CN114464539A - Manufacturing method for metallizing through hole of ceramic substrate - Google Patents
Manufacturing method for metallizing through hole of ceramic substrate Download PDFInfo
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- CN114464539A CN114464539A CN202110851093.9A CN202110851093A CN114464539A CN 114464539 A CN114464539 A CN 114464539A CN 202110851093 A CN202110851093 A CN 202110851093A CN 114464539 A CN114464539 A CN 114464539A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 235
- 239000000758 substrate Substances 0.000 title claims abstract description 227
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 118
- 239000002184 metal Substances 0.000 claims abstract description 118
- 238000000034 method Methods 0.000 claims abstract description 60
- 238000005245 sintering Methods 0.000 claims abstract description 53
- 238000001465 metallisation Methods 0.000 claims abstract description 28
- 238000012545 processing Methods 0.000 claims abstract description 10
- 125000006850 spacer group Chemical group 0.000 claims abstract description 10
- 238000004381 surface treatment Methods 0.000 claims abstract description 7
- 238000002955 isolation Methods 0.000 claims description 52
- 238000004080 punching Methods 0.000 claims description 21
- 229910000679 solder Inorganic materials 0.000 claims description 9
- 238000004321 preservation Methods 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000003698 laser cutting Methods 0.000 claims description 3
- 238000010329 laser etching Methods 0.000 claims description 3
- 239000010949 copper Substances 0.000 description 37
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 34
- 229910052802 copper Inorganic materials 0.000 description 34
- 239000002131 composite material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 229910052574 oxide ceramic Inorganic materials 0.000 description 4
- 239000011224 oxide ceramic Substances 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000004100 electronic packaging Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 229940112669 cuprous oxide Drugs 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
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- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
The invention discloses a method for manufacturing ceramic substrate through hole metallization, and belongs to the technical field of ceramic substrate manufacturing. The method comprises the steps of processing a ceramic substrate to obtain a sintered ceramic substrate, and manufacturing a spacer according to the sintered ceramic substrate; carrying out surface treatment on the metal piece to obtain a pretreated metal piece; separating the M sintered ceramic substrates by using a separator to form an assembly part, and then installing the pretreatment metal part in a through hole of the sintered ceramic substrate of the assembly part; sintering the assembly part provided with the pretreated metal part to enable the surface of the pretreated metal part to be combined with the wall of the through hole of the sintered ceramic substrate; and disassembling the sintered assembly part provided with the pre-treated metal part to obtain the ceramic substrate provided with the metalized through hole. Aiming at the problems of complex process and poor applicability of the ceramic substrate through hole metallization in the prior art, the invention realizes the metallization of the ceramic substrate through hole by a simple process, and has good practicability and applicability.
Description
Technical Field
The invention belongs to the technical field of power electronic packaging, and particularly relates to a manufacturing method for metallization of through holes of a ceramic substrate.
Background
The ceramic surface metalized substrate is mainly applied to power electronic devices such as power electronic devices (IGBT) at present, and is mainly used as a heat dissipation substrate or a heat sink material in the application of the microelectronic field. The existing ceramic hole metallization process mainly has three modes: 1. adopting chemical plating and electroplating modes; 2. filling electronic paste; 3. in the fields of direct copper-clad ceramic substrates (DBC) and Active Metal Brazing (AMB), copper sheets are mainly directly filled in ceramic holes to realize metallization of the ceramic holes. As a ceramic metalized substrate for carrying functions of conduction, heat dissipation and insulation, it is one of the most basic materials of ceramic package at present, but due to its unique material characteristics, its manufacturing method has the following defects:
(1) the metallization of ceramic substrate holes is realized by chemical plating and electroplating, and the method has the advantages of complex process, long manufacturing time, high cost and high environmental protection pressure.
(2) The process for realizing the hole metallization of the ceramic substrate by the DBC or AMB process specifically comprises the following steps: the hole is filled with the copper sheet, then the copper sheet is sintered, and the electric conduction of the metallized hole is ensured through a cold pressing deformation mode, but the process has low efficiency, if the ceramic substrate hole is too large or too small, the copper sheet filling mode can not be basically realized, and the copper sheet filling mode can not realize air tightness and can not be suitable for the field with high air tightness requirement.
Disclosure of Invention
1. Problems to be solved
Aiming at the problems of complex process and poor applicability of the ceramic substrate through hole metallization in the prior art, the invention provides the manufacturing method of the ceramic substrate through hole metallization, which can realize the metallization of the ceramic substrate through hole through a simple process and has good practicability, and the manufactured ceramic substrate metallized through hole is suitable for various fields and has strong applicability.
2. Technical scheme
In order to solve the problems, the technical scheme adopted by the invention is as follows:
the invention relates to a manufacturing method for metallizing through holes of a ceramic substrate, which comprises the steps of obtaining a sintered ceramic substrate; then manufacturing a spacer according to the sintered ceramic substrate; carrying out surface treatment on the metal piece to obtain a pretreated metal piece; then, separating the M sintered ceramic substrates by using a separator, wherein M is more than or equal to 1; then assembling the isolator and the M sintered ceramic substrates into an assembly, and then installing the pretreatment metal piece in a through hole of the sintered ceramic substrate of the assembly; sintering the assembly part provided with the pretreated metal part to enable the surface of the pretreated metal part to be combined with the wall of the through hole of the sintered ceramic substrate of the assembly part; and finally, disassembling the sintered assembly part provided with the pre-treated metal part to obtain the ceramic substrate provided with the metalized through hole.
Furthermore, punching the ceramic substrate to obtain a sintered ceramic substrate; or a ceramic substrate with holes is used as the sintered ceramic substrate.
Furthermore, the specific process of surface treatment of the metal piece is as follows: the surface of the metal piece is subjected to pre-oxidation treatment or the surface of the metal piece is coated with active metal solder, and then the metal piece is subjected to pre-sintering treatment.
In one example, the specific process of sintering the assembly with the pre-treated metal piece installed is as follows: placing the assembly part provided with the pretreated metal piece into a vacuum sintering furnace for sintering, wherein the vacuum degree in the vacuum sintering furnace is 10-1Pa～10-4Pa, the temperature is 750-1083 ℃, and the heat preservation time is 1-90 min.
In another example, the specific process of sintering the assembly with the pre-treated metal piece installed is as follows: and placing the assembly part provided with the pretreated metal part into an inert gas protection sintering furnace for sintering, wherein the oxygen content in the inert gas protection sintering furnace is 0-1000 PPM, the temperature is 1065-1083 ℃, and the heat preservation time is 1-90 min.
Furthermore, the specific process of manufacturing the spacer according to the sintered ceramic substrate is as follows: punching the ceramic substrate to obtain an isolated ceramic substrate, wherein the diameter of a through hole of the isolated ceramic substrate is larger than that of a through hole of the sintered ceramic substrate; or manufacturing an isolation mold with grooves according to the thickness of the sintered ceramic substrate, wherein the grooves of the isolation mold are mutually separated, and the width of the grooves of the isolation mold is larger than or equal to the thickness of the sintered ceramic substrate.
Furthermore, the specific process of separating the M sintered ceramic substrates by using the spacers is as follows: and placing the M sintered ceramic substrates and the N isolation ceramic substrates at intervals in sequence to form an assembly part, wherein N is more than or equal to 0.
Furthermore, the specific process of separating the M sintered ceramic substrates by using the spacers is as follows: and sequentially placing the M sintered ceramic substrates in the groove of the isolation mold, so that the M sintered ceramic substrates are mutually separated.
Furthermore, the specific process of punching the isolation ceramic substrate is as follows: and punching the isolation ceramic substrate and carrying out scribing and punching treatment to ensure that the isolation ceramic substrate can be detached.
Furthermore, the specific process of disassembling the sintered assembly part provided with the pretreated metal part comprises the following steps: taking down the isolation ceramic substrate or the isolation mould; cutting off the sintered pretreated metal piece to enable a section of metal piece to be connected in the through hole of each sintered ceramic substrate; and then processing the cross section of the metal piece of the sintered ceramic substrate to obtain the ceramic substrate with the metalized through hole.
Furthermore, the specific process of processing the cross section of the metal piece of the sintered ceramic substrate is as follows: the cross section of the metal piece is processed in a mechanical processing, laser cutting or etching mode, so that the distance between the cross section of the metal piece and the surface of the sintered ceramic substrate is within a set size.
Further, the metal member is a metal strip, a metal column or a metal wire.
3. Advantageous effects
Compared with the prior art, the invention has the beneficial effects that:
according to the manufacturing method for the ceramic substrate through hole metallization, the isolation piece is manufactured and used, and the through holes of the ceramic substrates can be metallized at one time, so that batch rapid production can be carried out, and the production efficiency is greatly improved. Furthermore, the method can realize porous metallization and through hole metallization of various types of ceramic substrates, and has strong practicability and wide application. In addition, the method is simple, practical, environment-friendly and economical, and has a good application prospect.
Drawings
FIG. 1 is a schematic flow diagram of the process of the present invention;
FIG. 2 is a schematic view of an isolated ceramic substrate structure of the present invention;
FIG. 3 is a schematic view of the isolation mold of the present invention;
FIG. 4 is a first assembly view of the pretreatment metal part installed in the assembly according to the present invention.
FIG. 5 is a second assembly view of the pretreated metal part installed in the assembly according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments; moreover, the embodiments are not relatively independent, and can be combined with each other according to needs, so that a better effect is achieved. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention. For a further understanding of the invention, reference should be made to the following detailed description taken in conjunction with the accompanying drawings and examples.
Referring to fig. 1, the method for manufacturing the ceramic substrate through-hole metallization of the present invention includes the following steps:
s100, obtaining a sintered ceramic substrate; specifically, a ceramic substrate is punched to obtain a sintered ceramic substrate, or a ceramic substrate having holes is used as the sintered ceramic substrate, and specifically, a ceramic substrate having predetermined holes can be directly purchased as the sintered ceramic substrate. The specific process of punching the ceramic substrate comprises the following steps: the ceramic substrate is punched by laser, the number a of the through holes is more than or equal to 1, and the specific punching number can be selected according to actual requirements. The material of the sintered ceramic substrate is alumina ceramic (Al2O3), zirconia-doped reinforced alumina ceramic (ZTA), zirconia ceramic (ZrO2), aluminum nitride ceramic (AlN), silicon nitride ceramic (Si3N4), silicon carbide ceramic (SiC), quartz glass (SiO2), or sapphire.
S200, manufacturing a spacer according to the sintered ceramic substrate; specifically, the ceramic substrate is punched to obtain an isolation ceramic substrate, or an isolation mold with a groove is manufactured according to the thickness of the sintered ceramic substrate. It should be noted that the ceramic substrate in this step may be the same type as the ceramic substrate in step S100, and the ceramic substrate in this step may be a different type from the ceramic substrate in step S100. Further, as shown in fig. 2, the punching process refers to punching a hole in the ceramic substrate and performing a scribing and punching process, so that the ceramic substrate is detachable, that is, the isolation ceramic substrate is detachable, thereby recycling the isolation ceramic substrate. It should be noted that the number of the through holes of the isolation ceramic substrate is the same as that of the through holes of the sintered ceramic substrate, and the diameter of the through holes of the isolation ceramic substrate is larger than that of the through holes of the sintered ceramic substrate in the invention, so that the isolation and support functions of the sintered ceramic substrate can be realized.
It should be noted that, as shown in fig. 3, the trenches of the isolation mold are separated from each other, and the width of the trench of the isolation mold is greater than or equal to the thickness of the sintered ceramic substrate, so that the sintered ceramic substrate can be tightly attached to the trenches. In addition, the number of the grooves is the same as that of the sintered ceramic substrates, and the isolation and support effects on the sintered ceramic substrates can be realized through the isolation die.
Step S300, performing surface treatment on the metal part to obtain a pretreated metal part, wherein the specific process of the surface treatment on the metal part is as follows: and carrying out pre-oxidation treatment on the surface of the metal piece or coating active metal solder on the surface of the metal piece. Wherein the oxidation temperature during the pre-oxidation treatment is 400-1000 ℃. And then, performing pre-sintering treatment on the metal piece, wherein the process of performing pre-sintering treatment on the metal piece is in the prior art. In addition, the metal piece is a metal strip, a metal column or a metal wire, and the metal piece is made of copper, aluminum or nickel. It should be noted that, when the metal member is a metal column, the metal member of the present invention may have a hollow structure or a solid structure.
It should be noted that step S200 and step S300 are executed independently, that is, step S200 and step S300 may be executed simultaneously or in a certain order, and the execution order of the steps may be arbitrarily selected as required. Further, the following steps are performed in the following order, specifically as follows:
s400, separating M sintered ceramic substrates by using a separator, wherein M is more than or equal to 1; specifically, the following two modes are included:
the first method comprises the following steps: and placing the M sintered ceramic substrates and the N isolating ceramic substrates at intervals in sequence to form an assembly part. Wherein N is more than or equal to 0; when only a sintering ceramic substrate, when N is 0, do not place isolation ceramic substrate promptly, and when polylith sintering ceramic substrate, keep apart ceramic substrate and place between two piece adjacent sintering ceramic substrate to can realize supporting and the isolation effect to sintering ceramic substrate.
And the second method comprises the following steps: the M sintered ceramic substrates are sequentially placed in the groove of the isolation mold, so that the M sintered ceramic substrates are mutually separated, and the isolation of the multiple sintered ceramic substrates is realized.
Step S500, combining the isolation member and the M sintered ceramic substrates to form an assembly member, and then installing the pretreatment metal member in the through hole of the sintered ceramic substrate of the assembly member, it should be noted that when the isolation ceramic substrate is adopted, the specific installation process is as follows: the pre-treated metal pieces were sequentially passed through the through-holes of the sintered ceramic substrate and the through-holes of the isolated ceramic substrate at the time of mounting, as shown in fig. 4. It should be noted that the pretreated metal piece is tightly attached to the wall of the through hole of the sintered ceramic substrate. In addition, the diameter of the through hole of the isolating ceramic substrate is larger than that of the through hole of the sintered ceramic substrate, namely, the wall of the through hole of the isolating ceramic substrate cannot contact with the surface of the pretreated metal piece.
In addition, as shown in fig. 5, when the isolation mold is used, since the bottom of the M sintered ceramic substrates are mounted in the groove, that is, the M sintered ceramic substrates are disposed perpendicular to the isolation mold, the pretreatment metal member sequentially passes through the through hole of the sintered ceramic substrate in a direction perpendicular to the sintered ceramic substrate.
S600, sintering the assembly part provided with the pretreated metal part to enable the surface of the pretreated metal part to be combined with the wall of a through hole of a sintered ceramic substrate of the assembly part; it is worth mentioning that the insulating ceramic substrate or the insulating mold can ensure that the sintered ceramic substrate is not deformed and broken in the sintering process, and the distance between the section of the metal part and the surface of the sintered ceramic substrate in the subsequent step can be controlled by selecting the thickness of the insulating ceramic substrate or the width of the groove of the insulating mold.
It is worth further explaining that, in one example, the specific process of sintering the assembly with the pre-processed metal piece installed is as follows: placing the assembly part provided with the pretreated metal piece into a vacuum sintering furnace for sintering, wherein the vacuum degree in the vacuum sintering furnace is 10-1Pa～10-4Pa, the temperature is 750-1083 ℃, and the heat preservation time is 1-90 min. It should be noted that the pretreated metal member of the assembly in this example is a metal member with a surface coated with an active metal solder, that is, the vacuum sintering furnace is suitable for sintering the metal member with a surface coated with an active metal solder. In another example, the specific process of sintering the assembly with the pre-treated metal piece installed is as follows: and placing the assembly part provided with the pretreated metal part into an inert gas protection sintering furnace for sintering, wherein the oxygen content in the inert gas protection sintering furnace is 0-1000 PPM, the temperature is 1065-1083 ℃, and the heat preservation time is 1-90 min. It is worth noting that the pre-treated metal pieces of the assembly in this example are pre-oxidized metal pieces, i.e. the inert gas shielded sintering furnace is suitable for sintering pre-oxidized metal pieces. Furthermore, the assembly part provided with the pretreated metal part is sintered, so that the oxide or active metal solder on the surface of the pretreated metal part and the wall of the through hole of the sintered ceramic substrate generate chemical reaction, and the pretreated metal part and the wall of the through hole of the sintered ceramic substrate are tightly combined together.
And S700, disassembling the sintered assembly part provided with the pre-treated metal part to obtain the ceramic substrate provided with the metalized through hole. Specifically, the isolating ceramic substrate or the isolating mold is taken down, and then the sintered pretreated metal piece is cut off, so that a section of metal piece is connected in the through hole of each sintered ceramic substrate, and it should be noted that the section of metal piece is one section of the sintered pretreated metal piece. And then processing the cross section of the metal piece of the sintered ceramic substrate to obtain the ceramic substrate with the metalized through hole. It should be noted that the specific process of processing the cross section of the metal part is as follows: the cross section of the metal part is processed in a mechanical processing, laser cutting or etching mode, so that the distance between the cross section of the metal part and the surface of the sintered ceramic substrate is within a set size, namely the cross section of the metal part is flush with the surface of the sintered ceramic substrate, or the cross section of the metal part is higher or lower than the surface of the sintered ceramic substrate. It should be noted that the set size value may be arbitrarily set as required.
According to the manufacturing method for the ceramic substrate through hole metallization, the isolation ceramic substrate or the isolation mold is used for manufacturing, and through holes of a plurality of ceramic substrates can be metallized at one time, so that batch rapid production can be carried out, and the production efficiency is greatly improved. Furthermore, the method can realize porous metallization and through hole metallization of various types of ceramic substrates, and has strong practicability and wide application. In addition, the method is simple, practical, environment-friendly and economical, and has good application prospect.
It should be noted that the copper and ceramic composite material produced by the method of the present invention is mainly applied to various fields such as heat dissipation substrates of power electronic products, electric conduction or heat conduction paths in electronic packaging, upper and lower layer interconnection of ceramic circuit substrates, upper and lower interconnection of multilayer ceramic substrates, 3D electronic packaging, etc., and can realize metal and ceramic composite materials with different functions by adjusting the diameter and number of through holes, the positions and distribution of through holes, etc. within the range of 2D and 3D. In addition, the method can reduce the macroscopic thermal stress between the metal and the ceramic at room temperature, thereby improving the reliability of the product. The heat dissipation effect of the metal and ceramic composite substrate material can be greatly improved through the design of the number and the size of the metallized through holes. The optimization of electricity and heat transmission in a more excellent form can be realized in a 3D range, so that more I/O pins and a heat dissipation area with larger area can be made. In addition, in the field of upper and lower interconnection of multilayer ceramic substrates, the I/O pins can be increased in exponential level through staggered sintering interconnection, and powerful support is provided for 3D high-density packaging of chips.
Example 1
In this embodiment, the manufacturing method for the ceramic substrate through-hole metallization is adopted, and specifically, the method for manufacturing the AlN-Cu composite material includes the following steps:
step S100, selecting 10 aluminum nitride ceramic substrates with the specification of 138mm × 190mm × 1.0mm, punching 50 through holes on each ceramic substrate, wherein the diameter of each through hole is less than or equal to 2mm, and in the embodiment, the diameter of each through hole is 1.6mm, and then performing surface modification treatment on the punched AlN ceramic substrate to obtain a fired ceramic substrate.
And S200, punching, scribing and punching 9 aluminum oxide ceramic substrates with the same specification to obtain the detachable isolation ceramic substrate.
And step S300, immersing 50 cleaned copper bars with the specification of phi 1.50 x 20mm into active metal solder, uniformly coating a layer of active metal brazing solder on the surfaces of the copper bars, and then performing presintering treatment on the surface-treated copper bars to obtain the pretreated copper bars.
Step S400, the sintered ceramic substrate and the isolation ceramic substrate are sequentially placed at intervals to form an assembly part, and then the preprocessed copper bars are installed in the through holes of the sintered ceramic substrate.
Step S500, sintering the assembly part provided with the pretreated copper strip, specifically, placing the assembly part in a vacuum sintering furnace, wherein the vacuum degree in the vacuum sintering furnace is 10-3Pa, the highest temperature of 900 ℃, heat preservation for 15min, and then cooling to obtain a sintered assembly.
Step S600, detaching the isolation ceramic substrate, cutting off the sintered copper bars in a mechanical mode, and separating the sintered ceramic substrate to enable each sintered ceramic substrate to be internally provided with a section of copper bar.
And S700, removing the copper bars protruding out of the surface of the sintered ceramic substrate in a machining mode, and keeping the cross section of the copper bars and the surface of the ceramic on the same plane to obtain the ceramic substrate with the metalized through holes.
Example 2
This example is the same as example 1 except that this example was used to produce Al2O3-Cu composite and sintering conditions, the specific steps are as follows:
step S100, selecting 12 aluminum oxide ceramic substrates with the specification of 138mm × 190mm × 0.635mm, and drilling 6 through holes on each ceramic substrate to obtain a sintered ceramic substrate, where the diameter of each through hole is less than or equal to 2mm, and the diameter of each through hole in this embodiment is 2 mm.
And S200, punching, scribing and punching 11 aluminum oxide ceramic substrates with the same specification to obtain the detachable isolation ceramic substrate.
And step S300, carrying out pre-oxidation treatment on the cleaned copper bar with the specification of phi 2.0 x 20mm to enable a layer of cuprous oxide film to be generated on the surface of the copper bar.
Step S400, the sintered ceramic substrate and the isolation ceramic substrate are sequentially placed at intervals to form an assembly part, and then the preprocessed copper bars are installed in the through holes of the sintered ceramic substrate.
And S500, sintering the assembly part provided with the pretreated copper bar, specifically, placing the assembly part in a nitrogen protection continuous sintering furnace, wherein the oxygen content in the vacuum sintering furnace is about 150PPM, the maximum temperature is 1075 ℃, the temperature is kept for 15min, and then cooling is carried out to obtain the sintered assembly part.
Step S600, detaching the isolation ceramic substrate, cutting off the sintered copper bars in a mechanical mode, and separating the sintered ceramic substrate to enable each sintered ceramic substrate to be internally provided with a section of copper bar.
And S700, removing the copper bars protruding out of the surface of the sintered ceramic substrate in a chemical etching mode, and keeping the cross section of the copper bars and the surface of the ceramic on the same plane to obtain the ceramic substrate with the metalized through holes.
Example 3
This example is the same as example 1 except that this example was used to fabricate Si3N4-Cu composite material, comprising the following specific steps:
step S100, selecting 8 blocks of 114mmSi of 114mm 0.32mm specification3N4The ceramic substrate, 6 through-holes are made on each ceramic substrate to obtain the sintered ceramic substrate, the diameter of the through-hole is less than or equal to 2 millimeters, and the diameter of the through-hole in the embodiment is 0.5 mm.
And S200, punching 7 aluminum oxide ceramic substrates with the specification of 114mm by 1.0mm, scribing and punching to obtain the detachable isolated ceramic substrates.
And step S300, coating active metal solder on the cleaned copper strip with the specification of phi 0.48 x 20mm, and then performing pre-sintering treatment on the surface-treated copper strip to obtain the pretreated copper strip.
Step S400, the sintered ceramic substrate and the isolation ceramic substrate are sequentially placed at intervals to form an assembly part, and then the preprocessed copper bars are installed in the through holes of the sintered ceramic substrate.
Step S500, sintering the assembly part provided with the pretreated copper strip, specifically, placing the assembly part in a vacuum sintering furnace, wherein the vacuum degree in the vacuum sintering furnace is 10-3Pa, the highest temperature of 920 ℃, and heat preservation for 15min, and then cooling to obtain a sintered assembly.
Step S600, detaching the isolation ceramic substrate, cutting off the sintered copper bars in a mechanical mode, and separating the sintered ceramic substrate to enable each sintered ceramic substrate to be internally provided with a section of copper bar.
And S700, removing the copper bars protruding out of the surface of the sintered ceramic substrate in a chemical etching mode, and keeping the cross section of the copper bars and the surface of the ceramic on the same plane to obtain the ceramic substrate with the metalized through holes.
The invention has been described in detail hereinabove with reference to specific exemplary embodiments thereof. It will, however, be understood that various modifications and changes may be made without departing from the scope of the invention as defined in the appended claims. The detailed description and drawings are to be regarded as illustrative rather than restrictive, and any such modifications and variations are intended to be included within the scope of the present invention as described herein. Furthermore, the background is intended to be illustrative of the state of the art as developed and the meaning of the present technology and is not intended to limit the scope of the invention or the application and field of application of the invention.
Claims (12)
1. The method for manufacturing the ceramic substrate through hole metallization is characterized by comprising the following steps
Obtaining a sintered ceramic substrate;
manufacturing a spacer according to the sintered ceramic substrate;
carrying out surface treatment on the metal piece to obtain a pretreated metal piece;
separating the M sintered ceramic substrates by using a separator, wherein M is more than or equal to 1;
assembling the isolation piece and the M sintered ceramic substrates into an assembly piece, and then installing the pretreatment metal piece in a through hole of the sintered ceramic substrate of the assembly piece;
sintering the assembly part provided with the pretreated metal part to enable the surface of the pretreated metal part to be combined with the wall of the through hole of the sintered ceramic substrate of the assembly part;
and disassembling the sintered assembly part provided with the pre-treated metal part to obtain the ceramic substrate provided with the metalized through hole.
2. The method of claim 1, wherein the ceramic substrate is perforated to form a sintered ceramic substrate; or a ceramic substrate with holes is used as the sintered ceramic substrate.
3. The method for manufacturing ceramic substrate through hole metallization according to claim 1, wherein the specific process of performing surface treatment on the metal piece is as follows: the surface of the metal piece is subjected to pre-oxidation treatment or the surface of the metal piece is coated with active metal solder, and then the metal piece is subjected to pre-sintering treatment.
4. The method according to claim 1, wherein the sintering of the assembly with the pre-treated metal part is carried out by the following steps: placing the assembly part provided with the pretreated metal piece in a vacuum sintering furnace for sintering, wherein,the degree of vacuum in the vacuum sintering furnace was 10-1Pa～10-4Pa, the temperature is 750-1083 ℃, and the heat preservation time is 1-90 min.
5. The method according to claim 1, wherein the sintering of the assembly with the pre-treated metal part is carried out by the following steps: and placing the assembly part provided with the pretreated metal part into an inert gas protection sintering furnace for sintering, wherein the oxygen content in the inert gas protection sintering furnace is 0-1000 PPM, the temperature is 1065-1083 ℃, and the heat preservation time is 1-90 min.
6. The method for manufacturing ceramic substrate through hole metallization according to claim 1, wherein the specific process for manufacturing the spacer according to the sintered ceramic substrate is as follows: punching the ceramic substrate to obtain an isolated ceramic substrate, wherein the diameter of a through hole of the isolated ceramic substrate is larger than that of a through hole of the sintered ceramic substrate;
or manufacturing an isolation mold with grooves according to the thickness of the sintered ceramic substrate, wherein the grooves of the isolation mold are mutually separated, and the width of the grooves of the isolation mold is larger than or equal to the thickness of the sintered ceramic substrate.
7. The method for manufacturing ceramic substrate through hole metallization according to claim 6, wherein the specific process of separating the M sintered ceramic substrates by using the spacers is as follows:
and placing the M sintered ceramic substrates and the N isolation ceramic substrates at intervals in sequence to form an assembly part, wherein N is more than or equal to 0.
8. The method for manufacturing ceramic substrate through hole metallization according to claim 6, wherein the specific process of separating the M sintered ceramic substrates by using the spacers is as follows: and sequentially placing the M sintered ceramic substrates in the groove of the isolation mold, so that the M sintered ceramic substrates are mutually separated.
9. The method for manufacturing ceramic substrate through-hole metallization according to claim 6, wherein the specific process of punching the isolation ceramic substrate is as follows: and punching the isolation ceramic substrate and carrying out scribing and punching treatment to ensure that the isolation ceramic substrate can be detached.
10. The method for manufacturing ceramic substrate through hole metallization according to claim 6, wherein the specific process of disassembling the sintered assembly with the pre-processed metal part is as follows:
taking down the isolation ceramic substrate or the isolation mould;
cutting off the sintered pretreated metal piece to enable a section of metal piece to be connected in the through hole of each sintered ceramic substrate;
and processing the cross section of the metal piece of the sintered ceramic substrate to obtain the ceramic substrate with the metalized through hole.
11. The method for manufacturing ceramic substrate through hole metallization according to claim 10, wherein the specific process for processing the metal part cross section of the sintered ceramic substrate is as follows: the cross section of the metal piece is processed in a mechanical processing, laser cutting or etching mode, so that the distance between the cross section of the metal piece and the surface of the sintered ceramic substrate is within a set size.
12. The method for manufacturing ceramic substrate through hole metallization according to any one of claims 1 to 11, wherein the metal member is a metal strip, a metal column or a metal wire.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115286416A (en) * | 2022-08-12 | 2022-11-04 | 浙江精瓷半导体有限责任公司 | Production process of ceramic refrigerating sheet |
| CN115286416B (en) * | 2022-08-12 | 2023-06-09 | 浙江精瓷半导体有限责任公司 | Production process of ceramic refrigerating sheet |
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