CN114373685A - Active metal brazing ceramic substrate and manufacturing method thereof - Google Patents
Active metal brazing ceramic substrate and manufacturing method thereof Download PDFInfo
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- CN114373685A CN114373685A CN202210015854.1A CN202210015854A CN114373685A CN 114373685 A CN114373685 A CN 114373685A CN 202210015854 A CN202210015854 A CN 202210015854A CN 114373685 A CN114373685 A CN 114373685A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 143
- 239000002184 metal Substances 0.000 title claims abstract description 143
- 239000000919 ceramic Substances 0.000 title claims abstract description 70
- 239000000758 substrate Substances 0.000 title claims abstract description 49
- 238000005219 brazing Methods 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 39
- 229910000679 solder Inorganic materials 0.000 claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 26
- 238000001035 drying Methods 0.000 claims abstract description 9
- 238000007639 printing Methods 0.000 claims abstract description 8
- 238000004381 surface treatment Methods 0.000 claims abstract description 7
- 238000000429 assembly Methods 0.000 claims abstract description 5
- 230000000712 assembly Effects 0.000 claims abstract description 5
- 239000010949 copper Substances 0.000 claims description 46
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 45
- 229910052802 copper Inorganic materials 0.000 claims description 45
- 238000003486 chemical etching Methods 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- 238000003754 machining Methods 0.000 claims description 7
- 238000003698 laser cutting Methods 0.000 claims description 6
- 238000010329 laser etching Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims 1
- 238000003912 environmental pollution Methods 0.000 abstract description 4
- 238000001465 metallisation Methods 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 238000005245 sintering Methods 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000004321 preservation Methods 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000016507 interphase Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Products (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
The invention discloses an active metal brazing ceramic substrate and a manufacturing method thereof, and belongs to the field of ceramic metallization treatment. The method comprises the following steps: processing a circuit pattern on the metal sheet in an incomplete etching mode; then printing the active metal solder on the circuit pattern and drying; then, carrying out surface treatment on the metal sheet; then the cleaned ceramic plate is arranged in a fixing groove of the metal sheet, and the metal sheet is folded in half to obtain an assembly part; then, the N pieces of assemblies are stacked together and sintered, so that the metal sheet and the ceramic sheet are sintered together; wherein N is more than or equal to 1; and then removing residual metal of the assembly to form the active metal brazing ceramic substrate. Aiming at the problems that the manufacturing process of the AMB substrate in the prior art is easy to cause chemical pollution and is difficult to etch, the manufacturing process of the invention omits the use of etching solution and active metal solder, thereby not only avoiding the problem of environmental pollution, but also greatly reducing the production cost.
Description
Technical Field
The invention belongs to the technical field of ceramic metallization treatment, and particularly relates to an active metal brazing ceramic substrate and a manufacturing method thereof.
Background
The active metal brazing process is one method of setting active metal powder and metal solder capable of forming alloy at certain temperature between ceramic substrate and metal copper and heating and melting in vacuum or inert atmosphere to realize the sealing between metal copper and ceramic substrate. The copper-clad ceramic substrate prepared by the process has the characteristics of high bonding strength of a metalized layer, good air tightness, excellent electric conduction and heat conduction performance and the like, and is widely applied to the field of high-power modules.
The current method for manufacturing the active metal brazing ceramic substrate (AMB substrate) generally comprises the following steps: the method comprises the steps of printing an active metal solder on a ceramic substrate, overlapping copper and ceramic, sintering, transferring a pattern to a metallization layer in the modes of film pasting, exposure, development and the like, and finally etching the pattern through three-stage chemical etching.
The manufacturing method of the active metal brazing ceramic substrate in the prior art has the technical defects that: 1. the AMB substrate adopts a three-stage chemical etching method, a large amount of chemical liquid is used to bring environmental pressure, and the cost is high due to the special etching liquid; 2. the copper thickness exceeds 500 micrometers, the line width and the line distance reach more than 700 micrometers, and the circuit pattern is difficult to refine; 3. the reactive metal chemically reacts with the ceramic material to form an interphase such as titanium nitride (TiN) having semiconductor properties that degrade the electrical properties of the AMB substrate.
Disclosure of Invention
1. Problems to be solved
Aiming at the problems that the manufacturing process of the active metal brazing ceramic substrate in the prior art is easy to cause chemical pollution and difficult to etch, the invention provides the active metal brazing ceramic substrate and the manufacturing method thereof, which can improve the precision of a circuit pattern and the lower limit of the line width and the line distance and can ensure the electrical performance of an AMB substrate; the manufacturing process of the invention omits the use of etching solution and active metal solder, thereby not only avoiding the problem of environmental pollution, but also greatly reducing the production cost.
2. Technical scheme
In order to solve the problems, the technical scheme adopted by the invention is as follows:
the invention discloses a method for manufacturing an active metal brazing ceramic substrate, which comprises the following steps: processing a circuit pattern on the metal sheet in an incomplete etching mode; then, printing the whole active metal solder on the circuit pattern of the metal sheet and drying; then carrying out surface treatment on the metal sheet printed with the active metal solder; then the cleaned ceramic plate is arranged in a fixing groove of the metal sheet, and the metal sheet is folded by taking the ceramic plate as the center to obtain an assembly part; then, the N pieces of assemblies are stacked together and sintered, so that the metal sheet and the ceramic sheet are sintered together; wherein N is more than or equal to 1; and then removing residual metal of the assembly to form the active metal brazing ceramic substrate.
Furthermore, the processed circuit pattern comprises a positive pattern surface area, a negative pattern surface area, a fixing groove and a positioning hole.
Further, the line pattern size λ processed in the way of incomplete etching0The line pattern size lambda of the active metal brazing ceramic substrate obtained finally1Conversion by a scaling factor, λ ═ λ1/λ0(ii) a Wherein the scaling factor is 1-1.5.
Further, the wiring pattern is processed by laser etching, mechanical processing or chemical etching.
Further, the residual metal formed by processing the wiring pattern in an incomplete etching manner is located at a lower portion, a middle portion or an upper portion of the metal sheet.
Further, the residual metal is removed through the positioning holes by laser cutting or chemical etching or machining.
Further, the active metal brazing ceramic substrate is cut into small unit products through the positioning holes and by using a laser.
Furthermore, the specific process of surface treatment of the metal sheet is as follows: and carrying out high-temperature treatment on the metal sheet to enable the active metal solder and the metal sheet to form prealloy.
Furthermore, the metal sheet is made of copper, aluminum or nickel.
The active metal brazing ceramic substrate is manufactured by the manufacturing method of the active metal brazing ceramic substrate.
3. Advantageous effects
Compared with the prior art, the invention has the beneficial effects that:
according to the manufacturing method of the active metal brazing ceramic substrate, the line pattern with the line width and the line distance smaller than 300 mu m can be quickly etched in a mode of combining laser etching and machining; in addition, compared with the manufacturing process in the prior art, the method of the invention omits the processes of film pasting, exposure, development, etching and the like, thereby simplifying the process and greatly saving the production cost; in addition, the method of the invention saves a large amount of chemical etching liquid and active metal solder, avoids the problem of environmental pollution and avoids the problem of the electrical property reduction of the active metal brazing ceramic substrate.
Drawings
FIG. 1 is a schematic flow diagram of the process of the present invention;
FIG. 2 is a schematic diagram of a circuit diagram according to the present invention;
FIG. 3 is a schematic view of the location of the residual metal of the present invention;
FIG. 4 is a schematic structural view of an assembly of the present invention;
FIG. 5 is a schematic flow chart of the method of example 1;
FIG. 6 is a schematic flow chart of the method of example 2;
FIG. 7 is a schematic flow chart of the method of example 3.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments; moreover, the embodiments are not relatively independent, and can be combined with each other according to needs, so that a better effect is achieved. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
For a further understanding of the invention, reference should be made to the following detailed description taken in conjunction with the accompanying drawings and examples.
Referring to fig. 1, the method for manufacturing an active metal brazing ceramic substrate of the present invention includes the following steps:
(1) processing a circuit pattern on the metal sheet in an incomplete etching mode; the metal sheet of the present invention includes, but is not limited to, copper (Cu), aluminum (Al), nickel (Ni). Specifically, the circuit pattern to be processed is directly processed on the metal sheet in an incomplete etching mode through one or a combination mode of laser etching, mechanical processing or chemical etching; namely, the processing depth of the circuit pattern is smaller than the thickness of the metal sheet. It should be noted that, the invention adopts the combination of laser etching and chemical etching to rapidly etch the line pattern with the line width and the line spacing smaller than 300 μm, and the side etching phenomenon is extremely tiny, thereby greatly improving the accuracy of the line pattern and the lower limit of the line width and the line spacing.
Further, the circuit pattern processed in this step includes a pattern surface area, a fixing groove, and a positioning hole, and as shown in fig. 2, the pattern surface area includes a positive pattern surface area and a negative pattern surface area of the metal layer. The fixing groove processed in the invention only needs to satisfy the positioning function of the ceramic plate, and the shape and style are not limited to the groove. In addition, in this step, the circuit pattern is etched by incomplete etching, and the generated residual metal is located at the lower part, the middle part or the upper part of the metal sheet, as shown in fig. 3, the residual metal in fig. 3(a) is located at the lower part of the metal sheet, and the residual metal in fig. 3(b) is located at the middle part of the metal sheet.
(2) Printing the active metal solder on the circuit pattern of the metal sheet and drying; specifically, an active metal solder is integrally printed on an etched circuit pattern by screen printing, and then is subjected to a drying process, wherein the drying temperature is 250 ℃ to 450 ℃.
(3) Carrying out surface treatment on the metal sheet printed with the active metal solder; specifically, the specific process of performing surface treatment on the metal sheet is as follows: and carrying out high-temperature treatment on the metal sheet. By performing high-temperature treatment on the metal sheet printed with the active metal solder, organic matters in the active metal solder can be volatilized or cracked at high temperature so as to be discharged. The active metal solder and the metal sheet form a certain binding force, so that the active metal solder can be prevented from falling off from the metal sheet in the subsequent sintering process; furthermore, the metal layer can be annealed and softened, so that the metal sheet can be conveniently folded in half in the subsequent steps.
(4) The cleaned ceramic plate is installed in a fixing groove of a metal plate, the metal plate is folded in half with the ceramic plate as a center to obtain an assembly part, and it should be noted that one surface of the metal plate printed with an active metal solder is contacted with two surfaces of the ceramic plate, so that a sandwich structure of metal plate-ceramic plate-metal plate is formed, as shown in fig. 4. In addition, the ceramic sheet of the present invention includes, but is not limited to, alumina, zirconia-reinforced alumina, aluminum nitride, silicon carbide, quartz glass, and the like.
(5) The N pieces of assemblies are stacked together and sintered, so that the metal sheet and the ceramic sheet are sintered together; wherein N is more than or equal to 1; namely, a plurality of assembly parts are stacked together to be sintered, thereby realizing mass production. In the invention, the N pieces of assemblies are stacked together and placed in a vacuum sintering furnace for sintering, and the vacuum degree in the vacuum sintering furnace is 10-1Pa～10-4Pa, the temperature is 760-1000 ℃, and the heat preservation time is 10-60 min.
(6) And (3) removing residual metal of the assembly to form the active metal brazing ceramic substrate, wherein the residual metal is the residual metal of the processing circuit pattern in the step (1). The invention is positioned by the positioning hole and removes the residual metal by laser cutting or chemical etching or mechanical processing. It should be noted that if the residual metal is located in the middle of the metal sheet, the organic etching-resistant paste is printed on the upper circuit pattern surface by the screen printer, and then the residual copper is etched away by the conventional chemical etching method, so as to achieve complete etching.
(7) And positioning through the positioning holes, and cutting the active metal brazing ceramic substrate into small unit products by utilizing laser.
In the present invention, the dimension of the circuit pattern processed by the incomplete etching and the dimension of the circuit pattern of the active metal brazing ceramic substrate to be finally obtained are converted by a scaling factor of 1 to 1.5. It should be noted here that the scaling factor refers to the dimension λ of the circuit pattern of the finally obtained active metal brazing ceramic substrate1And the dimension lambda of the circuit pattern processed in the way of incomplete etching0Ratio between, scaling factor λ ═ λ1/λ0(ii) a Since a metal sheet such as copper expands in a high temperature environment, thereby causing a line pattern to become large in size, a more accurate line pattern can be produced by determining the scaling factor.
Compared with the manufacturing process in the prior art, the manufacturing method of the active metal brazing ceramic substrate saves the processes of film pasting, exposure, development, etching and the like, thereby simplifying the process and greatly saving the production cost; in addition, the method of the invention saves a large amount of chemical etching liquid, avoids the problem of environmental pollution and avoids the problem of the electrical property reduction of the active metal brazing ceramic substrate. In addition, the manufacturing method of the invention can save the active metal brazing solder, thereby saving the cost of consumables. Furthermore, the active metal brazing ceramic substrate of the invention is manufactured by the manufacturing method of the active metal brazing ceramic substrate.
Example 1
Referring to fig. 5, the method for manufacturing an active metal brazing ceramic substrate is adopted in this embodiment, specifically, the method for manufacturing AlN-AMB in this embodiment includes the following steps:
(1) a designed circuit pattern is processed on a copper sheet with the specification of 134mm 374mm 0.50mm in an incomplete etching mode through a laser processing and machining combined method. Wherein, the line distance of the line pattern is 300 μm, and the processing depth is 0.3 mm;
(2) printing active metal solder on the circuit pattern of the copper sheet by a screen printer, and placing the copper sheet at the temperature of 250 ℃ for 20min for drying and softening; then placing the copper sheet at the temperature of 450 ℃ for 30min to pre-alloy the copper sheet, so that the active metal solder and the copper sheet have certain binding force;
(3) placing the cleaned AlN ceramic plate with the specification of 138mm 190mm 0.635mm in a fixing groove of a copper sheet, folding the copper sheet in half to enable one surface printed with active metal solder to be in contact with the aluminum nitride ceramic plate, then placing the aluminum nitride ceramic plate in a vacuum sintering furnace for sintering, wherein the vacuum degree is 10-3Pa, 870 ℃ and 20min of heat preservation time;
(4) positioning through a positioning hole, and removing residual copper in a machining mode;
(5) and positioning through the positioning holes, and cutting the active metal brazing ceramic substrate (AMB) into small unit products by using a laser cutting machine.
Example 2
Referring to fig. 6, the present embodiment adopts the above-mentioned method for manufacturing an active metal brazing ceramic substrate, and is specifically used for manufacturing Si3N4-AMB, the specific steps are as follows:
(1) and processing the designed circuit pattern on the two sides of the copper surface by adopting a double-sided chemical etching method to obtain a copper sheet with the specification of 224mm 110mm 0.80mm in an incomplete etching mode. The line distance of the circuit patterns is 400 mu m, the residual copper is positioned in the middle of the copper sheet, and the etching depth of the circuit patterns on both sides of the copper sheet is 0.30 mm;
(2) printing active metal solder on the circuit pattern of the copper sheet by a screen printer, and placing the copper sheet at the temperature of 270 ℃ for 25min for drying and softening; then placing the copper sheet at the temperature of 650 ℃ for 30min to pre-alloy the copper sheet, so that the active metal solder and the copper sheet have certain binding force;
(3) cleaning the cleaned Si with the specification of 114mm x 0.32mm3N4Placing the ceramic sheet in the fixing groove of the copper sheet, folding the copper sheet in half to make the surface printed with the active metal solder contact with the silicon nitride ceramic sheet, and sintering in a vacuum sintering furnace with a vacuum degree of 10-3Pa, the temperature is 880 ℃, and the heat preservation time is 25 min;
(4) the etch stop is printed on the upper circuit pattern side by a screen printer and the remaining copper is etched away in a conventional chemical etching manner to achieve complete etching.
(5) Positioning through a positioning hole, and removing residual copper in a machining mode;
(6) the active metal brazing ceramic substrate (AMB) is positioned through the positioning holes and then cut into small unit products by a laser cutting machine.
Example 3
Referring to fig. 7, the method for manufacturing an active metal brazing ceramic substrate according to the present embodiment is specifically used for manufacturing a ZTA-AMB, and includes the following steps:
(1) machining a copper sheet with the specification of 132mm 374mm 0.40mm to machine the designed circuit pattern on the copper surface in an incomplete etching mode. The line distance and the line width of the circuit pattern are both 300 mu m, the residual copper is positioned at the lower part of the copper sheet, and the etching depth of the circuit pattern of the copper sheet is 0.25 mm;
(2) printing active metal solder on the circuit pattern of the copper sheet by a screen printer, and placing the copper sheet at the temperature of 250 ℃ for 20min for drying and softening; then placing the copper sheet at the temperature of 650 ℃ for 30min to pre-alloy the copper sheet, so that the active metal solder and the copper sheet have certain binding force;
(3) placing cleaned ZTA ceramic sheet with specification of 138mm 190mm 0.32mm in a fixing groove of a copper sheet, folding the copper sheet in half to make one surface printed with active metal solder contact with the ZTA ceramic sheet, and then placing the ZTA ceramic sheet in a vacuum sintering furnace for sintering, wherein the vacuum degree is 10-3Pa, the temperature is 840 ℃, and the heat preservation time is 20 min;
(4) positioning through the positioning hole, and removing residual copper in a conventional chemical etching mode;
(5) the active metal brazing ceramic substrate (AMB) is positioned through the positioning holes and then cut into small unit products by a laser cutting machine.
The invention has been described in detail hereinabove with reference to specific exemplary embodiments thereof. It will, however, be understood that various modifications and changes may be made without departing from the scope of the invention as defined in the appended claims. The detailed description and drawings are to be regarded as illustrative rather than restrictive, and any such modifications and variations are intended to be included within the scope of the present invention as described herein. Furthermore, the background is intended to be illustrative of the state of the art as developed and the meaning of the present technology and is not intended to limit the scope of the invention or the application and field of application of the invention.
Claims (10)
1. The manufacturing method of the active metal brazing ceramic substrate is characterized by comprising the following steps of:
processing a circuit pattern on the metal sheet in an incomplete etching mode;
printing the active metal solder on the circuit pattern of the metal sheet and drying;
carrying out surface treatment on the metal sheet printed with the active metal solder;
the cleaned ceramic plate is arranged in a fixing groove of the metal sheet, and the metal sheet is folded by taking the ceramic plate as a center to obtain an assembly part;
the N pieces of assemblies are stacked together and sintered, so that the metal sheet and the ceramic sheet are sintered together; wherein N is more than or equal to 1;
and removing residual metal of the assembly to form the active metal brazing ceramic substrate.
2. The method of claim 1, wherein the processed circuit pattern includes a positive pattern surface area, a negative pattern surface area, a fixing groove and a positioning hole.
3. The method of claim 1, wherein the pattern dimension λ is processed by incomplete etching0The line pattern size lambda of the active metal brazing ceramic substrate obtained finally1Conversion by a scaling factor, λ ═ λ1/λ0(ii) a Wherein the scaling factor is 1-1.5.
4. The method of claim 1, wherein the pattern is formed by laser etching, mechanical processing or chemical etching.
5. The method of claim 1, wherein the residual metal formed by patterning the circuit in an under-etched manner is located at a lower portion, a middle portion or an upper portion of the metal sheet.
6. The method of claim 2, wherein the residual metal is removed through the pilot hole by laser cutting or chemical etching or machining.
7. The method of claim 2, wherein the active metal brazing ceramic substrate is cut into small unit products by laser through the pilot hole.
8. The method for manufacturing the active metal brazing ceramic substrate according to any one of claims 1 to 7, wherein the specific process of performing surface treatment on the metal sheet is as follows: and carrying out high-temperature treatment on the metal sheet to enable the active metal solder and the metal sheet to form prealloy.
9. The method of manufacturing an active metal brazing ceramic substrate according to any one of claims 1 to 7, wherein the metal sheet is made of copper, aluminum or nickel.
10. An active metal brazing ceramic substrate manufactured by the method for manufacturing an active metal brazing ceramic substrate according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210015854.1A CN114373685A (en) | 2022-01-07 | 2022-01-07 | Active metal brazing ceramic substrate and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210015854.1A CN114373685A (en) | 2022-01-07 | 2022-01-07 | Active metal brazing ceramic substrate and manufacturing method thereof |
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| CN114373685A true CN114373685A (en) | 2022-04-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117460174A (en) * | 2023-12-25 | 2024-01-26 | 广州先艺电子科技有限公司 | Preparation method of patterned AMB ceramic copper-clad plate |
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2022
- 2022-01-07 CN CN202210015854.1A patent/CN114373685A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117460174A (en) * | 2023-12-25 | 2024-01-26 | 广州先艺电子科技有限公司 | Preparation method of patterned AMB ceramic copper-clad plate |
| CN117460174B (en) * | 2023-12-25 | 2024-04-02 | 广州先艺电子科技有限公司 | Preparation method of patterned AMB ceramic copper-clad plate |
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