CN1309020C - A method for preparing high-quality ZnO single crystal film on magnesium aluminate substrate - Google Patents
A method for preparing high-quality ZnO single crystal film on magnesium aluminate substrate Download PDFInfo
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- CN1309020C CN1309020C CNB2005100646537A CN200510064653A CN1309020C CN 1309020 C CN1309020 C CN 1309020C CN B2005100646537 A CNB2005100646537 A CN B2005100646537A CN 200510064653 A CN200510064653 A CN 200510064653A CN 1309020 C CN1309020 C CN 1309020C
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- 229910052749 magnesium Inorganic materials 0.000 title claims abstract description 49
- 239000011777 magnesium Substances 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 title claims abstract description 35
- -1 magnesium aluminate Chemical class 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title abstract description 16
- 239000013078 crystal Substances 0.000 title abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 40
- 239000001301 oxygen Substances 0.000 claims abstract description 40
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 29
- 230000012010 growth Effects 0.000 claims abstract description 29
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000010408 film Substances 0.000 claims abstract description 26
- 239000010409 thin film Substances 0.000 claims abstract description 17
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 12
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000003795 desorption Methods 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 17
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 12
- 229910052725 zinc Inorganic materials 0.000 claims description 12
- 239000011701 zinc Substances 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000009832 plasma treatment Methods 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 239000012792 core layer Substances 0.000 claims description 3
- 238000013508 migration Methods 0.000 claims description 3
- 230000005012 migration Effects 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims 1
- 125000004430 oxygen atom Chemical group O* 0.000 abstract description 8
- 238000001179 sorption measurement Methods 0.000 abstract description 3
- 230000006911 nucleation Effects 0.000 abstract description 2
- 238000010899 nucleation Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 230000003746 surface roughness Effects 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 103
- 239000011787 zinc oxide Substances 0.000 description 49
- 229960001296 zinc oxide Drugs 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000097 high energy electron diffraction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 2
- 229910020068 MgAl Inorganic materials 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- UAMZXLIURMNTHD-UHFFFAOYSA-N dialuminum;magnesium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[Mg+2].[Al+3].[Al+3] UAMZXLIURMNTHD-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
本发明公开了一种在铝酸镁衬底上制备ZnO单晶薄膜的方法，其步骤为：对铝酸镁(111)衬底表面在低温下进行氧等离子体预处理，形成氧终止的表面；然后在超高真空下，低温沉积金属镁薄层，再升高衬底温度对镁超薄层进行退火处理，让镁原子与铝酸镁(111)衬底上的氧原子成键、迁移、脱附，最后获得表面富镁的氧化镁吸附层，为外延生长氧极性ZnO提供一个均匀的形核层，然后通过二步生长法制备得到单一氧极性的原子级光滑的ZnO薄膜。本发明所制备的ZnO单晶薄膜表面具有非常清晰的生长台阶，在1×1μm2范围内的表面粗糙度都在1nm以下，适用于高性能光电子器件如紫外探测器等的制作。
The invention discloses a method for preparing a ZnO single crystal thin film on a magnesium aluminate substrate, the steps of which are: performing oxygen plasma pretreatment on the surface of the magnesium aluminate (111) substrate at low temperature to form an oxygen-terminated surface ; and then under ultra-high vacuum, a thin layer of metal magnesium is deposited at a low temperature, and then the substrate temperature is raised to anneal the ultra-thin layer of magnesium, so that the magnesium atoms can form bonds with the oxygen atoms on the magnesium aluminate (111) substrate and migrate , desorption, and finally obtain a magnesium-rich magnesium oxide adsorption layer on the surface, which provides a uniform nucleation layer for the epitaxial growth of oxygen polar ZnO, and then prepares an atomically smooth ZnO film with a single oxygen polarity by a two-step growth method. The surface of the ZnO single crystal thin film prepared by the invention has very clear growth steps, and the surface roughness in the range of 1×1 μm 2 is all below 1 nm, and is suitable for the production of high-performance optoelectronic devices such as ultraviolet detectors.
Description
Technical field
The present invention relates to a kind of method for preparing wide bandgap semiconductor zinc oxide (ZnO) monocrystal thin films, especially technology controlling and process surface and interfaces such as the deposition of the preparation preliminary treatment by substrate surface and magnesium metal thin layer during zinc-oxide film and annealing on magnesium aluminate (111) face, thereby the method for acquisition zinc-oxide film.
Background technology
ZnO has multiple superior function, has a wide range of applications at aspects such as nesa coating, surface acoustic wave device and piezoelectric ceramic.ZnO also is an a kind of direct transition type II-VI family semiconductor, and the room temperature energy gap is 3.37eV.Because its very high free exciton binding energy (60meV), ZnO has become another important semiconductor material with wide forbidden band behind GaN, aspect the low threshold value of preparation, the high efficiency short-wavelength light electronic device very wide application prospect is being arranged.The preparation of device quality zno-based epitaxial film is the basic point that realizes its device application.Though the commercialization of ZnO single crystalline substrate, its price are still very expensive, therefore, the isoepitaxial growth technology of ZnO monocrystal thin films also can't realize commercial Application at present.Similar to GaN, ZnO film prepares by big mismatch heteroepitaxy mostly, problems such as the thin film strain that needs the big mismatch heterostructure system of solution to be brought is big, defect concentration height.Therefore, suitable epitaxially grown backing material of ZnO of exploration and corresponding high-quality thin film technology of preparing have crucial meaning.
Magnesium aluminate (MgAl
2O
4) monocrystalline (spinelle) is widely used in sound wave and microwave device and the epitaxial substrate of IC fast; Recently, discover that it also can be as the substrate of III-V nitride devices, but since at high temperature during growing gallium nitride (GaN) film the oxygen in the substrate can be diffused in the epitaxial film, cause the background electron concentration 1 * 10
18Cm
-3More than, greatly limited this extension system in industrial application.Zinc oxide has identical crystal structure and close lattice constant with gallium nitride, in addition, temperature is relatively low during the preparation zinc-oxide film, the diffusion in epitaxial film of magnesium, aluminium and oxygen is less in the substrate, therefore, magnesium aluminate is considered to the good substrate of zinc oxide, and lattice mismatch is 13.6% between them, and it is little by nearly 5% that the mismatch (18.3%) than zinc oxide growth on the c surface sapphire substrate time is wanted.
2000, people such as Chen have reported result (the Yefan Chen of preparation zinc-oxide film on magnesium aluminate (111) face, etc., Appl.Phys.Lett., 76,245 (2000)), epitaxial growth zinc-oxide film under 550 ℃ the temperature on their magnesium aluminate (111) face after passing through chemical etching, atomic force microscope (AFM) test result shows that the surface of gained monocrystal thin films presents island structure, at 2 * 2 μ m
2Surface roughness in the scope is 4nm.The test result of X-ray diffraction (XRD) shows that the crystalline quality of crystal is relatively poor, and defect concentration is higher; Its reason is that the atom packing of magnesium aluminate on [111] direction is-O-Al-O-Mg-Al-Mg-O-in proper order, wherein the oxygen atomic layer in (111) face is not to arrange by the hexagonal structure of strictness, has certain distortion, direct growth zinc oxide will produce a large amount of defectives on this face, thereby has influenced this application of extension system in industrialization.Therefore, invent and a kind ofly can carry out correction on the atomic scale to magnesium aluminate (111) surface, the template that obtains a suitable zinc oxide epitaxial growth is the key point of this extension system.
Summary of the invention
The purpose of this invention is to provide a kind of new method for preparing zinc oxide thin film, this method is prepared has atomically smooth zinc oxide monocrystalline film, and its superior photoelectric properties show that this film is very suitable for the making of high-performance optical electronic device.
The preparation of zinc-oxide film of the present invention realizes by the following technical solutions:
1) magnesium aluminate (111) substrate back is plated molybdenum, and clean, then substrate is imported the molecular beam epitaxial growth system;
2) carry out radio frequency oxygen plasma treatment about 30 minutes under 20～200 ℃ of low temperature, radio-frequency power is 300～450W, and oxygen flow is 1～3sccm, with magnesium aluminate (111) substrate that obtains the oxygen terminal surface; Selecting the purpose of low temperature is the desorption that prevents surperficial oxygen atom;
3) in air pressure＜1 * 10
-6Pa and underlayer temperature be plated metal magnesium between 20～200 ℃, and the control sedimentation time is to obtain the thick sheet metal magnesium of 3～5mm;
4) 200～500 ℃ of down annealing, allow magnesium atom combines with the oxygen atom of magnesium aluminate (111) substrate surface, migration, desorption, obtain the even magnesium oxide layer of surperficial rich magnesium at last, for epitaxial growth of ZnO provides a forming core layer;
5) temperature deposit thickness between 200～500 ℃ is the ZnO resilient coating of 10～30nm, and oxygen, zinc line are adjusted to the scope of the rich zinc near stoichiometric(al) during with growth, can obtain oxygen polarity ZnO;
6) under 700～800 ℃ of temperature, oxygen atmosphere, anneal; Annealing time is 10～30 minutes;
7) 500～700 ℃ of growths of carrying out epitaxial loayer; Oxygen, zinc line are adjusted to the scope of the rich zinc near stoichiometric(al) in the time of will growing by known means; Behind the ZnO film growth ending, under 700～800 ℃ of temperature, oxygen atmosphere, anneal; Annealing time is 10～30 minutes.
The difference of above-mentioned oxygen polarity ZnO monocrystal thin films preparation method and existing method mainly be to grow the substrate surface preliminary treatment before the ZnO resilient coating and the deposition and the annealing of magnesium thin layer.At a lower temperature magnesium aluminate (111) substrate surface is carried out sufficient oxygen plasma treatment, obtain uniform oxygen terminal surface; Lower treatment temperature can avoid oxygen atom from the substrate surface desorption.Fast the air pressure of growth chamber is reduced to then＜1 * 10
-6Pa is for low temperature depositing magnesium thin layer provides condition.Magnesium metal combines with the oxygen of magnesium aluminate substrate surface, and anneals under higher temperature, forms magnesium oxide (111) adsorption layer of surperficial rich magnesium uniformly; Because the saturated vapor pressure of magnesium metal is very high, and magnesium oxide is stable in very wide temperature range, therefore above-mentioned annealing region very wide (200～500 ℃), and technology is simple, be easy to control.The magnesium atom or the oxygen atom of magnesium oxide (111) face have complete hexagonal symmetry, the mismatch of its lattice and ZnO (0001) lattice is 8.9%, therefore, magnesium oxide (111) face that obtains through said method provides a very ideal template for the ZnO forming core, not only solve the influence that the oxygen atom lattice that twists in magnesium aluminate (111) face causes the ZnO forming core, simultaneously mismatch has been reduced to 8.9% from 13.6%.The forming core at zinc oxide growth initial stage has decisive influence for the release of film misfit strain and the raising of film quality, the method that this method combines with MgO forming core layer by the substrate surface preliminary treatment is easy and controlled MgO (111)/MgAl very effectively
2O
4(111) and ZnO (000-1)/MgO (111) heterogeneous interface atomic structure, thus realized the single epitaxial orientation and the growth of single oxygen Polarity Control of ZnO monocrystal thin films.Reflected high energy electron diffraction (RHEED) home position observation result shows that gained ZnO epitaxial film surface has clearly 3X3 surface structure again, the high temperature epitaxy layer is a step-flow formula two-dimensional growth pattern, the test result of atomic force microscope (AFM) shows, the surface has gem-pure growth step, at 1 * 1 μ m
2Surface roughness in the scope is all below 1nm.In addition, this film of test shows of X-ray diffraction (XRD) has extraordinary crystallinity, is fit to the making of high-performance zinc oxide base optical electronic part fully.
Description of drawings
Fig. 1 prepares the process chart of ZnO monocrystal thin films on magnesium aluminate (111) face for the present invention;
Fig. 2 is the prepared ZnO sample thickness test result of the present invention;
Reflected high energy electron diffraction home position observation pattern when Fig. 3 prepares the ZnO monocrystal thin films for the present invention;
Fig. 4 is the atomic force microscope figure on the prepared ZnO monocrystal thin films surface of the present invention.
Embodiment
The present invention is described in detail below in conjunction with embodiment and accompanying drawing.
Process chart of the present invention as shown in Figure 1, the concrete steps of preparation ZnO monocrystal thin films are as follows on magnesium aluminate (111) substrate:
1. magnesium aluminate (111) substrate back is plated molybdenum, and clean, then substrate is imported the molecular beam epitaxial growth system;
2. carry out the radio frequency oxygen plasma treatment about 30 minutes under 100 ℃ of temperature, radio-frequency power is 350W, and oxygen flow is 2.5sccm, and with magnesium aluminate (111) substrate that obtains the oxygen terminal surface, selecting the purpose of low temperature is the desorption that prevents surperficial oxygen atom;
3. in air pressure＜1 * 10
-6Plated metal magnesium when 100 ℃ of Pa and underlayer temperatures, the equivalent vapour pressure of magnesium line is 1 * 10
-5About Pa, obtain the thick magnesium metal thin layer of 3～5nm;
4. 300 ℃ of down annealing, allow magnesium atom combines with the oxygen atom of magnesium aluminate (111) substrate surface, migration, desorption, obtain the magnesium oxide adsorption layer at last, for epitaxial growth of ZnO provides a homogeneous nucleation layer;
5. deposit thickness is the ZnO resilient coating of 15nm in the time of 300 ℃, and oxygen, zinc line are adjusted to the scope of the rich zinc near stoichiometric(al) during with growth, can obtain the ZnO of oxygen polarity;
6. anneal under 750 ℃ of temperature, oxygen atmosphere, annealing time is 20 minutes;
7. 650 ℃ of growths of carrying out epitaxial loayer, oxygen, zinc line are adjusted to the scope of the rich zinc near stoichiometric(al) during with growth, ZnO film growth 3 hours; After the end, anneal under 750 ℃ of temperature, oxygen atmosphere, annealing time is 30 minutes;
8. drop to room temperature at oxygen atmosphere, take out sample then, finish the preparation of sample.
Utilize step calibrator (Dektak 8) to measure the thickness of the zinc-oxide film of the present invention's preparation, its value is 780nm, as shown in Figure 2.In above-mentioned preparation thin-film process, we utilize reflection high energy electron diffraction (RHEED) that sample is carried out home position observation, its result as shown in Figure 3, wherein Fig. 3 (a) is magnesium aluminate (a 111) substrate through the clean surface after the oxygen plasma treatment; Fig. 3 (b) has 30 degree rotation farmlands for being deposited on magnesium metal layer on the magnesium aluminate (111) in this pattern displaying magnesium (0001) film, corresponding in the drawings the diffracted ray of arrow indication; After this magnesium metal layer is annealed, most of evaporated, the oxygen that only stays small part and substrate surface is bonding mutually again, forming core forms the MgO thin layer shown in Fig. 3 (c) then, and this moment, the pattern of magnesium metal disappeared, only stay rock salt phase oxidation magnesium (111) superthin layer, the rich magnesium of this laminar surface; Fig. 3 (d) is for having grown the surface of ZnO resilient coating; Fig. 3 (e) is for having grown the surface behind the ZnO epitaxial loayer, pattern displaying 3 * 3 structures more clearly, and 3 * 3 again the structure surface be the figuratrix of ZnO (000-1) face, confirmed (K.Iwata, etc. by a plurality of seminar that comprises us, Phys.Stat.Sol. (a) 180,287 (2002) .Z.Mei, etc., J.Appl.Phys., 96,7108 (2004)).The above results shows that the gained film is single oxygen polarity, single farmland ZnO.We utilize atomic force microscope that this film has been carried out the observation of surface topography, as shown in Figure 4, have shown atomic layer step clearly among the figure, and it highly is 0.5nm, at 1 * 1 μ m
2Surface roughness in the scope is 0.389nm.Show that this film has the surface of atomically flating, is highly suitable for the making of high-performance optical electronic device.
Claims (1)
1. the preparation method of a ZnO monocrystal thin films on the magnesium aluminate substrate is characterized in that, comprises the steps:
1) magnesium aluminate (111) substrate back is plated molybdenum, cleaning, then substrate is imported the molecular beam epitaxial growth system;
2) carry out radio frequency oxygen plasma treatment about 30 minutes under 20～200 ℃ of low temperature, radio-frequency power is 300～450W, and oxygen flow is 1～3sccm, with magnesium aluminate (111) substrate that obtains the oxygen terminal surface;
3) in air pressure＜1 * 10
-6Pa and underlayer temperature be plated metal magnesium between 20～200 ℃, to obtain the thick thin layer of 3～5nm;
4) 200～500 ℃ of down annealing, allow magnesium atom combines with the oxygen of magnesium aluminate (111) substrate surface, migration, desorption, obtain the even magnesium oxide layer of surperficial rich magnesium at last, for epitaxial growth of ZnO provides a forming core layer;
5) temperature deposit thickness between 200～500 ℃ is the ZnO resilient coating of 10～30nm, and oxygen, zinc line are adjusted to the scope of the rich zinc near stoichiometric(al) during with growth, can obtain oxygen polarity ZnO;
6) anneal under 700～800 ℃ of temperature, oxygen atmosphere, annealing time is 10～30 minutes;
7) 500～700 ℃ of growths of carrying out epitaxial loayer, oxygen, zinc line are adjusted to the scope of the rich zinc near stoichiometric(al) during with growth; Behind the ZnO film growth ending, anneal under 700～800 ℃ of temperature, oxygen atmosphere, annealing time is 10～30 minutes.
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| CN100545314C (en) * | 2005-12-14 | 2009-09-30 | 中国科学院物理研究所 | In-situ processing method for sapphire substrates for the preparation of high-quality ZnO thin films |
| CN100422394C (en) * | 2006-03-20 | 2008-10-01 | 中国科学院物理研究所 | A method for preparing high-quality ZnO single crystal thin films on Si(111) substrates |
| CN100431101C (en) * | 2007-05-11 | 2008-11-05 | 北京交通大学 | Light-assisted MBE system and method for growing ZnO single crystal thin film |
| CN102477527B (en) * | 2010-11-23 | 2014-07-30 | 鸿富锦精密工业（深圳）有限公司 | Manufacture method of shell and shell manufactured by method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766669A (en) * | 1993-08-30 | 1995-03-10 | Matsushita Electric Ind Co Ltd | Surface acoustic wave convolver |
| US6046464A (en) * | 1995-03-29 | 2000-04-04 | North Carolina State University | Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well |
| CN1271966A (en) * | 2000-05-19 | 2000-11-01 | 山东大学 | Production method of high-brightness LED chip using zinc oxide as its window layer |
| US6362496B1 (en) * | 1997-12-02 | 2002-03-26 | Murata Manufacturing Co., Ltd. | Semiconductor light emitting device having a GaN-based semiconductor layer, method for producing the same and method for forming a GaN-based semiconductor layer |
| CN1513210A (en) * | 2001-04-27 | 2004-07-14 | ��Խ�뵼����ʽ���� | Method of manufacturing light emitting device |
| CN1517454A (en) * | 2003-01-13 | 2004-08-04 | 中国科学院长春光学精密机械与物理研 | A method suitable for preparing oxide thin films by molecular beam epitaxy |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766669A (en) * | 1993-08-30 | 1995-03-10 | Matsushita Electric Ind Co Ltd | Surface acoustic wave convolver |
| US6046464A (en) * | 1995-03-29 | 2000-04-04 | North Carolina State University | Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well |
| US6362496B1 (en) * | 1997-12-02 | 2002-03-26 | Murata Manufacturing Co., Ltd. | Semiconductor light emitting device having a GaN-based semiconductor layer, method for producing the same and method for forming a GaN-based semiconductor layer |
| CN1271966A (en) * | 2000-05-19 | 2000-11-01 | 山东大学 | Production method of high-brightness LED chip using zinc oxide as its window layer |
| CN1513210A (en) * | 2001-04-27 | 2004-07-14 | ��Խ�뵼����ʽ���� | Method of manufacturing light emitting device |
| CN1517454A (en) * | 2003-01-13 | 2004-08-04 | 中国科学院长春光学精密机械与物理研 | A method suitable for preparing oxide thin films by molecular beam epitaxy |
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