CN114361268A - 一种背接触CdTe太阳电池及其制造方法 - Google Patents
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- 229910004613 CdTe Inorganic materials 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 71
- 239000002184 metal Substances 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 29
- 230000031700 light absorption Effects 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims abstract description 15
- 230000003213 activating effect Effects 0.000 claims abstract description 5
- 230000004913 activation Effects 0.000 claims abstract description 5
- 238000000137 annealing Methods 0.000 claims abstract description 4
- 238000009413 insulation Methods 0.000 claims abstract description 3
- 239000007864 aqueous solution Substances 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 12
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 10
- 229910007709 ZnTe Inorganic materials 0.000 claims description 7
- 238000001994 activation Methods 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- YKYOUMDCQGMQQO-UHFFFAOYSA-L Cadmium chloride Inorganic materials Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 239000001110 calcium chloride Substances 0.000 claims description 3
- 229910001628 calcium chloride Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L magnesium chloride Substances [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 claims description 3
- 229910001629 magnesium chloride Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000011780 sodium chloride Substances 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 239000005341 toughened glass Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000013084 building-integrated photovoltaic technology Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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Abstract
本发明提供一种背接触CdTe太阳电池及其制造方法，提供一个透明衬底，在透明衬底上形成CdTe光吸收层；采用活化退火工艺对所述CdTe光吸收层进行活化；在CdTe光吸收层表面形成交替排列的n型半导体层和p+重掺杂半导体层，n型半导体层和p+重掺杂半导体层通过绝缘图案分隔开；在n型半导体层和p+重掺杂半导体层上金属化，形成连接n型半导体层区域的金属电极α和连接p+重掺杂半导体层区域的金属电极β，金属电极α和金属电极β呈插指状排布。
Description
技术领域
本发明属于光伏电池技术领域，特别是涉及一种背接触CdTe太阳电池及其制造方法。
背景技术
碲化镉太阳能电池，较单晶硅太阳能电池有制作方便、成本低廉和重量较轻等优点。碲化镉薄膜太阳能电池简称CdTe电池，它是一种以p型CdTe和n型CdSe的异质结为基础的薄膜太阳能电池。一般标准的碲化镉薄膜太阳能电池由五层结构组成：背电极、背接触层、CdTe吸收层、CdTe窗口层、TCO层。碲化镉薄膜太阳能电池的生产成本远远低于晶体硅和其他材料的太阳能电池技术，其次它和太阳光谱很一致，可吸收95％以上的阳光。
在CdTe太阳电池规模工业化生产过程中，需要将整块的多层膜结构切割和金属化，制作背电极形成多电池片串联结构组件，切割采用多次激光刻线加工实现，加工过程冗长，需要配置大量微视传感器，成本很高。此外，激光刻线造成的“死区”不能用于发电，直接影响组件发电效率。因此，针对这些问题进行适应性改善实属必要。
发明内容
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种背接触CdTe太阳电池及其制造方法，用于解决现有技术中CdTe太阳电池组件工艺过程在激光划线工艺复杂冗长，形成“死区”的问题。
为实现上述目的及其他相关目的，本发明提供一种背接触CdTe太阳电池，结构至少包括：
CdTe光吸收层，附着在所述透明衬底一侧；
交替排列的n型半导体层和p+重掺杂半导体层，附着在所述CdTe光吸收层上，所述n型半导体层和p+重掺杂半导体层通过绝缘图案分隔开；
金属电极α和金属电极β，分别连接n型半导体层区域的和p+重掺杂半导体层区域，所述金属电极α和金属电极β呈插指状排布。
可选地，衬底层为超白玻璃基板或钢化玻璃基板。
可选地，CdTe光吸收层厚度为2.0～4.0μm。
可选地，n型半导体层为CdS/CdSe半导体叠层，厚度为50～100nm。
可选地，透明基底和所述CdTe光吸收层之间有一层窗口层，所述窗口层为MgZnO膜层，窗口层的厚度为40～70nm。
本发明还提供一种背接触CdTe太阳电池的制造方法，包括步骤：
1)提供一个透明衬底，在透明衬底上形成CdTe光吸收层；
2)采用活化退火工艺对所述CdTe光吸收层进行活化；
3)在CdTe光吸收层表面形成交替排列的n型半导体层和p+重掺杂半导体层，n型半导体层和p+重掺杂半导体层通过绝缘图案分隔开；
4)在n型半导体层和p+重掺杂半导体层上金属化，形成连接n型半导体层区域的金属电极α和连接p+重掺杂半导体层区域的金属电极β，金属电极α和金属电极β呈插指状排布。
可选地，活化过程为在所述CdTe光吸收层喷涂所活化溶液，350～600℃下退火5～40min；活化溶液包括CdCl2水溶液、CaCl2水溶液、MgCl2水溶液、KCl水溶液、NaCl水溶液中的一种。
可选地，步骤3)的实施方法为，采用掩膜的方式在设计的n区域沉积CdS/CdSe半导体叠层，并在CdS/CdSe半导体叠层表面覆盖光刻胶；再在p+区域通过掩膜向所述CdTe光吸收层进行离子注入As、Sb离子，获得掺杂态CdTe的p+半导体层，溅射掺杂铜的ZnTe；去除光刻胶；在特定区域印刷绝缘胶得到绝缘图案分隔开的交替排列的n型半导体层和p+重掺杂半导体层。
可选地，采用掩膜溅射或丝网印刷的方式形成所述金属电极α和金属电极β，材质包括Au、Ag、Cu、Mo及Ni中的一种。
如上所述，本发明的一种背接触CdTe太阳电池及其制造方法，具有以下有益效果：免除了冗长的激光划线工艺，实现组件化的串并联，工艺相对简单，设计灵活，且受光面无“死区”的效率损失，外观上同质均匀，无刻线，适合BIPV外墙。另外，由于先CdTe光吸收层沉积活化后再进行n型和p+层，避免接触层形成过程中杂质离子进入p-n结造成的效率损失。
附图说明
图1显示为本发明的一种背接触CdTe太阳电池的制造方法的工艺流程图。
图2～9显示为本发明的一种背接触CdTe太阳电池的制造方法各步骤所呈现结构示意图，其中，图9显示为一种背接触CdTe太阳电池的结构示意图。
元件标号说明：
100 基板
200 CdTe光吸收层
300 n型半导体层
400 光刻胶
500 p+重掺杂半导体层
600 ZnTe:Cu接触层
700 绝缘胶
800 金属电极
801 金属电极α
802 金属电极β
S1～S4 步骤
具体实施方式
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。
如在详述本发明实施例时，为便于说明，表示器件结构的剖面图会不依一般比例作局部放大，而且所述示意图只是示例，其在此不应限制本发明保护的范围。此外，在实际制作中应包含长度、宽度及深度的三维空间尺寸。
为了方便描述，此处可能使用诸如“之下”、“下方”、“低于”、“下面”、“上方”、“上”等的空间关系词语来描述附图中所示的一个元件或特征与其他元件或特征的关系。将理解到，这些空间关系词语意图包含使用中或操作中的器件的、除了附图中描绘的方向之外的其他方向。此外，当一层被称为在两层“之间”时，它可以是所述两层之间仅有的层，或者也可以存在一个或多个介于其间的层。
在本申请的上下文中，所描述的第一特征在第二特征“之上”的结构可以包括第一和第二特征形成为直接接触的实施例，也可以包括另外的特征形成在第一和第二特征之间的实施例，这样第一和第二特征可能不是直接接触。
参阅图1～9，需要说明的是，本实施例中所提供的图示仅以示意方式说明本发明的基本构想，遂图示中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的型态、数量及比例可为一种随意的改变，且其组件布局型态也可能更为复杂。
本实施例提供一种背接触CdTe太阳电池的制造方法，步骤流程如图1所示的步骤S1～步骤S4。
具体地，一种背接触CdTe太阳电池的制造方法具体过程如图2～9所示：
如图2所示，提供一个透明衬底100，在透明衬底100上形成CdTe光吸收层200。衬底层100可以是超白玻璃基板或钢化玻璃基板。CdTe光吸收层200厚度为2.0～4.0μm。采用活化退火工艺对所述CdTe光吸收层200进行活化。活化过程为在CdTe光吸收层200喷涂所活化溶液，350～600℃下退火5～40min；活化溶液可以是CdCl2水溶液、CaCl2水溶液、MgCl2水溶液、KCl水溶液、NaCl水溶液中的一种。透明基底100和CdTe光吸收层200之间还可以有一层窗口层，述窗口层为MgZnO膜层，厚度为40～70nm。
如图3所示，采用掩膜的方式在设计的n区域沉积CdS/CdSe半导体叠层300，厚度为50～100nm。
如图4所示，在n区域CdS/CdSe半导体叠层300表面上覆盖光刻胶400。
如图5所示，在p+区域通过掩膜向所述CdTe光吸收层进行离子注入As、Sb离子，在设计的p+区域形成p+半导体层500，获得掺杂态CdTe的p+半导体层500。
如图6所示，溅射掺杂铜的ZnTe，在p+半导体层500上形成ZnTe:Cu接触层600。
如图7所示，去除光刻胶400。
如图8所示，印刷绝缘胶700得到绝缘图案分隔开的交替排列的CdS/CdSe半导体叠层300和p+半导体层500及其上的ZnTe:Cu接触层600
如图9所示，在n型半导体层300和p+半导体层500及其上的ZnTe:Cu接触层600上金属化电极800，形成连接n型半导体层区域的金属电极α801和连接p+重掺杂半导体层区域的金属电极β802，金属电极α801和金属电极β802呈插指状排布。形成金属电极800的方式可以是用掩膜溅射或丝网印刷，材质包括Au、Ag、Cu、Mo及Ni中的一种。
如图9所示，本实施例还提供一种背接触CdTe太阳电池，结构至少包括：
透明衬底100以及附着其上的CdTe光吸收层200；
交替排列的n型半导体层300和p+半导体层500及其上的ZnTe:Cu接触层600，附着在CdTe光吸收层200上，n型半导体层300和p+半导体层500及其上的ZnTe:Cu接触层600通过绝缘图案700分隔开；
金属电极α801连接n型半导体层300区域，金属电极β802连接p+半导体层500及其上的ZnTe:Cu接触层600，金属电极α801和金属电极β802呈插指状排布。
综上所述，本发明一种背接触CdTe太阳电池及其制造方法，免除了冗长的激光划线工艺，实现组件化的串并联，工艺相对简单，设计灵活，且受光面无“死区”的效率损失，外观上同质均匀，无刻线，适合BIPV外墙。另外，由于先CdTe光吸收层沉积活化后再进行n型和p+层，避免接触层形成过程中杂质离子进入p-n结造成的效率损失。所以，本发明有效克服了现有技术中的缺点而具有高度的产业价值。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。
Claims (9)
1.一种背接触CdTe太阳电池，其特征在于，结构至少包括：
透明衬底；
CdTe光吸收层，附着在所述透明衬底一侧；
交替排列的n型半导体层和p+重掺杂半导体层，附着在所述CdTe光吸收层上，所述n型半导体层和p+重掺杂半导体层通过绝缘图案分隔开；
金属电极α和金属电极β，分别连接n型半导体层区域的和p+重掺杂半导体层区域，所述金属电极α和金属电极β呈插指状排布。
2.根据权利要求1所述的背接触CdTe太阳电池，其特征在于：所述透明衬底为超白玻璃基板或钢化玻璃基板。
3.根据权利要求1所述的背接触CdTe太阳电池，其特征在于：所述CdTe光吸收层厚度为2.0～4.0μm。
4.根据权利要求1所述的背接触CdTe太阳电池，其特征在于：所述n型半导体层为CdS/CdSe半导体叠层，厚度为50～100nm。
5.根据权利要求1所述的背接触CdTe太阳电池，其特征在于：所述透明衬底和所述CdTe光吸收层之间有一层窗口层，所述窗口层为MgZnO膜层，窗口层的厚度为40～70nm。
6.一种背接触CdTe太阳电池的制造方法，其特征在于：包括步骤：
1)提供一个透明衬底，在透明衬底上形成CdTe光吸收层；
2)采用活化退火工艺对所述CdTe光吸收层进行活化；
3)在CdTe光吸收层表面形成交替排列的n型半导体层和p+重掺杂半导体层，n型半导体层和p+重掺杂半导体层通过绝缘图案分隔开；
4)在n型半导体层和p+重掺杂半导体层上金属化，形成连接n型半导体层区域的金属电极α和连接p+重掺杂半导体层区域的金属电极β，金属电极α和金属电极β呈插指状排布。
7.根据权利要求6所述的背接触CdTe太阳电池的制造方法，其特征在于：所述活化过程为在所述CdTe光吸收层喷涂所活化溶液，350～600℃下退火5～40min；所述活化溶液包括CdCl2水溶液、CaCl2水溶液、MgCl2水溶液、KCl水溶液、NaCl水溶液中的一种。
8.根据权利要求6所述的背接触CdTe太阳电池的制造方法，其特征在于：所述步骤3)的实施方法为，采用掩膜的方式在设计的n区域沉积CdS/CdSe半导体叠层，并在CdS/CdSe半导体叠层表面覆盖光刻胶；再在p+区域通过掩膜向所述CdTe光吸收层进行离子注入As、Sb离子，获得掺杂态CdTe的p+半导体层，溅射掺杂铜的ZnTe；去除光刻胶；在特定区域印刷绝缘胶得到绝缘图案分隔开的交替排列的n型半导体层和p+重掺杂半导体层。
9.根据权利要求6所述的背接触CdTe太阳电池的制造方法，其特征在于：采用掩膜溅射或丝网印刷的方式形成所述金属电极α和金属电极β，所述金属电极α和金属电极β的材质包括Au、Ag、Cu、Mo及Ni中的一种。
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102891204A (zh) * | 2012-10-17 | 2013-01-23 | 上海太阳能电池研究与发展中心 | 一种下层配置的n-i-p结构的CdTe薄膜太阳能电池 |
| CN104167454A (zh) * | 2013-05-16 | 2014-11-26 | Lg电子株式会社 | 太阳能电池及其制造方法 |
| CN109461782A (zh) * | 2018-12-25 | 2019-03-12 | 浙江晶科能源有限公司 | P型背接触型太阳能电池及其制作方法 |
| CN112768558A (zh) * | 2020-12-31 | 2021-05-07 | 中国建材国际工程集团有限公司 | 一种CdTe薄膜太阳电池活化方法 |
| US20210280735A1 (en) * | 2020-03-03 | 2021-09-09 | The Board Of Trustees Of The University Of Alabama | DIFFUSION BASED EX-SITU GROUP V (P, As, Sb, Bi) DOPING IN POLYCRYSTALLINE CdTe THIN FILM SOLAR CELLS |
| CN113782623A (zh) * | 2021-10-09 | 2021-12-10 | 浙江爱旭太阳能科技有限公司 | 叉指背接触薄膜太阳能电池、电池组件和光伏系统 |
| CN113964244A (zh) * | 2021-12-22 | 2022-01-21 | 成都中建材光电材料有限公司 | 太阳能薄膜电池及其制作方法 |
-
2021
- 2021-12-29 CN CN202111641405.XA patent/CN114361268A/zh active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102891204A (zh) * | 2012-10-17 | 2013-01-23 | 上海太阳能电池研究与发展中心 | 一种下层配置的n-i-p结构的CdTe薄膜太阳能电池 |
| CN104167454A (zh) * | 2013-05-16 | 2014-11-26 | Lg电子株式会社 | 太阳能电池及其制造方法 |
| CN109461782A (zh) * | 2018-12-25 | 2019-03-12 | 浙江晶科能源有限公司 | P型背接触型太阳能电池及其制作方法 |
| US20210280735A1 (en) * | 2020-03-03 | 2021-09-09 | The Board Of Trustees Of The University Of Alabama | DIFFUSION BASED EX-SITU GROUP V (P, As, Sb, Bi) DOPING IN POLYCRYSTALLINE CdTe THIN FILM SOLAR CELLS |
| CN112768558A (zh) * | 2020-12-31 | 2021-05-07 | 中国建材国际工程集团有限公司 | 一种CdTe薄膜太阳电池活化方法 |
| CN113782623A (zh) * | 2021-10-09 | 2021-12-10 | 浙江爱旭太阳能科技有限公司 | 叉指背接触薄膜太阳能电池、电池组件和光伏系统 |
| CN113964244A (zh) * | 2021-12-22 | 2022-01-21 | 成都中建材光电材料有限公司 | 太阳能薄膜电池及其制作方法 |
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