CN217230927U - Multi-cavity chemical vapor deposition equipment - Google Patents
Multi-cavity chemical vapor deposition equipment Download PDFInfo
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- CN217230927U CN217230927U CN202123150804.4U CN202123150804U CN217230927U CN 217230927 U CN217230927 U CN 217230927U CN 202123150804 U CN202123150804 U CN 202123150804U CN 217230927 U CN217230927 U CN 217230927U
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- vapor deposition
- chemical vapor
- hot wire
- deposition apparatus
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 31
- 230000009347 mechanical transmission Effects 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000001816 cooling Methods 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 19
- 238000000746 purification Methods 0.000 claims abstract description 16
- 238000009826 distribution Methods 0.000 claims abstract description 14
- 239000000498 cooling water Substances 0.000 claims abstract description 6
- 230000005540 biological transmission Effects 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 23
- 238000005192 partition Methods 0.000 claims description 22
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 abstract description 6
- 230000003028 elevating effect Effects 0.000 abstract description 5
- 208000002925 dental caries Diseases 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 44
- 239000007789 gas Substances 0.000 description 35
- 238000000151 deposition Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 239000011521 glass Substances 0.000 description 8
- 229910003460 diamond Inorganic materials 0.000 description 7
- 239000010432 diamond Substances 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010791 quenching Methods 0.000 description 3
- 230000000171 quenching effect Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000012864 cross contamination Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000007086 side reaction Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- -1 diborane Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- Chemical Vapour Deposition (AREA)
Abstract
The utility model provides a multi-chamber chemical vapor deposition equipment, including two at least cavitys that set up side by side, the setting is between two adjacent cavitys with the baffle of cavity intercommunication, the base plate of setting in every cavity, premixing device, gas distribution system, heater heating system, mechanical transmission system, water cooling system, the elevating platform, the heat exchange system who all is connected with the bottom of every cavity, the vacuum pump that links to each other in proper order with heat exchange system, tail gas purification system, the active gas jar that all is connected with the top of every cavity and the cooling water purification system who links to each other with water cooling system. The utility model discloses a but the multicavity is the nimble application, and when the settling time was longer, can make each cavity carry out the deposit simultaneously, and when technological condition and order were complicated, deposition process can transmit according to the technology order in the multicavity to adopt common general engineering system, distribution system, automatic system, tail gas and circulating water processing system, save hardware investment and running cost.
Description
Technical Field
The utility model relates to a chemistry technical field, concretely relates to multi-chamber chemical vapor deposition equipment.
Background
Typical chemical vapor deposition processes expose a substrate to one or more different precursors, and allow the multiple vapors to chemically react and/or decompose under reaction conditions such as high temperature, plasma, etc., to produce a deposited film on the substrate surface. Compared with the plasma technology, the hot wire method can prepare large-area diamond films, has the lowest comprehensive cost and has good industrial popularization potential.
At present, equipment of mainstream equipment manufacturers on the market generally only has one reaction cavity, and can not carry out multiple processes simultaneously, and because the components and the flow of gas phases are different and the required temperature is different when films with different layers and different sizes are deposited, when another process is carried out after one process is finished, the time for changing reaction conditions is longer, so that higher cost is caused, defects are also caused, and quality problems are caused. For example, when a diamond film material is deposited, the required working temperature ranges from 1600 ℃ to 2400 ℃, the reaction pressure is between 5 and 100 mbar, the reacted gas phase forms different permutation and combination in hydrogen, methane, diborane, oxygen and nitrogen, and the method is suitable for films with different forms, and the service life of the hot wire is greatly influenced by the process and gas phase adjustment, so that the quality is relatively poor, the operation cost is high, the equipment cavity is only suitable for one arrangement mode, and the yield of a single cavity is too low under the same reaction condition, so that the large-scale industrial production and market requirements cannot be met; the application scenario of single-cavity devices is also often limited, and devices that lay flat on a substrate cannot be used for deposition of vertically-placed substrates.
Disclosure of Invention
The utility model provides a multi-cavity chemical vapor deposition device for solving the defect of single-cavity device, in particular to a multi-cavity diamond deposition, amorphous silicon coating and semiconductor material hydrogen etching device which is suitable for high yield and multiple process links, the chambers are linked by the opening and closing of the partition board arranged in the middle of the chamber, the deposition time is longer, can simultaneously deposit in each cavity, and when the process conditions and the sequence are complex, the deposition process can be transmitted in a multi-cavity according to the process sequence, and adopts a common general engineering system, a power distribution system, an automation system and a tail gas and circulating water treatment system, thereby saving the hardware investment and the operation cost, can simultaneously improve the quality of a deposited film, reduce the operation cost, realize large-scale industrialization and be suitable for simultaneously depositing base materials placed in a plane and a vertical way.
The utility model provides a multi-cavity chemical vapor deposition device, which comprises at least two cavities arranged in parallel, a clapboard arranged between the two adjacent cavities and communicated with the cavities, a base plate arranged in each cavity, a premixing device, a gas distribution system, a hot wire heating system, a mechanical transmission system, a water cooling system, a lifting platform, a heat exchange system connected with the bottom of each cavity, a vacuum pump and a tail gas purification system sequentially connected with the heat exchange system, an active gas tank connected with the top of each cavity and a cooling water purification system connected with the water cooling system;
the premixing device, the gas distribution system and the hot wire heating system are all arranged above the base plates, the mechanical transmission system and the lifting platform are all arranged below each base plate, and the water cooling system is connected with each cavity;
the hot wire heating system comprises a hot wire bracket, a hot wire body fixed on the hot wire bracket and electrodes arranged at two ends of the hot wire body and connected with the hot wire body;
the number of the vacuum pumps, the tail gas purification system and the active gas tank is 1.
A multi-chamber chemical vapor deposition equipment, as preferred mode, the cavity is double-deck cavity, water cooling system sets up in double-deck cavity.
A multi-chamber chemical vapor deposition equipment, as preferred mode, the baffle is fixed division board, sets up the window that can open and shut on the baffle, the window can be passed to the base plate.
A multi-chamber chemical vapor deposition equipment, as preferred mode, the baffle is liftable baffle.
A multi-chamber chemical vapor deposition equipment, as preferred mode, the electrode is the molybdenum electrode.
A multi-chamber chemical vapor deposition equipment, as preferred mode, mechanical transmission system is including setting gradually objective table, the track in the base plate bottom, the transmission that links to each other with the track and the control system who links to each other with transmission.
A multi-chamber chemical vapor deposition equipment, as preferred mode, transmission includes following arbitrary one: the device comprises a screw rod transmission device, a chain transmission device, a transmission roller and a mechanical arm.
The multi-cavity chemical vapor deposition equipment of the utility model adopts a preferable mode that the transmission device is a screw rod transmission device,
a multi-chamber chemical vapor deposition equipment, as preferred mode, the elevating platform sets gradually lifting support, base and the electrical system who is connected with lifting support in the bearing platform bottom including setting up the bearing platform in mechanical transmission system bottom.
A multi-chamber chemical vapor deposition equipment, as preferred mode, still including setting up at cavity middle part and sight glass system of lower part, the lower part and the mechanical transmission system of sight glass system are parallel.
The utility model provides an equipment design scheme is: a multi-cavity chemical vapor deposition device comprises an integrated gas supply system, a double-layer cavity, a base material transmission system, a hot wire assembly, a liftable objective table series, a circulating water comprehensive treatment system, a tail gas treatment system and a sight glass system. Under the complex process reaction condition, each cavity is provided with an independent gas flow valve, a hot wire assembly, a vacuum pump and a lifting platform, so that deposition films of different materials can be independently finished, the negative influence during process switching can be avoided according to the process sequence and with the help of the lifting platform, and the processing flows of different process sections of the same substrate can be finished. When the process reaction conditions are fundamentally changed or toxic and high-pollution substances are generated in the process section, one cavity in a multi-cavity can be customized for the process section, and the problems of cavity reaction safety, cavity cleaning, pollution and the like are solved in a targeted manner.
The gas supply system comprises an active gas tank, a gas input pipeline, a gas distribution system, a premixing device, a vacuum pump and an output pipeline;
the substrate conveying system comprises a track fixer, a conveying track, a screw rod and a control system, wherein the control system can be a manual system or an automatic system.
The double-layer cavity comprises a cavity cooling system used in high-temperature vapor deposition, the circulating water cooling system comprises a purification system, and two modes of fixing isolation plates and lifting isolation plates are arranged between the cavities; the hot wire component comprises a hot wire, an electrode and a hot wire fixing frame;
the liftable objective table system comprises an electronic control system, a lifting support, an objective table and a base, can finish fine adjustment and accurate positioning, has a lifting stroke of 50-100cm, can meet the requirements of different sizes and different placing positions, and can deposit horizontal and vertical placing base materials;
the sight glass system is positioned in the middle and the lower part of the cavity, and the lower sight glass system is parallel to the substrate transmission system.
The realization of big cavity increases the volume in the cavity through reducing the elevating platform, and the objective table can accomplish the deposit that parallel and perpendicular two kinds of modes were accomplished, deposit different products, and is three-dimensional, planar.
The utility model has the advantages of it is following:
(1) under the condition of longer deposition time, such as a diamond film and an amorphous silicon film, but not limited to the diamond film and the amorphous silicon film, the deposition can be simultaneously carried out in equipment with three, ten or more cavities, and the industrial preparation of the film material is completed in a large scale at one time by adopting a common general engineering system, a power distribution system, an automation system and a tail gas and circulating water treatment system, so that the hardware investment cost and the operation cost are saved.
(2) Under complicated process conditions and sequences, the deposition process can be carried out in a single cavity according to the process conditions, and the distances between the substrate and the hot wire and between the substrate and the gas distribution system are adjusted through the lifting table, so that side reactions are avoided, and the product quality is prevented from being influenced.
(3) Under complex process conditions and sequences, a deposition process can be transferred in a multi-cavity according to a process sequence, particularly in a process section which can generate toxic and high-pollution substances, a relatively independent cavity is particularly important, special materials and a safe treatment process can be adopted, cavity cleaning and tail gas treatment can be completed in a targeted manner, meanwhile, the risk of cross contamination of different process sections in the same cavity is avoided, the time of a deposition reaction is saved, the safety is improved, and the service lives of the cavity and equipment are prolonged.
(4) The utility model takes the process as the guide, is suitable for the HWCVD process design process and the product processing process, and is suitable for simultaneous operation, mutual noninterference and capacity increase under the same process condition; under different process conditions, different processing processes are completed through transmission, and time cost and hot wire loss are saved.
Drawings
FIG. 1 is a schematic structural diagram of a multi-chamber chemical vapor deposition apparatus;
FIG. 2 is a schematic view of a hot wire heating system of a multi-chamber chemical vapor deposition apparatus;
FIG. 3 is a schematic view of a mechanical transmission system of a multi-chamber CVD apparatus;
FIG. 4 is a schematic view of a multi-chamber CVD tool lift table.
Reference numerals:
1. a cavity; 2.a partition plate; 3. a substrate; 4. a premixing device; 5. a gas distribution system; 6. a hot wire heating system; 61. a hot wire holder; 62. a hot wire body; 63. an electrode; 7. a mechanical transmission system; 71. an object stage; 72. a track; 73. a transmission device; 74. a control system; 8. a water cooling system; 9. a lifting platform; 91. a load-bearing platform; 92. A lifting support; 93. a base; 94. an electronic control system; 10. a heat exchange system; 11. a vacuum pump; 12. an exhaust gas purification system; 13. a reactive gas tank; 14. a cooling water purification system; 15. a sight glass system.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments.
Example 1
As shown in fig. 1, a multi-chamber chemical vapor deposition apparatus comprises at least two chambers 1 arranged in parallel, a partition plate 2 arranged between two adjacent chambers and communicated with the chambers 1, a substrate 3 arranged in each chamber 1, a premixing device 4, a gas distribution system 5, a hot wire heating system 6, a mechanical transmission system 7, a water cooling system 8, a lifting platform 9, a heat exchange system 10 connected with the bottom of each chamber 1, a vacuum pump 11 and a tail gas purification system 12 sequentially connected with the heat exchange system 10, an active gas tank 13 connected with the top of each chamber 1, a cooling water purification system 14 connected with the water cooling system 8, and viewing mirror systems 15 arranged at the middle and lower parts of the chambers 1;
the premixing device 4, the gas distribution system 5 and the hot wire heating system 6 are all arranged above the base plates 3, the mechanical transmission system 7 and the lifting platform 9 are all arranged below each base plate 3, and the water cooling system 8 is connected with each cavity 1;
the number of the vacuum pump 11, the tail gas purification system 12 and the active gas tank 13 is 1; the cavity 1 is a double-layer cavity, and the water cooling system 8 is arranged in the double-layer cavity;
the partition board 2 is a fixed partition board, a window which can be opened and closed is arranged on the partition board 2, and the base plate 3 can pass through the window;
or the baffle plate 2 is a liftable baffle plate;
as shown in fig. 2, the hot wire heating system 6 includes a hot wire holder 61, a hot wire body 62 fixed on the hot wire holder 61, and electrodes 63 disposed at both ends of the hot wire body 62 and connected to the hot wire body 62; the electrode 63 is a molybdenum electrode;
as shown in fig. 3, the mechanical transmission system 7 includes a stage 71, a rail 72, a transmission device 73 connected to the rail 72, and a control system 74 connected to the transmission device 73, which are sequentially disposed at the bottom of the substrate 3;
the transmission 73 includes any one of: the device comprises a screw rod transmission device, a chain transmission device, a transmission roller and a mechanical arm;
the transmission 73 is a screw rod transmission;
as shown in fig. 4, the lifting platform 9 includes a bearing platform 91 disposed at the bottom of the mechanical transmission system 7, a lifting support 92 disposed at the bottom of the bearing platform 91, a base 93, and an electric control system 94 connected to the lifting support 92;
the lower part of the mirror system 15 is parallel to the mechanical transmission system 7.
Example 2
Referring to fig. 1, a multi-chamber chemical vapor deposition apparatus is composed of a plurality of chambers, the number of the chambers is not limited to that shown in fig. 1, and the apparatus is tailored according to the requirement of industrial mass production or the complexity of the production process.
The multi-cavity equipment comprises at least two cavities 1 arranged in parallel, a partition plate 2 arranged between every two adjacent cavities and communicated with the cavities 1, a base plate 3 arranged in each cavity 1, a premixing device 4, a gas distribution system 5, a hot wire heating system 6, a mechanical transmission system 7, a water cooling system 8, a lifting platform 9, a heat exchange system 10 connected with the bottom of each cavity 1, a vacuum pump 11 and a tail gas purification system 12 sequentially connected with the heat exchange system 10, an active gas tank 13 connected with the top of each cavity 1, a cooling water purification system 14 connected with the water cooling system 8 and a sight glass system 15 arranged at the middle part and the lower part of each cavity 1;
the plurality of cavities 1 of the equipment can be isolated by the partition boards 2, and when the substrates are transmitted among the cavities 1, the partition boards can be opened and closed by a fixed installation system or a control system.
The partition boards 2 among the cavities 1 of the device can be installed in a fixed mode, the cavities 1 can keep a transfer window with a certain specification, the design of the size of the window can be realized by horizontally placing the substrate and the small-volume vertical base material, the multi-cavity intercommunication mode is suitable for simultaneously opening the cavities to deposit films under the same active gas and the same reaction condition, and the device is suitable for the industrial large-scale production mode of the same film material.
The partition boards 2 among the cavities of the device can also adopt a liftable partition board form, and the transfer windows among the cavities 1 can be opened or closed as required. It can be shut down when deposition is performed under different process conditions, or to avoid cross-contamination between chambers.
As shown in fig. 2, the hot wire heating system 6 includes a hot wire holder 61, a hot wire 62, and a molybdenum electrode 63.
As shown in FIG. 3, the transmission between the chambers 1 is accomplished by a mechanical transmission system 7, which includes a stage 71, a rail 72, a screw 73 and a control system 74.
Mechanical transmission between a plurality of cavitys of this equipment passes through the hob, or the chain, or driving roller, or modes such as arm are accomplished, preferred hob mode, and stable track installation guarantees that the conveying of base plate between each cavity is the deviation not appeared, through the sight glass parallel with the track, can adjust the base plate at any time, and the adjustment mode can be electronic, also can accomplish through manual mode.
As shown in fig. 4, the lifting 9 platform includes a base 91, a lifting bracket 92, a load bearing system 93, and an electrical control system 94.
The lifting platform of the equipment can be matched with multiple cavities to finish industrial scale production, the whole deposition process can be finished in a single cavity even under complex process conditions, the height of the lifting platform can be adjusted during process change, such as the change of temperature, active gas and other parameters, the lifting platform is properly far away from a hot wire, and the occurrence of side reaction and the influence on product quality are avoided.
The elevating platform 9 of this equipment can carry out when 3 windows of baffle between cavity 2 are less, reduces the operation, increases the window size, and the base material that is convenient for great, vertical type to place passes through, carries between each cavity.
The elevating platform 9 of the equipment can adjust the height of each cavity 1 at the same time, so that the conveying stability is realized.
The lifting platform 9 of the equipment can respectively adjust the height of each cavity 1, and deposition under different process parameters is realized.
The working process of amorphous silicon deposition using the vapor deposition apparatus of example 1 or 2 was: the No. 2 cavity is closed and connected with the baffle plate 2, the vacuum is pumped to 100 millibars, and a hot wire heating system 6 is started;
placing the pretreated wafer or substrate on an object stage of a No. 1 cavity, closing the connection of the cavity and a partition plate 2 between the cavities, vacuumizing to 100 mbar, and starting a hot wire heating system 6; preheating the wafer or substrate in the cavity 1 to 150 ℃ and starting the partition plate 2 between the cavity 1 and the cavity 2, transferring the object stage to the cavity 2 through the mechanical transmission system 7, preheating the cavity 2 to a specified temperature, introducing hydrogen and silicon-containing gas, heating the wafer or substrate to 450 ℃ and keeping the temperature for a period of time;
in the process of treating the cavity No. 2, the cavity No. 3 closes the window connection between the cavity and the cavity, the cavity is vacuumized to 50 mbar, and a hot wire heating system is started for preheating;
the wafer or substrate after reaction in the cavity 2 is transferred to the cavity 3 through the processes of opening the partition plate and transporting, and is quenched at the temperature of 150 ℃.
In the quenching process, the process is repeated, so that three processes of preheating, high-temperature treatment and low-temperature quenching are continuously completed, the temperature is not required to be adjusted repeatedly, the time of the whole process is shortened, the influence of process change on hot wires is reduced, and the operation cost is saved.
The working process of diamond deposition using the vapor deposition apparatus of example 1 or 2 was: putting the pretreated wafer or substrate on the object stages of all the cavities 1 at the same time, wherein the connection of the partition boards 2 between the two cavities 1 can be selected to be not closed, vacuumizing to 100 millibar, the 2.A stage is lowered by the 14 lifting stage to make the distance between the wafer or substrate and the hot wire longer, hydrogen is introduced, and the 6 hot wire heating system is started, when the temperature of the hot wire reaches 2200-, after the deposition process is finished, the methane is closed, the hydrogen atmosphere is kept, the 2.A objective table is lowered again through the 14 lifting table, so that the wafer or the substrate and the hot wire are quenched at a longer distance, a film with better quality can be deposited at the beginning, the quenching process is better finished, under the condition of shortening the deposition time, the quality of the diamond film is improved, and the requirement of industrial production can be met through a plurality of cavities.
The above, only be the concrete implementation of the preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art is in the technical scope of the present invention, according to the technical solution of the present invention and the utility model, the concept of which is equivalent to replace or change, should be covered within the protection scope of the present invention.
Claims (10)
1. A multi-chamber chemical vapor deposition apparatus, characterized by: the device comprises at least two cavities (1) which are arranged in parallel, a partition plate (2) which is arranged between every two adjacent cavities and communicated with the cavities (1), a substrate (3) which is arranged in each cavity (1), a premixing device (4), a gas distribution system (5), a hot wire heating system (6), a mechanical transmission system (7), a water cooling system (8), a lifting platform (9), a heat exchange system (10) which is connected with the bottom of each cavity (1), a vacuum pump (11) and a tail gas purification system (12) which are sequentially connected with the heat exchange system (10), an active gas tank (13) which is connected with the top of each cavity (1) and a cooling water purification system (14) which is connected with the water cooling system (8);
the premixing device (4), the gas distribution system (5) and the hot wire heating system (6) are all arranged above the base plates (3), the mechanical transmission system (7) and the lifting platform (9) are all arranged below each base plate (3), and the water cooling system (8) is connected with each cavity (1);
the hot wire heating system (6) comprises a hot wire support (61), a hot wire body (62) fixed on the hot wire support (61) and electrodes (63) arranged at two ends of the hot wire body (62) and connected with the hot wire body (62);
the number of the vacuum pump (11), the tail gas purification system (12) and the active gas tank (13) is 1.
2.A multi-chamber chemical vapor deposition apparatus according to claim 1, wherein: the cavity (1) is a double-layer cavity, and the water cooling system (8) is arranged in the double-layer cavity.
3. A multi-chamber chemical vapor deposition apparatus according to claim 1, wherein: the partition board (2) is a fixed partition board, a window capable of being opened and closed is arranged on the partition board (2), and the base plate (3) can penetrate through the window.
4. A multi-chamber chemical vapor deposition apparatus according to claim 1, wherein: the partition board (2) is a liftable partition board.
5. A multi-chamber chemical vapor deposition apparatus according to claim 1, wherein: the electrode (63) is a molybdenum electrode.
6. A multi-chamber chemical vapor deposition apparatus according to claim 1, wherein: the mechanical transmission system (7) comprises an object stage (71), a track (72), a transmission device (73) and a control system (74), wherein the object stage (71) and the track (72) are sequentially arranged at the bottom of the substrate (3), the transmission device (73) is connected with the track (72), and the control system (74) is connected with the transmission device (73).
7. A multi-chamber chemical vapor deposition apparatus according to claim 6, wherein: the transmission (73) comprises any one of the following: the device comprises a screw rod transmission device, a chain transmission device, a transmission roller and a mechanical arm.
8. A multi-chamber chemical vapor deposition apparatus according to claim 7, wherein: the transmission device (73) is a screw rod transmission device.
9. A multi-chamber chemical vapor deposition apparatus according to claim 1, wherein: the lifting platform (9) comprises a bearing platform (91) arranged at the bottom of the mechanical transmission system (7), a lifting support (92) and a base (93) which are sequentially arranged at the bottom of the bearing platform (91), and an electric control system (94) connected with the lifting support (92).
10. A multi-chamber chemical vapor deposition apparatus according to claim 1, wherein: the novel endoscope is characterized by further comprising an endoscope system (15) arranged in the middle and at the lower part of the cavity (1), wherein the lower part of the endoscope system (15) is parallel to the mechanical transmission system (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123150804.4U CN217230927U (en) | 2021-12-15 | 2021-12-15 | Multi-cavity chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123150804.4U CN217230927U (en) | 2021-12-15 | 2021-12-15 | Multi-cavity chemical vapor deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217230927U true CN217230927U (en) | 2022-08-19 |
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ID=82825343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202123150804.4U Expired - Fee Related CN217230927U (en) | 2021-12-15 | 2021-12-15 | Multi-cavity chemical vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217230927U (en) |
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2021
- 2021-12-15 CN CN202123150804.4U patent/CN217230927U/en not_active Expired - Fee Related
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