KR20150000819A - Chemical vapor deposition reactor and method for preparing of polysilicon - Google Patents

Abstract

The present invention relates to a chemical vapor deposition (CVD) reactor enabling continuous chemical reactions and a polysilicon producing method thereof. The CVD reactor according to an embodiment of the present invention includes: a movable base plate; and a tunnel-shaped enclosure.

Description

[0001] The present invention relates to a chemical vapor deposition reactor and a method of manufacturing the same. More particularly,

The present invention relates to a chemical vapor deposition reactor and a process for producing polysilicon. More particularly, the present invention relates to a chemical vapor deposition reactor capable of continuous reaction and a process for producing polysilicon using the chemical vapor deposition reactor.

One known method of producing polysilicon for solar cells is by the deposition of polysilicon in a chemical vapor deposition (CVD) reactor, known as the Siemens process.

In the Siemens process, generally, a thin silicon filament is installed in a bell-jar type reactor, the silicon filament is heated through an electrode, a silicon precursor compound in a gaseous state such as trichlorosilane is injected and pyrolyzed, And the silicon is deposited on the filament.

In the Siemens process, silicon filaments are typically exposed to trichlorosilane along with the carrier gas at elevated temperatures above 1000 ° C. The trichlorosilane gas decomposes and deposits silicon on a heated silicon filament as shown in the following Formula 1 to grow a heated silicon filament.

[Formula 1]

2 SiHCl ₃ - > Si + 2HCl + SiCl ₄

Silicon harvested by such a process is typically polycrystalline silicon.

Figure 1 is a flow chart showing the process steps of a typical Siemens process.

Referring to Fig. 1, more specifically, the Siemens process is carried out by repeating the following steps (1) to (8).

Step (1): In a bell-jar reactor covered with a suitable enclosure to enable high temperature, air-tight operation, the atmosphere in the reactor is replaced with nitrogen gas (N ₂ ) Replacing with hydrogen gas (H ₂ ) and maintaining a high temperature by applying a high voltage to the installed silicon filament (Purge &Ignition);

Step (2): A precursor compound (SiHCl ₃ , SiH ₂ Cl ₂ , SiCl _4, etc.) of a desired composition containing silicon and hydrogen gas (H ₂ ) (Deposition);

Step (3): cooling the deposited silicon filament slowly and replacing the atmosphere in the reactor with nitrogen gas (N ₂ ) (Cooling &Purge);

Step (4): a step of unbinding the bell-shaped reactor and the base plate and opening the bell-shaped reactor (Open);

Step (5): harvesting the deposited silicon filament;

Step (6): Cleaning the bell-shaped reactor and the base plate (Cleaning);

Step (7): a step of installing a silicon filament on the base plate (Filament install); And

Step (8): Closing the bell-shaped reactor and tightening with the base plate (Close)

As described above, the Siemens process is a combined process of decomposition and vapor deposition. Particularly, steps (4) to (8) are required to be performed by a worker, which is an obstacle to the expansion of mass production of polysilicon.

That is, the polysilicon manufacturing process by the Siemens process is a batch type in which a plurality of CVD reactors (for example, about 25 CVD reactors are required in the case of a polysilicon annual 10,000-ton scale plant) And the proportion of labor costs is high, which is a critical limitation in reducing manufacturing cost due to mass production.

It is an object of the present invention to provide a chemical vapor deposition (CVD) reactor capable of continuous reaction without requiring the operator to operate the apparatus.

It is another object of the present invention to provide a method for producing polysilicon using the chemical vapor deposition reactor.

According to an aspect of the present invention, there is provided a mobile communication terminal comprising: a base plate movable by a moving means; And

The present invention provides a chemical vapor deposition reactor comprising an enclosure in the form of a tunnel, wherein the enclosure is provided with a plurality of chambers, and adjacent chambers are separated by partition walls capable of opening and closing.

The present invention also provides a method of manufacturing a semiconductor device, comprising: loading a silicon filament onto a movable base plate;

Installing the base plate in an enclosure having a plurality of chambers and separated from each other by partition walls capable of opening and closing adjacent chambers; And

And performing a chemical vapor deposition (CVD) reaction by continuously passing the base plate loaded with the silicon filament through a plurality of chambers in the enclosure.

According to the chemical vapor deposition reactor and the method for producing polysilicon of the present invention, continuous CVD process is possible, which can drastically reduce manufacturing cost and enable mass production of polysilicon.

Figure 1 is a flow chart showing the process steps of a typical Siemens process.
2 is a view showing a CVD reactor according to an embodiment of the present invention.
3 is a view showing a base plate according to various embodiments of the present invention.
4 is a process diagram of polysilicon according to one embodiment of the present invention.

The terminology used herein is for the purpose of describing exemplary embodiments only and is not intended to be limiting of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, the terms "comprising," "comprising," or "having ", and the like are intended to specify the presence of stated features, But do not preclude the presence or addition of one or more other features, integers, steps, components, or combinations thereof.

Also in the present invention, when referring to each layer or element being "on" or "on" each layer or element, it is meant that each layer or element is formed directly on each layer or element, Layer or element may be additionally formed between each layer, the object, and the substrate.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

Hereinafter, the present invention will be described in detail.

The chemical vapor deposition (CVD) reactor of the present invention comprises a base plate movable by a moving means; And an enclosure in the form of a tunnel, wherein the enclosure is provided with a plurality of chambers, and adjacent chambers are separated by partition walls that can be opened and closed.

There is an increasing demand for high purity polysilicon used as a substrate in the manufacture of semiconductors or solar cells and therefore the need for mass production of high purity polysilicon is an important part of the development of the solar cell industry.

The polysilicon production process is roughly described as follows. First, the metal silicon obtained through the reduction process is reacted with a reaction gas such as hydrogen chloride or the like to be gasified with trichlorosilane or the like, and purified by distillation to remove impurities. Then, the silicon is subjected to a process of depositing silicon from the trichlorosilane from which the impurities have been removed by using a CVD reactor.

Among these processes, a Siemens process is generally used to deposit silicon from a silane reaction gas such as trichlorosilane using a CVD reactor. In the Siemens process, generally, a thin silicon filament is installed in a bell-jar type reactor, the silicon filament is heated through an electrode, and then trichlorosilane or the like is injected and pyrolyzed to deposit silicon on the slim rod .

At this time, there is no limitation on the shape of the reactor, and in addition to the electric heating through the electrode, the heating method of the silicon filament can also use a high-temperature radiation, a high frequency or an electromagnetic wave heating method and the reaction gas injected into the reactor is also limited to trichlorosilane It is also possible to use other silicon precursor materials or compound gases such as monosilane, dicholosilane and the like.

However, the Siemens process is a process in which decomposition and deposition are combined and is performed in a batch type process. After the silicon deposition is completed by the CVD method, the silicon filament that has been deposited is harvested, Cleaning and then installing the silicon filament on the base plate again to close the reactor, and so on.

Accordingly, the present invention provides a chemical vapor deposition (CVD) reactor in which the operation of a worker is unnecessary and can be continuously reacted with a single silicon rod, thereby enabling mass production of polysilicon.

The CVD reactor of the present invention comprises a base plate movable by a moving means; And a tunnel-type enclosure, wherein the enclosure is provided with a plurality of chambers, and adjacent chambers are separated by partition walls capable of opening and closing.

In the specification of the present invention, a chamber means an inner space in the enclosure which is divided and opened by a partition wall. Also, the interchamber is for convenience in referring to the chamber located between the one chamber and the other one chamber, and the concept of the chamber defined above also includes the interchamber.

The base plate is movable by a moving means and has a silicon filament supporting portion. The number of the silicon filament supports may be one or plural, and the present invention is not limited thereto. On the other hand, for mass production of silicon, the silicon filament supports may be plural.

According to one embodiment of the present invention, the CVD reactor may be used for the production of polysilicon by a continuous process.

The CVD reactor of the present invention has a tunnel-shaped enclosure that is not a bell-jar type capable of loading only one silicon filament at a time. In addition, the enclosure includes a plurality of chambers, and chambers adjacent to each other among the chambers are separated by partition walls that can be opened and closed. The length or shape of the tunnel is not particularly limited, and may be, for example, a straight line, a cross line, a U-line, an S-line, or the like.

Wherein the enclosure comprises: a base plate; And a series of silicon deposition processes including purging, heating, chemical vapor deposition, and cooling are performed to provide a confined space surrounding the upper and lower spaces of the base plate. The silicon deposition process is performed while the base plate is continuously passing through the plurality of chambers along the moving means in the enclosure.

According to an embodiment of the present invention, the conditions in each chamber such as the shape of the plurality of chambers, the gas atmosphere, the pressure, and the temperature may be independently adjustable according to the process to be performed.

According to an embodiment of the present invention, the partition may be opened or closed to sequentially pass the plurality of chambers as the base plate moves.

According to an embodiment of the present invention, the partition between adjacent chambers to be moved when the base plate moves between the chamber and the chamber is in an open state, and while the base plate is located in one of the chambers, Both chambers of the chamber to be located can be kept closed.

According to an embodiment of the present invention, the plurality of chambers may include a first chamber, a first interchamber, a second chamber, a second interchamber, an n-th chamber, an n-th interchamber, And an (n + 1) th chamber (where n is an integer of 3 or more).

Each of the chambers may be filled with a gas of a different atmosphere, and each of the inter chambers may be an atmosphere in which gases in both chambers adjacent to the inter chamber are mixed.

Hereinafter, the construction and operation of the CVD reactor according to an embodiment of the present invention will be described in more detail.

According to an embodiment of the present invention, the first chamber is a chamber through which a base plate loaded with a silicon filament is firstly injected into the enclosure.

The second chamber is provided with a first chamber for replacing the inside of the enclosure with an atmosphere of an inert gas such as nitrogen (N ₂ ) in order to block the inside of the enclosure from an external air atmosphere and replace it with an inert gas atmosphere, And is a zone for performing a purge process.

A first interchamber is provided between the first and second chambers. The first interchamber is configured to provide a buffer between the first and second chambers to prevent mixing of gases in the first and second chambers before the base plate moves from the first chamber to the second chamber. . Accordingly, the gas atmosphere of the first chamber is converted into the gas atmosphere of the second chamber while the base plate is positioned in the first inter-chamber, and then the gas is moved to the second chamber.

The first inter-chamber and the second inter-chamber are provided with a first partition wall between the first chamber and the first inter-chamber, and a second partition between the first inter-chamber and the second chamber, It can be opened and closed. That is, the first partition may be opened when the base plate moves from the first chamber to the first inter-chamber, and may be closed when the movement is completed. The second partition may be opened when the base plate moves from the first inter-chamber to the second chamber, and may be closed when the movement is completed.

Table 1 below shows the open-close state of the first and second barrier ribs according to the movement of the base plate.

Step work Base plate position 1, The second bank One The base plate is installed in the first chamber (injection) The first chamber Closed Closed 2 First bulkhead open The first chamber Open Closed 3 The base plate is moved to the first inter-chamber Between the first chamber and the first interchamber Open Closed 4 First bulkhead closed The first inter- Closed Closed 5 The first interchamber gas atmosphere change (air-> N ₂ ) The first inter- Closed Closed 6 The second bulkhead is opened. The first inter- Closed Open 7 The base plate is moved to the second chamber Between the first inter-chamber and the second chamber Closed Open 8 The second bank closing The second chamber Closed Closed 9 First purge The second chamber Closed Closed

Referring to Table 1, when the base plate is located in the first chamber, both the first and second partition walls are closed, and the base plate moves to the first inter-chamber as the first partition is opened. Since the spaces of the first chamber and the first inter-chamber are connected to each other during the movement of the base plate, the gas atmosphere of the first inter-chamber becomes an atmosphere in which the atmosphere of the first chamber and the nitrogen of the second chamber are mixed.

When the base plate is completely moved to enter the first inter-chamber, the first partition wall is closed, and the first chamber and the first inter-chamber are separated from each other to become a sealed space. Then, the gas atmosphere of the first inter-chamber is switched from the atmosphere to nitrogen.

When the conversion to the nitrogen atmosphere is completed, the second bank is opened and the base plate moves to the second chamber. When the base plate is completely moved to enter the second chamber, the second partition wall is closed, and the first inter-chamber and the second chamber are separated from each other to become a closed space.

In this way, the base plate is opened and closed in the first chamber, the first inter-chamber, the second chamber, the second inter-chamber, the n-th chamber, the n-th interchamber and the n + The process can be continuously performed while moving in accordance with the process.

The moving speed of the base plate and the time of staying in the chamber are adjustable according to the kind of process performed in each chamber and the speed at which the process proceeds.

And the third chamber is a space for performing an ignition process for heating the silicon filament to a high temperature. Accordingly, the third chamber may be a hydrogen (H ₂ ) gas atmosphere. The third chamber may include a high voltage application device or a heater for maintaining the silicon filament at a high temperature. In the third chamber, the temperature of the silicon filament may be maintained at a temperature ranging from room temperature to about 600 ° C, or from about 200 ° C to about 600 ° C.

And a second inter-chamber is provided between the second and third chambers. The second inter-chamber may be configured to allow the gas in the second and third chambers to be mixed before the base plate moves from the second chamber to a third chamber of a different gas and temperature atmosphere than the second chamber, And a space provided buffered between the second and third chambers. Accordingly, the gas atmosphere of the second chamber is converted into the gas atmosphere of the third chamber while the base plate is located in the second inter-chamber, and then the gas is moved to the third chamber.

In addition, a third partition may be provided between the second chamber and the second inter-chamber, a fourth partition may be provided between the second inter-chamber and the third chamber, and the third and fourth partition may be moved It can be opened and closed. That is, the third partition may be open when the base plate moves from the second chamber to the second inter-chamber, and may be closed when the movement is completed. Further, the fourth partition may be opened when the base plate moves from the second inter-chamber to the third chamber, and may be closed when the movement is completed.

The fourth chamber is a space for performing a process of depositing silicon on a silicon filament by injecting a silicon precursor compound containing silicon and hydrogen. The temperature of the silicon filament in the fourth chamber may be maintained at a high temperature of about 1,000 to about 1,200 ° C. The fourth chamber can also maintain a pressurization condition of from about 1 to about 10 atmospheres, preferably from about 3 to about 6 atmospheres for efficient deposition.

The fourth chamber may be the silicon precursor compound and a hydrogen gas atmosphere. In addition, HCl gas may be partially present by the silicon deposition reaction. Examples of the silicon precursor compound include SiHCl ₃ , SiH ₂ Cl ₂ , SiCl ₄ Or a mixture thereof may be used, but the present invention is not limited thereto.

And a third inter-chamber is provided between the third and fourth chambers. The third intercomchamber is configured to prevent the gases in the third and fourth chambers from mixing before the base plate moves from the third chamber to a fourth chamber of a different gas and temperature atmosphere than the third chamber, And a space provided between the third and fourth chambers in a buffered manner. Thus, while the base plate is positioned in the third inter-chamber, the gas atmosphere of the third chamber is converted into the gas atmosphere of the fourth chamber, and then moved to the fourth chamber.

In addition, a fifth partition may be provided between the third chamber and the third inter-chamber, and a sixth partition may be provided between the third inter-chamber and the fourth chamber, and the third and fourth partition walls may be moved It can be opened and closed. That is, the fifth partition may be opened when the base plate moves from the third chamber to the third inter-chamber, and may be closed when the movement is completed. The sixth partition may be opened when the base plate moves from the third inter-chamber to the fourth chamber, and may be closed when the movement is completed.

The fifth chamber is a space for performing a process of cooling the silicon filament completed with the silicon deposition. The fifth chamber may be continuously supplied with hydrogen gas at room temperature to cool the silicon filament.

And a fourth inter-chamber is provided between the fourth and fifth chambers. The fourth interchamber is configured to provide a buffering between the fourth and fifth chambers to prevent mixing of gases in the fourth and fifth chambers before the base plate moves from the fourth chamber to the fifth chamber. . Accordingly, while the base plate is positioned in the fourth inter-chamber, the gas atmosphere of the fourth chamber is converted into the gas atmosphere of the fifth chamber, and then the fifth chamber is moved to the fifth chamber.

The seventh and eighth partition walls may include a seventh partition wall between the fourth chamber and the fourth intercomchamber and an eighth partition wall between the fourth intercomchamber and the fifth chamber, It can be opened and closed. That is, the seventh partition may be opened when the base plate moves from the fourth chamber to the fourth inter-chamber, and may be closed when the movement is completed. The eighth partition may be opened when the base plate moves from the fourth inter-chamber to the fifth chamber, and may be closed when the base plate is moved from the fourth inter-chamber to the fifth chamber.

The sixth chamber is a space for performing a second purge process in which the silicon deposition is completed and the silicon filament is cooled again to an inert gas atmosphere such as nitrogen. The silicon filament stabilized in the nitrogen atmosphere of the sixth chamber can be discharged from the seventh chamber and harvested.

The ninth through twelfth partition walls are provided between the fifth chamber and the fifth intercomchamber, between the fifth intercomchamber and the sixth chamber, between the sixth chamber and the sixth intercomchamber, and between the sixth intercomchamber and the seventh chamber, respectively And their opening and closing methods are the same as those of the other partition walls.

According to an embodiment of the present invention, the moving means for moving the base plate in the CVD reactor may be a conveyor belt, and the base plate is movable along the traveling direction of the conveyor belt.

 According to an embodiment of the present invention, the enclosure may further include an injection unit for injecting the base plate into the enclosure, and a discharge unit for discharging the base plate to the outside of the enclosure.

According to an embodiment of the present invention, the apparatus may further include a silicon filament mounting portion positioned at a front end of the enclosure and a silicon filament collecting portion positioned at a rear end of the enclosure.

2 is a view showing a CVD reactor according to an embodiment of the present invention.

Referring to FIG. 2, the CVD reactor 200 of the present invention includes a base plate 80 movable by a moving means; And a tunnel type enclosure 130. The enclosure 130 is provided with a plurality of chambers 10, 10a, 20, 20a, 30, 30a, 40, 40a, 50, 50a, 60, 60a, G2, G3, G4, G5, G6, G7, G8, G9, G10, G11, and G12 that are openable and closable.

The plurality of chambers includes a first chamber 10, a first inter-chamber 10a, a second chamber 20, a second inter-chamber 20a, a third chamber 30, a third inter- The fourth inter-chamber 40a, the fifth inter-chamber 50a, the fifth inter-chamber 50a, the sixth chamber 60, the sixth inter-chamber 60a, and the fourth inter- A seventh chamber 70, and the like.

However, the shape of the chamber shown in FIG. 2 is not limited to the number of CVD reactors of the present invention, and the number of chambers and inter chambers may be added or subtracted as necessary. According to an embodiment of the present invention, the CVD reactor 200 further includes a conveyor belt 100 that travels in one direction by the moving means, and the base plate 80 moves along the traveling direction of the conveyor belt 100 It may be possible.

According to an embodiment of the present invention, the conveyor belt 100 travels in one direction and / or in an endless track so that the base plate 80 loaded with the silicon filament 90 is injected into the enclosure 130 , Performing the CVD process in the enclosure 130, and harvesting the polysilicon formed silicon filament 90. The process of FIG.

Although the silicon filament 90 is loaded on the base plate 80 and only two silicon filaments 90 are shown in the drawing of FIG. 2, the present invention is not limited thereto, and if necessary, one to several tens silicon The filament can be loaded. By increasing the number of silicon filaments loaded at once, the yield per hour of polysilicon can be further increased.

According to one embodiment of the present invention, the enclosure 130 includes an injection unit 110 for injecting the base plate 80 loaded with the silicon filament 90 into the enclosure 130, and a silicon filament 90 And a discharge unit 120 for discharging the base plate 80 to the outside of the enclosure 130.

According to an embodiment of the present invention, the base plate may be one in which a plurality of silicon filaments are loadable.

3 is a view showing a base plate according to various embodiments of the present invention.

Referring to FIG. 3, the base plate of the present invention can be manufactured by loading only one silicon filament as in Type A, loading a plurality of silicon filaments in a lateral direction as in Type B, or a plurality of silicon filaments Or a plurality of silicon filaments can be loaded in various forms such as loading a plurality of silicon filaments longitudinally and transversely as in Type D and E, or the like. It is also possible to load other forms or numbers not shown in FIG. 3, but the present invention is not limited thereto.

The CVD reactor of the present invention can continuously perform the silicon deposition by the Siemens process such as purging, deposition, and cooling in a single enclosure, minimizing the work of the operator and automating the process, Filaments can be loaded, which can dramatically increase polysilicon production per unit time.

Further, when the conventional bell-type reactor is used, the process is carried out while continuously changing the purge gas as the process proceeds in one chamber. However, the reactor of the present invention requires that the process performed for each chamber is fixed, It is not necessary to continuously change the purge gas in one chamber, and the purging time and purge amount of the gas can also be reduced.

As a result, it is possible to mass-produce polysilicon and reduce manufacturing costs.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: loading a silicon filament onto a movable base plate;

Installing the base plate in an enclosure having a plurality of chambers and separated from each other by partition walls capable of opening and closing adjacent chambers; And

And performing a chemical vapor deposition (CVD) reaction by continuously passing the base plate loaded with the silicon filament through a plurality of chambers in the enclosure.

The method for producing the polysilicon of the present invention can be carried out using the chemical vapor deposition reactor described above.

4 is a view showing a method for producing polysilicon of the present invention.

Referring to FIG. 4, first, a silicon filament is loaded on a base plate. The base plate on which the silicon filament is loaded is moved by a moving means moving in one direction like a conveyor belt and is injected into the first chamber of the tunnel-shaped enclosure.

Next, after the base filament is installed in the first chamber, as the first partition between the first chamber and the first inter-chamber is opened, the base plate is moved by the moving means to be positioned in the first inter-chamber , And the first partition wall is closed when the base plate is completely positioned in the first inter-chamber.

The first inter-chamber is in an atmosphere where air and nitrogen (N ₂ ) are mixed. That is, the first inter-chamber is a space buffered to change from the gas atmosphere of the first chamber to the gas atmosphere of the second chamber located next.

Next, as the second partition wall between the first inter-chamber and the second chamber is opened, the base plate is moved by the moving means to be located in the second chamber, and the base plate is completely positioned in the second chamber The second partition wall is closed.

And performing a first purge step of purifying nitrogen (N ₂ ) gas in the second chamber when the base plate is positioned in the second chamber and the second partition is completely closed to be in a sealed state.

When the gas atmosphere of the second chamber is substantially completely displaced into the nitrogen atmosphere, the third partition between the second chamber and the second inter-chamber is opened, and the base plate passes through the open third partition, And is located in the second inter-chamber.

The second inter-chamber is present in an atmosphere in which nitrogen (N ₂ ) and hydrogen (H ₂ ) are mixed. That is, the second inter-chamber is a space provided to be buffered to change into the gas atmosphere of the third chamber located next in the gas atmosphere of the second chamber.

Next, as the fourth partition between the second inter-chamber and the third chamber is opened, the base plate is moved by the moving means to be positioned in the third chamber, and the base plate is completely positioned in the third chamber The fourth partition wall is closed.

When the base plate is located in the third chamber and the fourth partition is completely closed to be in a sealed state, the heating step of heating the silicon filament in a hydrogen atmosphere in the third chamber is performed.

In the third chamber of the hydrogen atmosphere, a high voltage may be applied to the silicon filament, or an external heater may be used to maintain a high temperature. For example, the temperature may be maintained in the third chamber by heating the silicon filament to a temperature ranging from room temperature to about 600 ° C, or from about 200 ° C to about 600 ° C.

Next, after the third chamber is replaced with a hydrogen atmosphere and a high temperature state for silicon deposition is maintained, as the fifth partition between the third chamber and the third chamber opens, the base plate is moved by the moving means And is located in the third inter-chamber, and when the base plate is fully positioned in the third inter-chamber, the partition is closed.

The third inter-chamber is present in an atmosphere in which hydrogen (H ₂ ) and a silicon precursor gas are mixed. That is, the third inter-chamber is a space buffered to change the gas atmosphere of the third chamber to the gas atmosphere of the fourth chamber located next.

When the gas atmosphere of the third inter-chamber reaches the same pressure as that of the fourth chamber, the sixth partition between the third inter-chamber and the fourth chamber is opened, and the base plate passes through the open sixth partition And is moved to the fourth chamber by the moving means.

In the fourth chamber of the mixed gas atmosphere, a silicon precursor compound such as SiHCl ₃ , SiH ₂ Cl ₂ , SiCl ₄ or the like reacts with hydrogen to deposit silicon on a high-temperature silicon filament by a chemical vapor deposition (CVD) method.

Next, when the silicon deposition in the fourth chamber is completed, as the seventh barrier between the fourth chamber and the fourth inter-chamber is opened, the base plate is moved by the moving means to be positioned in the fourth inter- And when the base plate is completely positioned in the fourth inter-chamber, the seventh partition is closed.

When the base plate is positioned in the fourth inter-chamber and the seventh inter-chamber is completely closed to be in a closed state, hydrogen (H ₂ ) gas is purged into the fourth inter-chamber to replace the mixed gas atmosphere with hydrogen atmosphere. In this case, the fourth inter-chamber is present in a mixed atmosphere of silicon precursor gas and hydrogen. That is, the fourth inter-chamber is buffered to change to the gas atmosphere of the fifth chamber located next in the gas atmosphere of the fourth chamber.

When the gas atmosphere of the fourth inter-chamber reaches a pressure equal to that of the fifth chamber, the eighth partition between the fourth inter-chamber and the fifth chamber is opened, and the base plate passes through the open eighth partition Is moved by child means and is located in the fifth chamber.

In the fifth chamber of the hydrogen atmosphere, hydrogen gas at room temperature can be continuously supplied to gradually cool the silicon filament that has been deposited.

Next, when the silicon filament is sufficiently cooled in a hydrogen atmosphere, as the ninth partition wall between the fifth chamber and the fifth intercomchamber is opened, the base plate is moved by the moving unit to be located in the fifth intercomchamber, When the base plate is completely positioned in the fifth inter-chamber, the ninth bank is closed.

When the base plate is positioned in the fifth inter-chamber and the ninth partition is completely closed to be in a sealed state, nitrogen gas is purged into the fifth inter-chamber to replace the hydrogen atmosphere with the nitrogen atmosphere. The fifth inter-chamber is present in a mixed atmosphere of hydrogen and nitrogen. That is, the fifth inter-chamber is a space provided to be buffered to change into the gas atmosphere of the sixth chamber located next in the gas atmosphere of the sixth chamber.

When the gas atmosphere of the fifth inter-chamber reaches a pressure equal to that of the sixth chamber, a tenth partition between the fifth inter-chamber and the sixth chamber is opened, and the base plate passes through the tenth partition And is moved to the sixth chamber by the moving means.

And a second purge step of purifying nitrogen (N ₂ ) gas in the sixth chamber when the base plate is positioned in the sixth chamber and the tenth partition is completely closed to be in a sealed state.

When the gas atmosphere of the sixth chamber is substantially completely displaced into the nitrogen atmosphere, the eleventh partition between the sixth chamber and the sixth inter-chamber is opened, and the base plate passes through the open eleventh partition to the moving means And is located in the sixth inter-chamber.

The sixth inter-chamber is present in an atmosphere in which nitrogen (N ₂ ) and air in the sixth chamber are mixed. That is, the sixth inter-chamber is a space provided to be buffered to change to the gas atmosphere of the seventh chamber located next in the gas atmosphere of the sixth chamber.

Next, as the twelfth partition wall between the sixth inter-chamber and the seventh chamber is opened, the base plate is moved by the moving means to be positioned in the seventh chamber, and the base plate is completely positioned in the seventh chamber The twelfth partition is closed.

The base plate on which the silicon deposition is completed can be harvested from the seventh chamber.

The above-described method of manufacturing the polysilicon of the present invention can continuously perform the silicon deposition by the Siemens process such as installation in a single enclosure, purging, evaporation, cooling, harvesting, etc., , It is possible to load a large number of silicon filaments at a time according to the scale, and the production amount of polysilicon per unit time can be dramatically increased.

In the reactor of the present invention, since the process performed for each chamber is fixed and the base plate is moved continuously, it is not necessary to continuously change the purge gas in one chamber, so that the purge time and purge amount Can also be reduced. As a result, it is possible to mass-produce polysilicon and reduce manufacturing costs.

Best Mode for Carrying Out the Invention Hereinafter, the function and effect of the present invention will be described in more detail through specific examples of the present invention. It is to be understood, however, that these embodiments are merely illustrative of the invention and are not intended to limit the scope of the invention.

< Example >

Example  One

The process for producing polysilicon using the chemical vapor deposition apparatus shown in FIG. 2 was simulated using PolySim ^TM (manufactured by STR, Russia). In this case, the number of the silicon filaments to be loaded at one time is 10 (two filaments correspond to one silicon U rod and 5 U rods), the weight of one silicon U rod is 140 kg, the length of one filament is Respectively.

The atmosphere in each chamber, the process to be performed, and the time required are summarized in Table 2 below.

chamber fair atmosphere Time
(Unit: hour) In the first chamber 10, Silicon filament installation (install) air 0.5 In the first interchamber 10a, Gas atmosphere substitution air↔N ₂ 0.5 In the second chamber 20, The first purge (1 ^st purge) N ₂ 0.5 In the second inter-chamber 20a, Gas atmosphere substitution N ₂ ↔ H ₂ 0.5 In the third chamber 30, Filament heating
(ignition) H ₂ 0.5 The third inter-chamber 30a, Gas atmosphere substitution H ₂ ↔ Si precursor 0.5 In the fourth chamber 40, Deposition Si precursor, H ₂ 60 The fourth inter-chamber 40a, Gas atmosphere substitution Si precursor ↔ H ₂ 0.5 In the fifth chamber 50, Cooling H ₂ 10 In the fifth inter-chamber 50a, Gas atmosphere substitution H ₂ ↔ N ₂ 0.5 In the sixth chamber 60, The second purge (2 ^nd purge) N ₂ 0.5 In the sixth inter-chamber 60a, Gas atmosphere substitution N ₂ ↔air 0.5 In the seventh chamber 70, Silicon filament harvest air 0.5 total 75.5

When the process was simulated as in Example 1, the amount of polysilicon that can be produced per hour from one silicon U rod was 280 kg / ea hr. If we translate this into annual output, we can achieve 11,200 tons / year of production assuming that we operate 8,000 hours a year (91% utilization rate).

Example  2 to 10

Except that the number of silicon filaments loaded at one time and the length of the silicon filaments were different.

For each case, the annual production that can be produced when operating 8,000 hours a year (about 91% utilization) is summarized in Table 3 below.

Example No. 2. Length of silicon filament (unit: mm) Number of silicon U loads loaded at one time Polysilicon production per hour
(Unit: kg / ea · hr) Annual production
(Unit: ton / year) Example 2 1,500 One 168 1,344 Example 3 1,500 4 168 5,376 Example 4 1,500 12 168 16,128 Example 5 2,000 One 224 1,792 Example 6 2,000 4 224 7,168 Example 7 2,000 12 224 21,504 Example 8 2,500 One 280 2,240 Example 9 2,500 4 280 8,960 Example 10 2,500 12 280 26,880

It can be seen that the production amount of the polysilicon according to the present invention can be remarkably increased as compared with the annual production amount of the polysilicon by the Siemens process of the general arrangement type is about 400 tons / .

10, 10a, 20, 20a, 30, 30a, 40, 40a, 50, 50a, 60, 60a,
G1, G2, G3, G4, G5, G6, G7, G8, G9, G10,
80: base plate
90: Silicone filament
100: Conveyor belt
110:
120:
130: Enclosure
200: CVD reactor

Claims (18)

A base plate movable by a moving means; And
A chemical vapor deposition (CVD) reactor, comprising a tunnel-type enclosure, wherein the enclosure is provided with a plurality of chambers and adjacent chambers are separated by openable and closable partition walls.
The chemical vapor deposition reactor according to claim 1, wherein the moving means is a conveyor belt, and the base plate is movable along the traveling direction of the conveyor belt.
The chemical vapor deposition reactor according to claim 1, wherein the base plate is capable of loading a plurality of silicon filaments.
The chemical vapor deposition reactor according to claim 1, wherein the gas atmosphere of the plurality of chambers is adjustable independently.
2. The chemical vapor deposition reactor as claimed in claim 1, wherein the partition walls are opened and closed to sequentially pass the plurality of chambers as the base plate moves.
The apparatus as claimed in claim 5, wherein when the base plate moves between the chambers, the partition wall between the adjacent chambers to be moved is in an open state, and while the base plate is located in one of the chambers, Wherein both the partition walls of the reactor are kept closed.
The apparatus of claim 1, wherein the plurality of chambers comprises a first chamber, a first inter-chamber, a second chamber, a second inter-chamber, ... n-th chamber, And an (n + 1) th chamber, wherein n is an integer greater than or equal to 3.
8. The method of claim 7, wherein the plurality of chambers comprises a first chamber of an atmospheric atmosphere, a second chamber of a nitrogen atmosphere, a third chamber of a hydrogen atmosphere, a fourth chamber of a mixed gas atmosphere of a silicon precursor compound and hydrogen, A fifth chamber, a sixth chamber in a nitrogen atmosphere, and a seventh chamber in an atmospheric environment.
The method of claim 8, wherein the silicon precursor compound is at least one selected from the group consisting of SiHCl ₃ , SiH ₂ Cl ₂ , and SiCl ₄ . Chemical vapor deposition reactor.
2. The chemical vapor deposition reactor according to claim 1, wherein the enclosure further comprises an injection section for injecting the base plate into the enclosure and a discharge section for discharging the base plate.
9. The chemical vapor deposition reactor according to claim 8, wherein a base plate is injected into the first chamber, and a base plate from which the silicon deposition is completed is withdrawn from the seventh chamber.
The chemical vapor deposition reactor according to claim 1, wherein the chemical vapor deposition reactor is used for producing polysilicon.
Loading a silicon filament onto a movable base plate;
Installing the base plate in an enclosure having a plurality of chambers and separated from each other by partition walls capable of opening and closing adjacent chambers; And
And performing a chemical vapor deposition (CVD) reaction by passing the base plate loaded with the silicon filament continuously through a plurality of chambers in the enclosure.
14. The apparatus of claim 13, wherein the plurality of chambers comprises a first chamber, a first inter-chamber, a second chamber, a second inter-chamber, ... n-th chamber, And an (n + 1) th chamber, wherein n is an integer greater than or equal to 3.
15. The method of claim 14, wherein the step of performing the chemical vapor deposition reaction while the base plate loaded with the silicon filaments passes through the plurality of chambers separated by the partition walls capable of being opened and closed,
Loading the base plate into a first chamber;
Purging the nitrogen in the second chamber;
Heating the silicon filament in a third chamber;
Depositing silicon on the silicon filament by reaction with a silicon precursor compound and hydrogen in a fourth chamber;
Cooling the silicon filament in a fifth chamber;
Purging the nitrogen in the sixth chamber; And
And harvesting silicon filaments deposited with silicon in a seventh chamber.
16. The method of claim 15, wherein the silicon precursor compound is at least one selected from the group consisting of SiHCl ₃ , SiH ₂ Cl ₂ , and SiCl ₄ . Method of manufacturing polysilicon.
14. The apparatus of claim 13, wherein a partition between adjacent chambers that are intended to move when the base plate moves between chambers is in an open state, and while the base plate is located within one of the chambers, And both the partition walls are kept closed.
14. The method of claim 13, wherein a plurality of silicon filaments are loaded on the base plate.

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