CN114474443A - Offset cutting method of crystal - Google Patents
Offset cutting method of crystal Download PDFInfo
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- CN114474443A CN114474443A CN202210161118.7A CN202210161118A CN114474443A CN 114474443 A CN114474443 A CN 114474443A CN 202210161118 A CN202210161118 A CN 202210161118A CN 114474443 A CN114474443 A CN 114474443A
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- cutting
- crystal
- offset
- crystal material
- bias
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
- B24B27/0633—Grinders for cutting-off using a cutting wire
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
A bias cutting method of a crystal relates to the technical field of crystal cutting and is used for solving the technical problem that a crystal cutting method in the prior art is easy to cause fragments, namely, the cracking rate is high. According to the offset cutting method of the crystal, in the swinging cutting process of the crystal material, the crystal material is obliquely offset by a certain angle so as to reduce the impact force of a cutting line of a cutting machine on the position of a cut wafer; and the direction of the inclined offset of the crystal material is the same as the running direction of the cutting line of the cutting machine. The offset cutting method of the crystal can effectively reduce the impact force of the cutting line of the cutting machine on the position of the cut wafer, in other words, the cutting can enable the position of the cut wafer to be closer to the critical position, thereby increasing the impact resistance of the position of the cut wafer and further effectively avoiding the phenomenon of chipping so as to reduce the cracking rate; meanwhile, cutting is carried out under the condition of offset and continuous swing, and the cutting area is reduced again, so that the cutting efficiency is effectively improved, and the cutting flatness is improved.
Description
Technical Field
The invention relates to the technical field of crystal cutting, in particular to a bias cutting method of a crystal.
Background
In the cutting process of the superhard and brittle crystal material, a left-right swinging mode is generally adopted, and the mode not only can reduce the cutting area and improve the cutting efficiency, but also can improve the cutting flatness. As shown in fig. 1, when the crystal swings to the left, only the distance from the point O at the center position to the point a at the right side contacts the cutting steel wire, so that the cutting area is effectively reduced, the work of the cutting steel wire is more facilitated, and the cutting efficiency is improved; on the contrary, when the crystal swings to the right, only half of the distance (i.e. the distance from the point O at the center to the point A at the left) of the crystal contacts the cutting steel wire, and the cutting efficiency is correspondingly improved. It is known that the cutting efficiency is improved, so that the loss of raw materials is reduced, and the cutting flatness is improved.
Specifically, the cutting process usually adopts reciprocating cutting, that is, the cutting steel wire runs for a certain time from left to right and then runs for a certain time from right to left; when the cutting steel wire runs from left to right, the impact force on the left side of the crystal is larger; on the contrary, when the cutting steel wire runs from right to left, the impact force on the right side of the crystal is larger. However, when the impact force is sufficiently large or the wafer has a small impact resistance, chipping may be caused.
In this regard, the inventors of the present application have found that, when the above-mentioned impact force is constant, the cause of the splintering is mainly the position where the impact occurs, that is, the position where the impact resistance is greater; specifically, when the impact occurs at a position after the dicing (e.g., point B in fig. 1), the impact resistance of the wafer is small, and thus the probability of chipping increases. In the actual cutting process, because the cutting adopts both a swinging mode and a reciprocating mode, the point A on one side always contacts with the cutting steel wire in the swinging process, and the point B on the other side contacts with the cutting steel wire at the same time, and the two modes are superposed together, so that the point B is possibly subjected to the maximum impact force, and at the moment, the fragments are possibly caused.
Disclosure of Invention
The invention aims to provide a crystal offset cutting method, which is used for solving the technical problem that the crystal cutting method in the prior art is easy to cause fragments, namely the cracking rate is high.
In order to achieve the purpose, the invention adopts the following technical scheme:
in the swinging cutting process of a crystal material, the crystal material is inclined and biased at a certain angle so as to reduce the impact force of a cutting line of a cutting machine on the position of a cut wafer;
and the direction of the inclined offset of the crystal material is the same as the running direction of the cutting line of the cutting machine.
In practical application, the crystal material comprises: any of single crystal silicon, polycrystalline silicon, silicon carbide, sapphire, quartz, ceramic, or crystal.
Wherein the cutting line of the cutting machine adopts a diamond wire or a cutting steel wire.
Specifically, the tilt bias angle of the crystalline material is ± 15 °.
Further, the tilt bias angle of the crystal material may be adjusted during the cutting process according to the shape of the crystal and different cutting heights.
When the cutting line of the cutting machine runs from right to left in actual cutting, the crystal is enabled to have an offset angle towards left, and continuous swinging cutting is carried out on the basis of the offset angle.
During actual cutting, when the cutting line of the cutting machine runs from left to right, the crystal is enabled to have an offset angle towards the right, and continuous swinging cutting is carried out on the basis of the offset angle.
Compared with the prior art, the bias cutting method of the crystal has the following advantages:
in the offset cutting method of the crystal, the crystal material is obliquely offset by a certain angle in the swinging cutting process of the crystal material, and the oblique offset direction of the crystal material is the same as the running direction of the cutting line of the cutting machine, so that the impact force of the cutting line of the cutting machine on the position of a cut wafer (namely the position of a point B in a figure 1) can be effectively reduced, in other words, the point B can be closer to the point A of a critical position by cutting, the impact resistance of the point B is improved, and the fragment phenomenon is effectively avoided so as to reduce the cracking rate; meanwhile, cutting is carried out under the condition of offset and continuous swing, and the cutting area is reduced again, so that the cutting efficiency is effectively improved, and the cutting flatness is improved.
Drawings
Fig. 1 is a schematic structural diagram of a crystal cutting method provided in the prior art.
Detailed Description
In the prior art, when a diamond wire is used for cutting a single crystal, splintering is easily caused, one reason is that the surface of the diamond wire is coated with diamond micro powder, so that the surface of the diamond wire is not smooth, the micro powder on the surface can touch the end face position of the crystal when the diamond wire enters a cutter, and the collision strength is very high due to the fact that the linear velocity of the diamond wire is very high, and therefore splintering is easily caused.
As shown in fig. 1, point a is a critical position before the workpiece is cut into pieces, and point B is already cut into pieces; the area of the position connection of the A point is larger, when the crystal swings to the left side, and the diamond wire runs from left to right, the diamond wire can impact the wafer from the position of the B point on the left side, so that the cracking is more easily caused.
For the convenience of understanding, the offset cutting method of the crystal provided by the embodiment of the invention is described in detail below with reference to the attached drawings.
The embodiment of the invention provides a bias cutting method of a crystal, which is characterized in that in the swinging cutting process of a crystal material, the crystal material is obliquely biased for a certain angle so as to reduce the impact force of a cutting line of a cutting machine on the position of a cut wafer;
and the direction of the inclined offset of the crystal material is the same as the running direction of the cutting line of the cutting machine.
Compared with the prior art, the bias cutting method of the crystal provided by the embodiment of the invention has the following advantages:
in the crystal offset cutting method provided by the embodiment of the invention, because the crystal material is obliquely offset by a certain angle in the swinging cutting process of the crystal material, and the oblique offset direction of the crystal material is the same as the running direction of the cutting line of the cutting machine, the impact force of the cutting line of the cutting machine on the position of a cut wafer (namely the position of a point B in a figure 1) can be effectively reduced, in other words, the point B can be closer to the point A at a critical position by cutting, so that the impact resistance of the point B is improved, and the fragment phenomenon is effectively avoided so as to reduce the cracking rate; meanwhile, cutting is carried out under the condition of offset and continuous swing, and the cutting area is reduced again, so that the cutting efficiency is effectively improved, and the cutting flatness is improved.
In practical applications, the crystal material mainly refers to a super-hard and brittle crystal material, which may include: any one of single crystal silicon, polycrystalline silicon, silicon carbide, sapphire, quartz, ceramics, or crystal; of course, other hard and brittle materials may be used, and are not limited herein.
The cutting wire of the cutting machine can adopt a diamond wire or a cutting steel wire.
The diamond wire is a wire saw formed by firmly bonding high-quality diamond abrasive grains on a high-strength steel wire by using metal or resin as a bonding agent, and is divided into a Resin Wire (RW), a plating wire (EW) and a diamond wire (DC) according to a production process; the cutting fluid is particularly suitable for cutting and processing large-size, high-hardness and brittle materials, and has the advantages of reducing comprehensive processing cost, improving efficiency, improving processing quality, reducing environmental influence and the like compared with free abrasive cutting steel wires.
The cutting steel wire, namely the cutting steel wire, is a fine high-carbon steel wire with the characteristics of high strength, high hardness and high wear resistance, and is a carrier for multi-wire cutting of superhard crystal materials in a main processing mode at present.
Specifically, the tilt bias angle of the above-described crystal material may be ± 15 °.
Furthermore, the inclined offset angle of the crystal material can be adjusted according to the shape of the crystal and different cutting heights in the cutting process, so that the flatness can be improved again, and the method is particularly suitable for high-precision and high-efficiency processing of super-hard and brittle materials and large-size materials.
Adjusting the offset angle according to the height, mainly to improve the flatness of the cut wafer; the feeding speed of the crystals with different shapes in the cutting process is different, so that the cutting capability is different, and the flatness is influenced. For example, when the cut crystal is rectangular, the offset angle can not be adjusted according to the height, and the flatness of the high and low positions of the crystal is not affected basically because the cutting capability is basically consistent during the cutting process, and the line arches on the left side and the right side are basically consistent, namely the distance between the two points A B is basically consistent; when the cut crystal is circular, the distance between A B two points at the high, middle and low positions of the crystal is different, in order to keep the distance between AB two points consistent, the offset angle at the high and low positions can be increased, the offset angle at the middle position can be reduced, the cracking rate is reduced, and the flatness of the wafer is improved.
During actual cutting, when the cutting line of the cutting machine runs from right to left, the crystal is required to have an offset angle to the left, and continuous swing cutting is carried out on the basis of the offset angle, so that the point B can be closer to the point A at the critical position during cutting, the impact resistance of the point B is increased, the cracking rate is effectively reduced, the cutting efficiency is improved, and the cutting flatness is improved.
In the same way, during actual cutting, when the cutting line of the cutting machine runs from left to right, the crystal is required to have a bias angle right, and the crystal is subjected to continuous swinging cutting on the basis of the bias angle, so that the point B is enabled to be closer to the point A of the critical position during cutting, the impact resistance of the point B is increased, the cracking rate is effectively reduced, the cutting efficiency is improved, and the cutting flatness is improved.
Here, the main equipment in the dicing step, i.e., (wire) cutting machine, is supplementary described. The linear cutting is to cut the crystal bar by using the abrasive on a tensile steel wire which reciprocates at a high speed; the linear cutting is to cut the whole crystal bar at the same time, and the rigidity of the high-tension steel wire used in the linear cutting is higher than that of the saw blade for inner diameter cutting, so the warping degree of the processed wafer is smaller.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present invention, and shall cover the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (7)
1. The offset cutting method of a crystal, characterized by that, in the course of swing cutting of the crystal material, make the said crystal material tilt and bias certain angle, in order to reduce the impact force of the cut line of the cut-off machine to cutting into the position of the crystal plate;
and the direction of the inclined offset of the crystal material is the same as the running direction of the cutting line of the cutting machine.
2. The offset cut method of crystal according to claim 1, wherein the crystal material comprises: any of single crystal silicon, polycrystalline silicon, silicon carbide, sapphire, quartz, ceramic, or crystal.
3. The offset slicing method for a crystal according to claim 2, wherein the cutting line of the slicing machine is a diamond wire or a cutting steel wire.
4. The method for off-set cutting of a crystal according to any of claims 1 to 3, wherein the crystal material is inclined at an off-set angle of ± 15 °.
5. The method of claim 4, wherein the tilt bias angle of the crystal material is adjustable during the cutting process according to the shape of the crystal and different cutting heights.
6. The method for bias cutting of crystal according to claim 1, wherein when the cutting line of the cutting machine runs from right to left, the crystal is made to have a bias angle to the left, and the cutting is performed by swinging continuously based on the bias angle.
7. The method for bias cutting of crystal according to claim 1, wherein when the cutting line of the cutting machine runs from left to right, the crystal is made to have a bias angle to the right, and the cutting is performed by swinging continuously based on the bias angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210161118.7A CN114474443B (en) | 2022-02-22 | 2022-02-22 | Offset cutting method of crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210161118.7A CN114474443B (en) | 2022-02-22 | 2022-02-22 | Offset cutting method of crystal |
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| Publication Number | Publication Date |
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| CN114474443A true CN114474443A (en) | 2022-05-13 |
| CN114474443B CN114474443B (en) | 2023-03-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210161118.7A Active CN114474443B (en) | 2022-02-22 | 2022-02-22 | Offset cutting method of crystal |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114935574A (en) * | 2022-05-17 | 2022-08-23 | 河北同光半导体股份有限公司 | Method and device for detecting high-purity silicon carbide crystal package |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09300342A (en) * | 1996-05-17 | 1997-11-25 | Tokyo Seimitsu Co Ltd | Tilting device for wire saw |
| EP0885679A1 (en) * | 1997-06-19 | 1998-12-23 | Nippei Toyama Corporation | wire saw and method of cutting work |
| US5857454A (en) * | 1995-07-07 | 1999-01-12 | Tokyo Seimitsu Co., Ltd. | Wire saw and method of slicing ingot by wire saw |
| EP0953416A2 (en) * | 1998-04-30 | 1999-11-03 | Shin-Etsu Chemical Co., Ltd. | Wire saw and method for slicing workpiece by use of the same |
| US6279564B1 (en) * | 1997-07-07 | 2001-08-28 | John B. Hodsden | Rocking apparatus and method for slicing a workpiece utilizing a diamond impregnated wire |
| JP2003212578A (en) * | 2002-01-23 | 2003-07-30 | Mitsuboshi Diamond Industrial Co Ltd | Scribing head |
| JP2011031387A (en) * | 2009-07-10 | 2011-02-17 | Mitsubishi Chemicals Corp | Crystal slicing method |
| JP2012240125A (en) * | 2011-05-16 | 2012-12-10 | Toyo Advanced Technologies Co Ltd | Wire saw apparatus, and cutting method |
| US20150314484A1 (en) * | 2014-04-30 | 2015-11-05 | Siltronic Ag | Method for simultaneously cutting a multiplicity of slices of particularly uniform thickness from a workpiece |
| CN206277533U (en) * | 2016-12-06 | 2017-06-27 | 浙江晶盛机电股份有限公司 | A kind of workbench rocking equipment for sapphire wafer multi-line cutting machine |
| CN207373492U (en) * | 2017-11-06 | 2018-05-18 | 福建北电新材料科技有限公司 | A kind of cutting mechanism for improving carborundum crystal bar cutting quality |
-
2022
- 2022-02-22 CN CN202210161118.7A patent/CN114474443B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5857454A (en) * | 1995-07-07 | 1999-01-12 | Tokyo Seimitsu Co., Ltd. | Wire saw and method of slicing ingot by wire saw |
| JPH09300342A (en) * | 1996-05-17 | 1997-11-25 | Tokyo Seimitsu Co Ltd | Tilting device for wire saw |
| EP0885679A1 (en) * | 1997-06-19 | 1998-12-23 | Nippei Toyama Corporation | wire saw and method of cutting work |
| US6112737A (en) * | 1997-06-19 | 2000-09-05 | Nippei Toyama Corporation | Wire saw and method of cutting work |
| US6279564B1 (en) * | 1997-07-07 | 2001-08-28 | John B. Hodsden | Rocking apparatus and method for slicing a workpiece utilizing a diamond impregnated wire |
| EP0953416A2 (en) * | 1998-04-30 | 1999-11-03 | Shin-Etsu Chemical Co., Ltd. | Wire saw and method for slicing workpiece by use of the same |
| JP2003212578A (en) * | 2002-01-23 | 2003-07-30 | Mitsuboshi Diamond Industrial Co Ltd | Scribing head |
| JP2011031387A (en) * | 2009-07-10 | 2011-02-17 | Mitsubishi Chemicals Corp | Crystal slicing method |
| JP2012240125A (en) * | 2011-05-16 | 2012-12-10 | Toyo Advanced Technologies Co Ltd | Wire saw apparatus, and cutting method |
| US20150314484A1 (en) * | 2014-04-30 | 2015-11-05 | Siltronic Ag | Method for simultaneously cutting a multiplicity of slices of particularly uniform thickness from a workpiece |
| CN206277533U (en) * | 2016-12-06 | 2017-06-27 | 浙江晶盛机电股份有限公司 | A kind of workbench rocking equipment for sapphire wafer multi-line cutting machine |
| CN207373492U (en) * | 2017-11-06 | 2018-05-18 | 福建北电新材料科技有限公司 | A kind of cutting mechanism for improving carborundum crystal bar cutting quality |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114935574A (en) * | 2022-05-17 | 2022-08-23 | 河北同光半导体股份有限公司 | Method and device for detecting high-purity silicon carbide crystal package |
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| CN114474443B (en) | 2023-03-21 |
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