CN114380614A - High-etching-precision ceramic metal-clad plate, preparation method and chip packaging module - Google Patents
High-etching-precision ceramic metal-clad plate, preparation method and chip packaging module Download PDFInfo
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- CN114380614A CN114380614A CN202210051527.1A CN202210051527A CN114380614A CN 114380614 A CN114380614 A CN 114380614A CN 202210051527 A CN202210051527 A CN 202210051527A CN 114380614 A CN114380614 A CN 114380614A
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
Abstract
The invention discloses a high-etching-precision ceramic-coated metal plate, a preparation method and a chip packaging module. The high-etching-precision ceramic-coated metal plate comprises a ceramic layer (a1), a metal layer (b1) and an active metal bonding layer (t1), wherein the active metal bonding layer (t1) is located on the lower surface of a metal circuit layer (b2) which is left after the metal layer (b1) is etched. By printing the active metal adhesive layer on the lower surface of the metal circuit layer (b2) which is not etched, the situation that the active metal does not exist at the etched position is ensured, and the problem that the active metal cannot be etched is solved. In addition, the ceramic layer is provided with the groove, the active metal bonding layer is arranged in the groove, and the ratio of the thickness of the active metal bonding layer (t1) to the depth of the groove (a2) is 1.02-1.15, so that the welding strength can be improved, and the problem of unevenness of a welded metal layer can be solved.
Description
Technical Field
The invention relates to the technical field of metal-clad plates, in particular to a high-etching-precision ceramic metal-clad plate, a preparation method and a chip packaging module.
Background
With the rise of the packaging of power electronic devices such as IGBTs, metal-clad plates used for packaging the power electronic devices have been raised. The ceramic-coated metal is composed of a ceramic substrate, a bonding adhesive layer and a conductive layer, and means that a metal foil is directly bonded at a high temperature or welded on a ceramic substrate such as alumina by means of active metal brazing. The prepared ultrathin composite substrate has high heat conduction property, high adhesion strength, excellent soft weldability and excellent electrical insulation performance, and is a basic material of the interconnection technology and the structural technology of high-power electronic circuits such as IGBT and the like.
Because the bonding layer adopts active metals such as titanium, silver, cake, gold and the like, the existing etching process is difficult to etch the active metals completely, the active metals such as titanium, silver, cake, gold and the like remain, the risk of line coupling and open circuit is caused, the line width and line distance are inaccurate, the problems of uneven line resistance and short circuit or open circuit of the line exist, and the high-precision power packaging module is difficult to prepare.
Therefore, a technical scheme is needed to solve the technical problem that the existing etching process cannot etch the active metal completely, so that the high-precision power packaging module is difficult to prepare.
Disclosure of Invention
In view of the above, the main object of the present invention is to provide a high etching precision ceramic-coated metal plate, which includes a ceramic layer (a1), a metal layer (b1) and an active metal adhesion layer (t1), wherein the active metal adhesion layer (t1) is located on the lower surface of the metal wiring layer (b2) remaining after the metal layer (b1) is etched.
Preferably, the line width of the active metal adhesive layer (t1) is smaller than that of the metal wiring layer (b 2).
Preferably, the line width of the active metal adhesive layer (t 1)/the line width of the metal circuit layer (b2) is 0.85. ltoreq.0.98.
Preferably, the ceramic layer (a1) is provided with a groove (a2) on the surface close to the metal layer (b1), and the active metal bonding layer (t1) is arranged in the groove (a 2); the thickness of the active metal bonding layer (t 1)/the depth of the groove (a2) is less than or equal to 1.02 and less than or equal to 1.15.
Preferably, the metal layer (b1) is a copper layer or an aluminum layer, and the ceramic layer (a1) is one of an aluminum oxide layer, an aluminum nitride layer and a silicon nitride layer; the active metal bonding layer (t1) is one of Ti-Ag, Ti-Ag-Cu-Zn and Au-Ag-Ge.
Preferably, the depth of the 15 μm < recess (a2) is < 48 μm.
The invention also aims to provide a preparation method of the ceramic-coated metal plate with high etching precision, which comprises the following steps:
s1, according to the circuit pattern which needs to be etched and formed by the subsequent metal layer (b1), printing the active metal bonding layer (t1) pattern which has the same pattern as the circuit pattern formed by etching the metal layer (b1) on the ceramic layer (a 1);
and S2, welding the ceramic layer (a1) containing the active metal bonding layer (t1) obtained in the step S1 and the metal layer (b 1).
Preferably, before step S1, step S0 is further included; in the step S0, a groove (a2) is engraved on one side of the ceramic layer (a1) close to the metal layer (b1), and the active metal bonding layer (t1) is placed in the groove (a 2); wherein, the thickness of the active metal bonding layer (t1) is more than or equal to 1.02 and less than or equal to 1.15 per the depth of the groove (a2), and the depth of the groove (a2) is more than or equal to 15 mu m and less than or equal to 48 mu m.
Preferably, the metal layer (b1) is a copper layer or an aluminum layer, and the ceramic layer (a1) is one of an aluminum oxide layer, an aluminum nitride layer and a silicon nitride layer; the active metal bonding layer (t1) is one of Ti-Ag, Ti-Ag-Cu-Zn and Au-Ag-Ge.
The invention also aims to provide a chip packaging module, and the circuit layer of the chip packaging module adopts the high-etching-precision ceramic-coated metal plate.
The invention has the following effective effects: the invention discloses a high-etching-precision ceramic-coated metal plate and a preparation method and application thereof. The high-etching-precision ceramic-coated metal plate comprises a ceramic layer (a1), a metal layer (b1) and an active metal bonding layer (t1), wherein the active metal bonding layer (t1) is located on the lower surface of a metal circuit layer (b2) which is left after the metal layer (b1) is etched. The active metal bonding layer is arranged on the lower surface of the metal circuit layer (b2) which is not etched, and the situation that active metal does not exist at the etched position is guaranteed, so that the problem that the active metal cannot be etched is solved, further, the ceramic layer is provided with the groove, the active metal bonding layer is arranged in the groove, the depth ratio of the thickness of the active metal bonding layer (t 1)/the depth of the groove (a2) is 1.02-1.15, the welding strength of the metal layer and the ceramic layer is improved, the height difference that the active metal bonding layer is covered on the ceramic layer and the active metal bonding layer is not covered on the ceramic layer is guaranteed to be solved, and the welded metal layer is guaranteed to be not smooth.
Drawings
FIG. 1 is a schematic structural view of a high etching precision ceramic-clad metal plate before welding;
FIG. 2 is a schematic structural diagram of the ceramic layer after the groove is etched;
FIG. 3 is a schematic diagram of a structure of a high etching precision ceramic-coated metal plate after etching.
Detailed Description
The present application will be described in further detail with reference to the following drawings and detailed description. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings.
Referring to fig. 1 to 3, fig. 1 is a schematic structural view of a high etching precision ceramic-clad metal plate before welding; FIG. 2 is a schematic structural diagram of the ceramic layer after the groove is etched; FIG. 3 is a schematic diagram of a structure of a high etching precision ceramic-coated metal plate after etching. The embodiment provides a high-etching-precision ceramic-coated metal plate which has a structure that the high-etching-precision ceramic-coated metal plate comprises a ceramic layer (a1), a metal layer (b1) and an active metal bonding layer (t1), wherein the active metal bonding layer (t1) is positioned on the lower surface of a metal circuit layer (b2) left after the metal layer (b1) is etched. The preparation method of the high-etching-precision ceramic-coated metal plate comprises the following steps: s1, according to the circuit pattern which needs to be etched and formed by the subsequent metal layer (b1), printing the active metal bonding layer (t1) pattern which has the same pattern as the circuit pattern formed by etching the metal layer (b1) on the ceramic layer (a 1); and S2, welding the ceramic layer (a1) containing the active metal bonding layer (t1) obtained in the step S1 and the metal layer (b 1). Through the technical scheme, the etching area is free of the active metal bonding layer, so that the technical problem that the active metal is difficult to etch cleanly in the conventional etching technology is solved. The line width of the printed active metal bonding layer (t1) is smaller than that of the metal circuit layer (b2), so that the problem of short circuit caused by the fact that active metal is not required to be etched, etching is clean, and no active metal remains is further solved. In this example, it is preferable that 0.85. ltoreq. the line width of the active metal adhesive layer (t 1)/the line width of the metal wiring layer (b2) is 0.98 or less.
In order to improve the peeling strength of the etched circuit, a groove (a2) is formed in one surface, close to the metal layer (b1), of the ceramic layer (a1), wherein the groove is formed through the processes of die pressing or laser etching, CNC cutting and the like in the prior art, and the active metal bonding layer (t1) is placed in the groove (a2) through a screen printing process; also in this example, the thickness of the active metal bonding layer (t1) is preferably greater than the depth of the groove (a2), more preferably 1.02. ltoreq. the thickness of the active metal bonding layer (t 1)/the depth of the groove (a2) is 1.15, and also preferably 15 μm. ltoreq. the depth of the groove (a2) is 48 μm.
In the present embodiment, the metal layer (b1) may be an aluminum layer in addition to the copper layer, and in the present embodiment, the ceramic layer (a1) may be one of an aluminum nitride layer and a silicon nitride layer in addition to the aluminum oxide layer, and is selected according to the heat dissipation requirement; the active metal bonding layer (t1) is preferably one of Ti-Ag, Ti-Ag-Cu-Zn, and Au-Ag-Ge according to the actual welding requirements.
The specific embodiment is as follows:
example 1
The alumina ceramics with the thickness of 50 multiplied by 0.63mm is dried for 20 to 24 hours under the vacuum environment at the temperature of 105 ℃ after being washed by dilute hydrochloric acid and alcohol for standby. And (3) washing the 50 multiplied by 0.63mm copper foil with dilute hydrochloric acid and alcohol, and drying the copper foil for 20-24 hours at 105 ℃ in a vacuum environment for later use. Printing an Ag71Cu26Ti3 solder layer with the shape and the size consistent with those of a subsequent copper foil circuit on the alumina ceramic through a screen printing process, wherein the printing thickness is 15um, and then drying for 2-6 h at 105 ℃ for later use. After the printed ceramic plate is attached to the copper foil, a weight of 100g is pressed on the surface of the printed ceramic plate, the temperature is raised to 825 ℃ in a vacuum furnace at 5 ℃, and then the ceramic plate is cooled along with the furnace for 10min to obtain the ceramic copper-clad plate.
A conducting layer and a ceramic layer are pasted on two sides of a 3M adhesive tape, tension testing is carried out, the line peeling strength is 10.2N/mm, the ceramic copper-clad plate is etched after being exposed through a mask by adopting a traditional etching process to obtain a circuit board with the line width of 2mm and the line distance of 0.5mm, and no metal points or metal lines and the like are left.
Comparative example 1
The whole surface of the alumina ceramic is printed with a solder layer of Ag71Cu26Ti3, the printing thickness is 15um, and other processes are the same as those in the embodiment 1.
The conductive layer and the ceramic layer are pasted on the two sides of the 3M adhesive tape, tension testing is carried out, the line peeling strength is 13.3N/mm, the ceramic copper-clad plate is subjected to a traditional etching process, a circuit board with the line width of 2mm and the line distance of 0.5mm is obtained by etching after mask exposure, metal points and the like are obviously remained between lines, the adhesion outage risk is easily caused, and the breakdown field intensity is also obviously reduced.
Example 2
The method comprises the steps of processing 50 x 0.63mm aluminum oxide ceramics into grooves with the width of 1.7mm and the depth of 15 mu m on the surface by adopting a high-speed CNC cutting process, washing with dilute hydrochloric acid and cleaning with alcohol, and drying at 105 ℃ for 20-24 hours in a vacuum environment for later use. And (3) washing the 50 multiplied by 0.63mm copper foil with dilute hydrochloric acid and alcohol, and drying the copper foil for 20-24 hours at 105 ℃ in a vacuum environment for later use. Printing a solder layer of Ag71Cu26Ti3 with the width of 1.7mm and the thickness of 17um in the groove of the alumina ceramic by a screen printing process, and drying at 105 ℃ for 2-6 h for later use. After the printed ceramic plate is attached to the copper foil, a weight of 100g is pressed on the surface of the printed ceramic plate, the temperature is raised to 825 ℃ in a vacuum furnace at 5 ℃, and then the ceramic plate is cooled along with the furnace for 10min to obtain the ceramic copper-clad plate.
A conducting layer and a ceramic layer are pasted on two sides of a 3M adhesive tape, tension testing is carried out, the line peeling strength is 13.7N/mm, the ceramic copper-clad plate is etched after being exposed through a mask by adopting a traditional etching process to obtain a circuit board with the line width of 2mm and the line distance of 0.5mm, and no metal points or metal lines and the like are left.
Example 3
The method comprises the steps of processing 50 x 0.63mm alumina ceramics into grooves with the width of 1.95mm and the depth of 48 mu m on the surface by adopting a high-speed CNC cutting process, washing with dilute hydrochloric acid and cleaning with alcohol, and drying at 105 ℃ for 20-24 hours in a vacuum environment for later use. And (3) washing the 50 multiplied by 0.63mm copper foil with dilute hydrochloric acid and alcohol, and drying the copper foil for 20-24 hours at 105 ℃ in a vacuum environment for later use. Printing a solder layer of Ag71Cu26Ti3 with the width of 1.95mm and the thickness of 49um in the groove of the alumina ceramic by a screen printing process, and drying at 105 ℃ for 2-6 h for later use. After the printed ceramic plate is attached to the copper foil, a weight of 100g is pressed on the surface of the printed ceramic plate, the temperature is raised to 825 ℃ in a vacuum furnace at 5 ℃, and then the ceramic plate is cooled along with the furnace for 10min to obtain the ceramic copper-clad plate.
A conducting layer and a ceramic layer are pasted on two sides of a 3M adhesive tape, tension testing is carried out, the line peeling strength is 14.5N/mm, the ceramic copper-clad plate is etched after being exposed through a mask by adopting a traditional etching process to obtain a circuit board with the line width of 2mm and the line distance of 0.5mm, and no metal points or metal lines and the like are left.
Example 4
The method comprises the steps of processing 50 x 0.63mm aluminum oxide ceramics into grooves with the width of 1.95mm and the depth of 30 mu m on the surface by adopting a high-speed CNC cutting process, washing with dilute hydrochloric acid and cleaning with alcohol, and drying at 105 ℃ for 20-24 hours in a vacuum environment for later use. And (3) washing the 50 multiplied by 0.63mm copper foil with dilute hydrochloric acid and alcohol, and drying the copper foil for 20-24 hours at 105 ℃ in a vacuum environment for later use. Printing a solder layer of Ag71Cu26Ti3 with the width of 1.95mm and the thickness of 32um in the groove of the alumina ceramic by a screen printing process, and drying at 105 ℃ for 2-6 h for later use. After the printed ceramic plate is attached to the copper foil, a weight of 100g is pressed on the surface of the printed ceramic plate, the temperature is raised to 825 ℃ in a vacuum furnace at 5 ℃, and then the ceramic plate is cooled along with the furnace for 10min to obtain the ceramic copper-clad plate.
A conducting layer and a ceramic layer are pasted on two sides of a 3M adhesive tape, tension testing is carried out, the line peeling strength is 15.2N/mm, the ceramic copper-clad plate is etched after being exposed through a mask by adopting a traditional etching process to obtain a circuit board with the line width of 2mm and the line distance of 0.5mm, and no metal points or metal lines and the like are left.
Example 5
Silicon nitride ceramics with the thickness of 50 multiplied by 0.63mm are processed with grooves with the width of 1.95mm and the depth of 30 mu m on the surface by adopting a high-speed CNC cutting process, and then are dried for 20-24 hours at the temperature of 105 ℃ in a vacuum environment after being washed by dilute hydrochloric acid and alcohol for standby. And (2) polishing a 50 multiplied by 0.63mm aluminum foil by 2000-mesh abrasive paper, cleaning the aluminum foil by alcohol and clear water, and drying the aluminum foil for 20-24 hours at 105 ℃ in a vacuum environment for later use. And printing an Au-25.5Ag-25.2Ge solder layer with the width of 1.95mm and the thickness of 32um in the groove by a silk-screen printing process on the silicon oxide ceramic, and drying at 105 ℃ for 2-6 h for later use. Pressing a weight of 100g on the surface of the printed ceramic plate and the copper foil after the printed ceramic plate and the copper foil are jointed, heating the ceramic plate and the copper foil to 515 ℃ in a vacuum furnace, and then keeping the temperature for 10min to obtain the ceramic aluminum-clad plate along with the furnace cooling.
A conducting layer and a ceramic layer are pasted on two sides of a 3M adhesive tape, tension testing is carried out, the line peeling strength is 16.6N/mm, the ceramic copper-clad plate is etched after being exposed through a mask by adopting a traditional etching process to obtain a circuit board with the line width of 2mm and the line distance of 0.5mm, and no metal points or metal lines and the like are left.
The above description is only a preferred embodiment of the application and is illustrative of the principles of the technology employed. It will be appreciated by a person skilled in the art that the scope of the invention as referred to in the present application is not limited to the embodiments with a specific combination of the above-mentioned features, but also covers other embodiments with any combination of the above-mentioned features or their equivalents without departing from the inventive concept. For example, the above features may be replaced with (but not limited to) features having similar functions disclosed in the present application.
Claims (10)
1. High sculpture precision pottery covers metal sheet, its characterized in that: including ceramic layer, metal level and active metal adhesive linkage, its characterized in that: the active metal bonding layer is positioned on the lower surface of the metal circuit layer left after the metal layer is etched.
2. The high etching precision ceramic-coated metal plate according to claim 1, wherein: the line width of the active metal bonding layer is smaller than the line width of the metal circuit layer.
3. The high etching precision ceramic-coated metal plate according to claim 2, wherein: the line width of the active metal bonding layer/the line width of the metal circuit layer is not less than 0.85 and not more than 0.98.
4. The high etching precision ceramic-coated metal plate according to claim 3, wherein: the ceramic layer is provided with a groove on one surface close to the metal layer, and the active metal bonding layer is arranged in the groove; the thickness of the active metal bonding layer/the depth of the groove is more than or equal to 1.02 and less than or equal to 1.15.
5. The high etching precision ceramic-coated metal plate according to any one of claims 1 to 4, wherein: the metal layer is a copper layer or an aluminum layer, and the ceramic layer is one of an aluminum oxide layer, an aluminum nitride layer and a silicon nitride layer; the active metal bonding layer is one of Ti-Ag, Ti-Ag-Cu-Zn and Au-Ag-Ge.
6. The high etching precision ceramic-coated metal plate according to claim 5, wherein: the depth of the groove is less than or equal to 48 mu m and less than or equal to 15 mu m.
7. The preparation method of the high-etching-precision ceramic-coated metal plate is characterized by comprising the following steps of:
s1, printing an active metal bonding layer with a pattern consistent with the circuit pattern formed by etching the metal layer on the ceramic layer;
and S2, welding the ceramic layer containing the active metal bonding layer obtained in the step S1 and the metal layer.
8. The method for preparing a high etching precision ceramic metal-clad plate according to claim 7, wherein: before step S1, step S0 is further included; in the step S0, a groove is engraved on one surface of the ceramic layer close to the metal layer, and the active metal bonding layer is arranged in the groove; wherein the thickness of the active metal bonding layer/the depth of the groove is more than or equal to 1.02 and less than or equal to 1.15, and the depth of the groove is more than or equal to 15 mu m and less than or equal to 48 mu m.
9. The method for preparing a high-etching-precision ceramic-coated metal plate according to claim 8, wherein the method comprises the following steps: the metal layer is a copper layer or an aluminum layer, and the ceramic layer is one of an aluminum oxide layer, an aluminum nitride layer and a silicon nitride layer; the active metal bonding layer is one of Ti-Ag, Ti-Ag-Cu-Zn and Au-Ag-Ge.
10. The chip packaging module is characterized in that the circuit layer is prepared from the high-etching-precision ceramic metal-clad plate as claimed in any one of claims 1 to 6.
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| CN202210051527.1A CN114380614A (en) | 2022-01-17 | 2022-01-17 | High-etching-precision ceramic metal-clad plate, preparation method and chip packaging module |
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| CN202210051527.1A CN114380614A (en) | 2022-01-17 | 2022-01-17 | High-etching-precision ceramic metal-clad plate, preparation method and chip packaging module |
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Cited By (1)
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| CN115028467A (en) * | 2022-06-20 | 2022-09-09 | 昆明冶金研究院有限公司北京分公司 | Low-voidage ceramic copper-clad plate and preparation method thereof |
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