CN114342255A - 一种体声波谐振装置的形成方法 - Google Patents

一种体声波谐振装置的形成方法 Download PDF

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Publication number
CN114342255A
CN114342255A CN201980098505.7A CN201980098505A CN114342255A CN 114342255 A CN114342255 A CN 114342255A CN 201980098505 A CN201980098505 A CN 201980098505A CN 114342255 A CN114342255 A CN 114342255A
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China
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layer
forming
acoustic wave
bulk acoustic
wave resonator
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Pending
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CN201980098505.7A
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English (en)
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刘宇浩
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Changzhou Chengxin Semiconductor Co Ltd
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Changzhou Chengxin Semiconductor Co Ltd
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Publication of CN114342255A publication Critical patent/CN114342255A/zh
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/176—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of ceramic material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

一种体声波谐振装置的形成方法，包括：形成第一层，包括：提供第一基底；形成压电层，位于第一基底上；形成第一电极层，位于压电层上；形成空腔预处理层，位于压电层上，用于形成空腔，空腔预处理层至少覆盖第一电极层的第一端，其中，第一层的第一侧对应第一基底侧，第一层的第二侧对应空腔预处理层侧(S201)；形成第二层，包括：提供第二基底(S203)；连接第一层和第二层，其中，第二层位于第二侧(S205)；去除第一基底，第一侧对应压电层侧(S207)；形成第二电极层，位于第一侧，接触压电层(S209)；以及去除第二层(S213)。如此，压电层不包括明显转向的晶体，从而有助于提高谐振装置的机电耦合系数以及谐振装置的Q值。此外，去除第二基底可以消除其造成的电学损耗。

Description

PCT国内申请，说明书已公开。

Claims (43)

  1. PCT国内申请，权利要求书已公开。
CN201980098505.7A 2019-09-05 2019-09-05 一种体声波谐振装置的形成方法 Pending CN114342255A (zh)

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PCT/CN2019/104602 WO2021042345A1 (zh) 2019-09-05 2019-09-05 一种体声波谐振装置的形成方法

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EP (1) EP4027516A4 (zh)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024061071A1 (zh) * 2022-09-19 2024-03-28 常州承芯半导体有限公司 体声波谐振装置及其形成方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113824422A (zh) * 2021-09-08 2021-12-21 常州承芯半导体有限公司 体声波谐振装置、滤波装置及射频前端装置

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JPH0964675A (ja) * 1995-08-17 1997-03-07 Motorola Inc 密閉空洞上の圧電共振器および製造方法
CN1614876A (zh) * 2003-11-07 2005-05-11 松下电器产业株式会社 压电谐振器，及其制造方法，滤波器，双工器和通讯器件
US20110121915A1 (en) * 2009-11-23 2011-05-26 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Passivation layers in acoustic resonators
US20120073099A1 (en) * 2009-06-09 2012-03-29 Murata Manufacturing Co., Ltd. Method for manufacturing piezoelectric device
GB201216376D0 (en) * 2011-09-14 2012-10-31 Avago Technologies Wireless Ip Double film bulk acoustic resonator having electrode edge alignments providing improved quality factor or electrochemical coupling coefficient
JP2015119219A (ja) * 2013-12-16 2015-06-25 日本碍子株式会社 複合基板及びその製法
US20160182008A1 (en) * 2014-12-17 2016-06-23 Rf Micro Devices, Inc. Multi-frequency guided wave devices and fabrication methods
CN106489238A (zh) * 2014-08-05 2017-03-08 株式会社村田制作所 压电谐振器的制造方法及压电谐振器
CN107947750A (zh) * 2017-11-22 2018-04-20 周燕红 一种压电谐振器的制备方法及压电谐振器
US20180234075A1 (en) * 2017-02-14 2018-08-16 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic wave resonator
CN108667437A (zh) * 2018-04-19 2018-10-16 中芯集成电路（宁波）有限公司 一种薄膜体声波谐振器及其制造方法和电子装置
CN109150135A (zh) * 2018-11-13 2019-01-04 杭州左蓝微电子技术有限公司 基于键合的薄膜体声波谐振器及其加工方法
CN109831172A (zh) * 2018-12-20 2019-05-31 苏州敏芯微电子技术股份有限公司 一种体声波谐振器的制备方法
CN110011631A (zh) * 2019-03-13 2019-07-12 电子科技大学 具有应力缓冲层的空腔型体声波谐振器及其制备方法

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* Cited by examiner, † Cited by third party
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CN107222181A (zh) * 2016-12-29 2017-09-29 杭州左蓝微电子技术有限公司 基于soi基片的薄膜体声波谐振器及其制备方法

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0964675A (ja) * 1995-08-17 1997-03-07 Motorola Inc 密閉空洞上の圧電共振器および製造方法
CN1614876A (zh) * 2003-11-07 2005-05-11 松下电器产业株式会社 压电谐振器，及其制造方法，滤波器，双工器和通讯器件
US20120073099A1 (en) * 2009-06-09 2012-03-29 Murata Manufacturing Co., Ltd. Method for manufacturing piezoelectric device
US20110121915A1 (en) * 2009-11-23 2011-05-26 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Passivation layers in acoustic resonators
GB201216376D0 (en) * 2011-09-14 2012-10-31 Avago Technologies Wireless Ip Double film bulk acoustic resonator having electrode edge alignments providing improved quality factor or electrochemical coupling coefficient
JP2015119219A (ja) * 2013-12-16 2015-06-25 日本碍子株式会社 複合基板及びその製法
CN106489238A (zh) * 2014-08-05 2017-03-08 株式会社村田制作所 压电谐振器的制造方法及压电谐振器
US20160182008A1 (en) * 2014-12-17 2016-06-23 Rf Micro Devices, Inc. Multi-frequency guided wave devices and fabrication methods
US20180234075A1 (en) * 2017-02-14 2018-08-16 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic wave resonator
CN107947750A (zh) * 2017-11-22 2018-04-20 周燕红 一种压电谐振器的制备方法及压电谐振器
CN108667437A (zh) * 2018-04-19 2018-10-16 中芯集成电路（宁波）有限公司 一种薄膜体声波谐振器及其制造方法和电子装置
CN109150135A (zh) * 2018-11-13 2019-01-04 杭州左蓝微电子技术有限公司 基于键合的薄膜体声波谐振器及其加工方法
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CN110011631A (zh) * 2019-03-13 2019-07-12 电子科技大学 具有应力缓冲层的空腔型体声波谐振器及其制备方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024061071A1 (zh) * 2022-09-19 2024-03-28 常州承芯半导体有限公司 体声波谐振装置及其形成方法

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WO2021042345A1 (zh) 2021-03-11
EP4027516A1 (en) 2022-07-13

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