CN114128140A - 一种体声波谐振装置的形成方法 - Google Patents
一种体声波谐振装置的形成方法 Download PDFInfo
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- CN114128140A CN114128140A CN201980098512.7A CN201980098512A CN114128140A CN 114128140 A CN114128140 A CN 114128140A CN 201980098512 A CN201980098512 A CN 201980098512A CN 114128140 A CN114128140 A CN 114128140A
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Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
一种体声波谐振装置的形成方法，包括：形成第一层，包括：提供第一基底；形成压电层，位于第一基底上；形成第一电极层，位于压电层上；形成空腔预处理层，位于压电层上，用于形成空腔，空腔预处理层至少覆盖第一电极层的第一端，其中，第一层的第一侧对应第一基底侧，第一层的第二侧对应空腔预处理层侧；形成第二层，包括：提供第二基底；连接第一层和第二层，其中，第二层位于第二侧；去除第一基底，第一侧对应压电层侧；以及形成第二电极层，位于第一侧，接触压电层。本发明中，形成的压电层不包括明显转向的晶体，从而有助于提高谐振装置的机电耦合系数以及Q值。此外，第二基底加工和有源层加工可以分开进行，具有灵活性。
Description
PCT国内申请，说明书已公开。
Claims (39)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/104600 WO2021042343A1 (zh) | 2019-09-05 | 2019-09-05 | 一种体声波谐振装置的形成方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114128140A true CN114128140A (zh) | 2022-03-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980098512.7A Pending CN114128140A (zh) | 2019-09-05 | 2019-09-05 | 一种体声波谐振装置的形成方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20220407487A1 (zh) |
| EP (1) | EP4027515A4 (zh) |
| CN (1) | CN114128140A (zh) |
| WO (1) | WO2021042343A1 (zh) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107809221A (zh) * | 2017-09-27 | 2018-03-16 | 佛山市艾佛光通科技有限公司 | 一种空腔型薄膜体声波谐振器及其制备方法 |
| CN109905098A (zh) * | 2019-03-11 | 2019-06-18 | 重庆邮电大学 | 一种薄膜体声波谐振器及制备方法 |
| CN110011632A (zh) * | 2019-03-13 | 2019-07-12 | 电子科技大学 | 单晶薄膜体声波谐振器的制备方法及体声波谐振器 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100662865B1 (ko) * | 2003-10-08 | 2007-01-02 | 삼성전자주식회사 | 박막 벌크 음향 공진기 및 그 제조방법 |
| JP2006186412A (ja) * | 2004-12-24 | 2006-07-13 | Toshiba Corp | 薄膜圧電共振器およびその製造方法 |
| CN101908865B (zh) * | 2010-08-20 | 2014-02-12 | 庞慰 | 体波谐振器及其加工方法 |
| CN107222181A (zh) * | 2016-12-29 | 2017-09-29 | 杭州左蓝微电子技术有限公司 | 基于soi基片的薄膜体声波谐振器及其制备方法 |
-
2019
- 2019-09-05 US US17/640,338 patent/US20220407487A1/en active Pending
- 2019-09-05 WO PCT/CN2019/104600 patent/WO2021042343A1/zh unknown
- 2019-09-05 EP EP19944046.2A patent/EP4027515A4/en active Pending
- 2019-09-05 CN CN201980098512.7A patent/CN114128140A/zh active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107809221A (zh) * | 2017-09-27 | 2018-03-16 | 佛山市艾佛光通科技有限公司 | 一种空腔型薄膜体声波谐振器及其制备方法 |
| CN109905098A (zh) * | 2019-03-11 | 2019-06-18 | 重庆邮电大学 | 一种薄膜体声波谐振器及制备方法 |
| CN110011632A (zh) * | 2019-03-13 | 2019-07-12 | 电子科技大学 | 单晶薄膜体声波谐振器的制备方法及体声波谐振器 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021042343A1 (zh) | 2021-03-11 |
| US20220407487A1 (en) | 2022-12-22 |
| EP4027515A1 (en) | 2022-07-13 |
| EP4027515A4 (en) | 2023-06-14 |
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