CN1587438A - Low temperature insert layer in gallium nitride film grown through hydride gas phase epitaxy - Google Patents

Low temperature insert layer in gallium nitride film grown through hydride gas phase epitaxy Download PDF

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Publication number
CN1587438A
CN1587438A CN 200410053351 CN200410053351A CN1587438A CN 1587438 A CN1587438 A CN 1587438A CN 200410053351 CN200410053351 CN 200410053351 CN 200410053351 A CN200410053351 A CN 200410053351A CN 1587438 A CN1587438 A CN 1587438A
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China
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low temperature
film
gan
gas phase
gallium nitride
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CN 200410053351
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Chinese (zh)
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CN100396816C (en
Inventor
于广辉
雷本亮
叶好华
齐鸣
李爱珍
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中国科学院上海微系统与信息技术研究所
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Abstract

The present invention features that during hydride vapor phase epitaxy (HVPE) of preparing GaN film, low temperature AlN insert layer structure is adopted. During HVPE of preparing GaN film, one AlN film is first low temperature deposited, and after high temperature annealing, further HVPE grows GaN layer. The introduction of low temperature AlN insert layer releases the stress of GaN film further growing on the low temperature AlN insert layer to raise the quality of GaN film. The method is simple and feasible, and has no strict requirement on the crystallization quality of low temperature AlN insert layer. The method may be adopted in scientific experiment and mass production, and the AlN layer may be prepared through chemical vapor phase deposition, molecular beam epitaxy, sputtering or other process.

Description

Low temperature interposed layer and preparation method in the hydride gas phase epitaxial growth gallium nitride film

Technical field

The present invention relates to low temperature interposed layer and preparation method in a kind of hydride gas-phase epitaxy (HVPE) method growing gallium nitride (GaN) film.Be intended to improve the epitaxial growth GaN film quality, belong to technical field of material.

Technical background

In recent years, the HVPE technology has obtained to use widely in the GaN material preparation.Because the growth velocity height of this material growth method, equipment is simple, and preparation cost is low, therefore is a kind of main method of preparation self-supporting GaN substrate.What at present people adopted the success of this method has prepared thick film GaN substrate [R.J.Molnar et al.J.Cryst.Growth,V178,147,1997.】。Because HVPE extension thick film GaN adopts Al usually at present 2O 3, substrate such as GaAs, the lattice mismatch and the thermal mismatching of they and GaN material are bigger, therefore have bigger stress and higher dislocation desity in the GaN of extension material, mainly show as the peak width at half height broad of X-ray diffraction, the surface exists more dislocation to lift one's head.Adopted certain methods to discharge stress in the HVPE Grown GaN film in order to address this problem people, improve the quality of GaN film, comprising high temperature AlN buffer layer [T.Paskova et al.J.Cryst.Growth, V230,381,2001.], methods such as growth interruption [W.Zhang et al.Appl.Phys.Lett., V78,772,2001.].People such as T.Paskova adopt directly under 1000 ℃ of temperature at Al 2O 3The AlN film of last sputter has reduced the defect concentration in the HVPE Grown GaN layer as buffer layer, but the AlN growth temperature is very high for the specification of quality of AlN film up to 1000 ℃, the difficult control of condition during preparation; People such as W.Zhang adopt the method for growth interruption, also greatly reduce the defect concentration in the HVPE Grown GaN material; But up to the present relevant then rarely have report in HVPE growing GaN employing low temperature AI N interposed layer reduction defect concentration.

Summary of the invention

The object of the present invention is to provide low temperature interposed layer and preparation method in a kind of hydride gas-phase epitaxy (HVPE) method GaN film grown.

Specifically, prepare in the process of GaN film at HVPE, Al is adopted in the growth of GaN 2O 3Perhaps GaAs is as substrate, the GaN epitaxial film that at first adopts HVPE, metal organic chemical vapor deposition (MOCVD) or a 1-10 micron of molecular beam epitaxy (MBE) method growth is as template, low temperature depositing one deck AlN thin layer afterwards, thickness is between 3-50nm, depositing temperature is between room temperature to 800 ℃, can adopt method preparations such as CVD, MBE, sputter, continue HVPE growing GaN layer then behind high temperature annealing (900-1100 ℃), anneal gas is N 2, H 2Perhaps both mixed gass.Because this low temperature AI N interposed layer has played nucleogenesis again through crystallization again behind the high temperature annealing, in the GaN of continued growth film, stress has obtained release to a certain degree, thereby has improved the quality of GaN film.This method is simple, and is not high again for the specification of quality of low temperature AI N layer, adopts when being suitable for scientific experiment and batch process.

As mentioned above, the low temperature AI N interposed layer structure that present method is introduced, through continuing the Grown GaN film behind the high temperature annealing, its advantage is summarized as follows:

1. low temperature AI N layer has played nucleogenesis through crystallization again behind the high temperature annealing, and in the GaN of continued growth film, stress has obtained release to a certain degree;

2. the used gas of annealing atmosphere and HVPE growth is consistent, can not introduce contaminating impurity;

3. the preparation of low temperature AI N film is less demanding, realizes volume production easily.

Description of drawings

The structural representation of Fig. 1 low temperature interposed layer provided by the invention

1.Al among the figure 2O 3Substrate 2.GaN epitaxial film 3. low temperature AI N layer 4.HVPE Grown GaN

Embodiment

Suppose that this method is used for HVPE prepares the GaN material.Adopt MOCVD to be grown in Al 2O 3GaN on the substrate adopt AlN layer that 10nm is thick of MOCVD method deposition on the template under 500 ℃ temperature, puts into the hvpe reactor chamber to the template that has low temperature AI N floor, at N then again as template 2Atmosphere is warming up to 1100 ℃, anneals 5 minutes, and we have carried out HVPE GaN growth the annealing back.Sample measurement is the result show, adopts this method Grown GaN film directly not adopt the stress in the HVPE method Grown GaN film little than there being the AlN interposed layer, and crystalline quality is higher.

Claims (6)

1. the low temperature interposed layer in the hydride gas phase epitaxial growth gallium nitride film is characterized in that:
(1) the low temperature interposed layer is the AlN of low temperature depositing;
(2) the low temperature interposed layer is to be deposited on Al 2O 3Perhaps GaAs is a substrate, does on the GaN epitaxial film of template at growth one deck on this substrate earlier.
2. described by the low temperature interposed layer in the hydride gas phase epitaxial growth gallium nitride film according to claim 1, it is characterized in that at described low temperature AI N interposed layer thickness between 3-50nm.
3. described by the low temperature interposed layer in the hydride gas phase epitaxial growth gallium nitride film according to claim 1, it is characterized in that the described GaN epitaxy layer thickness as template of growth earlier is the 1-10 micron.
4. according to the preparation method of the low temperature interposed layer in the described hydride gas phase epitaxial growth gallium nitride film of claim 1, it is characterized in that
(1) with Al 2O 3Perhaps GaAs is a substrate, and the GaN epitaxial film of one deck 1-10 micron of growing thereon earlier is as template;
(2) on the template of GaN epitaxial film, deposition one deck AlN thin layer, depositing temperature are room temperature to 800 ℃, then at N 2, H 2Perhaps generate in 900-1100 ℃ of high temperature annealing under both mixed gass.
5. according to the preparation method of the low temperature interposed layer in the described hydride gas phase epitaxial growth gallium nitride film of claim 4, it is characterized in that at Al 2O 3Perhaps on the GaAs substrate, as the growth of the GaN epitaxial film of template be adopt in hydride gas phase epitaxial growth, metal organic chemical vapor deposition or the molecular beam epitaxial method a kind of.
6. according to the low temperature interposed layer preparation method in the described hydride gas phase epitaxial growth gallium nitride film of claim 4, it is characterized in that the AlN thin film deposition is to adopt chemical vapour deposition, molecular beam epitaxy or sputtering method preparation on the GaN epitaxial film.
CNB2004100533515A 2004-07-30 2004-07-30 Low temperature insert layer in gallium nitride film grown through hydride gas phase epitaxy CN100396816C (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100453690C (en) * 2006-07-21 2009-01-21 哈尔滨工业大学 Molecular beam epitaxy process of growing GaAs-base InSb film
CN101847578A (en) * 2010-04-23 2010-09-29 西安电子科技大学 Method for growing semi-polar GaN based on Al2O3 substrate with m sides
CN101962803A (en) * 2010-10-30 2011-02-02 北京大学 Heteroepitaxial growth method for high-quality monocrystalline thick-film material
CN103633134A (en) * 2013-12-12 2014-03-12 中山大学 Thick-film high-resistance nitride semiconductor epitaxy structure and growing method thereof
CN107768234A (en) * 2017-09-27 2018-03-06 中国科学院长春光学精密机械与物理研究所 A kind of method for obtaining high quality AlN templates

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1227718C (en) * 2003-02-18 2005-11-16 华南师范大学 Method for making gallium nitride crystal

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100453690C (en) * 2006-07-21 2009-01-21 哈尔滨工业大学 Molecular beam epitaxy process of growing GaAs-base InSb film
CN101847578A (en) * 2010-04-23 2010-09-29 西安电子科技大学 Method for growing semi-polar GaN based on Al2O3 substrate with m sides
CN101847578B (en) * 2010-04-23 2011-09-21 西安电子科技大学 Method for growing semi-polar GaN based on Al2O3 substrate with m sides
CN101962803A (en) * 2010-10-30 2011-02-02 北京大学 Heteroepitaxial growth method for high-quality monocrystalline thick-film material
CN101962803B (en) * 2010-10-30 2012-08-29 北京大学 Heteroepitaxial growth method for high-quality monocrystalline thick-film material
CN103633134A (en) * 2013-12-12 2014-03-12 中山大学 Thick-film high-resistance nitride semiconductor epitaxy structure and growing method thereof
CN103633134B (en) * 2013-12-12 2016-09-14 中山大学 A kind of thick-film high-resistance nitride semiconductor epitaxy structure and growing method thereof
CN107768234A (en) * 2017-09-27 2018-03-06 中国科学院长春光学精密机械与物理研究所 A kind of method for obtaining high quality AlN templates

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