CN114411120A

CN114411120A - Multi-cavity chemical vapor deposition equipment

Info

Publication number: CN114411120A
Application number: CN202210071484.3A
Authority: CN
Inventors: 王萍
Original assignee: Dezhou Zhinanzhen Machinery Technology Co ltd
Current assignee: Dezhou Zhinanzhen Machinery Technology Co ltd
Priority date: 2022-01-21
Filing date: 2022-01-21
Publication date: 2022-04-29

Abstract

The invention discloses multi-cavity chemical vapor deposition equipment, which comprises a box body, wherein a gas supply structure is arranged on the box body, the interior of the box body is divided into a plurality of cavities through a plurality of separation structures, a plurality of heating structures are arranged in the box body, a plurality of lifting structures are arranged in the box body, and a plurality of lifting structures are respectively provided with a carrying structure; under complicated process conditions and sequences, the deposition process can be carried out in a single cavity according to the process conditions, and the distances between the substrate and the hot wire and between the substrate and the gas distribution system are adjusted through the lifting table, so that side reactions are avoided, and the product quality is prevented from being influenced.

Description

Multi-cavity chemical vapor deposition equipment

Technical Field

The invention relates to the technical field of chemical vapor deposition film equipment, in particular to multi-cavity chemical vapor deposition equipment.

Background

Typical chemical vapor deposition processes expose a substrate to one or more different precursors, and allow the multiple vapors to chemically react and/or decompose under reaction conditions such as high temperature, plasma, etc., to produce a deposited film on the substrate surface. Compared with the plasma technology, the hot wire method can prepare large-area diamond films, has the lowest comprehensive cost and has good industrial popularization potential.

At present, equipment of mainstream equipment manufacturers on the market generally only has one reaction cavity, and can not carry out multiple processes simultaneously, and because the components and the flow of gas phases are different and the required temperature is different when films with different layers and different sizes are deposited, when another process is carried out after one process is finished, the time for changing reaction conditions is longer, so that higher cost is caused, defects are also caused, and quality problems are caused. For example, when a diamond film material is deposited, the required working temperature ranges from 1600 ℃ to 2400 ℃, the reaction pressure is between 5 and 100 mbar, the reacted gas phase forms different permutation and combination in hydrogen, methane, diborane, oxygen and nitrogen, and the method is suitable for films with different forms, and the service life of the hot wire is greatly influenced by the process and gas phase adjustment, so that the quality is relatively poor, the operation cost is high, the equipment cavity is only suitable for one arrangement mode, and the yield of a single cavity is too low under the same reaction condition, so that the large-scale industrial production and market requirements cannot be met; the application scenarios of single-cavity devices are also often limited, and devices that lay flat on a substrate cannot be used for deposition of vertically placed substrates, so that the present application has been made in order to solve the above problems.

Disclosure of Invention

The invention aims to solve the problems, and designs a multi-cavity chemical vapor deposition device which can improve the quality of a deposited film, reduce the operation cost, realize large-scale industrialization and simultaneously deposit a plane-placed substrate and a vertical-placed substrate.

The technical scheme of the invention for realizing the aim is as follows: a multi-cavity chemical vapor deposition device comprises a box body, wherein a gas supply structure is arranged on the box body, the interior of the box body is divided into a plurality of cavities through a plurality of separation structures, a plurality of heating structures are arranged in the box body, a plurality of lifting structures are arranged in the box body, a carrying structure is arranged on each of the plurality of lifting structures, and a gas treatment structure and a cooling structure are further arranged on the box body;

the gas supply structure includes: a four-way pipe, an active gas tank and three premixing parts;

the four-way pipe is arranged on the upper wall surface of the box body, the active gas tank is arranged at one end of the four-way pipe, and the three premixing parts are arranged on the four-way pipe.

Preferably, the premixing section includes: the device comprises a mixing box, two first motors, two fan blades, a first valve and a gas outlet nozzle;

the mixing box is installed on the four-way pipe, two first motors are installed on the top surface of the inner side of the mixing box, two fan blades are installed on the first motor driving end respectively, the first valve is installed on the mixing box, and the gas outlet is installed on the first valve.

Preferably, the partition structure includes: the device comprises a fixed clapboard sleeve, a plurality of first cylinders and movable clapboards;

the fixed partition plate sleeve is arranged on the side wall face in the box body, the first cylinders are arranged on the side wall face of the fixed partition plate sleeve, the movable partition plate is movably inserted into the fixed partition plate sleeve, and the telescopic ends of the first cylinders are arranged on the side wall face of the movable partition plate.

Preferably, the heating structure includes: the device comprises two brackets, a plurality of pairs of molybdenum electrodes and a plurality of hot wires;

the two supports are arranged on the inner side wall surface in the box body, the molybdenum electrodes are arranged on the two supports, and the heating wires are arranged on the molybdenum electrodes.

Preferably, the lifting structure includes: the device comprises a base, a second cylinder, a mounting plate and a surrounding baffle part;

the base is installed on the bottom surface of the inner side of the box body, the second cylinder is installed on the upper wall surface of the base, the mounting plate is installed on the telescopic end of the second cylinder, and the enclosing part is installed on the base and the mounting plate.

Preferably, the enclosure comprises: a fixed stop sleeve and a lifting stop sleeve;

the fixed baffle sleeve is installed on the base, the second cylinder is located inside the fixed baffle sleeve, the lifting baffle sleeve is inserted into the fixed baffle sleeve, and one end of the lifting baffle sleeve is installed on the lower wall face of the installation plate.

Preferably, the carrier structure comprises: the two fixed seats, the two second motors, the two threaded rods, the two pairs of sliding blocks and the objective table;

the two fixing seats are arranged on the upper wall surface of the mounting plate, the two second motors are arranged on the two fixing seats, the two threaded rods are respectively and movably inserted into the two fixing seats, the two pairs of sliding blocks are respectively and movably sleeved on the two threaded rods, and the object stage is arranged on the two pairs of sliding blocks.

Preferably, the gas treatment structure comprises: a plurality of second valves, a vacuum exhaust pipeline, a vacuum pump and a tail gas purification system;

the plurality of second valves are arranged on the lower wall surface of the box body, the vacuum exhaust pipeline is arranged on the plurality of second valves, the vacuum pump is arranged at one end of the vacuum exhaust pipeline, and the tail gas purification system is arranged at one end of the vacuum pump.

Preferably, the cooling structure includes: a water inlet valve, a water inlet pipe, a water treatment part, a water return pipe and a water return valve;

the water inlet valve is arranged on the lower wall surface of the box body, the water inlet pipe is arranged at one end of the water inlet valve, the water treatment part is arranged at one end of the water inlet pipe, the water return pipe is arranged at one end of the water treatment part, the water return valve is arranged at one end of the water return pipe, and the water return valve is arranged on the side wall surface of the box body.

Preferably, the water treatment section includes: a heat exchanger and a cooling water purification system;

the heat exchanger is installed in inlet tube one end, cooling water purification system installs in heat exchanger one end, the cooling water purification system other end is installed on the wet return.

The multi-box chemical vapor deposition equipment manufactured by the technical scheme of the invention has the following beneficial effects:

1. under the condition of longer deposition time, such as a diamond film and an amorphous silicon film, but not limited to the diamond film and the amorphous silicon film, the deposition can be simultaneously carried out in equipment with three, ten or more cavities, the industrial preparation of the film material can be completed in a large scale at one time, and the investment cost and the operation cost of hardware are saved.

2. Under complicated process conditions and sequences, the deposition process can be carried out in a single cavity according to the process conditions, and the distances between the substrate and the hot wire and between the substrate and the gas distribution system are adjusted through the lifting table, so that side reactions are avoided, and the product quality is prevented from being influenced.

3. Under complex process conditions and sequences, a deposition process can be transferred in a multi-cavity according to a process sequence, particularly in a process section which can generate toxic and high-pollution substances, a relatively independent cavity is particularly important, special materials and a safe treatment process can be adopted, cavity cleaning and tail gas treatment can be completed in a targeted manner, meanwhile, the risk of cross contamination of different process sections in the same cavity is avoided, the time of a deposition reaction is saved, the safety is improved, and the service lives of the cavity and equipment are prolonged.

Drawings

FIG. 1 is a schematic sectional front view of a multi-chamber CVD apparatus according to the present invention.

Fig. 2 is a top view of a heating structure according to the present invention.

Figure 3 is a top view of the payload structure of the present invention.

FIG. 4 is a top view of a multi-chamber chemical vapor deposition apparatus according to the present invention.

Fig. 5 is a side view of the partition structure of the present invention.

In the figure: 1. the device comprises a box body, 2, a four-way pipe, 3, an active gas tank, 4, a mixing box, 5, a first motor, 6, fan blades, 7, a first valve, 8, a gas outlet, 9, a fixed partition sleeve, 10, a first cylinder, 11, a movable partition, 12, a support, 13, a molybdenum electrode, 14, a hot wire, 15, a base, 16, a second cylinder, 17, a mounting plate, 18, a fixed partition sleeve, 19, a lifting partition sleeve, 20, a fixed seat, 21, a second motor, 22, a threaded rod, 23, a sliding block, 24, a carrying table, 25, a second valve, 26, a vacuum exhaust pipeline, 27, a vacuum pump, 28, a tail gas purification system, 29, a water inlet valve, 30, a water inlet pipe, 31, a water return pipe, 32, a water return valve, 33, a heat exchanger, 34 and a cooling water purification system.

Detailed Description

The present invention will be described in detail with reference to the accompanying drawings, which show in FIGS. 1 to 5 a multi-chamber chemical vapor deposition apparatus.

All the electrical components in the present application are connected with the power supply adapted to the electrical components through the wires, and an appropriate controller should be selected according to actual conditions to meet the control requirements, and specific connection and control sequences should be obtained.

A chemical vapor deposition device with multiple boxes 1 comprises a box 1, wherein a gas supply structure is arranged on the box 1, the interior of the box 1 is divided into multiple cavities through a plurality of separation structures, a plurality of heating structures are arranged inside the box 1, a plurality of lifting structures are arranged inside the box 1, a carrying structure is arranged on each lifting structure, and a gas treatment structure and a cooling structure are further arranged on the box 1;

wherein, it is required to be noted that: the box body 1 is divided into a plurality of cavities through a plurality of separation structures, the gas supply structure is used for providing active gas for the interior of the box body 1, the plurality of heating structures are respectively positioned in each cavity in the box body 1 and used for heating, the lifting structure corresponds to the heating structures, the carrying structure is used for placing and moving the base plate, the lifting structure is used for adjusting the distance between the base plate and the heating structures, the gas treatment structure is used for adjusting the vacuum state in the box body 1 and treating tail gas, and the cooling structure is used for cooling;

in the embodiment, the gas supply structure may preferably adopt the following structure including: a four-way pipe 2, an active gas tank 3 and three premixing parts; the four-way pipe 2 is arranged on the upper wall surface of the box body 1, the active gas tank 3 is arranged at one end of the four-way pipe 2, and the three premixing parts are arranged on the four-way pipe 2;

wherein, it is required to be noted that: the active gas tank 3 enters the three premixing parts through the four-way pipe 2 to mix the gases, and then the mixed gases are discharged into the cavity;

in practice, the premixing section may preferably adopt the following structure, which includes: the device comprises a mixing box 4, two first motors 5, two fan blades 6, a first valve 7 and a gas outlet nozzle 8; the mixing box 4 is arranged on the four-way pipe 2, the two first motors 5 are arranged on the top surface of the inner side of the mixing box 4, the two fan blades 6 are respectively arranged on the driving ends of the two first motors 5, the first valve 7 is arranged on the mixing box 4, and the gas outlet nozzle 8 is arranged on the first valve 7;

wherein, it is required to be noted that: the gas enters the mixing box 4, the first motor 5 works, the two fan blades 6 rotate to mix the gas, the first valve 7 is opened, and the mixed gas is discharged from the gas outlet nozzle 8;

in a specific implementation, the partition structure may preferably adopt the following structure, which includes: the device comprises a fixed clapboard sleeve 9, a plurality of first air cylinders 10 and movable clapboards 11; the fixed baffle plate sleeve 9 is arranged on the inner side wall surface of the box body 1, the plurality of first air cylinders 10 are arranged on the side wall surface of the fixed baffle plate sleeve 9, the movable baffle plate 11 is movably inserted on the fixed baffle plate sleeve 9, and the telescopic ends of the plurality of first air cylinders 10 are arranged on the side wall surface of the movable baffle plate 11;

wherein, it is required to be noted that: when deposition is carried out under different process conditions or under the condition of avoiding cross contamination among cavities, when a plurality of first air cylinders 10 are in an extension state, the movable partition plate 11 and the fixed partition plate sleeve 9 divide the interior of the box body 1 into a plurality of cavities, film deposition is carried out under the same active gas and the same reaction condition, when the plurality of first air cylinders 10 are in a contraction state, the movable partition plate 11 is retracted into the fixed partition plate sleeve 9 to form a cavity, the industrialized mass production mode of the same film material is suitable, when substrate transmission is carried out among the cavities, the plurality of first air cylinders 10 are contracted, the movable partition plate 11 is retracted into the fixed partition plate sleeve 9, when the transmission is finished, the plurality of first air cylinders 10 are extended, and the movable partition plate 11 is pulled out of the fixed partition plate sleeve 9;

in a specific implementation, the heating structure may preferably adopt the following structure, which includes: two brackets 12, a plurality of pairs of molybdenum electrodes 13 and a plurality of hot wires 14; the two brackets 12 are arranged on the inner side wall surface of the box body 1, the plurality of pairs of molybdenum electrodes 13 are arranged on the two brackets 12, and the plurality of hot wires 14 are arranged on the plurality of pairs of molybdenum electrodes 13;

wherein, it is required to be noted that: the two brackets 12 are used for installing hot wires 14, the device is electrified, and the plurality of hot wires 14 work through the plurality of pairs of molybdenum electrodes 13 to generate heat;

in a specific implementation, the lifting structure may preferably adopt the following structure, which includes: the base 15, the second cylinder 16, the mounting plate 17 and the surrounding baffle part; the base 15 is arranged on the bottom surface of the inner side of the box body 1, the second cylinder 16 is arranged on the upper wall surface of the base 15, the mounting plate 17 is arranged on the telescopic end of the second cylinder 16, and the enclosure part is arranged on the base 15 and the mounting plate 17;

wherein, it is required to be noted that: the second cylinder 16 extends, the mounting plate 17 is lifted, and the enclosure part is used for shielding the second cylinder 16;

in the specific implementation process, the surrounding baffle part can preferably adopt the following structure, which comprises the following steps: a fixed stop collar 18 and a lifting stop collar 19; a fixed blocking sleeve 18 is arranged on the base 15, the second cylinder 16 is positioned inside the fixed blocking sleeve 18, the lifting blocking sleeve 19 is inserted on the fixed blocking sleeve 18, and one end of the lifting blocking sleeve 19 is arranged on the lower wall surface of the mounting plate 17;

wherein, it is required to be noted that: during the lifting of the mounting plate 17, the lifting stop sleeve 19 moves on the fixed stop sleeve 18;

in particular embodiments, the carrier structure may preferably be of the following structure, including: two fixed seats 20, two second motors 21, two threaded rods 22, two pairs of sliding blocks 23 and an object stage 24; the two fixed seats 20 are arranged on the upper wall surface of the mounting plate 17, the two second motors 21 are arranged on the two fixed seats 20, the two threaded rods 22 are respectively and movably inserted on the two fixed seats 20, the two pairs of sliding blocks 23 are respectively and movably sleeved on the two threaded rods 22, and the object stage 24 is arranged on the two pairs of sliding blocks 23;

wherein, it is required to be noted that: the base plate or the small-volume vertical base material is placed on the object stage 24, during the process change, such as the change of parameters of temperature, active gas and the like, the second air cylinder 16 is controlled to stretch and contract, the distance between the base plate or the small-volume vertical base material and the hot wire 14 is adjusted, side reaction is avoided, and the product quality is influenced, when the base plate or the small-volume vertical base material needs to be conveyed to other cavities, the two second motors 21 work, the two threaded rods 22 rotate, the two pairs of sliding blocks 23 drive the object stage 24 to be close to the object stage 24, the object stage 24 in the cavity to be placed simultaneously works, the object stage 24 is close to the base plate or the small-volume vertical base material, then the second air cylinder 16 contracts until the base plate or the small-volume vertical base material moves to the position above the object stage 24 in the cavity to be placed, and then the second air cylinder 16 extends to finish the transfer and conveying of the base plate or the small-volume vertical base material;

in particular implementations, the gas treatment structure may preferably employ a structure comprising: a plurality of second valves 25, a vacuum exhaust pipe 26, a vacuum pump 27, and an exhaust gas purification system 28; the plurality of second valves 25 are installed on the lower wall surface of the box body 1, the vacuum exhaust pipeline 26 is installed on the plurality of second valves 25, the vacuum pump 27 is installed at one end of the vacuum exhaust pipeline 26, and the tail gas purification system 28 is installed at one end of the vacuum pump 27;

wherein, it is required to be noted that: when the vacuum pumping is needed, a plurality of second valves 25 are opened, the vacuum pump 27 works, the vacuum exhaust pipeline 26 is used for gas circulation, and the tail gas purification system 28 purifies and then exhausts the gas in the cavity;

in a specific implementation, the cooling structure may preferably adopt the following structure, which includes: a water inlet valve 29, a water inlet pipe 30, a water treatment unit, a water return pipe 31, and a water return valve 32; the water inlet valve 29 is installed on the lower wall surface of the box body 1, the water inlet pipe 30 is installed at one end of the water inlet valve 29, the water treatment part is installed at one end of the water inlet pipe 30, the water return pipe 31 is installed at one end of the water treatment part, the water return valve 32 is installed at one end of the water return pipe 31, and the water return valve 32 is installed on the side wall surface of the box body 1;

in the specific implementation process, the water treatment part can preferably adopt the following structure, which comprises the following steps: a heat exchanger 33 and a cooling water purification system 34; the heat exchanger 33 is installed at one end of the water inlet pipe 30, the cooling water purification system 34 is installed at one end of the heat exchanger 33, and the other end of the cooling water purification system 34 is installed on the water return pipe 31;

wherein, it is required to be noted that: the return valve 32 and the inlet valve 29 are opened, the water in the tank 1 flows from the return pipe 31 to the cooling water purification system 34, the purified water passes through the heat exchanger 33, the heat exchanger 33 cools the water, and the water is circulated back into the tank 1 from the inlet pipe 30 and the inlet valve 29.

The implementation method comprises the following steps:

the working process of amorphous silicon deposition by adopting the multi-cavity chemical vapor deposition equipment comprises the following steps:

the cavity numbers from left to right are 1, 2 and 3 in sequence, the cavity number 2 is closed, the separation structure works, the vacuum is pumped to 100 millibars, and the hot wire 14 is started to heat; placing the pretreated wafer or substrate on an object stage 24 of a cavity 1, closing the cavity 1, working in a separation structure, vacuumizing to 100 mbar, and starting a hot wire 14 for heating; preheating the wafer or the substrate in the cavity 1 to 150 ℃ and starting the separation structure between the cavity 1 and the cavity 2, transferring the wafer or the substrate to the cavity 2 through the carrying structure, wherein the cavity 2 is preheated to a specified temperature, introducing hydrogen and silicon-containing gas, heating the hot wafer or the substrate to 450 ℃ and keeping the temperature for a period of time; in the process of treating the cavity No. 2, vacuumizing the cavity No. 3 to 50 mbar, and starting the hot wire 14 to heat; transferring the wafer or the substrate reacted in the No. 2 cavity into the No. 3 cavity, and quenching at the temperature of 150 ℃; in the quenching process, the above process is repeated, so that three processes of preheating, high-temperature treatment and low-temperature quenching are continuously completed without repeatedly adjusting the temperature, the time of the whole process is reduced, the influence of process change on the hot wire 14 is reduced, and the operation cost is saved.

The second embodiment is as follows:

the working process of diamond deposition by adopting the multi-cavity chemical vapor deposition equipment comprises the following steps:

the pretreated wafer or substrate is placed on the object stage 24 of all the chambers at the same time, the separation structure between No. 1, No. 2 and No. 3 is not closed, vacuum is pumped to 100 mbar, the stage 24 is lowered by the elevating structure to make the wafer or substrate far away from the hot wire 14, hydrogen is introduced, and the hot wire 14 is started to heat, after the temperature of the hot wire 14 reaches 2200-, after the deposition process is finished, the methane is closed, the hydrogen atmosphere is maintained, the object stage 24 is lowered again through the lifting structure, so that the wafer or the substrate and the hot wire 14 are quenched at a longer distance, a film with better quality can be deposited at the beginning, the quenching process is better finished, under the condition of shortening the deposition time, the quality of the diamond film is improved, and the requirement of industrial production can be met through a plurality of cavities.

The technical solutions described above only represent the preferred technical solutions of the present invention, and some possible modifications to some parts of the technical solutions by those skilled in the art all represent the principles of the present invention, and fall within the protection scope of the present invention.

Claims

1. The multi-cavity chemical vapor deposition equipment comprises a box body (1), and is characterized in that a gas supply structure is arranged on the box body (1), the interior of the box body (1) is divided into a plurality of cavities through a plurality of separation structures, a plurality of heating structures are arranged inside the box body (1), a plurality of lifting structures are arranged inside the box body (1), a carrying structure is arranged on each of the lifting structures, and a gas treatment structure and a cooling structure are further arranged on the box body (1);

the gas supply structure includes: a four-way pipe (2), an active gas tank (3) and three premixing parts;

the four-way pipe (2) is arranged on the upper wall surface of the box body (1), the active gas tank (3) is arranged at one end of the four-way pipe (2), and the premixing parts are arranged on the four-way pipe (2).

2. A multi-chamber chemical vapor deposition apparatus according to claim 1, wherein the premixing section comprises: the device comprises a mixing box (4), two first motors (5), two fan blades (6), a first valve (7) and a gas outlet nozzle (8);

mixing box (4) are installed on four-way pipe (2), two first motor (5) are installed on mixing box (4) inboard top surface, two flabellum (6) are installed respectively in two on first motor (5) drive end, first valve (7) are installed on mixing box (4), gas outlet nozzle (8) are installed on first valve (7).

3. A multi-chamber chemical vapor deposition apparatus according to claim 1, wherein the separation structure comprises: the device comprises a fixed clapboard sleeve (9), a plurality of first air cylinders (10) and movable clapboards (11);

the utility model discloses a fixed baffle box, including box (1), fixed baffle cover (9), a plurality of on the side wall face in box (1) is installed to fixed baffle cover (9) first cylinder (10) are installed on fixed baffle cover (9) side wall face, movable baffle (11) activity cartridge is on fixed baffle cover (9), and a plurality of the flexible end of first cylinder (10) is installed on movable baffle (11) side wall face.

4. A multi-chamber chemical vapor deposition apparatus according to claim 1, wherein the heating structure comprises: two brackets (12), a plurality of pairs of molybdenum electrodes (13) and a plurality of hot wires (14);

the two brackets (12) are arranged on the inner side wall surface of the box body (1), the molybdenum electrodes (13) are arranged on the two brackets (12), and the hot wires (14) are arranged on the molybdenum electrodes (13).

5. A multi-chamber chemical vapor deposition apparatus according to claim 1, wherein the elevating structure comprises: the device comprises a base (15), a second cylinder (16), a mounting plate (17) and a surrounding baffle part;

the base (15) is installed on the bottom surface of the inner side of the box body (1), the second cylinder (16) is installed on the upper wall surface of the base (15), the installation plate (17) is installed on the telescopic end of the second cylinder (16), and the blocking portion is installed on the base (15) and the installation plate (17).

6. A multi-chamber chemical vapor deposition apparatus according to claim 5, wherein the enclosure comprises: a fixed stop sleeve (18) and a lifting stop sleeve (19);

the fixed blocking sleeve (18) is installed on the base (15), the second cylinder (16) is located inside the fixed blocking sleeve (18), the lifting blocking sleeve (19) is inserted into the fixed blocking sleeve (18), and one end of the lifting blocking sleeve (19) is installed on the lower wall face of the installation plate (17).

7. A multi-chamber chemical vapor deposition apparatus according to claim 5, wherein the carrier structure comprises: the device comprises two fixed seats (20), two second motors (21), two threaded rods (22), two pairs of sliding blocks (23) and an objective table (24);

two fixing bases (20) are installed on the upper wall surface of the installation plate (17), two second motors (21) are installed on the two fixing bases (20), two threaded rods (22) are movably inserted into the two fixing bases (20) respectively, two pairs of sliding blocks (23) are movably sleeved on the two threaded rods (22) respectively, and the object stage (24) is installed on the two pairs of sliding blocks (23).

8. A multi-chamber chemical vapor deposition apparatus according to claim 1, wherein the gas processing structure comprises: a plurality of second valves (25), a vacuum exhaust pipeline (26), a vacuum pump (27) and an exhaust gas purification system (28);

the plurality of second valves (25) are installed on the lower wall surface of the box body (1), the vacuum exhaust pipeline (26) is installed on the plurality of second valves (25), the vacuum pump (27) is installed at one end of the vacuum exhaust pipeline (26), and the tail gas purification system (28) is installed at one end of the vacuum pump (27).

9. A multi-chamber chemical vapor deposition apparatus according to claim 1, wherein the cooling structure comprises: a water inlet valve (29), a water inlet pipe (30), a water treatment part, a water return pipe (31) and a water return valve (32);

the water inlet valve (29) is installed on the lower wall surface of the box body (1), the water inlet pipe (30) is installed at one end of the water inlet valve (29), the water treatment portion is installed at one end of the water inlet pipe (30), the water return pipe (31) is installed at one end of the water treatment portion, the water return valve (32) is installed at one end of the water return pipe (31), and the water return valve (32) is installed on the side wall surface of the box body (1).

10. A multi-chamber chemical vapor deposition apparatus according to claim 9, wherein the water treatment section comprises: a heat exchanger (33) and a cooling water purification system (34);

the heat exchanger (33) is installed at one end of the water inlet pipe (30), the cooling water purification system (34) is installed at one end of the heat exchanger (33), and the other end of the cooling water purification system (34) is installed on the water return pipe (31).