be removed again by the pickling line. The chemical liquid added in the pickling line is low-concentration sulfuric acid, firstly iron and copper oxide are simultaneously mixed with dilute sulfuric acid H2SO4The copper sulfate (or ferrous ions and copper ions) is generated by the reaction, and the copper is washed away in the washing overflow washing section, so that the combination effect of the steel plate coming out of the drying section and the copper deposition is greatly improved.
It is to be understood that the present invention has been described with reference to certain embodiments, and that various changes in the features and embodiments, or equivalent substitutions may be made therein by those skilled in the art without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.

Claims (10)

1. A pretreatment method for a copper deposition process is characterized by comprising the following steps,
the method comprises the following steps: preparing a stainless steel plate adopted in a chip packaging process as a base material;
step two: arranging at least one group of chemical water tanks in an etching production line before a copper deposition process;
step three: adding mixed liquor into a chemical liquid medicine tank, wherein the mixed liquor firstly participates in a reaction with an oxide film on the surface of stainless steel to remove the oxide film, and then participates in a chemical displacement reaction to form a reaction medium of a Cu simple substance.
2. The pretreatment method for copper deposition process according to claim 1, wherein Cu is added into the chemical solution tank2 +、H+The acidic ion mixed solution of (2).
3. The pretreatment method for copper deposition process according to claim 2, wherein the acidic ions added in the etching line are mixed with each otherThe mixed solution is copper chloride dihydrate (CuCl)2·2H2O), hydrochloric acid (HCl).
4. The pretreatment method of copper deposition process according to claim 2, wherein hydrogen peroxide H is further added to the acidic ion mixed solution2O2
5. The pretreatment method of the copper deposition process according to claim 2, further comprising a fourth step after the third step, wherein the fourth step comprises washing and drying the stainless steel after the treatment.
6. The pretreatment method for copper deposition process according to claim 5, wherein the stainless steel plate is further subjected to a pickling line after being washed with water and dried, and the pickling line is provided with low-concentration H+An acidic solution of (a).
7. The pretreatment method for copper deposition process according to claim 6, wherein the low concentration of H is provided in the pickling line+The acid solution of (2) is a low-concentration sulfuric acid solution.
8. The pretreatment method of the copper deposition process according to claim 7, wherein the stainless steel material after passing through the pickling line is subjected to secondary water washing and drying for standby before the copper deposition process.
9. The pretreatment method of copper deposition process according to claim 1, wherein the etching amount of the stainless steel plate at linear speed is about 3 μm at 5000 mm/min.
10. A chip packaging process, characterized by comprising the copper deposition process pretreatment method of any one of claims 1 to 9.
CN202210059202.8A 2022-01-19 2022-01-19 Pretreatment method for copper deposition process and chip packaging process Active CN114481108B (en)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008266697A (en) * 2007-04-18 2008-11-06 Jfe Steel Kk Pickling method and manufacturing method for stainless steel material
KR20110107948A (en) * 2010-03-26 2011-10-05 (주)알오호일 Manufacturing method of flexible printed circuit board using stainless steel foil and the flexible printed circuit board therefrom
CN102330099A (en) * 2011-09-09 2012-01-25 北京星航机电设备厂 Stainless steel pickling inhibitor
CN104233302A (en) * 2014-09-15 2014-12-24 南通万德科技有限公司 Etching liquid and application thereof
CN107747096A (en) * 2017-10-27 2018-03-02 东莞市慧泽凌化工科技有限公司 A kind of method of stainless steel surfaces roughening treatment
CN109680279A (en) * 2019-02-28 2019-04-26 中国石油大学(华东) A method of high-temperature resistant anti-corrosive scale inhibition coating is prepared in oil pipe steel surface
CN111321436A (en) * 2020-03-09 2020-06-23 张志梁 Cyanide-free copper plating solution assistant and copper plating solution
CN113906161A (en) * 2019-06-11 2022-01-07 三菱瓦斯化学株式会社 Aqueous composition, method for roughening surface of stainless steel using same, roughened stainless steel, and method for producing same

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008266697A (en) * 2007-04-18 2008-11-06 Jfe Steel Kk Pickling method and manufacturing method for stainless steel material
KR20110107948A (en) * 2010-03-26 2011-10-05 (주)알오호일 Manufacturing method of flexible printed circuit board using stainless steel foil and the flexible printed circuit board therefrom
CN102330099A (en) * 2011-09-09 2012-01-25 北京星航机电设备厂 Stainless steel pickling inhibitor
CN104233302A (en) * 2014-09-15 2014-12-24 南通万德科技有限公司 Etching liquid and application thereof
CN107747096A (en) * 2017-10-27 2018-03-02 东莞市慧泽凌化工科技有限公司 A kind of method of stainless steel surfaces roughening treatment
CN109680279A (en) * 2019-02-28 2019-04-26 中国石油大学(华东) A method of high-temperature resistant anti-corrosive scale inhibition coating is prepared in oil pipe steel surface
CN113906161A (en) * 2019-06-11 2022-01-07 三菱瓦斯化学株式会社 Aqueous composition, method for roughening surface of stainless steel using same, roughened stainless steel, and method for producing same
CN111321436A (en) * 2020-03-09 2020-06-23 张志梁 Cyanide-free copper plating solution assistant and copper plating solution

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