CN115001575B - Device and method for measuring chip-level optical transmission performance parameters - Google Patents
Device and method for measuring chip-level optical transmission performance parameters Download PDFInfo
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- CN115001575B CN115001575B CN202210904045.6A CN202210904045A CN115001575B CN 115001575 B CN115001575 B CN 115001575B CN 202210904045 A CN202210904045 A CN 202210904045A CN 115001575 B CN115001575 B CN 115001575B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/07—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
- H04B10/075—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal
- H04B10/079—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal using measurements of the data signal
- H04B10/0795—Performance monitoring; Measurement of transmission parameters
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/07—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
- H04B10/075—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal
- H04B10/079—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal using measurements of the data signal
- H04B10/0795—Performance monitoring; Measurement of transmission parameters
- H04B10/07955—Monitoring or measuring power
Abstract
The application relates to a device and a method for measuring chip-level optical transmission performance parameters, wherein the device comprises: the power supply module is used for providing working voltage for the modulator and the heater on the chip to be tested; the signal generator is connected with the modulator and is used for applying a fluctuation signal with a preset frequency to the modulator; the adjusting module is used for adjusting the power of the heater and the driving current of the light source of the chip to be tested at a preset environment temperature; and the measuring module is used for receiving the optical signal output after modulation by the modulator and determining the extinction ratio of the chip to be tested under different heater powers and the optical modulation amplitude of the chip to be tested under different light source driving currents based on the optical signal. The high-speed performance of the device can be tested at the chip level, the measurement cost is low, the efficiency is high, and qualified chips can be screened in the early stage of production, so that the loss of the later-stage packaging process is reduced, and the yield of the optical module can be improved.
Description
Technical Field
The present application relates to the field of optical communication technologies, and in particular, to a device and a method for measuring chip-level optical transmission performance parameters.
Background
In a current optical communication network, an optical module is one of important devices in optical fiber communication, and is required to have high-quality and stable performance. However, performance measurement of the optical module is currently performed by connecting the assembled optical module into a high-speed measurement system, and high-speed performance debugging of the device is also performed after the packaging is completed.
The existing optical module performance measurement method is limited to directly using a high-speed transmission signal (eye pattern) to measure the quick transmission performance of the optical module, and the measurement equipment used by the eye pattern measurement method is high in price and needs to consume a large amount of time and cost investment.
Therefore, it is desirable to provide an improved measurement method to reduce the test cost, improve the test efficiency, and improve the yield of the optical module.
Disclosure of Invention
The embodiment of the application provides a device and a method for measuring chip-level optical transmission performance parameters, which can be used for testing the high-speed performance of a device at the chip level, have low measurement cost and high efficiency, and can realize screening of qualified chips in the early stage of production, thereby reducing the loss in the later stage packaging process and improving the yield of optical modules. Meanwhile, an automatic control data platform can be provided for the later-stage finished product module through analysis and processing of the measurement parameters.
In one aspect, an embodiment of the present application provides a device for measuring chip-level optical transmission performance parameters, including:
the power module is used for providing working voltage for the modulator and the heater on the chip to be tested;
the signal generator is connected with the modulator and is used for applying a fluctuation signal with a preset frequency to the modulator;
the adjusting module is used for adjusting the power of the heater and the driving current of the light source of the chip to be detected at a preset environment temperature;
and the measuring module is used for receiving the optical signal output after modulation by the modulator and determining the extinction ratio of the chip to be tested under different heater powers and the optical modulation amplitude of the chip to be tested under different light source driving currents based on the optical signal.
In some possible embodiments, the device further comprises a multiplexing probe; the light source of the chip to be tested comprises a laser arranged on the chip to be tested; the power supply module comprises a laser driving power supply and a heater driving power supply;
and the multi-path probe is used for connecting the signal generator with the modulator, connecting the laser driving power supply with the laser and connecting the heater driving power supply with the heater.
In some possible embodiments, a laser power monitor is arranged on the chip to be tested; the laser power monitor is used for determining the optical signal power output by the laser;
and the multi-path probe is also used for being connected with a laser power monitor to obtain the optical signal power output by the laser.
In some possible embodiments, the measurement module comprises a photoelectric conversion sub-module and a performance parameter measurement sub-module;
the input end of the photoelectric conversion submodule corresponds to the output end of the modulator, and the photoelectric conversion submodule is used for converting an optical signal output by the modulator into an electric signal;
the performance parameter measuring submodule comprises an oscilloscope and a calculating unit, wherein the oscilloscope is used for displaying an electric signal image; the calculating unit is used for determining the optical power parameter based on the electric signal image.
In some possible embodiments, the photoelectric conversion sub-module includes a photosensor;
or;
the photoelectric conversion submodule comprises a coupling optical fiber, an optical splitter, an optical attenuator, an optical receiver and a power detector, wherein the coupling optical fiber, the optical splitter, the optical attenuator and the optical receiver are sequentially connected, and the power detector is connected with the output end of the optical splitter.
In some possible embodiments, the apparatus further comprises a measurement platform for holding the chip to be tested;
the measuring platform comprises a temperature regulating device, and the temperature regulating device enables the chip to be measured to be at a preset environment temperature.
On the other hand, the embodiment of the application also provides a chip-level optical transmission performance parameter measuring method, which is applied to a chip-level optical transmission performance parameter measuring device, and the device comprises a power supply module, a signal generator, an adjusting module and a measuring module; the method comprises the following steps:
providing working voltage to a modulator and a heater on a chip to be tested through a power supply module;
applying a fluctuation signal with a preset frequency to a modulator through a signal generator;
adjusting the power of the heater and the driving current of a light source of the chip to be detected at a preset environmental temperature through an adjusting module;
receiving an optical signal which is output after modulation by a modulator through a measuring module; and determining the extinction ratio of the chip to be tested under different heater powers and the light modulation amplitude of the chip to be tested under different light source driving currents based on the optical signal.
In some possible embodiments, receiving the optical signal output after being modulated by the modulator, and determining the extinction ratio of the chip to be tested under different heater powers and the optical modulation amplitude of the chip to be tested under different light source driving currents based on the optical signal includes:
receiving an optical signal output by a modulator at a preset ambient temperature, current heater power and current light source driving current;
determining an optical power parameter of the modulator output based on the optical signal;
determining the extinction ratio of the chip to be tested under the current heater power and the light modulation amplitude of the chip to be tested under the current light source driving current based on the light power parameter;
and based on the adjusted current heater power and the adjusted current light source driving current, executing the steps again to obtain the extinction ratio of the chip to be tested under different heater powers and the light modulation amplitude of the chip to be tested under different light source driving currents.
In some possible embodiments, the predetermined ambient temperature range includes 5 ℃ to 80 ℃.
In some possible embodiments, the method further comprises:
adjusting the preset environment temperature through an adjusting module;
determining a relation curve of the extinction ratio of the chip to be tested and the heater power and a relation curve of the light modulation amplitude of the chip to be tested and the light source driving current under different preset environmental temperatures through the measuring module.
The device and the method for measuring the chip-level optical transmission performance parameters have the following beneficial effects that:
the device and the method for measuring the chip-level optical transmission performance parameters can be used for testing the transmission performance of a chip waiting for testing of a high-speed light emitting chip, and testing the high-speed performance of a device at the chip level is realized, so that qualified chips can be screened at the early stage of production, the loss of a later-stage packaging process can be reduced, and the yield of the final device is improved; and the capital investment of the traditional measuring method on measuring equipment can be reduced, the whole measuring process is simple and quick, and the production cycle of the chip can be accelerated.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a device for measuring chip-level optical transmission performance parameters according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a device for measuring chip-level optical transmission performance parameters according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of a measurement module according to an embodiment of the present disclosure;
FIG. 4 is a schematic diagram of an electrical signal image provided by an embodiment of the present application;
fig. 5 is a schematic flowchart of a method for measuring chip-level optical transmission performance parameters according to an embodiment of the present disclosure;
fig. 6 is a schematic flowchart of a method for determining an extinction ratio of a chip to be tested under different heater powers and an optical modulation amplitude of the chip to be tested under different light source driving currents according to an embodiment of the present application;
FIG. 7 is a diagram illustrating a relationship curve between an extinction ratio of a chip under test and a heater power according to an embodiment of the present disclosure;
fig. 8 is a schematic diagram of a relationship curve between a light modulation amplitude of a chip to be tested and a light source driving current provided in an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making creative efforts shall fall within the protection scope of the present application.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or server that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a chip-level optical transmission performance parameter measuring apparatus according to an embodiment of the present disclosure, where the chip-level optical transmission performance parameter measuring apparatus includes:
the power module 1 is used for providing working voltage for the modulator 01 and the heater 02 on the chip to be tested;
the signal generator 2 is connected with the modulator 01 and is used for applying a fluctuation signal with a preset frequency to the modulator 01;
the adjusting module 3 is used for adjusting the power of the heater 02 and adjusting the driving current of the light source of the chip to be detected at a preset environmental temperature;
and the measuring module 4 is used for receiving the optical signal output after being modulated by the modulator 01 and determining the extinction ratio of the chip to be tested under different heater powers and the optical modulation amplitude of the chip to be tested under different light source driving currents based on the optical signal.
According to the chip-level optical transmission performance parameter measuring device provided by the embodiment of the application, a fluctuation signal with a preset frequency is applied to a modulator 01 on a chip to be measured through a signal generator 2, and the power of a heater 02 and the driving current of a light source of the chip to be measured are adjusted through an adjusting module 3 at a preset environment temperature, wherein the light source can be emitted by a component of the chip to be measured or can be emitted by a light source arranged outside the chip to be measured; and measuring optical signals output by the modulator under different heater powers and different light source driving currents by the measuring module 4, and determining the extinction ratio and the optical modulation amplitude of the chip to be measured based on the optical signals.
In some possible embodiments, as shown in fig. 2, the apparatus for measuring chip-scale optical transmission performance parameters provided in the embodiments of the present application further includes a multi-channel probe 5; the light source of the chip to be tested comprises a laser 03 arranged on the chip to be tested; the power module 1 comprises a laser driving power supply 11 and a heater driving power supply 12;
the multi-channel probe 5 is used for connecting the signal generator 2 to the modulator 01, connecting the laser drive power supply 11 to the laser 03, and connecting the heater drive power supply 12 to the heater 02.
Further, in some possible embodiments, as shown in fig. 2, a laser power monitor 04 is further disposed on the chip to be tested; the laser power monitor 04 is used for determining the power of the optical signal output by the laser 03;
the multi-channel probe 5 is further configured to be connected to the laser power monitor 04 to obtain the optical signal power output by the laser 03.
Wherein, the multi-channel probe 5 is driven by an alternating current signal, and the working frequency range is 10KHz to 100MHz.
In the above embodiment, the chip to be measured is a light emitting chip, and in the measurement process, the laser 03 itself is used as a light source, one path of the optical signal output by the laser 03 is transmitted to the modulator 01 through the waveguide, and the other path of the optical signal is led to the laser power monitor 04 to monitor the optical power of the optical signal output by the laser 03; the modulator 01 modulates the optical signal output by the laser 03 according to the wobble signal provided by the signal generator 2, and then outputs the modulated optical signal to the measuring module 4 through the output end.
In some possible embodiments, the preset frequency of the fluctuating signal provided by the signal generator 2 to the modulator 01 is in the range of 1-100MHz.
In some possible embodiments, as shown in fig. 3, the measurement module 4 includes a photoelectric conversion sub-module 41 and a performance parameter measurement sub-module 42;
the input end of the photoelectric conversion submodule 41 corresponds to the output end of the modulator, and the photoelectric conversion submodule 41 is used for converting an optical signal output by the modulator into an electrical signal;
the performance parameter measuring submodule 42 comprises an oscilloscope and a calculating unit, wherein the oscilloscope is used for displaying an electric signal image; the calculating unit is used for determining the optical power parameter based on the electric signal image.
The optical power parameter is a power value of an optical signal output by the modulator.
In a specific embodiment, the photoelectric conversion sub-module 41 includes a photosensor;
or; in another specific embodiment, the above-mentioned photoelectric conversion sub-module 41 includes a coupling optical fiber, an optical splitter, an optical attenuator, an optical receiver, and a power detector connected to an output end of the optical splitter. The variable optical attenuator adjusts the intensity of the optical power signal entering the optical receiver, so that the oscilloscope is in an optimal response sensitivity range. The attenuation range of the variable optical attenuator is 0 to 60dB, and the precision is 0.2dB.
Further, the measurement module 4 may further include a 3-axis electric dimming platform, and the 3-axis electric dimming platform is used to adjust the position of the optical power probe in the photoelectric conversion sub-module 41 to ensure that the emergent light irradiates the center of the sensitive surface of the optical detector.
As shown in fig. 4, fig. 4 is a schematic diagram of an electrical signal image provided by an embodiment of the present application; the upper part of fig. 4 shows the fluctuation signal applied by the signal generator 2 to the modulator 01, and the lower part of fig. 4 shows the electrical signal image displayed by the oscilloscope, which is also the optical power image output by the modulator.
The Extinction Ratio (ER) is defined as: the optical power is at the ratio of the average power at logic "1" to the average power at logic "0". The calculation method is shown in the following formula (1):
ER= 10log（P1/ P0）……（1）
the Optical Modulation Amplitude (OMA) is defined as: the optical power is at the difference between the average power at logic "1" and the average power at logic "0". The calculation method is shown in the following formula (2):
OMA = P1- P0……（2）
where P1 is the average optical power at which the optical power is at logic "1" and P0 is the average optical power at which the optical power is at logic "0". Both P1 and P0 can be read from the electrical signal image.
Therefore, in a specific embodiment, the calculating unit is configured to read the average optical power P1 with the optical power at logic "1" and the average optical power P0 with the optical power at logic "0" from the electrical signal image, and further, determine the extinction ratio and the optical modulation amplitude of the chip under test according to the above formula (1) and formula (2).
In some possible embodiments, the device for measuring chip-level optical transmission performance parameters provided in the embodiments of the present application may further include a measurement platform for fixing a chip to be measured; the measuring platform comprises a temperature regulating device, and the temperature regulating device enables the chip to be measured to be at a preset environment temperature. The temperature control range of the temperature control device comprises 5-80 ℃.
In the actual measurement process, fixing the chip to be measured on a measurement platform, and adjusting the environmental temperature through a temperature adjusting device of the measurement platform to enable the chip to be measured to be at a preset environmental temperature; different preset environment temperatures can be adjusted for multiple times to measure the performance parameters of the chip to be measured at different environment temperatures.
In summary, the device for measuring chip-level optical transmission performance parameters provided by the embodiment of the present application can be used for testing the transmission performance of a chip waiting for testing of a high-speed light emitting chip, and the high-speed performance of a device can be tested at the chip level, so that qualified chips can be screened at the early stage of production, thereby reducing the loss in the later stage of packaging and improving the yield of the final device; and the capital investment of the traditional measuring method on measuring equipment can be reduced, the whole measuring process is simple and quick, and the production cycle of the chip can be accelerated.
Embodiments of a method for measuring chip-level optical transmission performance parameters provided in the embodiments of the present application are described below.
Referring to fig. 5, fig. 5 is a schematic flow chart illustrating a method for measuring chip-level optical transmission performance parameters according to an embodiment of the present disclosure. The chip-level optical transmission performance parameter measuring method can be applied to the chip-level optical transmission performance parameter measuring device introduced in the above embodiment, and the device comprises a power supply module, a signal generator, an adjusting module and a measuring module; as shown in fig. 5, the method for measuring the chip-level optical transmission performance parameter may include the steps of:
s501: providing working voltage to a modulator and a heater on a chip to be tested through a power module;
s503: applying a fluctuation signal with a preset frequency to a modulator through a signal generator;
s505: adjusting the power of the heater and the driving current of a light source of the chip to be detected at a preset environmental temperature through an adjusting module;
s507: receiving an optical signal which is output after modulation by a modulator through a measuring module;
s509: and determining the extinction ratio of the chip to be tested under different heater powers and the light modulation amplitude of the chip to be tested under different light source driving currents based on the optical signal.
In some possible embodiments, the receiving the optical signal modulated by the modulator and then outputting the optical signal, and determining the extinction ratio of the chip under test under different heater powers and the optical modulation amplitude of the chip under test under different light source driving currents based on the optical signal may include the following steps as shown in fig. 6:
s601: receiving an optical signal output by a modulator at a preset ambient temperature, current heater power and current light source driving current;
s603: determining an optical power parameter output by the modulator based on the optical signal;
s605: determining the extinction ratio of the chip to be tested under the current heater power and the light modulation amplitude of the chip to be tested under the current light source driving current based on the light power parameter;
s607: and executing the steps S601-S605 again based on the adjusted current heater power and the adjusted current light source driving current to obtain the extinction ratio of the chip to be tested under different heater powers and the light modulation amplitude of the chip to be tested under different light source driving currents.
As shown in fig. 7, fig. 7 is a schematic diagram of a relation curve between an extinction ratio of a chip to be tested and a heater power provided in an embodiment of the present application. At a certain preset environment temperature, adjusting the heater power, for example, in the process of increasing from 0mW to 30mW, measuring an optical signal output by the modulator under the specific heater power, calculating an extinction ratio of the chip to be tested under the specific heater power, and drawing a relation curve between the extinction ratio of the chip to be tested and the heater power based on the calculation result; the extinction ratio is continuously monitored, as can be seen from fig. 7, the extinction ratio rises with the rise of the heater power, when the extinction ratio reaches the expected extinction ratio, the corresponding heater power is recorded, and the heater power represents the heater power required by the chip to be tested when the chip to be tested meets the performance requirement.
Referring to fig. 8, fig. 8 is a schematic diagram illustrating a relationship curve between a light modulation amplitude of a chip to be tested and a light source driving current according to an embodiment of the present disclosure. Under a certain preset environment temperature, adjusting the light source driving current, for example, the figure shows the stage change process of the light source driving current from 95mA to 135mA, measuring the light signal output by the modulator under the specific light source driving current, calculating the light modulation amplitude of the chip to be detected under the specific light source driving current, and drawing the relation curve between the light modulation amplitude of the chip to be detected and the light source driving current based on the calculation result; the light modulation amplitude is continuously monitored, as can be seen from fig. 8, the light modulation amplitude rises with the rise of the light source driving current, when the light modulation amplitude reaches the desired light modulation amplitude, the corresponding light source driving current is recorded, and the light source driving current represents the light source driving current required when the chip to be tested meets the performance requirement.
In some possible embodiments, all temperature environments that the chip may face during actual use are considered, and the method of the embodiment of the application may further adjust the preset environment temperature through the adjusting module; wherein the range of the preset environment temperature comprises 5-80 ℃; and determining a relation curve of the extinction ratio of the chip to be tested and the power of the heater and a relation curve of the light modulation amplitude of the chip to be tested and the driving current of the light source at different preset ambient temperatures by using the measuring module. Thus, the performance curve of the chip to be tested in the whole temperature range can be obtained.
The method for measuring the chip-level optical transmission performance parameters can be used for testing the high-speed performance of the device at the chip level, and is low in measurement cost and high in efficiency. The method and the device in the embodiment of the present application are based on the same application concept, so that the embodiment of the method item of the present application can achieve the same beneficial effects as the embodiment of the device item, and are not described again here.
It should be noted that: the sequence of the embodiments of the present application is only for description, and does not represent the advantages or disadvantages of the embodiments. And specific embodiments thereof have been described above. Other embodiments are within the scope of the following claims. In some cases, the actions or steps recited in the claims may be performed in a different order than in the embodiments and still achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown, or sequential order, to achieve desirable results.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments.
The above description is only a preferred embodiment of the present application and should not be taken as limiting the present application, and any modifications, equivalents, improvements and the like that are made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (9)
1. A chip-level optical transmission performance parameter measuring apparatus, comprising:
the power supply module is used for providing working voltage for the modulator and the heater on the chip to be tested;
the signal generator is connected with the modulator and is used for applying a fluctuation signal with a preset frequency to the modulator;
the adjusting module is used for adjusting the power of the heater and the driving current of the light source of the chip to be detected at a preset environment temperature;
the measuring module is used for receiving the optical signal which is modulated by the modulator and then output, and determining the extinction ratio of the chip to be tested under different heater powers and the optical modulation amplitude of the chip to be tested under different light source driving currents based on the optical signal;
the measurement module is also used for determining a relation curve of the extinction ratio and the heater power based on the extinction ratios of the chips to be tested under different heater powers; determining expected heater power corresponding to the expected extinction ratio based on the relation curve of the extinction ratio and the heater power; the expected heater power represents the heater power required by the chip to be tested when the chip to be tested meets the performance requirement;
the measuring module is also used for determining a relation curve of the light modulation amplitude and the light source driving current based on the light modulation amplitude of the chip to be measured under different light source driving currents; determining expected light source driving current corresponding to the expected light modulation amplitude based on a relation curve of the light modulation amplitude and the light source driving current; the expected light source driving current represents the light source driving current required by the chip to be tested when the chip to be tested meets the performance requirement.
2. The apparatus of claim 1, further comprising a multiplexing probe; the light source of the chip to be tested comprises a laser arranged on the chip to be tested; the power supply module comprises a laser driving power supply and a heater driving power supply;
the multi-path probe is used for connecting the signal generator with the modulator, connecting the laser driving power supply with the laser and connecting the heater driving power supply with the heater.
3. The apparatus according to claim 2, wherein a laser power monitor is disposed on the chip to be tested; the laser power monitor is used for determining the optical signal power output by the laser;
the multi-path probe is also used for being connected with the laser power monitor to obtain the optical signal power output by the laser.
4. The chip-scale optical transmission performance parameter measuring device according to claim 1, wherein the measuring module includes a photoelectric conversion sub-module and a performance parameter measuring sub-module;
the input end of the photoelectric conversion sub-module corresponds to the output end of the modulator, and the photoelectric conversion sub-module is used for converting the optical signal output by the modulator into an electric signal;
the performance parameter measuring submodule comprises an oscilloscope and a calculating unit, wherein the oscilloscope is used for displaying an electric signal image; the calculation unit is used for determining an optical power parameter based on the electrical signal image.
5. The apparatus of claim 4, wherein the optoelectronic conversion sub-module comprises a photoelectric sensor;
or;
the photoelectric conversion sub-module comprises a coupling optical fiber, an optical splitter, an optical attenuator, an optical receiver and a power detector, wherein the coupling optical fiber, the optical splitter, the optical attenuator and the optical receiver are sequentially connected, and the power detector is connected with the output end of the optical splitter.
6. The apparatus of claim 1, further comprising a measuring platform for fixing the chip under test;
the measuring platform comprises a temperature regulating device, and the temperature regulating device enables the chip to be measured to be at the preset environment temperature.
7. A chip-level optical transmission performance parameter measuring method is characterized by being applied to a chip-level optical transmission performance parameter measuring device, wherein the device comprises a power supply module, a signal generator, an adjusting module and a measuring module; the method comprises the following steps:
providing working voltage to a modulator and a heater on a chip to be tested through the power supply module;
applying a fluctuating signal of a preset frequency to the modulator by the signal generator;
adjusting the power of the heater and the driving current of the light source of the chip to be detected at a preset environmental temperature through the adjusting module;
receiving, by the measurement module, an optical signal output after being modulated by the modulator; determining the extinction ratio of the chip to be tested under different heater powers and the light modulation amplitude of the chip to be tested under different light source driving currents based on the optical signal;
determining a relation curve of the extinction ratio and the heater power based on the extinction ratios of the chips to be tested under different heater powers;
determining expected heater power corresponding to the expected extinction ratio based on the relation curve of the extinction ratio and the heater power; the expected heater power represents the heater power required by the chip to be tested when the chip to be tested meets the performance requirement;
determining a relation curve of the light modulation amplitude and the light source driving current based on the light modulation amplitude of the chip to be tested under different light source driving currents;
determining expected light source driving current corresponding to the expected light modulation amplitude based on the relation curve of the light modulation amplitude and the light source driving current; the expected light source driving current represents the light source driving current required by the chip to be tested when the chip to be tested meets the performance requirement.
8. The method for measuring the chip level optical transmission performance parameters according to claim 7, wherein the receiving the optical signal modulated by the modulator and then outputting the optical signal, and determining the extinction ratio of the chip to be tested under different heater powers and the optical modulation amplitude of the chip to be tested under different light source driving currents based on the optical signal comprises:
receiving an optical signal output by the modulator under the preset environment temperature, the current heater power and the current light source driving current;
determining an optical power parameter output by the modulator based on the optical signal;
determining the extinction ratio of the chip to be tested under the current heater power and the light modulation amplitude of the chip to be tested under the current light source driving current based on the light power parameter;
and based on the adjusted current heater power and the adjusted current light source driving current, executing the steps again to obtain the extinction ratio of the chip to be tested under different heater powers and the light modulation amplitude of the chip to be tested under different light source driving currents.
9. The method of claim 7, wherein the predetermined ambient temperature ranges from 5 ℃ to 80 ℃.
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Citations (2)
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|---|---|---|---|---|
| CN106253988A (en) * | 2013-05-24 | 2016-12-21 | 青岛海信宽带多媒体技术有限公司 | Optical module and operating temperature control method thereof |
| CN114447760A (en) * | 2021-12-07 | 2022-05-06 | 金雷 | Temperature control optical module and working method thereof |
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| CN106253988A (en) * | 2013-05-24 | 2016-12-21 | 青岛海信宽带多媒体技术有限公司 | Optical module and operating temperature control method thereof |
| CN114447760A (en) * | 2021-12-07 | 2022-05-06 | 金雷 | Temperature control optical module and working method thereof |
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