CN114361292A - 一种背接触铜铟镓硒太阳电池及其制造方法 - Google Patents

一种背接触铜铟镓硒太阳电池及其制造方法 Download PDF

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CN114361292A
CN114361292A CN202111641401.1A CN202111641401A CN114361292A CN 114361292 A CN114361292 A CN 114361292A CN 202111641401 A CN202111641401 A CN 202111641401A CN 114361292 A CN114361292 A CN 114361292A
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semiconductor layer
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彭寿
殷新建
汪元元
马立云
吴一民
方建鹏
陈瑛
储静远
盖琳琳
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China Triumph International Engineering Co Ltd
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Abstract

本发明提供一种背接触铜铟镓硒太阳电池及其制造方法，提供一个透明衬底，在透明衬底上形成p型的铜铟镓硒光吸收层；在所述铜铟镓硒光吸收层表面设计交替排列的n区域和p+区域，采用掩膜的方式在所述n区域沉积n型半导体层，并在n型半导体层表面覆盖光刻胶；在所述p+区域通过掩膜沉积p+半导体层；去除光刻胶，在特定区域印刷绝缘胶，得到绝缘图案分隔开所述n型半导体层和p+半导体层；在所述n型半导体层上和p+半导体层上金属化，形成连接n型半导体层区域的金属电极α和连接p+半导体层区域的金属电极β，金属电极α和金属电极β呈插指状排布。

Description

一种背接触铜铟镓硒太阳电池及其制造方法
技术领域
本发明属于光伏电池技术领域，特别是涉及一种背接触铜铟镓硒太阳电池的制造方法。
背景技术
铜铟镓硒(CuInGaSe2，简称CIGS)薄膜太阳能电池是一种能够将光能转换成电能的器件，其基本结构包括p型CIGS和n型CdS/In2S3半导体材料相互接触后形成的PN异质结具有光吸收系数高，温度系数小、弱光特性好，衰减小，光电转化效率高，最高转换效率可达22.6％的优势。其生产制备工艺绿色环保，颜色丰富，非常适合应用于光伏建筑一体化(BIPV)。
传统的CIGS薄膜组件底电极为不透明的钼，因此光吸收面为需要通过TCO顶电极以及带有封装胶层的盖板玻璃，光能损失较高。而且电池内串联技术是铜铟镓硒薄膜太阳能组件生产的关键技术之一，需要将整块的多层膜结构切割和金属化，制作背电极形成多电池片串联结构组件，切割采用多次激光刻线加工实现，加工过程冗长，需要配置大量微视传感器，成本很高。此外，激光刻线造成的“死区”不能用于发电，直接影响组件发电效率。因此，针对这些问题进行适应性改善实属必要。
发明内容
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种背接触铜铟镓硒太阳电池的制造方法，用于解决现有技术中铜铟镓硒太阳电池组件工艺过程在激光划线工艺复杂冗长，形成“死区”的问题。
为实现上述目的及其他相关目的，本发明提供一种背接触铜铟镓硒太阳电池的制造方法，包括步骤：
1)提供一个透明衬底，在透明衬底上形成p型的铜铟镓硒光吸收层；
2)在所述铜铟镓硒光吸收层表面设计交替排列的n区域和p+区域，采用掩膜的方式在所述n区域沉积n型半导体层，并在n型半导体层表面覆盖光刻胶；
3)在所述p+区域通过掩膜沉积p+半导体层；
4)去除光刻胶，在特定区域印刷绝缘胶，得到绝缘图案分隔开所述n型半导体层和p+半导体层；
5)在所述n型半导体层上和p+半导体层上金属化，形成连接n型半导体层区域的金属电极α和连接p+半导体层区域的金属电极β，金属电极α和金属电极β呈插指状排布。
可选地，所述衬底层为超白玻璃基板、钢化玻璃基板及有机玻璃基板中的一种。
可选地，所述铜铟镓硒光吸收层的厚度为1500nm～2500nm，沉积方法包括共蒸发法或溅射后硒化。
可选地，所述n型半导体层包括硫化镉、硫化锌和硫化铟中的一种或多种，所述n型半导体层的厚度为50～200nm。
可选地，所述p+半导体层为CuxS、CuxO、NiO层，厚度为50～200nm。
可选地，所述金属电极α和金属电极β的形成方法为掩膜溅射或丝网印刷，材质包括Au、Ag、Cu、Mo、Ni。
本发明还提供一种背接触铜铟镓硒太阳电池，结构包括：
透明衬底；
铜铟镓硒光吸收层，附着在所述透明衬底一侧；
交替排列的n型半导体层和p+半导体层，附着在所述铜铟镓硒光吸收层上，所述n型半导体层和p+半导体层通过绝缘图案分隔开；
金属电极α和金属电极β，分别连接n型半导体层区域的和p+半导体层区域，所述金属电极α和金属电极β呈插指状排布。
如上所述，本发明的一种背接触铜铟镓硒太阳电池及其制造方法，具有以下有益效果：直接在透明电极上形成光吸收层，实现CIGS受光面位于镀膜基板，并且免除了冗长的激光划线工艺，实现组件化的串并联，工艺相对简单，设计灵活。此外受光面无“死区”的效率损失，外观上同质均匀，无刻线，适合BIPV外墙。
附图说明
图1显示为本发明的一种背接触铜铟镓硒太阳电池的制造方法的工艺流程图。
图2～8显示为本发明的一种背接触铜铟镓硒太阳电池的制造方法各步骤所呈现结构示意图，其中，图8显示为一种背接触CdTe太阳电池的结构示意图。
元件标号说明：
100 基板
200 铜铟镓硒光吸收层
300 n型半导体层
400 光刻胶
500 p+重掺杂半导体层
600 绝缘胶
700 金属电极
701 金属电极α
702 金属电极β
具体实施方式
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。
如在详述本发明实施例时，为便于说明，表示器件结构的剖面图会不依一般比例作局部放大，而且所述示意图只是示例，其在此不应限制本发明保护的范围。此外，在实际制作中应包含长度、宽度及深度的三维空间尺寸。
为了方便描述，此处可能使用诸如“之下”、“下方”、“低于”、“下面”、“上方”、“上”等的空间关系词语来描述附图中所示的一个元件或特征与其他元件或特征的关系。将理解到，这些空间关系词语意图包含使用中或操作中的器件的、除了附图中描绘的方向之外的其他方向。此外，当一层被称为在两层“之间”时，它可以是所述两层之间仅有的层，或者也可以存在一个或多个介于其间的层。
在本申请的上下文中，所描述的第一特征在第二特征“之上”的结构可以包括第一和第二特征形成为直接接触的实施例，也可以包括另外的特征形成在第一和第二特征之间的实施例，这样第一和第二特征可能不是直接接触。
参阅图1～8，需要说明的是，本实施例中所提供的图示仅以示意方式说明本发明的基本构想，遂图示中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的型态、数量及比例可为一种随意的改变，且其组件布局型态也可能更为复杂。
本实施例提供一种背接触铜铟镓硒太阳电池的制造方法，步骤流程如图1所示。
一种背接触铜铟镓硒太阳电池的制造方法具体过程如图2～8所示：
如图2所示，提供一个透明衬底100，在透明衬底上形成p型的铜铟镓硒光吸收层200。透明衬底层100可以是超白玻璃基板、钢化玻璃基板及有机玻璃基板中的一种，铜铟镓硒光吸收层200的厚度为1500nm～2500nm，沉积方法可以是共蒸发法或溅射后硒化。
如图3所示，在铜铟镓硒光吸收层200表面设计交替排列的n区域和p+区域，采用掩膜的方式在n区域沉积n型半导体层300。n型半导体层300可以是硫化镉、硫化锌和硫化铟中的一种或多种，所述n型半导体层的厚度为50～200nm。
如图4所示，通过掩膜涂覆在n区域n型半导体层300上覆盖光刻胶400。
如图5所示，在p+区域通过掩膜沉积p+半导体层500，p+半导体层500可以是CuxS、CuxO、NiO层，厚度为50～200nm。
如图6所示，去除光刻胶400。
如图7所示，在特定区域印刷绝缘胶600，得到绝缘图案600分隔开所述n型半导体层400和p+半导体层500。
如图8所示，在n型半导体层300和p+半导体层500上金属化电极700，形成连接n型半导体层区域的金属电极α701和连接p+重掺杂半导体层区域的金属电极β702，金属电极α701和金属电极β702呈插指状排布。形成金属电极700的方式可以是用掩膜溅射或丝网印刷，材质包括Au、Ag、Cu、Mo、Ni。
如图8所示，本实施例还提供一种背接触铜铟镓硒太阳电池结构，至少包括：
透明衬底100以及附着其上的铜铟镓硒光吸收层200；
交替排列的n型半导体层300和p+半导体层500，附着在铜铟镓硒光吸收层200上，所述n型半导体层300和p+半导体层500层通过绝缘图案600分隔开；
金属电极α和金属电极β，分别连接n型半导体层区域的和p+半导体层区域，所述金属电极α和金属电极β呈插指状排布。
金属电极α701连接n型半导体层300区域，金属电极β702连接p+半导体层500，金属电极α701和金属电极β702呈插指状排布。
综上所述，本发明一种背接触铜铟镓硒太阳电池的其制造方法，直接在透明电极上形成光吸收层，实现CIGS受光面位于镀膜基板，并且免除了冗长的激光划线工艺，实现组件化的串并联，工艺相对简单，设计灵活。此外受光面无“死区”的效率损失，外观上同质均匀，无刻线，适合BIPV外墙。所以，本发明有效克服了现有技术中的缺点而具有高度的产业价值。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。

Claims (7)

1.一种背接触铜铟镓硒太阳电池的制造方法，其特征在于，包括步骤：
1)提供一个透明衬底，在透明衬底上形成p型的铜铟镓硒光吸收层；
2)在所述铜铟镓硒光吸收层表面设计交替排列的n区域和p+区域，采用掩膜的方式在所述n区域沉积n型半导体层，并在n型半导体层表面覆盖光刻胶；
3)在所述p+区域通过掩膜沉积p+半导体层；
4)去除光刻胶，在特定区域印刷绝缘胶，得到绝缘图案分隔开所述n型半导体层和p+半导体层；
5)在所述n型半导体层上和p+半导体层上金属化，形成连接n型半导体层区域的金属电极α和连接p+半导体层区域的金属电极β，金属电极α和金属电极β呈插指状排布。
2.根据权利要求1所述的背接触铜铟镓硒太阳电池的制造方法，其特征在于：所述衬底层为超白玻璃基板、钢化玻璃基板及有机玻璃基板中的一种。
3.根据权利要求1所述的背接触铜铟镓硒太阳电池的制造方法，其特征在于：所述铜铟镓硒光吸收层的厚度为1500nm～2500nm，沉积方法包括共蒸发法或溅射后硒化。
4.根据权利要求1所述的背接触铜铟镓硒太阳电池的制造方法，其特征在于：所述n型半导体层包括硫化镉、硫化锌和硫化铟中的一种或多种，所述n型半导体层的厚度为50～200nm。
5.根据权利要求1所述的背接触铜铟镓硒太阳电池的制造方法，其特征在于：所述p+半导体层为CuxS、CuxO、NiO层，厚度为50～200nm。
6.根据权利要求1所述的背接触铜铟镓硒太阳电池的制造方法，其特征在于：所述金属电极α和金属电极β的形成方法为掩膜溅射或丝网印刷，材质包括Au、Ag、Cu、Mo、Ni。
7.一种背接触铜铟镓硒太阳电池，其特征在于：结构包括：
透明衬底；
铜铟镓硒光吸收层，附着在所述透明衬底一侧；
交替排列的n型半导体层和p+半导体层，附着在所述铜铟镓硒光吸收层上，所述n型半导体层和p+半导体层通过绝缘图案分隔开；
金属电极α和金属电极β，分别连接n型半导体层区域的和p+半导体层区域，所述金属电极α和金属电极β呈插指状排布。
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