CN114464509A - Surface-mounted thick film fuse structure and manufacturing method thereof - Google Patents
Surface-mounted thick film fuse structure and manufacturing method thereof Download PDFInfo
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- CN114464509A CN114464509A CN202210177941.7A CN202210177941A CN114464509A CN 114464509 A CN114464509 A CN 114464509A CN 202210177941 A CN202210177941 A CN 202210177941A CN 114464509 A CN114464509 A CN 114464509A
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- fuse
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- insulation layer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000009413 insulation Methods 0.000 claims abstract description 31
- 238000002955 isolation Methods 0.000 claims abstract description 13
- 239000011810 insulating material Substances 0.000 claims abstract description 3
- 238000010304 firing Methods 0.000 claims description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 14
- 229910052709 silver Inorganic materials 0.000 claims description 14
- 239000004332 silver Substances 0.000 claims description 14
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- 238000005245 sintering Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 10
- 238000007639 printing Methods 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000007650 screen-printing Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910000510 noble metal Inorganic materials 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims description 2
- 239000011163 secondary particle Substances 0.000 claims description 2
- 239000002002 slurry Substances 0.000 claims 6
- 239000007772 electrode material Substances 0.000 claims 2
- 238000005538 encapsulation Methods 0.000 claims 1
- 238000010891 electric arc Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 abstract 1
- 230000009467 reduction Effects 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006255 coating slurry Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
- H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
- H01H85/0411—Miniature fuses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H69/00—Apparatus or processes for the manufacture of emergency protective devices
- H01H69/02—Manufacture of fuses
- H01H69/022—Manufacture of fuses of printed circuit fuses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
- H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
- H01H85/0411—Miniature fuses
- H01H2085/0412—Miniature fuses specially adapted for being mounted on a printed circuit board
Abstract
A surface-mounted thick film fuse structure and a manufacturing method thereof belong to the field of electronic components. The fuse comprises a substrate, a back electrode, a surface electrode, a heat insulation layer, a fuse body layer, an encapsulating layer, a terminal electrode, a fuse body, a fuse isolation through hole and a fuse; the substrate is made of high-temperature-resistant insulating materials, the back electrodes are located at two ends of the back face of the substrate, the surface electrodes are located at two ends of the surface of the substrate, the heat insulation layer is located on the surface of the substrate, the fuse body layer is located on the surface of the heat insulation layer, the encapsulating layer is located on the surface of the fuse body layer, the end electrodes cover the back electrodes, the surface electrodes and two ends of the substrate, the fuse isolation through holes penetrate through the fuse body, the shape, the number, the size and the arrangement mode of the isolation through holes are set according to the specific performance of fuses, and the fuse is manufactured by adopting a thick-film integrated process technology. The problem of contradiction between improving rated voltage and reducing electric arc in the prior art is solved. The fuse is widely applied to the fields of miniaturized fuses with high working voltage, low electric arc and high reliability.
Description
Technical Field
The invention belongs to the field of electronic components, and further relates to the field of film fuses, in particular to a surface-mounted thick film fuse structure and a manufacturing method thereof.
Background
In electronic components, a fuse is an element connected in series in an electronic circuit to protect against overcurrent. When the current of the circuit exceeds a specified value and lasts for a certain time, the fuse link of the fuse generates heat exceeding the emitted heat and the temperature of the fuse link reaches the melting point of the fuse link, so that the fuse link is fused, and the purpose of overcurrent protection is achieved.
For the surface-mounted thick film fuse, the product has small size, stable electrical property and high reliability, and is suitable for being directly welded and mounted on a PCB (printed Circuit Board), so that the surface-mounted thick film fuse is widely applied to the fields of spaceflight, aviation, electronics, ships and the like. The fuse link of the existing surface-mounted thick film fuse has an I-shaped single fuse structure as shown in fig. 1, the fuse link graph generally has a structure with two wide ends and a narrow middle, and the energy during fusing is mainly concentrated in a small area with the narrowest middle to generate a large electric arc, so that the rated voltage of the surface-mounted thick film fuse is generally low. As the circuit supply voltage continues to increase, the voltage rating of thick film fuses must correspondingly increase, further creating larger arcs.
In view of the above, the present invention is particularly proposed.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the problem of contradiction between the improvement of rated voltage and the reduction of electric arc in the prior art is solved.
The invention has the following inventive concept: the single-path current path of the existing surface-mounted thick film fuse is improved into a plurality of paths of series-parallel current paths, a grid-shaped thick film is adopted on a thick film plane structure for realization, and a thermal insulation layer structure is arranged on the lower surface of a fuse link, as shown in fig. 2 and 3. For the fuse of the grid-type graphic fuse link, the energy during fusing is uniformly distributed, so that the arc suppression performance of the fuse link can be improved, and the rated voltage of the fuse link is further improved.
Therefore, the invention provides a surface-mounted thick film fuse structure, as shown in fig. 2 and 3. The method comprises the following steps: the fuse comprises a substrate 1, a back electrode 2, a surface electrode 3, a heat insulation layer 4, a fuse body layer 5, an encapsulating layer 6, a terminal electrode 7, a fuse body 8, a fuse isolation through hole 9 and a fuse wire 10.
The substrate 1 is made of high temperature resistant insulating material, such as ceramic, glass, etc.
The back electrodes 2 are positioned at two ends of the back surface of the substrate 1.
The surface electrodes 3 are positioned at both ends of the surface of the substrate 1.
The heat insulation layer 4 is positioned on the surface of the substrate 1, and two ends of the heat insulation layer 4 are connected with the surface electrodes 3 at two ends of the surface of the substrate 1.
The fuse body layer 5 is positioned on the surface of the heat insulation layer 4, and two ends of the fuse body layer 5 are connected with the surface electrodes 3 at two ends of the surface of the substrate 1 in an end mode.
The encapsulating layer 6 is positioned on the surface of the fuse body layer 5, and two ends of the encapsulating layer 6 are lapped with the surface electrodes 3 at two ends of the surface of the substrate 1; the material of the encapsulating layer 6 is a glass material.
The terminal electrode 7 covers the back electrode 2, the surface electrode 3 and two ends of the substrate 1.
The fuse isolation through holes 9 penetrate through the fuse link body 8, and the shape, the number, the size and the arrangement mode of the isolation through holes 9 are set according to the specific performance of the fuse and can be round, groove-shaped or other shapes.
The fuse 10 is a fuse body end portion between the isolation through holes 9, and is a film-like fuse.
The manufacturing method of the surface-mounted thick film fuse structure comprises the following manufacturing processes:
(1) the surface and the back of the substrate are respectively printed and sintered with a surface electrode and a back electrode, the main components of the surface electrode and the back electrode are silver palladium, wherein the palladium content is 1-35%.
(2) Printing and sintering a heat insulating layer on the surface of the substrate with the prepared electrode, wherein the main component of the heat insulating layer is silicon dioxide.
(3) And printing and sintering a fuse body layer on the surface of the prepared heat-insulating layer, wherein the fuse body mainly comprises noble metals such as gold, silver and the like.
(4) And printing and sintering an encapsulating layer on the surface of the prepared fuse link.
The heat insulation layer can be prepared by adopting a thick film screen printing mode, and the thickness of a fired film of the heat insulation layer is 10-100 mu m.
The firing temperature of the heat insulation layer is greater than or equal to the firing temperature of the fuse body layer.
The plane pattern of the fuse body layer is a grid pattern, and as shown in fig. 3, the fuse body layer is composed of a plurality of fuse wires connected in series and in parallel.
The fuse body layer can adopt a thick film screen printing mode, and the sintering film thickness of the fuse body layer is 1-50 mu m.
The sintering temperature of the fuse body layer is greater than or equal to the sintering temperature or the curing temperature of the encapsulating layer.
Compared with the prior art, the invention has the following beneficial effects:
(1) the rated voltage of the surface-mounted thick film fuse can be greatly improved.
(2) With the continuous rise of the power supply voltage of the circuit, the electric arc can be controlled to a very small degree, and the contradiction that the reduction of the electric arc is increased along with the rise of the rated voltage is solved.
(3) Because the integration of the integrated process is adopted, the volume is small and the reliability is high.
(4) The method is suitable for batch and large-scale production, and has the advantages of high quality consistency, high yield and low cost.
The invention is widely applied to the field of miniaturized surface-mounted fuses with high working voltage and low electric arc and high reliability.
Drawings
Fig. 1 is a schematic plan view of a fuse link of the prior art.
Fig. 2 is a schematic view of a longitudinal structure of the fuse of the present invention.
FIG. 3 is a schematic plan view of a fuse layer according to the present invention.
In the figure: the fuse structure comprises a substrate 1, a back electrode 2, a surface electrode 3, a heat insulation layer 4, a fuse body layer 5, an encapsulating layer 6, a terminal electrode 7, a fuse body 8, a fuse isolation through hole 9 and a fuse 10.
Detailed Description
With reference to fig. 2 and 3, the technical solution of the present invention is implemented as follows:
(1) preparing materials: a ceramic substrate is selected as a substrate, and a scribing machine is used for scribing a splitting line (namely a scribing groove for splitting a single fuse chip) on the ceramic substrate according to the arrangement layout size of the fuses.
(2) And screen printing a surface electrode and a back electrode on the surface of the scribed ceramic substrate, wherein the surface electrode and the back electrode mainly comprise silver palladium, and the content of palladium is 1-35%.
(3) Preparing a thermal insulation layer on the surface of a ceramic substrate with an electrode, wherein the main component of the thermal insulation layer is silicon dioxide, the firing temperature of the thermal insulation layer is 850 +/-30 ℃, and the firing film thickness of the thermal insulation layer is 10-100 mu m.
(4) And (2) screen-printing a fuse body layer on the surface of the prepared heat-insulating layer, wherein the main component of the fuse body is gold or silver, the plane structure of the fuse body layer is shown in figure 2 and is in a grid structure, 4 rows of fuses are connected in series, each row of fuses is formed by connecting 3 fuses in parallel, the fired film thickness of the fuse body is 1-50 mu m, and the fired temperature of the fuse body is 850 +/-30 ℃.
(5) Printing a glass encapsulating layer on the surface of the prepared fuse link, wherein the main component of the encapsulating layer is glass, the firing film thickness of the encapsulating layer is 5-50 mu m, and the firing temperature of the encapsulating layer is 600 +/-30 ℃.
(6) And marks are printed on the surface of the prepared encapsulating layer, so that subsequent screening of products is facilitated.
(7) And scribing the marked product along the middle of the adjacent electrode for the first strip-shaped splintering, and then coating silver on the end surface of the strip-shaped product, wherein the main component of the silver coating slurry is silver palladium, the palladium solder is 1-30%, the silver coating depth is 0.1-2 mm, and the silver coating firing temperature is 600 +/-30 ℃.
(8) And performing secondary particle splintering on the silver-coated strip product.
(9) Electroplating the secondary cracked granular product, plating nickel, and then plating lead or tin-lead, wherein the thickness of the nickel layer is more than or equal to 3 mu m.
Finally, it should be noted that: the above examples are merely examples for clarity of illustration, and the present invention includes but is not limited to the above examples, which are not necessarily exhaustive of all embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. Embodiments that meet the requirements of the present invention are within the scope of the present invention.
Claims (10)
1. A surface mount thick film fuse structure comprising: the fuse comprises a substrate, a back electrode, a surface electrode, a heat insulation layer, a fuse body layer, an encapsulating layer, a terminal electrode, a fuse body, a fuse isolation through hole and a fuse wire;
the substrate is made of a high-temperature-resistant insulating material;
the back electrodes are positioned at two ends of the back surface of the substrate;
the surface electrodes are positioned at two ends of the surface of the substrate;
the heat insulation layer is positioned on the surface of the substrate, and two ends of the heat insulation layer are connected with the surface electrodes at two ends of the surface of the substrate in an end manner;
the fuse body layer is positioned on the surface of the heat insulation layer, and two ends of the fuse body layer are connected with the surface electrodes at two ends of the surface of the substrate;
the encapsulating layer is positioned on the surface of the fusing body layer, and two ends of the encapsulating layer are in lap joint with the surface electrodes at two ends of the surface of the substrate;
the end electrodes cover the back electrode, the surface electrode and two ends of the substrate;
the fuse isolation through holes penetrate through the fuse link body, and the shape, the number, the size and the arrangement mode of the isolation through holes are set according to the specific performance of the fuse;
the fuse is a fuse body end portion between the isolation vias.
2. A surface mount thick film fuse structure as claimed in claim 1 wherein said substrate is of a ceramic or glass material.
3. A surface mount thick film fuse structure as claimed in claim 1 wherein the material of said encapsulation layer is a glass material.
4. A surface mount thick film fuse structure as claimed in claim 1 wherein said fuse isolation via is circular or slot shaped.
5. A surface-mounted thick film fuse structure as claimed in claim 1 wherein said fuse body layer has a planar configuration in the form of a grid comprising a plurality of fuses connected in series and parallel.
6. A surface mount thick film fuse structure as claimed in claim 5, wherein said grid type structure is formed by connecting 4 rows of fuses in series, each row of fuses being formed by connecting 3 fuses in parallel.
7. A surface mount thick film fuse structure as claimed in claim 1, wherein said fuse is a film fuse.
8. A method of manufacturing a surface mount thick film fuse structure as claimed in claim 1, comprising the manufacturing process of:
(1) respectively printing and sintering a surface electrode and a back electrode on the surface and the back of a substrate, wherein the surface electrode and the back electrode mainly comprise silver palladium, and the content of palladium is 1-35%;
(2) printing and sintering a heat insulation layer on the surface of a substrate with an electrode, wherein the main component of the heat insulation layer is silicon dioxide;
(3) printing and sintering a fuse body layer on the surface of the prepared heat insulation layer, wherein the fuse body mainly comprises noble metal;
(4) printing and sintering an encapsulating layer on the surface of the prepared fuse link;
the heat insulation layer is prepared by adopting a thick film screen printing mode, and the thickness of a fired film of the heat insulation layer is 10-100 mu m;
the firing temperature of the heat insulation layer is greater than or equal to that of the fuse body layer;
the fuse body layer is prepared by adopting a thick film screen printing mode, and the thickness of a fired film of the fuse body layer is 1-50 mu m;
the sintering temperature of the fuse body layer is greater than or equal to the sintering temperature or the curing temperature of the encapsulating layer.
9. The method of manufacturing a surface mount thick film fuse structure of claim 8, wherein said noble metal is gold or silver.
10. The method of manufacturing a surface mount thick film fuse structure of claim 8, in which the embodiments are as follows:
(1) preparing materials: the substrate is a ceramic substrate, split lines are scribed on the ceramic substrate by a scribing machine according to the arrangement and layout size of fuses, silver-palladium slurry with the palladium content of 1-35% is selected as a surface electrode material and a back electrode material, silicon dioxide slurry is selected as a heat insulation layer material, gold slurry or silver slurry is selected as a fuse link material, glass slurry is selected as an encapsulating layer material, and silver-palladium slurry with the palladium content of 1-30% is selected as an end silver coating material;
(2) screen printing a surface electrode and a back electrode on the surface of the scribed ceramic substrate;
(3) preparing a thermal insulation layer on the surface of the ceramic substrate with the prepared electrode, wherein the firing temperature of the thermal insulation layer is 850 +/-30 ℃, and the firing film thickness of the thermal insulation layer is 10-100 mu m;
(4) screen printing a fuse body layer on the surface of the prepared heat insulation layer, wherein the firing film thickness of the fuse body is 1-50 mu m, and the firing temperature of the fuse body is 850 +/-30 ℃;
(5) printing an encapsulating layer on the surface of the prepared fuse link, wherein the firing film thickness of the encapsulating layer is 5-50 mu m, and the firing temperature of the encapsulating layer is 600 +/-30 ℃;
(6) printing a product mark on the surface of the prepared encapsulating layer;
(7) marking the marked product along the middle of the adjacent electrode for the first strip-shaped splintering, and then coating silver on the end surface of the strip-shaped product, wherein the silver coating depth is 0.1 mm-2 mm, and the silver coating firing temperature is 600 +/-30 ℃;
(8) carrying out secondary particle splintering on the silver-coated strip product;
(9) electroplating the secondary cracked granular product, plating nickel, and then plating lead or tin-lead, wherein the thickness of the nickel layer is more than or equal to 3 mu m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210177941.7A CN114464509A (en) | 2022-02-25 | 2022-02-25 | Surface-mounted thick film fuse structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210177941.7A CN114464509A (en) | 2022-02-25 | 2022-02-25 | Surface-mounted thick film fuse structure and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114464509A true CN114464509A (en) | 2022-05-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210177941.7A Pending CN114464509A (en) | 2022-02-25 | 2022-02-25 | Surface-mounted thick film fuse structure and manufacturing method thereof |
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| Country | Link |
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| CN (1) | CN114464509A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117524810A (en) * | 2024-01-03 | 2024-02-06 | 芯体素(杭州)科技发展有限公司 | Overcurrent protector for integrated circuit |
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| JP2004119105A (en) * | 2002-09-25 | 2004-04-15 | Taiheiyo Seiko Kk | Current-limiting fuse |
| CN1925087A (en) * | 2006-09-04 | 2007-03-07 | 广东风华高新科技股份有限公司 | Thick film type fuse and the manufacture thereof |
| US20080191832A1 (en) * | 2007-02-14 | 2008-08-14 | Besdon Technology Corporation | Chip-type fuse and method of manufacturing the same |
| JP2010244921A (en) * | 2009-04-08 | 2010-10-28 | Taiheiyo Seiko Kk | High-voltage fuse |
| JP2015084328A (en) * | 2014-11-18 | 2015-04-30 | 太平洋精工株式会社 | Manufacturing method for high-voltage fuses, and casing for high-voltage fuses |
| JP2016066623A (en) * | 2015-12-22 | 2016-04-28 | 太平洋精工株式会社 | Fuse element |
| US20160240342A1 (en) * | 2013-10-09 | 2016-08-18 | Dexerials Corporation | Current fuse |
| CN110911254A (en) * | 2019-12-17 | 2020-03-24 | Aem科技(苏州)股份有限公司 | High-voltage power fuse and manufacturing method thereof |
| US20200352026A1 (en) * | 2019-05-02 | 2020-11-05 | Avx Corporation | Surface-Mount Thin-Film Fuse Having Compliant Terminals |
-
2022
- 2022-02-25 CN CN202210177941.7A patent/CN114464509A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004119105A (en) * | 2002-09-25 | 2004-04-15 | Taiheiyo Seiko Kk | Current-limiting fuse |
| CN1925087A (en) * | 2006-09-04 | 2007-03-07 | 广东风华高新科技股份有限公司 | Thick film type fuse and the manufacture thereof |
| US20080191832A1 (en) * | 2007-02-14 | 2008-08-14 | Besdon Technology Corporation | Chip-type fuse and method of manufacturing the same |
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| US20160240342A1 (en) * | 2013-10-09 | 2016-08-18 | Dexerials Corporation | Current fuse |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117524810A (en) * | 2024-01-03 | 2024-02-06 | 芯体素(杭州)科技发展有限公司 | Overcurrent protector for integrated circuit |
| CN117524810B (en) * | 2024-01-03 | 2024-04-05 | 芯体素(杭州)科技发展有限公司 | Overcurrent protector for integrated circuit |
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