CN114361810B - Broadband low-scattering double-frequency microstrip antenna - Google Patents

Broadband low-scattering double-frequency microstrip antenna Download PDF

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CN114361810B
CN114361810B CN202210096535.8A CN202210096535A CN114361810B CN 114361810 B CN114361810 B CN 114361810B CN 202210096535 A CN202210096535 A CN 202210096535A CN 114361810 B CN114361810 B CN 114361810B
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CN114361810A (en
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姜文
闫星岩
洪涛
席延
葛江诚
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Xidian University
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Abstract

The invention discloses a broadband low-scattering double-frequency microstrip antenna which comprises a square upper dielectric plate, a middle dielectric plate and a lower dielectric plate which are arranged from top to bottom and are not contacted with each other, wherein M multiplied by M wave absorbing structures which are periodically arranged are printed at the central position of the upper surface of the upper dielectric plate, M multiplied by M frequency selection surfaces are printed on the upper surface of the middle dielectric plate, N multiplied by N polarization conversion surfaces and microstrip radiation patches which are arranged in a chessboard manner are printed on the upper surface of the lower dielectric plate, and a metal radiation floor is printed on the lower surface of the lower dielectric plate. The invention realizes remarkable RCS reduction while guaranteeing radiation characteristics by integrating the frequency selective wave absorber and the polarization conversion surface with the microstrip antenna, and solves the technical problems that the RCS reduction in an antenna band cannot be realized and the radiation and scattering performances of the antenna are difficult to be simultaneously considered in the prior art.

Description

Broadband low-scattering double-frequency microstrip antenna
Technical Field
The invention belongs to the technical field of antennas, and relates to a double-frequency microstrip antenna, in particular to a broadband low-scattering double-frequency microstrip antenna based on a frequency selective wave absorber and a polarization conversion surface.
Background
In the field of communication today, a signal transmitting and receiving system is one of the most important components in the whole communication platform, an antenna is a core part in the system, and radiation characteristics are main indexes for measuring the quality of the antenna. The key to improving the scattering properties is how to reduce the radar cross-section, which is the most fundamental parameter in the scattering properties, which refers to a measure of the return power of a target in a given direction under plane wave illumination.
The antenna is used as a special scatterer, and the key point of the antenna system is that the antenna system has the function of normally radiating and receiving electromagnetic waves, and the lower radar cross section characteristic is realized. Therefore, reducing the antenna RCS while ensuring the radiation performance of the antenna has become an urgent problem.
The microstrip antenna is formed by attaching a conductor sheet to a dielectric substrate with a metal grounding plate, and has light weight, small volume, thin section and easy processing compared with the conventional antenna. An array antenna is an antenna in which not less than two antenna elements are arranged and a predetermined radiation characteristic is obtained by appropriate excitation. The array is formed according to different parameters such as antenna feed current, spacing, electric length and the like so as to obtain the required radiation characteristics, and the array has wide application in the directions of beam control, frequency scanning, phase control and the like.
The super surface is a novel two-dimensional artificial electromagnetic material, and the unit structure of the super surface can be carefully designed to achieve the effect of regulating and controlling electromagnetic characteristics such as phase and amplitude of electromagnetic waves, so that a plurality of electromagnetic behaviors which do not exist in nature are realized, and the super surface is widely used for reducing RCS of an antenna due to the flexibility in electromagnetic scattering wave control.
The frequency selective surface achieves RCS reduction by reflecting electromagnetic waves into non-threat angular regions, but may still be detected by enemy military radars; the wave absorber can achieve RCS reduction by converting incident electromagnetic waves into thermal energy, but can reduce the radiation performance of the antenna. In recent years, in order to overcome the above problems, a frequency selective absorber has been proposed, which combines a absorber with a frequency selective surface, and can convert an incident electromagnetic wave into heat energy outside the band to reduce RCS, but in-band RCS reduction cannot be achieved, and at the same time, scattering performance and radiation performance cannot be achieved.
Disclosure of Invention
In order to solve the above-mentioned drawbacks in the prior art, the present invention is directed to providing a wideband low-scattering dual-frequency microstrip antenna, which is used for solving the technical problems that in-band RCS of the antenna cannot be reduced and it is difficult to consider both radiation and scattering performance of the antenna in the prior art.
The invention is realized by the following technical scheme.
The invention provides a broadband low-scattering double-frequency microstrip antenna, which comprises square upper-layer dielectric plates, middle-layer dielectric plates and lower-layer dielectric plates, wherein the square upper-layer dielectric plates, the middle-layer dielectric plates and the lower-layer dielectric plates are arranged from top to bottom and are not contacted with each other;
m multiplied by M wave-absorbing surfaces which are periodically arranged are printed on the upper surface of the upper medium plate, and M is more than or equal to 2; the wave-absorbing surface comprises a square patch etched with rectangular grooves, an toe-intersecting structure and a T-shaped structure;
m multiplied by M frequency selection surfaces which are periodically arranged are printed on the upper surface of the middle dielectric plate, and M is more than or equal to 2; the frequency selection surface comprises two mutually nested metal square ring gaps;
n multiplied by N polarization conversion surfaces which are arranged in a chessboard manner are printed on the upper surface of the lower dielectric plate, and N is more than or equal to 2; the polarization conversion surface is provided with a strip-shaped patch and a pi-shaped structure, and the center of the polarization conversion surface is printed with a microstrip radiation patch; the lower surface of the lower dielectric plate is printed with a metal radiation floor;
the microstrip radiation patch feeds through a metal probe penetrating through the lower dielectric plate; the reduction of the out-of-band RCS of the antenna is achieved by the wave-absorbing surface and the frequency selective surface.
Preferably, the centers of the M×M wave-absorbing surfaces which are periodically arranged are positioned on the center normal line of the upper dielectric plate; the centers of the M multiplied by M frequency selective surfaces which are periodically arranged are positioned on the center normal line of the middle-layer dielectric plate; the N multiplied by N polarization conversion surfaces arranged on the chessboard are arranged around the microstrip radiation patches, and the polarization conversion surfaces and the microstrip radiation patches are integrally distributed on the central normal line of the lower dielectric plate.
Preferably, the wave-absorbing surface is opposite to the frequency-selective surface.
Preferably, rectangular grooves etched on the wave-absorbing surface are symmetrically distributed along the diagonal direction, four sides of the square patch are provided with bent square ring structures, each square ring structure is provided with a symmetrical and outwards extending toe-crossing structure, the outermost layer of the toe-crossing structure is of a T-shaped structure, and resistors are loaded between the toe-crossing structure and the four T-shaped structures.
Preferably, the toe crossing structure is an opposite comb tooth structure.
Preferably, the frequency selection surface is formed by mutually nesting an inner metal square ring gap and an outer metal square ring gap.
Preferably, the microstrip radiating patch is symmetrically etched with a pair of opposite hook-shaped slits.
Preferably, the strip-shaped patches on the polarization conversion surface are distributed along a diagonal line, and two opposite n-shaped structures are respectively arranged at two ends of each strip-shaped patch.
Due to the adoption of the technical scheme, the invention has the following beneficial effects:
the invention combines the frequency selective wave absorber and the polarization conversion surface, the M multiplied by M frequency selective wave absorber is periodically arranged and loaded on the antenna, the basic unit comprises a square patch with rectangular grooves etched in the diagonal direction, a square ring-shaped structure for bending, two toe-crossing structures respectively arranged in the x and y directions, a resistor loaded between the square ring-shaped structure and the toe-crossing structures and four T-shaped structures on the outermost layer, so as to ensure the reduction of the RCS outside the antenna band; the in-band RCS reduction can be achieved by arranging n×n polarization conversion surfaces in a checkerboard fashion around the antenna, the basic unit being composed of a strip-shaped patch arranged along a diagonal line and two pi-shaped structures. Eventually, an RCS reduction of more than 5dB is achieved in the range of 3GHz-15GHz, with an average RCS reduction of 11.08dB. The technical problems that in-band RCS of an antenna cannot be reduced and the radiation and scattering properties of the antenna are difficult to consider in the prior art are solved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate and do not limit the invention, and together with the description serve to explain the principle of the invention:
FIG. 1 is a schematic overall structure of an embodiment of the present invention;
FIG. 2 is a top view of the upper surface of an upper dielectric plate according to an embodiment of the present invention;
FIG. 3 is a top view of the upper surface of a dielectric layer in an embodiment of the present invention;
FIG. 4 is a top view of the upper surface of a lower dielectric plate according to an embodiment of the present invention;
FIG. 5 is a top view of the wave-absorbing structure unit structure on the upper surface of the upper dielectric plate according to the embodiment of the present invention;
FIG. 6 is a top view of a dielectric slab upper surface frequency selective surface unit structure in accordance with an embodiment of the present invention;
FIG. 7 is a top view of a microstrip radiating structure on the upper surface of a lower dielectric plate according to an embodiment of the present invention;
FIG. 8 is a top view of a top surface polarization conversion surface unit structure of a lower dielectric plate according to an embodiment of the present invention;
FIG. 9 is a schematic diagram of the transmission/reflection coefficients of a frequency selective absorber according to an embodiment of the present invention;
FIG. 10 is a graph showing the absorption rate of a frequency selective absorber according to an embodiment of the present invention;
FIG. 11 is a schematic view of the reflectance of a polarization conversion surface according to an embodiment of the present invention;
FIG. 12 is a schematic view of an embodiment of the present invention, |S11|;
FIGS. 13 (a), (b) are E-plane and H-plane radiation patterns at a frequency of 6.8GHz according to embodiments of the present invention;
FIGS. 14 (a), (b) are E-plane and H-plane radiation patterns at a frequency point of 10GHz in accordance with embodiments of the present invention;
FIG. 15 is a schematic diagram showing the cross section comparison of a single-station radar under the normal incidence of electromagnetic waves between an embodiment of the present invention and a reference antenna.
Detailed Description
The present invention will now be described in detail with reference to the drawings and the specific embodiments thereof, wherein the exemplary embodiments and descriptions of the present invention are provided for illustration of the invention and are not intended to be limiting.
Referring to figures 1, 2, 3 and 4, the broadband low-scattering double-frequency microstrip antenna comprises a square upper dielectric plate 1, a middle dielectric plate 2 and a lower dielectric plate 3 which are arranged from top to bottom and are not contacted with each other, wherein M multiplied by M wave absorbing surfaces 4 which are periodically arranged are printed on the upper surface of the upper dielectric plate 1, and M is more than or equal to 2; the upper surface of the middle dielectric plate 2 is printed with m×m frequency selective surfaces 5 which are periodically arranged, and when M is greater than or equal to 2, the frequency selective surfaces 5 can guarantee good wave transmission characteristics theoretically, and in the embodiment of the invention, m=5. The upper surface of the lower dielectric plate 3 is printed with n×n polarization conversion surfaces 6 arranged in a checkerboard, and the polarization conversion surfaces 6 can theoretically ensure good polarization rotation characteristics when N is greater than or equal to 2, and in the embodiment of the invention, n=10. Replacing a 2 x 2 array of polarization conversion surfaces 6 with microstrip radiating patches 7 at a central location; the lower surface of the lower dielectric plate 3 is printed with a metal radiation floor 8; the upper dielectric plate 1 and the middle dielectric plate 2 are supported by a foam layer with the same dielectric constant as air.
The microstrip radiation patch 7 feeds through a metal probe penetrating through the lower dielectric plate 3; the out-of-band RCS reduction of the antenna is achieved by the absorbing surface 4 and the frequency selective surface 5.
Wherein, the centers of M multiplied by M wave-absorbing surfaces 4 which are periodically arranged are positioned on the central normal line of the upper dielectric plate 1; the centers of the M multiplied by M frequency selective surfaces 5 which are arranged periodically are positioned on the center normal line of the middle layer dielectric plate 2; the n×n polarization conversion surfaces 6 arranged in a checkerboard manner are arranged around the microstrip radiation patches 7, and the polarization conversion surfaces and the microstrip radiation patches are integrally distributed on the central normal line of the lower dielectric plate 3. The wave-absorbing surface 4 is vertically opposite to the frequency-selecting surface 5.
In one embodiment, the three dielectric plates have a side length of 80mm and a thickness of 0.25mm, 0.5mm and 1.6mm, respectively, and have relative dielectric constants of 3.45, 2.2 and 4.4, respectively; the wave-absorbing surface 4 theoretically ensures good wave-absorbing properties when M is not less than 2, with the embodiment of the invention where m=5. The supporting thickness of the foam layer between the upper dielectric plate 1 and the middle dielectric plate 2 is 7.5mm, and the supporting thickness of the plastic foam layer between the middle dielectric plate 2 and the lower dielectric plate 3 is 4mm.
Referring to fig. 5, the wave-absorbing surface 4 includes a square patch 41, a square ring-shaped structure 42 bent at four sides of the square patch 41, rectangular grooves 411 formed by opposing and not contacting each other are etched in a diagonal direction of the square patch 41, and the four etched rectangular grooves 411 are symmetrically distributed. Two toe crossing structures 44 are respectively arranged on each square ring structure 42, namely in the x and y directions, and the toe crossing structures are inserted comb tooth structures. A resistor 43 is loaded between each square ring structure 42 and an toe crossing structure 44, the outermost layer of the toe crossing structure 44 is four T-shaped structures 45, and the four T-shaped structures 45 are centrosymmetric. Square patches 41, square ring structures 42, toe structures 43, resistors 44 and T-shaped structures 45 are centered in the area where they are located.
In one embodiment, rectangular slot 411 has a width ws=0.4 mm, a length ls=3.3 mm, a side length of square patch 41 of 6mm, a side length of bent square ring structure 42 of l1=2.25 mm, l2=2.74 mm, l3=0.65 mm, w1=0.2 mm, w3=0.7 mm, an intersecting toe length s=1.8 mm, a width d1=1.5 mm, a total length d=2 mm, a width w2=0.5 mm of resistor 43, a length l=3.3 mm of T-shaped structure 45, a width w=0.3 mm, a spacing a1=0.1 mm from the intersecting toe structure, and four T-shaped structures 45 are center-symmetrical.
Referring to fig. 6, the frequency selective surface 5 includes two mutually nested metal square ring slots, a larger square ring slot 51 and a smaller square ring slot 52. In one embodiment, the outer edge length l4=11 mm, the inner edge length l5=9.8 mm of the larger square ring slit 51, the outer edge length l6=7.2 mm, and the inner edge length l7=7 mm of the smaller square ring slit 52.
Referring to fig. 7, the microstrip radiating patch 7 is symmetrically etched with a pair of opposed hook-shaped slits 71. In one embodiment, the microstrip radiating patch 7 has a length l=9.6 mm, a width w=5 mm, a long side la=2.3 mm, a short side lb=1.5 mm, a connecting side lc=1.1 mm, and a width w1=0.3 mm of the etched two hook-shaped slits 71.
Referring to fig. 8, polarization conversion surface 6 is diagonally arranged with strip-shaped patches 61 and two opposite pi-shaped structures 62 at each end. In one embodiment, strip-shaped patch 61 has a length l1=6 mm, a width w1=2 mm, a length l=4.1 mm of pi-shaped structures 62, a width w=0.42 mm, and a spacing between two pi-shaped structures 62 of ld=1.3 mm.
The working principle of the invention is as follows: the dual-frequency microstrip antenna realizes dual-frequency radiation characteristics by etching a hook-shaped slot on a microstrip radiation patch, and can realize out-of-band RCS reduction of the antenna while ensuring good radiation performance of the antenna by loading a frequency selective wave absorber above the dual-frequency microstrip antenna; the polarization conversion surfaces are arranged in a checkerboard manner around the dual-frequency microstrip antenna, so that in-band RCS reduction can be realized, and the radiation performance of the antenna can be improved, thereby ensuring that the antenna has good radiation performance and realizing good full-band RCS reduction effect.
The technical effects of the invention are further described by combining simulation experiments:
1. simulation conditions and content:
1.1 simulation calculation of the frequency selective absorber in the above example was performed in the range of 3GHz-15GHz using commercial simulation software hfss_15.0, the transmission/reflection coefficient results are shown in fig. 9, and the absorber results are shown in fig. 10.
1.2 simulation calculations were performed on the polarization conversion surface in the above examples in the range of 3GHz-15GHz using commercial simulation software hfss_15.0, and the reflectance results are shown in fig. 11.
1.3 simulation calculations were performed on |s11| of the above-described embodiment using commercial simulation software hfss_15.0, the results of which are shown in fig. 12.
1.4 simulation calculations were performed using commercial simulation software hfss_15.0 on the far field radiation patterns of the above embodiments at 6.8Ghz and 10Ghz, the results being shown in fig. 13 (a), (b), 14 (a), (b), wherein: fig. 13 (a) shows an E-plane radiation pattern of the inventive antenna at 6.8GHz, fig. 13 (b) shows an H-plane radiation pattern of the inventive antenna at 6.8GHz, fig. 14 (a) shows an E-plane radiation pattern of the inventive antenna at 10GHz, and fig. 14 (b) shows an H-plane radiation pattern of the inventive antenna at 10 GHz.
1.5 simulation calculation was performed on the single-station radar cross section of the above embodiment under the electromagnetic wave vertical irradiation condition by using commercial simulation software hfss_15.0, and the frequency of the incident electromagnetic wave was changed from 3GHz to 15 GHz. The results are shown in figure 15 of the drawings,
2. simulation result analysis:
referring to fig. 9 and 10, in the embodiment of the invention, the frequency selective wave absorber has two pass bands at 6.8GHz and 10GHz, the insertion loss is 0.1dB and 0.19dB respectively, the |s11| is smaller than-10 dB within the range of 4.02GHz-14.38GHz, the bandwidth range of the wave absorber with the wave absorption rate larger than 0.8 is 3.81GHz-5.86GHz, 7.69GHz-9.03GHz and 11.51GHz-14.5GHz, and the out-of-band RCS reduction can be realized while the radiation performance of the antenna is ensured.
Referring to fig. 11, in the embodiment of the invention, polarization conversion can be realized at 6.8GHz and 10GHz on the polarization conversion surface, the co-polarization reflection coefficient is smaller than-10 dB in the range of 6.61GHz-6.9GHz and 9.7GHz-10.34GHz, and in-band RCS reduction can be realized while the radiation performance of the antenna is ensured.
Referring to FIG. 12, the inventive examples have dual frequency characteristics with |S11| less than-10 dB at 6.68GHz-6.87GHz and 9.83GHz-10.25 GHz.
Referring to fig. 13 (a) and 13 (b), the maximum radiation direction at the frequency point of 6.8GHz in the embodiment of the present invention is perpendicular to the surface of the radiation unit, and the maximum gain is 3.19dBi.
Referring to fig. 14 (a) and 14 (b), the maximum radiation direction at the frequency point of 10GHz in the embodiment of the present invention is perpendicular to the surface of the radiation unit, and the maximum gain is 5.71dBi.
Referring to fig. 15, when electromagnetic waves are perpendicularly irradiated to the embodiment of the present invention, RCS reduction exceeding 5dB is achieved in the 3.8GHz to 15GHz frequency band (119.1% relative bandwidth), and the average RCS reduction amount is 11.08dB, which means that the dual-band antenna of the embodiment of the present invention achieves low radar cross-section characteristics in a wide frequency band, and has a better broadband RCS reduction effect than in the prior art.
The simulation results show that the invention can ensure the radiation performance and realize the remarkable RCS reduction effect.
The invention is not limited to the above embodiments, and based on the technical solution disclosed in the invention, a person skilled in the art may make some substitutions and modifications to some technical features thereof without creative effort according to the technical content disclosed, and all the substitutions and modifications are within the protection scope of the invention.

Claims (7)

1. The broadband low-scattering double-frequency microstrip antenna is characterized by comprising square upper-layer dielectric plates (1), middle-layer dielectric plates (2) and lower-layer dielectric plates (3) which are arranged from top to bottom and are not contacted with each other;
the upper surface of the upper medium plate (1) is printed with periodically arranged
Figure QLYQS_1
A wave-absorbing surface (4), a plurality of wave-absorbing surfaces (4)>
Figure QLYQS_2
The method comprises the steps of carrying out a first treatment on the surface of the The wave-absorbing surface (4) comprises a square patch with rectangular grooves etched, an interdigital structure (44) andT-a profile structure (45);
rectangular grooves (411) etched on the wave absorbing surface (4) are symmetrically distributed along the diagonal direction, four sides of the square patch (41) are provided with bent square ring-shaped structures (42), each square ring-shaped structure (42) is provided with symmetrical and outwards extending toe-intersecting structures (44), and the outermost layer of each toe-intersecting structure (44) isTA structure (45) between the toe-crossing structure (44) and fourTA resistor (43) is loaded between the mould structures (45);
the upper surface of the middle layer dielectric plate (2) is printed with periodically arranged materials
Figure QLYQS_3
A frequency selective surface (5), -a frequency selective surface (5)>
Figure QLYQS_4
The method comprises the steps of carrying out a first treatment on the surface of the The frequency selective surface (5) comprises two mutually nested metal square ring slits;
the upper surface of the lower medium plate (3) is printed with chessboard arrangement
Figure QLYQS_5
A polarization conversion surface (6), a +.>
Figure QLYQS_6
The method comprises the steps of carrying out a first treatment on the surface of the The polarization conversion surface (6) is provided with strip-shaped patches (61) and n-shaped structures (62), the strip-shaped patches (61) of the polarization conversion surface (6) are distributed along a diagonal line, and two opposite n-shaped structures (62) are respectively arranged at two end parts of each strip-shaped patch (61);
the center of the antenna is printed with a microstrip radiation patch (7); the lower surface of the lower dielectric plate is printed with a metal radiation floor (8);
the microstrip radiation patch (7) feeds through a metal probe penetrating through the lower layer dielectric plate (3); the reduction of the out-of-band RCS of the antenna is achieved by means of a wave absorbing surface (4) and a frequency selective surface (5).
2. The broadband low scattering dual-band microstrip antenna of claim 1, wherein said periodic arrangement
Figure QLYQS_7
The centers of the wave absorbing surfaces (4) are positioned on the central normal line of the upper dielectric plate (1);
the periodically arranged
Figure QLYQS_8
The centers of the frequency selection surfaces (5) are positioned on the center normal line of the middle-layer dielectric plate (2);
the chessboard is arranged
Figure QLYQS_9
The polarization conversion surface (6) is arranged around the microstrip radiation patch (7), and the polarization conversion surface and the microstrip radiation patch are integrally distributed on the central normal line of the lower dielectric plate (3).
3. The broadband low-scattering dual-frequency microstrip antenna according to claim 2, wherein the wave-absorbing surface (4) is directly opposite to the frequency-selective surface (5) from top to bottom.
4. The broadband low-scattering dual-band microstrip antenna of claim 1, wherein said interdigital structure (44) is an interposed comb structure.
5. The broadband low-scattering dual-band microstrip antenna according to claim 1, wherein said frequency selective surface (5) is formed by two metal square-loop slots, an outer square-loop slot (51) and an inner square-loop slot (52), which are mutually nested.
6. The broadband low-scattering dual-band microstrip antenna according to claim 1, wherein said microstrip radiating patch (7) is symmetrically etched with a pair of opposed hook-shaped slots (71).
7. The broadband low scattering dual band microstrip antenna of any of claims 1-6, wherein the microstrip antenna achieves an RCS reduction of more than 5dB in the 3GHz-15GHz band at a relative bandwidth of 119.1%, the average RCS reduction being 11.08dB.
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