CN114438596A - Easy-to-strip wafer-level gallium nitride epitaxial growth method - Google Patents
Easy-to-strip wafer-level gallium nitride epitaxial growth method Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 108
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 48
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 32
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/342—Boron nitride
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
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- C—CHEMISTRY; METALLURGY
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Abstract
The invention discloses an easy-to-strip wafer-level gallium nitride epitaxial growth method, which comprises the following steps: step 1: taking a c-plane sapphire single crystal substrate; step 2: growing a boron nitride two-dimensional material on the sapphire substrate; and step 3: growing a gallium nitride thick film on the surface of the sapphire substrate on which the boron nitride two-dimensional material grows by halide gas phase epitaxy; and 4, step 4: and reducing the temperature to room temperature to obtain a high-quality gallium nitride thick film. The invention can improve the crystal quality of the gallium nitride epitaxy, reduce dislocation generated by lattice mismatch and is beneficial to mechanically stripping the gallium nitride epitaxy.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an easy-to-strip epitaxial growth method for wafer-level gallium nitride.
Background
Gallium nitride, a typical third-generation semiconductor material, has many excellent characteristics, including high electron mobility, direct band gap, high thermal stability, stable physicochemical properties, and the like. Currently, gallium nitride has been used in many different functional devices, such as high electron mobility transistors, light emitting diodes, and ultraviolet detectors. Gallium nitride is one of the most important information functional materials in the information age, and attracts the extensive attention of researchers in the academic and industrial fields. Despite its excellent properties, gallium nitride substrate materials, which are an important part of electronic devices, are extremely difficult to prepare by conventional melt growth methods, subject to the high dissociation pressure of nitrogen element. Currently, gallium nitride is industrially prepared mainly on a large scale by a heteroepitaxial method, such as halide vapor deposition, metal organic chemical vapor deposition, and the like, and heteroepitaxial gallium nitride has the following defects: on the one hand, heteroepitaxy raises the cost of substrate preparation; on the other hand, the lattice mismatch of the substrate and the epitaxial layer can lead to the generation of a large number of defects at the interface, such as dislocations, stacking faults, etc., which undoubtedly reduce the overall performance of the heteroepitaxial device. Therefore, the fabrication of large-sized gan substrates at low cost has a variable impact on the entire gan semiconductor industry.
Hexagonal gallium nitride has attracted considerable attention from researchers because of its honeycomb structure close to graphene, and its wide band gap of up to 6eV, consisting of alternating sp2 hybridized boron and nitrogen atoms within the hexagonal boron nitride layer and van der waals interactions between layers. The hexagonal boron nitride has excellent characteristics of low dielectric constant, high temperature stability, high oxidation resistance, high thermal conductivity and the like, and is expected to provide protective coatings, dielectric layers and other applications in the aspects of deep ultraviolet light emitters and the like. In addition, hexagonal boron nitride can be an ideal intermediate material which is easy to strip and can generate good epitaxial relation with gallium nitride because the lattice mismatch between hexagonal boron nitride and gallium nitride is only 1.6%. Research results show that polycrystalline boron nitride can be used as a buffer layer to epitaxially grow gallium nitride, but the grown gallium nitride material is polycrystalline.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the hetero-epitaxial gallium nitride on the sapphire substrate adopted by the industry at present can generate larger lattice mismatch and cause a large number of defects in the process of stripping the gallium nitride epitaxy and the substrate, which seriously restricts the development of the gallium nitride industry.
The invention is realized by the following technical scheme:
an easy-to-strip wafer-level gallium nitride epitaxial growth method comprises the following steps:
step 1: taking a c-plane sapphire single crystal substrate;
step 2: growing a boron nitride two-dimensional material on the sapphire substrate;
and step 3: growing a gallium nitride thick film on the surface of the sapphire substrate on which the boron nitride two-dimensional material grows by halide vapor phase epitaxy;
and 4, step 4: and reducing the temperature to room temperature to obtain a high-quality gallium nitride thick film.
The hetero-epitaxial gallium nitride of the sapphire substrate adopted by the industry at present can generate larger lattice mismatch and cause a large number of defects in the process of stripping the gallium nitride epitaxy and the substrate, which seriously restricts the development of the gallium nitride industry. The invention adopts boron nitride as the epitaxial gallium nitride buffer layer material, has 0.13 percent of lattice mismatch with gallium nitride, and can be used for the intercalation material for mechanical stripping. A single-layer high-quality boron nitride material is extended on the sapphire, and then gallium nitride is extended remotely through HVPE, so that on one hand, the crystal quality of the gallium nitride extension can be improved, and dislocation caused by lattice mismatch is reduced; on the other hand, the presence of boron nitride facilitates mechanical stripping of the gallium nitride epitaxy.
More preferably, in step 1, the thickness of the c-plane sapphire single crystal substrate is 400 μm to 500 μm, and the off-angle is 0.25 ° to 0.6 °.
Further preferably, in the step 2, the method for growing the boron nitride two-dimensional material is a CVD growth process.
More preferably, in the step 2, the two-dimensional boron nitride material is grown by a CVD growth process, wherein the growth temperature is set to 1300 ℃ to 1500 ℃, the pressure is set to 0.05Torr to 0.2Torr, and the growth time is 20min to 60 min.
Further preferably, in step 3, the method for epitaxially growing gallium nitride includes: adopting HVPE process, the growth temperature is set at 1020-1080 deg.C, the pressure is set at 550-800 Torr, and the growth time is 60-180 min.
Further preferably, in the step 4, the cooling time is 30min to 120 min.
More preferably, in the step 4, the thickness of the epitaxial gallium nitride is 1 μm to 500 μm.
Further preferably, the method further comprises the step 5: the mechanical stripping obtains high-quality gallium nitride.
Further preferably, in the step 5, the specific method includes: adhering the surface of gallium nitride to an external substrate through a binder, and then separating the sapphire substrate with the boron nitride two-dimensional material and the gallium nitride epitaxial layer through mechanical force; and cleaning off the adhesive on the gallium nitride.
Further preferably, the specific method comprises: adhering the surface of gallium nitride to an external substrate through a binder In, and then separating the sapphire substrate with the boron nitride two-dimensional material grown thereon from the gallium nitride epitaxial layer through mechanical force; and then washing off the In binder on the gallium nitride by using a ferric trichloride solution, wherein the concentration of the ferric trichloride solution is set to be 0.5-3 mol/L, and the washing time is set to be 20-60 min.
The invention has the following advantages and beneficial effects:
the invention provides an easy-to-strip wafer-level gallium nitride epitaxial growth method, which uses boron nitride as an epitaxial buffer layer between sapphire and gallium nitride epitaxy, optimizes and designs related preparation processes, and has the following advantages:
1. boron nitride is used as a buffer layer of sapphire heteroepitaxy gallium nitride, and is less in lattice matching with the gallium nitride;
2. boron nitride is used as an intermediate mechanical stripping intercalation material, and the existence of boron nitride is helpful for mechanically stripping gallium nitride epitaxy. Not only reduces the stripping difficulty and cost, but also reduces the damage to the gallium nitride epitaxial layer in the stripping process.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention. In the drawings:
fig. 1 is a flowchart of a gallium nitride epitaxial growth method according to an embodiment of the present invention.
FIG. 2 is a schematic diagram of a structure of easy-to-strip wafer-level GaN prepared according to an embodiment of the invention, without a mechanical strip-related structure; reference numbers and corresponding part names in the figures: 100-sapphire substrate, 101-boron nitride buffer layer, 102-GaN epitaxial layer,
FIG. 3 is a schematic diagram of a structure of easy-to-strip wafer-level GaN according to an embodiment of the invention, including a mechanical strip-related structure; reference numbers and corresponding part names in the drawings: 103-sapphire substrate, 104-boron nitride buffer layer, 105-GaN epitaxial layer, 106-In adhesive and 107-supporting substrate layer.
Fig. 4 is an X-ray diffraction pattern of the gallium nitride epitaxial thin film prepared in example 1 of the present invention.
Fig. 5 is an atomic force microscope microscopic topography, specifically a height map, of the gallium nitride epitaxial thin film prepared in example 2 of the present invention.
Fig. 6 is an atomic force microscope microscopic topography, specifically an amplitude map, of the gallium nitride epitaxial thin film prepared in example 2 of the present invention.
Fig. 7 is an atomic force microscope microscopic morphology, specifically a phase diagram, of the gallium nitride epitaxial thin film prepared in example 2 of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be apparent to those of ordinary skill in the art that: it is not necessary to employ these specific details to practice the present invention. In other instances, well-known materials or methods have not been described in detail in order to avoid obscuring the present invention.
Throughout the specification, reference to "one embodiment," "an embodiment," "one example," or "an example" means: the particular features, structures, or characteristics described in connection with the embodiment or example are included in at least one embodiment of the invention. Thus, the appearances of the phrases "one embodiment," "an embodiment," "one example" or "an example" in various places throughout this specification are not necessarily all referring to the same embodiment or example. Furthermore, the particular features, structures, or characteristics may be combined in any suitable combination and/or sub-combination in one or more embodiments or examples. Further, those of ordinary skill in the art will appreciate that the illustrations provided herein are for illustrative purposes and are not necessarily drawn to scale. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Example 1
The embodiment provides an epitaxial growth method of wafer-level gallium nitride easy to strip, which comprises the following specific steps:
step 1: a c-plane sapphire single crystal substrate having a thickness of 500 μm and a chamfer angle of 0.25 ℃ was prepared.
Step 2: growing a boron nitride two-dimensional material on a sapphire single crystal substrate by a CVD (chemical vapor deposition) technology, which comprises the following specific steps:
the CVD growth process was used with the growth temperature set at 1300 deg.C, the pressure set at 0.05Torr, and the growth time 20 min.
And step 3: on the surface of a sapphire substrate on which a boron nitride two-dimensional material grows, a gallium nitride thick film is grown by halide vapor phase epitaxy, and the specific steps are as follows:
by adopting an HVPE process, using halide gallium chloride, setting the growth temperature at 1020 ℃, introducing high-purity nitrogen as background atmosphere, keeping the pressure in the cavity between 770Torr and setting the V/III ratio at 10, wherein the low pressure is controlled because the low pressure is favorable for the two-dimensional growth of gallium nitride, Ga atoms have longer migration distance when the V/III ratio is lower, and the growth time is 60 min.
And 4, step 4: cooling to obtain a high-quality gallium nitride thick film; the temperature reduction time is 30min, and the thickness of the epitaxial gallium nitride finally obtained is 40 μm.
And 5: separating the gallium nitride epitaxy from the sapphire substrate using a mechanical lift-off method, thereby obtaining a single crystal gallium nitride epitaxy in (002) orientation;
the surface of gallium nitride is adhered to an external substrate through a binder In, then the sapphire substrate with boron nitride grown is separated from the gallium nitride epitaxial layer through mechanical force, then the In binder on the gallium nitride is cleaned by using a ferric trichloride solution, the concentration of the ferric trichloride solution is set at 0.5mol/L, and the cleaning time is set at 60 min. And after the mechanical transfer process is finished, obtaining the high-quality gallium nitride substrate with the wafer size.
Example 2
The embodiment provides an epitaxial growth method of wafer-level gallium nitride easy to strip, which comprises the following specific steps:
step 1: preparing a c-plane sapphire single crystal substrate, wherein the thickness of the substrate is 400 mu m, and the bevel angle is 0.6 degrees;
step 2: growing a boron nitride two-dimensional material on a sapphire substrate by a CVD (chemical vapor deposition) technology, and specifically comprising the following steps of:
a CVD growth process was used with the growth temperature set at 1400 deg.C, the pressure set at 0.1Torr, and the growth time 60 min.
And step 3: on the surface of a sapphire substrate on which a boron nitride two-dimensional material grows, a gallium nitride thick film is grown by halide vapor phase epitaxy, and the specific steps are as follows:
by adopting an HVPE process, gallium chloride halide is used, the growth temperature is set at 1030 ℃, the introduced background atmosphere is high-purity nitrogen, the pressure in the cavity is kept between 760Torr, the V/III ratio is set at 20, the pressure is controlled to be low because the low pressure is favorable for the two-dimensional growth of gallium nitride, Ga atoms have longer migration distance when the V/III ratio is lower, and the growth time is 120 min.
And 4, step 4: reducing the temperature to room temperature to obtain a high-quality gallium nitride thick film; the temperature reduction time is 60min, and the thickness of the epitaxial gallium nitride finally obtained is 80 μm.
And 5: the gallium nitride epitaxy is separated from the sapphire substrate using a mechanical lift-off method, thereby obtaining a single crystal gallium nitride epitaxy in (002) orientation.
The surface of gallium nitride is adhered to an external substrate through a binder In, then the sapphire substrate with boron nitride growing thereon is separated from the gallium nitride epitaxial layer through mechanical force, then the In binder on the gallium nitride is cleaned by using a ferric trichloride solution, the concentration of the ferric trichloride solution is set at 1mol/L, and the cleaning time is set at 30 min. And after the mechanical transfer process is finished, obtaining the high-quality gallium nitride substrate with the wafer size.
Performance characterization analysis
1. The gallium nitride epitaxial film prepared in example 1 was characterized by X-ray diffraction, and as a result, as shown in fig. 4, diffraction peaks of gallium nitride (002) and (004) were observed in the spectrum, indicating that the gallium nitride epitaxial film synthesized in example 1 was a single crystal epitaxial film oriented along the c-plane and had no other crystal orientation. No other peaks were observed, indicating that the gallium nitride epitaxial thin film synthesized in example 1 was pure-phase and free from excessive impurity phases.
2. The atomic force microscope characterization of the gallium nitride epitaxial film prepared in example 2 revealed that the surface of the gallium nitride epitaxial film was flat and the surface Roughness (RMS) was about 2nm, as shown in fig. 5, which indicates that the gallium nitride epitaxial film synthesized in example 2 was flat, and that the synthesized gallium nitride epitaxial film had high crystallinity and crystal quality, as shown in fig. 4.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are merely exemplary embodiments of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. An easy-to-strip wafer-level gallium nitride epitaxial growth method is characterized by comprising the following steps:
step 1: taking a c-plane sapphire single crystal substrate;
step 2: growing a boron nitride two-dimensional material on the sapphire substrate;
and step 3: growing a gallium nitride thick film on the surface of the sapphire substrate on which the boron nitride two-dimensional material grows by halide vapor phase epitaxy;
and 4, step 4: and reducing the temperature to room temperature to obtain a high-quality gallium nitride thick film.
2. The epitaxial growth method of gallium nitride on wafer level easy to strip as claimed in claim 1, wherein in step 1, the thickness of c-plane sapphire single crystal substrate is 400 μm-500 μm, and the bevel angle is 0.25 ° to 0.6 °.
3. The epitaxial growth method of gallium nitride on wafer level easy to strip as claimed in claim 1, wherein in step 2, the method of growing boron nitride two-dimensional material is CVD growth process.
4. The epitaxial growth method of gallium nitride on wafer level easy to strip as claimed in claim 3, wherein in step 2, the two-dimensional material of boron nitride is grown by CVD growth process, the growth temperature is set to 1300-1500 ℃, the pressure is set to 0.05-0.2 Torr, and the growth time is 20-60 min.
5. The epitaxial growth method of easy-to-strip wafer-level gallium nitride according to claim 1, wherein in step 3, the method of epitaxially growing gallium nitride comprises: adopting HVPE process, the growth temperature is set at 1020-1080 deg.c, the pressure is set at 550-800 Torr, and the growth period is 60-180 min.
6. The epitaxial growth method of easy-to-strip wafer-level gallium nitride as claimed in claim 1, wherein in step 4, the temperature reduction time is 30min to 120 min.
7. The epitaxial growth method of gallium nitride on wafer level easy to strip as claimed in claim 1, wherein in step 4, the thickness of the epitaxial gallium nitride is 1 μm-500 μm.
8. The epitaxial growth method of gallium nitride on wafer level easy to strip according to any of claims 1to 7, further comprising step 5: the mechanical stripping obtains high-quality gallium nitride.
9. The epitaxial growth method of gallium nitride on wafer level easy to strip according to claim 8, wherein the specific method in step 5 comprises:
adhering the surface of gallium nitride to an external substrate through a binder, and then separating the sapphire substrate with the boron nitride two-dimensional material and the gallium nitride epitaxial layer through mechanical force; and cleaning off the adhesive on the gallium nitride.
10. The epitaxial growth method of easy-to-strip wafer-level gallium nitride according to claim 9, characterized in that the specific method comprises:
adhering the surface of gallium nitride to an external substrate through a binder In, and then separating the sapphire substrate with the boron nitride two-dimensional material grown thereon from the gallium nitride epitaxial layer through mechanical force; and then washing off the In binder on the gallium nitride by using a ferric trichloride solution, wherein the concentration of the ferric trichloride solution is set to be 0.5-3 mol/L, and the washing time is set to be 20-60 min.
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