WO2023036026A1 - 体声波谐振装置、滤波装置及射频前端装置 - Google Patents

体声波谐振装置、滤波装置及射频前端装置 Download PDF

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Publication number
WO2023036026A1
WO2023036026A1 PCT/CN2022/116064 CN2022116064W WO2023036026A1 WO 2023036026 A1 WO2023036026 A1 WO 2023036026A1 CN 2022116064 W CN2022116064 W CN 2022116064W WO 2023036026 A1 WO2023036026 A1 WO 2023036026A1
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layer
edge
electrode layer
acoustic wave
axis
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PCT/CN2022/116064
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English (en)
French (fr)
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韩兴
周建
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常州承芯半导体有限公司
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Publication of WO2023036026A1 publication Critical patent/WO2023036026A1/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02047—Treatment of substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • H03H9/58—Multiple crystal filters

Definitions

  • the present invention relates to the technical field of semiconductors, in particular, the present invention relates to a bulk acoustic wave resonance device, a filter device and a radio frequency front-end device.
  • Radio Frequency (RF) front-end chips of wireless communication equipment include power amplifiers, antenna switches, RF filters, multiplexers, and low-noise amplifiers.
  • radio frequency filters include piezoelectric surface acoustic wave (Surface Acoustic Wave, SAW) filter, piezoelectric bulk acoustic wave (Bulk Acoustic Wave, BAW) filter, micro-electro-mechanical system (Micro-Electro-Mechanical System, MEMS) filter , Integrated Passive Devices (IPD) filters, etc.
  • the quality factor value (Q value) of the SAW resonator and the BAW resonator is relatively high, and the RF filter with low insertion loss and high out-of-band rejection is made of the SAW resonator and the BAW resonator, that is, the SAW filter and the BAW filter. It is the mainstream RF filter used in wireless communication equipment such as mobile phones and base stations.
  • the Q value is the quality factor value of the resonator, which is defined as the center frequency divided by the 3dB bandwidth of the resonator.
  • the use frequency of SAW filter is generally 0.4GHz to 2.7GHz, and the use frequency of BAW filter is generally 0.7GHz to 7GHz.
  • the performance of the BAW resonator is better, but due to the complicated process steps, the manufacturing cost of the BAW resonator is higher than that of the SAW resonator.
  • more and more frequency bands are used.
  • technologies such as carrier aggregation and other frequency band superposition
  • High-performance BAW technology can solve the problem of mutual interference between frequency bands.
  • wireless mobile networks have introduced higher communication frequency bands.
  • BAW technology can solve the filtering problem in high frequency bands.
  • Fig. 1 shows a BAW filter circuit 100, which includes a ladder circuit composed of multiple BAW resonators, where f1, f2, f3 and f4 represent four different frequencies respectively.
  • metal electrodes on both sides of the piezoelectric layer of the resonator generate alternating positive and negative voltages, and the piezoelectric layer generates sound waves through alternating positive and negative voltages, and the sound waves in the resonator propagate in a direction perpendicular to the piezoelectric layer.
  • the sound wave needs to be totally reflected on the upper surface of the upper metal electrode and the lower surface of the lower metal electrode to form a standing acoustic wave.
  • the condition of sound wave reflection is that the acoustic impedance of the contact area with the upper surface of the upper metal electrode and the lower surface of the lower metal electrode is quite different from the acoustic impedance of the metal electrode.
  • FBAR Film Bulk Acoustic wave Resonator
  • FBAR Film Bulk Acoustic wave Resonator
  • the resonator's resonant region is above air or vacuum, and there is a cavity below it.
  • the acoustic impedance of air and vacuum is quite different from that of the metal electrode, and the sound wave can be totally reflected on the upper surface of the upper metal electrode and the lower surface of the lower metal electrode to form a standing wave.
  • FIG. 2 shows a schematic structural diagram of a section A of an FBAR 200.
  • the FBAR 200 includes: a substrate 201, the substrate 201 includes a cavity 203; an electrode layer 205 (that is, a lower electrode layer), located on the substrate 201 and the cavity 203, covering the cavity 203; An electrical layer 207, located on the substrate 201, covering the electrode layer 205, the piezoelectric layer 207 including a raised portion 207a, located above the electrode layer 205; and an electrode layer 209 (ie, an upper electrode layer), Located on the piezoelectric layer 207, the electrode layer 209 includes a raised portion 209a, located on the raised portion 207a, wherein, outside the resonant region 211, there is an electrode layer 205 and the electrode layer 209 between
  • the fringe capacitance (fringe capacitance) 213 causes sound energy loss, thereby reducing the electro-mechanical coupling factor (electro-mechanical coupling factor) and Q value of the reson
  • the problem solved by the present invention is to provide a bulk acoustic wave resonance device, which can reduce the edge capacitance, increase the electromechanical coupling coefficient and block leakage waves, and increase the Q value.
  • an embodiment of the present invention provides a bulk acoustic wave resonator device, comprising: a first layer, the first layer includes a cavity; a first electrode layer, at least one end of the first electrode layer is located in the cavity In the cavity; the piezoelectric layer is located on the first electrode layer and covers the cavity, the piezoelectric layer includes a first side and a second side vertically opposite to the first side, the second side An electrode layer is located on the first side; a second electrode layer is located on the second side and is located on the piezoelectric layer, and the overlapping part of the second electrode layer and the first electrode layer is located on the Above the cavity, corresponding to the cavity; and a first composite structure, located on the first side, contacting the piezoelectric layer, adjacent to the first electrode layer in the horizontal direction, the first composite structure The first end close to the first electrode layer is located in the cavity, and the first composite structure is embedded in the first composite structure at a horizontally opposite second end away from the first end of the
  • the material of the first edge extension layer includes metal.
  • the medium of the first support layer includes, but is not limited to, one of the following: non-metallic materials, air, and vacuum.
  • the first electrode layer is polygonal, and the first composite structure is adjacent to at least one side of the first electrode layer.
  • the bulk acoustic wave resonator device further includes: a first edge structure located on the first side and contacting the piezoelectric layer, the first edge structure includes a third side and the third side On the opposite fourth side in the horizontal direction, the first electrode layer is located on the third side, and the first composite structure is located on the fourth side.
  • the first edge structure at least partially surrounds the first electrode layer.
  • the first electrode layer is located inside the first edge structure, and the first composite structure is located outside the first edge structure.
  • the inner side refers to a side pointing toward the central axis of the BAW resonator device, and the outer side is horizontally opposite to the inner side.
  • the first edge structure includes a first edge wrapping layer, the material of the first edge wrapping layer includes metal, and the first edge wrapping layer is connected to the first electrode layer, so The first edge surrounding layer is also connected to the first edge extension layer.
  • the first edge structure further includes a first edge support layer contacting the piezoelectric layer, the first edge support layer is located between the piezoelectric layer and the first edge surrounding layer The interval is used to reduce the resonant frequency of the spurious resonant generated by introducing the first edge surrounding layer.
  • the medium of the first edge support layer includes one of the following: non-metallic material, air, and vacuum.
  • the first edge structure and the second electrode layer have a first overlapping portion.
  • the first composite structure and the second electrode layer have a second overlapping portion, and the width of the second overlapping portion is equal to the width of the first edge structure.
  • the first edge structure is polygonal, and the first composite structure is adjacent to at least one side of the first edge structure.
  • the first composite structure further includes a first edge portion, the first edge portion includes a fifth side and a sixth side horizontally opposite to the fifth side, and the first electrode layer Located on the fifth side, the first edge extension layer and the first supporting layer are located on the sixth side.
  • the thickness of the first edge portion is equal to the sum of the thicknesses of the first edge extension layer and the first support layer.
  • the first edge portion at least partially surrounds the first electrode layer.
  • the first electrode layer is located inside the first edge portion, and the first edge extension layer and the first support layer are located outside the first edge portion.
  • the first edge portion and the second electrode layer have a third overlapping portion.
  • the first edge extension layer and the first support layer and the second electrode layer have a fourth overlapping portion, and the width of the fourth overlapping portion is equal to the width of the first edge portion .
  • the first edge portion is polygonal, and the first edge extension layer and the first supporting layer are adjacent to at least one side of the first edge portion.
  • the composite structure is electrically connected to the first electrode layer or the edge structure of the first electrode, the composite structure includes an edge extension layer and a composite support layer, and the composite support layer thickens the edge extension layer and the first electrode.
  • the thickness of the medium between the two electrode layers reduces the edge capacitance, improves the electromechanical coupling coefficient and blocks leakage waves, and improves the Q value.
  • An embodiment of the present invention also provides a bulk acoustic wave resonance device, including: a first layer, the first layer including a cavity; a first electrode layer, at least one end of the first electrode layer is located in the cavity; An electrical layer, located on the first electrode layer, covering the cavity, the piezoelectric layer includes a first side and a second side vertically opposite to the first side, the first electrode layer is located on The first side; the second electrode layer is located on the second side and on the piezoelectric layer, and the overlapping part of the second electrode layer and the first electrode layer is located above the cavity , corresponding to the cavity; and a second composite structure, located on the second side, in contact with the piezoelectric layer, adjacent to the second electrode layer in the horizontal direction, the second composite structure and the first composite structure
  • One electrode layer has no overlapping portion or partially overlaps, the second composite structure includes a second edge extension layer and a second support layer, and the second support layer is located between the piezoelectric layer and the second edge extension layer , used to reduce
  • the material of the second edge extension layer includes metal.
  • the medium of the second support layer includes one of the following: non-metallic material, air, and vacuum.
  • the second electrode layer is polygonal, and the second composite structure is adjacent to at least one side of the second electrode layer.
  • the bulk acoustic wave resonator device further includes: a second edge structure located on the second side and contacting the piezoelectric layer, the second edge structure includes a third side and the third side On the opposite fourth side in the horizontal direction, the second electrode layer is located on the third side, and the second composite structure is located on the fourth side.
  • the second edge structure at least partially surrounds the second electrode layer.
  • the second electrode layer is located inside the second edge structure, and the second composite structure is located outside the second edge structure.
  • the second edge structure includes a second edge wrapping layer, the material of the second edge wrapping layer includes metal, and the second edge wrapping layer is connected to the second electrode layer, so The second edge surrounding layer is also connected to the second edge extension layer.
  • the second edge structure further includes a second edge support layer in contact with the piezoelectric layer, the second edge support layer is located between the piezoelectric layer and the second edge surrounding layer The interval is used to reduce the resonant frequency of the spurious resonant generated by introducing the second edge surrounding layer.
  • the medium of the second edge support layer includes one of the following: non-metallic material, air, and vacuum.
  • the second edge structure and the first electrode layer have a first overlapping portion.
  • the second composite structure and the first electrode layer have a second overlapping portion, and the width of the second overlapping portion is equal to the width of the second edge structure.
  • the second edge structure is polygonal, and the second composite structure is adjacent to at least one side of the second edge structure.
  • the second composite structure further includes a second edge portion, the second edge portion includes a fifth side and a sixth side horizontally opposite to the fifth side, and the second electrode layer Located on the fifth side, the second edge extension layer and the second supporting layer are located on the sixth side.
  • the thickness of the second edge portion is equal to the sum of the thicknesses of the second edge extension layer and the second support layer.
  • the second edge portion at least partially surrounds the second electrode layer.
  • the second electrode layer is located inside the second edge portion, and the second edge extension layer and the second supporting layer are located outside the second edge portion.
  • the second edge portion and the first electrode layer have a third overlapping portion.
  • the second edge extension layer and the second support layer and the first electrode layer have a fourth overlapping portion, and the width of the fourth overlapping portion is equal to the width of the second edge portion .
  • the second edge portion is polygonal, and the second edge extension layer and the second supporting layer are adjacent to at least one side of the second edge portion.
  • the composite structure is electrically connected to the second electrode layer or the edge structure corresponding to the second electrode layer, the composite structure includes an edge extension layer and a composite support layer, and the composite support layer thickens the edge extension layer.
  • the dielectric thickness between the first electrode layer and the first electrode layer can reduce the edge capacitance, improve the electromechanical coupling coefficient and block the leakage wave, and improve the Q value.
  • the first layer includes: an intermediate layer including the cavity, wherein the material of the intermediate layer includes but not limited to at least one of the following: polymer, insulating dielectric, polysilicon .
  • An embodiment of the present invention also provides a filtering device, including but not limited to: at least one bulk acoustic wave resonance device provided in one of the above-mentioned embodiments.
  • An embodiment of the present invention also provides a radio frequency front-end device, including but not limited to: a power amplifying device and at least one filtering device provided in the above-mentioned embodiments; the power amplifying device is connected to the filtering device.
  • An embodiment of the present invention also provides a radio frequency front-end device, including but not limited to: a low-noise amplification device and at least one filtering device provided in the above-mentioned embodiments; the low-noise amplification device is connected to the filtering device.
  • An embodiment of the present invention also provides a radio frequency front-end device, including but not limited to: a multiplexing device, where the multiplexing device includes at least one filtering device provided in the foregoing embodiments.
  • FIG. 1 is a schematic structural diagram of a BAW filter circuit 100
  • Fig. 2 is a schematic diagram of the section A structure of a FBAR 200
  • Fig. 3a is a schematic structural diagram of section A of a bulk acoustic wave resonator device 300 according to an embodiment of the present invention
  • Fig. 3b is a schematic diagram of acoustic impedance of a bulk acoustic wave resonance device 300 according to an embodiment of the present invention
  • Fig. 3c is a performance schematic diagram of a bulk acoustic wave resonance device 300 according to an embodiment of the present invention.
  • Figure 3d is a schematic diagram of the structure of a hexagonal crystal grain
  • Figure 3e(i) is a schematic structural diagram of an orthorhombic grain
  • Fig. 3e (ii) is a structural schematic diagram of a tetragonal crystal grain
  • Fig. 3e (iii) is a structural schematic diagram of a cubic crystal grain
  • Fig. 3f is a schematic top view of a bulk acoustic wave resonance device 300 according to an embodiment of the present invention.
  • Fig. 4a is a schematic structural diagram of section A of a bulk acoustic wave resonance device 400 according to an embodiment of the present invention
  • Fig. 4b is a schematic top view of a bulk acoustic wave resonance device 400 according to an embodiment of the present invention.
  • Fig. 5a is a schematic structural diagram of section A of a bulk acoustic wave resonator device 500 according to an embodiment of the present invention
  • Fig. 5b is a schematic top view of a bulk acoustic wave resonance device 500 according to an embodiment of the present invention.
  • Fig. 6a is a schematic structural diagram of section A of a bulk acoustic wave resonance device 600 according to an embodiment of the present invention
  • Fig. 6b is a schematic diagram of acoustic impedance of a bulk acoustic wave resonance device 600 according to an embodiment of the present invention.
  • Fig. 6c is a schematic top view of a bulk acoustic wave resonance device 600 according to an embodiment of the present invention.
  • Fig. 7a is a schematic structural diagram of section A of a bulk acoustic wave resonance device 700 according to an embodiment of the present invention
  • Fig. 7b is a schematic top view of a bulk acoustic wave resonance device 700 according to an embodiment of the present invention.
  • Fig. 8a is a schematic structural diagram of section A of a bulk acoustic wave resonance device 800 according to an embodiment of the present invention.
  • Fig. 8b is a schematic top view of a bulk acoustic wave resonance device 800 according to an embodiment of the present invention.
  • Fig. 9a is a schematic structural diagram of section A of a bulk acoustic wave resonance device 900 according to an embodiment of the present invention.
  • Fig. 9b is a schematic top view of a bulk acoustic wave resonance device 900 according to an embodiment of the present invention.
  • Fig. 10a is a schematic structural diagram of section A of a bulk acoustic wave resonator device 1000 according to an embodiment of the present invention.
  • Fig. 10b is a schematic top view of a bulk acoustic wave resonance device 1000 according to an embodiment of the present invention.
  • Fig. 11a is a schematic structural diagram of section A of a bulk acoustic wave resonator device 1100 according to an embodiment of the present invention
  • Fig. 11b is a schematic top view of a bulk acoustic wave resonance device 1100 according to an embodiment of the present invention.
  • Fig. 12a is a schematic structural diagram of section A of a bulk acoustic wave resonator device 1200 according to an embodiment of the present invention
  • Fig. 12b is a schematic top view of a bulk acoustic wave resonance device 1200 according to an embodiment of the present invention.
  • Fig. 13a is a schematic structural diagram of section A of a bulk acoustic wave resonator device 1300 according to an embodiment of the present invention
  • Fig. 13b is a schematic top view of a bulk acoustic wave resonance device 1300 according to an embodiment of the present invention.
  • Fig. 14a is a schematic structural diagram of a section A of a bulk acoustic wave resonator device 1400 according to an embodiment of the present invention
  • Fig. 14b is a schematic top view of a bulk acoustic wave resonance device 1400 according to an embodiment of the present invention.
  • FIG. 15 is a schematic structural diagram of a wireless communication device 1500 .
  • a BAW resonator device comprising a composite structure electrically connected to the first electrode layer or an edge structure of said first electrode
  • said composite structure includes an edge extension layer and a composite support layer, said composite support layer plus The thickness of the medium between the edge extension layer and the second electrode layer is thickened, so as to reduce the edge capacitance, increase the electromechanical coupling coefficient and block leakage waves, and improve the Q value.
  • the edge structure and composite structure can form a reflection structure, which is located outside the electrode layer, so as to reflect the sound wave in the resonance area, block the leakage wave, and improve the Q value.
  • An embodiment of the present invention provides a bulk acoustic wave resonance device, comprising: a first layer, the first layer including a cavity; a first electrode layer, at least one end of the first electrode layer is located in the cavity; a piezoelectric Layer, located on the first electrode layer, covering the cavity, the piezoelectric layer includes a first side and a second side vertically opposite to the first side, the first electrode layer is located on the the first side; the second electrode layer is located on the second side and on the piezoelectric layer, and the overlapping part of the second electrode layer and the first electrode layer is located above the cavity, Corresponding to the cavity; and a first composite structure, located on the first side, contacting the piezoelectric layer, adjacent to the first electrode layer in the horizontal direction, the first composite structure is close to the first The first end of the electrode layer is located in the cavity, the first composite structure is embedded in the first layer at a second end opposite to the first end in the horizontal direction away from the first end of the first electrode layer, and the first composite structure is
  • the material of the first edge extension layer includes metal.
  • the medium of the first support layer includes, but is not limited to, one of the following: non-metallic materials, air, and vacuum.
  • the first electrode layer is polygonal, and the first composite structure is adjacent to at least one side of the first electrode layer.
  • the bulk acoustic wave resonator device further includes: a first edge structure located on the first side and contacting the piezoelectric layer, the first edge structure includes a third side and the third side On the opposite fourth side in the horizontal direction, the first electrode layer is located on the third side, and the first composite structure is located on the fourth side.
  • the first edge structure at least partially surrounds the first electrode layer.
  • the first electrode layer is located inside the first edge structure, and the first composite structure is located outside the first edge structure.
  • the inner side refers to a side pointing toward the central axis of the BAW resonator device, and the outer side is opposite to the inner side.
  • the first edge structure includes a first edge wrapping layer, the material of the first edge wrapping layer includes metal, and the first edge wrapping layer is connected to the first electrode layer, so The first edge surrounding layer is also connected to the first edge extension layer.
  • the first edge structure further includes a first edge support layer contacting the piezoelectric layer, the first edge support layer is located between the piezoelectric layer and the first edge surrounding layer between. It should be noted that the edge support layer can reduce the resonant frequency of the spurious resonance generated by the edge surrounding layer, and move the spurious resonance out of the main resonance region.
  • the medium of the first edge support layer includes one of the following: non-metallic material, air, and vacuum.
  • the first edge structure and the second electrode layer have a first overlapping portion.
  • the first composite structure and the second electrode layer have a second overlapping portion, and the width of the second overlapping portion is equal to the width of the first edge structure.
  • the first edge structure is polygonal, and the first composite structure is adjacent to at least one side of the first edge structure.
  • the first composite structure further includes a first edge portion, the first edge portion includes a fifth side and a sixth side horizontally opposite to the fifth side, and the first electrode layer Located on the fifth side, the first edge extension layer and the first supporting layer are located on the sixth side.
  • the thickness of the first edge portion is equal to the sum of the thicknesses of the first edge extension layer and the first supporting layer.
  • the first edge portion at least partially surrounds the first electrode layer.
  • the first electrode layer is located inside the first edge portion, and the first edge extension layer and the first support layer are located outside the first edge portion.
  • the first edge portion and the second electrode layer have a third overlapping portion.
  • the first edge extension layer and the first support layer and the second electrode layer have a fourth overlapping portion, and the width of the fourth overlapping portion is equal to the width of the first edge portion .
  • the first edge portion is polygonal, and the first edge extension layer and the first supporting layer are adjacent to at least one side of the first edge portion.
  • the composite structure is electrically connected to the first electrode layer or the edge structure corresponding to the first electrode layer, the composite structure includes an edge extension layer and a composite support layer, and the composite support layer thickens the edge extension layer.
  • the dielectric thickness between the second electrode layer and the second electrode layer can reduce the edge capacitance, improve the electromechanical coupling coefficient and block the leakage wave, and improve the Q value.
  • An embodiment of the present invention also provides a bulk acoustic wave resonance device, including: a first layer, the first layer including a cavity; a first electrode layer, at least one end of the first electrode layer is located in the cavity; An electrical layer, located on the first electrode layer, covering the cavity, the piezoelectric layer includes a first side and a second side vertically opposite to the first side, the first electrode layer is located on The first side; the second electrode layer is located on the second side and on the piezoelectric layer, and the overlapping part of the second electrode layer and the first electrode layer is located above the cavity , corresponding to the cavity; and a second composite structure, located on the second side, in contact with the piezoelectric layer, adjacent to the second electrode layer in the horizontal direction, the second composite structure and the first composite structure
  • One electrode layer has no overlapping portion or partially overlaps, the second composite structure includes a second edge extension layer and a second support layer, and the second support layer is located between the piezoelectric layer and the second edge extension layer , used to reduce
  • the material of the second edge extension layer includes metal.
  • the medium of the second support layer includes one of the following: non-metallic material, air, and vacuum.
  • the second electrode layer is polygonal, and the second composite structure is adjacent to at least one side of the second electrode layer.
  • the bulk acoustic wave resonator device further includes: a second edge structure located on the second side and contacting the piezoelectric layer, the second edge structure includes a third side and the third side On the opposite fourth side in the horizontal direction, the second electrode layer is located on the third side, and the second composite structure is located on the fourth side.
  • the second edge structure at least partially surrounds the second electrode layer.
  • the second electrode layer is located inside the second edge structure, and the second composite structure is located outside the second edge structure.
  • the second edge structure includes a second edge wrapping layer, the material of the second edge wrapping layer includes metal, and the second edge wrapping layer is connected to the second electrode layer, so The second edge surrounding layer is also connected to the second edge extension layer.
  • the second edge structure further includes a second edge support layer in contact with the piezoelectric layer, the second edge support layer is located between the piezoelectric layer and the second edge surrounding layer between. It should be noted that the edge support layer can reduce the resonant frequency of the spurious resonance generated by the edge surrounding layer, and move the spurious resonance out of the main resonance region.
  • the medium of the second edge support layer includes one of the following: non-metallic material, air, and vacuum.
  • the second edge structure and the first electrode layer have a first overlapping portion.
  • the second composite structure and the first electrode layer have a second overlapping portion, and the width of the second overlapping portion is equal to the width of the second edge structure.
  • the second edge structure is polygonal, and the second composite structure is adjacent to at least one side of the second edge structure.
  • the second composite structure further includes a second edge portion, the second edge portion includes a fifth side and a sixth side horizontally opposite to the fifth side, and the second electrode layer Located on the fifth side, the second edge extension layer and the second supporting layer are located on the sixth side.
  • the thickness of the second edge portion is equal to the sum of the thicknesses of the second edge extension layer and the second support layer.
  • the second edge portion at least partially surrounds the second electrode layer.
  • the second electrode layer is located inside the second edge portion, and the second edge extension layer and the second supporting layer are located outside the second edge portion.
  • the second edge portion and the first electrode layer have a third overlapping portion.
  • the second edge extension layer and the second support layer and the first electrode layer have a fourth overlapping portion, and the width of the fourth overlapping portion is equal to the width of the second edge portion .
  • the second edge portion is polygonal, and the second edge extension layer and the second supporting layer are adjacent to at least one side of the second edge portion.
  • the composite structure is electrically connected to the second electrode layer or the edge structure corresponding to the second electrode layer, the composite structure includes an edge extension layer and a composite support layer, and the composite support layer thickens the edge extension layer.
  • the dielectric thickness between the first electrode layer and the first electrode layer can reduce the edge capacitance, improve the electromechanical coupling coefficient and block the leakage wave, and improve the Q value.
  • the first layer includes: an intermediate layer including the cavity, wherein the material of the intermediate layer includes but not limited to at least one of the following: polymer, insulating dielectric, polysilicon .
  • An embodiment of the present invention also provides a filtering device, including but not limited to: at least one bulk acoustic wave resonance device provided in one of the above-mentioned embodiments.
  • An embodiment of the present invention also provides a radio frequency front-end device, including but not limited to: a power amplifying device and at least one filtering device provided in the above-mentioned embodiments; the power amplifying device is connected to the filtering device.
  • An embodiment of the present invention also provides a radio frequency front-end device, including but not limited to: a low-noise amplification device and at least one filtering device provided in the above-mentioned embodiments; the low-noise amplification device is connected to the filtering device.
  • An embodiment of the present invention also provides a radio frequency front-end device, including but not limited to: a multiplexing device, where the multiplexing device includes at least one filtering device provided in the foregoing embodiments.
  • Fig. 3 to Fig. 14 have shown a plurality of specific embodiments of the present invention, and described multiple specific embodiments adopt the resonance device of different structure, but the present invention can also be implemented in other ways different from those described here, therefore The present invention is not limited by the specific examples disclosed below.
  • Fig. 3a is a schematic structural diagram of section A of a BAW resonator device 300 according to an embodiment of the present invention.
  • an embodiment of the present invention provides a bulk acoustic wave resonator device 300 comprising: a substrate 310; an intermediate layer 320 located on the substrate 310, and the upper surface side of the intermediate layer 320 includes a cavity 330 and a groove 331, wherein, the groove 331 is located on one side of the cavity 330 and communicates with the cavity 330, the depth of the groove 331 is smaller than the depth of the cavity 330; the electrode layer 340, the electrode The first end 341 of the layer 340 is located in the cavity 330, and the second end 343 of the electrode layer 340 is located in the groove 331, wherein the depth of the groove 331 is equal to the thickness of the electrode layer 340
  • the piezoelectric layer 350 is located on the electrode layer 340 and the intermediate layer 320, covering the cavity 330, wherein the piezoelectric layer 350 includes a first side 351 and a second side opposite to the first side 351 Two sides 353, the electrode layer 340 and the intermediate layer 320 are
  • the second side 353 is located on the piezoelectric layer 350 and connected to the electrode layer 360
  • the composite structure 370 includes an edge extension layer 371 located on the second side 353 and above the piezoelectric layer 350 , electrically connected to the electrode layer 360, and the composite support layer 373, located on the second side 353, located on the piezoelectric layer 350, located between the piezoelectric layer 350 and the edge extension layer 371, connected
  • the electrode layer 360 , the composite support layer 373 overlap with the edge extension layer 371 .
  • the composite support layer 373 thickens the medium between the electrode layer 340 and the edge extension layer 371, thereby reducing the edge capacitance 380 and improving the electromechanical coupling coefficient of the resonator device, wherein the increase The electromechanical coupling coefficient can increase the passband bandwidth of the filtering device corresponding to the resonance device.
  • the acoustic impedance difference between the area C where the composite structure 370 is located and the area E where the electrode layer 360 is located is larger than that of the case where there is no composite structure, so that the edge lateral direction can be improved.
  • the reflectivity of sound waves increases the Q value.
  • the admittance curve 390 represents the normalized admittance value of the first BAW resonator device without the composite structure
  • the admittance curve 391 represents the The normalized admittance value of the second BAW resonant device, the bandwidth between the resonance and the anti-resonance of the admittance curve 391 is greater than the bandwidth between the resonance and the anti-resonance of the admittance curve 390; see Fig. 3c(ii )
  • the quality factor curve 393 represents the normalized Q value of the first BAW resonator device
  • the quality factor curve 395 represents the normalized Q value of the second BAW resonator device.
  • Fig. 3c is only a schematic diagram for more intuitive understanding of the beneficial effects of the embodiments of the present invention, but is not equivalent to the actual performance of the BAW resonator device of the embodiments of the present invention.
  • the material of the substrate 310 includes but is not limited to at least one of the following: silicon, silicon carbide, glass, gallium arsenide, gallium nitride, and ceramics.
  • the material of the intermediate layer 320 includes but is not limited to at least one of the following: polymer, insulating dielectric, and polysilicon.
  • the polymer includes but is not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), and polyimide.
  • the insulating dielectric includes but is not limited to at least one of the following: aluminum nitride, silicon dioxide, silicon nitride, and titanium oxide.
  • the material of the electrode layer 340 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the piezoelectric layer 350 is a flat layer and also covers the upper surface side of the middle layer 320 .
  • the material of the piezoelectric layer 350 includes but is not limited to at least one of the following: aluminum nitride, aluminum alloy nitride, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate , Lead magnesium niobate - lead titanate.
  • the piezoelectric layer 350 includes a plurality of crystal grains, and the multiple crystal grains include a first crystal grain and a second crystal grain, wherein the first crystal grain and the second crystal grain are any two of the plurality of crystal grains.
  • crystal orientations, crystal planes, etc. of crystal grains can be represented based on a coordinate system. As shown in FIG. 3 d , for hexagonal crystal grains, such as aluminum nitride grains, the ac three-dimensional coordinate system (including a-axis and c-axis) is used to represent.
  • crystal grains are represented by the xyz three-dimensional coordinate system (including x-axis, y-axis and z-axis). In addition to the above two examples, the crystal grains can also be expressed based on other coordinate systems known to those skilled in the art, so the present invention is not limited by the above two examples.
  • the first grain can be expressed based on a first three-dimensional coordinate system
  • the second grain can be expressed based on a second three-dimensional coordinate system
  • the first three-dimensional coordinate system includes at least The first coordinate axis and the third coordinate axis along the third direction
  • the second three-dimensional coordinate system includes at least the second coordinate axis along the second direction and the fourth coordinate axis along the fourth direction
  • the first The coordinate axis corresponds to the height of the first crystal grain
  • the second coordinate axis corresponds to the height of the second crystal grain.
  • the first direction is the same as or opposite to the second direction. It should be noted that the first direction and the second direction being the same means: the angle between the vector along the first direction and the vector along the second direction includes 0 degrees to 5 degrees; the second direction A direction opposite to the second direction means: the angle between the vector along the first direction and the vector along the second direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an ac three-dimensional coordinate system, wherein, the first coordinate axis is the first c-axis, and the third coordinate axis is the first a-axis;
  • the second The three-dimensional coordinate system is an ac three-dimensional coordinate system, the second coordinate axis is the second c-axis, and the fourth coordinate axis is the second a-axis, wherein the direction of the first c-axis and the second c-axis same or opposite.
  • the first three-dimensional coordinate system further includes a fifth coordinate axis along a fifth direction
  • the second three-dimensional coordinate system further includes a sixth coordinate axis along a sixth direction.
  • the first direction is the same or opposite to the second direction
  • the third direction is the same or opposite to the fourth direction.
  • the third direction is the same as the fourth direction, which means: the angle between the vector along the third direction and the vector along the fourth direction includes 0 degrees to 5 degrees;
  • the opposite of the three directions and the fourth direction means: the angle range between the vector along the third direction and the vector along the fourth direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an xyz three-dimensional coordinate system, wherein the first coordinate axis is the first z-axis, the third coordinate axis is the first y-axis, and the fifth The coordinate axis is the first x-axis;
  • the second three-dimensional coordinate system is an xyz three-dimensional coordinate system, the second coordinate axis is the second z-axis, the fourth coordinate axis is the second y-axis, and the sixth coordinate axis is the second x-axis.
  • the first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in the same direction.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in the same direction.
  • the piezoelectric layer 350 includes a plurality of crystal grains, and the half-maximum width of the rocking curve of the crystal formed by the multiple crystal grains is less than 2.5 degrees.
  • the rocking curve (Rocking curve) describes the angular divergence of a specific crystal plane (crystal plane with a determined diffraction angle) in the sample, and is represented by a plane coordinate system, where the abscissa is the distance between the crystal plane and the sample plane. The included angle, the ordinate indicates the diffraction intensity of the crystal plane at a certain included angle, and the rocking curve is used to indicate the crystal quality. The smaller the half-peak width angle, the better the crystal quality.
  • Full Width at Half Maximum (FWHM) refers to the distance between two points whose function values are equal to half of the peak value in a peak of a function.
  • forming the piezoelectric layer 350 on a plane can prevent the piezoelectric layer 350 from including obviously diverted crystal grains, thereby improving the electromechanical coupling coefficient of the resonant device and the Q value of the resonant device.
  • the material of the electrode layer 360 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the portion of the electrode layer 340 that overlaps with the electrode layer 360 is located in the cavity 330; the portion of the electrode 360 that overlaps with the electrode 340 is located above the cavity 330, corresponding to The cavity 330 .
  • the material of the edge extension layer 371 includes metal.
  • the material of the edge extension layer 371 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the medium of the composite support layer 373 includes non-metallic materials.
  • the medium of the composite support layer 373 includes but is not limited to at least one of the following: silicon dioxide, silicon carbide, silicon oxyfluoride, and polymer.
  • the polymer includes but not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), polyimide.
  • the medium of the composite support layer in the composite structure on the piezoelectric layer may be a vacuum, ie a vacuum layer.
  • the medium of the composite support layer in the composite structure on the piezoelectric layer may be air, ie an air layer.
  • the composite structure 370 has no overlapping portion with the electrode layer 340 .
  • Fig. 3f is a schematic top view of a BAW resonator device 300 according to an embodiment of the present invention.
  • the electrode layer 360 is octagonal. It should be noted that electrode layers of other shapes known to those skilled in the art, such as hexagons and pentagons, may also be applied to the embodiments of the present invention.
  • the composite structure 370 is adjacent to one side of the electrode layer 360 .
  • Fig. 4a is a schematic structural diagram of section A of a BAW resonator device 400 according to an embodiment of the present invention.
  • an embodiment of the present invention provides a bulk acoustic wave resonator device 400 comprising: a substrate 410; an intermediate layer 420 located on the substrate 410, and the upper surface side of the intermediate layer 420 includes a cavity 430 and a groove 431, wherein, the groove 431 is located on one side of the cavity 430 and communicates with the cavity 430, the depth of the groove 431 is smaller than the depth of the cavity 430; the electrode layer 440 is located in the In the cavity 430; the composite structure 450, the first end of the composite structure 450 is located in the cavity 430, connected to the electrode layer 440, the second end of the composite structure 450 opposite to the first end Located in the groove 431, wherein the depth of the groove 431 is equal to the thickness of the composite structure 450, the composite structure 450 includes an edge extension layer 451 electrically connected to the electrode layer 440, and a composite support layer 453 , located on the edge extension layer 451, connected to the electrode layer 440, the composite
  • the composite support layer 453 thickens the medium between the electrode layer 470 and the edge extension layer 451, thereby reducing the edge capacitance 480, improving the electromechanical coupling coefficient of the resonator device and the composite
  • the structure 450 can block the leakage wave and improve the Q value.
  • the material of the substrate 410 includes but is not limited to at least one of the following: silicon, silicon carbide, glass, gallium arsenide, gallium nitride, and ceramics.
  • the material of the intermediate layer 420 includes but is not limited to at least one of the following: polymer, insulating dielectric, and polysilicon.
  • the polymer includes but is not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), and polyimide.
  • the insulating dielectric includes but is not limited to at least one of the following: aluminum nitride, silicon dioxide, silicon nitride, and titanium oxide.
  • the material of the electrode layer 440 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the material of the edge extension layer 451 includes metal.
  • the material of the edge extension layer 451 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the medium of the composite support layer 453 includes non-metallic materials.
  • the medium of the composite support layer 453 includes but is not limited to at least one of the following: silicon dioxide, silicon carbide, silicon oxyfluoride, and polymer.
  • the polymer includes but not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), polyimide.
  • the medium of the composite support layer in the composite structure under the piezoelectric layer may be a vacuum, ie a vacuum layer.
  • the medium of the composite support layer in the composite structure under the piezoelectric layer may be air, ie an air layer.
  • the composite structure 450 has no overlapping portion with the electrode layer 470 .
  • the piezoelectric layer 460 is a flat layer and also covers the upper surface side of the middle layer 420 .
  • the material of the piezoelectric layer 460 includes but is not limited to at least one of the following: aluminum nitride, aluminum alloy nitride, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate , Lead magnesium niobate - lead titanate.
  • the piezoelectric layer 460 includes a plurality of crystal grains, and the multiple crystal grains include a first crystal grain and a second crystal grain, wherein the first crystal grain and the second crystal grain are any two of the plurality of crystal grains.
  • crystal orientations, crystal planes, etc. of crystal grains can be represented based on a coordinate system.
  • the first grain can be expressed based on a first three-dimensional coordinate system
  • the second grain can be expressed based on a second three-dimensional coordinate system
  • the first three-dimensional coordinate system includes at least The first coordinate axis and the third coordinate axis along the third direction
  • the second three-dimensional coordinate system includes at least the second coordinate axis along the second direction and the fourth coordinate axis along the fourth direction
  • the first The coordinate axis corresponds to the height of the first crystal grain
  • the second coordinate axis corresponds to the height of the second crystal grain.
  • the first direction is the same as or opposite to the second direction. It should be noted that the first direction and the second direction being the same means: the angle between the vector along the first direction and the vector along the second direction includes 0 degrees to 5 degrees; the second direction A direction opposite to the second direction means: the angle between the vector along the first direction and the vector along the second direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an ac three-dimensional coordinate system, wherein, the first coordinate axis is the first c-axis, and the third coordinate axis is the first a-axis;
  • the second The three-dimensional coordinate system is an ac three-dimensional coordinate system, the second coordinate axis is the second c-axis, and the fourth coordinate axis is the second a-axis, wherein the direction of the first c-axis and the second c-axis same or opposite.
  • the first three-dimensional coordinate system further includes a fifth coordinate axis along a fifth direction
  • the second three-dimensional coordinate system further includes a sixth coordinate axis along a sixth direction.
  • the first direction is the same or opposite to the second direction
  • the third direction is the same or opposite to the fourth direction.
  • the third direction is the same as the fourth direction, which means: the angle between the vector along the third direction and the vector along the fourth direction includes 0 degrees to 5 degrees;
  • the opposite of the three directions and the fourth direction means: the angle range between the vector along the third direction and the vector along the fourth direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an xyz three-dimensional coordinate system, wherein the first coordinate axis is the first z-axis, the third coordinate axis is the first y-axis, and the fifth The coordinate axis is the first x-axis;
  • the second three-dimensional coordinate system is an xyz three-dimensional coordinate system, the second coordinate axis is the second z-axis, the fourth coordinate axis is the second y-axis, and the sixth coordinate axis is the second x-axis.
  • the first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in the same direction.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in the same direction.
  • the piezoelectric layer 460 includes a plurality of crystal grains, and the rocking curve half-maximum width of the crystal formed by the multiple crystal grains is less than 2.5 degrees.
  • forming the piezoelectric layer 460 on a plane can prevent the piezoelectric layer 460 from including obviously diverted crystal grains, thereby improving the electromechanical coupling coefficient of the resonant device and the Q value of the resonant device.
  • the material of the electrode layer 470 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the portion of the electrode layer 440 that overlaps with the electrode layer 470 is located in the cavity 430; the portion of the electrode 470 that overlaps with the electrode 440 is located above the cavity 430, corresponding to The cavity 430 .
  • Fig. 4b is a schematic top view of a BAW resonator device 400 according to an embodiment of the present invention.
  • the electrode layer 440 is octagonal. It should be noted that electrode layers of other shapes known to those skilled in the art, such as hexagons and pentagons, may also be applied to the embodiments of the present invention.
  • the composite structure 450 is adjacent to two sides of the electrode layer 440 .
  • Fig. 5a is a schematic structural diagram of section A of a BAW resonator device 500 according to an embodiment of the present invention.
  • an embodiment of the present invention provides a bulk acoustic wave resonator device 500 comprising: a substrate 510; an intermediate layer 520 located on the substrate 510, and the upper surface side of the intermediate layer 520 includes a cavity 530 and a groove 531, wherein, the groove 531 is located on one side of the cavity 530 and communicates with the cavity 530, the depth of the groove 531 is smaller than the depth of the cavity 530; the electrode layer 540 is located in the In the cavity 530; the composite structure 550, the first end of the composite structure 550 is located in the cavity 530, connected to the electrode layer 540, the second end of the composite structure 550 opposite to the first end Located in the groove 531, wherein the depth of the groove 531 is equal to the thickness of the composite structure 550, the composite structure 550 includes an edge extension layer 551 electrically connected to the electrode layer 540, and a composite support layer 553 , located on the edge extension layer 551, connected to the electrode layer 540,
  • the composite support layer 553 thickens the medium between the electrode layer 570 and the edge extension layer 551 to reduce the edge capacitance 590
  • the composite support layer 583 thickens the electrode layer 540
  • the medium between the edge extension layer 581 reduces the edge capacitive reactance 591, thereby improving the electromechanical coupling coefficient of the resonator and the composite structure 550 can block leakage waves and improve the Q value.
  • the material of the substrate 510 includes but is not limited to at least one of the following: silicon, silicon carbide, glass, gallium arsenide, gallium nitride, and ceramics.
  • the material of the intermediate layer 520 includes but is not limited to at least one of the following: polymer, insulating dielectric, and polysilicon.
  • the polymer includes but is not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), and polyimide.
  • the insulating dielectric includes but is not limited to at least one of the following: aluminum nitride, silicon dioxide, silicon nitride, and titanium oxide.
  • the material of the electrode layer 540 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the material of the edge extension layer 551 includes metal.
  • the material of the edge extension layer 551 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the medium of the composite support layer 553 includes non-metallic materials.
  • the medium of the composite support layer 553 includes but is not limited to at least one of the following: silicon dioxide, silicon carbide, silicon oxyfluoride, and polymer.
  • the polymer includes but not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), polyimide.
  • the medium of the composite support layer in the composite structure under the piezoelectric layer may be a vacuum, ie a vacuum layer.
  • the medium of the composite support layer in the composite structure under the piezoelectric layer may be air, ie an air layer.
  • the piezoelectric layer 560 is a flat layer and also covers the upper surface side of the middle layer 520 .
  • the material of the piezoelectric layer 560 includes but is not limited to at least one of the following: aluminum nitride, aluminum alloy nitride, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate , Lead magnesium niobate - lead titanate.
  • the piezoelectric layer 560 includes a plurality of crystal grains, and the multiple crystal grains include a first crystal grain and a second crystal grain, wherein the first crystal grain and the second crystal grain are any two of the plurality of crystal grains.
  • crystal orientations, crystal planes, etc. of crystal grains can be represented based on a coordinate system.
  • the first grain can be expressed based on a first three-dimensional coordinate system
  • the second grain can be expressed based on a second three-dimensional coordinate system
  • the first three-dimensional coordinate system includes at least The first coordinate axis and the third coordinate axis along the third direction
  • the second three-dimensional coordinate system includes at least the second coordinate axis along the second direction and the fourth coordinate axis along the fourth direction
  • the first The coordinate axis corresponds to the height of the first crystal grain
  • the second coordinate axis corresponds to the height of the second crystal grain.
  • the first direction is the same as or opposite to the second direction. It should be noted that the first direction and the second direction being the same means: the angle between the vector along the first direction and the vector along the second direction includes 0 degrees to 5 degrees; the second direction A direction opposite to the second direction means: the angle between the vector along the first direction and the vector along the second direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an ac three-dimensional coordinate system, wherein, the first coordinate axis is the first c-axis, and the third coordinate axis is the first a-axis;
  • the second The three-dimensional coordinate system is an ac three-dimensional coordinate system, the second coordinate axis is the second c-axis, and the fourth coordinate axis is the second a-axis, wherein the direction of the first c-axis and the second c-axis same or opposite.
  • the first three-dimensional coordinate system further includes a fifth coordinate axis along a fifth direction
  • the second three-dimensional coordinate system further includes a sixth coordinate axis along a sixth direction.
  • the first direction is the same or opposite to the second direction
  • the third direction is the same or opposite to the fourth direction.
  • the third direction is the same as the fourth direction, which means: the angle between the vector along the third direction and the vector along the fourth direction includes 0 degrees to 5 degrees;
  • the opposite of the three directions and the fourth direction means: the angle range between the vector along the third direction and the vector along the fourth direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an xyz three-dimensional coordinate system, wherein the first coordinate axis is the first z-axis, the third coordinate axis is the first y-axis, and the fifth The coordinate axis is the first x-axis;
  • the second three-dimensional coordinate system is an xyz three-dimensional coordinate system, the second coordinate axis is the second z-axis, the fourth coordinate axis is the second y-axis, and the sixth coordinate axis is the second x-axis.
  • the first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in the same direction.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in the same direction.
  • the piezoelectric layer 560 includes a plurality of crystal grains, and the rocking curve half-maximum width of the crystal formed by the multiple crystal grains is less than 2.5 degrees.
  • forming the piezoelectric layer 560 on a plane can make the piezoelectric layer 560 not include obviously diverted crystal grains, thereby improving the electromechanical coupling coefficient of the resonant device and the Q value of the resonant device.
  • the material of the electrode layer 570 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the portion of the electrode layer 540 that overlaps with the electrode layer 570 is located in the cavity 530; the portion of the electrode 570 that overlaps with the electrode 540 is located above the cavity 530, corresponding to The cavity 530 .
  • the material of the edge extension layer 581 includes metal.
  • the material of the edge extension layer 581 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the medium of the composite support layer 583 includes non-metallic materials.
  • the medium of the composite support layer 583 includes but is not limited to at least one of the following: silicon dioxide, silicon carbide, silicon oxyfluoride, and polymer.
  • the polymer includes but not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), polyimide.
  • the medium of the composite support layer in the composite structure on the piezoelectric layer may be a vacuum, ie a vacuum layer.
  • the medium of the composite support layer in the composite structure on the piezoelectric layer may be air, ie an air layer.
  • the composite structure 550 and the composite structure 580 have no overlap. In this embodiment, the composite structure 550 and the composite structure 580 are located on two sides of the overlapping portion of the electrode layer 540 and the electrode layer 570 .
  • Fig. 5b is a schematic top view of a BAW resonator device 500 according to an embodiment of the present invention.
  • the electrode layer 540 is octagonal. It should be noted that electrode layers of other shapes known to those skilled in the art, such as hexagons and pentagons, may also be applied to the embodiments of the present invention.
  • the composite structure 550 is adjacent to one side of the electrode layer 540 .
  • the electrode layer 570 is octagonal and coincides with the electrode layer 540 . It should be noted that electrode layers of other shapes known to those skilled in the art, such as hexagons and pentagons, may also be applied to the embodiments of the present invention.
  • the composite structure 580 is adjacent to three sides of the electrode layer 570 .
  • Fig. 6a is a schematic structural diagram of section A of a BAW resonator device 600 according to an embodiment of the present invention.
  • an embodiment of the present invention provides a bulk acoustic wave resonator device 600 comprising: a substrate 610; an intermediate layer 620 located on the substrate 610, and the upper surface side of the intermediate layer 620 includes a cavity 630 and a groove 631, wherein, the groove 631 is located on one side of the cavity 630 and communicates with the cavity 630, the depth of the groove 631 is smaller than the depth of the cavity 630; the electrode layer 640, the electrode The first end 641 of the layer 640 is located in the cavity 630, and the second end 643 of the electrode layer 640 is located in the groove 631, wherein the depth of the groove 631 is equal to the thickness of the electrode layer 640
  • the piezoelectric layer 650 is located on the electrode layer 640 and the intermediate layer 620, covering the cavity 630, wherein the piezoelectric layer 650 includes a first side 651 and a second side opposite to the first side 651 Two sides 653, the electrode layer 640 and the intermediate layer
  • the composite support layer 683 thickens the medium between the electrode layer 640 and the edge extension layer 681, thereby reducing the edge capacitance between the electrode layer 640 and the edge extension layer 681. Impedance improves the electromechanical coupling coefficient of the resonant device.
  • the acoustic impedance of the region F where the edge structure 670 is located is greater than the region E where the electrode layer 660 is located, the acoustic impedance of the region F is greater than the acoustic impedance of air and vacuum, and the acoustic impedance of the region F
  • the acoustic impedance is greater than the acoustic impedance of the region C where the composite structure 680 is located, and the acoustic impedance of the region C is smaller than the acoustic impedance of the region E.
  • the composite structure 680 can make the acoustic impedance of the region C closer to air and
  • the acoustic impedance of the vacuum can reflect the sound wave at the edge of the resonance area more effectively, block the leakage wave, and improve the Q value.
  • the material of the substrate 610 includes but is not limited to at least one of the following: silicon, silicon carbide, glass, gallium arsenide, gallium nitride, and ceramics.
  • the material of the intermediate layer 620 includes but is not limited to at least one of the following: polymer, insulating dielectric, and polysilicon.
  • the polymer includes but is not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), and polyimide.
  • the insulating dielectric includes but is not limited to at least one of the following: aluminum nitride, silicon dioxide, silicon nitride, and titanium oxide.
  • the material of the electrode layer 640 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the piezoelectric layer 650 is a flat layer and also covers the upper surface side of the middle layer 620 .
  • the material of the piezoelectric layer 650 includes but is not limited to at least one of the following: aluminum nitride, aluminum alloy nitride, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate , Lead magnesium niobate - lead titanate.
  • the piezoelectric layer 650 includes a plurality of crystal grains, and the multiple crystal grains include a first crystal grain and a second crystal grain, wherein the first crystal grain and the second crystal grain are any two of the plurality of crystal grains.
  • crystal orientations, crystal planes, etc. of crystal grains can be represented based on a coordinate system.
  • the first grain can be expressed based on a first three-dimensional coordinate system
  • the second grain can be expressed based on a second three-dimensional coordinate system
  • the first three-dimensional coordinate system includes at least The first coordinate axis and the third coordinate axis along the third direction
  • the second three-dimensional coordinate system includes at least the second coordinate axis along the second direction and the fourth coordinate axis along the fourth direction
  • the first The coordinate axis corresponds to the height of the first crystal grain
  • the second coordinate axis corresponds to the height of the second crystal grain.
  • the first direction is the same as or opposite to the second direction. It should be noted that the first direction and the second direction being the same means: the angle between the vector along the first direction and the vector along the second direction includes 0 degrees to 5 degrees; the second direction A direction opposite to the second direction means: the angle between the vector along the first direction and the vector along the second direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an ac three-dimensional coordinate system, wherein, the first coordinate axis is the first c-axis, and the third coordinate axis is the first a-axis;
  • the second The three-dimensional coordinate system is an ac three-dimensional coordinate system, the second coordinate axis is the second c-axis, and the fourth coordinate axis is the second a-axis, wherein the direction of the first c-axis and the second c-axis same or opposite.
  • the first three-dimensional coordinate system further includes a fifth coordinate axis along a fifth direction
  • the second three-dimensional coordinate system further includes a sixth coordinate axis along a sixth direction.
  • the first direction is the same or opposite to the second direction
  • the third direction is the same or opposite to the fourth direction.
  • the third direction is the same as the fourth direction, which means: the angle between the vector along the third direction and the vector along the fourth direction includes 0 degrees to 5 degrees;
  • the opposite of the three directions and the fourth direction means: the angle range between the vector along the third direction and the vector along the fourth direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an xyz three-dimensional coordinate system, wherein the first coordinate axis is the first z-axis, the third coordinate axis is the first y-axis, and the fifth The coordinate axis is the first x-axis;
  • the second three-dimensional coordinate system is an xyz three-dimensional coordinate system, the second coordinate axis is the second z-axis, the fourth coordinate axis is the second y-axis, and the sixth coordinate axis is the second x-axis.
  • the first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in the same direction.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in the same direction.
  • the piezoelectric layer 650 includes a plurality of crystal grains, and the half-maximum width of the rocking curve of the crystal formed by the multiple crystal grains is less than 2.5 degrees.
  • forming the piezoelectric layer 650 on a plane can make the piezoelectric layer 650 not include obviously diverted crystal grains, thereby improving the electromechanical coupling coefficient of the resonant device and the Q value of the resonant device.
  • the material of the electrode layer 660 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the portion of the electrode layer 640 that overlaps with the electrode layer 660 is located in the cavity 630; the portion of the electrode 660 that overlaps with the electrode 640 is located above the cavity 630, corresponding to The cavity 630 .
  • the edge structure 670 includes an edge surrounding layer located on the second side 653 and above the piezoelectric layer 650, the edge surrounding layer is electrically connected to the electrode layer 660; and an edge support Layer, located on the second side 653, located on the piezoelectric layer 650, located between the piezoelectric layer 650 and the edge surrounding layer, the edge support layer is connected to the electrode layer 660, the The edge surrounding layer overlaps with the edge supporting layer.
  • the material of the edge surrounding layer is different from that of the edge support layer. In another embodiment, the material of the edge surround layer is the same as the material of the edge support layer.
  • the material of the edge surrounding layer includes metal, and the material of the edge supporting layer includes non-metallic material.
  • the material of the edge surrounding layer includes metal, and the medium of the edge supporting layer includes air, that is, an air layer.
  • the material of the edge surrounding layer includes metal, and the medium of the edge support layer includes vacuum, ie, a vacuum layer.
  • the material of the edge surround layer includes metal, and the material of the edge support layer includes metal.
  • the thickness of the composite structure 680 is greater than the thickness of the edge structure 670 . In another embodiment, the thickness of the composite structure on the piezoelectric layer is equal to the thickness of the edge structure on the piezoelectric layer. In another embodiment, the thickness of the composite structure on the piezoelectric layer is less than the thickness of the edge structures on the piezoelectric layer.
  • the material of the edge extension layer 681 includes metal.
  • the material of the edge extension layer 681 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the medium of the composite support layer 683 includes non-metallic materials.
  • the medium of the composite support layer 683 includes but is not limited to at least one of the following: silicon dioxide, silicon carbide, silicon oxyfluoride, and polymer.
  • the polymer includes but not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), polyimide.
  • the medium of the composite support layer in the composite structure on the piezoelectric layer may be a vacuum, ie a vacuum layer.
  • the medium of the composite support layer in the composite structure on the piezoelectric layer may be air, ie an air layer.
  • the composite structure 680 has no overlapping portion with the electrode layer 640 .
  • Fig. 6c is a schematic top view of a BAW resonator device 600 according to an embodiment of the present invention.
  • the edge structure 670 is ring-shaped.
  • the edge structure 670 is octagonal.
  • edge structures of other shapes known to those skilled in the art, such as hexagons and pentagons may also be applied to the embodiments of the present invention.
  • the composite structure 680 is adjacent to one side of the edge structure 670 .
  • Fig. 7a is a schematic structural diagram of section A of a BAW resonator device 700 according to an embodiment of the present invention.
  • an embodiment of the present invention provides a bulk acoustic wave resonator device 700 comprising: a substrate 710; an intermediate layer 720 located on the substrate 710, and the upper surface side of the intermediate layer 720 includes a cavity 730 and a groove 731, wherein, the groove 731 is located on one side of the cavity 730 and communicates with the cavity 730, the depth of the groove 731 is smaller than the depth of the cavity 730; the electrode layer 740 is located in the In the cavity 730; the edge structure 750 is located in the cavity 730, and the electrode layer 740 is located inside the edge structure 750 (that is, toward the side of the central axis of the BAW resonator device 700); the composite structure 760 , located outside the edge structure 750 (that is, pointing to the side opposite to the central axis of the bulk acoustic wave resonator device 700), the first end of the composite structure 760 is connected to the edge structure 750, and the composite structure 760.
  • the composite support layer 763 overlaps with the edge extension layer 761; the piezoelectric layer 770 is located on the edge extension layer 761.
  • the electrode layer 740, the edge structure 750, the composite support layer 763 and the intermediate layer 720 cover the cavity 730, wherein the piezoelectric layer 770 includes a first side 771 and the first The second side 773 opposite to the side 771, the electrode layer 740, the edge structure 750, the composite structure 760 and the intermediate layer 720 are located on the first side 771; the electrode layer 780 is located on the second side 773 , located on the piezoelectric layer 770 , the edge structure 750 overlaps with the electrode layer 780 .
  • the composite support layer 763 thickens the medium between the electrode layer 780 and the edge extension layer 761, thereby reducing the edge capacitance between the electrode layer 780 and the edge extension layer 761. Impedance improves the electromechanical coupling coefficient of the resonant device.
  • the acoustic impedance of the edge region where the edge structure 750 is located is greater than the acoustic impedance of the inner region where the electrode layer 740 is located, the acoustic impedance of the edge region is greater than the acoustic impedance of air and vacuum, and the acoustic impedance of the edge region is greater than
  • the acoustic impedance of the outer region where the composite structure 760 is located the acoustic impedance of the outer region is smaller than the acoustic impedance of the inner region, and the composite structure 760 can make the acoustic impedance of the outer region closer to the acoustic impedance of air and vacuum Impedance, so that the sound wave at the edge of the resonance area can be reflected more effectively, the leakage wave is blocked, and the Q value is improved.
  • the material of the substrate 710 includes but is not limited to at least one of the following: silicon, silicon carbide, glass, gallium arsenide, gallium nitride, and ceramics.
  • the material of the intermediate layer 720 includes but is not limited to at least one of the following: polymer, insulating dielectric, and polysilicon.
  • the polymer includes but is not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), and polyimide.
  • the insulating dielectric includes but is not limited to at least one of the following: aluminum nitride, silicon dioxide, silicon nitride, and titanium oxide.
  • the material of the electrode layer 740 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the edge structure 750 includes an edge surrounding layer located in the cavity 730, the edge surrounding layer electrically connected to the electrode layer 740; and an edge supporting layer located on the edge surrounding layer, The edge supporting layer is connected to the electrode layer 740 , and the edge surrounding layer overlaps with the edge supporting layer.
  • the material of the edge surrounding layer is different from that of the edge support layer. In another embodiment, the material of the edge surround layer is the same as the material of the edge support layer.
  • the material of the edge surrounding layer includes metal, and the material of the edge supporting layer includes non-metallic material.
  • the material of the edge surrounding layer includes metal, and the medium of the edge supporting layer includes air, that is, an air layer.
  • the material of the edge wrapping layer includes metal, and the medium of the edge support layer includes vacuum, i.e. a vacuum layer.
  • the material of the edge surround layer includes metal, and the material of the edge support layer includes metal.
  • the thickness of the composite structure 760 is greater than the thickness of the edge structure 750 . In another embodiment, the thickness of the composite structure under the piezoelectric layer is equal to the thickness of the edge structure under the piezoelectric layer. In another embodiment, the thickness of the composite structure under the piezoelectric layer is less than the thickness of the edge structure under the piezoelectric layer.
  • the material of the edge extension layer 761 includes metal.
  • the material of the edge extension layer 761 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the medium of the composite support layer 763 includes non-metallic materials.
  • the medium of the composite support layer 763 includes but is not limited to at least one of the following: silicon dioxide, silicon carbide, silicon oxyfluoride, and polymer.
  • the polymer includes but not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), polyimide.
  • the medium of the composite support layer in the composite structure under the piezoelectric layer may be a vacuum, ie a vacuum layer.
  • the medium of the composite support layer in the composite structure under the piezoelectric layer may be air, ie an air layer.
  • the composite structure 760 has no overlapping portion with the electrode layer 780 .
  • the piezoelectric layer 770 is a flat layer and also covers the upper surface side of the intermediate layer 720 .
  • the material of the piezoelectric layer 770 includes but is not limited to at least one of the following: aluminum nitride, aluminum alloy nitride, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate , Lead magnesium niobate - lead titanate.
  • the piezoelectric layer 770 includes a plurality of crystal grains, and the multiple crystal grains include a first crystal grain and a second crystal grain, wherein the first crystal grain and the second crystal grain are any two of the plurality of crystal grains.
  • crystal orientations, crystal planes, etc. of crystal grains can be expressed based on a coordinate system.
  • the first grain can be expressed based on a first three-dimensional coordinate system
  • the second grain can be expressed based on a second three-dimensional coordinate system
  • the first three-dimensional coordinate system includes at least The first coordinate axis and the third coordinate axis along the third direction
  • the second three-dimensional coordinate system includes at least the second coordinate axis along the second direction and the fourth coordinate axis along the fourth direction
  • the first The coordinate axis corresponds to the height of the first crystal grain
  • the second coordinate axis corresponds to the height of the second crystal grain.
  • the first direction is the same as or opposite to the second direction. It should be noted that the first direction and the second direction being the same means: the angle between the vector along the first direction and the vector along the second direction includes 0 degrees to 5 degrees; the second direction A direction opposite to the second direction means: the angle between the vector along the first direction and the vector along the second direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an ac three-dimensional coordinate system, wherein, the first coordinate axis is the first c-axis, and the third coordinate axis is the first a-axis;
  • the second The three-dimensional coordinate system is an ac three-dimensional coordinate system, the second coordinate axis is the second c-axis, and the fourth coordinate axis is the second a-axis, wherein the direction of the first c-axis and the second c-axis same or opposite.
  • the first three-dimensional coordinate system further includes a fifth coordinate axis along a fifth direction
  • the second three-dimensional coordinate system further includes a sixth coordinate axis along a sixth direction.
  • the first direction is the same or opposite to the second direction
  • the third direction is the same or opposite to the fourth direction.
  • the third direction is the same as the fourth direction, which means: the angle between the vector along the third direction and the vector along the fourth direction includes 0 degrees to 5 degrees;
  • the opposite of the three directions and the fourth direction means: the angle range between the vector along the third direction and the vector along the fourth direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an xyz three-dimensional coordinate system, wherein the first coordinate axis is the first z-axis, the third coordinate axis is the first y-axis, and the fifth The coordinate axis is the first x-axis;
  • the second three-dimensional coordinate system is an xyz three-dimensional coordinate system, the second coordinate axis is the second z-axis, the fourth coordinate axis is the second y-axis, and the sixth coordinate axis is the second x-axis.
  • the first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in the same direction.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in the same direction.
  • the piezoelectric layer 770 includes a plurality of crystal grains, and the half-maximum width of the rocking curve of the crystal formed by the multiple crystal grains is less than 2.5 degrees.
  • forming the piezoelectric layer 770 on a plane can make the piezoelectric layer 770 not include obviously diverted crystal grains, thereby improving the electromechanical coupling coefficient of the resonant device and the Q value of the resonant device.
  • the material of the electrode layer 780 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the portion of the electrode layer 740 that overlaps with the electrode layer 780 is located in the cavity 730; the portion of the electrode 780 that overlaps with the electrode 740 is located above the cavity 730, corresponding to The cavity 730 .
  • Fig. 7b is a schematic top view of a bulk acoustic wave resonance device 700 according to an embodiment of the present invention.
  • the edge structure 750 is ring-shaped.
  • the edge structure 750 is octagonal. It should be noted that edge structures of other shapes known to those skilled in the art, such as hexagons and pentagons, may also be applied to the embodiments of the present invention.
  • the composite structure 760 is adjacent to three sides of the edge structure 750 .
  • Fig. 8a is a schematic structural diagram of section A of a BAW resonator device 800 according to an embodiment of the present invention.
  • an embodiment of the present invention provides a bulk acoustic wave resonator device 800 comprising: a substrate 810; an intermediate layer 820 located on the substrate 810, and the upper surface side of the intermediate layer 820 includes a cavity 830 and a groove 831, wherein, the groove 831 is located on one side of the cavity 830 and communicates with the cavity 830, the depth of the groove 831 is smaller than the depth of the cavity 830; the electrode layer 840 is located in the In the cavity 830; the edge structure 850 is located in the cavity 830, and the electrode layer 840 is located inside the edge structure 850 (that is, toward the side of the central axis of the BAW resonator device 800); the composite structure 860 , located outside the edge structure 850 (that is, pointing to the side opposite to the central axis of the bulk acoustic wave resonator device 800), the first end of the composite structure 860 is connected to the edge structure 850, and the composite structure 860
  • the composite support layer 863 overlaps with the edge extension layer 861; the piezoelectric layer 870 is located on the edge extension layer 861.
  • the electrode layer 840, the edge structure 850, the composite support layer 863 and the intermediate layer 820 cover the cavity 830, wherein the piezoelectric layer 870 includes a first side 871 and the first The second side 873 opposite to the side 871, the electrode layer 840, the edge structure 850, the composite structure 860 and the intermediate layer 820 are located on the first side 871; the electrode layer 880 is located on the second side 873, located on the piezoelectric layer 870, the electrode layer 880 has an overlapping portion with the edge structure 850; the edge structure 851, located on the second side 873, located on the piezoelectric layer 870, the electrode The layer 880 is located inside the edge structure 851 (that is, the side pointing to the central axis of the bulk acoustic wave resonator device 800), the edge structure 851 has an overlapping portion with the electrode layer
  • the composite support layer 863 thickens the medium between the electrode layer 880 and the edge extension layer 861 to reduce the edge capacitance between the electrode layer 880 and the edge extension layer 861
  • the composite support layer 893 thickens the medium between the electrode layer 840 and the edge extension layer 891, reduces the edge capacitance between the electrode layer 840 and the edge extension layer 891, thereby improving the The electromechanical coupling coefficient of a resonant device.
  • the acoustic impedance of the first edge region where the edge structure 850 is located is greater than the inner region where the electrode layer 840 is located, and the acoustic impedance of the first edge region is greater than the acoustic impedance of the first outer region where the composite structure 860 is located.
  • the acoustic impedance of the first outer region is smaller than the acoustic impedance of the inner region, and the composite structure 860 can make the acoustic impedance of the first outer region closer to the acoustic impedance of air and vacuum;
  • the edge structure 851 is The acoustic impedance of the second edge region is greater than that of the inner region where the electrode layer 880 is located, and the acoustic impedance of the second edge region is greater than that of the second outer region where the composite structure 890 is located.
  • the acoustic impedance of the region is smaller than the acoustic impedance of the inner region, and the composite structure 890 can make the acoustic impedance of the second outer region closer to the acoustic impedance of air and vacuum; thus, the sound wave at the edge of the resonance region can be reflected more effectively , Block the leaky wave and increase the Q value.
  • the material of the substrate 810 includes but is not limited to at least one of the following: silicon, silicon carbide, glass, gallium arsenide, gallium nitride, and ceramics.
  • the material of the intermediate layer 820 includes but is not limited to at least one of the following: polymer, insulating dielectric, and polysilicon.
  • the polymer includes but is not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), and polyimide.
  • the insulating dielectric includes but is not limited to at least one of the following: aluminum nitride, silicon dioxide, silicon nitride, and titanium oxide.
  • the material of the electrode layer 840 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the edge structure 850 includes a first edge surrounding layer located in the cavity 830, the first edge surrounding layer electrically connected to the electrode layer 840; and a first edge supporting layer located in the cavity 830. On the first edge surrounding layer, the first edge supporting layer is connected to the electrode layer 840 , and the first edge surrounding layer overlaps with the first edge supporting layer.
  • the material of the first edge surrounding layer is different from the material of the first edge support layer. In another embodiment, the material of the first edge surround layer is the same as that of the first edge support layer.
  • the material of the first edge surrounding layer includes metal, and the material of the first edge support layer includes non-metallic material.
  • the material of the first edge surrounding layer includes metal, and the medium of the first edge supporting layer includes air, that is, an air layer.
  • the material of the first edge surrounding layer includes metal, and the medium of the first edge support layer includes vacuum, ie, a vacuum layer.
  • the material of the first edge surround layer includes metal, and the material of the first edge support layer includes metal.
  • the thickness of the composite structure 860 is greater than the thickness of the edge structure 850 . In another embodiment, the thickness of the composite structure under the piezoelectric layer is equal to the thickness of the edge structure under the piezoelectric layer. In another embodiment, the thickness of the composite structure under the piezoelectric layer is less than the thickness of the edge structure under the piezoelectric layer.
  • the material of the edge extension layer 861 includes metal.
  • the material of the edge extension layer 861 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the medium of the composite support layer 863 includes non-metallic materials.
  • the medium of the composite support layer 863 includes but is not limited to at least one of the following: silicon dioxide, silicon carbide, silicon oxyfluoride, and polymer.
  • the polymer includes but not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), polyimide.
  • the medium of the composite support layer in the composite structure under the piezoelectric layer may be a vacuum, ie a vacuum layer.
  • the medium of the composite support layer in the composite structure under the piezoelectric layer may be air, ie an air layer.
  • the composite structure 860 has no overlapping portion with the electrode layer 880 .
  • the piezoelectric layer 870 is a flat layer and also covers the upper surface side of the middle layer 820 .
  • the material of the piezoelectric layer 870 includes but is not limited to at least one of the following: aluminum nitride, aluminum alloy nitride, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate , Lead magnesium niobate - lead titanate.
  • the piezoelectric layer 870 includes a plurality of crystal grains, and the multiple crystal grains include a first crystal grain and a second crystal grain, wherein the first crystal grain and the second crystal grain are any two of the plurality of crystal grains.
  • crystal orientations, crystal planes, etc. of crystal grains can be represented based on a coordinate system.
  • the first grain can be expressed based on a first three-dimensional coordinate system
  • the second grain can be expressed based on a second three-dimensional coordinate system
  • the first three-dimensional coordinate system includes at least The first coordinate axis and the third coordinate axis along the third direction
  • the second three-dimensional coordinate system includes at least the second coordinate axis along the second direction and the fourth coordinate axis along the fourth direction
  • the first The coordinate axis corresponds to the height of the first crystal grain
  • the second coordinate axis corresponds to the height of the second crystal grain.
  • the first direction is the same as or opposite to the second direction. It should be noted that the first direction and the second direction being the same means: the angle between the vector along the first direction and the vector along the second direction includes 0 degrees to 5 degrees; the second direction A direction opposite to the second direction means: the angle between the vector along the first direction and the vector along the second direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an ac three-dimensional coordinate system, wherein, the first coordinate axis is the first c-axis, and the third coordinate axis is the first a-axis;
  • the second The three-dimensional coordinate system is an ac three-dimensional coordinate system, the second coordinate axis is the second c-axis, and the fourth coordinate axis is the second a-axis, wherein the direction of the first c-axis and the second c-axis same or opposite.
  • the first three-dimensional coordinate system further includes a fifth coordinate axis along a fifth direction
  • the second three-dimensional coordinate system further includes a sixth coordinate axis along a sixth direction.
  • the first direction is the same or opposite to the second direction
  • the third direction is the same or opposite to the fourth direction.
  • the third direction is the same as the fourth direction, which means: the angle between the vector along the third direction and the vector along the fourth direction includes 0 degrees to 5 degrees;
  • the opposite of the three directions and the fourth direction means: the angle range between the vector along the third direction and the vector along the fourth direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an xyz three-dimensional coordinate system, wherein the first coordinate axis is the first z-axis, the third coordinate axis is the first y-axis, and the fifth The coordinate axis is the first x-axis;
  • the second three-dimensional coordinate system is an xyz three-dimensional coordinate system, the second coordinate axis is the second z-axis, the fourth coordinate axis is the second y-axis, and the sixth coordinate axis is the second x-axis.
  • the first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in the same direction.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in the same direction.
  • the piezoelectric layer 870 includes a plurality of crystal grains, and the rocking curve half-maximum width of the crystal formed by the multiple crystal grains is less than 2.5 degrees.
  • forming the piezoelectric layer 870 on a plane can make the piezoelectric layer 870 not include obviously diverted crystal grains, thereby improving the electromechanical coupling coefficient of the resonant device and the Q value of the resonant device.
  • the material of the electrode layer 880 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the portion of the electrode layer 840 that overlaps with the electrode layer 880 is located in the cavity 830; the portion of the electrode 880 that overlaps with the electrode 840 is located above the cavity 830, corresponding to The cavity 830 .
  • the edge structure 851 includes a second edge surrounding layer located on the second side 873 and above the piezoelectric layer 870 , the second edge surrounding layer is electrically connected to the electrode layer 880 and a second edge support layer, located on the second side 873, on the piezoelectric layer 870, between the piezoelectric layer 870 and the second edge surrounding layer, the second edge support A layer is connected to the electrode layer 880, and the second edge surrounding layer and the second edge supporting layer are overlapped.
  • the material of the second edge surrounding layer is different from that of the second edge supporting layer. In another embodiment, the material of the second edge surround layer is the same as that of the second edge support layer.
  • the material of the second edge surrounding layer includes metal, and the material of the second edge support layer includes non-metallic material.
  • the material of the second edge surrounding layer includes metal, and the medium of the second edge support layer includes air, ie an air layer.
  • the material of the second edge surround layer includes metal, and the medium of the second edge support layer includes vacuum, ie, a vacuum layer.
  • the material of the second edge surround layer includes metal, and the material of the second edge support layer includes metal.
  • the thickness of the composite structure 890 is greater than the thickness of the edge structure 851 . In another embodiment, the thickness of the composite structure on the piezoelectric layer is equal to the thickness of the edge structure on the piezoelectric layer. In another embodiment, the thickness of the composite structure on the piezoelectric layer is less than the thickness of the edge structures on the piezoelectric layer.
  • the material of the edge extension layer 891 includes metal.
  • the material of the edge extension layer 891 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the medium of the composite support layer 893 includes non-metallic materials.
  • the medium of the composite support layer 893 includes but is not limited to at least one of the following: silicon dioxide, silicon carbide, silicon oxyfluoride, and polymer.
  • the polymer includes but not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), polyimide.
  • the medium of the composite support layer in the composite structure on the piezoelectric layer may be a vacuum, ie a vacuum layer.
  • the medium of the composite support layer in the composite structure on the piezoelectric layer may be air, i.e. an air layer.
  • the composite structure 890 has no overlapping portion with the electrode layer 840 .
  • the composite structure 890 has no overlapping portion with the composite structure 860 .
  • the composite structure 890 and the composite structure 860 are located on both sides of the electrode layer 880 .
  • Fig. 8b is a schematic top view of a BAW resonator device 800 according to an embodiment of the present invention.
  • the edge structure 850 and the edge structure 851 have overlapping portions 853 .
  • the surrounding edge formed by the edge structure 850 and the edge structure 851 is ring-shaped.
  • the surrounding edge formed by the edge structure 850 and the edge structure 851 is octagonal. It should be noted that other shapes known to those skilled in the art, such as hexagons, pentagons, etc., may also be applied to the embodiments of the present invention.
  • the composite structure 860 is adjacent to both sides of the edge structure 850
  • the composite structure 890 is adjacent to both sides of the edge structure 851 .
  • Fig. 9a is a schematic structural diagram of section A of a BAW resonator device 900 according to an embodiment of the present invention.
  • an embodiment of the present invention provides a bulk acoustic wave resonator device 900 comprising: a substrate 910; an intermediate layer 920 located on the substrate 910, and the upper surface side of the intermediate layer 920 includes a cavity 930 and a groove 931, wherein, the groove 931 is located on one side of the cavity 930 and communicates with the cavity 930, the depth of the groove 931 is smaller than the depth of the cavity 930; the electrode layer 940, the electrode The first end 941 of the layer 940 is located in the cavity 930, and the second end 943 of the electrode layer 940 is located in the groove 931, wherein the depth of the groove 931 is equal to the thickness of the electrode layer 940
  • the piezoelectric layer 950 is located on the electrode layer 940 and the intermediate layer 920, covering the cavity 930, wherein the piezoelectric layer 950 includes a first side 951 and a second side opposite to the first side 951 Two sides 953, the electrode layer 940 and the intermediate
  • the composite support layer 983 thickens the medium between the electrode layer 940 and the edge extension layer 981 to reduce the edge capacitance between the electrode layer 940 and the edge extension layer 981
  • the composite support layer 987 thickens the medium between the electrode layer 940 and the edge extension layer 985, reduces the edge capacitance between the electrode layer 940 and the edge extension layer 985, thereby improving the The electromechanical coupling coefficient of a resonant device.
  • edge structure 970 and the composite structure 980 form a reflective structure located outside the electrode layer 960, so as to reflect sound waves in the resonance region, block leaky waves, and increase the Q value.
  • the material of the substrate 910 includes but is not limited to at least one of the following: silicon, silicon carbide, glass, gallium arsenide, gallium nitride, and ceramics.
  • the material of the intermediate layer 920 includes but is not limited to at least one of the following: polymer, insulating dielectric, and polysilicon.
  • the polymer includes but is not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), and polyimide.
  • the insulating dielectric includes but is not limited to at least one of the following: aluminum nitride, silicon dioxide, silicon nitride, and titanium oxide.
  • the material of the electrode layer 940 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the piezoelectric layer 950 is a flat layer and also covers the upper surface side of the middle layer 920 .
  • the material of the piezoelectric layer 950 includes but is not limited to at least one of the following: aluminum nitride, aluminum alloy nitride, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate , Lead magnesium niobate - lead titanate.
  • the piezoelectric layer 950 includes a plurality of crystal grains, and the multiple crystal grains include a first crystal grain and a second crystal grain, wherein the first crystal grain and the second crystal grain are any two of the plurality of crystal grains.
  • crystal orientations, crystal planes, etc. of crystal grains can be represented based on a coordinate system.
  • the first grain can be expressed based on a first three-dimensional coordinate system
  • the second grain can be expressed based on a second three-dimensional coordinate system
  • the first three-dimensional coordinate system includes at least The first coordinate axis and the third coordinate axis along the third direction
  • the second three-dimensional coordinate system includes at least the second coordinate axis along the second direction and the fourth coordinate axis along the fourth direction
  • the first The coordinate axis corresponds to the height of the first crystal grain
  • the second coordinate axis corresponds to the height of the second crystal grain.
  • the first direction is the same as or opposite to the second direction. It should be noted that the first direction and the second direction being the same means: the angle between the vector along the first direction and the vector along the second direction includes 0 degrees to 5 degrees; the second direction A direction opposite to the second direction means: the angle between the vector along the first direction and the vector along the second direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an ac three-dimensional coordinate system, wherein, the first coordinate axis is the first c-axis, and the third coordinate axis is the first a-axis;
  • the second The three-dimensional coordinate system is an ac three-dimensional coordinate system, the second coordinate axis is the second c-axis, and the fourth coordinate axis is the second a-axis, wherein the direction of the first c-axis and the second c-axis same or opposite.
  • the first three-dimensional coordinate system further includes a fifth coordinate axis along a fifth direction
  • the second three-dimensional coordinate system further includes a sixth coordinate axis along a sixth direction.
  • the first direction is the same or opposite to the second direction
  • the third direction is the same or opposite to the fourth direction.
  • the third direction is the same as the fourth direction, which means: the angle between the vector along the third direction and the vector along the fourth direction includes 0 degrees to 5 degrees;
  • the opposite of the three directions and the fourth direction means: the angle range between the vector along the third direction and the vector along the fourth direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an xyz three-dimensional coordinate system, wherein the first coordinate axis is the first z-axis, the third coordinate axis is the first y-axis, and the fifth The coordinate axis is the first x-axis;
  • the second three-dimensional coordinate system is an xyz three-dimensional coordinate system, the second coordinate axis is the second z-axis, the fourth coordinate axis is the second y-axis, and the sixth coordinate axis is the second x-axis.
  • the first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in the same direction.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in the same direction.
  • the piezoelectric layer 950 includes a plurality of crystal grains, and the rocking curve half-maximum width of the crystal formed by the multiple crystal grains is less than 2.5 degrees.
  • forming the piezoelectric layer 950 on a plane can make the piezoelectric layer 950 not include obviously diverted crystal grains, thereby improving the electromechanical coupling coefficient of the resonant device and the Q value of the resonant device.
  • the material of the electrode layer 960 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the portion of the electrode layer 940 that overlaps with the electrode layer 960 is located in the cavity 930; the portion of the electrode 960 that overlaps with the electrode 940 is located above the cavity 930, corresponding to The cavity 930 .
  • the edge structure 970 includes an edge surrounding layer located on the second side 953 and above the piezoelectric layer 950, the edge surrounding layer is electrically connected to the electrode layer 960; and an edge support Layer, located on the second side 953, located on the piezoelectric layer 950, located between the piezoelectric layer 950 and the edge surrounding layer, the edge support layer is connected to the electrode layer 960, the The edge surrounding layer overlaps with the edge supporting layer.
  • the material of the edge surrounding layer is different from that of the edge support layer. In another embodiment, the material of the edge surround layer is the same as the material of the edge support layer.
  • the material of the edge surrounding layer includes metal, and the material of the edge supporting layer includes non-metallic material.
  • the material of the edge surrounding layer includes metal, and the medium of the edge supporting layer includes air, that is, an air layer.
  • the material of the edge surrounding layer includes metal, and the medium of the edge support layer includes vacuum, ie, a vacuum layer.
  • the material of the edge surround layer includes metal, and the material of the edge support layer includes metal.
  • the thickness of the composite structure 980 is greater than the thickness of the edge structure 970 . In another embodiment, the thickness of the composite structure on the piezoelectric layer is equal to the thickness of the edge structure on the piezoelectric layer. In another embodiment, the thickness of the composite structure on the piezoelectric layer is less than the thickness of the edge structures on the piezoelectric layer.
  • the material of the edge extension layer 981 includes metal.
  • the material of the edge extension layer 981 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the medium of the composite support layer 983 includes non-metallic materials.
  • the medium of the composite support layer 983 includes but is not limited to at least one of the following: silicon dioxide, silicon carbide, silicon oxyfluoride, and polymer.
  • the polymer includes but not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), polyimide.
  • the medium of the composite support layer in the composite structure on the piezoelectric layer may be a vacuum, ie a vacuum layer.
  • the medium of the composite support layer in the composite structure on the piezoelectric layer may be air, ie an air layer.
  • the material of the edge extension layer 985 includes metal.
  • the material of the edge extension layer 985 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the medium of the composite support layer 987 includes non-metallic materials.
  • the medium of the composite support layer 987 includes but is not limited to at least one of the following: silicon dioxide, silicon carbide, silicon oxyfluoride, and polymer.
  • the polymer includes but not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), polyimide.
  • the medium of the composite support layer in the composite structure on the piezoelectric layer may be a vacuum, ie a vacuum layer.
  • the medium of the composite support layer in the composite structure on the piezoelectric layer may be air, ie an air layer.
  • the edge extension layer 981 and the edge extension layer 985 have no overlap. In this embodiment, the edge extension layer 981 and the edge extension layer 985 are located on both sides of the electrode layer 960 .
  • the width of the first overlapping portion is equal to the width of the edge structure 970
  • the width of the second overlapping portion is equal to the width of the edge structure 970 .
  • Fig. 9b is a schematic top view of a BAW resonator device 900 according to an embodiment of the present invention.
  • the edge structure 970 is ring-shaped.
  • the edge structure 970 is octagonal.
  • edge structures of other shapes known to those skilled in the art, such as hexagons and pentagons may also be applied to the embodiments of the present invention.
  • the composite structure 980 is adjacent to both sides of the edge structure 970, wherein the edge extension layer 981 is adjacent to the first side, and the edge extension layer 985 is adjacent to the second side, so The first side and the second side are respectively located at two ends of the electrode layer 960 .
  • Fig. 10a is a schematic structural diagram of section A of a BAW resonator device 1000 according to an embodiment of the present invention.
  • an embodiment of the present invention provides a bulk acoustic wave resonator device 1000 comprising: a substrate 1010; an intermediate layer 1020 located on the substrate 1010, and the upper surface side of the intermediate layer 1020 includes a cavity 1030 and a groove 1031, wherein, the groove 1031 is located on one side of the cavity 1030 and communicates with the cavity 1030, the depth of the groove 1031 is smaller than the depth of the cavity 1030; the electrode layer 1040 is located in the In the cavity 1030; the edge structure 1050 is located in the cavity 1030, and the electrode layer 1040 is located inside the edge structure 1050 (that is, toward the side of the central axis of the BAW resonator device 1000); the composite structure 1060 , located outside the edge structure 1050 (that is, pointing to the side opposite to the central axis of the BAW resonator device 1000), the first end of the composite structure 1060 is located in the cavity 1030, and the composite structure 1060 The second end opposite to the first
  • the composite support layer 1063 thickens the medium between the electrode layer 1080 and the edge extension layer 1061 to reduce the edge capacitance between the electrode layer 1080 and the edge extension layer 1061
  • the composite support layer 1067 thickens the medium between the electrode layer 1080 and the edge extension layer 1065, reduces the edge capacitance between the electrode layer 1080 and the edge extension layer 1065, thereby improving the The electromechanical coupling coefficient of a resonant device.
  • edge structure 1050 and the composite structure 1060 form a reflective structure, which is located outside the electrode layer 1040, so as to reflect sound waves in the resonance region, block leaky waves, and increase the Q value.
  • the material of the substrate 1010 includes but is not limited to at least one of the following: silicon, silicon carbide, glass, gallium arsenide, gallium nitride, and ceramics.
  • the material of the intermediate layer 1020 includes but is not limited to at least one of the following: polymer, insulating dielectric, and polysilicon.
  • the polymer includes but is not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), and polyimide.
  • the insulating dielectric includes but is not limited to at least one of the following: aluminum nitride, silicon dioxide, silicon nitride, and titanium oxide.
  • the material of the electrode layer 1040 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the edge structure 1050 includes an edge surrounding layer located in the cavity 1030, the edge surrounding layer electrically connected to the electrode layer 1040; and an edge support layer located in the cavity 1030, located in the On the edge surrounding layer, the edge supporting layer is connected to the electrode layer 1040, and the edge surrounding layer overlaps with the edge supporting layer.
  • the material of the edge surrounding layer is different from that of the edge supporting layer. In another embodiment, the material of the edge surround layer is the same as the material of the edge support layer.
  • the material of the edge surrounding layer includes metal, and the material of the edge supporting layer includes non-metallic material.
  • the material of the edge surrounding layer includes metal, and the medium of the edge supporting layer includes air, that is, an air layer.
  • the material of the edge surrounding layer includes metal, and the medium of the edge support layer includes vacuum, ie, a vacuum layer.
  • the material of the edge surround layer includes metal, and the material of the edge support layer includes metal.
  • the thickness of the composite structure 1060 is greater than the thickness of the edge structure 1050 . In another embodiment, the thickness of the composite structure under the piezoelectric layer is equal to the thickness of the edge structure under the piezoelectric layer. In another embodiment, the thickness of the composite structure under the piezoelectric layer is less than the thickness of the edge structure under the piezoelectric layer.
  • the material of the edge extension layer 1061 includes metal.
  • the material of the edge extension layer 1061 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the medium of the composite support layer 1063 includes non-metallic materials.
  • the medium of the composite support layer 1063 includes but is not limited to at least one of the following: silicon dioxide, silicon carbide, silicon oxyfluoride, and polymer.
  • the polymer includes but not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), polyimide.
  • the medium of the first composite support layer in the composite structure under the piezoelectric layer may be a vacuum, ie a vacuum layer.
  • the medium of the first composite support layer in the composite structure under the piezoelectric layer may be air, ie an air layer.
  • the material of the edge extension layer 1065 includes metal.
  • the material of the edge extension layer 1065 includes but not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium.
  • the medium of the composite support layer 1067 includes non-metallic materials.
  • the medium of the composite support layer 1067 includes but is not limited to at least one of the following: silicon dioxide, silicon carbide, silicon oxyfluoride, and polymer.
  • the polymer includes but not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), polyimide.
  • the medium of the second composite support layer in the composite structure under the piezoelectric layer may be a vacuum, ie a vacuum layer.
  • the medium of the second composite support layer in the composite structure under the piezoelectric layer may be air, ie an air layer.
  • the edge extension layer 1061 and the edge extension layer 1065 have no overlap. In this embodiment, the edge extension layer 1061 and the edge extension layer 1065 are located on both sides of the electrode layer 1040 .
  • the piezoelectric layer 1070 is a flat layer and also covers the upper surface side of the intermediate layer 1020 .
  • the material of the piezoelectric layer 1070 includes but is not limited to at least one of the following: aluminum nitride, aluminum alloy nitride, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate , Lead magnesium niobate - lead titanate.
  • the piezoelectric layer 1070 includes a plurality of crystal grains, and the multiple crystal grains include a first crystal grain and a second crystal grain, wherein the first crystal grain and the second crystal grain are any two of the plurality of crystal grains.
  • crystal orientations, crystal planes, etc. of crystal grains can be represented based on a coordinate system.
  • the first grain can be expressed based on a first three-dimensional coordinate system
  • the second grain can be expressed based on a second three-dimensional coordinate system
  • the first three-dimensional coordinate system includes at least The first coordinate axis and the third coordinate axis along the third direction
  • the second three-dimensional coordinate system includes at least the second coordinate axis along the second direction and the fourth coordinate axis along the fourth direction
  • the first The coordinate axis corresponds to the height of the first crystal grain
  • the second coordinate axis corresponds to the height of the second crystal grain.
  • the first direction is the same as or opposite to the second direction. It should be noted that the first direction and the second direction being the same means: the angle between the vector along the first direction and the vector along the second direction includes 0 degrees to 5 degrees; the second direction A direction opposite to the second direction means: the angle between the vector along the first direction and the vector along the second direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an ac three-dimensional coordinate system, wherein, the first coordinate axis is the first c-axis, and the third coordinate axis is the first a-axis;
  • the second The three-dimensional coordinate system is an ac three-dimensional coordinate system, the second coordinate axis is the second c-axis, and the fourth coordinate axis is the second a-axis, wherein the direction of the first c-axis and the second c-axis same or opposite.
  • the first three-dimensional coordinate system further includes a fifth coordinate axis along a fifth direction
  • the second three-dimensional coordinate system further includes a sixth coordinate axis along a sixth direction.
  • the first direction is the same or opposite to the second direction
  • the third direction is the same or opposite to the fourth direction.
  • the third direction is the same as the fourth direction, which means: the angle between the vector along the third direction and the vector along the fourth direction includes 0 degrees to 5 degrees;
  • the opposite of the three directions and the fourth direction means: the angle range between the vector along the third direction and the vector along the fourth direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an xyz three-dimensional coordinate system, wherein the first coordinate axis is the first z-axis, the third coordinate axis is the first y-axis, and the fifth The coordinate axis is the first x-axis;
  • the second three-dimensional coordinate system is an xyz three-dimensional coordinate system, the second coordinate axis is the second z-axis, the fourth coordinate axis is the second y-axis, and the sixth coordinate axis is the second x-axis.
  • the first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in the same direction.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in the same direction.
  • the piezoelectric layer 1070 includes a plurality of crystal grains, and the rocking curve half-maximum width of the crystal formed by the multiple crystal grains is less than 2.5 degrees.
  • forming the piezoelectric layer 1070 on a plane can make the piezoelectric layer 1070 not include obviously diverted crystal grains, thereby improving the electromechanical coupling coefficient of the resonant device and the Q value of the resonant device.
  • the material of the electrode layer 1080 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the portion of the electrode layer 1040 that overlaps with the electrode layer 1080 is located in the cavity 1030; the portion of the electrode 1080 that overlaps with the electrode 1040 is located above the cavity 1030, corresponding to The cavity 1030 .
  • the width of the first overlapping portion is equal to the width of the edge structure 1050
  • the width of the second overlapping portion is equal to the width of the edge structure 1050 .
  • Fig. 10b is a schematic top view of a BAW resonator device 1000 according to an embodiment of the present invention.
  • the edge structure 1050 is ring-shaped.
  • the edge structure 1050 is octagonal.
  • edge structures of other shapes known to those skilled in the art, such as hexagons and pentagons may also be applied to the embodiments of the present invention.
  • the composite structure 1060 is adjacent to the four sides of the edge structure 1050, wherein the edge extension layer 1061 is adjacent to the first side and the second side, and the edge extension layer 1065 is adjacent to the third side Adjacent to the fourth side, the first side and the second side are located at the first end of the electrode layer 1040, and the third side and the fourth side are located at the second end of the electrode layer 1040 .
  • Fig. 11a is a schematic structural diagram of section A of a BAW resonator device 1100 according to an embodiment of the present invention.
  • an embodiment of the present invention provides a bulk acoustic wave resonator device 1100 comprising: a substrate 1110; an intermediate layer 1120 located on the substrate 1110, and the upper surface side of the intermediate layer 1120 includes a cavity 1130 and a groove 1131, wherein, the groove 1131 is located on one side of the cavity 1130 and communicates with the cavity 1130, the depth of the groove 1131 is smaller than the depth of the cavity 1130; the electrode layer 1140 is located in the In the cavity 1130; the edge structure 1150 is located in the cavity 1130, and the electrode layer 1140 is located inside the edge structure 1150 (ie, pointing to the side of the central axis of the BAW resonator device 1100); the composite structure 1160 , located outside the edge structure 1150 (that is, pointing to the side opposite to the central axis of the bulk acoustic wave resonator device 1100), the first end of the composite structure 1160 is connected to the edge structure 1150, and the
  • the composite support layer 1163 overlaps with the edge extension layer 1161; the piezoelectric layer 1170 is located on the edge extension layer 1161.
  • the electrode layer 1140, the edge structure 1150, the composite support layer 1163 and the intermediate layer 1120 cover the cavity 1130, wherein the piezoelectric layer 1170 includes a first side 1171 and the first
  • the second side 1173 opposite to the side 1171, the electrode layer 1140, the edge structure 1150, the composite structure 1160 and the intermediate layer 1120 are located on the first side 1171;
  • the electrode layer 1180 is located on the second side 1173, located on the piezoelectric layer 1170, the edge structure 1150 and the electrode layer 1180 have overlapping portions, and the edge extension layer 1161 and the composite support layer 1163 have a first overlapping portion with the electrode layer 1180
  • the edge structure 1151 is located on the second side 1173 and on the piezoelectric layer 1170, the electrode layer 1180 is located inside the edge structure 1151, and the edge structure 1151 and the electrode layer 1140
  • the edge structure 1151 is connected, the composite support layer 1193 overlaps with the edge extension layer 1191, and the edge extension layer 1191 and the composite support layer 1193 overlap with the
  • the electrode layer 1140 has a second overlapping portion.
  • the composite support layer 1163 thickens the medium between the electrode layer 1180 and the edge extension layer 1161 to reduce the edge capacitance between the electrode layer 1180 and the edge extension layer 1161
  • the composite support layer 1193 thickens the medium between the electrode layer 1140 and the edge extension layer 1191, reduces the edge capacitance between the electrode layer 1140 and the edge extension layer 1191, thereby improving the The electromechanical coupling coefficient of a resonant device.
  • edge structure 1150 and the composite structure 1160 form a first reflective structure located outside the electrode layer 1140
  • edge structure 1151 and the composite structure 1190 form a second reflective structure located on the electrode layer 1180, so as to reflect the sound wave in the resonance area, block the leakage wave, and improve the Q value.
  • the material of the substrate 1110 includes but is not limited to at least one of the following: silicon, silicon carbide, glass, gallium arsenide, gallium nitride, and ceramics.
  • the material of the intermediate layer 1120 includes but is not limited to at least one of the following: polymer, insulating dielectric, and polysilicon.
  • the polymer includes but is not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), and polyimide.
  • the insulating dielectric includes but is not limited to at least one of the following: aluminum nitride, silicon dioxide, silicon nitride, and titanium oxide.
  • the material of the electrode layer 1140 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the edge structure 1150 includes a first edge surrounding layer located in the cavity 1130, the first edge surrounding layer electrically connected to the electrode layer 1140; and a first edge supporting layer located in the cavity In 1130, located on the first edge surrounding layer, the first edge supporting layer is connected to the electrode layer 1140, and the first edge surrounding layer overlaps with the first edge supporting layer.
  • the material of the first edge surrounding layer is different from that of the first edge support layer. In another embodiment, the material of the first edge surround layer is the same as that of the first edge support layer.
  • the material of the first edge surrounding layer includes metal, and the material of the first edge support layer includes non-metallic material.
  • the material of the first edge surrounding layer includes metal, and the medium of the first edge supporting layer includes air, that is, an air layer.
  • the material of the first edge surrounding layer includes metal, and the medium of the first edge support layer includes vacuum, ie, a vacuum layer.
  • the material of the first edge surround layer includes metal, and the material of the first edge support layer includes metal.
  • the thickness of the composite structure 1160 is greater than the thickness of the edge structure 1150 . In another embodiment, the thickness of the composite structure under the piezoelectric layer is equal to the thickness of the edge structure under the piezoelectric layer. In another embodiment, the thickness of the composite structure under the piezoelectric layer is less than the thickness of the edge structure under the piezoelectric layer.
  • the material of the edge extension layer 1161 includes metal.
  • the material of the edge extension layer 1061 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the medium of the composite support layer 1163 includes non-metallic materials.
  • the medium of the composite support layer 1163 includes but is not limited to at least one of the following: silicon dioxide, silicon carbide, silicon oxyfluoride, and polymer.
  • the polymer includes but not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), polyimide.
  • the medium of the composite support layer in the composite structure under the piezoelectric layer may be a vacuum, ie a vacuum layer.
  • the medium of the composite support layer in the composite structure under the piezoelectric layer may be air, ie an air layer.
  • the piezoelectric layer 1170 is a flat layer and also covers the upper surface side of the middle layer 1120 .
  • the material of the piezoelectric layer 1170 includes but is not limited to at least one of the following: aluminum nitride, aluminum alloy nitride, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate , Lead magnesium niobate - lead titanate.
  • the piezoelectric layer 1170 includes a plurality of crystal grains, and the multiple crystal grains include a first crystal grain and a second crystal grain, wherein the first crystal grain and the second crystal grain are any two of the plurality of crystal grains.
  • crystal orientations, crystal planes, etc. of crystal grains can be represented based on a coordinate system.
  • the first grain can be expressed based on a first three-dimensional coordinate system
  • the second grain can be expressed based on a second three-dimensional coordinate system
  • the first three-dimensional coordinate system includes at least The first coordinate axis and the third coordinate axis along the third direction
  • the second three-dimensional coordinate system includes at least the second coordinate axis along the second direction and the fourth coordinate axis along the fourth direction
  • the first The coordinate axis corresponds to the height of the first crystal grain
  • the second coordinate axis corresponds to the height of the second crystal grain.
  • the first direction is the same as or opposite to the second direction. It should be noted that the first direction and the second direction being the same means: the angle between the vector along the first direction and the vector along the second direction includes 0 degrees to 5 degrees; the second direction A direction opposite to the second direction means: the angle between the vector along the first direction and the vector along the second direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an ac three-dimensional coordinate system, wherein, the first coordinate axis is the first c-axis, and the third coordinate axis is the first a-axis;
  • the second The three-dimensional coordinate system is an ac three-dimensional coordinate system, the second coordinate axis is the second c-axis, and the fourth coordinate axis is the second a-axis, wherein the direction of the first c-axis and the second c-axis same or opposite.
  • the first three-dimensional coordinate system further includes a fifth coordinate axis along a fifth direction
  • the second three-dimensional coordinate system further includes a sixth coordinate axis along a sixth direction.
  • the first direction is the same or opposite to the second direction
  • the third direction is the same or opposite to the fourth direction.
  • the third direction is the same as the fourth direction, which means: the angle between the vector along the third direction and the vector along the fourth direction includes 0 degrees to 5 degrees;
  • the opposite of the three directions and the fourth direction means: the angle range between the vector along the third direction and the vector along the fourth direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an xyz three-dimensional coordinate system, wherein the first coordinate axis is the first z-axis, the third coordinate axis is the first y-axis, and the fifth The coordinate axis is the first x-axis;
  • the second three-dimensional coordinate system is an xyz three-dimensional coordinate system, the second coordinate axis is the second z-axis, the fourth coordinate axis is the second y-axis, and the sixth coordinate axis is the second x-axis.
  • the first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in the same direction.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in the same direction.
  • the piezoelectric layer 1170 includes a plurality of crystal grains, and the half-maximum width of the rocking curve of the crystal formed by the multiple crystal grains is less than 2.5 degrees.
  • forming the piezoelectric layer 1170 on a plane can make the piezoelectric layer 1170 not include obviously diverted crystal grains, thereby improving the electromechanical coupling coefficient of the resonant device and the Q value of the resonant device.
  • the material of the electrode layer 1180 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the portion of the electrode layer 1140 that overlaps with the electrode layer 1180 is located in the cavity 1130; the portion of the electrode 1180 that overlaps with the electrode 1140 is located above the cavity 1130, corresponding to The cavity 1130 .
  • the edge structure 1151 includes a second edge surrounding layer located on the second side 1173 and above the piezoelectric layer 1170 , the second edge surrounding layer is electrically connected to the electrode layer 1180 and a second edge support layer, located on the second side 1173, on the piezoelectric layer 1170, between the piezoelectric layer 1170 and the second edge surrounding layer, the second edge support Layers are connected to the electrode layer 1180, and the second edge surrounding layer and the second edge supporting layer are overlapped.
  • the material of the second edge surrounding layer is different from that of the second edge supporting layer. In another embodiment, the material of the second edge surround layer is the same as the material of the second edge support layer.
  • the material of the second edge surrounding layer includes metal, and the material of the second edge support layer includes non-metallic material.
  • the material of the second edge surrounding layer includes metal, and the medium of the second edge support layer includes air, ie an air layer.
  • the material of the second edge surround layer includes metal, and the medium of the second edge support layer includes vacuum, ie, a vacuum layer.
  • the material of the second edge surround layer includes metal, and the material of the second edge support layer includes metal.
  • the thickness of the composite structure 1190 is greater than the thickness of the edge structure 1151 . In another embodiment, the thickness of the composite structure on the piezoelectric layer is equal to the thickness of the edge structure on the piezoelectric layer. In another embodiment, the thickness of the composite structure on the piezoelectric layer is less than the thickness of the edge structures on the piezoelectric layer.
  • the material of the edge extension layer 1191 includes metal.
  • the material of the edge extension layer 1191 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the medium of the composite support layer 1193 includes non-metallic materials.
  • the medium of the composite support layer 1193 includes but is not limited to at least one of the following: silicon dioxide, silicon carbide, silicon oxyfluoride, and polymer.
  • the polymer includes but not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), polyimide.
  • the medium of the composite support layer in the composite structure on the piezoelectric layer may be a vacuum, ie a vacuum layer.
  • the medium of the composite support layer in the composite structure on the piezoelectric layer may be air, ie an air layer.
  • the composite structure 1160 and the composite structure 1190 have no overlap. In this embodiment, the composite structure 1160 and the composite structure 1190 are located on both sides of the electrode layer 1140 .
  • the width of the first overlapping portion is equal to the width of the edge structure 1150
  • the width of the second overlapping portion is equal to the width of the edge structure 1151 .
  • Fig. 11b is a schematic top view of a BAW resonator device 1100 according to an embodiment of the present invention.
  • the edge structure 1150 and the edge structure 1151 are partially overlapped to form a surrounding structure.
  • the surrounding structure is octagonal. It should be noted that surrounding structures of other shapes known to those skilled in the art, such as hexagons and pentagons, may also be applied to the embodiments of the present invention.
  • the composite structure 1160 is adjacent to one side of the edge structure 1150
  • the composite structure 1190 is adjacent to one side of the edge structure 1151 .
  • Fig. 12a is a schematic structural diagram of section A of a BAW resonator device 1200 according to an embodiment of the present invention.
  • an embodiment of the present invention provides a bulk acoustic wave resonator device 1200 comprising: a substrate 1210; an intermediate layer 1220 located on the substrate 1210, and the upper surface side of the intermediate layer 1220 includes a cavity 1230 and a groove 1231, wherein, the groove 1231 is located on one side of the cavity 1230 and communicates with the cavity 1230, the depth of the groove 1231 is smaller than the depth of the cavity 1230; the electrode layer 1240, the electrode The first end 1241 of the layer 1240 is located in the cavity 1230, and the second end 1243 of the electrode layer 1240 is located in the groove 1231, wherein the depth of the groove 1231 is equal to the thickness of the electrode layer 1240
  • the piezoelectric layer 1250 is located on the electrode layer 1240 and the intermediate layer 1220 and covers the cavity 1230, wherein the piezoelectric layer 1250 includes a first side 1251 and a first side 1251 opposite to the first side 1251 Two sides 1253, the electrode layer 1240
  • the extension part also includes an edge extension layer 1277, located on the second side 1253, above the piezoelectric layer 1250, electrically connected to the edge part 1271, and a composite support layer 1279, located on the second side 1253, located on the piezoelectric layer 1250, located between the piezoelectric layer 1250 and the edge extension layer 1277, connected to the edge portion 1271, the composite support layer 1279 coincides with the edge extension layer 1277,
  • the edge extension layer 1277 and the composite support layer 1279 and the electrode layer 124 0 has a second overlap.
  • the composite support layer 1275 thickens the medium between the electrode layer 1240 and the edge extension layer 1273 to reduce the edge capacitance between the electrode layer 1240 and the edge extension layer 1273
  • the composite support layer 1279 thickens the medium between the electrode layer 1240 and the edge extension layer 1277, reduces the edge capacitance between the electrode layer 1240 and the edge extension layer 1277, thereby improving the The electromechanical coupling coefficient of a resonant device.
  • edge portion 1271 and the extension portion form a reflective structure, which is located outside the electrode layer 1260, so as to reflect sound waves in the resonance region, block leakage waves, and increase the Q value.
  • the material of the substrate 1210 includes but is not limited to at least one of the following: silicon, silicon carbide, glass, gallium arsenide, gallium nitride, and ceramics.
  • the material of the intermediate layer 1220 includes but is not limited to at least one of the following: polymer, insulating dielectric, and polysilicon.
  • the polymer includes but is not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), and polyimide.
  • the insulating dielectric includes but is not limited to at least one of the following: aluminum nitride, silicon dioxide, silicon nitride, and titanium oxide.
  • the material of the electrode layer 1240 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the piezoelectric layer 1250 is a flat layer and also covers the upper surface side of the middle layer 1220 .
  • the material of the piezoelectric layer 1250 includes but is not limited to at least one of the following: aluminum nitride, aluminum alloy nitride, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate , Lead magnesium niobate - lead titanate.
  • the piezoelectric layer 1250 includes a plurality of crystal grains, and the multiple crystal grains include a first crystal grain and a second crystal grain, wherein the first crystal grain and the second crystal grain are any two of the plurality of crystal grains.
  • crystal orientations, crystal planes, etc. of crystal grains can be represented based on a coordinate system.
  • the first grain can be expressed based on a first three-dimensional coordinate system
  • the second grain can be expressed based on a second three-dimensional coordinate system
  • the first three-dimensional coordinate system includes at least The first coordinate axis and the third coordinate axis along the third direction
  • the second three-dimensional coordinate system includes at least the second coordinate axis along the second direction and the fourth coordinate axis along the fourth direction
  • the first The coordinate axis corresponds to the height of the first crystal grain
  • the second coordinate axis corresponds to the height of the second crystal grain.
  • the first direction is the same as or opposite to the second direction. It should be noted that the first direction and the second direction being the same means: the angle between the vector along the first direction and the vector along the second direction includes 0 degrees to 5 degrees; the second direction A direction opposite to the second direction means: the angle between the vector along the first direction and the vector along the second direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an ac three-dimensional coordinate system, wherein, the first coordinate axis is the first c-axis, and the third coordinate axis is the first a-axis;
  • the second The three-dimensional coordinate system is an ac three-dimensional coordinate system, the second coordinate axis is the second c-axis, and the fourth coordinate axis is the second a-axis, wherein the direction of the first c-axis and the second c-axis same or opposite.
  • the first three-dimensional coordinate system further includes a fifth coordinate axis along a fifth direction
  • the second three-dimensional coordinate system further includes a sixth coordinate axis along a sixth direction.
  • the first direction is the same or opposite to the second direction
  • the third direction is the same or opposite to the fourth direction.
  • the third direction is the same as the fourth direction, which means: the angle between the vector along the third direction and the vector along the fourth direction includes 0 degrees to 5 degrees;
  • the opposite of the three directions and the fourth direction means: the angle range between the vector along the third direction and the vector along the fourth direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an xyz three-dimensional coordinate system, wherein the first coordinate axis is the first z-axis, the third coordinate axis is the first y-axis, and the fifth The coordinate axis is the first x-axis;
  • the second three-dimensional coordinate system is an xyz three-dimensional coordinate system, the second coordinate axis is the second z-axis, the fourth coordinate axis is the second y-axis, and the sixth coordinate axis is the second x-axis.
  • the first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in the same direction.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in the same direction.
  • the piezoelectric layer 1250 includes a plurality of crystal grains, and the rocking curve half-maximum width of the crystal formed by the multiple crystal grains is less than 2.5 degrees.
  • forming the piezoelectric layer 1250 on a plane can make the piezoelectric layer 1250 not include obviously diverted crystal grains, thereby improving the electromechanical coupling coefficient of the resonant device and the Q value of the resonant device.
  • the material of the electrode layer 1260 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the portion of the electrode layer 1240 that overlaps with the electrode layer 1260 is located in the cavity 1230; the portion of the electrode 1260 that overlaps with the electrode 1240 is located above the cavity 1230, corresponding to The cavity 1230 .
  • the edge portion 1271 includes an edge surrounding layer located on the second side 1253 and above the piezoelectric layer 1250, the edge surrounding layer is electrically connected to the electrode layer 1260; and an edge support Layer, located on the second side 1253, located on the piezoelectric layer 1250, located between the piezoelectric layer 1250 and the edge surrounding layer, the edge support layer is connected to the electrode layer 1260, the The edge surrounding layer overlaps with the edge supporting layer.
  • the material of the edge surrounding layer is different from that of the edge support layer. In another embodiment, the material of the edge surround layer is the same as the material of the edge support layer.
  • the material of the edge surrounding layer includes metal, and the material of the edge supporting layer includes non-metallic material.
  • the material of the edge surrounding layer includes metal, and the medium of the edge supporting layer includes air, that is, an air layer.
  • the material of the edge surrounding layer includes metal, and the medium of the edge support layer includes vacuum, ie, a vacuum layer.
  • the material of the edge surround layer includes metal, and the material of the edge support layer includes metal.
  • the thickness of the extension portion is equal to the thickness of the edge portion 1271 .
  • the material of the edge extension layer 1273 includes metal.
  • the material of the edge extension layer 1273 includes but not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium.
  • the medium of the composite support layer 1275 includes non-metallic materials.
  • the medium of the composite support layer 1275 includes but is not limited to at least one of the following: silicon dioxide, silicon carbide, silicon oxyfluoride, and polymer.
  • the polymer includes but not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), polyimide.
  • the medium of the first composite support layer of the extension on the piezoelectric layer may be a vacuum, ie a vacuum layer.
  • the medium of the first composite support layer of the extension on the piezoelectric layer may be air, ie an air layer.
  • the thickness of the composite support layer 1275 is greater than the thickness of the edge support layer. In another embodiment, the thickness of the first composite support layer of the extension portion is equal to the thickness of the edge support layer of the edge portion. In another embodiment, the thickness of the first composite support layer of the extension portion is less than the thickness of the edge support layer of the edge portion.
  • the material of the edge extension layer 1277 includes metal.
  • the material of the edge extension layer 1277 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the medium of the composite support layer 1279 includes non-metallic materials.
  • the medium of the composite support layer 1279 includes but is not limited to at least one of the following: silicon dioxide, silicon carbide, silicon oxyfluoride, and polymer.
  • the polymer includes but not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), polyimide.
  • the medium of the second composite support layer of the extension on the piezoelectric layer may be a vacuum, ie a vacuum layer.
  • the medium of the second composite support layer of the extension on the piezoelectric layer may be air, ie an air layer.
  • the thickness of the composite support layer 1279 is greater than the thickness of the edge support layer. In another embodiment, the thickness of the second composite support layer of the extension portion is equal to the thickness of the edge support layer of the edge portion. In another embodiment, the thickness of the second composite support layer of the extension portion is less than the thickness of the edge support layer of the edge portion.
  • the edge extension layer 1273 and the edge extension layer 1277 have no overlap. In this embodiment, the edge extension layer 1273 and the edge extension layer 1277 are located on both sides of the electrode layer 1260 .
  • the width of the first overlapping portion is equal to the width of the edge portion 1271
  • the width of the second overlapping portion is equal to the width of the edge portion 1271
  • Fig. 12b is a schematic top view of a BAW resonator device 1200 according to an embodiment of the present invention.
  • the edge portion 1271 is ring-shaped.
  • the edge portion 1271 is octagonal.
  • edge portions of other shapes known to those skilled in the art, such as hexagons and pentagons may also be applied to the embodiments of the present invention.
  • the extension part is adjacent to two sides of the edge part 1271, wherein the edge extension layer 1273 is adjacent to the first side, the edge extension layer 1277 is adjacent to the second side, and the The first side and the second side are respectively located at two ends of the electrode layer 1260 .
  • Fig. 13a is a schematic structural diagram of section A of a BAW resonator device 1300 according to an embodiment of the present invention.
  • an embodiment of the present invention provides a bulk acoustic wave resonator device 1300 comprising: a substrate 1310; an intermediate layer 1320 located on the substrate 1310, and the upper surface side of the intermediate layer 1320 includes a cavity 1330 and a groove 1331, wherein, the groove 1331 is located on one side of the cavity 1330 and communicates with the cavity 1330, the depth of the groove 1331 is smaller than the depth of the cavity 1330; the electrode layer 1340 is located in the In the cavity 1330; the composite structure 1350, the composite structure 1350 includes: an edge portion 1351 located in the cavity 1330, the electrode layer 1340 is located inside the edge portion 1351 (that is, directed to the BAW resonator device 1300 central axis); an extension (unmarked), located outside the edge portion 1351 (that is, pointing to the side opposite to the central axis of the bulk acoustic wave resonator device 1300), the first end of the extension Located in the cavity 1330, the second
  • the edge extension layer 1353 overlaps; the extension part also includes an edge extension layer 1357, located in the cavity 1330, electrically connected to the edge portion 1351, and a composite support layer 1359, located on the edge extension layer 1357, located on the The cavity 1330 is connected to the edge portion 1351, the composite support layer 1359 overlaps with the edge extension layer 1357; the piezoelectric layer 1360 is located on the electrode layer 1340, the edge portion 1351, the composite support layer Layer 1355, the composite support layer 1359 and the intermediate layer 1320 cover the cavity 1330, wherein the piezoelectric layer 1360 includes a first side 1361 and a second side 1363 opposite to the first side 1361 , the electrode layer 1340, the composite structure 1350 and the intermediate layer 1320 are located on the first side 1361; the electrode layer 1370 is located on the second side 1363 and on the piezoelectric layer 1360, and the edge The portion 1351 and the electrode layer 1370 have overlapping portions, the edge extension layer 1353 and the composite support layer 1355 have a
  • the composite support layer 1355 thickens the medium between the electrode layer 1370 and the edge extension layer 1353 to reduce the edge capacitance between the electrode layer 1370 and the edge extension layer 1353
  • the composite support layer 1359 thickens the medium between the electrode layer 1370 and the edge extension layer 1357, reduces the edge capacitance between the electrode layer 1370 and the edge extension layer 1357, thereby improving the The electromechanical coupling coefficient of a resonant device.
  • edge portion 1351 and the extension portion form a reflective structure, which is located outside the electrode layer 1340 , so as to reflect sound waves in the resonance region, block leaky waves, and increase the Q value.
  • the material of the substrate 1310 includes but is not limited to at least one of the following: silicon, silicon carbide, glass, gallium arsenide, gallium nitride, and ceramics.
  • the material of the intermediate layer 1320 includes but is not limited to at least one of the following: polymer, insulating dielectric, and polysilicon.
  • the polymer includes but is not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), and polyimide.
  • the insulating dielectric includes but is not limited to at least one of the following: aluminum nitride, silicon dioxide, silicon nitride, and titanium oxide.
  • the material of the electrode layer 1340 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium.
  • the edge part 1351 includes an edge surrounding layer, located in the cavity 1330, and the edge surrounding layer is electrically connected to the electrode layer 1340; and an edge support layer, located in the cavity 1330, located in the On the edge surrounding layer, the edge supporting layer is connected to the electrode layer 1340 , and the edge surrounding layer overlaps with the edge supporting layer.
  • the material of the edge surrounding layer is different from that of the edge support layer. In another embodiment, the material of the edge surround layer is the same as the material of the edge support layer.
  • the material of the edge surrounding layer includes metal, and the material of the edge supporting layer includes non-metallic material.
  • the material of the edge surrounding layer includes metal, and the medium of the edge supporting layer includes air, that is, an air layer.
  • the material of the edge surrounding layer includes metal, and the medium of the edge support layer includes vacuum, ie, a vacuum layer.
  • the material of the edge surround layer includes metal, and the material of the edge support layer includes metal.
  • the thickness of the extension part is equal to the thickness of the edge part 1351 .
  • the material of the edge extension layer 1353 includes metal.
  • the material of the edge extension layer 1353 includes but not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, beryllium.
  • the medium of the composite support layer 1355 includes non-metallic materials.
  • the medium of the composite support layer 1355 includes but is not limited to at least one of the following: silicon dioxide, silicon carbide, silicon oxyfluoride, and polymer.
  • the polymer includes but not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), polyimide.
  • the medium of the first composite support layer of the extension under the piezoelectric layer may be a vacuum, ie a vacuum layer.
  • the medium of the first composite support layer of the extension below the piezoelectric layer may be air, ie an air layer.
  • the thickness of the composite support layer 1355 is greater than the thickness of the edge support layer. In another embodiment, the thickness of the first composite support layer of the extension portion is equal to the thickness of the edge support layer of the edge portion. In another embodiment, the thickness of the first composite support layer of the extension portion is less than the thickness of the edge support layer of the edge portion.
  • the material of the edge extension layer 1357 includes metal.
  • the material of the edge extension layer 1357 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the medium of the composite support layer 1359 includes non-metallic materials.
  • the medium of the composite support layer 1359 includes but is not limited to at least one of the following: silicon dioxide, silicon carbide, silicon oxyfluoride, and polymer.
  • the polymer includes but not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), polyimide.
  • the medium of the second composite support layer of the extension under the piezoelectric layer may be a vacuum, ie a vacuum layer.
  • the medium of the second composite support layer of the extension part under the piezoelectric layer may be air, ie an air layer.
  • the thickness of the composite support layer 1359 is greater than the thickness of the edge support layer. In another embodiment, the thickness of the second composite support layer of the extension portion is equal to the thickness of the edge support layer of the edge portion. In another embodiment, the thickness of the second composite support layer of the extension portion is less than the thickness of the edge support layer of the edge portion.
  • the edge extension layer 1353 and the edge extension layer 1357 have no overlap. In this embodiment, the edge extension layer 1353 and the edge extension layer 1357 are located on both sides of the electrode layer 1340 .
  • the piezoelectric layer 1360 is a flat layer and also covers the upper surface side of the middle layer 1320 .
  • the material of the piezoelectric layer 1360 includes but is not limited to at least one of the following: aluminum nitride, aluminum alloy nitride, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate , Lead magnesium niobate - lead titanate.
  • the piezoelectric layer 1360 includes a plurality of crystal grains, and the multiple crystal grains include a first crystal grain and a second crystal grain, wherein the first crystal grain and the second crystal grain are any two of the plurality of crystal grains.
  • crystal orientations, crystal planes, etc. of crystal grains can be represented based on a coordinate system.
  • the first grain can be expressed based on a first three-dimensional coordinate system
  • the second grain can be expressed based on a second three-dimensional coordinate system
  • the first three-dimensional coordinate system includes at least The first coordinate axis and the third coordinate axis along the third direction
  • the second three-dimensional coordinate system includes at least the second coordinate axis along the second direction and the fourth coordinate axis along the fourth direction
  • the first The coordinate axis corresponds to the height of the first crystal grain
  • the second coordinate axis corresponds to the height of the second crystal grain.
  • the first direction is the same as or opposite to the second direction. It should be noted that the first direction and the second direction being the same means: the angle between the vector along the first direction and the vector along the second direction includes 0 degrees to 5 degrees; the second direction A direction opposite to the second direction means: the angle between the vector along the first direction and the vector along the second direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an ac three-dimensional coordinate system, wherein, the first coordinate axis is the first c-axis, and the third coordinate axis is the first a-axis;
  • the second The three-dimensional coordinate system is an ac three-dimensional coordinate system, the second coordinate axis is the second c-axis, and the fourth coordinate axis is the second a-axis, wherein the direction of the first c-axis and the second c-axis same or opposite.
  • the first three-dimensional coordinate system further includes a fifth coordinate axis along a fifth direction
  • the second three-dimensional coordinate system further includes a sixth coordinate axis along a sixth direction.
  • the first direction is the same or opposite to the second direction
  • the third direction is the same or opposite to the fourth direction.
  • the third direction is the same as the fourth direction, which means: the angle between the vector along the third direction and the vector along the fourth direction includes 0 degrees to 5 degrees;
  • the opposite of the three directions and the fourth direction means: the angle range between the vector along the third direction and the vector along the fourth direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an xyz three-dimensional coordinate system, wherein the first coordinate axis is the first z-axis, the third coordinate axis is the first y-axis, and the fifth The coordinate axis is the first x-axis;
  • the second three-dimensional coordinate system is an xyz three-dimensional coordinate system, the second coordinate axis is the second z-axis, the fourth coordinate axis is the second y-axis, and the sixth coordinate axis is the second x-axis.
  • the first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in the same direction.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in the same direction.
  • the piezoelectric layer 1360 includes a plurality of crystal grains, and the half-maximum width of the rocking curve of the crystal formed by the multiple crystal grains is less than 2.5 degrees.
  • forming the piezoelectric layer 1360 on a plane can make the piezoelectric layer 1360 not include obviously diverted crystal grains, thereby improving the electromechanical coupling coefficient of the resonant device and the Q value of the resonant device.
  • the material of the electrode layer 1370 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the portion of the electrode layer 1340 that overlaps with the electrode layer 1370 is located in the cavity 1330; the portion of the electrode 1370 that overlaps with the electrode 1340 is located above the cavity 1330, corresponding to cavity 1330 .
  • the width of the first overlapping portion is equal to the width of the edge portion 1351
  • the width of the second overlapping portion is equal to the width of the edge portion 1351 .
  • Fig. 13b is a schematic top view of a BAW resonator device 1300 according to an embodiment of the present invention.
  • the edge portion 1351 is ring-shaped. In this embodiment, the edge portion 1351 is octagonal. It should be noted that edge portions of other shapes known to those skilled in the art, such as hexagons, pentagons, etc., may also be applied to the embodiments of the present invention.
  • the extension part is adjacent to the six sides of the edge part 1351, wherein the edge extension layer 1353 is adjacent to the first side, the second side and the third side, and the edge extension layer 1357 Adjacent to the fourth side, the fifth side and the sixth side, the first side, the second side and the third side are located at the first end of the electrode layer 1340, the fourth side, the The fifth side and the sixth side are located at the second end of the electrode layer 1340 .
  • Fig. 14a is a schematic structural diagram of section A of a BAW resonator device 1400 according to an embodiment of the present invention.
  • an embodiment of the present invention provides a bulk acoustic wave resonator device 1400 comprising: a substrate 1410; an intermediate layer 1420 located on the substrate 1410, and the upper surface side of the intermediate layer 1420 includes a cavity 1430 and a groove 1431, wherein the groove 1431 is located on one side of the cavity 1430 and communicates with the cavity 1430, the depth of the groove 1431 is smaller than the depth of the cavity 1430; the electrode layer 1440 is located in the In the cavity 1430; the composite structure 1450, the composite structure 1450 includes: an edge portion 1451 located in the cavity 1430, the electrode layer 1440 is located inside the edge portion 1451 (that is, directed to the bulk acoustic wave resonator device 1400 central axis); the first extension part (unmarked), located outside the edge part 1451 (that is, pointing to the side opposite to the central axis direction of the bulk acoustic wave resonator device 1400), the first extension part The first end of the
  • the first extension includes an edge extension layer 1453, electrically connected to the edge portion 1451, and a composite support layer 1455, located on the edge extension layer 1453, connected to the edge portion 1451, the The composite support layer 1455 overlaps with the edge extension layer 1453;
  • the piezoelectric layer 1460 is located on the electrode layer 1440, the edge portion 1451, the composite support layer 1455 and the intermediate layer 1420, covering the cavity 1430, wherein the piezoelectric layer 1460 includes a first side 1461 and a second side 1463 opposite to the first side 1461, the electrode layer 1440, the composite structure 1450 and the intermediate layer 1420 are located on the second side One side 1461; electrode layer 1470, located on the second side 1463, located on the piezoelectric layer 1460, the edge portion 1451 and the electrode layer 1470 have overlapping portions, the edge extension layer 1453 and the composite
  • the support layer 1455 and the electrode layer 1470 have a first overlapping portion;
  • a composite structure 1480, the composite structure 1480 includes:
  • the composite support layer 1455 thickens the medium between the electrode layer 1470 and the edge extension layer 1453 to reduce the edge capacitance between the electrode layer 1470 and the edge extension layer 1453
  • the composite support layer 1485 thickens the medium between the electrode layer 1440 and the edge extension layer 1483, reduces the edge capacitance between the electrode layer 1440 and the edge extension layer 1483, thereby improving the The electromechanical coupling coefficient of a resonant device.
  • edge portion 1451 and the first extension form a first reflective structure located outside the electrode layer 1440
  • edge portion 1481 and the second extension form a second reflective structure located on the outer side of the electrode layer 1440.
  • the outer side of the electrode layer 1470 is used to reflect sound waves in the resonance region, block leaky waves, and increase the Q value.
  • the material of the substrate 1410 includes but is not limited to at least one of the following: silicon, silicon carbide, glass, gallium arsenide, gallium nitride, and ceramics.
  • the material of the intermediate layer 1420 includes but is not limited to at least one of the following: polymer, insulating dielectric, and polysilicon.
  • the polymer includes but is not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), and polyimide.
  • the insulating dielectric includes but is not limited to at least one of the following: aluminum nitride, silicon dioxide, silicon nitride, and titanium oxide.
  • the material of the electrode layer 1440 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the edge portion 1451 includes a first edge surrounding layer located in the cavity 1130, the first edge surrounding layer electrically connected to the electrode layer 1440; and a first edge supporting layer located in the cavity In 1130, on the first edge surrounding layer, the first edge supporting layer is connected to the electrode layer 1440, and the first edge surrounding layer overlaps with the first edge supporting layer.
  • the material of the first edge surrounding layer is different from that of the first edge support layer. In another embodiment, the material of the first edge surround layer is the same as that of the first edge support layer.
  • the material of the first edge surrounding layer includes metal, and the material of the first edge support layer includes non-metallic material.
  • the material of the first edge surrounding layer includes metal, and the medium of the first edge supporting layer includes air, that is, an air layer.
  • the material of the first edge surrounding layer includes metal, and the medium of the first edge support layer includes vacuum, ie, a vacuum layer.
  • the material of the first edge surround layer includes metal, and the material of the first edge support layer includes metal.
  • the thickness of the first extension part is equal to the thickness of the edge part 1451 .
  • the material of the edge extension layer 1453 includes metal.
  • the material of the edge extension layer 1453 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the medium of the composite support layer 1455 includes non-metallic materials.
  • the medium of the composite support layer 1455 includes but is not limited to at least one of the following: silicon dioxide, silicon carbide, silicon oxyfluoride, and polymer.
  • the polymer includes but not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), polyimide.
  • the medium of the first composite support layer of the first extension under the piezoelectric layer may be a vacuum, that is, a vacuum layer.
  • the medium of the first composite support layer of the first extension under the piezoelectric layer may be air, ie an air layer.
  • the thickness of the composite support layer 1455 is greater than the thickness of the first edge support layer. In another embodiment, the thickness of the first composite support layer of the first extension is equal to the thickness of the first edge support layer of the first edge portion. In another embodiment, the thickness of the first composite support layer of the first extension is less than the thickness of the first edge support layer of the first edge portion.
  • the piezoelectric layer 1460 is a flat layer and also covers the upper surface side of the middle layer 1420 .
  • the material of the piezoelectric layer 1460 includes but is not limited to at least one of the following: aluminum nitride, aluminum alloy nitride, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate , Lead magnesium niobate - lead titanate.
  • the piezoelectric layer 1460 includes a plurality of crystal grains, and the multiple crystal grains include a first crystal grain and a second crystal grain, wherein the first crystal grain and the second crystal grain are any two of the plurality of crystal grains.
  • crystal orientations, crystal planes, etc. of crystal grains can be represented based on a coordinate system.
  • the first grain can be expressed based on a first three-dimensional coordinate system
  • the second grain can be expressed based on a second three-dimensional coordinate system
  • the first three-dimensional coordinate system includes at least The first coordinate axis and the third coordinate axis along the third direction
  • the second three-dimensional coordinate system includes at least the second coordinate axis along the second direction and the fourth coordinate axis along the fourth direction
  • the first The coordinate axis corresponds to the height of the first crystal grain
  • the second coordinate axis corresponds to the height of the second crystal grain.
  • the first direction is the same as or opposite to the second direction. It should be noted that the first direction and the second direction being the same means: the angle between the vector along the first direction and the vector along the second direction includes 0 degrees to 5 degrees; the second direction A direction opposite to the second direction means: the angle between the vector along the first direction and the vector along the second direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an ac three-dimensional coordinate system, wherein, the first coordinate axis is the first c-axis, and the third coordinate axis is the first a-axis;
  • the second The three-dimensional coordinate system is an ac three-dimensional coordinate system, the second coordinate axis is the second c-axis, and the fourth coordinate axis is the second a-axis, wherein the direction of the first c-axis and the second c-axis same or opposite.
  • the first three-dimensional coordinate system further includes a fifth coordinate axis along a fifth direction
  • the second three-dimensional coordinate system further includes a sixth coordinate axis along a sixth direction.
  • the first direction is the same or opposite to the second direction
  • the third direction is the same or opposite to the fourth direction.
  • the third direction is the same as the fourth direction, which means: the angle between the vector along the third direction and the vector along the fourth direction includes 0 degrees to 5 degrees;
  • the opposite of the three directions and the fourth direction means: the angle range between the vector along the third direction and the vector along the fourth direction includes 175 degrees to 180 degrees.
  • the first three-dimensional coordinate system is an xyz three-dimensional coordinate system, wherein the first coordinate axis is the first z-axis, the third coordinate axis is the first y-axis, and the fifth The coordinate axis is the first x-axis;
  • the second three-dimensional coordinate system is an xyz three-dimensional coordinate system, the second coordinate axis is the second z-axis, the fourth coordinate axis is the second y-axis, and the sixth coordinate axis is the second x-axis.
  • the first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in the same direction.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in the same direction, and the first y-axis and the second y-axis point in opposite directions.
  • first z-axis and the second z-axis point in opposite directions, and the first y-axis and the second y-axis point in the same direction.
  • the piezoelectric layer 1460 includes a plurality of crystal grains, and the half-maximum width of the rocking curve of the crystal formed by the multiple crystal grains is less than 2.5 degrees.
  • forming the piezoelectric layer 1460 on a plane can make the piezoelectric layer 1460 not include obviously diverted crystal grains, thereby improving the electromechanical coupling coefficient of the resonant device and the Q value of the resonant device.
  • the material of the electrode layer 1470 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the portion of the electrode layer 1440 that overlaps with the electrode layer 1470 is located in the cavity 1430; the portion of the electrode 1470 that overlaps with the electrode 1440 is located above the cavity 1430, corresponding to The cavity 1430 .
  • the edge part 1481 includes a second edge surrounding layer located on the second side 1463 and above the piezoelectric layer 1460, and the second edge surrounding layer is electrically connected to the electrode layer 1470 and a second edge support layer, located on the second side 1463, on the piezoelectric layer 1460, between the piezoelectric layer 1460 and the second edge surrounding layer, the second edge support layer is connected to the electrode layer 1470, and the second edge surrounding layer and the second edge supporting layer are overlapped.
  • the material of the second edge surrounding layer is different from that of the second edge supporting layer. In another embodiment, the material of the second edge surround layer is the same as the material of the second edge support layer.
  • the material of the second edge surrounding layer includes metal, and the material of the second edge support layer includes non-metallic material.
  • the material of the second edge surrounding layer includes metal, and the medium of the second edge support layer includes air, ie an air layer.
  • the material of the second edge surround layer includes metal, and the medium of the second edge support layer includes vacuum, ie, a vacuum layer.
  • the material of the second edge surround layer includes metal, and the material of the second edge support layer includes metal.
  • the thickness of the second extension portion is equal to the thickness of the edge portion 1481 .
  • the material of the edge extension layer 1483 includes metal.
  • the material of the edge extension layer 1483 includes but is not limited to at least one of the following: molybdenum, ruthenium, tungsten, platinum, iridium, aluminum, and beryllium.
  • the medium of the composite support layer 1485 includes non-metallic materials.
  • the medium of the composite support layer 1485 includes but is not limited to at least one of the following: silicon dioxide, silicon carbide, silicon oxyfluoride, and polymer.
  • the polymer includes but not limited to at least one of the following: benzocyclobutene (ie, BCB), photosensitive epoxy photoresist (eg, SU-8), polyimide.
  • the medium of the second composite support layer of the second extension on the piezoelectric layer may be a vacuum, ie a vacuum layer.
  • the medium of the second composite support layer of the second extension on the piezoelectric layer may be air, ie an air layer.
  • the thickness of the composite support layer 1485 is greater than the thickness of the second edge support layer. In another embodiment, the thickness of the second composite support layer of the second extension is equal to the thickness of the second edge support layer of the second edge portion. In another embodiment, the thickness of the second composite support layer of the second extension is less than the thickness of the second edge support layer of the second edge portion.
  • first extension part and the second extension part have no overlap.
  • first extension portion and the second extension portion are located on both sides of the overlapping portion of the electrode layer 1440 and the electrode layer 1470 .
  • the width of the first overlapping portion is equal to the width of the edge portion 1451
  • the width of the second overlapping portion is equal to the width of the edge portion 1481 .
  • Fig. 14b is a schematic top view of a BAW resonator device 1400 according to an embodiment of the present invention.
  • the edge portion 1451 and the edge portion 1481 are partially overlapped to form a surrounding structure.
  • the surrounding structure is octagonal. It should be noted that surrounding structures of other shapes known to those skilled in the art, such as hexagons and pentagons, may also be applied to the embodiments of the present invention.
  • the first extension part is adjacent to one side of the edge part 1451
  • the second extension part is adjacent to one side of the edge part 1481 .
  • FIG. 15 is a schematic structural diagram of a wireless communication device 1500 .
  • the wireless communication device 1500 includes: a radio frequency front-end device 1510, a baseband processing device 1530 and an antenna 1550, the first end of the radio frequency front-end device 1510 is connected to the baseband processing device 1530, the radio frequency front-end device The second end of 1510 is connected to the antenna 1550 .
  • the radio frequency front-end device 1510 includes: a filtering device 1511, a filtering device 1513, a multiplexing device 1515, a power amplification device 1517 and a low noise amplification device 1519; wherein, the filtering device 1511 is electrically connected to the power amplification device 1517 ; Wherein, the filtering device 1513 is electrically connected to the low-noise amplification device 1519; wherein, the multiplexing device 1515 includes at least one transmitting filtering device (not shown) and at least one receiving filtering device (not shown).
  • the filtering device 1511 includes at least one bulk acoustic wave resonance device provided in one of the above embodiments
  • the filtering device 1513 includes at least one bulk acoustic wave resonance device provided in one of the above embodiments.
  • the at least one transmitting filtering device includes at least one bulk acoustic wave resonance device provided in one of the above embodiments
  • the at least one receiving filtering device includes at least one bulk acoustic wave resonance device provided in one of the above embodiments.
  • the bulk acoustic wave resonator device provided by the embodiment of the present invention includes a composite structure electrically connected to the first electrode layer or the edge structure of the first electrode, the composite structure includes an edge extension layer and a composite support layer, the The composite support layer thickens the dielectric thickness between the edge extension layer and the second electrode layer, thereby reducing the edge capacitance and improving the electromechanical coupling coefficient.
  • the edge structure and composite structure can form a reflection structure, which is located outside the electrode layer, so as to reflect the sound wave in the resonance area, block the leakage wave, and improve the Q value.

Abstract

本实施提供一种体声波谐振装置、滤波装置及射频前端装置，体声波谐振装置包括：包括空腔的第一层；第一电极层，至少一端位于空腔；压电层，位于第一电极层上，覆盖空腔，包括第一侧及相对的第二侧，第一电极层位于第一侧；第二电极层，位于第二侧，位于压电层上，第二电极层上的与第一电极层的重合部位于空腔上方，对应空腔；第一复合结构，位于第一侧，接触压电层，与第一电极层水平方向上相邻，第一复合结构靠近第一电极层的第一端位于空腔内，远离第一电极层的第一端水平方向上相对的第二端嵌入第一层，包括第一边缘延伸层及第一支撑层，第一支撑层位于压电层与第一边缘延伸层之间，用于降低边缘容抗，提升机电耦合系数及阻隔漏波，提高Q值。

Description

体声波谐振装置、滤波装置及射频前端装置
本申请要求于2021年9月8日提交中国专利局、申请号为2021110419331、发明名称为“体声波谐振装置、滤波装置及射频前端装置”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及半导体技术领域，具体而言，本发明涉及一种体声波谐振装置、滤波装置及射频前端装置。
背景技术
无线通信设备的射频(Radio Frequency，RF)前端芯片包括功率放大器、天线开关、射频滤波器、多工器和低噪声放大器等。其中，射频滤波器包括压电声表面波(Surface Acoustic Wave，SAW)滤波器、压电体声波(Bulk Acoustic Wave，BAW)滤波器、微机电系统(Micro-Electro-Mechanical System，MEMS)滤波器、集成无源装置(Integrated Passive Devices，IPD)滤波器等。
SAW谐振器和BAW谐振器的品质因数值(Q值)较高，由SAW谐振器和BAW谐振器制作成低插入损耗、高带外抑制的射频滤波器，即SAW滤波器和BAW滤波器，是目前手机、基站等无线通信设备使用的主流射频滤波器。其中，Q值是谐振器的品质因数值，定义为中心频率除以谐振器3dB带宽。SAW滤波器的使用频率一般为0.4GHz至2.7GHz，BAW滤波器的使用频率一般为0.7GHz至7GHz。
与SAW谐振器相比，BAW谐振器的性能更好，但是 由于工艺步骤复杂，BAW谐振器的制造成本比SAW谐振器高。然而，当无线通信技术逐步演进，所使用的频段越来越多，同时随着载波聚合等频段叠加使用技术的应用，无线频段之间的相互干扰变得愈发严重。高性能的BAW技术可以解决频段间的相互干扰问题。随着5G时代的到来，无线移动网络引入了更高的通信频段，当前只有BAW技术可以解决高频段的滤波问题。
图1示出了一种BAW滤波器电路100，包括由多个BAW谐振器组成的梯形电路，其中，f1、f2、f3、f4分别表示4种不同的频率。每个BAW谐振器内，谐振器压电层两侧的金属电极产生交替正负电压，压电层通过交替正负电压产生声波，该谐振器内的声波沿垂直于压电层的方向传播。为了形成谐振，声波需要在上金属电极的上表面和下金属电极的下表面产生全反射，以形成驻声波。声波反射的条件是与上金属电极的上表面和下金属电极的下表面接触区域的声阻抗与金属电极的声阻抗有较大差别。
薄膜体声波谐振器(Film Bulk Acoustic wave Resonator，FBAR)是一种可以把声波能量局限在器件内的BAW谐振器，该谐振器的谐振区上方是空气或真空，下方存在一个空腔。空气和真空的声阻抗与金属电极的声阻抗差别较大，声波可以在上金属电极的上表面和下金属电极的下表面全反射，形成驻波。
图2示出了一种FBAR 200的剖面A结构示意图。所述FBAR 200包括：基底201，所述基底201包括空腔203；电极层205(即，下电极层)，位于所述基底201及所述空腔203上，覆盖所述空腔203；压电层207，位于所述基底201上，覆盖所述电极层205，所述压电层207包括凸起部207a，位于所述电极层205上方；以及电极层209(即，上电极层)，位于所述压电层207上，所述电极层209包括凸起部209a，位于所述凸起部207a上，其中，谐振区211外侧，所述电极层205与所述电极层209之间存在边缘容抗(fringe capacitance)213，造成声能损耗，从而降低谐振器的机电耦合系数 (electro-mechanical coupling factor)及Q值。
发明内容
本发明解决的问题是提供一种体声波谐振装置，可以降低边缘容抗，提升机电耦合系数及阻隔漏波，提高Q值。
为解决上述问题，本发明实施例提供一种体声波谐振装置，包括：第一层，所述第一层包括空腔；第一电极层，所述第一电极层的至少一端位于所述空腔内；压电层，位于所述第一电极层上，覆盖所述空腔，所述压电层包括第一侧及与所述第一侧垂直方向上相对的第二侧，所述第一电极层位于所述第一侧；第二电极层，位于所述第二侧，位于所述压电层上，所述第二电极层上的与所述第一电极层的重合部位于所述空腔上方，对应所述空腔；以及第一复合结构，位于所述第一侧，接触所述压电层，与所述第一电极层水平方向上相邻，所述第一复合结构靠近所述第一电极层的第一端位于所述空腔内，所述第一复合结构远离所述第一电极层的所述第一端水平方向上相对的第二端嵌入所述第一层，所述第一复合结构包括第一边缘延伸层及第一支撑层，所述第一支撑层位于所述压电层与所述第一边缘延伸层之间，用于降低边缘容抗。
在一些实施例中，所述第一边缘延伸层的材料包括金属。
在一些实施例中，所述第一支撑层的介质包括但不限于以下之一：非金属材料、空气、真空。
在一些实施例中，所述第一电极层呈多边形，所述第一复合结构与所述第一电极层的至少一边相邻。
在一些实施例中，所述体声波谐振装置还包括：第一边缘结构，位于所述第一侧，接触所述压电层，所述第一边缘结构包括第三侧和所述第三侧水平方向上相对的第四侧，所述第一电极层位于 所述第三侧，所述第一复合结构位于所述第四侧。
在一些实施例中，所述第一边缘结构至少部分包围所述第一电极层。
在一些实施例中，所述第一电极层位于所述第一边缘结构的内侧，所述第一复合结构位于所述第一边缘结构的外侧。需要说明的是，所述内侧表示指向所述体声波谐振装置中轴线方向的一侧，所述外侧与所述内侧水平方向上相对。
在一些实施例中，所述第一边缘结构包括第一边缘围边层，所述第一边缘围边层的材料包括金属，所述第一边缘围边层连接所述第一电极层，所述第一边缘围边层还连接所述第一边缘延伸层。
在一些实施例中，所述第一边缘结构还包括第一边缘支撑层，接触所述压电层，所述第一边缘支撑层位于所述压电层与所述第一边缘围边层之间，用于降低引入所述第一边缘围边层产生的寄生谐振的谐振频率。
在一些实施例中，所述第一边缘支撑层的介质包括以下之一：非金属材料、空气、真空。
在一些实施例中，所述第一边缘结构与第二电极层具有第一重合部。
在一些实施例中，所述第一复合结构与所述第二电极层具有第二重合部，所述第二重合部的宽度等于所述第一边缘结构的宽度。
在一些实施例中，所述第一边缘结构呈多边形，所述第一复合结构与所述第一边缘结构的至少一边相邻。
在一些实施例中，所述第一复合结构还包括第一边缘部，所述第一边缘部包括第五侧和所述第五侧水平方向上相对的第六侧，所述第一电极层位于所述第五侧，所述第一边缘延伸层及所述第 一支撑层位于所述第六侧。
在一些实施例中，所述第一边缘部的厚度等于所述第一边缘延伸层和所述第一支撑层的厚度之和。
在一些实施例中，所述第一边缘部至少部分包围所述第一电极层。
在一些实施例中，所述第一电极层位于所述第一边缘部的内侧，所述第一边缘延伸层及所述第一支撑层位于所述第一边缘部的外侧。
在一些实施例中，所述第一边缘部与第二电极层具有第三重合部。
在一些实施例中，所述第一边缘延伸层及所述第一支撑层和所述第二电极层具有第四重合部，所述第四重合部的宽度等于所述第一边缘部的宽度。
在一些实施例中，所述第一边缘部呈多边形，所述第一边缘延伸层及所述第一支撑层与所述第一边缘部的至少一边相邻。
需要说明的是，复合结构电连接第一电极层或所述第一电极的边缘结构，所述复合结构包括边缘延伸层及复合支撑层，所述复合支撑层加厚所述边缘延伸层与第二电极层之间的介质厚度，从而降低边缘容抗，提升机电耦合系数及阻隔漏波，提高Q值。
本发明实施例还提供一种体声波谐振装置，包括：第一层，所述第一层包括空腔；第一电极层，所述第一电极层的至少一端位于所述空腔内；压电层，位于所述第一电极层上，覆盖所述空腔，所述压电层包括第一侧及与所述第一侧垂直方向上相对的第二侧，所述第一电极层位于所述第一侧；第二电极层，位于所述第二侧，位于所述压电层上，所述第二电极层上的与所述第一电极层的重合部位于所述空腔上方，对应所述空腔；以及第二复合结构，位于所述第二侧，接触所述压电层，与所述第二电极层水平方向上相邻，所述第二复合 结构与所述第一电极层无重合部或部分重合，所述第二复合结构包括第二边缘延伸层及第二支撑层，所述第二支撑层位于所述压电层与所述第二边缘延伸层之间，用于降低边缘容抗。
在一些实施例中，所述第二边缘延伸层的材料包括金属。
在一些实施例中，所述第二支撑层的介质包括以下之一：非金属材料、空气、真空。
在一些实施例中，所述第二电极层呈多边形，所述第二复合结构与所述第二电极层的至少一边相邻。
在一些实施例中，所述体声波谐振装置还包括：第二边缘结构，位于所述第二侧，接触所述压电层，所述第二边缘结构包括第三侧和所述第三侧水平方向上相对的第四侧，所述第二电极层位于所述第三侧，所述第二复合结构位于所述第四侧。
在一些实施例中，所述第二边缘结构至少部分包围所述第二电极层。
在一些实施例中，所述第二电极层位于所述第二边缘结构的内侧，所述第二复合结构位于所述第二边缘结构的外侧。
在一些实施例中，所述第二边缘结构包括第二边缘围边层，所述第二边缘围边层的材料包括金属，所述第二边缘围边层连接所述第二电极层，所述第二边缘围边层还连接所述第二边缘延伸层。
在一些实施例中，所述第二边缘结构还包括第二边缘支撑层，接触所述压电层，所述第二边缘支撑层位于所述压电层与所述第二边缘围边层之间，用于降低引入所述第二边缘围边层产生的寄生谐振的谐振频率。
在一些实施例中，所述第二边缘支撑层的介质包括以下之一：非金属材料、空气、真空。
在一些实施例中，所述第二边缘结构与第一电极层具有第一重合部。
在一些实施例中，所述第二复合结构与所述第一电极层具有第二重合部，所述第二重合部的宽度等于所述第二边缘结构的宽度。
在一些实施例中，所述第二边缘结构呈多边形，所述第二复合结构与所述第二边缘结构的至少一边相邻。
在一些实施例中，所述第二复合结构还包括第二边缘部，所述第二边缘部包括第五侧和所述第五侧水平方向上相对的第六侧，所述第二电极层位于所述第五侧，所述第二边缘延伸层及所述第二支撑层位于所述第六侧。
在一些实施例中，所述第二边缘部的厚度等于所述第二边缘延伸层和所述第二支撑层的厚度之和。
在一些实施例中，所述第二边缘部至少部分包围所述第二电极层。
在一些实施例中，所述第二电极层位于所述第二边缘部的内侧，所述第二边缘延伸层及所述第二支撑层位于所述第二边缘部的外侧。
在一些实施例中，所述第二边缘部与第一电极层具有第三重合部。
在一些实施例中，所述第二边缘延伸层及所述第二支撑层和所述第一电极层具有第四重合部，所述第四重合部的宽度等于所述第二边缘部的宽度。
在一些实施例中，所述第二边缘部呈多边形，所述第二边缘延伸层及所述第二支撑层与所述第二边缘部的至少一边相邻。
需要说明的是，复合结构电连接第二电极层或所述第二 电极层对应的边缘结构，所述复合结构包括边缘延伸层及复合支撑层，所述复合支撑层加厚所述边缘延伸层与第一电极层之间的介质厚度，从而降低边缘容抗，提升机电耦合系数及阻隔漏波，提高Q值。
在一些实施例中，所述第一层包括：中间层，所述中间层包括所述空腔，其中，所述中间层的材料包括但不限于以下至少之一：聚合物、绝缘电介质、多晶硅。
本发明实施例还提供一种滤波装置，包括但不限于：至少一个上述实施例其中之一提供的体声波谐振装置。
本发明实施例还提供一种射频前端装置，包括但不限于：功率放大装置与至少一个上述实施例提供的滤波装置；所述功率放大装置与所述滤波装置连接。
本发明实施例还提供一种射频前端装置，包括但不限于：低噪声放大装置与至少一个上述实施例提供的滤波装置；所述低噪声放大装置与所述滤波装置连接。
本发明实施例还提供一种射频前端装置，包括但不限于：多工装置，所述多工装置包括至少一个上述实施例提供的滤波装置。
附图说明
图1是一种BAW滤波器电路100的结构示意图；
图2是一种FBAR 200的剖面A结构示意图；
图3a是本发明实施例的一种体声波谐振装置300的剖面A结构示意图；
图3b是本发明实施例的一种体声波谐振装置300的声阻抗示意图；
图3c是本发明实施例的一种体声波谐振装置300的性 能示意图；
图3d是一种六方晶系晶粒的结构示意图；
图3e(i)是一种正交晶系晶粒的结构示意图；
图3e(ii)是一种四方晶系晶粒的结构示意图；
图3e(iii)是一种立方晶系晶粒的结构示意图；
图3f是本发明实施例的一种体声波谐振装置300的俯视结构示意图；
图4a是本发明实施例的一种体声波谐振装置400的剖面A结构示意图；
图4b是本发明实施例的一种体声波谐振装置400的俯视结构示意图；
图5a是本发明实施例的一种体声波谐振装置500的剖面A结构示意图；
图5b是本发明实施例的一种体声波谐振装置500的俯视结构示意图；
图6a是本发明实施例的一种体声波谐振装置600的剖面A结构示意图；
图6b是本发明实施例的一种体声波谐振装置600的声学阻抗示意图；
图6c是本发明实施例的一种体声波谐振装置600的俯视结构示意图；
图7a是本发明实施例的一种体声波谐振装置700的剖面A结构示意图；
图7b是本发明实施例的一种体声波谐振装置700的俯视结构示意图；
图8a是本发明实施例的一种体声波谐振装置800的剖面A结构示意图；
图8b是本发明实施例的一种体声波谐振装置800的俯视结构示意图；
图9a是本发明实施例的一种体声波谐振装置900的剖面A结构示意图；
图9b是本发明实施例的一种体声波谐振装置900的俯视结构示意图；
图10a是本发明实施例的一种体声波谐振装置1000的剖面A结构示意图；
图10b是本发明实施例的一种体声波谐振装置1000的俯视结构示意图；
图11a是本发明实施例的一种体声波谐振装置1100的剖面A结构示意图；
图11b是本发明实施例的一种体声波谐振装置1100的俯视结构示意图；
图12a是本发明实施例的一种体声波谐振装置1200的剖面A结构示意图；
图12b是本发明实施例的一种体声波谐振装置1200的俯视结构示意图；
图13a是本发明实施例的一种体声波谐振装置1300的剖面A结构示意图；
图13b是本发明实施例的一种体声波谐振装置1300的俯视结构示意图；
图14a是本发明实施例的一种体声波谐振装置1400的 剖面A结构示意图；
图14b是本发明实施例的一种体声波谐振装置1400的俯视结构示意图；
图15是一种无线通信装置1500的结构示意图。
具体实施方式
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。
在下面的描述中阐述了很多具体细节以便于充分理解本发明，但是本发明还可以采用其他不同于在此描述的其它方式来实施，因此本发明不受下面公开的具体实施例的限制。
如背景技术部分所述，在谐振区外侧，上电极层与下电极层之间存在边缘容抗，造成声能损耗，从而降低谐振器的机电耦合系数及Q值。
本发明的发明人发现在BAW谐振装置中包括复合结构，电连接第一电极层或所述第一电极的边缘结构，所述复合结构包括边缘延伸层及复合支撑层，所述复合支撑层加厚所述边缘延伸层与第二电极层之间的介质厚度，从而降低边缘容抗，提升机电耦合系数及阻隔漏波，提高Q值。此外，边缘结构和复合结构可以形成反射结构，位于电极层的外侧，从而实现反射谐振区内的声波，阻隔漏波，提升Q值。
本发明实施例提供一种体声波谐振装置，包括：第一层，所述第一层包括空腔；第一电极层，所述第一电极层的至少一端位于所述空腔内；压电层，位于所述第一电极层上，覆盖所述空腔，所述压电层包括第一侧及与所述第一侧垂直方向上相对的第二侧，所述第一电极层位于所述第一侧；第二电极层，位于所述第二侧，位于所述压电层上，所述第二电极层上的与所述第一电极层的重合部位于所述 空腔上方，对应所述空腔；以及第一复合结构，位于所述第一侧，接触所述压电层，与所述第一电极层水平方向上相邻，所述第一复合结构靠近所述第一电极层的第一端位于所述空腔内，所述第一复合结构远离所述第一电极层的所述第一端水平方向上相对的第二端嵌入所述第一层，所述第一复合结构包括第一边缘延伸层及第一支撑层，所述第一支撑层位于所述压电层与所述第一边缘延伸层之间，用于降低边缘容抗。
在一些实施例中，所述第一边缘延伸层的材料包括金属。
在一些实施例中，所述第一支撑层的介质包括但不限于以下之一：非金属材料、空气、真空。
在一些实施例中，所述第一电极层呈多边形，所述第一复合结构与所述第一电极层的至少一边相邻。
在一些实施例中，所述体声波谐振装置还包括：第一边缘结构，位于所述第一侧，接触所述压电层，所述第一边缘结构包括第三侧和所述第三侧水平方向上相对的第四侧，所述第一电极层位于所述第三侧，所述第一复合结构位于所述第四侧。
在一些实施例中，所述第一边缘结构至少部分包围所述第一电极层。
在一些实施例中，所述第一电极层位于所述第一边缘结构的内侧，所述第一复合结构位于所述第一边缘结构的外侧。需要说明的是，所述内侧表示指向所述体声波谐振装置中轴线方向的一侧，所述外侧与所述内侧相对。
在一些实施例中，所述第一边缘结构包括第一边缘围边层，所述第一边缘围边层的材料包括金属，所述第一边缘围边层连接所述第一电极层，所述第一边缘围边层还连接所述第一边缘延伸层。
在一些实施例中，所述第一边缘结构还包括第一边缘支 撑层，接触所述压电层，所述第一边缘支撑层位于所述压电层与所述第一边缘围边层之间。需要说明的是，边缘支撑层可以降低引入边缘围边层产生的寄生谐振的谐振频率，将寄生谐振移出主谐振区。
在一些实施例中，所述第一边缘支撑层的介质包括以下之一：非金属材料、空气、真空。
在一些实施例中，所述第一边缘结构与第二电极层具有第一重合部。
在一些实施例中，所述第一复合结构与所述第二电极层具有第二重合部，所述第二重合部的宽度等于所述第一边缘结构的宽度。
在一些实施例中，所述第一边缘结构呈多边形，所述第一复合结构与所述第一边缘结构的至少一边相邻。
在一些实施例中，所述第一复合结构还包括第一边缘部，所述第一边缘部包括第五侧和所述第五侧水平方向上相对的第六侧，所述第一电极层位于所述第五侧，所述第一边缘延伸层及所述第一支撑层位于所述第六侧。
在一些实施例中，所述第一边缘部的厚度等于所述第一边缘延伸层和所述第一支撑层的厚度之和。
在一些实施例中，所述第一边缘部至少部分包围所述第一电极层。
在一些实施例中，所述第一电极层位于所述第一边缘部的内侧，所述第一边缘延伸层及所述第一支撑层位于所述第一边缘部的外侧。
在一些实施例中，所述第一边缘部与第二电极层具有第三重合部。
在一些实施例中，所述第一边缘延伸层及所述第一支撑 层和所述第二电极层具有第四重合部，所述第四重合部的宽度等于所述第一边缘部的宽度。
在一些实施例中，所述第一边缘部呈多边形，所述第一边缘延伸层及所述第一支撑层与所述第一边缘部的至少一边相邻。
需要说明的是，复合结构电连接第一电极层或所述第一电极层对应的边缘结构，所述复合结构包括边缘延伸层及复合支撑层，所述复合支撑层加厚所述边缘延伸层与第二电极层之间的介质厚度，从而降低边缘容抗，提升机电耦合系数及阻隔漏波，提高Q值。
本发明实施例还提供一种体声波谐振装置，包括：第一层，所述第一层包括空腔；第一电极层，所述第一电极层的至少一端位于所述空腔内；压电层，位于所述第一电极层上，覆盖所述空腔，所述压电层包括第一侧及与所述第一侧垂直方向上相对的第二侧，所述第一电极层位于所述第一侧；第二电极层，位于所述第二侧，位于所述压电层上，所述第二电极层上的与所述第一电极层的重合部位于所述空腔上方，对应所述空腔；以及第二复合结构，位于所述第二侧，接触所述压电层，与所述第二电极层水平方向上相邻，所述第二复合结构与所述第一电极层无重合部或部分重合，所述第二复合结构包括第二边缘延伸层及第二支撑层，所述第二支撑层位于所述压电层与所述第二边缘延伸层之间，用于降低边缘容抗。
在一些实施例中，所述第二边缘延伸层的材料包括金属。
在一些实施例中，所述第二支撑层的介质包括以下之一：非金属材料、空气、真空。
在一些实施例中，所述第二电极层呈多边形，所述第二复合结构与所述第二电极层的至少一边相邻。
在一些实施例中，所述体声波谐振装置还包括：第二边缘结构，位于所述第二侧，接触所述压电层，所述第二边缘结构包括 第三侧和所述第三侧水平方向上相对的第四侧，所述第二电极层位于所述第三侧，所述第二复合结构位于所述第四侧。
在一些实施例中，所述第二边缘结构至少部分包围所述第二电极层。
在一些实施例中，所述第二电极层位于所述第二边缘结构的内侧，所述第二复合结构位于所述第二边缘结构的外侧。
在一些实施例中，所述第二边缘结构包括第二边缘围边层，所述第二边缘围边层的材料包括金属，所述第二边缘围边层连接所述第二电极层，所述第二边缘围边层还连接所述第二边缘延伸层。
在一些实施例中，所述第二边缘结构还包括第二边缘支撑层，接触所述压电层，所述第二边缘支撑层位于所述压电层与所述第二边缘围边层之间。需要说明的是，边缘支撑层可以降低引入边缘围边层产生的寄生谐振的谐振频率，将寄生谐振移出主谐振区。
在一些实施例中，所述第二边缘支撑层的介质包括以下之一：非金属材料、空气、真空。
在一些实施例中，所述第二边缘结构与第一电极层具有第一重合部。
在一些实施例中，所述第二复合结构与所述第一电极层具有第二重合部，所述第二重合部的宽度等于所述第二边缘结构的宽度。
在一些实施例中，所述第二边缘结构呈多边形，所述第二复合结构与所述第二边缘结构的至少一边相邻。
在一些实施例中，所述第二复合结构还包括第二边缘部，所述第二边缘部包括第五侧和所述第五侧水平方向上相对的第六侧，所述第二电极层位于所述第五侧，所述第二边缘延伸层及所述第二支撑层位于所述第六侧。
在一些实施例中，所述第二边缘部的厚度等于所述第二边缘延伸层和所述第二支撑层的厚度之和。
在一些实施例中，所述第二边缘部至少部分包围所述第二电极层。
在一些实施例中，所述第二电极层位于所述第二边缘部的内侧，所述第二边缘延伸层及所述第二支撑层位于所述第二边缘部的外侧。
在一些实施例中，所述第二边缘部与第一电极层具有第三重合部。
在一些实施例中，所述第二边缘延伸层及所述第二支撑层和所述第一电极层具有第四重合部，所述第四重合部的宽度等于所述第二边缘部的宽度。
在一些实施例中，所述第二边缘部呈多边形，所述第二边缘延伸层及所述第二支撑层与所述第二边缘部的至少一边相邻。
需要说明的是，复合结构电连接第二电极层或所述第二电极层对应的边缘结构，所述复合结构包括边缘延伸层及复合支撑层，所述复合支撑层加厚所述边缘延伸层与第一电极层之间的介质厚度，从而降低边缘容抗，提升机电耦合系数及阻隔漏波，提高Q值。
在一些实施例中，所述第一层包括：中间层，所述中间层包括所述空腔，其中，所述中间层的材料包括但不限于以下至少之一：聚合物、绝缘电介质、多晶硅。
本发明实施例还提供一种滤波装置，包括但不限于：至少一个上述实施例其中之一提供的体声波谐振装置。
本发明实施例还提供一种射频前端装置，包括但不限于：功率放大装置与至少一个上述实施例提供的滤波装置；所述功率放大装置与所述滤波装置连接。
本发明实施例还提供一种射频前端装置，包括但不限于：低噪声放大装置与至少一个上述实施例提供的滤波装置；所述低噪声放大装置与所述滤波装置连接。
本发明实施例还提供一种射频前端装置，包括但不限于：多工装置，所述多工装置包括至少一个上述实施例提供的滤波装置。
图3至图14示出了本发明的多个具体实施例，所述多个具体实施例采用不同结构的谐振装置，但是本发明还可以采用其他不同于在此描述的其他方式来实施，因此本发明不受下面公开的具体实施例的限制。
图3a是本发明实施例的一种体声波谐振装置300的剖面A结构示意图。
如图3a所示，本发明实施例提供一种体声波谐振装置300包括：基底310；中间层320，位于所述基底310上，所述中间层320的上表面侧包括空腔330和凹槽331，其中，所述凹槽331位于所述空腔330的一侧并和所述空腔330相通，所述凹槽331的深度小于所述空腔330的深度；电极层340，所述电极层340的第一端341位于所述空腔330内，所述电极层340的第二端343位于所述凹槽331内，其中，所述凹槽331的深度等于所述电极层340的厚度；压电层350，位于所述电极层340及所述中间层320上，覆盖所述空腔330，其中，所述压电层350包括第一侧351及所述第一侧351相对的第二侧353，所述电极层340及所述中间层320位于所述第一侧351；电极层360，位于所述第二侧353，位于所述压电层350上；以及复合结构370，位于所述第二侧353，位于所述压电层350上，连接所述电极层360，所述复合结构370包括边缘延伸层371，位于所述第二侧353，位于所述压电层350上方，电连接所述电极层360，及复合支撑层373，位于所述第二侧353，位于所述压电层350上，位于所述压电层350和所述边缘延伸层371之间，连接所述电极层 360，所述复合支撑层373与所述边缘延伸层371重合。
需要说明的是，所述复合支撑层373加厚所述电极层340和所述边缘延伸层371之间的介质，从而减小边缘容抗380，提升了谐振装置的机电耦合系数，其中，提升机电耦合系数可以增大所述谐振装置对应的滤波装置的通带带宽。此外，参见图3b，所述复合结构370所在区域C与所述电极层360所在的区域E的声阻抗差较无复合结构的情况下，两区域的声阻抗差更大，从而可以提高边缘横向声波的反射率，提升Q值。为了更直观地理解该有益效果，参见图3c(i)，导纳(admittance)曲线390表示无复合结构的第一BAW谐振装置的归一化导纳值，导纳曲线391表示包括复合结构的第二BAW谐振装置的归一化导纳值，所述导纳曲线391的谐振与反谐振之间的带宽大于所述导纳曲线390的谐振与反谐振之间的带宽；参见图3c(ii)，品质因数曲线393表示所述第一BAW谐振装置的归一化Q值，品质因数曲线395表示所述第二BAW谐振装置的归一化Q值。需要说明的是，图3c仅是示意性的，用于更直观地理解本发明实施例的有益效果，但并不等同本发明实施例的BAW谐振装置的实际性能。
本实施例中，所述基底310的材料包括但不限于以下至少之一：硅、碳化硅、玻璃、砷化镓、氮化镓、陶瓷。
本实施例中，所述中间层320的材料包括但不限于以下至少之一：聚合物、绝缘电介质、多晶硅。本实施例中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。本实施例中，所述绝缘电介质包括但不限于以下至少之一：氮化铝、二氧化硅、氮化硅、氧化钛。
本实施例中，所述电极层340的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述压电层350为平层，还覆盖所述中间层320的上表面侧。本实施例中，所述压电层350的材料包括但不 限于以下至少之一：氮化铝、氮化铝合金、氮化镓、氧化锌、钽酸锂、铌酸锂、锆钛酸铅、铌镁酸铅—钛酸铅。
本实施例中，所述压电层350包括多个晶粒，所述多个晶粒包括第一晶粒和第二晶粒，其中，所述第一晶粒和所述第二晶粒是所述多个晶粒中的任意两个晶粒。所属技术领域的技术人员知晓晶粒的晶向、晶面等可以基于坐标系表示。如图3d所示，对于六方晶系的晶粒，例如氮化铝晶粒，采用ac立体坐标系(包括a轴及c轴)表示。如图3e所示，对于(i)正交晶系(a≠b≠c)、(ii)四方晶系(a＝b≠c)、(iii)立方晶系(a＝b＝c)等的晶粒，采用xyz立体坐标系(包括x轴、y轴及z轴)表示。除上述两个实例，晶粒还可以基于其他所属技术领域的技术人员知晓的坐标系表示，因此本发明不受上述两个实例的限制。
本实施例中，所述第一晶粒可以基于第一立体坐标系表示，所述第二晶粒可以基于第二立体坐标系表示，其中，所述第一立体坐标系至少包括沿第一方向的第一坐标轴及沿第三方向第三坐标轴，所述第二立体坐标系至少包括沿第二方向的第二坐标轴及沿第四方向的第四坐标轴，其中，所述第一坐标轴对应所述第一晶粒的高，所述第二坐标轴对应所述第二晶粒的高。
本实施例中，所述第一方向和所述第二方向相同或相反。需要说明的是，所述第一方向和所述第二方向相同指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括0度至5度；所述第一方向和所述第二方向相反指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为ac立体坐标系，其中，所述第一坐标轴为第一c轴，所述第三坐标轴为第一a轴；所述第二立体坐标系为ac立体坐标系，所述第二坐标轴为第二c轴，所述第四坐标轴为第二a轴，其中，所述第一c轴和所述第二c轴的指向相同或相反。
在另一个实施例中，所述第一立体坐标系还包括沿第五方向的第五坐标轴，所述第二立体坐标系还包括沿第六方向的第六坐标轴。在另一个实施例中，所述第一方向和所述第二方向相同或相反，所述第三方向和所述第四方向相同或相反。需要说明的是，所述第三方向和所述第四方向相同指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括0度至5度；所述第三方向和所述第四方向相反指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为xyz立体坐标系，其中，所述第一坐标轴为第一z轴，所述第三坐标轴为第一y轴，所述第五坐标轴为第一x轴；所述第二立体坐标系为xyz立体坐标系，所述第二坐标轴为第二z轴，所述第四坐标轴为第二y轴，所述第六坐标轴为第二x轴。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相同。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相同。
本实施例中，所述压电层350包括多个晶粒，所述多个晶粒形成的晶体的摇摆曲线半峰宽低于2.5度。需要说明的是，摇摆曲线(Rocking curve)描述某一特定晶面(衍射角确定的晶面)在样品中角发散大小，通过平面坐标系表示，其中，横坐标为该晶面与样品面的夹角，纵坐标则表示在某一夹角下，该晶面的衍射强度，摇摆曲线用于表示晶体质量，半峰宽角度越小说明晶体质量越好。此外，半峰宽(Full Width at Half Maximum，FWHM)指在函数的一个峰当中，前后两个函数值等于峰值一半的点之间的距离。
需要说明的是，在平面上形成所述压电层350可以使所 述压电层350不包括明显转向的晶粒，从而可以提高谐振装置的机电耦合系数以及谐振装置的Q值。
本实施例中，所述电极层360的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述电极层340上与所述电极层360重合的部分位于所述空腔330内；所述电极360上与所述电极340重合的部分位于所述空腔330上方，对应所述空腔330。
本实施例中，所述边缘延伸层371的材料包括金属。本实施例中，所述边缘延伸层371的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述复合支撑层373的介质包括非金属材料。本实施例中，所述复合支撑层373的介质包括但不限于以下至少之一：二氧化硅、碳氧化硅、氟氧化硅、聚合物。其中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。在另一个实施例中，压电层上的复合结构中的复合支撑层的介质可以为真空，即真空层。在另一个实施例中，压电层上的复合结构中的复合支撑层的介质可以为空气，即空气层。
本实施例中，所述复合结构370与所述电极层340无重合部。
图3f是本发明实施例的一种体声波谐振装置300的俯视结构示意图。
如图3f所示，本实施例中，所述电极层360呈八边形。需要说明的是，所属技术领域的技术人员知晓的其他形状的电极层，例如六边形、五边形等，也可以应用于本发明实施例。本实施例中，所述复合结构370与所述电极层360的一边相邻。
图4a是本发明实施例的一种体声波谐振装置400的剖 面A结构示意图。
如图4a所示，本发明实施例提供一种体声波谐振装置400包括：基底410；中间层420，位于所述基底410上，所述中间层420的上表面侧包括空腔430和凹槽431，其中，所述凹槽431位于所述空腔430的一侧并和所述空腔430相通，所述凹槽431的深度小于所述空腔430的深度；电极层440，位于所述空腔430内；复合结构450，所述复合结构450的第一端位于所述空腔430内，连接所述电极层440，所述复合结构450的与所述第一端相对的第二端位于所述凹槽431内，其中，所述凹槽431的深度等于所述复合结构450的厚度，所述复合结构450包括边缘延伸层451，电连接所述电极层440，及复合支撑层453，位于所述边缘延伸层451上，连接所述电极层440，所述复合支撑层453与所述边缘延伸层451重合；压电层460，位于所述电极层440、所述复合支撑层453及所述中间层420上，覆盖所述空腔430，其中，所述压电层460包括第一侧461及所述第一侧461相对的第二侧463，所述电极层440、所述复合结构450及所述中间层420位于所述第一侧461；以及电极层470，位于所述第二侧463，位于所述压电层460上。
需要说明的是，所述复合支撑层453加厚所述电极层470和所述边缘延伸层451之间的介质，从而减小边缘容抗480，提升了谐振装置的机电耦合系数及所述复合结构450可以阻隔漏波，提高Q值。
本实施例中，所述基底410的材料包括但不限于以下至少之一：硅、碳化硅、玻璃、砷化镓、氮化镓、陶瓷。
本实施例中，所述中间层420的材料包括但不限于以下至少之一：聚合物、绝缘电介质、多晶硅。本实施例中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。本实施例中，所述绝缘电介质包括但不限于以下至少之一：氮化铝、二氧化硅、氮化硅、氧化钛。
本实施例中，所述电极层440的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述边缘延伸层451的材料包括金属。本实施例中，所述边缘延伸层451的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述复合支撑层453的介质包括非金属材料。本实施例中，所述复合支撑层453的介质包括但不限于以下至少之一：二氧化硅、碳氧化硅、氟氧化硅、聚合物。其中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。在另一个实施例中，压电层下的复合结构中的复合支撑层的介质可以为真空，即真空层。在另一个实施例中，压电层下的复合结构中的复合支撑层的介质可以为空气，即空气层。
本实施例中，所述复合结构450与所述电极层470无重合部。
本实施例中，所述压电层460为平层，还覆盖所述中间层420的上表面侧。本实施例中，所述压电层460的材料包括但不限于以下至少之一：氮化铝、氮化铝合金、氮化镓、氧化锌、钽酸锂、铌酸锂、锆钛酸铅、铌镁酸铅—钛酸铅。
本实施例中，所述压电层460包括多个晶粒，所述多个晶粒包括第一晶粒和第二晶粒，其中，所述第一晶粒和所述第二晶粒是所述多个晶粒中的任意两个晶粒。所属技术领域的技术人员知晓晶粒的晶向、晶面等可以基于坐标系表示。
本实施例中，所述第一晶粒可以基于第一立体坐标系表示，所述第二晶粒可以基于第二立体坐标系表示，其中，所述第一立体坐标系至少包括沿第一方向的第一坐标轴及沿第三方向第三坐标轴，所述第二立体坐标系至少包括沿第二方向的第二坐标轴及沿第四 方向的第四坐标轴，其中，所述第一坐标轴对应所述第一晶粒的高，所述第二坐标轴对应所述第二晶粒的高。
本实施例中，所述第一方向和所述第二方向相同或相反。需要说明的是，所述第一方向和所述第二方向相同指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括0度至5度；所述第一方向和所述第二方向相反指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为ac立体坐标系，其中，所述第一坐标轴为第一c轴，所述第三坐标轴为第一a轴；所述第二立体坐标系为ac立体坐标系，所述第二坐标轴为第二c轴，所述第四坐标轴为第二a轴，其中，所述第一c轴和所述第二c轴的指向相同或相反。
在另一个实施例中，所述第一立体坐标系还包括沿第五方向的第五坐标轴，所述第二立体坐标系还包括沿第六方向的第六坐标轴。在另一个实施例中，所述第一方向和所述第二方向相同或相反，所述第三方向和所述第四方向相同或相反。需要说明的是，所述第三方向和所述第四方向相同指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括0度至5度；所述第三方向和所述第四方向相反指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为xyz立体坐标系，其中，所述第一坐标轴为第一z轴，所述第三坐标轴为第一y轴，所述第五坐标轴为第一x轴；所述第二立体坐标系为xyz立体坐标系，所述第二坐标轴为第二z轴，所述第四坐标轴为第二y轴，所述第六坐标轴为第二x轴。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相同。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z 轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相同。
本实施例中，所述压电层460包括多个晶粒，所述多个晶粒形成的晶体的摇摆曲线半峰宽低于2.5度。
需要说明的是，在平面上形成所述压电层460可以使所述压电层460不包括明显转向的晶粒，从而可以提高谐振装置的机电耦合系数以及谐振装置的Q值。
本实施例中，所述电极层470的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述电极层440上与所述电极层470重合的部分位于所述空腔430内；所述电极470上与所述电极440重合的部分位于所述空腔430上方，对应所述空腔430。
图4b是本发明实施例的一种体声波谐振装置400的俯视结构示意图。
如图4b所示，本实施例中，所述电极层440呈八边形。需要说明的是，所属技术领域的技术人员知晓的其他形状的电极层，例如六边形、五边形等，也可以应用于本发明实施例。本实施例中，所述复合结构450与所述电极层440的两边相邻。
图5a是本发明实施例的一种体声波谐振装置500的剖面A结构示意图。
如图5a所示，本发明实施例提供一种体声波谐振装置500包括：基底510；中间层520，位于所述基底510上，所述中间层520的上表面侧包括空腔530和凹槽531，其中，所述凹槽531位于所述空腔530的一侧并和所述空腔530相通，所述凹槽531的深度小于所述空腔530的深度；电极层540，位于所述空腔530内；复合结构550，所述复合结构550的第一端位于所述空腔530内，连接所 述电极层540，所述复合结构550的与所述第一端相对的第二端位于所述凹槽531内，其中，所述凹槽531的深度等于所述复合结构550的厚度，所述复合结构550包括边缘延伸层551，电连接所述电极层540，及复合支撑层553，位于所述边缘延伸层551上，连接所述电极层540，所述复合支撑层553与所述边缘延伸层551重合；压电层560，位于所述电极层540、所述复合支撑层553及所述中间层520上，覆盖所述空腔530，其中，所述压电层560包括第一侧561及所述第一侧561相对的第二侧563，所述电极层540、所述复合结构550及所述中间层520位于所述第一侧561；电极层570，位于所述第二侧563，位于所述压电层560上；以及复合结构580，位于所述第二侧563，位于所述压电层560上，连接所述电极层570，所述复合结构580包括边缘延伸层581，位于所述第二侧563，位于所述压电层560上方，电连接所述电极层570，及复合支撑层583，位于所述第二侧563，位于所述压电层560上，位于所述压电层560和所述边缘延伸层581之间，连接所述电极层570，所述复合支撑层583与所述边缘延伸层581重合。
需要说明的是，所述复合支撑层553加厚所述电极层570和所述边缘延伸层551之间的介质，减小边缘容抗590，所述复合支撑层583加厚所述电极层540和所述边缘延伸层581之间的介质，减小边缘容抗591，从而提升了谐振装置的机电耦合系数及所述复合结构550可以阻隔漏波，提高Q值。
本实施例中，所述基底510的材料包括但不限于以下至少之一：硅、碳化硅、玻璃、砷化镓、氮化镓、陶瓷。
本实施例中，所述中间层520的材料包括但不限于以下至少之一：聚合物、绝缘电介质、多晶硅。本实施例中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。本实施例中，所述绝缘电介质包括但不限于以下至少之一：氮化铝、二氧化硅、氮化硅、氧化钛。
本实施例中，所述电极层540的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述边缘延伸层551的材料包括金属。本实施例中，所述边缘延伸层551的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述复合支撑层553的介质包括非金属材料。本实施例中，所述复合支撑层553的介质包括但不限于以下至少之一：二氧化硅、碳氧化硅、氟氧化硅、聚合物。其中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。在另一个实施例中，压电层下的复合结构中的复合支撑层的介质可以为真空，即真空层。在另一个实施例中，压电层下的复合结构中的复合支撑层的介质可以为空气，即空气层。
本实施例中，所述压电层560为平层，还覆盖所述中间层520的上表面侧。本实施例中，所述压电层560的材料包括但不限于以下至少之一：氮化铝、氮化铝合金、氮化镓、氧化锌、钽酸锂、铌酸锂、锆钛酸铅、铌镁酸铅—钛酸铅。
本实施例中，所述压电层560包括多个晶粒，所述多个晶粒包括第一晶粒和第二晶粒，其中，所述第一晶粒和所述第二晶粒是所述多个晶粒中的任意两个晶粒。所属技术领域的技术人员知晓晶粒的晶向、晶面等可以基于坐标系表示。
本实施例中，所述第一晶粒可以基于第一立体坐标系表示，所述第二晶粒可以基于第二立体坐标系表示，其中，所述第一立体坐标系至少包括沿第一方向的第一坐标轴及沿第三方向第三坐标轴，所述第二立体坐标系至少包括沿第二方向的第二坐标轴及沿第四方向的第四坐标轴，其中，所述第一坐标轴对应所述第一晶粒的高，所述第二坐标轴对应所述第二晶粒的高。
本实施例中，所述第一方向和所述第二方向相同或相反。需要说明的是，所述第一方向和所述第二方向相同指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括0度至5度；所述第一方向和所述第二方向相反指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为ac立体坐标系，其中，所述第一坐标轴为第一c轴，所述第三坐标轴为第一a轴；所述第二立体坐标系为ac立体坐标系，所述第二坐标轴为第二c轴，所述第四坐标轴为第二a轴，其中，所述第一c轴和所述第二c轴的指向相同或相反。
在另一个实施例中，所述第一立体坐标系还包括沿第五方向的第五坐标轴，所述第二立体坐标系还包括沿第六方向的第六坐标轴。在另一个实施例中，所述第一方向和所述第二方向相同或相反，所述第三方向和所述第四方向相同或相反。需要说明的是，所述第三方向和所述第四方向相同指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括0度至5度；所述第三方向和所述第四方向相反指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为xyz立体坐标系，其中，所述第一坐标轴为第一z轴，所述第三坐标轴为第一y轴，所述第五坐标轴为第一x轴；所述第二立体坐标系为xyz立体坐标系，所述第二坐标轴为第二z轴，所述第四坐标轴为第二y轴，所述第六坐标轴为第二x轴。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相同。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反, 所述第一y轴和所述第二y轴的指向相同。
本实施例中，所述压电层560包括多个晶粒，所述多个晶粒形成的晶体的摇摆曲线半峰宽低于2.5度。
需要说明的是，在平面上形成所述压电层560可以使所述压电层560不包括明显转向的晶粒，从而可以提高谐振装置的机电耦合系数以及谐振装置的Q值。
本实施例中，所述电极层570的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述电极层540上与所述电极层570重合的部分位于所述空腔530内；所述电极570上与所述电极540重合的部分位于所述空腔530上方，对应所述空腔530。
本实施例中，所述边缘延伸层581的材料包括金属。本实施例中，所述边缘延伸层581的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述复合支撑层583的介质包括非金属材料。本实施例中，所述复合支撑层583的介质包括但不限于以下至少之一：二氧化硅、碳氧化硅、氟氧化硅、聚合物。其中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。在另一个实施例中，压电层上的复合结构中的复合支撑层的介质可以为真空，即真空层。在另一个实施例中，压电层上的复合结构中的复合支撑层的介质可以为空气，即空气层。
本实施例中，所述复合结构550与所述复合结构580无重合部。本实施例中，所述复合结构550与所述复合结构580位于所述电极层540与所述电极层570重合部的两侧。
图5b是本发明实施例的一种体声波谐振装置500的俯视结构示意图。
如图5b所示，本实施例中，所述电极层540呈八边形。需要说明的是，所属技术领域的技术人员知晓的其他形状的电极层，例如六边形、五边形等，也可以应用于本发明实施例。本实施例中，所述复合结构550与所述电极层540的一边相邻。本实施例中，所述电极层570呈八边形，与所述电极层540重合。需要说明的是，所属技术领域的技术人员知晓的其他形状的电极层，例如六边形、五边形等，也可以应用于本发明实施例。本实施例中，所述复合结构580与所述电极层570的三边相邻。
图6a是本发明实施例的一种体声波谐振装置600的剖面A结构示意图。
如图6a所示，本发明实施例提供一种体声波谐振装置600包括：基底610；中间层620，位于所述基底610上，所述中间层620的上表面侧包括空腔630和凹槽631，其中，所述凹槽631位于所述空腔630的一侧并和所述空腔630相通，所述凹槽631的深度小于所述空腔630的深度；电极层640，所述电极层640的第一端641位于所述空腔630内，所述电极层640的第二端643位于所述凹槽631内，其中，所述凹槽631的深度等于所述电极层640的厚度；压电层650，位于所述电极层640及所述中间层620上，覆盖所述空腔630，其中，所述压电层650包括第一侧651及所述第一侧651相对的第二侧653，所述电极层640及所述中间层620位于所述第一侧651；电极层660，位于所述第二侧653，位于所述压电层650上；边缘结构670，位于所述第二侧653，位于所述压电层650上，所述电极层660位于所述边缘结构670内侧(即，指向所述体声波谐振装置600中轴线的一侧)，所述边缘结构670与所述电极层640具有重合部；以及复合结构680，位于所述第二侧653，位于所述压电层650上，位于所述边缘结构670外侧(即，指向所述体声波谐振装置600中轴线方向相对的一侧)并连接所述边缘结构670，所述复合结构680包括边缘延伸层681，位于所述第二侧653，位于所述压电层650上方，电连接所述边缘结构670，及复合支撑层683，位于所述第二侧 653，位于所述压电层650上，位于所述压电层650和所述边缘延伸层681之间，连接所述边缘结构670，所述复合支撑层683与所述边缘延伸层681重合。
需要说明的是，所述复合支撑层683加厚所述电极层640和所述边缘延伸层681之间的介质，从而减小所述电极层640和所述边缘延伸层681之间的边缘容抗，提升了谐振装置的机电耦合系数。此外，如图6b所示，所述边缘结构670所在区域F的声阻抗大于所述电极层660所在的区域E，所述区域F的声阻抗大于空气及真空的声阻抗，所述区域F的声阻抗大于所述复合结构680所在的区域C的声阻抗，所述区域C的声阻抗小于所述区域E的声阻抗，所述复合结构680可以使所述区域C的声阻抗更接近空气及真空的声阻抗，从而可以更有效地反射谐振区边缘的声波，阻隔漏波，提升Q值。
本实施例中，所述基底610的材料包括但不限于以下至少之一：硅、碳化硅、玻璃、砷化镓、氮化镓、陶瓷。
本实施例中，所述中间层620的材料包括但不限于以下至少之一：聚合物、绝缘电介质、多晶硅。本实施例中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。本实施例中，所述绝缘电介质包括但不限于以下至少之一：氮化铝、二氧化硅、氮化硅、氧化钛。
本实施例中，所述电极层640的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述压电层650为平层，还覆盖所述中间层620的上表面侧。本实施例中，所述压电层650的材料包括但不限于以下至少之一：氮化铝、氮化铝合金、氮化镓、氧化锌、钽酸锂、铌酸锂、锆钛酸铅、铌镁酸铅—钛酸铅。
本实施例中，所述压电层650包括多个晶粒，所述多个 晶粒包括第一晶粒和第二晶粒，其中，所述第一晶粒和所述第二晶粒是所述多个晶粒中的任意两个晶粒。所属技术领域的技术人员知晓晶粒的晶向、晶面等可以基于坐标系表示。
本实施例中，所述第一晶粒可以基于第一立体坐标系表示，所述第二晶粒可以基于第二立体坐标系表示，其中，所述第一立体坐标系至少包括沿第一方向的第一坐标轴及沿第三方向第三坐标轴，所述第二立体坐标系至少包括沿第二方向的第二坐标轴及沿第四方向的第四坐标轴，其中，所述第一坐标轴对应所述第一晶粒的高，所述第二坐标轴对应所述第二晶粒的高。
本实施例中，所述第一方向和所述第二方向相同或相反。需要说明的是，所述第一方向和所述第二方向相同指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括0度至5度；所述第一方向和所述第二方向相反指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为ac立体坐标系，其中，所述第一坐标轴为第一c轴，所述第三坐标轴为第一a轴；所述第二立体坐标系为ac立体坐标系，所述第二坐标轴为第二c轴，所述第四坐标轴为第二a轴，其中，所述第一c轴和所述第二c轴的指向相同或相反。
在另一个实施例中，所述第一立体坐标系还包括沿第五方向的第五坐标轴，所述第二立体坐标系还包括沿第六方向的第六坐标轴。在另一个实施例中，所述第一方向和所述第二方向相同或相反，所述第三方向和所述第四方向相同或相反。需要说明的是，所述第三方向和所述第四方向相同指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括0度至5度；所述第三方向和所述第四方向相反指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为xyz立体坐 标系，其中，所述第一坐标轴为第一z轴，所述第三坐标轴为第一y轴，所述第五坐标轴为第一x轴；所述第二立体坐标系为xyz立体坐标系，所述第二坐标轴为第二z轴，所述第四坐标轴为第二y轴，所述第六坐标轴为第二x轴。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相同。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相同。
本实施例中，所述压电层650包括多个晶粒，所述多个晶粒形成的晶体的摇摆曲线半峰宽低于2.5度。
需要说明的是，在平面上形成所述压电层650可以使所述压电层650不包括明显转向的晶粒，从而可以提高谐振装置的机电耦合系数以及谐振装置的Q值。
本实施例中，所述电极层660的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述电极层640上与所述电极层660重合的部分位于所述空腔630内；所述电极660上与所述电极640重合的部分位于所述空腔630上方，对应所述空腔630。
本实施例中，所述边缘结构670包括边缘围边层，位于所述第二侧653，位于所述压电层650上方，所述边缘围边层电连接所述电极层660；及边缘支撑层，位于所述第二侧653，位于所述压电层650上，位于所述压电层650和所述边缘围边层之间，所述边缘支撑层连接所述电极层660，所述边缘围边层和所述边缘支撑层重合。
本实施例中，所述边缘围边层的材料与所述边缘支撑层的材料不同。在另一个实施例中，边缘围边层的材料与边缘支撑层的 材料相同。
本实施例中，所述边缘围边层的材料包括金属，所述边缘支撑层的材料包括非金属材料。在另一个实施例中，边缘围边层的材料包括金属，边缘支撑层的介质包括空气，即空气层。在另一个实施例中，边缘围边层的材料包括金属，边缘支撑层的介质包括真空，即真空层。在另一个实施例中，边缘围边层的材料包括金属，边缘支撑层的材料包括金属。
本实施例中，所述复合结构680的厚度大于所述边缘结构670的厚度。在另一个实施例中，压电层上的复合结构的厚度等于压电层上的边缘结构的厚度。在另一个实施例中，压电层上的复合结构的厚度小于压电层上的边缘结构的厚度。
本实施例中，所述边缘延伸层681的材料包括金属。本实施例中，所述边缘延伸层681的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述复合支撑层683的介质包括非金属材料。本实施例中，所述复合支撑层683的介质包括但不限于以下至少之一：二氧化硅、碳氧化硅、氟氧化硅、聚合物。其中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。在另一个实施例中，压电层上的复合结构中的复合支撑层的介质可以为真空，即真空层。在另一个实施例中，压电层上的复合结构中的复合支撑层的介质可以为空气，即空气层。
本实施例中，所述复合结构680与所述电极层640无重合部。
图6c是本发明实施例的一种体声波谐振装置600的俯视结构示意图。
如图6c所示，本实施例中，所述边缘结构670呈环状。 本实施例中，所述边缘结构670呈八边形。需要说明的是，所属技术领域的技术人员知晓的其他形状的边缘结构，例如六边形、五边形等，也可以应用于本发明实施例。本实施例中，所述复合结构680与所述边缘结构670的一边相邻。
图7a是本发明实施例的一种体声波谐振装置700的剖面A结构示意图。
如图7a所示，本发明实施例提供一种体声波谐振装置700包括：基底710；中间层720，位于所述基底710上，所述中间层720的上表面侧包括空腔730和凹槽731，其中，所述凹槽731位于所述空腔730的一侧并和所述空腔730相通，所述凹槽731的深度小于所述空腔730的深度；电极层740，位于所述空腔730内；边缘结构750，位于所述空腔730内，所述电极层740位于所述边缘结构750内侧(即，指向所述体声波谐振装置700中轴线的一侧)；复合结构760，位于所述边缘结构750外侧(即，指向所述体声波谐振装置700中轴线方向相对的一侧)，所述复合结构760的第一端连接所述边缘结构750，所述复合结构760的与所述第一端相对的第二端位于所述凹槽731内，其中，所述凹槽731的深度等于所述复合结构760的厚度，所述复合结构760包括边缘延伸层761，电连接所述边缘结构750，及复合支撑层763，位于所述边缘延伸层761上，连接所述边缘结构750，所述复合支撑层763与所述边缘延伸层761重合；压电层770，位于所述电极层740、所述边缘结构750、所述复合支撑层763及所述中间层720上，覆盖所述空腔730，其中，所述压电层770包括第一侧771及所述第一侧771相对的第二侧773，所述电极层740、所述边缘结构750、所述复合结构760及所述中间层720位于所述第一侧771；电极层780，位于所述第二侧773，位于所述压电层770上，所述边缘结构750与所述电极层780具有重合部。
需要说明的是，所述复合支撑层763加厚所述电极层780和所述边缘延伸层761之间的介质，从而减小所述电极层780和 所述边缘延伸层761之间的边缘容抗，提升了谐振装置的机电耦合系数。此外，所述边缘结构750所在边缘区域的声阻抗大于所述电极层740所在的内侧区域的声阻抗，所述边缘区域的声阻抗大于空气及真空的声阻抗，所述边缘区域的声阻抗大于所述复合结构760所在的外侧区域的声阻抗，所述外侧区域的声阻抗小于所述内侧区域的声阻抗，所述复合结构760可以使所述外侧区域的声阻抗更接近空气及真空的声阻抗，从而可以更有效地反射谐振区边缘的声波，阻隔漏波，提升Q值。
本实施例中，所述基底710的材料包括但不限于以下至少之一：硅、碳化硅、玻璃、砷化镓、氮化镓、陶瓷。
本实施例中，所述中间层720的材料包括但不限于以下至少之一：聚合物、绝缘电介质、多晶硅。本实施例中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。本实施例中，所述绝缘电介质包括但不限于以下至少之一：氮化铝、二氧化硅、氮化硅、氧化钛。
本实施例中，所述电极层740的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述边缘结构750包括边缘围边层，位于空腔730内，所述边缘围边层电连接所述电极层740；及边缘支撑层，位于所述边缘围边层上，所述边缘支撑层连接所述电极层740，所述边缘围边层和所述边缘支撑层重合。
本实施例中，所述边缘围边层的材料与所述边缘支撑层的材料不同。在另一个实施例中，边缘围边层的材料与边缘支撑层的材料相同。
本实施例中，所述边缘围边层的材料包括金属，所述边缘支撑层的材料包括非金属材料。在另一个实施例中，边缘围边层的材料包括金属，边缘支撑层的介质包括空气，即空气层。在另一个实 施例中，边缘围边层的材料包括金属，边缘支撑层的介质包括真空，即真空层。在另一个实施例中，边缘围边层的材料包括金属，边缘支撑层的材料包括金属。
本实施例中，所述复合结构760的厚度大于所述边缘结构750的厚度。在另一个实施例中，压电层下的复合结构的厚度等于压电层下的边缘结构的厚度。在另一个实施例中，压电层下的复合结构的厚度小于压电层下的边缘结构的厚度。
本实施例中，所述边缘延伸层761的材料包括金属。本实施例中，所述边缘延伸层761的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述复合支撑层763的介质包括非金属材料。本实施例中，所述复合支撑层763的介质包括但不限于以下至少之一：二氧化硅、碳氧化硅、氟氧化硅、聚合物。其中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。在另一个实施例中，压电层下的复合结构中的复合支撑层的介质可以为真空，即真空层。在另一个实施例中，压电层下的复合结构中的复合支撑层的介质可以为空气，即空气层。
本实施例中，所述复合结构760与所述电极层780无重合部。
本实施例中，所述压电层770为平层，还覆盖所述中间层720的上表面侧。本实施例中，所述压电层770的材料包括但不限于以下至少之一：氮化铝、氮化铝合金、氮化镓、氧化锌、钽酸锂、铌酸锂、锆钛酸铅、铌镁酸铅—钛酸铅。
本实施例中，所述压电层770包括多个晶粒，所述多个晶粒包括第一晶粒和第二晶粒，其中，所述第一晶粒和所述第二晶粒是所述多个晶粒中的任意两个晶粒。所属技术领域的技术人员知晓晶 粒的晶向、晶面等可以基于坐标系表示。
本实施例中，所述第一晶粒可以基于第一立体坐标系表示，所述第二晶粒可以基于第二立体坐标系表示，其中，所述第一立体坐标系至少包括沿第一方向的第一坐标轴及沿第三方向第三坐标轴，所述第二立体坐标系至少包括沿第二方向的第二坐标轴及沿第四方向的第四坐标轴，其中，所述第一坐标轴对应所述第一晶粒的高，所述第二坐标轴对应所述第二晶粒的高。
本实施例中，所述第一方向和所述第二方向相同或相反。需要说明的是，所述第一方向和所述第二方向相同指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括0度至5度；所述第一方向和所述第二方向相反指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为ac立体坐标系，其中，所述第一坐标轴为第一c轴，所述第三坐标轴为第一a轴；所述第二立体坐标系为ac立体坐标系，所述第二坐标轴为第二c轴，所述第四坐标轴为第二a轴，其中，所述第一c轴和所述第二c轴的指向相同或相反。
在另一个实施例中，所述第一立体坐标系还包括沿第五方向的第五坐标轴，所述第二立体坐标系还包括沿第六方向的第六坐标轴。在另一个实施例中，所述第一方向和所述第二方向相同或相反，所述第三方向和所述第四方向相同或相反。需要说明的是，所述第三方向和所述第四方向相同指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括0度至5度；所述第三方向和所述第四方向相反指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为xyz立体坐标系，其中，所述第一坐标轴为第一z轴，所述第三坐标轴为第一y轴，所述第五坐标轴为第一x轴；所述第二立体坐标系为xyz立体坐 标系，所述第二坐标轴为第二z轴，所述第四坐标轴为第二y轴，所述第六坐标轴为第二x轴。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相同。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相同。
本实施例中，所述压电层770包括多个晶粒，所述多个晶粒形成的晶体的摇摆曲线半峰宽低于2.5度。
需要说明的是，在平面上形成所述压电层770可以使所述压电层770不包括明显转向的晶粒，从而可以提高谐振装置的机电耦合系数以及谐振装置的Q值。
本实施例中，所述电极层780的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述电极层740上与所述电极层780重合的部分位于所述空腔730内；所述电极780上与所述电极740重合的部分位于所述空腔730上方，对应所述空腔730。
图7b是本发明实施例的一种体声波谐振装置700的俯视结构示意图。
如图7b所示，本实施例中，所述边缘结构750呈环状。本实施例中，所述边缘结构750呈八边形。需要说明的是，所属技术领域的技术人员知晓的其他形状的边缘结构，例如六边形、五边形等，也可以应用于本发明实施例。本实施例中，所述复合结构760与所述边缘结构750的三边相邻。
图8a是本发明实施例的一种体声波谐振装置800的剖面A结构示意图。
如图8a所示，本发明实施例提供一种体声波谐振装置800包括：基底810；中间层820，位于所述基底810上，所述中间层820的上表面侧包括空腔830和凹槽831，其中，所述凹槽831位于所述空腔830的一侧并和所述空腔830相通，所述凹槽831的深度小于所述空腔830的深度；电极层840，位于所述空腔830内；边缘结构850，位于所述空腔830内，所述电极层840位于所述边缘结构850内侧(即，指向所述体声波谐振装置800中轴线的一侧)；复合结构860，位于所述边缘结构850外侧(即，指向所述体声波谐振装置800中轴线方向相对的一侧)，所述复合结构860的第一端连接所述边缘结构850，所述复合结构860的与所述第一端相对的第二端位于所述凹槽831内，其中，所述凹槽831的深度等于所述复合结构860的厚度，所述复合结构860包括边缘延伸层861，电连接所述边缘结构850，及复合支撑层863，位于所述边缘延伸层861上，连接所述边缘结构850，所述复合支撑层863与所述边缘延伸层861重合；压电层870，位于所述电极层840、所述边缘结构850、所述复合支撑层863及所述中间层820上，覆盖所述空腔830，其中，所述压电层870包括第一侧871及所述第一侧871相对的第二侧873，所述电极层840、所述边缘结构850、所述复合结构860及所述中间层820位于所述第一侧871；电极层880，位于所述第二侧873，位于所述压电层870上，所述电极层880与所述边缘结构850具有重合部；边缘结构851，位于所述第二侧873，位于所述压电层870上，所述电极层880位于所述边缘结构851内侧(即，指向所述体声波谐振装置800中轴线的一侧)，所述边缘结构851与所述电极层840具有重合部；以及复合结构890，位于所述第二侧873，位于所述压电层870上，位于所述边缘结构851外侧(即，指向所述体声波谐振装置800中轴线方向相对的一侧)并连接所述边缘结构851，所述复合结构890包括边缘延伸层891，位于所述第二侧873，位于所述压电层870上方，电连接所述边缘结构851，及复合支撑层893，位于所述第二侧873，位于所述压电层870上，位于所述压电层870和所述边缘延伸 层891之间，连接所述边缘结构851，所述复合支撑层893与所述边缘延伸层891重合。
需要说明的是，所述复合支撑层863加厚所述电极层880和所述边缘延伸层861之间的介质，减小所述电极层880和所述边缘延伸层861之间的边缘容抗，所述复合支撑层893加厚所述电极层840和所述边缘延伸层891之间的介质，减小所述电极层840和所述边缘延伸层891之间的边缘容抗，从而提升了谐振装置的机电耦合系数。
此外，所述边缘结构850所在第一边缘区域的声阻抗大于所述电极层840所在的内侧区域，所述第一边缘区域的声阻抗大于所述复合结构860所在的第一外侧区域的声阻抗，所述第一外侧区域的声阻抗小于所述内侧区域的声阻抗，所述复合结构860可以使所述第一外侧区域的声阻抗更接近空气及真空的声阻抗；所述边缘结构851所在第二边缘区域的声阻抗大于所述电极层880所在的所述内侧区域，所述第二边缘区域的声阻抗大于所述复合结构890所在的第二外侧区域的声阻抗，所述第二外侧区域的声阻抗小于所述内侧区域的声阻抗，所述复合结构890可以使所述第二外侧区域的声阻抗更接近空气及真空的声阻抗；从而，可以更有效地反射谐振区边缘的声波，阻隔漏波，提升Q值。
本实施例中，所述基底810的材料包括但不限于以下至少之一：硅、碳化硅、玻璃、砷化镓、氮化镓、陶瓷。
本实施例中，所述中间层820的材料包括但不限于以下至少之一：聚合物、绝缘电介质、多晶硅。本实施例中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。本实施例中，所述绝缘电介质包括但不限于以下至少之一：氮化铝、二氧化硅、氮化硅、氧化钛。
本实施例中，所述电极层840的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述边缘结构850包括第一边缘围边层，位于空腔830内，所述第一边缘围边层电连接所述电极层840；及第一边缘支撑层，位于所述第一边缘围边层上，所述第一边缘支撑层连接所述电极层840，所述第一边缘围边层和所述第一边缘支撑层重合。
本实施例中，所述第一边缘围边层的材料和所述第一边缘支撑层的材料不同。在另一个实施例中，第一边缘围边层的材料和第一边缘支撑层的材料相同。
本实施例中，所述第一边缘围边层的材料包括金属，所述第一边缘支撑层的材料包括非金属材料。在另一个实施例中，第一边缘围边层的材料包括金属，第一边缘支撑层的介质包括空气，即空气层。在另一个实施例中，第一边缘围边层的材料包括金属，第一边缘支撑层的介质包括真空，即真空层。在另一个实施例中，第一边缘围边层的材料包括金属，第一边缘支撑层的材料包括金属。
本实施例中，所述复合结构860的厚度大于所述边缘结构850的厚度。在另一个实施例中，压电层下的复合结构的厚度等于压电层下的边缘结构的厚度。在另一个实施例中，压电层下的复合结构的厚度小于压电层下的边缘结构的厚度。
本实施例中，所述边缘延伸层861的材料包括金属。本实施例中，所述边缘延伸层861的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述复合支撑层863的介质包括非金属材料。本实施例中，所述复合支撑层863的介质包括但不限于以下至少之一：二氧化硅、碳氧化硅、氟氧化硅、聚合物。其中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。在另一个实施例中，压电层下的复合结构中的复合支撑层的介质可以为真空，即真空层。在另一个实施例中，压电层下的复合结构中的复合支撑层的介质可以为空气，即空气层。
本实施例中，所述复合结构860与所述电极层880无重合部。
本实施例中，所述压电层870为平层，还覆盖所述中间层820的上表面侧。本实施例中，所述压电层870的材料包括但不限于以下至少之一：氮化铝、氮化铝合金、氮化镓、氧化锌、钽酸锂、铌酸锂、锆钛酸铅、铌镁酸铅—钛酸铅。
本实施例中，所述压电层870包括多个晶粒，所述多个晶粒包括第一晶粒和第二晶粒，其中，所述第一晶粒和所述第二晶粒是所述多个晶粒中的任意两个晶粒。所属技术领域的技术人员知晓晶粒的晶向、晶面等可以基于坐标系表示。
本实施例中，所述第一晶粒可以基于第一立体坐标系表示，所述第二晶粒可以基于第二立体坐标系表示，其中，所述第一立体坐标系至少包括沿第一方向的第一坐标轴及沿第三方向第三坐标轴，所述第二立体坐标系至少包括沿第二方向的第二坐标轴及沿第四方向的第四坐标轴，其中，所述第一坐标轴对应所述第一晶粒的高，所述第二坐标轴对应所述第二晶粒的高。
本实施例中，所述第一方向和所述第二方向相同或相反。需要说明的是，所述第一方向和所述第二方向相同指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括0度至5度；所述第一方向和所述第二方向相反指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为ac立体坐标系，其中，所述第一坐标轴为第一c轴，所述第三坐标轴为第一a轴；所述第二立体坐标系为ac立体坐标系，所述第二坐标轴为第二c轴，所述第四坐标轴为第二a轴，其中，所述第一c轴和所述第二c轴的指向相同或相反。
在另一个实施例中，所述第一立体坐标系还包括沿第五 方向的第五坐标轴，所述第二立体坐标系还包括沿第六方向的第六坐标轴。在另一个实施例中，所述第一方向和所述第二方向相同或相反，所述第三方向和所述第四方向相同或相反。需要说明的是，所述第三方向和所述第四方向相同指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括0度至5度；所述第三方向和所述第四方向相反指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为xyz立体坐标系，其中，所述第一坐标轴为第一z轴，所述第三坐标轴为第一y轴，所述第五坐标轴为第一x轴；所述第二立体坐标系为xyz立体坐标系，所述第二坐标轴为第二z轴，所述第四坐标轴为第二y轴，所述第六坐标轴为第二x轴。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相同。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相同。
本实施例中，所述压电层870包括多个晶粒，所述多个晶粒形成的晶体的摇摆曲线半峰宽低于2.5度。
需要说明的是，在平面上形成所述压电层870可以使所述压电层870不包括明显转向的晶粒，从而可以提高谐振装置的机电耦合系数以及谐振装置的Q值。
本实施例中，所述电极层880的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述电极层840上与所述电极层880重合的部分位于所述空腔830内；所述电极880上与所述电极840重合的部分位于所述空腔830上方，对应所述空腔830。
本实施例中，所述边缘结构851包括第二边缘围边层，位于所述第二侧873，位于所述压电层870上方，所述第二边缘围边层电连接所述电极层880；及第二边缘支撑层，位于所述第二侧873，位于所述压电层870上，位于所述压电层870和所述第二边缘围边层之间，所述第二边缘支撑层连接所述电极层880，所述第二边缘围边层和所述第二边缘支撑层重合。
本实施例中，所述第二边缘围边层的材料和所述第二边缘支撑层的材料不同。在另一个实施例中，第二边缘围边层的材料和第二边缘支撑层的材料相同。
本实施例中，所述第二边缘围边层的材料包括金属，所述第二边缘支撑层的材料包括非金属材料。在另一个实施例中，第二边缘围边层的材料包括金属，第二边缘支撑层的介质包括空气，即空气层。在另一个实施例中，第二边缘围边层的材料包括金属，第二边缘支撑层的介质包括真空，即真空层。在另一个实施例中，第二边缘围边层的材料包括金属，第二边缘支撑层的材料包括金属。
本实施例中，所述复合结构890的厚度大于所述边缘结构851的厚度。在另一个实施例中，压电层上的复合结构的厚度等于压电层上的边缘结构的厚度。在另一个实施例中，压电层上的复合结构的厚度小于压电层上的边缘结构的厚度。
本实施例中，所述边缘延伸层891的材料包括金属。本实施例中，所述边缘延伸层891的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述复合支撑层893的介质包括非金属材料。本实施例中，所述复合支撑层893的介质包括但不限于以下至少之一：二氧化硅、碳氧化硅、氟氧化硅、聚合物。其中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。在另一个实施例中，压电层上的复合结构中的复合支撑层的介质可以为真空，即真空层。在另一个 实施例中，压电层上的复合结构中的复合支撑层的介质可以为空气，即空气层。
本实施例中，所述复合结构890与所述电极层840无重合部。
本实施例中，所述复合结构890与所述复合结构860无重合部。本实施例中，所述复合结构890与所述复合结构860位于所述电极层880两侧。
图8b是本发明实施例的一种体声波谐振装置800的俯视结构示意图。
如图8b所示，本实施例中，所述边缘结构850与所述边缘结构851具有重合部853。本实施例中，所述边缘结构850与所述边缘结构851形成的围边呈环状。本实施例中，所述边缘结构850与所述边缘结构851形成的围边呈八边形。需要说明的是，所属技术领域的技术人员知晓的其他形状的围边，例如，六边形、五边形等，也可以应用于本发明实施例。本实施例中，所述复合结构860与所述边缘结构850的两边相邻，所述复合结构890与所述边缘结构851的两边相邻。
图9a是本发明实施例的一种体声波谐振装置900的剖面A结构示意图。
如图9a所示，本发明实施例提供一种体声波谐振装置900包括：基底910；中间层920，位于所述基底910上，所述中间层920的上表面侧包括空腔930和凹槽931，其中，所述凹槽931位于所述空腔930的一侧并和所述空腔930相通，所述凹槽931的深度小于所述空腔930的深度；电极层940，所述电极层940的第一端941位于所述空腔930内，所述电极层940的第二端943位于所述凹槽931内，其中，所述凹槽931的深度等于所述电极层940的厚度；压电层950，位于所述电极层940及所述中间层920上，覆盖所述空腔 930，其中，所述压电层950包括第一侧951及所述第一侧951相对的第二侧953，所述电极层940及所述中间层920位于所述第一侧951；电极层960，位于所述第二侧953，位于所述压电层950上；边缘结构970，位于所述第二侧953，位于所述压电层950上，所述电极层960位于所述边缘结构970内侧(即，指向所述体声波谐振装置900中轴线的一侧)，所述边缘结构970与所述电极层940具有重合部；以及复合结构980，位于所述第二侧953，位于所述压电层950上，位于所述边缘结构970外侧(即，指向所述体声波谐振装置900中轴线方向相对的一侧)并连接所述边缘结构970；其中，所述复合结构980包括边缘延伸层981，位于所述第二侧953，位于所述压电层950上方，电连接所述边缘结构970，及复合支撑层983，位于所述第二侧953，位于所述压电层950上，位于所述压电层950和所述边缘延伸层981之间，连接所述边缘结构970，所述复合支撑层983与所述边缘延伸层981重合，所述边缘延伸层981及所述复合支撑层983与所述电极层940具有第一重合部；所述复合结构980还包括边缘延伸层985，位于所述第二侧953，位于所述压电层950上方，电连接所述边缘结构970，及复合支撑层987，位于所述第二侧953，位于所述压电层950上，位于所述压电层950和所述边缘延伸层985之间，连接所述边缘结构970，所述复合支撑层987与所述边缘延伸层985重合，所述边缘延伸层985及所述复合支撑层987与所述电极层940具有第二重合部。
需要说明的是，所述复合支撑层983加厚所述电极层940和所述边缘延伸层981之间的介质，减小所述电极层940和所述边缘延伸层981之间的边缘容抗，所述复合支撑层987加厚所述电极层940和所述边缘延伸层985之间的介质，减小所述电极层940和所述边缘延伸层985之间的边缘容抗，从而提升了谐振装置的机电耦合系数。
此外，所述边缘结构970和所述复合结构980形成反射结构，位于所述电极层960的外侧，从而实现反射谐振区内的声波， 阻隔漏波，提升Q值。
本实施例中，所述基底910的材料包括但不限于以下至少之一：硅、碳化硅、玻璃、砷化镓、氮化镓、陶瓷。
本实施例中，所述中间层920的材料包括但不限于以下至少之一：聚合物、绝缘电介质、多晶硅。本实施例中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。本实施例中，所述绝缘电介质包括但不限于以下至少之一：氮化铝、二氧化硅、氮化硅、氧化钛。
本实施例中，所述电极层940的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述压电层950为平层，还覆盖所述中间层920的上表面侧。本实施例中，所述压电层950的材料包括但不限于以下至少之一：氮化铝、氮化铝合金、氮化镓、氧化锌、钽酸锂、铌酸锂、锆钛酸铅、铌镁酸铅—钛酸铅。
本实施例中，所述压电层950包括多个晶粒，所述多个晶粒包括第一晶粒和第二晶粒，其中，所述第一晶粒和所述第二晶粒是所述多个晶粒中的任意两个晶粒。所属技术领域的技术人员知晓晶粒的晶向、晶面等可以基于坐标系表示。
本实施例中，所述第一晶粒可以基于第一立体坐标系表示，所述第二晶粒可以基于第二立体坐标系表示，其中，所述第一立体坐标系至少包括沿第一方向的第一坐标轴及沿第三方向第三坐标轴，所述第二立体坐标系至少包括沿第二方向的第二坐标轴及沿第四方向的第四坐标轴，其中，所述第一坐标轴对应所述第一晶粒的高，所述第二坐标轴对应所述第二晶粒的高。
本实施例中，所述第一方向和所述第二方向相同或相反。需要说明的是，所述第一方向和所述第二方向相同指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括0度至5度； 所述第一方向和所述第二方向相反指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为ac立体坐标系，其中，所述第一坐标轴为第一c轴，所述第三坐标轴为第一a轴；所述第二立体坐标系为ac立体坐标系，所述第二坐标轴为第二c轴，所述第四坐标轴为第二a轴，其中，所述第一c轴和所述第二c轴的指向相同或相反。
在另一个实施例中，所述第一立体坐标系还包括沿第五方向的第五坐标轴，所述第二立体坐标系还包括沿第六方向的第六坐标轴。在另一个实施例中，所述第一方向和所述第二方向相同或相反，所述第三方向和所述第四方向相同或相反。需要说明的是，所述第三方向和所述第四方向相同指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括0度至5度；所述第三方向和所述第四方向相反指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为xyz立体坐标系，其中，所述第一坐标轴为第一z轴，所述第三坐标轴为第一y轴，所述第五坐标轴为第一x轴；所述第二立体坐标系为xyz立体坐标系，所述第二坐标轴为第二z轴，所述第四坐标轴为第二y轴，所述第六坐标轴为第二x轴。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相同。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相同。
本实施例中，所述压电层950包括多个晶粒，所述多个晶粒形成的晶体的摇摆曲线半峰宽低于2.5度。
需要说明的是，在平面上形成所述压电层950可以使所述压电层950不包括明显转向的晶粒，从而可以提高谐振装置的机电耦合系数以及谐振装置的Q值。
本实施例中，所述电极层960的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述电极层940上与所述电极层960重合的部分位于所述空腔930内；所述电极960上与所述电极940重合的部分位于所述空腔930上方，对应所述空腔930。
本实施例中，所述边缘结构970包括边缘围边层，位于所述第二侧953，位于所述压电层950上方，所述边缘围边层电连接所述电极层960；及边缘支撑层，位于所述第二侧953，位于所述压电层950上，位于所述压电层950和所述边缘围边层之间，所述边缘支撑层连接所述电极层960，所述边缘围边层和所述边缘支撑层重合。
本实施例中，所述边缘围边层的材料与所述边缘支撑层的材料不同。在另一个实施例中，边缘围边层的材料与边缘支撑层的材料相同。
本实施例中，所述边缘围边层的材料包括金属，所述边缘支撑层的材料包括非金属材料。在另一个实施例中，边缘围边层的材料包括金属，边缘支撑层的介质包括空气，即空气层。在另一个实施例中，边缘围边层的材料包括金属，边缘支撑层的介质包括真空，即真空层。在另一个实施例中，边缘围边层的材料包括金属，边缘支撑层的材料包括金属。
本实施例中，所述复合结构980的厚度大于所述边缘结构970的厚度。在另一个实施例中，压电层上的复合结构的厚度等于压电层上的边缘结构的厚度。在另一个实施例中，压电层上的复合结构的厚度小于压电层上的边缘结构的厚度。
本实施例中，所述边缘延伸层981的材料包括金属。本 实施例中，所述边缘延伸层981的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述复合支撑层983的介质包括非金属材料。本实施例中，所述复合支撑层983的介质包括但不限于以下至少之一：二氧化硅、碳氧化硅、氟氧化硅、聚合物。其中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。在另一个实施例中，压电层上的复合结构中的复合支撑层的介质可以为真空，即真空层。在另一个实施例中，压电层上的复合结构中的复合支撑层的介质可以为空气，即空气层。
本实施例中，所述边缘延伸层985的材料包括金属。本实施例中，所述边缘延伸层985的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述复合支撑层987的介质包括非金属材料。本实施例中，所述复合支撑层987的介质包括但不限于以下至少之一：二氧化硅、碳氧化硅、氟氧化硅、聚合物。其中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。在另一个实施例中，压电层上的复合结构中的复合支撑层的介质可以为真空，即真空层。在另一个实施例中，压电层上的复合结构中的复合支撑层的介质可以为空气，即空气层。
本实施例中，所述边缘延伸层981和所述边缘延伸层985无重合部。本实施例中，所述边缘延伸层981和所述边缘延伸层985位于所述电极层960两侧。
本实施例中，所述第一重合部的宽度等于所述边缘结构970的宽度，所述第二重合部的宽度等于所述边缘结构970的宽度。
图9b是本发明实施例的一种体声波谐振装置900的俯 视结构示意图。
如图9b所示，本实施例中，所述边缘结构970呈环状。本实施例中，所述边缘结构970呈八边形。需要说明的是，所属技术领域的技术人员知晓的其他形状的边缘结构，例如六边形、五边形等，也可以应用于本发明实施例。本实施例中，所述复合结构980与所述边缘结构970的两边相邻，其中，所述边缘延伸层981与第一边相邻，所述边缘延伸层985与第二边相邻，所述第一边和所述第二边分别位于所述电极层960的两端。
图10a是本发明实施例的一种体声波谐振装置1000的剖面A结构示意图。
如图10a所示，本发明实施例提供一种体声波谐振装置1000包括：基底1010；中间层1020，位于所述基底1010上，所述中间层1020的上表面侧包括空腔1030和凹槽1031，其中，所述凹槽1031位于所述空腔1030的一侧并和所述空腔1030相通，所述凹槽1031的深度小于所述空腔1030的深度；电极层1040，位于所述空腔1030内；边缘结构1050，位于所述空腔1030内，所述电极层1040位于所述边缘结构1050内侧(即，指向所述体声波谐振装置1000中轴线的一侧)；复合结构1060，位于所述边缘结构1050外侧(即，指向所述体声波谐振装置1000中轴线方向相对的一侧)，所述复合结构1060的第一端位于所述空腔1030内，所述复合结构1060的与所述第一端相对的第二端位于所述凹槽1031内，其中，所述凹槽1031的深度等于所述复合结构1060的厚度；其中，所述复合结构1060包括边缘延伸层1061，电连接所述边缘结构1050，及复合支撑层1063，位于所述边缘延伸层1061上，连接所述边缘结构1050，所述复合支撑层1063与所述边缘延伸层1061重合；其中，所述复合结构1060还包括边缘延伸层1065，位于所述空腔1030内，电连接所述边缘结构1050，及复合支撑层1067，位于所述边缘延伸层1061上，位于所述空腔1030内，连接所述边缘结构1050，所述复合支撑层1067与 所述边缘延伸层1065重合；压电层1070，位于所述电极层1040、所述边缘结构1050、复合支撑层1063、复合支撑层1067及所述中间层1020上，覆盖所述空腔1030，其中，所述压电层1070包括第一侧1071及所述第一侧1071相对的第二侧1073，所述电极层1040、所述边缘结构1050、所述复合结构1060及所述中间层1020位于所述第一侧1071；电极层1080，位于所述第二侧1073，位于所述压电层1070上，所述边缘结构1050与所述电极层1080具有重合部，所述边缘延伸层1061及所述复合支撑层1063与所述电极层1080具有第一重合部，所述边缘延伸层1065及所述复合支撑层1067与所述电极层1080具有第二重合部。
需要说明的是，所述复合支撑层1063加厚所述电极层1080和所述边缘延伸层1061之间的介质，减小所述电极层1080和所述边缘延伸层1061之间的边缘容抗，所述复合支撑层1067加厚所述电极层1080和所述边缘延伸层1065之间的介质，减小所述电极层1080和所述边缘延伸层1065之间的边缘容抗，从而提升了谐振装置的机电耦合系数。
此外，所述边缘结构1050和所述复合结构1060形成反射结构，位于所述电极层1040的外侧，从而实现反射谐振区内的声波，阻隔漏波，提升Q值。
本实施例中，所述基底1010的材料包括但不限于以下至少之一：硅、碳化硅、玻璃、砷化镓、氮化镓、陶瓷。
本实施例中，所述中间层1020的材料包括但不限于以下至少之一：聚合物、绝缘电介质、多晶硅。本实施例中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。本实施例中，所述绝缘电介质包括但不限于以下至少之一：氮化铝、二氧化硅、氮化硅、氧化钛。
本实施例中，所述电极层1040的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述边缘结构1050包括边缘围边层，位于空腔1030内，所述边缘围边层电连接所述电极层1040；及边缘支撑层，位于空腔1030内，位于所述边缘围边层上，所述边缘支撑层连接所述电极层1040，所述边缘围边层和所述边缘支撑层重合。
本实施例中，所述边缘围边层的材料与所述边缘支撑层的材料不同。在另一个实施例中，边缘围边层的材料与边缘支撑层的材料相同。
本实施例中，所述边缘围边层的材料包括金属，所述边缘支撑层的材料包括非金属材料。在另一个实施例中，边缘围边层的材料包括金属，边缘支撑层的介质包括空气，即空气层。在另一个实施例中，边缘围边层的材料包括金属，边缘支撑层的介质包括真空，即真空层。在另一个实施例中，边缘围边层的材料包括金属，边缘支撑层的材料包括金属。
本实施例中，所述复合结构1060的厚度大于所述边缘结构1050的厚度。在另一个实施例中，压电层下的复合结构的厚度等于压电层下的边缘结构的厚度。在另一个实施例中，压电层下的复合结构的厚度小于压电层下的边缘结构的厚度。
本实施例中，所述边缘延伸层1061的材料包括金属。本实施例中，所述边缘延伸层1061的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述复合支撑层1063的介质包括非金属材料。本实施例中，所述复合支撑层1063的介质包括但不限于以下至少之一：二氧化硅、碳氧化硅、氟氧化硅、聚合物。其中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。在另一个实施例中，压电层下的复合结构中的第一复合支撑层的介质可以为真空，即真空层。在另一个实施例中，压电层下的复合结构中的第一复合支撑层的介质可以为空气，即空气层。
本实施例中，所述边缘延伸层1065的材料包括金属。本实施例中，所述边缘延伸层1065的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述复合支撑层1067的介质包括非金属材料。本实施例中，所述复合支撑层1067的介质包括但不限于以下至少之一：二氧化硅、碳氧化硅、氟氧化硅、聚合物。其中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。在另一个实施例中，压电层下的复合结构中的第二复合支撑层的介质可以为真空，即真空层。在另一个实施例中，压电层下的复合结构中的第二复合支撑层的介质可以为空气，即空气层。
本实施例中，所述边缘延伸层1061和所述边缘延伸层1065无重合部。本实施例中，所述边缘延伸层1061和所述边缘延伸层1065位于所述电极层1040两侧。
本实施例中，所述压电层1070为平层，还覆盖所述中间层1020的上表面侧。本实施例中，所述压电层1070的材料包括但不限于以下至少之一：氮化铝、氮化铝合金、氮化镓、氧化锌、钽酸锂、铌酸锂、锆钛酸铅、铌镁酸铅—钛酸铅。
本实施例中，所述压电层1070包括多个晶粒，所述多个晶粒包括第一晶粒和第二晶粒，其中，所述第一晶粒和所述第二晶粒是所述多个晶粒中的任意两个晶粒。所属技术领域的技术人员知晓晶粒的晶向、晶面等可以基于坐标系表示。
本实施例中，所述第一晶粒可以基于第一立体坐标系表示，所述第二晶粒可以基于第二立体坐标系表示，其中，所述第一立体坐标系至少包括沿第一方向的第一坐标轴及沿第三方向第三坐标轴，所述第二立体坐标系至少包括沿第二方向的第二坐标轴及沿第四方向的第四坐标轴，其中，所述第一坐标轴对应所述第一晶粒的高，所述第二坐标轴对应所述第二晶粒的高。
本实施例中，所述第一方向和所述第二方向相同或相反。需要说明的是，所述第一方向和所述第二方向相同指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括0度至5度；所述第一方向和所述第二方向相反指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为ac立体坐标系，其中，所述第一坐标轴为第一c轴，所述第三坐标轴为第一a轴；所述第二立体坐标系为ac立体坐标系，所述第二坐标轴为第二c轴，所述第四坐标轴为第二a轴，其中，所述第一c轴和所述第二c轴的指向相同或相反。
在另一个实施例中，所述第一立体坐标系还包括沿第五方向的第五坐标轴，所述第二立体坐标系还包括沿第六方向的第六坐标轴。在另一个实施例中，所述第一方向和所述第二方向相同或相反，所述第三方向和所述第四方向相同或相反。需要说明的是，所述第三方向和所述第四方向相同指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括0度至5度；所述第三方向和所述第四方向相反指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为xyz立体坐标系，其中，所述第一坐标轴为第一z轴，所述第三坐标轴为第一y轴，所述第五坐标轴为第一x轴；所述第二立体坐标系为xyz立体坐标系，所述第二坐标轴为第二z轴，所述第四坐标轴为第二y轴，所述第六坐标轴为第二x轴。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相同。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反, 所述第一y轴和所述第二y轴的指向相同。
本实施例中，所述压电层1070包括多个晶粒，所述多个晶粒形成的晶体的摇摆曲线半峰宽低于2.5度。
需要说明的是，在平面上形成所述压电层1070可以使所述压电层1070不包括明显转向的晶粒，从而可以提高谐振装置的机电耦合系数以及谐振装置的Q值。
本实施例中，所述电极层1080的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述电极层1040上与所述电极层1080重合的部分位于所述空腔1030内；所述电极1080上与所述电极1040重合的部分位于所述空腔1030上方，对应所述空腔1030。
本实施例中，所述第一重合部的宽度等于所述边缘结构1050的宽度，所述第二重合部的宽度等于所述边缘结构1050的宽度。
图10b是本发明实施例的一种体声波谐振装置1000的俯视结构示意图。
如图10b所示，本实施例中，所述边缘结构1050呈环状。本实施例中，所述边缘结构1050呈八边形。需要说明的是，所属技术领域的技术人员知晓的其他形状的边缘结构，例如六边形、五边形等，也可以应用于本发明实施例。本实施例中，所述复合结构1060与所述边缘结构1050的四边相邻，其中，所述边缘延伸层1061与第一边和第二边相邻，所述边缘延伸层1065与第三边和第四边相邻，所述第一边及所述第二边位于所述电极层1040的第一端，所述第三边和所述第四边位于所述电极层1040的第二端。
图11a是本发明实施例的一种体声波谐振装置1100的剖面A结构示意图。
如图11a所示，本发明实施例提供一种体声波谐振装置 1100包括：基底1110；中间层1120，位于所述基底1110上，所述中间层1120的上表面侧包括空腔1130和凹槽1131，其中，所述凹槽1131位于所述空腔1130的一侧并和所述空腔1130相通，所述凹槽1131的深度小于所述空腔1130的深度；电极层1140，位于所述空腔1130内；边缘结构1150，位于所述空腔1130内，所述电极层1140位于所述边缘结构1150内侧(即，指向所述体声波谐振装置1100中轴线的一侧)；复合结构1160，位于所述边缘结构1150外侧(即，指向所述体声波谐振装置1100中轴线方向相对的一侧)，所述复合结构1160的第一端连接所述边缘结构1150，所述复合结构1160的与所述第一端相对的第二端位于所述凹槽1131内，其中，所述凹槽1131的深度等于所述复合结构1160的厚度，所述复合结构1160包括边缘延伸层1161，电连接所述边缘结构1150，及复合支撑层1163，位于所述边缘延伸层1161上，连接所述边缘结构1150，所述复合支撑层1163与所述边缘延伸层1161重合；压电层1170，位于所述电极层1140、所述边缘结构1150、所述复合支撑层1163及所述中间层1120上，覆盖所述空腔1130，其中，所述压电层1170包括第一侧1171及所述第一侧1171相对的第二侧1173，所述电极层1140、所述边缘结构1150、所述复合结构1160及所述中间层1120位于所述第一侧1171；电极层1180，位于所述第二侧1173，位于所述压电层1170上，所述边缘结构1150与所述电极层1180具有重合部，所述边缘延伸层1161及所述复合支撑层1163与所述电极层1180具有第一重合部；边缘结构1151，位于所述第二侧1173，位于所述压电层1170上，所述电极层1180位于所述边缘结构1151内侧，所述边缘结构1151与所述电极层1140具有重合部；以及复合结构1190，位于所述第二侧1173，位于所述压电层1170上，位于所述边缘结构1151外侧并连接所述边缘结构1151，所述复合结构1190包括边缘延伸层1191，位于所述第二侧1173，位于所述压电层1170上方，电连接所述边缘结构1151，及复合支撑层1193，位于所述第二侧1173，位于所述压电层1170上，位于所述压电层1170和所述边缘延伸层1191之间，连接所述边缘结构 1151，所述复合支撑层1193与所述边缘延伸层1191重合，所述边缘延伸层1191及所述复合支撑层1193与所述电极层1140具有第二重合部。
需要说明的是，所述复合支撑层1163加厚所述电极层1180和所述边缘延伸层1161之间的介质，减小所述电极层1180和所述边缘延伸层1161之间的边缘容抗，所述复合支撑层1193加厚所述电极层1140和所述边缘延伸层1191之间的介质，减小所述电极层1140和所述边缘延伸层1191之间的边缘容抗，从而提升了谐振装置的机电耦合系数。
此外，所述边缘结构1150和所述复合结构1160形成第一反射结构，位于所述电极层1140的外侧，所述边缘结构1151和所述复合结构1190形成第二反射结构，位于所述电极层1180的外侧，从而实现反射谐振区内的声波，阻隔漏波，提升Q值。
本实施例中，所述基底1110的材料包括但不限于以下至少之一：硅、碳化硅、玻璃、砷化镓、氮化镓、陶瓷。
本实施例中，所述中间层1120的材料包括但不限于以下至少之一：聚合物、绝缘电介质、多晶硅。本实施例中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。本实施例中，所述绝缘电介质包括但不限于以下至少之一：氮化铝、二氧化硅、氮化硅、氧化钛。
本实施例中，所述电极层1140的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述边缘结构1150包括第一边缘围边层，位于空腔1130内，所述第一边缘围边层电连接所述电极层1140；及第一边缘支撑层，位于空腔1130内，位于所述第一边缘围边层上，所述第一边缘支撑层连接所述电极层1140，所述第一边缘围边层和所述第一边缘支撑层重合。
本实施例中，所述第一边缘围边层的材料与所述第一边缘支撑层的材料不同。在另一个实施例中，第一边缘围边层的材料与第一边缘支撑层的材料相同。
本实施例中，所述第一边缘围边层的材料包括金属，所述第一边缘支撑层的材料包括非金属材料。在另一个实施例中，第一边缘围边层的材料包括金属，第一边缘支撑层的介质包括空气，即空气层。在另一个实施例中，第一边缘围边层的材料包括金属，第一边缘支撑层的介质包括真空，即真空层。在另一个实施例中，第一边缘围边层的材料包括金属，第一边缘支撑层的材料包括金属。
本实施例中，所述复合结构1160的厚度大于所述边缘结构1150的厚度。在另一个实施例中，压电层下的复合结构的厚度等于压电层下的边缘结构的厚度。在另一个实施例中，压电层下的复合结构的厚度小于压电层下的边缘结构的厚度。
本实施例中，所述边缘延伸层1161的材料包括金属。本实施例中，所述边缘延伸层1061的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述复合支撑层1163的介质包括非金属材料。本实施例中，所述复合支撑层1163的介质包括但不限于以下至少之一：二氧化硅、碳氧化硅、氟氧化硅、聚合物。其中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。在另一个实施例中，压电层下的复合结构中的复合支撑层的介质可以为真空，即真空层。在另一个实施例中，压电层下的复合结构中的复合支撑层的介质可以为空气，即空气层。
本实施例中，所述压电层1170为平层，还覆盖所述中间层1120的上表面侧。本实施例中，所述压电层1170的材料包括但不限于以下至少之一：氮化铝、氮化铝合金、氮化镓、氧化锌、钽酸锂、铌酸锂、锆钛酸铅、铌镁酸铅—钛酸铅。
本实施例中，所述压电层1170包括多个晶粒，所述多个晶粒包括第一晶粒和第二晶粒，其中，所述第一晶粒和所述第二晶粒是所述多个晶粒中的任意两个晶粒。所属技术领域的技术人员知晓晶粒的晶向、晶面等可以基于坐标系表示。
本实施例中，所述第一晶粒可以基于第一立体坐标系表示，所述第二晶粒可以基于第二立体坐标系表示，其中，所述第一立体坐标系至少包括沿第一方向的第一坐标轴及沿第三方向第三坐标轴，所述第二立体坐标系至少包括沿第二方向的第二坐标轴及沿第四方向的第四坐标轴，其中，所述第一坐标轴对应所述第一晶粒的高，所述第二坐标轴对应所述第二晶粒的高。
本实施例中，所述第一方向和所述第二方向相同或相反。需要说明的是，所述第一方向和所述第二方向相同指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括0度至5度；所述第一方向和所述第二方向相反指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为ac立体坐标系，其中，所述第一坐标轴为第一c轴，所述第三坐标轴为第一a轴；所述第二立体坐标系为ac立体坐标系，所述第二坐标轴为第二c轴，所述第四坐标轴为第二a轴，其中，所述第一c轴和所述第二c轴的指向相同或相反。
在另一个实施例中，所述第一立体坐标系还包括沿第五方向的第五坐标轴，所述第二立体坐标系还包括沿第六方向的第六坐标轴。在另一个实施例中，所述第一方向和所述第二方向相同或相反，所述第三方向和所述第四方向相同或相反。需要说明的是，所述第三方向和所述第四方向相同指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括0度至5度；所述第三方向和所述第四方向相反指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为xyz立体坐标系，其中，所述第一坐标轴为第一z轴，所述第三坐标轴为第一y轴，所述第五坐标轴为第一x轴；所述第二立体坐标系为xyz立体坐标系，所述第二坐标轴为第二z轴，所述第四坐标轴为第二y轴，所述第六坐标轴为第二x轴。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相同。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相同。
本实施例中，所述压电层1170包括多个晶粒，所述多个晶粒形成的晶体的摇摆曲线半峰宽低于2.5度。
需要说明的是，在平面上形成所述压电层1170可以使所述压电层1170不包括明显转向的晶粒，从而可以提高谐振装置的机电耦合系数以及谐振装置的Q值。
本实施例中，所述电极层1180的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述电极层1140上与所述电极层1180重合的部分位于所述空腔1130内；所述电极1180上与所述电极1140重合的部分位于所述空腔1130上方，对应所述空腔1130。
本实施例中，所述边缘结构1151包括第二边缘围边层，位于所述第二侧1173，位于所述压电层1170上方，所述第二边缘围边层电连接所述电极层1180；及第二边缘支撑层，位于所述第二侧1173，位于所述压电层1170上，位于所述压电层1170和所述第二边缘围边层之间，所述第二边缘支撑层连接所述电极层1180，所述第二边缘围边层和所述第二边缘支撑层重合。
本实施例中，所述第二边缘围边层的材料与所述第二边缘支撑层的材料不同。在另一个实施例中，第二边缘围边层的材料与第二边缘支撑层的材料相同。
本实施例中，所述第二边缘围边层的材料包括金属，所述第二边缘支撑层的材料包括非金属材料。在另一个实施例中，第二边缘围边层的材料包括金属，第二边缘支撑层的介质包括空气，即空气层。在另一个实施例中，第二边缘围边层的材料包括金属，第二边缘支撑层的介质包括真空，即真空层。在另一个实施例中，第二边缘围边层的材料包括金属，第二边缘支撑层的材料包括金属。
本实施例中，所述复合结构1190的厚度大于所述边缘结构1151的厚度。在另一个实施例中，压电层上的复合结构的厚度等于压电层上的边缘结构的厚度。在另一个实施例中，压电层上的复合结构的厚度小于压电层上的边缘结构的厚度。
本实施例中，所述边缘延伸层1191的材料包括金属。本实施例中，所述边缘延伸层1191的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述复合支撑层1193的介质包括非金属材料。本实施例中，所述复合支撑层1193的介质包括但不限于以下至少之一：二氧化硅、碳氧化硅、氟氧化硅、聚合物。其中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。在另一个实施例中，压电层上的复合结构中的复合支撑层的介质可以为真空，即真空层。在另一个实施例中，压电层上的复合结构中的复合支撑层的介质可以为空气，即空气层。
本实施例中，所述复合结构1160和所述复合结构1190无重合部。本实施例中，所述复合结构1160和所述复合结构1190位于所述电极层1140两侧。
本实施例中，所述第一重合部的宽度等于所述边缘结构1150的宽度，所述第二重合部的宽度等于所述边缘结构1151的宽度。
图11b是本发明实施例的一种体声波谐振装置1100的俯视结构示意图。
如图11b所示，本实施例中，所述边缘结构1150和所述边缘结构1151部分重合，形成围边结构。本实施例中，所述围边结构呈八边形。需要说明的是，所属技术领域的技术人员知晓的其他形状的围边结构，例如六边形、五边形等，也可以应用于本发明实施例。本实施例中，所述复合结构1160与所述边缘结构1150的一边相邻，所述复合结构1190与所述边缘结构1151的一边相邻。
图12a是本发明实施例的一种体声波谐振装置1200的剖面A结构示意图。
如图12a所示，本发明实施例提供一种体声波谐振装置1200包括：基底1210；中间层1220，位于所述基底1210上，所述中间层1220的上表面侧包括空腔1230和凹槽1231，其中，所述凹槽1231位于所述空腔1230的一侧并和所述空腔1230相通，所述凹槽1231的深度小于所述空腔1230的深度；电极层1240，所述电极层1240的第一端1241位于所述空腔1230内，所述电极层1240的第二端1243位于所述凹槽1231内，其中，所述凹槽1231的深度等于所述电极层1240的厚度；压电层1250，位于所述电极层1240及所述中间层1220上，覆盖所述空腔1230，其中，所述压电层1250包括第一侧1251及所述第一侧1251相对的第二侧1253，所述电极层1240及所述中间层1220位于所述第一侧1251；电极层1260，位于所述第二侧1253，位于所述压电层1250上；以及复合结构1270，所述复合结构1270包括：边缘部1271，位于所述第二侧1253，位于所述压电层1250上，所述电极层1260位于所述边缘部1271内侧(即，指向所述体声波谐振装置1200中轴线的一侧)，所述边缘部1271与所述电极层1240具有重合部；延伸部(未标记)，位于所述第二侧 1253，位于所述压电层1250上，位于所述边缘部1271外侧(即，朝向所述体声波谐振装置1200中轴线方向相对的一侧)并连接所述边缘部1271；所述延伸部包括边缘延伸层1273，位于所述第二侧1253，位于所述压电层1250上方，电连接所述边缘部1271，及复合支撑层1275，位于所述第二侧1253，位于所述压电层1250上，位于所述压电层1250和所述边缘延伸层1273之间，连接所述边缘部1271，所述复合支撑层1275与所述边缘延伸层1273重合，所述边缘延伸层1273及所述复合支撑层1275与所述电极层1240具有第一重合部；所述延伸部还包括边缘延伸层1277，位于所述第二侧1253，位于所述压电层1250上方，电连接所述边缘部1271，及复合支撑层1279，位于所述第二侧1253，位于所述压电层1250上，位于所述压电层1250和所述边缘延伸层1277之间，连接所述边缘部1271，所述复合支撑层1279与所述边缘延伸层1277重合，所述边缘延伸层1277及所述复合支撑层1279与所述电极层1240具有第二重合部。
需要说明的是，所述复合支撑层1275加厚所述电极层1240和所述边缘延伸层1273之间的介质，减小所述电极层1240和所述边缘延伸层1273之间的边缘容抗，所述复合支撑层1279加厚所述电极层1240和所述边缘延伸层1277之间的介质，减小所述电极层1240和所述边缘延伸层1277之间的边缘容抗，从而提升了谐振装置的机电耦合系数。
此外，所述边缘部1271和所述延伸部形成反射结构，位于所述电极层1260的外侧，从而实现反射谐振区内的声波，阻隔漏波，提升Q值。
本实施例中，所述基底1210的材料包括但不限于以下至少之一：硅、碳化硅、玻璃、砷化镓、氮化镓、陶瓷。
本实施例中，所述中间层1220的材料包括但不限于以下至少之一：聚合物、绝缘电介质、多晶硅。本实施例中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧 树脂光刻胶(例如，SU-8)、聚酰亚胺。本实施例中，所述绝缘电介质包括但不限于以下至少之一：氮化铝、二氧化硅、氮化硅、氧化钛。
本实施例中，所述电极层1240的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述压电层1250为平层，还覆盖所述中间层1220的上表面侧。本实施例中，所述压电层1250的材料包括但不限于以下至少之一：氮化铝、氮化铝合金、氮化镓、氧化锌、钽酸锂、铌酸锂、锆钛酸铅、铌镁酸铅—钛酸铅。
本实施例中，所述压电层1250包括多个晶粒，所述多个晶粒包括第一晶粒和第二晶粒，其中，所述第一晶粒和所述第二晶粒是所述多个晶粒中的任意两个晶粒。所属技术领域的技术人员知晓晶粒的晶向、晶面等可以基于坐标系表示。
本实施例中，所述第一晶粒可以基于第一立体坐标系表示，所述第二晶粒可以基于第二立体坐标系表示，其中，所述第一立体坐标系至少包括沿第一方向的第一坐标轴及沿第三方向第三坐标轴，所述第二立体坐标系至少包括沿第二方向的第二坐标轴及沿第四方向的第四坐标轴，其中，所述第一坐标轴对应所述第一晶粒的高，所述第二坐标轴对应所述第二晶粒的高。
本实施例中，所述第一方向和所述第二方向相同或相反。需要说明的是，所述第一方向和所述第二方向相同指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括0度至5度；所述第一方向和所述第二方向相反指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为ac立体坐标系，其中，所述第一坐标轴为第一c轴，所述第三坐标轴为第一a轴；所述第二立体坐标系为ac立体坐标系，所述第二坐标轴为第二c轴，所述第四坐标轴为第二a轴，其中，所述第一c轴和所述第二c 轴的指向相同或相反。
在另一个实施例中，所述第一立体坐标系还包括沿第五方向的第五坐标轴，所述第二立体坐标系还包括沿第六方向的第六坐标轴。在另一个实施例中，所述第一方向和所述第二方向相同或相反，所述第三方向和所述第四方向相同或相反。需要说明的是，所述第三方向和所述第四方向相同指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括0度至5度；所述第三方向和所述第四方向相反指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为xyz立体坐标系，其中，所述第一坐标轴为第一z轴，所述第三坐标轴为第一y轴，所述第五坐标轴为第一x轴；所述第二立体坐标系为xyz立体坐标系，所述第二坐标轴为第二z轴，所述第四坐标轴为第二y轴，所述第六坐标轴为第二x轴。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相同。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相同。
本实施例中，所述压电层1250包括多个晶粒，所述多个晶粒形成的晶体的摇摆曲线半峰宽低于2.5度。
需要说明的是，在平面上形成所述压电层1250可以使所述压电层1250不包括明显转向的晶粒，从而可以提高谐振装置的机电耦合系数以及谐振装置的Q值。
本实施例中，所述电极层1260的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述电极层1240上与所述电极层1260重合的部分位于所述空腔1230内；所述电极1260上与所述电极1240重合的部分位于所述空腔1230上方，对应所述空腔1230。
本实施例中，所述边缘部1271包括边缘围边层，位于所述第二侧1253，位于所述压电层1250上方，所述边缘围边层电连接所述电极层1260；及边缘支撑层，位于所述第二侧1253，位于所述压电层1250上，位于所述压电层1250和所述边缘围边层之间，所述边缘支撑层连接所述电极层1260，所述边缘围边层和所述边缘支撑层重合。
本实施例中，所述边缘围边层的材料与所述边缘支撑层的材料不同。在另一个实施例中，边缘围边层的材料与边缘支撑层的材料相同。
本实施例中，所述边缘围边层的材料包括金属，所述边缘支撑层的材料包括非金属材料。在另一个实施例中，边缘围边层的材料包括金属，边缘支撑层的介质包括空气，即空气层。在另一个实施例中，边缘围边层的材料包括金属，边缘支撑层的介质包括真空，即真空层。在另一个实施例中，边缘围边层的材料包括金属，边缘支撑层的材料包括金属。
本实施例中，所述延伸部的厚度等于所述边缘部1271的厚度。
本实施例中，所述边缘延伸层1273的材料包括金属。本实施例中，所述边缘延伸层1273的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述复合支撑层1275的介质包括非金属材料。本实施例中，所述复合支撑层1275的介质包括但不限于以下至少之一：二氧化硅、碳氧化硅、氟氧化硅、聚合物。其中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环 氧树脂光刻胶(例如，SU-8)、聚酰亚胺。在另一个实施例中，压电层上的延伸部的第一复合支撑层的介质可以为真空，即真空层。在另一个实施例中，压电层上的延伸部的第一复合支撑层的介质可以为空气，即空气层。
本实施例中，所述复合支撑层1275的厚度大于所述边缘支撑层的厚度。在另一个实施例中，延伸部的第一复合支撑层的厚度等于边缘部的边缘支撑层的厚度。在另一个实施例中，延伸部的第一复合支撑层的厚度小于边缘部的边缘支撑层的厚度。
本实施例中，所述边缘延伸层1277的材料包括金属。本实施例中，所述边缘延伸层1277的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述复合支撑层1279的介质包括非金属材料。本实施例中，所述复合支撑层1279的介质包括但不限于以下至少之一：二氧化硅、碳氧化硅、氟氧化硅、聚合物。其中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。在另一个实施例中，压电层上的延伸部的第二复合支撑层的介质可以为真空，即真空层。在另一个实施例中，压电层上的延伸部的第二复合支撑层的介质可以为空气，即空气层。
本实施例中，所述复合支撑层1279的厚度大于所述边缘支撑层的厚度。在另一个实施例中，延伸部的第二复合支撑层的厚度等于边缘部的边缘支撑层的厚度。在另一个实施例中，延伸部的第二复合支撑层的厚度小于边缘部的边缘支撑层的厚度。
本实施例中，所述边缘延伸层1273和所述边缘延伸层1277无重合部。本实施例中，所述边缘延伸层1273和所述边缘延伸层1277位于所述电极层1260两侧。
本实施例中，所述第一重合部的宽度等于所述边缘部 1271的宽度，所述第二重合部的宽度等于所述边缘部1271的宽度。
图12b是本发明实施例的一种体声波谐振装置1200的俯视结构示意图。
如图12b所示，本实施例中，所述边缘部1271呈环状。本实施例中，所述边缘部1271呈八边形。需要说明的是，所属技术领域的技术人员知晓的其他形状的边缘部，例如六边形、五边形等，也可以应用于本发明实施例。本实施例中，所述延伸部与所述边缘部1271的两边相邻，其中，所述边缘延伸层1273与第一边相邻，所述边缘延伸层1277与第二边相邻，所述第一边和所述第二边分别位于所述电极层1260的两端。
图13a是本发明实施例的一种体声波谐振装置1300的剖面A结构示意图。
如图13a所示，本发明实施例提供一种体声波谐振装置1300包括：基底1310；中间层1320，位于所述基底1310上，所述中间层1320的上表面侧包括空腔1330和凹槽1331，其中，所述凹槽1331位于所述空腔1330的一侧并和所述空腔1330相通，所述凹槽1331的深度小于所述空腔1330的深度；电极层1340，位于所述空腔1330内；复合结构1350，所述复合结构1350包括：边缘部1351，位于所述空腔1330内，所述电极层1340位于所述边缘部1351内侧(即，指向所述体声波谐振装置1300中轴线的一侧)；延伸部(未标记)，位于所述边缘部1351外侧(即，指向所述体声波谐振装置1300中轴线方向相对的一侧)，所述延伸部的第一端位于所述空腔1330内，所述延伸部的与所述第一端相对的第二端位于所述凹槽1331内，其中，所述凹槽1331的深度等于所述延伸部的厚度；其中，所述延伸部包括边缘延伸层1353，电连接所述边缘部1351，及复合支撑层1355，位于所述边缘延伸层1353上，连接所述边缘部1351，所述复合支撑层1355与所述边缘延伸层1353重合；所述延伸部还包括边缘延伸层1357，位于所述空腔1330内，电连接所述边缘部1351，及复 合支撑层1359，位于所述边缘延伸层1357上，位于所述空腔1330内，连接所述边缘部1351，所述复合支撑层1359与所述边缘延伸层1357重合；压电层1360，位于所述电极层1340、所述边缘部1351、所述复合支撑层1355、所述复合支撑层1359及所述中间层1320上，覆盖所述空腔1330，其中，所述压电层1360包括第一侧1361及所述第一侧1361相对的第二侧1363，所述电极层1340、所述复合结构1350及所述中间层1320位于所述第一侧1361；电极层1370，位于所述第二侧1363，位于所述压电层1360上，所述边缘部1351与所述电极层1370具有重合部，所述边缘延伸层1353及所述复合支撑层1355与所述电极层1370具有第一重合部，所述边缘延伸层1357及所述复合支撑层1359与所述电极层1370具有第二重合部。
需要说明的是，所述复合支撑层1355加厚所述电极层1370和所述边缘延伸层1353之间的介质，减小所述电极层1370和所述边缘延伸层1353之间的边缘容抗，所述复合支撑层1359加厚所述电极层1370和所述边缘延伸层1357之间的介质，减小所述电极层1370和所述边缘延伸层1357之间的边缘容抗，从而提升了谐振装置的机电耦合系数。
此外，所述边缘部1351和所述延伸部形成反射结构，位于所述电极层1340的外侧，从而实现反射谐振区内的声波，阻隔漏波，提升Q值。
本实施例中，所述基底1310的材料包括但不限于以下至少之一：硅、碳化硅、玻璃、砷化镓、氮化镓、陶瓷。
本实施例中，所述中间层1320的材料包括但不限于以下至少之一：聚合物、绝缘电介质、多晶硅。本实施例中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。本实施例中，所述绝缘电介质包括但不限于以下至少之一：氮化铝、二氧化硅、氮化硅、氧化钛。
本实施例中，所述电极层1340的材料包括但不限于以 下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述边缘部1351包括边缘围边层，位于空腔1330内，所述边缘围边层电连接所述电极层1340；及边缘支撑层，位于空腔1330内，位于所述边缘围边层上，所述边缘支撑层连接所述电极层1340，所述边缘围边层和所述边缘支撑层重合。
本实施例中，所述边缘围边层的材料与所述边缘支撑层的材料不同。在另一个实施例中，边缘围边层的材料与边缘支撑层的材料相同。
本实施例中，所述边缘围边层的材料包括金属，所述边缘支撑层的材料包括非金属材料。在另一个实施例中，边缘围边层的材料包括金属，边缘支撑层的介质包括空气，即空气层。在另一个实施例中，边缘围边层的材料包括金属，边缘支撑层的介质包括真空，即真空层。在另一个实施例中，边缘围边层的材料包括金属，边缘支撑层的材料包括金属。
本实施例中，所述延伸部的厚度等于所述边缘部1351的厚度。
本实施例中，所述边缘延伸层1353的材料包括金属。本实施例中，所述边缘延伸层1353的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述复合支撑层1355的介质包括非金属材料。本实施例中，所述复合支撑层1355的介质包括但不限于以下至少之一：二氧化硅、碳氧化硅、氟氧化硅、聚合物。其中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。在另一个实施例中，压电层下的延伸部的第一复合支撑层的介质可以为真空，即真空层。在另一个实施例中，压电层下的延伸部的第一复合支撑层的介质可以为空气，即空气层。
本实施例中，所述复合支撑层1355的厚度大于所述边缘支撑层的厚度。在另一个实施例中，延伸部的第一复合支撑层的厚度等于边缘部的边缘支撑层的厚度。在另一个实施例中，延伸部的第一复合支撑层的厚度小于边缘部的边缘支撑层的厚度。
本实施例中，所述边缘延伸层1357的材料包括金属。本实施例中，所述边缘延伸层1357的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述复合支撑层1359的介质包括非金属材料。本实施例中，所述复合支撑层1359的介质包括但不限于以下至少之一：二氧化硅、碳氧化硅、氟氧化硅、聚合物。其中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。在另一个实施例中，压电层下的延伸部的第二复合支撑层的介质可以为真空，即真空层。在另一个实施例中，压电层下的延伸部的第二复合支撑层的介质可以为空气，即空气层。
本实施例中，所述复合支撑层1359的厚度大于所述边缘支撑层的厚度。在另一个实施例中，延伸部的第二复合支撑层的厚度等于边缘部的边缘支撑层的厚度。在另一个实施例中，延伸部的第二复合支撑层的厚度小于边缘部的边缘支撑层的厚度。
本实施例中，所述边缘延伸层1353和所述边缘延伸层1357无重合部。本实施例中，所述边缘延伸层1353和所述边缘延伸层1357位于所述电极层1340两侧。
本实施例中，所述压电层1360为平层，还覆盖所述中间层1320的上表面侧。本实施例中，所述压电层1360的材料包括但不限于以下至少之一：氮化铝、氮化铝合金、氮化镓、氧化锌、钽酸锂、铌酸锂、锆钛酸铅、铌镁酸铅—钛酸铅。
本实施例中，所述压电层1360包括多个晶粒，所述多 个晶粒包括第一晶粒和第二晶粒，其中，所述第一晶粒和所述第二晶粒是所述多个晶粒中的任意两个晶粒。所属技术领域的技术人员知晓晶粒的晶向、晶面等可以基于坐标系表示。
本实施例中，所述第一晶粒可以基于第一立体坐标系表示，所述第二晶粒可以基于第二立体坐标系表示，其中，所述第一立体坐标系至少包括沿第一方向的第一坐标轴及沿第三方向第三坐标轴，所述第二立体坐标系至少包括沿第二方向的第二坐标轴及沿第四方向的第四坐标轴，其中，所述第一坐标轴对应所述第一晶粒的高，所述第二坐标轴对应所述第二晶粒的高。
本实施例中，所述第一方向和所述第二方向相同或相反。需要说明的是，所述第一方向和所述第二方向相同指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括0度至5度；所述第一方向和所述第二方向相反指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为ac立体坐标系，其中，所述第一坐标轴为第一c轴，所述第三坐标轴为第一a轴；所述第二立体坐标系为ac立体坐标系，所述第二坐标轴为第二c轴，所述第四坐标轴为第二a轴，其中，所述第一c轴和所述第二c轴的指向相同或相反。
在另一个实施例中，所述第一立体坐标系还包括沿第五方向的第五坐标轴，所述第二立体坐标系还包括沿第六方向的第六坐标轴。在另一个实施例中，所述第一方向和所述第二方向相同或相反，所述第三方向和所述第四方向相同或相反。需要说明的是，所述第三方向和所述第四方向相同指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括0度至5度；所述第三方向和所述第四方向相反指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为xyz立体坐 标系，其中，所述第一坐标轴为第一z轴，所述第三坐标轴为第一y轴，所述第五坐标轴为第一x轴；所述第二立体坐标系为xyz立体坐标系，所述第二坐标轴为第二z轴，所述第四坐标轴为第二y轴，所述第六坐标轴为第二x轴。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相同。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相同。
本实施例中，所述压电层1360包括多个晶粒，所述多个晶粒形成的晶体的摇摆曲线半峰宽低于2.5度。
需要说明的是，在平面上形成所述压电层1360可以使所述压电层1360不包括明显转向的晶粒，从而可以提高谐振装置的机电耦合系数以及谐振装置的Q值。
本实施例中，所述电极层1370的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述电极层1340上与所述电极层1370重合的部分位于所述空腔1330内；所述电极1370上与所述电极1340重合的部分位于所述空腔1330上方，对应空腔1330。
本实施例中，所述第一重合部的宽度等于所述边缘部1351的宽度，所述第二重合部的宽度等于所述边缘部1351的宽度。
图13b是本发明实施例的一种体声波谐振装置1300的俯视结构示意图。
如图13b所示，本实施例中，所述边缘部1351呈环状。本实施例中，所述边缘部1351呈八边形。需要说明的是，所属技术领域的技术人员知晓的其他形状的边缘部，例如六边形、五边形等， 也可以应用于本发明实施例。本实施例中，所述延伸部与所述边缘部1351的六边相邻，其中，所述边缘延伸层1353与第一边、第二边及第三边相邻，所述边缘延伸层1357与第四边、第五边及第六边相邻，所述第一边、所述第二边及所述第三边位于所述电极层1340的第一端，所述第四边、所述第五边及所述第六边位于所述电极层1340的第二端。
图14a是本发明实施例的一种体声波谐振装置1400的剖面A结构示意图。
如图14a所示，本发明实施例提供一种体声波谐振装置1400包括：基底1410；中间层1420，位于所述基底1410上，所述中间层1420的上表面侧包括空腔1430和凹槽1431，其中，所述凹槽1431位于所述空腔1430的一侧并和所述空腔1430相通，所述凹槽1431的深度小于所述空腔1430的深度；电极层1440，位于所述空腔1430内；复合结构1450，所述复合结构1450包括：边缘部1451，位于所述空腔1430内，所述电极层1440位于所述边缘部1451内侧(即，指向所述体声波谐振装置1400中轴线的一侧)；第一延伸部(未标记)，位于所述边缘部1451外侧(即，指向所述体声波谐振装置1400中轴线方向相对的一侧)，所述第一延伸部的第一端连接所述边缘部1451，所述第一延伸部的与所述第一端相对的第二端位于所述凹槽1431内，其中，所述凹槽1431的深度等于所述第一延伸部的厚度，所述第一延伸部包括边缘延伸层1453，电连接所述边缘部1451，及复合支撑层1455，位于所述边缘延伸层1453上，连接所述边缘部1451，所述复合支撑层1455与所述边缘延伸层1453重合；压电层1460，位于所述电极层1440、所述边缘部1451、所述复合支撑层1455及所述中间层1420上，覆盖所述空腔1430，其中，所述压电层1460包括第一侧1461及所述第一侧1461相对的第二侧1463，所述电极层1440、所述复合结构1450及所述中间层1420位于所述第一侧1461；电极层1470，位于所述第二侧1463，位于所述压电层1460上，所述边缘部1451与所述电极层1470具有重合部，所述边缘延伸层 1453及所述复合支撑层1455与所述电极层1470具有第一重合部；复合结构1480，所述复合结构1480包括：边缘部1481，位于所述第二侧1463，位于所述压电层1460上，所述电极层1470位于所述边缘部1481内侧，所述边缘部1481与所述电极层1440具有重合部；第二延伸部(未标记)，位于所述第二侧1463，位于所述压电层1460上，位于所述边缘部1481外侧并连接所述边缘部1481，所述第二延伸部包括边缘延伸层1483，位于所述第二侧1463，位于所述压电层1460上方，电连接所述边缘部1481，及复合支撑层1485，位于所述第二侧1463，位于所述压电层1460上，位于所述压电层1460和所述边缘延伸层1483之间，连接所述边缘部1481，所述复合支撑层1485与所述边缘延伸层1483重合，所述边缘延伸层1483及所述复合支撑层1485与所述电极层1440具有第二重合部。
需要说明的是，所述复合支撑层1455加厚所述电极层1470和所述边缘延伸层1453之间的介质，减小所述电极层1470和所述边缘延伸层1453之间的边缘容抗，所述复合支撑层1485加厚所述电极层1440和所述边缘延伸层1483之间的介质，减小所述电极层1440和所述边缘延伸层1483之间的边缘容抗，从而提升了谐振装置的机电耦合系数。
此外，所述边缘部1451和所述第一延伸部形成第一反射结构，位于所述电极层1440的外侧，所述边缘部1481和所述第二延伸部形成第二反射结构，位于所述电极层1470的外侧，从而实现反射谐振区内的声波，阻隔漏波，提升Q值。
本实施例中，所述基底1410的材料包括但不限于以下至少之一：硅、碳化硅、玻璃、砷化镓、氮化镓、陶瓷。
本实施例中，所述中间层1420的材料包括但不限于以下至少之一：聚合物、绝缘电介质、多晶硅。本实施例中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。本实施例中，所述绝缘电介 质包括但不限于以下至少之一：氮化铝、二氧化硅、氮化硅、氧化钛。
本实施例中，所述电极层1440的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述边缘部1451包括第一边缘围边层，位于空腔1130内，所述第一边缘围边层电连接所述电极层1440；及第一边缘支撑层，位于空腔1130内，位于所述第一边缘围边层上，所述第一边缘支撑层连接所述电极层1440，所述第一边缘围边层和所述第一边缘支撑层重合。
本实施例中，所述第一边缘围边层的材料与所述第一边缘支撑层的材料不同。在另一个实施例中，第一边缘围边层的材料与第一边缘支撑层的材料相同。
本实施例中，所述第一边缘围边层的材料包括金属，所述第一边缘支撑层的材料包括非金属材料。在另一个实施例中，第一边缘围边层的材料包括金属，第一边缘支撑层的介质包括空气，即空气层。在另一个实施例中，第一边缘围边层的材料包括金属，第一边缘支撑层的介质包括真空，即真空层。在另一个实施例中，第一边缘围边层的材料包括金属，第一边缘支撑层的材料包括金属。
本实施例中，所述第一延伸部的厚度等于所述边缘部1451的厚度。
本实施例中，所述边缘延伸层1453的材料包括金属。本实施例中，所述边缘延伸层1453的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述复合支撑层1455的介质包括非金属材料。本实施例中，所述复合支撑层1455的介质包括但不限于以下至少之一：二氧化硅、碳氧化硅、氟氧化硅、聚合物。其中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。在另一个实施例中，压电 层下的第一延伸部的第一复合支撑层的介质可以为真空，即真空层。在另一个实施例中，压电层下的第一延伸部的第一复合支撑层的介质可以为空气，即空气层。
本实施例中，所述复合支撑层1455的厚度大于所述第一边缘支撑层的厚度。在另一个实施例中，第一延伸部的第一复合支撑层的厚度等于第一边缘部的第一边缘支撑层的厚度。在另一个实施例中，第一延伸部的第一复合支撑层的厚度小于第一边缘部的第一边缘支撑层的厚度。
本实施例中，所述压电层1460为平层，还覆盖所述中间层1420的上表面侧。本实施例中，所述压电层1460的材料包括但不限于以下至少之一：氮化铝、氮化铝合金、氮化镓、氧化锌、钽酸锂、铌酸锂、锆钛酸铅、铌镁酸铅—钛酸铅。
本实施例中，所述压电层1460包括多个晶粒，所述多个晶粒包括第一晶粒和第二晶粒，其中，所述第一晶粒和所述第二晶粒是所述多个晶粒中的任意两个晶粒。所属技术领域的技术人员知晓晶粒的晶向、晶面等可以基于坐标系表示。
本实施例中，所述第一晶粒可以基于第一立体坐标系表示，所述第二晶粒可以基于第二立体坐标系表示，其中，所述第一立体坐标系至少包括沿第一方向的第一坐标轴及沿第三方向第三坐标轴，所述第二立体坐标系至少包括沿第二方向的第二坐标轴及沿第四方向的第四坐标轴，其中，所述第一坐标轴对应所述第一晶粒的高，所述第二坐标轴对应所述第二晶粒的高。
本实施例中，所述第一方向和所述第二方向相同或相反。需要说明的是，所述第一方向和所述第二方向相同指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括0度至5度；所述第一方向和所述第二方向相反指：沿所述第一方向的向量和沿所述第二方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为ac立体坐标系，其中，所述第一坐标轴为第一c轴，所述第三坐标轴为第一a轴；所述第二立体坐标系为ac立体坐标系，所述第二坐标轴为第二c轴，所述第四坐标轴为第二a轴，其中，所述第一c轴和所述第二c轴的指向相同或相反。
在另一个实施例中，所述第一立体坐标系还包括沿第五方向的第五坐标轴，所述第二立体坐标系还包括沿第六方向的第六坐标轴。在另一个实施例中，所述第一方向和所述第二方向相同或相反，所述第三方向和所述第四方向相同或相反。需要说明的是，所述第三方向和所述第四方向相同指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括0度至5度；所述第三方向和所述第四方向相反指：沿所述第三方向的向量和沿所述第四方向的向量的夹角范围包括175度至180度。
在另一个实施例中，所述第一立体坐标系为xyz立体坐标系，其中，所述第一坐标轴为第一z轴，所述第三坐标轴为第一y轴，所述第五坐标轴为第一x轴；所述第二立体坐标系为xyz立体坐标系，所述第二坐标轴为第二z轴，所述第四坐标轴为第二y轴，所述第六坐标轴为第二x轴。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相同。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相同，所述第一y轴和所述第二y轴的指向相反。在另一个实施例中，所述第一z轴和所述第二z轴的指向相反,所述第一y轴和所述第二y轴的指向相同。
本实施例中，所述压电层1460包括多个晶粒，所述多个晶粒形成的晶体的摇摆曲线半峰宽低于2.5度。
需要说明的是，在平面上形成所述压电层1460可以使所述压电层1460不包括明显转向的晶粒，从而可以提高谐振装置的 机电耦合系数以及谐振装置的Q值。
本实施例中，所述电极层1470的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述电极层1440上与所述电极层1470重合的部分位于所述空腔1430内；所述电极1470上与所述电极1440重合的部分位于所述空腔1430上方，对应所述空腔1430。
本实施例中，所述边缘部1481包括第二边缘围边层，位于所述第二侧1463，位于所述压电层1460上方，所述第二边缘围边层电连接所述电极层1470；及第二边缘支撑层，位于所述第二侧1463，位于所述压电层1460上，位于所述压电层1460和所述第二边缘围边层之间，所述第二边缘支撑层连接所述电极层1470，所述第二边缘围边层和所述第二边缘支撑层重合。
本实施例中，所述第二边缘围边层的材料与所述第二边缘支撑层的材料不同。在另一个实施例中，第二边缘围边层的材料与第二边缘支撑层的材料相同。
本实施例中，所述第二边缘围边层的材料包括金属，所述第二边缘支撑层的材料包括非金属材料。在另一个实施例中，第二边缘围边层的材料包括金属，第二边缘支撑层的介质包括空气，即空气层。在另一个实施例中，第二边缘围边层的材料包括金属，第二边缘支撑层的介质包括真空，即真空层。在另一个实施例中，第二边缘围边层的材料包括金属，第二边缘支撑层的材料包括金属。
本实施例中，所述第二延伸部的厚度等于所述边缘部1481的厚度。
本实施例中，所述边缘延伸层1483的材料包括金属。本实施例中，所述边缘延伸层1483的材料包括但不限于以下至少之一：钼、钌、钨、铂、铱、铝、铍。
本实施例中，所述复合支撑层1485的介质包括非金属 材料。本实施例中，所述复合支撑层1485的介质包括但不限于以下至少之一：二氧化硅、碳氧化硅、氟氧化硅、聚合物。其中，所述聚合物包括但不限于以下至少之一：苯并环丁烯(即，BCB)、光感环氧树脂光刻胶(例如，SU-8)、聚酰亚胺。在另一个实施例中，压电层上的第二延伸部的第二复合支撑层的介质可以为真空，即真空层。在另一个实施例中，压电层上的第二延伸部的第二复合支撑层的介质可以为空气，即空气层。
本实施例中，所述复合支撑层1485的厚度大于所述第二边缘支撑层的厚度。在另一个实施例中，第二延伸部的第二复合支撑层的厚度等于第二边缘部的第二边缘支撑层的厚度。在另一个实施例中，第二延伸部的第二复合支撑层的厚度小于第二边缘部的第二边缘支撑层的厚度。
本实施例中，所述第一延伸部和所述第二延伸部无重合部。本实施例中，所述第一延伸部和所述第二延伸部位于所述电极层1440与所述电极层1470的重合部两侧。
本实施例中，所述第一重合部的宽度等于所述边缘部1451的宽度，所述第二重合部的宽度等于所述边缘部1481的宽度。
图14b是本发明实施例的一种体声波谐振装置1400的俯视结构示意图。
如图14b所示，本实施例中，所述边缘部1451和所述边缘部1481部分重合，形成围边结构。本实施例中，所述围边结构呈八边形。需要说明的是，所属技术领域的技术人员知晓的其他形状的围边结构，例如六边形、五边形等，也可以应用于本发明实施例。本实施例中，所述第一延伸部与所述边缘部1451的一边相邻，所述第二延伸部与所述边缘部1481的一边相邻。
图15是一种无线通信装置1500的结构示意图。如图15所示，所述无线通信装置1500包括：射频前端装置1510、基带处 理装置1530及天线1550，所述射频前端装置1510的第一端连接所述基带处理装置1530，所述射频前端装置1510的第二端连接所述天线1550。其中，所述射频前端装置1510包括：滤波装置1511、滤波装置1513、多工装置1515、功率放大装置1517及低噪声放大装置1519；其中，所述滤波装置1511与所述功率放大装置1517电连接；其中，所述滤波装置1513与所述低噪声放大装置1519电连接；其中，所述多工装置1515包括至少一个发射滤波装置(未图示)及至少一个接收滤波装置(未图示)。其中，所述滤波装置1511包括至少一个上述实施例其中之一提供的体声波谐振装置，所述滤波装置1513包括至少一个上述实施例其中之一提供的体声波谐振装置。其中，所述至少一个发射滤波装置包括至少一个上述实施例其中之一提供的体声波谐振装置，或者，所述至少一个接收滤波装置包括至少一个上述实施例其中之一提供的体声波谐振装置。
综上所述，本发明实施例提供的体声波谐振装置包括复合结构，电连接第一电极层或所述第一电极的边缘结构，所述复合结构包括边缘延伸层及复合支撑层，所述复合支撑层加厚所述边缘延伸层与第二电极层之间的介质厚度，从而降低边缘容抗，提升机电耦合系数。此外，边缘结构和复合结构可以形成反射结构，位于电极层的外侧，从而实现反射谐振区内的声波，阻隔漏波，提升Q值。
应该理解，此处的例子和实施例仅是示例性的，本领域技术人员可以在不背离本申请和所附权利要求所限定的本发明的精神和范围的情况下，做出各种修改和更正。

Claims (45)

  1. 一种体声波谐振装置，其特征在于，包括：
    第一层，所述第一层包括空腔；
    第一电极层，所述第一电极层的至少一端位于所述空腔内；
    压电层，位于所述第一电极层上，覆盖所述空腔，所述压电层包括第一侧及与所述第一侧垂直方向上相对的第二侧，所述第一电极层位于所述第一侧；
    第二电极层，位于所述第二侧，位于所述压电层上，所述第二电极层上的与所述第一电极层的重合部位于所述空腔上方，对应所述空腔；以及
    第一复合结构，位于所述第一侧，接触所述压电层，与所述第一电极层水平方向上相邻，所述第一复合结构靠近所述第一电极层的第一端位于所述空腔内，所述第一复合结构远离所述第一电极层的所述第一端水平方向上相对的第二端嵌入所述第一层，所述第一复合结构包括第一边缘延伸层及第一支撑层，所述第一支撑层位于所述压电层与所述第一边缘延伸层之间，用于降低边缘容抗。
  2. 如权利要求1所述的体声波谐振装置，其特征在于，所述第一边缘延伸层的材料包括金属。
  3. 如权利要求1所述的体声波谐振装置，其特征在于，所述第一支撑层的介质包括以下之一：非金属材料、空气、真空。
  4. 如权利要求1所述的体声波谐振装置，其特征在于，所述第一电极层呈多边形，所述第一复合结构与所述第一电极层的至少一边相邻。
  5. 如权利要求1所述的体声波谐振装置，其特征在于，还包括：第一边缘结构，位于所述第一侧，接触所述压电层，所述第一边缘结构包括第三侧和所述第三侧水平方向上相对的第四侧，所述 第一电极层位于所述第三侧，所述第一复合结构位于所述第四侧。
  6. 如权利要求5所述的体声波谐振装置，其特征在于，所述第一边缘结构至少部分包围所述第一电极层。
  7. 如权利要求5所述的体声波谐振装置，其特征在于，所述第一电极层位于所述第一边缘结构的内侧，所述第一复合结构位于所述第一边缘结构的外侧。
  8. 如权利要求5所述的体声波谐振装置，其特征在于，所述第一边缘结构包括第一边缘围边层，所述第一边缘围边层的材料包括金属，所述第一边缘围边层连接所述第一电极层，所述第一边缘围边层还连接所述第一边缘延伸层。
  9. 如权利要求8所述的体声波谐振装置，其特征在于，所述第一边缘结构还包括第一边缘支撑层，接触所述压电层，所述第一边缘支撑层位于所述压电层与所述第一边缘围边层之间，用于降低引入所述第一边缘围边层产生的寄生谐振的谐振频率。
  10. 如权利要求9所述的体声波谐振装置，其特征在于，所述第一边缘支撑层的介质包括以下之一：非金属材料、空气、真空。
  11. 如权利要求5所述的体声波谐振装置，其特征在于，所述第一边缘结构与第二电极层具有第一重合部。
  12. 如权利要求5所述的体声波谐振装置，其特征在于，所述第一复合结构与所述第二电极层具有第二重合部，所述第二重合部的宽度等于所述第一边缘结构的宽度。
  13. 如权利要求5所述的体声波谐振装置，其特征在于，所述第一边缘结构呈多边形，所述第一复合结构与所述第一边缘结构的至少一边相邻。
  14. 如权利要求1所述的体声波谐振装置，其特征在于，所述第一复合结构还包括第一边缘部，所述第一边缘部包括第五侧和所述 第五侧水平方向上相对的第六侧，所述第一电极层位于所述第五侧，所述第一边缘延伸层及所述第一支撑层位于所述第六侧。
  15. 如权利要求14所述的体声波谐振装置，其特征在于，所述第一边缘部的厚度等于所述第一边缘延伸层和所述第一支撑层的厚度之和。
  16. 如权利要求14所述的体声波谐振装置，其特征在于，所述第一边缘部至少部分包围所述第一电极层。
  17. 如权利要求14所述的体声波谐振装置，其特征在于，所述第一电极层位于所述第一边缘部的内侧，所述第一边缘延伸层及所述第一支撑层位于所述第一边缘部的外侧。
  18. 如权利要求14所述的体声波谐振装置，其特征在于，所述第一边缘部与第二电极层具有第三重合部。
  19. 如权利要求14所述的体声波谐振装置，其特征在于，所述第一边缘延伸层及所述第一支撑层和所述第二电极层具有第四重合部，所述第四重合部的宽度等于所述第一边缘部的宽度。
  20. 如权利要求14所述的体声波谐振装置，其特征在于，所述第一边缘部呈多边形，所述第一边缘延伸层及所述第一支撑层与所述第一边缘部的至少一边相邻。
  21. 一种体声波谐振装置，其特征在于，包括：
    第一层，所述第一层包括空腔；
    第一电极层，所述第一电极层的至少一端位于所述空腔内；
    压电层，位于所述第一电极层上，覆盖所述空腔，所述压电层包括第一侧及与所述第一侧垂直方向上相对的第二侧，所述第一电极层位于所述第一侧；
    第二电极层，位于所述第二侧，位于所述压电层上，所述第二电极层上的与所述第一电极层的重合部位于所述空腔上方，对应所 述空腔；以及
    第二复合结构，位于所述第二侧，接触所述压电层，与所述第二电极层水平方向上相邻，所述第二复合结构与所述第一电极层无重合部或部分重合，所述第二复合结构包括第二边缘延伸层及第二支撑层，所述第二支撑层位于所述压电层与所述第二边缘延伸层之间，用于降低边缘容抗。
  22. 如权利要求21所述的体声波谐振装置，其特征在于，所述第二边缘延伸层的材料包括金属。
  23. 如权利要求21所述的体声波谐振装置，其特征在于，所述第二支撑层的介质包括以下之一：非金属材料、空气、真空。
  24. 如权利要求21所述的体声波谐振装置，其特征在于，所述第二电极层呈多边形，所述第二复合结构与所述第二电极层的至少一边相邻。
  25. 如权利要求21所述的体声波谐振装置，其特征在于，还包括：第二边缘结构，位于所述第二侧，接触所述压电层，所述第二边缘结构包括第三侧和所述第三侧水平方向上相对的第四侧，所述第二电极层位于所述第三侧，所述第二复合结构位于所述第四侧。
  26. 如权利要求25所述的体声波谐振装置，其特征在于，所述第二边缘结构至少部分包围所述第二电极层。
  27. 如权利要求25所述的体声波谐振装置，其特征在于，所述第二电极层位于所述第二边缘结构的内侧，所述第二复合结构位于所述第二边缘结构的外侧。
  28. 如权利要求25所述的体声波谐振装置，其特征在于，所述第二边缘结构包括第二边缘围边层，所述第二边缘围边层的材料包括金属，所述第二边缘围边层连接所述第二电极层，所述第二边缘围边层还连接所述第二边缘延伸层。
  29. 如权利要求28所述的体声波谐振装置，其特征在于，所述第二边缘结构还包括第二边缘支撑层，接触所述压电层，所述第二边缘支撑层位于所述压电层与所述第二边缘围边层之间，用于降低引入所述第二边缘围边层产生的寄生谐振的谐振频率。
  30. 如权利要求29所述的体声波谐振装置，其特征在于，所述第二边缘支撑层的介质包括以下之一：非金属材料、空气、真空。
  31. 如权利要求25所述的体声波谐振装置，其特征在于，所述第二边缘结构与第一电极层具有第一重合部。
  32. 如权利要求25所述的体声波谐振装置，其特征在于，所述第二复合结构与所述第一电极层具有第二重合部，所述第二重合部的宽度等于所述第二边缘结构的宽度。
  33. 如权利要求25所述的体声波谐振装置，其特征在于，所述第二边缘结构呈多边形，所述第二复合结构与所述第二边缘结构的至少一边相邻。
  34. 如权利要求21所述的体声波谐振装置，其特征在于，所述第二复合结构还包括第二边缘部，所述第二边缘部包括第五侧和所述第五侧水平方向上相对的第六侧，所述第二电极层位于所述第五侧，所述第二边缘延伸层及所述第二支撑层位于所述第六侧。
  35. 如权利要求34所述的体声波谐振装置，其特征在于，所述第二边缘部的厚度等于所述第二边缘延伸层和所述第二支撑层的厚度之和。
  36. 如权利要求34所述的体声波谐振装置，其特征在于，所述第二边缘部至少部分包围所述第二电极层。
  37. 如权利要求34所述的体声波谐振装置，其特征在于，所述第二电极层位于所述第二边缘部的内侧，所述第二边缘延伸层及所述第二支撑层位于所述第二边缘部的外侧。
  38. 如权利要求34所述的体声波谐振装置，其特征在于，所述第二边缘部与第一电极层具有第三重合部。
  39. 如权利要求34所述的体声波谐振装置，其特征在于，所述第二边缘延伸层及所述第二支撑层和所述第一电极层具有第四重合部，所述第四重合部的宽度等于所述第二边缘部的宽度。
  40. 如权利要求34所述的体声波谐振装置，其特征在于，所述第二边缘部呈多边形，所述第二边缘延伸层及所述第二支撑层与所述第二边缘部的至少一边相邻。
  41. 如权利要求1所述的体声波谐振装置，其特征在于，所述第一层包括：中间层，所述中间层包括所述空腔，其中，所述中间层的材料包括以下至少之一：聚合物、绝缘电介质、多晶硅。
  42. 一种滤波装置，其特征在于，包括：至少一个如权利要求1至41其中之一所述的体声波谐振装置。
  43. 一种射频前端装置，其特征在于，包括：功率放大装置与至少一个如权利要求42所述的滤波装置；所述功率放大装置与所述滤波装置连接。
  44. 一种射频前端装置，其特征在于，包括：低噪声放大装置与至少一个如权利要求42所述的滤波装置；所述低噪声放大装置与所述滤波装置连接。
  45. 一种射频前端装置，其特征在于，包括：多工装置，所述多工装置包括至少一个如权利要求42所述的滤波装置。
PCT/CN2022/116064 2021-09-08 2022-08-31 体声波谐振装置、滤波装置及射频前端装置 WO2023036026A1 (zh)

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