CN114361782B - Reconfigurable low RCS circularly polarized antenna array - Google Patents
Reconfigurable low RCS circularly polarized antenna array Download PDFInfo
- Publication number
- CN114361782B CN114361782B CN202210028580.XA CN202210028580A CN114361782B CN 114361782 B CN114361782 B CN 114361782B CN 202210028580 A CN202210028580 A CN 202210028580A CN 114361782 B CN114361782 B CN 114361782B
- Authority
- CN
- China
- Prior art keywords
- network
- diode
- microstrip
- dielectric substrate
- antenna array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention discloses a reconfigurable low-RCS circularly polarized antenna array, which comprises a metal resonance structure, a dielectric substrate, a metal copper-clad floor, a feed network dielectric substrate, a microstrip feed network, a diode bias network dielectric substrate and a diode bias network which are sequentially arranged, wherein the microstrip feed network penetrates through the feed network dielectric substrate, the metal copper-clad floor and the dielectric substrate through a metal probe to be connected with the metal resonance structure, so that circularly polarized radiation of the antenna array is realized; the diode bias network is connected with the microstrip feed network through a metalized through hole penetrating through a diode bias network medium substrate; the PIN type diode is loaded at the tail end of the microstrip feeder network to serve as an electronic switch, and when the diode is in a conducting state, the antenna array is in a radiation state; when the diode is in a cut-off state, the antenna array is in a scattering state. The invention has the advantages of low profile, high aperture utilization rate and reconfigurable antenna, and realizes the reduction of RCS of the antenna from the perspective of time domain invisibility.
Description
Technical Field
The invention belongs to the technical field of communication, and further relates to a reconfigurable low-RCS circularly polarized antenna array in the technical field of antennas.
Background
Radar is one of the most common detection means. During the detection process, the electromagnetic wave emitted by the radar is reflected if meeting an obstacle. The radar detects the outside world by receiving and processing the information in the reflected electromagnetic wave. The Radar Cross Section (RCS) represents the strength of the ability of a target to generate an echo under the irradiation of electromagnetic waves emitted by a radar, and is an important index for measuring the stealth characteristic.
In a stealth designed platform, taking an aircraft as an example, the air intake, the cockpit and the antenna are the three scattering sources that contribute most to the overall system RCS. The antenna needs to ensure its radiation performance, so the conventional method for reducing the RCS is difficult to be applied to the reduction of the RCS of the antenna. Antenna loading electromagnetic super-surfaces is a common means to achieve RCS reduction. Different electromagnetic super-surfaces can change certain properties of electromagnetic waves in a targeted manner, and RCS reduction is realized based on different principles. The polarization conversion surface (PCM) can realize the conversion of electromagnetic waves among different polarizations, and can be combined with an antenna through reasonable design, thereby achieving the effect of reducing RCS of the antenna without damaging the radiation performance of the antenna.
Generally, the super-surface is a passive structure, and the super-surface does not directly participate in radiation, so when loading the RCS of the super-surface reduction antenna, the super-surface and the antenna have a spatial competitive relationship, which results in a low aperture utilization rate of a common low RCS antenna. If the super-surface unit can be directly used as a radiator, the reduction of the RCS of the antenna can be realized, and the aperture utilization rate of the whole antenna array structure is improved. The metal structure multiplexing radiation scattering integrated low-RCS antenna can obviously improve the aperture utilization rate of the antenna, does not introduce additional structures such as a coating layer or a reflecting plate and the like, and has good low-profile characteristics.
Disclosure of Invention
In order to solve the above defects in the prior art, the present invention aims to provide a reconfigurable low RCS circularly polarized antenna array, which is used to solve the problems of low aperture efficiency and large profile of the existing low RCS antenna loading electromagnetic super surface, and realize low profile, high aperture utilization rate and reconfigurable antenna, and reduce RCS of the antenna from the perspective of time domain stealth.
The invention is realized by the following technical scheme.
The invention provides a reconfigurable low-RCS circularly polarized antenna array, which comprises a dielectric substrate, a metal copper-clad floor, a feed network dielectric substrate and a diode bias network dielectric substrate which are sequentially arranged from top to bottom, wherein a metal resonance structure is attached to the dielectric substrate, a microstrip feed network is arranged between the feed network dielectric substrate and the diode bias network dielectric substrate, and a diode bias network is arranged below the diode bias network dielectric substrate;
the micro-strip feed network penetrates through the feed network dielectric substrate, the metal copper-clad floor and the dielectric substrate through the metal probe and is connected with the metal resonance structure, so that circular polarization radiation of the antenna array is realized;
the diode bias network is connected with the microstrip feed network through a metalized through hole penetrating through a diode bias network medium substrate;
when the diode on the microstrip feed network is positively biased, the diode is short-circuited, and the antenna feeds power normally; when the diode is reversely biased, the diode is open-circuited, and the antenna realizes polarization conversion in a frequency band range under plane wave incidence.
In the technical scheme, the metal resonance structure is composed of M multiplied by N metal resonance structure units, and the metal resonance structure units are uniformly distributed in a checkerboard type arrangement by taking M/2 multiplied by N/2 as a group.
In the technical scheme, the metal resonance structure unit comprises a rectangular patch with a pair of cutting angles and isosceles right triangles and a group of parasitic branches with the same broadband and positioned on the outer side of the rectangular patch; the parasitic branches comprise a pair of branches which are vertically distributed and a branch which is parallel to the cutting angle.
In the above technical solution, the microstrip feed network includes a T-type power divider network, a meander line, a diode, a metal probe, and a chip inductor; the T-shaped power distribution network comprises six stages; each stage is a one-to-two power division microstrip line, the power division microstrip lines at each stage are connected in a tree branch, and the bending line is arranged on the tree branch; and a diode and a patch inductor are arranged at the tail end of the last-stage power dividing network, and the coaxial probe is used for exciting the unit of each metal resonance structure. The metal probe is positioned at the tail end of the last-stage power distribution network and between the diode and the chip inductor.
In the above technical solution, the six-stage T-type power dividing network includes a first one-to-two power dividing microstrip line, the first one-to-two power dividing microstrip line is connected to a pair of second one-to-two power dividing microstrip lines, and each of the second one-to-two power dividing microstrip lines is respectively connected to a pair of third one-to-two power dividing microstrip lines; in this way, each of the third, fourth, and fifth one-to-two power division microstrip lines is connected to a pair of next-stage one-to-two power division microstrip lines, and the sixth one-to-two power division microstrip line includes sixteen pairs of one-to-two power division microstrip lines.
In the technical scheme, the metal probe penetrating through the feed network dielectric substrate, the metal copper-clad floor and the dielectric substrate is connected with each unit of the metal resonance structure and the tail end of the last stage one-to-two power distribution network of the microstrip feed network.
In the above technical solution, the bending line includes a 180 ° phase shift line and two 90 ° phase shift lines, wherein the 180 ° phase shift line is located between the first one-in-two power division microstrip line and the second one-in-two power division microstrip line, and the two 90 ° phase shift lines are respectively located between the second one-in-two power division microstrip line and the third one-in-two power division microstrip line, and are distributed in central symmetry.
In the technical scheme, the patch inductor is added at the branch of the first-stage one-to-two power division microstrip line and is connected to the diode bias network.
In the technical scheme, the diode bias network comprises leads and metalized through holes, a plurality of branch leads are connected to the main lead in parallel, the metalized through holes are connected to the branch leads, and each branch lead is connected to the negative electrode of an external power supply; a branch line lead connected to the positive electrode of the external power supply;
one end of a metallized through hole penetrating through the diode bias network medium substrate is connected with a lead and is communicated with an external power supply, and the other end of the metallized through hole is connected with the first-stage one-to-two power division microstrip line branch and the patch inductor at the tail end of the last-stage power division network.
In the technical scheme, the first-stage one-to-two power division microstrip line branch is connected with the anode of an external power supply through a branch line lead connected through a metalized through hole penetrating through a diode bias network medium substrate;
the tail end of the last-stage power distribution network is connected with each branch wire through a metalized through hole penetrating through the diode bias network medium substrate and is connected with the cathode of an external power supply.
The antenna units are arranged in a checkerboard manner to form an array and feed the array through the sequentially rotating feed network, switching of the antenna units between a radiation state and a polarization conversion state is achieved by controlling the connection and disconnection of the PIN diodes, and finally the reconfigurable low RCS circularly polarized antenna array capable of switching between a radiation circularly polarized electromagnetic wave state and a low scattering state is achieved.
Furthermore, the antenna unit directly utilizes the super-surface unit feed to realize 45-degree linear polarization radiation, in order to reduce electromagnetic energy offset of radiation among antenna arrays, the feed network among the sub-arrays forms 90-degree phase difference by changing the length of a current path so as to form circular polarization radiation, and meanwhile, a diode bias network is introduced so that direct current bias is more convenient.
Due to the adoption of the technical scheme, the invention has the following beneficial effects:
first, the present invention considers the high uniformity of the super surface unit and the microstrip patch antenna in terms of form, feeds power to the super surface unit, so that the super surface unit can be directly used as a radiator, and improves the aperture utilization rate of the whole antenna array structure while realizing the reduction of the RCS of the antenna.
Secondly, the invention loads a PIN diode as an electronic switch at the end of the feeder. When the diode is positively biased, the PIN diode is equivalent to a short circuit, and the antenna can normally feed; when the diode is reversely biased, the PIN diode is equivalent to an open circuit, the influence of a feeder line can be ignored, and the designed unit structure can realize polarization conversion in a certain frequency band range under the incidence of plane waves.
Thirdly, in the invention, because the position of the diode is positioned on the microstrip feed line, the external connecting leads can be connected with an external power supply at the starting end of the first-stage power distribution network and the tail end of each last-stage power distribution network, and the diode can directly utilize the metal strip of the microstrip line to carry out direct current bias in the mode of external connecting leads. However, considering that the size of the array antenna array is 8 × 8, the number of external wires is large when the array antenna array is connected with a direct current power supply. For the convenience of connection, a diode bias circuit is additionally designed to be placed right below the antenna array.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention:
FIG. 1 is a perspective view of the present invention;
FIG. 2 is a top view of a metal resonant structure of the present invention;
FIG. 3 is a schematic diagram of a microstrip feed network according to the present invention;
fig. 4 is a top view of the present invention and antenna unit (without diode biasing network);
FIG. 5 is a schematic diagram of a diode biasing network according to the present invention;
FIGS. 6 (a) and (b) are schematic diagrams of a top view and a perspective structure of the embodiment of the present invention;
FIGS. 7 (a) and (b) are schematic structural diagrams of the microstrip feed network loaded with diode bias network according to the present invention;
fig. 8 is a schematic diagram of a three-dimensional structure and a size of an antenna unit according to an embodiment of the present invention;
fig. 9 is a schematic size diagram of a microstrip feed network structure provided in an embodiment of the present invention;
fig. 10 is a simulation graph of the reflection coefficient of the antenna array according to the embodiment of the present invention;
fig. 11 is a simulation graph of the axial ratio of the antenna array according to the embodiment of the present invention;
fig. 12 is a simulation graph of the maximum radiation direction gain of the antenna array according to the embodiment of the present invention;
fig. 13 is a simulation graph of the antenna array and the reference metal floor single station RCS provided in the embodiment of the present invention.
In the figure: 1. a metallic resonant structure; 2. a dielectric substrate; 3. a metal copper-clad floor; 4. a feed network dielectric substrate; 5. a microstrip feed network; 6. a diode-biased network dielectric substrate; 7. a diode biasing network;
11. rectangular paster; 12. parasitic branch knots;
51. a T-type power distribution network; 52. a bending line; 52a, 180 ° phase shift line; 52b, 90 ° phase shift lines; 53. a diode; 54. a metal probe; 55. a chip inductor; 56. the first stage divides the microstrip line branch into two power branches; 57. the last stage of power division network end;
71. metallizing the through-hole; 72. a wire; 73. a positive electrode; 74. and a negative electrode.
Detailed Description
The present invention will now be described in detail with reference to the drawings and specific embodiments, wherein the exemplary embodiments and descriptions of the present invention are provided to explain the present invention without limiting the invention thereto.
Referring to fig. 1, the overall structure of a reconfigurable low RCS circularly polarized antenna array of the present invention is further described.
The antenna array comprises four layers of dielectric substrates from top to bottom: the metal resonance type power supply comprises a dielectric substrate 2, a metal copper-clad floor 3, a feed network dielectric substrate 4 and a diode bias network dielectric substrate 6, wherein a metal resonance structure 1 is attached to the dielectric substrate 2, a microstrip feed network 5 is arranged between the feed network dielectric substrate 4 and the diode bias network dielectric substrate 6, and a diode bias network 7 is arranged below the diode bias network dielectric substrate 6.
As shown in fig. 2, the antenna metal resonance structure of the present invention is composed of 64 metal resonance structure units of 8 × 8, and the metal resonance structure units are uniformly distributed in a checkerboard arrangement with M/2 × N/2 as a group. And the polarization of the antenna is 45 linear polarization when the antenna works, if all units feed in phase, part of electromagnetic energy of the antenna array can be offset, and in order to ensure the effective utilization of the energy, the polarization form of the antenna array is determined to be circular polarization.
The metal resonance structure unit comprises a rectangular patch 11 with a pair of isosceles right triangles at a tangent angle and a group of parasitic branches 12 with the same broadband and positioned on the outer side of the rectangular patch 11; the parasitic branches 12 include a pair of branches that run perpendicular to each other and a branch that runs parallel to the cut angle.
As shown in fig. 3, the microstrip feed network structure includes a T-type power splitting network 51, a meander line 52, a diode 53, a metal probe 54, and a patch inductor 55.
The meander line 52 on the T-shaped power distribution network 51 includes a 180 ° phase shift line 52a and two 90 ° phase shift lines 52b. The T-type power distribution network 51 includes six stages; each stage is a one-to-two power division microstrip line, the first stage is connected with a pair of second stage one-to-two power division microstrip lines, and each second stage one-to-two power division microstrip line is respectively connected with a pair of third stage one-to-two power division microstrip lines; each second-stage one-to-two power division microstrip line is connected with two pairs of third-stage one-to-two power division microstrip lines in common; each third-stage one-to-two power division microstrip line is respectively connected with a pair of fourth-stage one-to-two power division microstrip lines, and each third-stage one-to-two power division microstrip line is commonly connected with four pairs of fourth-stage one-to-two power division microstrip lines; each fourth-stage one-to-two power division microstrip line is respectively connected with a pair of fifth-stage one-to-two power division microstrip lines, and each fourth-stage one-to-two power division microstrip line is connected with eight pairs of fifth-stage one-to-two power division microstrip lines in total; each fifth-level one-to-two power division microstrip line is respectively connected with a pair of sixth-level one-to-two power division microstrip lines, and each fifth-level one-to-two power division microstrip line is connected with sixteen pairs of sixth-level one-to-two power division microstrip lines; a six-stage power division network is adopted to obtain a 1-64-stage power division network, and all stages of power division microstrip lines are connected in a tree branch shape. By changing the length of the current path, 90-degree phase difference is provided between adjacent sub-array units, and the circular polarization radiation of the whole antenna array is realized.
The microstrip feed network 5 is based on the design principle of a T-shaped power division network and introduces a meander line 52, the meander line 52 includes a 180 ° phase shift line 52a and two 90 ° phase shift lines 52b, wherein the 180 ° phase shift line 52a is located on a first-stage one-to-two power division microstrip line, and the two 90 ° phase shift lines 52b are respectively located on a second-stage one-to-two power division microstrip line and are distributed in central symmetry, so that a 90 ° phase difference between adjacent sub-arrays can be realized. And exciting the units of each metal resonance structure at the tail end of the last-stage power distribution network of the microstrip feed line by using coaxial probes.
The form of the length of the current path is changed through the meander line 52, so that a phase difference of 90 degrees is provided between adjacent sub-array units, and the circularly polarized radiation of the whole antenna array is realized.
Further, a diode 53 and a chip inductor 55 are arranged at the tail end 57 of the last stage power division microstrip line, a PIN-type diode 53 is loaded between the metal probes 54 to serve as an electronic switch, the chip inductor 55 is added at the other side of the metal probes and the branch 56 of the first stage one-to-two power division microstrip line to avoid the influence of the introduction of the diode bias circuit 7 on the performance of the original antenna array, and the other side of the chip inductor 55 is connected to a metalized through hole 71 of the diode bias network 7 to excite the units of each metal resonant structure 1 through coaxial probes.
A metal probe 54 is located at the end 57 of the last stage power splitting network and between the diode 53 and the patch inductor 55. And a metal probe 54 penetrating through the feed network dielectric substrate 4, the metal copper-clad floor 3 and the dielectric substrate 2 is connected with each unit of the metal resonance structure 1 and the tail end 57 of the last-stage power division network of the microstrip feed network 5.
As shown in fig. 4 and fig. 7 (b), the metal probe 54 is excited to each element of the metal resonance structure 1 at the end 57 of the last stage power dividing network of the microstrip feed line, a circular aperture with radius r1 is etched on the metal copper-clad floor 3, and the metal probe 54 with radius r2 is arranged on a diagonal line of the metal resonance structure element. The metal probe 54 passing through the feed dielectric substrate 4, the metal copper-clad floor 3 and the dielectric substrate 2 is connected with each unit of the metal resonance structure 1 and the tail end of the last stage power division network of the microstrip feed network 5, and the two sides of the metal probe are respectively provided with a PIN diode and a patch inductor.
As shown in fig. 5, the diode bias network 7 includes a plurality of branch wires 71 and wires 72, the branch wires are connected to the main wire in parallel, the metalized through holes 71 are connected to the branch wires, and each branch wire is connected to a negative electrode 74 of the external power supply; and a branch conductor connected to the positive electrode 73 of the external power source. One end of a connecting wire 72 penetrating through a metalized through hole 71 of the diode bias network medium substrate 6 is communicated with an external power supply, and the other end of the connecting wire is connected with the first-stage one-to-two power division microstrip line branch 56 and the patch inductor 55 at the tail end of the last-stage power division network.
As shown in fig. 6 (a), (b) and fig. 7 (a), (b), the first-stage one-to-two power division microstrip line branch 56 is connected with the positive electrode 73 of the external power supply by a branch wire connected through a metalized through hole 71 penetrating through the diode bias network dielectric substrate 6; the final stage power dividing network end 57 is connected with each branch wire through a metalized through hole 71 passing through the diode bias network medium substrate 6 to be connected with the cathode 74 of the external power supply.
In the invention, because the position of the diode is positioned on the microstrip feed line, the external connecting lead at the branch of the first-stage one-to-two power division microstrip line and the tail end of each last-stage power division network can be connected with an external power supply; the branches of the power division microstrip line are connected with the anode of an external power supply through a metalized through hole connecting lead, and the tail end of each last-stage power division network is connected with the cathode of the external power supply through 64 metalized through hole connecting leads of 8 multiplied by 8, so that direct current bias of the diode is realized.
The micro-strip feed network 5 penetrates through the feed dielectric substrate 4, the metal copper-clad floor 3 and the dielectric substrate 2 through a metal probe to be connected with the metal resonance structure 1, so that circular polarization radiation of the antenna array is realized; the diode bias network 7 is connected to the microstrip feed network 5 by metallized vias through the diode bias network dielectric substrate 6.
When the diode is positively biased, the PIN diode is short-circuited, and the antenna feeds power normally; when the diode is reversely biased, the PIN diode is open-circuited, and the antenna realizes polarization conversion in a frequency band range under the incidence of plane waves.
The invention is further illustrated by the following specific examples.
F4B with the relative dielectric constant of 2.65 of the dielectric substrate 2 is adopted, and the thickness is 2mm; the feed network dielectric substrate 4 is made of F4B with the dielectric constant of 2.65 and the thickness of 0.4mm; the dielectric substrate 6 of the diode biasing network has a dielectric constant of 2.65F 4B and a thickness of 0.254mm.
The metal resonance structure 1 of this embodiment is composed of 8 × 8 metal resonance structural units, and the metal resonance structural units are arranged uniformly according to a checkerboard pattern with 4 × 4 as a group. The metal resonance structure unit structure comprises a rectangular patch 11 with a pair of cutting corners and an isosceles right triangle and a group of parasitic branches 12 with the same broadband, wherein the parasitic branches 12 comprise a pair of branches which are vertically distributed and a branch which is parallel to the cutting corners.
The dimensions of the metal resonant structure of the present embodiment are given in fig. 8. Table 1 shows the values of the parameters of the metal resonant structure.
TABLE 1, FIG. 8 values of the parameters (mm) of the metal resonance structure
| L_substract | H_substract1 | | Wp | L1 | |
| 15 | 2 | 8 | 2.3 | 7 | |
| L2 | W1 | W2 | W3 | H_substract2 | |
| 4 | 0.4 | 4 | 4.6 | 0.4 | |
| r1 | r2 | L_feed | W_feed | P_feed | |
| 1 | 0.3 | 6.4 | 0.8 | 5.8 |
The reduction of the RCS of the antenna is realized by the polarization conversion characteristic and the checkerboard arrangement of the antenna units.
In one embodiment, the length and width of the antenna array are all L0, L0=120mm, the overall cross-sectional height is 0.147 λ, and λ is the wavelength in air corresponding to the center frequency of 10 GHz. The interval between the reconfigurable low RCS circularly polarized antenna and the lower diode bias network is 1.746mm.
As shown in fig. 9, a schematic diagram of the microstrip feed network of the present embodiment is given, and table 2 shows structural parameter values of the microstrip feed network.
TABLE 2, FIG. 9 microstrip feed network architecture size (mm)
| L_feed1 | L_feed2 | L_feed3 | L_feed4 | L_feed5 | L_feed6 |
| 60 | 28.3 | 23.1 | 54.8 | 15 | 15 |
| L_feed7 | L_feed8 | L_feed9 | L_feed10 | W_feed1 | W_feed2 |
| 7.8 | 4.8 | 4.9 | 4.8 | 0.8 | 0.4 |
| W_feed3 | W_feed4 | W_feed5 | W_feed6 | W_feed7 | W_feed8 |
| 0.8 | 0.4 | 0.8 | 0.4 | 0.8 | 0.4 |
| W_feed9 | W_feed10 | W_feed11 | W_feed12 | W_feed13 | tt1 |
| 0.8 | 0.4 | 0.8 | 0.1 | 0.6 | 6.8 |
| tt2 | dd1 | dd2 | tt3 | dd3 | |
| 2.1 | 2.5 | 0.45 | 2.1 | 1.8 |
In this example, the dielectric substrate had a relative dielectric constant of 2.65 of F4B and a thickness of 2mm. The feed network dielectric substrate is made of F4B with the dielectric constant of 2.65 and the thickness of 0.4mm. The dielectric substrate of the diode bias network has a dielectric constant of 2.65F 4B and a thickness of 0.254mm.
When the diode is in a conducting state, the antenna array is in a radiation state; when the diode is in a cut-off state, the antenna array is in a scattering state, and further the RCS of the antenna is reduced from the perspective of time domain stealth.
Table 3 shows diode bias structure dimensions.
TABLE 3 FIG. 9 diode bias size (mm)
| H_substract3 | H_substract4 | W_feed13 | r_feed |
| 1.746 | 0.254 | 0.6 | 0.3 |
The technical effects of the present invention can be further described by the following simulation experiments.
1. Simulation conditions are as follows:
the antenna array structure of the invention described in fig. 2 is utilized to carry out simulation experiments on the radiation performance of the antenna array structure working on the frequency band of 7.8GHz-11.8GHz and the scattering performance of the antenna array structure working on the frequency band of 8GHz-13 GHz; in the simulation process, the on state and the off state of the diode are simulated by the presence or absence of the metal patch at the end of the feeder.
2. Emulated content
The reflection coefficient of the above embodiment in the on state of the diode was calculated by simulation using commercial simulation software HFSS _15.0, and the result is shown in fig. 10.
The axial ratio of the above embodiment in the on state of the diode was calculated by simulation using commercial simulation software HFSS — 15.0, and the result is shown in fig. 11.
The antenna gain of the above embodiment in the on state of the diode was calculated by simulation using commercial simulation software HFSS _15.0, and the result is shown in fig. 12.
Simulation calculations were performed on the single-station RCS of the above-described embodiment and the reference metal floor in the off state of the diode using the commercial simulation software HFSS _15.0, and the results are shown in fig. 13.
3. And (3) simulation result analysis:
in fig. 10, the antenna array is in a radiating state when the diode is in a conducting state. In this state, the reflection coefficients of the antenna array are all less than-10 dB between 7.8GHz and 11.8GHz, the matching characteristic of the antenna is good, and the impedance bandwidth is 40.8%. At the designed operating frequency of 10GHz, the reflection coefficient is-25 dB.
In fig. 11, it can be seen that the axial ratio of the antenna array of the present invention in the maximum radiation direction between 9.5GHz and 10.8GHz is less than 3dB, the axial ratio bandwidth is 12.8%, and at the designed operating frequency of 10GHz, the axial ratio is 0.75dB, and the antenna array has good circular polarization characteristics.
In fig. 12, it can be seen that the inventive antenna array in the radiating state has a right-hand circularly polarized gain of 19.7dBic in the maximum radiation direction at 10 GHz.
In fig. 13, when the diode is in the off state, the antenna array is in the scattering state. When a plane wave is incident to the antenna array in this state, the scattering characteristic of the antenna can be equivalent to the scattering characteristic of the passive polarization conversion surface under the incidence of the plane wave. So the same size metal floor is used as a reference. The antenna array has a reduction effect between 8GHz and 13GHz, the reduction frequency band is basically consistent with the polarization conversion bandwidth of the final antenna unit under the incidence of plane waves, and the designed antenna array has good RCS reduction characteristics within the range of the antenna working frequency band. The designed antenna array has the average reduction of single-station RCS of 11.1dB between 8.6GHz and 13.2GHz, the reduction bandwidth is 42.2%, and when the incident electromagnetic wave frequency is 10GHz, the single-station RCS of the antenna array is reduced by 11.6dB.
The simulation results show that the invention has good circularly polarized radiation and low scattering performance, and compared with the prior art, the invention improves the aperture utilization rate of the antenna and ensures a smaller profile.
The present invention is not limited to the above embodiments, and based on the technical solutions disclosed in the present invention, those skilled in the art can make some substitutions and modifications to some technical features without creative efforts based on the disclosed technical contents, and these substitutions and modifications are all within the protection scope of the present invention.
Claims (9)
1. A reconfigurable low-RCS circularly polarized antenna array is characterized by comprising a dielectric substrate (2), a metal copper-clad floor (3), a feed network dielectric substrate (4) and a diode bias network dielectric substrate (6) which are sequentially arranged from top to bottom, wherein a metal resonance structure (1) is attached to the dielectric substrate (2), a microstrip feed network (5) is arranged between the feed network dielectric substrate (4) and the diode bias network dielectric substrate (6), and a diode bias network (7) is arranged below the diode bias network dielectric substrate (6);
the micro-strip feed network (5) penetrates through the feed network dielectric substrate (4), the metal copper-clad floor (3) and the dielectric substrate (2) through the metal probe (54) to be connected with the metal resonance structure (1), so that circular polarization radiation of the antenna array is realized;
the diode bias network (7) is connected with the microstrip feed network (5) through a metalized through hole (71) penetrating through a diode bias network dielectric substrate (6);
when the diode (53) on the microstrip feed network (5) is positively biased, the diode (53) is short-circuited, and the antenna feeds power normally; when the diode (53) is reversely biased, the diode (53) is open-circuited, and the antenna realizes polarization conversion in a frequency band range under the incidence of plane waves;
the antenna units are arranged in a checkerboard manner to form an array and sequentially rotate a feed network to feed, and the switching of the antenna units between a radiation state and a polarization conversion state is realized by controlling the on-off of PIN diodes, so that the switching between radiation circular polarization electromagnetic waves and a low scattering state is realized;
the metal resonance structure unit comprises a rectangular patch (11), a pair of isosceles right triangles on one diagonal line of the rectangular patch (11) is cut off, and the metal resonance structure unit also comprises a group of parasitic branches (12) with the same width and positioned on the outer side of the rectangular patch (11); the parasitic branches (12) comprise two pairs of branches which are vertically distributed and a pair of branches which are parallel to the cutting angle.
2. The reconfigurable low RCS circularly polarized antenna array according to claim 1, wherein the metal resonant structure (1) is composed of M x N metal resonant structure units, the metal resonant structure units are in a group of M/2 x N/2 and are uniformly distributed according to a checkerboard arrangement; where M is an even number greater than zero and N is an even number greater than zero.
3. The reconfigurable low RCS circularly polarized antenna array of claim 1, wherein the microstrip feed network (5) comprises a T-shaped power splitting network (51), a meander line (52), a diode (53), a metal probe (54), and a patch inductor (55); the T-shaped power distribution network (51) comprises six stages; each stage is a one-to-two power division microstrip line, the power division microstrip lines at each stage are connected in a tree-shaped branch, and a bending line (52) is arranged on the tree-shaped branch; and a diode (53) and a patch inductor (55) are arranged at the tail end (57) of the last-stage power distribution network, and the metal probe (54) is positioned at the tail end (57) of the last-stage power distribution network and between the diode (53) and the patch inductor (55).
4. The reconfigurable low RCS circularly polarized antenna array of claim 3, wherein the six-level T-shaped power dividing network (51) comprises a first level one-to-two power dividing microstrip, the first level one-to-two power dividing microstrip connects to a pair of second level one-to-two power dividing microstrip, each of the second level one-to-two power dividing microstrip connects to a pair of third level one-to-two power dividing microstrip respectively; in this way, each of the third, fourth, and fifth one-to-two power division microstrip lines is connected to a pair of next-stage one-to-two power division microstrip lines, and the sixth one-to-two power division microstrip line includes sixteen pairs of one-to-two power division microstrip lines.
5. The reconfigurable low RCS circularly polarized antenna array according to claim 4, wherein a metal probe (54) passing through the feed network dielectric substrate (4), the metal copper-clad floor (3) and the dielectric substrate (2) is connected with each unit of the metal resonant structure (1) and the end of the last stage one-to-two power division network of the microstrip feed network (5).
6. The reconfigurable low RCS circularly polarized antenna array of claim 4, wherein the meander line (52) comprises a 180 ° phase shift line (52 a) and two 90 ° phase shift lines (52 b), wherein the 180 ° phase shift line (52 a) is located between the first level one-by-two power division microstrip line and the second level one-by-two power division microstrip line, and the two 90 ° phase shift lines (52 b) are located between the second level one-by-two power division microstrip line and the third level one-by-two power division microstrip line, respectively, and are distributed in a central symmetry manner.
7. The reconfigurable low RCS circularly polarized antenna array of claim 4, characterized in that a patch inductance (55) is added at the first stage one-to-two power division microstrip line branch (56), the patch inductance (55) being connected to the diode bias network (7).
8. The reconfigurable low RCS circularly polarized antenna array of claim 7, wherein the diode bias network (7) comprises a plurality of branch conductors (72) and a plurality of metalized through holes (71), wherein the plurality of branch conductors are connected to the main conductor in a parallel distribution, the metalized through holes (71) are connected to the plurality of branch conductors, and each branch conductor is connected to a negative electrode (74) of an external power supply; further comprising a branch conductor connected to the positive pole (73) of the external power supply;
one end of a metallized through hole (71) penetrating through the diode bias network medium substrate (6) is connected with a lead (72) to be communicated with an external power supply, and the other end of the metallized through hole is connected with the first-stage one-to-two power division microstrip line branch (56) and the patch inductor (55) at the tail end (57) of the last-stage power division network.
9. The reconfigurable low RCS circularly polarized antenna array of claim 7, wherein the first stage one-to-two power division microstrip line branches (56) are connected to the positive electrode (73) of an external power supply by connecting branch line conductors through metallized through holes (71) passing through the diode bias network dielectric substrate (6);
and the tail end (57) of the last-stage power distribution network is connected with each branch wire through a metalized through hole (71) penetrating through the diode bias network medium substrate (6) and is connected with the cathode (74) of an external power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210028580.XA CN114361782B (en) | 2022-01-11 | 2022-01-11 | Reconfigurable low RCS circularly polarized antenna array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210028580.XA CN114361782B (en) | 2022-01-11 | 2022-01-11 | Reconfigurable low RCS circularly polarized antenna array |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114361782A CN114361782A (en) | 2022-04-15 |
| CN114361782B true CN114361782B (en) | 2022-12-02 |
Family
ID=81108306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210028580.XA Active CN114361782B (en) | 2022-01-11 | 2022-01-11 | Reconfigurable low RCS circularly polarized antenna array |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114361782B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115566435B (en) * | 2022-09-29 | 2024-03-22 | 重庆大学 | PIN diode-based transmission-reflection reconfigurable polarization conversion super-surface |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009130483A (en) * | 2007-11-21 | 2009-06-11 | Dainippon Printing Co Ltd | Contactless ic tag and method for manufacturing contactless ic tag |
| CN204905443U (en) * | 2015-07-17 | 2015-12-23 | 深圳市华颖泰科电子技术有限公司 | Circular polarization reconfigurable microstrip antenna |
| CN111211414A (en) * | 2020-03-06 | 2020-05-29 | 电子科技大学 | Novel reconfigurable monopulse antenna |
| WO2021120771A1 (en) * | 2019-12-19 | 2021-06-24 | 华南理工大学 | Millimeter-wave end-fire circularly polarized antenna and wireless communication device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10965035B2 (en) * | 2017-05-18 | 2021-03-30 | Skyworks Solutions, Inc. | Reconfigurable antenna systems with ground tuning pads |
| CN114450855A (en) * | 2019-09-30 | 2022-05-06 | 华为技术有限公司 | Packaged antenna system integrated with filtering function and communication equipment |
| CN112928484B (en) * | 2021-01-26 | 2022-03-25 | 南京航空航天大学 | Low-RCS (Radar Cross section) coding super-surface antenna capable of dynamically regulating and controlling scattering performance and design method thereof |
-
2022
- 2022-01-11 CN CN202210028580.XA patent/CN114361782B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009130483A (en) * | 2007-11-21 | 2009-06-11 | Dainippon Printing Co Ltd | Contactless ic tag and method for manufacturing contactless ic tag |
| CN204905443U (en) * | 2015-07-17 | 2015-12-23 | 深圳市华颖泰科电子技术有限公司 | Circular polarization reconfigurable microstrip antenna |
| WO2021120771A1 (en) * | 2019-12-19 | 2021-06-24 | 华南理工大学 | Millimeter-wave end-fire circularly polarized antenna and wireless communication device |
| CN111211414A (en) * | 2020-03-06 | 2020-05-29 | 电子科技大学 | Novel reconfigurable monopulse antenna |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114361782A (en) | 2022-04-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108511924B (en) | Broadband end-fire antenna array for millimeter wave communication system | |
| JP2007135178A (en) | Partial reflection surface antenna | |
| CN107768819B (en) | End-fire millimeter wave antenna with controllable radiation direction | |
| CN113506987B (en) | Broadband high-gain circularly polarized filter antenna and wireless communication equipment | |
| CN112751184B (en) | Phased array antenna with high radiation efficiency and low scattering characteristic | |
| CN111063990B (en) | High-gain double-circularly-polarized antenna structure based on super-surface loading | |
| CN115377703B (en) | K-waveband multi-layer feed monopulse array antenna | |
| WO2022262876A1 (en) | High-gain and low-rcs broadband circularly polarized metasurface antenna based on novel sequential rotation feeding network | |
| CN114361782B (en) | Reconfigurable low RCS circularly polarized antenna array | |
| CN113193384B (en) | Array antenna | |
| CN113506976A (en) | High-gain circularly polarized antenna and wireless communication device | |
| CN109524799B (en) | Directional diagram scanning patch antenna loaded with variable capacitance diode | |
| Iizasa et al. | High gain 4× 4 slot dipole antenna array in the 5GHz band | |
| CN209948058U (en) | Large-spacing low-grating-lobe electric large microstrip array antenna based on high-order odd-order mode resonance | |
| CN211670320U (en) | ISGW (integrated signal ground wire) beam scanning leaky-wave antenna | |
| CN208690501U (en) | SIW slot antenna system based on 77GHz millimetre-wave radar | |
| CN114865288B (en) | MSTL-based frequency scanning antenna and microstrip transmission line duplex conformal circuit | |
| CN217009551U (en) | End-fire antenna and electronic equipment | |
| Zhai et al. | Design of the antenna array with a novel feeding network | |
| CN115621722B (en) | Logarithmic period dipole antenna with substrate integrated double-line feed and processing method | |
| CN211556129U (en) | Leaky-wave antenna | |
| CN113745816B (en) | Mixed mode patch antenna with self decoupling and filtering characteristics | |
| CN214589260U (en) | Side-fed microstrip antenna | |
| CN114498011B (en) | High-performance microstrip array antenna | |
| Liu et al. | Design of a dual-band SIW antenna array |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |