CN114447760B - Temperature control optical module and working method thereof - Google Patents
Temperature control optical module and working method thereof Download PDFInfo
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- CN114447760B CN114447760B CN202111487855.8A CN202111487855A CN114447760B CN 114447760 B CN114447760 B CN 114447760B CN 202111487855 A CN202111487855 A CN 202111487855A CN 114447760 B CN114447760 B CN 114447760B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 182
- 238000001514 detection method Methods 0.000 claims description 27
- 238000005057 refrigeration Methods 0.000 claims description 20
- 238000001816 cooling Methods 0.000 claims description 17
- 230000017525 heat dissipation Effects 0.000 claims description 15
- 230000009467 reduction Effects 0.000 claims description 7
- 230000033228 biological regulation Effects 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 description 7
- 238000012544 monitoring process Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 230000002457 bidirectional effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000005679 Peltier effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02453—Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment
Abstract
The invention discloses a temperature control optical module and a working method thereof, wherein the temperature control optical module comprises: the semiconductor laser comprises a semiconductor laser, a laser current driver, a semiconductor refrigerating sheet, a first temperature detector, a second temperature detector and a temperature control circuit, wherein the first temperature detector is suitable for detecting the working temperature of the semiconductor laser, and the second temperature detector is suitable for detecting the ambient temperature of a temperature control light module; the temperature control circuit is suitable for carrying out current adjustment on the semiconductor refrigerating piece according to the detected temperature difference value of the first temperature detector and the second temperature detector so as to cool the semiconductor laser; the laser current driver is adapted to current-modulate the semiconductor laser in accordance with a detected temperature of the first temperature detector to heat the semiconductor laser. The temperature control light module reduces temperature control power consumption and improves temperature control efficiency.
Description
Technical Field
The invention relates to the technical field of optical communication, in particular to a temperature control optical module and a working method thereof.
Background
With the advent of the 5G age, in order to preempt market, large operators have greatly advanced the construction of the 5G network, the frequency of the 5G network is much faster than that of the 4G network, but the greater the frequency is, the faster the attenuation of the base station is, so that the density of the base stations of the 5G network is denser than that of the base stations of the 4G network. Compared with the forward transmission and the backward transmission of the 4G network, the 5G network also increases the intermediate transmission on the basis of the forward transmission and the backward transmission, and the intermediate transmission is used for better controlling the forward transmission base stations which tend to increase. The operators evolved from the traditional fiber direct drive scheme to the wavelength division multiplexing scheme based on cost and fiber resources considerations, which is also the origin of medium wavelength division multiplexing (MetroWave Division Multiplexing, MWDM) and local area network wavelength division multiplexing (LAN WavelengthDivision Multiplexing, LANWDM). Compared to the single wavelength scheme of the 4G base station, the 5G base station introduces coarse wavelength division multiplexing of 12-18 wavelengths. In the case of limited laser wavelength resources, temperature control of the laser becomes important.
The semiconductor laser for optical communication is easily affected by temperature, and a temperature drift phenomenon is generated, so that the emission center wavelength of the semiconductor laser is drifted. In order to control wavelength drift, a semiconductor refrigeration chip (TEC) and an electric drive chip are generally added into a semiconductor laser in a traditional scheme, and the temperature of the semiconductor refrigeration chip is controlled in a bidirectional manner through the electric drive chip, so that the temperature of the semiconductor laser is controlled, and the wavelength drift is controlled indirectly. The specific control principle is as follows: by loading a lower direct current voltage on the two ends of the semiconductor refrigerating sheet, heat flows from one end of the semiconductor refrigerating sheet to the other end, at this time, the temperature of one end of the semiconductor refrigerating sheet is reduced, and the temperature of the other end of the semiconductor refrigerating sheet is increased at the same time, namely, the direction of the heat flow is changed by changing the current direction, so that the heat is conveyed to the other end. Thus, the refrigerating and heating functions can be realized on one semiconductor refrigerating sheet at the same time.
The semiconductor refrigerating sheet is provided with a cold end (cold surface) and a hot end (hot surface), when the semiconductor refrigerating sheet exchanges heat with the side-emitting semiconductor laser, the cold end exchanges heat with the hot end in the same way, and a sufficient temperature gradient cannot be generated, so that the Peltier effect of the semiconductor refrigerating sheet is influenced, the semiconductor refrigerating sheet performs bidirectional temperature control on a single-plane radiator, the parasitic heat capacity problem exists, and the problem of huge power consumption is faced; when the semiconductor refrigerating sheet adopts a PID algorithm to control the temperature, the semiconductor refrigerating sheet needs to pass through the center line of the PID, so that parasitic effect of second heat capacity is brought, and energy waste is huge; the two components are overlapped, so that the temperature control energy requirement of 4-6 times of the power of the temperature controlled device is directly caused, the temperature control power consumption is high, and the efficiency is extremely low.
Disclosure of Invention
In view of the above, the invention provides a temperature control optical module and a working method thereof, which are used for solving the problems of high temperature control power consumption and low temperature control efficiency in the prior art.
The invention provides an optical roof adjusting device, comprising: the semiconductor laser comprises a semiconductor laser, a laser current driver, a semiconductor refrigerating sheet, a first temperature detector, a second temperature detector and a temperature control circuit, wherein the first temperature detector is suitable for detecting the working temperature of the semiconductor laser, and the second temperature detector is suitable for detecting the ambient temperature of a temperature control light module; the temperature control circuit is suitable for carrying out current adjustment on the semiconductor refrigerating piece according to the detected temperature difference value of the first temperature detector and the second temperature detector so as to cool the semiconductor laser; the laser current driver is adapted to current-modulate the semiconductor laser in accordance with a detected temperature of the first temperature detector to heat the semiconductor laser.
Optionally, the first temperature detector is a first thermal resistor, and the second temperature detector is a second thermal resistor.
Optionally, the temperature control circuit is adapted to perform current adjustment on the semiconductor refrigeration piece according to a detected temperature difference between the first temperature detector and the second temperature detector when the detected temperature of the second temperature detector is greater than or equal to a first threshold value, so that the semiconductor laser is cooled; the laser current driver is suitable for modulating the current of the semiconductor laser to heat the semiconductor laser when the detected temperature of the second temperature detector is smaller than or equal to a second threshold value; the first threshold is greater than the second threshold.
Optionally, the method further comprises: the micro control unit is suitable for inputting a temperature reduction adjusting signal to the temperature control circuit when the detection temperature of the second temperature detector is larger than or equal to a first threshold value, and is also suitable for inputting a temperature rise adjusting signal to the laser current driver when the detection temperature of the second temperature detector is smaller than or equal to a second threshold value.
Optionally, the method further comprises: the micro-control unit is further adapted to send a voltage adjustment signal to the Mach-Zehnder driver according to the detected temperature of the second temperature detector, and the Mach-Zehnder driver is adapted to perform voltage swing adjustment according to the voltage adjustment signal to obtain a voltage modulation signal.
Optionally, the micro control unit is adapted to send a voltage adjustment signal to the mach-zehnder driver when the detected temperature of the second temperature detector is less than or equal to a second threshold value, where the voltage adjustment signal is a buck adjustment signal, and the mach-zehnder driver is adapted to reduce a voltage swing according to the buck adjustment signal, and the voltage modulation signal is a buck modulation signal.
Optionally, the micro control unit is adapted to send a voltage adjustment signal to the mach-zehnder driver when the detected temperature of the second temperature detector is greater than or equal to the first threshold value, where the voltage adjustment signal is a boost adjustment signal, and the mach-zehnder driver is adapted to boost a voltage swing according to the boost adjustment signal, and the voltage modulation signal is a boost modulation signal.
Optionally, the method further comprises: an airtight structure in which the semiconductor laser, the semiconductor cooling fin, and the first temperature detector are placed.
Optionally, the method further comprises: and the heat dissipation element is connected with the airtight structure and is suitable for carrying out heat exchange with the airtight structure.
Optionally, the heat dissipation element includes an externally hung heat dissipation housing.
Optionally, the method further comprises: the semiconductor laser and the semiconductor refrigerating sheet are arranged on the auxiliary PCB, and the semiconductor refrigerating sheet is arranged on the side part of the semiconductor laser.
Optionally, the method further comprises: the laser comprises a main PCB, and the laser current driver, the second temperature detector, the temperature control circuit, the Mach-Zehnder driver and the micro-control unit are all arranged on the main PCB.
The invention also provides a working method of the temperature control optical module, which comprises the following steps: providing the temperature control optical module; the temperature control circuit carries out current regulation on the semiconductor refrigeration piece according to the detected temperature difference value of the first temperature detector and the second temperature detector; the laser current driver current-modulates the semiconductor laser according to the detection temperature of the first temperature detector so as to heat the semiconductor laser.
Optionally, the step of the temperature control circuit adjusting the current of the semiconductor refrigeration sheet according to the detected temperature difference between the first temperature detector and the second temperature detector includes: when the detection temperature of the second temperature detector is greater than or equal to a first threshold value, the temperature control circuit adjusts the current of the semiconductor refrigerating piece according to the detection temperature difference value of the first temperature detector and the second temperature detector so as to enable the semiconductor laser to be cooled; the laser current driver performs current modulation on the semiconductor laser according to the detection temperature of the first temperature detector so as to heat the semiconductor laser, and the method comprises the following steps: when the detected temperature of the second temperature detector is less than or equal to a second threshold value, the laser current driver performs current modulation on the semiconductor laser so as to heat the semiconductor laser; the first threshold is greater than the second threshold.
Optionally, the temperature control optical module further comprises a micro control unit; the working method of the temperature control optical module further comprises the following steps: when the detection temperature of the second temperature detector is greater than or equal to a first threshold value, the micro control unit inputs a cooling adjustment signal to the temperature control circuit; when the detected temperature of the second temperature detector is less than or equal to a second threshold value, the micro control unit inputs a temperature rise adjustment signal to the laser current driver.
Optionally, the temperature control optical module further comprises a Mach-Zehnder modulator and a Mach-Zehnder driver; the working method of the temperature control optical module further comprises the following steps: and the micro control unit sends a voltage adjustment signal to the Mach-Zehnder driver according to the detection temperature of the second temperature detector, and the Mach-Zehnder driver is suitable for carrying out voltage swing adjustment according to the voltage adjustment signal to obtain a voltage modulation signal.
Optionally, when the detected temperature of the second temperature detector is less than or equal to a second threshold, the micro control unit sends a voltage adjustment signal to the mach-zehnder driver, where the voltage adjustment signal is a buck adjustment signal, and the mach-zehnder driver is adapted to reduce a voltage swing according to the buck adjustment signal, and the voltage modulation signal is a buck modulation signal; when the detected temperature of the second temperature detector is greater than or equal to a first threshold value, the micro-control unit sends a voltage adjustment signal to the Mach-Zehnder driver, wherein the voltage adjustment signal is a boost adjustment signal, the Mach-Zehnder driver is suitable for increasing the voltage swing according to the boost adjustment signal, and the voltage adjustment signal is a boost modulation signal.
The technical scheme provided by the invention has the following effects:
according to the temperature control optical module provided by the technical scheme of the invention, the semiconductor refrigerating sheet, the first temperature detector, the second temperature detector and the temperature control circuit are arranged. The temperature control circuit is suitable for carrying out current adjustment on the semiconductor refrigerating piece according to the detected temperature difference value of the first temperature detector and the second temperature detector so as to cool the semiconductor laser, namely, when the temperature control optical module is in a high-temperature environment, the temperature control circuit is adopted to carry out current adjustment on the semiconductor refrigerating piece so as to cool the semiconductor laser. The cold end of the semiconductor refrigerating sheet is used for cooling and radiating the semiconductor laser, and the hot end of the semiconductor refrigerating sheet is not required for heating the semiconductor laser, so that the semiconductor refrigerating sheet is unidirectional in temperature control, and can generate higher temperature gradient in the refrigerating process, and thus, the semiconductor laser and packaging structures around the semiconductor laser can be fully radiated. The laser current driver is suitable for carrying out current modulation on the semiconductor laser according to the detection temperature of the first temperature detector so as to heat the semiconductor laser, namely when the temperature control optical module is in a low-temperature environment, the laser current driver is adopted to carry out current modulation on the semiconductor laser so as to heat the semiconductor laser, and the current modulation directly acts on the semiconductor laser, so that low-power consumption heating control can be realized. Different modulation paths are adopted for heating and cooling the semiconductor laser, and a temperature control circuit is not required to control in a low-temperature environment, so that the problem that a central line set by a temperature control program is required to pass is solved, invalid heat control is avoided, and energy waste is reduced. In conclusion, the temperature control power consumption is reduced, and the temperature control efficiency is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a block diagram of a temperature controlled light module according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, or can be communicated inside the two components, or can be connected wirelessly or in a wired way. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
An embodiment of the present invention provides a temperature-controlled optical module, referring to fig. 1, including: the semiconductor laser device comprises a semiconductor laser 10, a laser current driver 40, a semiconductor refrigerating sheet 20, a first temperature detector 80, a second temperature detector 81 and a temperature control circuit 30, wherein the first temperature detector 80 is suitable for detecting the working temperature of the semiconductor laser device 10, and the second temperature detector 81 is suitable for detecting the environment temperature of a temperature light control module; the temperature control circuit 30 is adapted to perform current adjustment on the semiconductor refrigeration sheet 20 according to the detected temperature difference between the first temperature detector 80 and the second temperature detector 81 so as to cool the semiconductor laser 10; the laser current driver 40 is adapted to current-modulate the semiconductor laser 20 according to the detected temperature of the first temperature detector 80 to heat the semiconductor laser 10.
In one embodiment, semiconductor laser 10 may select a continuous wavelength laser. When the detected temperature of the second temperature detector is greater than the second threshold, that is, the low-temperature environment threshold is not triggered, the semiconductor laser 10 is in different temperature intervals, the driving current of the semiconductor laser 10 is nearly constant, and the low-frequency wide-amplitude modulation range of the current is within 5%.
The temperature control optical module further includes: the semiconductor laser 10, the semiconductor refrigeration piece 20 and the first temperature detector 80 are placed in the airtight structure a, so that the semiconductor laser 10, the semiconductor refrigeration piece 20 and the first temperature detector 80 are prevented from being affected by the temperature of the external environment, particularly when the temperature control optical module is in a high-temperature environment, the semiconductor refrigeration piece 20 is used for cooling the semiconductor laser 10, and meanwhile, the semiconductor laser 10 is prevented from being affected by heat transfer in the high-temperature environment outside the airtight structure, so that the refrigeration effect of the semiconductor refrigeration piece 20 is improved. The first temperature detector 80 is also disposed in the airtight structure a, so that the first temperature detector 80 is prevented from being affected by the temperature of the external environment, and thus the first temperature detector 80 can accurately measure the operating temperature of the semiconductor laser 10.
In one embodiment, the airtight structure a is an airtight metal housing. The airtight structure is in an independent heat preservation state.
In order to meet the requirement of coarse wavelength division multiplexing, the temperature control optical module further controls the fluctuation range of the wavelength of the semiconductor laser 10, and further needs to limit the working temperature range of the semiconductor laser 10, that is, the semiconductor laser 10 has an upper temperature limit and a lower temperature limit.
In the present embodiment, the upper temperature limit of the semiconductor laser 10 is controlled by the semiconductor cooling fin 20, the temperature control circuit 30, and the airtight structure a.
The temperature control circuit 30 is adapted to perform current adjustment on the semiconductor cooling fin 20 according to a detected temperature difference between the first temperature detector 80 and the second temperature detector 81 so as to cool down the semiconductor laser 10 when the detected temperature of the second temperature detector 81 is greater than or equal to a first threshold value.
The cold end of the semiconductor refrigerating piece cools and dissipates heat of the semiconductor laser 10, and the semiconductor laser 10 is not required to be heated by the hot end of the semiconductor refrigerating piece, and the semiconductor refrigerating piece 20 is in unidirectional temperature control, so that the semiconductor refrigerating piece 20 reduces heat transfer resistance, parasitic heat capacity and can generate higher temperature gradient in the refrigerating process, and heat dissipation of the semiconductor laser 10 and packaging structures around the semiconductor laser 10 can be fully performed.
For the region with the annual average air temperature larger than the upper limit adjustment threshold temperature, the surface area of the airtight structure A can be increased, so that the temperature difference of the semiconductor laser relative to the environment is reduced, namely the temperature rise is reduced, and further the working time and the power consumption of the semiconductor refrigerating sheet 20 in unit time in the refrigerating process are reduced, and the purpose of energy conservation is achieved. It should be noted that, the temperature rise in this embodiment refers to: the semiconductor laser 10 is at a higher temperature than the environment.
In one embodiment, the upper adjustment threshold temperature is 14 degrees celsius to 16 degrees celsius.
For example, when the annual average air temperature in Guangzhou is 21 to 22 degrees centigrade and the annual average air temperature in Shanghai is 14 to 16 degrees centigrade, the annual average air temperature in these cities can be considered to be greater than the upper limit adjustment threshold temperature.
In this embodiment, the lower temperature limit of the semiconductor laser 10 is controlled by the laser current driver 40 and the surface area of the air-tight structure a.
In this embodiment, the laser current driver 40 is adapted to perform current modulation on the semiconductor laser 10 according to the detected temperature of the first temperature detector 80 so as to heat the semiconductor laser 10, that is, when the temperature-controlled optical module is in a low-temperature environment, the laser current driver 40 is used to perform current modulation on the semiconductor laser 10 so as to heat the semiconductor laser 10, and the current modulation directly acts on the semiconductor laser 10, so that low-power consumption heating control can be realized.
Different modulation paths are adopted for heating and cooling the semiconductor laser 10, and a temperature control circuit is not required to control in a low-temperature environment, so that parasitic effects of heat capacity are avoided, and energy waste is reduced. In conclusion, the temperature control power consumption is reduced, and the temperature control efficiency is improved.
For the region where the annual average air temperature is smaller than the lower limit adjustment threshold temperature, it is necessary to reduce the surface area of the airtight structure a, increase the temperature rise, and further set the difference between the temperature center value of the semiconductor laser 10 and the annual average air temperature of the region reasonably, and further save energy by reducing the active temperature control time length of the laser current driver 40 and the semiconductor cooling fin 20.
In one embodiment, the lower adjustment threshold temperature is less than or equal to 12 degrees celsius.
For example, when the annual average air temperature of the Harbin is 3 to 5 degrees Celsius, the annual average air temperature of the Harbin can be considered to be less than the lower limit adjustment threshold temperature.
The temperature control optical module further includes: and the heat dissipation element B is connected with the airtight structure A and is suitable for heat exchange with the airtight structure A. In one embodiment, the heat dissipating component B includes an externally hung heat dissipating housing.
The temperature control optical module comprises a heat dissipation element B, and is suitable for being applied to areas with higher annual average air temperature, for example, for areas with annual average air temperature larger than the upper limit adjustment threshold temperature, the heat dissipation elements with different surface areas are arranged according to the annual average temperature value difference of different areas, so that the working time and unit time power consumption of the semiconductor refrigeration sheet 20 in the refrigeration process are reduced, the purpose of energy saving is achieved, and particularly for areas with annual average air temperature larger than the upper limit adjustment threshold temperature, the surface area of the arranged heat dissipation element is larger.
For the region with the annual average air temperature being greater than the upper limit adjustment threshold temperature, the temperature difference of the semiconductor laser relative to the environment can be reduced by increasing the surface area of any one or both of the airtight structure A and the heat dissipation element B, namely the temperature rise is reduced, so that the working time and the power consumption of the unit time of the refrigeration process of the semiconductor refrigeration sheet 20 are reduced, and the aim of saving energy is achieved.
In one embodiment, the external heat dissipation housing B has a thin-wall structure, so that the accuracy of temperature control of the semiconductor cooling fin 20 in the heat dissipation process of the semiconductor laser 10 (easy industrial control) can be improved. The heat dissipation element B is also in an independent heat-insulating state.
In this embodiment, the temperature control optical module further includes: a sub PCB board (not shown) located in the airtight structure a, the semiconductor laser 10 and the semiconductor cooling fin 20 are disposed on the sub PCB board, and the semiconductor cooling fin 20 is disposed at a side portion of the semiconductor laser 10. In this way, the semiconductor laser 10 and the semiconductor refrigerating sheet 20 are basically placed on the same plane, the heat conduction resistance is reduced, the parasitic heat capacity is reduced, the semiconductor refrigerating sheet 20 is better helped to refrigerate, and the heat dissipation efficiency is improved.
The thermal resistor measures temperature and a parameter related to temperature by utilizing the characteristic that a resistance value changes with a change in temperature. The thermal resistor is suitable for occasions with higher temperature detection precision requirements. The thermal resistor has the characteristics of large temperature coefficient of resistance, good linearity, stable performance, wide use temperature range, easy processing and the like. In one embodiment, the first temperature detector 80 is a first thermal resistor and the second temperature detector 81 is a second thermal resistor.
The laser current driver 40 is adapted to current-modulate the semiconductor laser 10 to heat the semiconductor laser 10 when the detected temperature of the second temperature detector 81 is less than or equal to a second threshold value. The first threshold is greater than the second threshold.
When the detected temperature of the second temperature detector is greater than or equal to a first threshold value, the environment temperature where the temperature control light module is positioned is indicated to be a high-temperature environment, and the first threshold value is a high-temperature environment threshold value; when the detected temperature of the second temperature detector is smaller than or equal to a second threshold value, the environment temperature where the temperature control light module is located is indicated to be a low-temperature environment, and the second threshold value is a low-temperature environment threshold value.
In a specific embodiment, the first threshold is 50-55 degrees celsius and the second threshold is-10-20 degrees celsius.
The first threshold and the second threshold may also be determined based on specific operating parameters such as the semiconductor laser, the hermetic housing surface area, the thermal resistance of the space environment, and the like.
The temperature control optical module further includes: a micro control unit 50, the micro control unit 50 being adapted to input a temperature decrease adjustment signal to the temperature control circuit 30 when the detected temperature of the second temperature detector 81 is greater than or equal to a first threshold value, the micro control unit 50 being further adapted to input a temperature increase adjustment signal to the laser current driver 40 when the detected temperature of the second temperature detector is less than or equal to a second threshold value. This allows the semiconductor laser 10 to be at a suitable operating temperature.
The temperature control optical module further includes: a mach-zehnder modulator 70 and a mach-zehnder driver 60. The mach-zehnder modulator 70 has two interference arms, and is capable of dividing an input light beam into two equal signals, and respectively entering the two interference arms, wherein the two interference arms are made of electro-optical materials, and the refractive index of each interference arm changes with the magnitude of an externally applied electric signal. Because the refractive index changes of the two interference arms can lead to the change of signal phases, when the output ends of the two branch signal modulators are combined together again, the synthesized optical signal is an interference signal with the intensity changed, which is equivalent to the change of an electric signal converted into the change of the optical signal, and the modulation of the light intensity is realized.
The mach-zehnder modulator 70 modulates the light beam output from the semiconductor laser 10 according to the voltage modulation signal of the mach-zehnder driver 60, to obtain a main signal. Specifically, the semiconductor laser 10 can emit a light beam with an optical modulation signal through modulation of an OAM signal, and the mach-zehnder modulator 70 modulates the light beam with the optical modulation signal according to the voltage modulation signal of the mach-zehnder driver 60, so as to obtain a main signal with the optical modulation signal at the receiving end.
The temperature control optical module further includes: the receiver detector 90, the receiver detector 90 needs better heat dissipation condition, and the receiver detector 90 has higher sensitivity and response time in low temperature environment. The receiver detector 90 is configured to detect the primary signal. The receiving-end detector 90 is a photodetector.
The micro control unit 50 is further adapted to send a voltage adjustment signal to the mach-zehnder driver 60 according to the detected temperature of the second temperature detector, and the mach-zehnder driver 60 is adapted to perform voltage swing adjustment according to the voltage adjustment signal, so as to obtain a voltage modulation signal. So that the receiver probe 90 is in a better operating state.
The micro control unit 50 is adapted to send a voltage adjustment signal to the mach-zehnder driver 60 when the detected temperature of the second temperature detector is less than or equal to the second threshold value, where the voltage adjustment signal is a step-down adjustment signal, and the mach-zehnder driver 60 is adapted to reduce the voltage swing according to the step-down adjustment signal, where the voltage adjustment signal is a step-down modulation signal, so as to further improve the light intensity of the "0" signal "in the main signal received by the receiver detector 90, thereby reducing the extinction ratio of the main signal and protecting the lifetime of the detector. The extinction ratio is the ratio of the optical power P1 of the mach-zehnder modulator 70 when transmitting the all "1" code to the optical power P0 of the all "0" code. Meanwhile, it is necessary to protect the life of the receiver detector 90 by reducing the voltage output of the receiver detector 90.
The micro control unit 50 is adapted to send a voltage adjustment signal to the mach-zehnder driver 60 when the detected temperature of the second temperature detector is greater than or equal to the first threshold value, the voltage adjustment signal being a boost adjustment signal, the mach-zehnder driver 60 being adapted to boost a voltage swing according to the boost adjustment signal, the voltage adjustment signal being a boost adjustment signal. In this way, the light intensity of the "0" signal "in the main signal received by the receiver detector 90 is reduced, so as to improve the extinction ratio of the main signal, and the detection function of the receiver detector can be better at high temperature.
When the detected temperature of the second temperature detector 81 is greater than the second threshold value and less than the first threshold value, the semiconductor refrigeration sheet 20 and the temperature control circuit 30 do not operate. When the detected temperature of the second temperature detector 81 is less than or equal to the second threshold value, the semiconductor refrigeration sheet 20 and the temperature control circuit 30 do not operate.
The temperature control optical module further includes: a main PCB board (not shown) on which the laser current driver 40, the second temperature detector 81, the temperature control circuit 30, the mach-zehnder driver 60, and the micro control unit 50 are all disposed.
The temperature control optical module is further provided with a general input/output interface, through which the micro control unit 50 obtains an externally input optical tone-modulated (OAM) signal, a detection temperature of the first temperature detector 80, and a detection temperature of the second temperature detector 81.
As an alternative implementation manner of the embodiment of the present invention, the temperature control light module further includes: the first monitoring detector is used for monitoring the light intensity value of the output light beam of the semiconductor laser, inputting the light intensity value into the micro control unit, comparing the light intensity value of the output light beam of the semiconductor laser with a first stored value by the micro control unit, and generating a first replacement signal when the light intensity value is lower than the first stored value. The light roof adjusting device further comprises: the second monitoring detector is used for monitoring the light intensity value of the output light beam of the Mach-Zehnder modulator, inputting the light intensity value of the output light beam of the Mach-Zehnder modulator into the micro-control unit, and comparing the light intensity value of the output light beam of the Mach-Zehnder modulator with a second stored value by the micro-control unit, and generating a second replacement signal when the light intensity value is lower than the second stored value.
The first monitoring detector and the semiconductor laser are arranged in the same airtight structure, the second monitoring detector is arranged on one side of the output light of the Mach-Zehnder modulator, and the second monitoring detector and the Mach-Zehnder modulator are both designed in the same chip.
Correspondingly, the embodiment also provides a working method of the temperature control optical module, which comprises the following steps: providing the temperature control optical module; the temperature control circuit carries out current regulation on the semiconductor refrigeration piece according to the detected temperature difference value of the first temperature detector and the second temperature detector; the laser current driver current-modulates the semiconductor laser according to the detection temperature of the first temperature detector so as to heat the semiconductor laser.
The temperature control circuit carries out current adjustment on the semiconductor refrigeration piece according to the detected temperature difference value of the first temperature detector and the second temperature detector, and the method comprises the following steps: when the detection temperature of the second temperature detector is greater than or equal to a first threshold value, the temperature control circuit adjusts the current of the semiconductor refrigerating sheet according to the detection temperature difference value of the first temperature detector and the second temperature detector so as to enable the semiconductor laser to be cooled.
The laser current driver performs current modulation on the semiconductor laser according to the detection temperature of the first temperature detector so as to heat the semiconductor laser, and the method comprises the following steps: when the detected temperature of the second temperature detector is less than or equal to a second threshold value, the laser current driver current-modulates the semiconductor laser to heat the semiconductor laser. The first threshold is greater than the second threshold.
The working method of the temperature control optical module further comprises the following steps: when the detection temperature of the second temperature detector is greater than or equal to a first threshold value, the micro control unit inputs a cooling adjustment signal to the temperature control circuit; when the detected temperature of the second temperature detector is less than or equal to a second threshold value, the micro control unit inputs a temperature rise adjustment signal to the laser current driver. This allows the semiconductor laser to be at a suitable operating temperature.
The Mach-Zehnder driver adjusts a voltage modulation signal sent to the Mach-Zehnder modulator according to the detected temperature of the second temperature detector, and the Mach-Zehnder modulator is suitable for modulating light output by the semiconductor laser according to the voltage modulation signal to obtain a main signal. And the micro control unit sends a voltage adjustment signal to the Mach-Zehnder driver according to the detection temperature of the second temperature detector, and the Mach-Zehnder driver is suitable for carrying out voltage swing adjustment according to the voltage adjustment signal to obtain a voltage modulation signal.
When the detected temperature of the second temperature detector is smaller than or equal to a second threshold value, the micro-control unit sends a voltage adjustment signal to the Mach-Zehnder driver, wherein the voltage adjustment signal is a voltage reduction adjustment signal, the Mach-Zehnder driver is suitable for reducing voltage swing according to the voltage reduction adjustment signal, and the voltage modulation signal is a voltage reduction modulation signal.
When the detected temperature of the second temperature detector is greater than or equal to a first threshold value, the micro-control unit sends a voltage adjustment signal to the Mach-Zehnder driver, wherein the voltage adjustment signal is a boost adjustment signal, the Mach-Zehnder driver is suitable for increasing the voltage swing according to the boost adjustment signal, and the voltage adjustment signal is a boost modulation signal.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (14)
1. A temperature-controlled light module, comprising: the semiconductor laser comprises a semiconductor laser, a laser current driver, a semiconductor refrigerating sheet, a first temperature detector, a second temperature detector and a temperature control circuit, wherein the first temperature detector is suitable for detecting the working temperature of the semiconductor laser, and the second temperature detector is suitable for detecting the ambient temperature of a temperature control light module;
the temperature control circuit is suitable for carrying out current adjustment on the semiconductor refrigerating piece according to the detected temperature difference value of the first temperature detector and the second temperature detector so as to cool the semiconductor laser;
the laser current driver is suitable for carrying out current modulation on the semiconductor laser according to the detection temperature of the first temperature detector so as to heat the semiconductor laser;
further comprises: a micro control unit;
further comprises: the micro-control unit is further adapted to send a voltage adjustment signal to the Mach-Zehnder driver according to the detection temperature of the second temperature detector, and the Mach-Zehnder driver is adapted to perform voltage swing adjustment according to the voltage adjustment signal to obtain a voltage modulation signal;
the device comprises a receiving end detector, a receiving end detector and a receiving end detector, wherein the receiving end detector is used for receiving signals;
the micro control unit is adapted to send a voltage adjustment signal to the mach-zehnder driver when the detected temperature of the second temperature detector is smaller than or equal to a second threshold value, wherein the voltage adjustment signal is a step-down adjustment signal, the mach-zehnder driver is adapted to reduce a voltage swing according to the step-down adjustment signal, and the voltage modulation signal is a step-down modulation signal.
2. The temperature-controlled light module of claim 1 wherein the first temperature detector is a first thermal resistor and the second temperature detector is a second thermal resistor.
3. The temperature-controlled optical module according to claim 1, wherein the temperature control circuit is adapted to current-adjust the semiconductor cooling fin according to a detected temperature difference between the first temperature detector and the second temperature detector to cool the semiconductor laser when the detected temperature of the second temperature detector is greater than or equal to a first threshold value;
the laser current driver is suitable for modulating the current of the semiconductor laser to heat the semiconductor laser when the detected temperature of the second temperature detector is smaller than or equal to a second threshold value;
the first threshold is greater than the second threshold.
4. The temperature-controlled light module according to claim 3, wherein the micro control unit is adapted to input a temperature-decrease adjustment signal to the temperature control circuit when the detected temperature of the second temperature detector is greater than or equal to a first threshold value, and is further adapted to input a temperature-increase adjustment signal to the laser current driver when the detected temperature of the second temperature detector is less than or equal to a second threshold value.
5. The temperature controlled optical module according to claim 4, wherein the micro control unit is adapted to send a voltage adjustment signal to the mach-zehnder driver when the detected temperature of the second temperature detector is greater than or equal to a first threshold, the voltage adjustment signal being a boost adjustment signal, the mach-zehnder driver being adapted to boost a voltage swing according to the boost adjustment signal, the voltage modulation signal being a boost modulation signal.
6. The temperature-controlled light module of claim 1, further comprising: an airtight structure in which the semiconductor laser, the semiconductor cooling fin, and the first temperature detector are placed.
7. The temperature-controlled light module of claim 6, further comprising: and the heat dissipation element is connected with the airtight structure and is suitable for carrying out heat exchange with the airtight structure.
8. The temperature-controlled light module of claim 7 wherein the heat sink member comprises an externally-hung heat sink housing.
9. The temperature-controlled light module of claim 7, further comprising: the semiconductor laser and the semiconductor refrigerating sheet are arranged on the auxiliary PCB, and the semiconductor refrigerating sheet is arranged on the side part of the semiconductor laser.
10. The temperature-controlled light module of claim 5, further comprising: the laser comprises a main PCB, and the laser current driver, the second temperature detector, the temperature control circuit, the Mach-Zehnder driver and the micro-control unit are all arranged on the main PCB.
11. A method of operating a temperature controlled optical module, comprising:
providing a temperature controlled light module according to any one of claims 1 to 10;
the temperature control circuit carries out current regulation on the semiconductor refrigeration piece according to the detected temperature difference value of the first temperature detector and the second temperature detector;
the laser current driver current-modulates the semiconductor laser according to the detection temperature of the first temperature detector to heat the semiconductor laser
The temperature control optical module further comprises a micro control unit;
the temperature control optical module comprises a receiving end detector, wherein the receiving end detector is used for receiving signals;
the temperature control optical module further comprises a Mach-Zehnder modulator and a Mach-Zehnder driver;
the working method of the temperature control optical module further comprises the following steps: the micro control unit sends a voltage adjustment signal to the Mach-Zehnder driver according to the detection temperature of the second temperature detector, and the Mach-Zehnder driver is suitable for carrying out voltage swing adjustment according to the voltage adjustment signal to obtain a voltage modulation signal;
when the detected temperature of the second temperature detector is smaller than or equal to a second threshold value, the micro-control unit sends a voltage adjustment signal to the Mach-Zehnder driver, wherein the voltage adjustment signal is a voltage reduction adjustment signal, the Mach-Zehnder driver is suitable for reducing voltage swing according to the voltage reduction adjustment signal, and the voltage modulation signal is a voltage reduction modulation signal.
12. The method according to claim 11, wherein the step of the temperature control circuit performing current adjustment on the semiconductor cooling sheet according to a detected temperature difference between the first temperature detector and the second temperature detector comprises: when the detection temperature of the second temperature detector is greater than or equal to a first threshold value, the temperature control circuit adjusts the current of the semiconductor refrigerating piece according to the detection temperature difference value of the first temperature detector and the second temperature detector so as to enable the semiconductor laser to be cooled;
the laser current driver performs current modulation on the semiconductor laser according to the detection temperature of the first temperature detector so as to heat the semiconductor laser, and the method comprises the following steps: when the detected temperature of the second temperature detector is less than or equal to a second threshold value, the laser current driver performs current modulation on the semiconductor laser so as to heat the semiconductor laser;
the first threshold is greater than the second threshold.
13. The method for operating a temperature controlled light module of claim 12,
the working method of the temperature control optical module further comprises the following steps: when the detection temperature of the second temperature detector is greater than or equal to a first threshold value, the micro control unit inputs a cooling adjustment signal to the temperature control circuit; when the detected temperature of the second temperature detector is less than or equal to a second threshold value, the micro control unit inputs a temperature rise adjustment signal to the laser current driver.
14. The method for operating a temperature controlled light module of claim 13,
when the detected temperature of the second temperature detector is greater than or equal to a first threshold value, the micro-control unit sends a voltage adjustment signal to the Mach-Zehnder driver, wherein the voltage adjustment signal is a boost adjustment signal, the Mach-Zehnder driver is suitable for increasing the voltage swing according to the boost adjustment signal, and the voltage adjustment signal is a boost modulation signal.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5943352A (en) * | 1997-03-25 | 1999-08-24 | Mci Communication Corporation | External cavity laser with optically switched tuning mechanism |
| JP2010118433A (en) * | 2008-11-12 | 2010-05-27 | Furukawa Electric Co Ltd:The | Optical module and method for controlling the same |
| JP2012119482A (en) * | 2010-11-30 | 2012-06-21 | Sumitomo Electric Ind Ltd | Wavelength variable laser device and control method of the same |
| CN103236644A (en) * | 2013-04-18 | 2013-08-07 | 青岛海信宽带多媒体技术有限公司 | Method and device for regulating working temperature of small-packaged hot pluggable optical module |
| CN105102085A (en) * | 2014-03-06 | 2015-11-25 | 华为技术有限公司 | Method and device for controlling operating temperature of optical assembly, optical assembly and optical network system |
| CN106292787A (en) * | 2015-06-09 | 2017-01-04 | 青岛海信宽带多媒体技术有限公司 | Optical module and laser temperature control method thereof |
| CN107703590A (en) * | 2017-09-27 | 2018-02-16 | 青岛海信宽带多媒体技术有限公司 | A kind of optical module and its temprature control method |
| CN110879215A (en) * | 2019-12-16 | 2020-03-13 | 苏州同阳科技发展有限公司 | Tunable laser industrial waste gas online monitoring device and method based on reference compensation |
| CN113574432A (en) * | 2019-03-15 | 2021-10-29 | 华为技术有限公司 | Light emission assembly, optical module and optical line terminal |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7184671B2 (en) * | 2003-09-16 | 2007-02-27 | Opnext, Inc. | Optical transmission controller |
| JP2010092904A (en) * | 2008-10-03 | 2010-04-22 | Nec Corp | Optical module |
| DE112017006195T5 (en) * | 2016-12-08 | 2019-10-02 | Sumitomo Electric Industries, Ltd. | METHOD FOR CONTROLLING AN OPTICAL MODULE, OPTICAL MODULE UNIT AND OPTICAL MODULE |
-
2021
- 2021-12-07 CN CN202111487855.8A patent/CN114447760B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5943352A (en) * | 1997-03-25 | 1999-08-24 | Mci Communication Corporation | External cavity laser with optically switched tuning mechanism |
| JP2010118433A (en) * | 2008-11-12 | 2010-05-27 | Furukawa Electric Co Ltd:The | Optical module and method for controlling the same |
| JP2012119482A (en) * | 2010-11-30 | 2012-06-21 | Sumitomo Electric Ind Ltd | Wavelength variable laser device and control method of the same |
| CN103236644A (en) * | 2013-04-18 | 2013-08-07 | 青岛海信宽带多媒体技术有限公司 | Method and device for regulating working temperature of small-packaged hot pluggable optical module |
| CN105102085A (en) * | 2014-03-06 | 2015-11-25 | 华为技术有限公司 | Method and device for controlling operating temperature of optical assembly, optical assembly and optical network system |
| CN106292787A (en) * | 2015-06-09 | 2017-01-04 | 青岛海信宽带多媒体技术有限公司 | Optical module and laser temperature control method thereof |
| CN107703590A (en) * | 2017-09-27 | 2018-02-16 | 青岛海信宽带多媒体技术有限公司 | A kind of optical module and its temprature control method |
| CN113574432A (en) * | 2019-03-15 | 2021-10-29 | 华为技术有限公司 | Light emission assembly, optical module and optical line terminal |
| CN110879215A (en) * | 2019-12-16 | 2020-03-13 | 苏州同阳科技发展有限公司 | Tunable laser industrial waste gas online monitoring device and method based on reference compensation |
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|---|---|
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