CN114447103B - 一种具有逆向导通能力的GaN RC-HEMT - Google Patents

一种具有逆向导通能力的GaN RC-HEMT Download PDF

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CN114447103B
CN114447103B CN202210097619.3A CN202210097619A CN114447103B CN 114447103 B CN114447103 B CN 114447103B CN 202210097619 A CN202210097619 A CN 202210097619A CN 114447103 B CN114447103 B CN 114447103B
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罗小蓉
张�成
廖德尊
邓思宇
杨可萌
贾艳江
魏杰
郗路凡
孙涛
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University of Electronic Science and Technology of China
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Abstract

本发明属于半导体技术领域，涉及一种具有逆向导通能力的GaN RC‑HEMT器件。本发明在传统GaN HEMT器件的基础上引入了MOS型沟道二极管作为续流二极管，漏源负压使槽型源极结构的侧壁形成电子积累层，纵向续流沟道开启，电流从阳极出发经过纵向沟道后通过势垒层二下方的横向2DEG通路到达阴极，反向续流主通路的导通压降基本不受栅驱动负压的影响；当漏源负压达到一定值时，传统HEMT的反向续流通路即势垒层一下方的横向2DEG沟道开启，进一步增加反向导通电流。此外多沟道结构形成的极化结也有利于提升器件耐压，解决了集成肖特基续流阻断时泄漏电流大且温度影响稳定性的问题。

Description

一种具有逆向导通能力的GaN RC-HEMT
技术领域
本发明属于功率半导体技术领域，具体是指一种具有逆向导通能力的GaN RC-HEMT(High Electron Mobility Transistor)器件。
背景技术
GaN HEMT比Si基功率MOSFET开关速度更快，在相同耐压下电阻更小，并能承受更高的工作温度。由于HEMT独特的横向对称结构，GaN E-HEMT虽然不具备和MOSFET一样的PN体二极管，但是仍然可以利用横向的导电沟道反向传导电流，同时具备反向恢复损耗低的优势。然而在利用GaN E-HEMT双向导电性能时，反向开启电压(VRT＝|VGS-VTH|)会随着栅源负压绝对值的增加而增加，从而增加了器件反向导通损耗。
为了解决这一问题，通常采用外部反向并联肖特基势垒二极管(SchottkyBarrier Diode,SBD)的方法来实现反向续流，但这种方式会增加寄生效应，器件在开启关断过程中的过冲、振荡会更加明显，影响高频性能、增加功耗并降低可靠性。额外的器件也会带来成本的增加，系统体积的增大，并且增加了封装难度。传统集成SBD的方法泄漏电流较大，且续流时的导通压降及阻断状态的漏电流均易受到温度影响，进而降低器件稳定性。因此如何实现低导通损耗、低泄漏电流并且带来较小寄生效应的反向续流的问题亟需解决。
发明内容
针对上述问题，本发明提出一种具有逆向导通能力的GaN HEMT器件。在传统HEMT基础上引入了MOS型沟道二极管来实现反向续流，在避免了反向导通开启电压受栅驱动负压的影响的同时增大了反向导通电流能力。
本发明的技术方案是：
一种具有逆向导通能力的GaN RC-HEMT，包括沿器件垂直方向自下而上依次层叠设置的衬底材料1、第二缓冲层2、第二势垒层3、第一缓冲层4、沟道层5和第一势垒层6；所述第一势垒层6与沟道层5之间、第二势垒层3与第二缓冲层2之间均形成异质结并产生二维电子气2DEG；器件表面沿横向方向从一端到另一端依次分布有槽型源极结构、栅极结构和漏极结构，且两两之间被钝化层7所隔开；
其特征在于，所述槽型源极结构由位于槽侧壁及底部的介质层8以及覆盖在介质层8之上的第一导电材料9构成；位于槽侧壁的介质层8与第二缓冲层2、第二势垒层3、第一缓冲层4和沟道层5接触，位于槽底部的介质层8与第二缓冲层2接触，所述第一导电材料9沿沟道层5表面向靠近漏极的方向延伸，形成欧姆接触，且第一导电材料9侧面与第一势垒层6和钝化层7接触，所述第一导电材料9上表面引出源极；
所述漏极结构由第二导电材料10形成，第二导电材料10依次贯穿第一势垒层6、沟道层5、第一缓冲层4和第二势垒层3后延伸至第二缓冲层2中，第二导电材料10与第二缓冲层2的接触类型为欧姆接触；
所述栅极结构包括位于第一势垒层6上方的P型GaN层11及P型GaN层之上的第三导电材料12，第三导电材料12与P型GaN层11的接触类型为肖特基接触；所述第三导电材料12上表面引出栅极。
进一步的，在第二缓冲层2下表面和衬底材料1上表面之间，还具有由势垒层和位于势垒层下方的缓冲层作为重复单元的续流结构，定义与衬底材料1接触的重复单位由第n势垒层13和第n缓冲层n14构成，其中n大于或等于三；续流结构一侧与介质层8接触，另一侧均第二导电材料10接触；续流结构中，每个重复单元中的势垒层和缓冲层间的异质结均产生2DEG从而形成多沟道续流结构。
进一步的，势垒层采用的材料为AlN、AlGaN、InGaN、InAlN中的一种或几种的组合，所述缓冲层采用的材料为GaN。
本发明的有益效果在于：
1.所发明的结构引入MOS沟道二极管作为反向续流二极管，二极管阳极为HEMT源极，阴极为HEMT漏极。反向导通时，电流由阳极第一导电材料9流出，沿槽型源极结构的侧壁即MOS纵向沟道经沟道层5、缓冲层一4、势垒层二3以及势垒层二3下方的横向2DEG通路到达漏极。MOS型沟道二极管避免了反向开启电压受栅驱动负压的影响，解决了驱动负压绝对值越大，反向导通压降越大的问题。
2.在传统HEMT器件中增加了MOS型沟道二极管的反向续流通路，提高了反向续流时的电流能力。
3.相较于传统集成SBD实现反向续流的HEMT，本发明降低了阻断状态时的泄漏电流，此外多沟道结构形成的极化结在阻断状态时调节电场分布有效增加了耐压能力。
附图说明
图1是实施例1的结构示意图；
图2是实施例2的结构示意图；
具体实施方式
下面结合附图和实施例，详细描述本发明的技术方案：
实施例1
本例的GaN RC-HEMT，包括沿器件垂直方向自下而上依次层叠设置的衬底材料1、缓冲层二2、势垒层二3、缓冲层一4、沟道层5和势垒层一6。所述势垒层一6与沟道层5之间、势垒层二3与缓冲层二2之间均形成异质结并产生2DEG。器件表面沿横向方向从左至右依次分布槽型源极结构、栅极结构和漏极结构，且两两之间被钝化层7所隔开。
其特征在于:所述槽型源极结构由位于槽侧壁与及底部的介质层8以及覆盖介质层8之上的第一导电材料9构成。槽侧壁介质层8与缓冲层二2、势垒层二3、缓冲层一4和沟道层5接触，槽底部介质层8与缓冲层二2接触，所述第一导电材料9表面向右延伸至沟道层5表面，形成欧姆接触，且其侧面与势垒层一6和钝化层7接触。所述第一导电材料9上表面引出源极。
所述漏极结构由第二导电材料10形成，依次贯穿势垒层一6、沟道层5、缓冲层一4和势垒层二3，下表面与缓冲层二2接触，接触类型为欧姆接触。
所述栅极结构包括位于势垒层一6上方的P型GaN层11及其之上的第三导电材料12。第三导电材料12与P型GaN层11的接触类型为肖特基接触。所述第三导电材料12上表面引出栅极。
所述势垒层一6和势垒层二3采用的材料为AlN、AlGaN、InGaN、InAlN中的一种或几种的组合，所述缓冲层一4和缓冲层二2采用的材料为GaN。
本发明提供的具有逆向导通能力的GaN RC-HEMT器件，反向续流时漏源负压使槽型源极侧壁形成电子积累层，构成纵向MOS导电沟道，电流从阳极出发经过纵向沟道后通过势垒层二下方的横向2DEG通路到达阴极，此时反向续流主通路的导通压降基本不受栅驱动负压的影响；当漏源负压达到一定值时，传统HEMT的反向续流通路即势垒层一下方的横向2DEG沟道开启，该续流通路进一步增加反向导通电流从而降低反向导通压降。正向阻断时栅极加低电位，栅极下方2DEG沟道被耗尽，实现器件增强型。正向导通时栅极加高电位，电子从源极出发经过异质结处的沟道2DEG到达漏极。
实施例2
与实施例1相比，在缓冲层二2下方增加由势垒层n13和缓冲层n14构成的重复单元，其中n大于或等于三。重复单元左侧均与槽侧壁介质8接触，右侧均与第二导电材料10接触。所述势垒层一(6)、势垒层二3和势垒层n13采用的材料为AlN、AlGaN、InGaN、InAlN中的一种或几种的组合，所述缓冲层一4、缓冲层二2和缓冲层n14采用的材料为GaN。其中重复单元中的势垒层n13和缓冲层n14间的异质结均产生2DEG并形成多沟道续流结构。
与实施例1相比，本例器件引入了续流多沟道通路，在增加了反向导通电流能力的同时，其形成的极化结可调节电场分布，有利于提升器件耐压。

Claims (3)

1.一种具有逆向导通能力的GaN RC-HEMT，包括沿器件垂直方向自下而上依次层叠设置的衬底材料(1)、第二缓冲层(2)、第二势垒层(3)、第一缓冲层(4)、沟道层(5)和第一势垒层(6)；所述第一势垒层(6)与沟道层(5)之间、第二势垒层(3)与第二缓冲层(2)之间均形成异质结并产生二维电子气2DEG；器件表面沿横向方向从一端到另一端依次分布有槽型源极结构、栅极结构和漏极结构，且两两之间被钝化层(7)所隔开；
其特征在于，所述槽型源极结构由位于槽侧壁及底部的介质层(8)以及覆盖在介质层(8)之上的第一导电材料(9)构成；位于槽侧壁的介质层(8)与第二缓冲层(2)、第二势垒层(3)、第一缓冲层(4)和沟道层(5)接触，位于槽底部的介质层(8)与第二缓冲层(2)接触，所述第一导电材料(9)沿沟道层(5)表面向靠近漏极的方向延伸，形成欧姆接触，且第一导电材料(9)侧面与第一势垒层(6)和钝化层(7)接触，所述第一导电材料(9)上表面引出源极；
所述漏极结构由第二导电材料(10)形成，第二导电材料(10)依次贯穿第一势垒层(6)、沟道层(5)、第一缓冲层(4)和第二势垒层(3)后延伸至第二缓冲层(2)中，第二导电材料(10)与第二缓冲层(2)的接触类型为欧姆接触；
所述栅极结构包括位于第一势垒层(6)上方的P型GaN层(11)及P型GaN层之上的第三导电材料(12)，第三导电材料(12)与P型GaN层(11)的接触类型为肖特基接触；所述第三导电材料(12)上表面引出栅极。
2.根据权利要求1所述的一种具有逆向导通能力的GaN RC-HEMT，其特征在于，在第二缓冲层(2)下表面和衬底材料(1)上表面之间，还具有由势垒层和位于势垒层下方的缓冲层作为重复单元的续流结构，定义与衬底材料(1)接触的重复单位由第n势垒层(13)和第n缓冲层n(14)构成，其中n大于或等于三；续流结构一侧与介质层(8)接触，另一侧均第二导电材料(10)接触；续流结构中，每个重复单元中的势垒层和缓冲层间的异质结均产生2DEG从而形成多沟道续流结构。
3.根据权利要求1或2所述的一种具有逆向导通能力的GaN RC-HEMT，其特征在于，势垒层采用的材料为AlN、AlGaN、InGaN、InAlN中的一种或几种的组合，所述缓冲层采用的材料为GaN。
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