CN114334882A - 一种多孔纳米铜膜在电子器件封装互连中的应用 - Google Patents

一种多孔纳米铜膜在电子器件封装互连中的应用 Download PDF

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Publication number
CN114334882A
CN114334882A CN202111467010.2A CN202111467010A CN114334882A CN 114334882 A CN114334882 A CN 114334882A CN 202111467010 A CN202111467010 A CN 202111467010A CN 114334882 A CN114334882 A CN 114334882A
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CN
China
Prior art keywords
copper
film
porous nano
porous
use according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202111467010.2A
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English (en)
Chinese (zh)
Inventor
朱朋莉
王春成
孙蓉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Institute of Advanced Technology of CAS
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Shenzhen Institute of Advanced Technology of CAS
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Application filed by Shenzhen Institute of Advanced Technology of CAS filed Critical Shenzhen Institute of Advanced Technology of CAS
Priority to CN202111467010.2A priority Critical patent/CN114334882A/zh
Priority to PCT/CN2021/138142 priority patent/WO2023097787A1/fr
Publication of CN114334882A publication Critical patent/CN114334882A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Powder Metallurgy (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
CN202111467010.2A 2021-12-02 2021-12-02 一种多孔纳米铜膜在电子器件封装互连中的应用 Pending CN114334882A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202111467010.2A CN114334882A (zh) 2021-12-02 2021-12-02 一种多孔纳米铜膜在电子器件封装互连中的应用
PCT/CN2021/138142 WO2023097787A1 (fr) 2021-12-02 2021-12-15 Application d'un nano-film de cuivre poreux dans l'emballage et l'interconnexion de dispositifs électroniques

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111467010.2A CN114334882A (zh) 2021-12-02 2021-12-02 一种多孔纳米铜膜在电子器件封装互连中的应用

Publications (1)

Publication Number Publication Date
CN114334882A true CN114334882A (zh) 2022-04-12

Family

ID=81049318

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111467010.2A Pending CN114334882A (zh) 2021-12-02 2021-12-02 一种多孔纳米铜膜在电子器件封装互连中的应用

Country Status (2)

Country Link
CN (1) CN114334882A (fr)
WO (1) WO2023097787A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117059503B (zh) * 2023-08-11 2024-04-02 徐州得驰电子科技有限公司 一种基于金属有机源焊接的方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107127468B (zh) * 2017-05-05 2020-02-14 哈尔滨工业大学深圳研究生院 一种基于泡沫铜的高温互连焊点的制备方法
US10553555B2 (en) * 2017-08-25 2020-02-04 International Business Machines Corporation Non-porous copper to copper interconnect
CN108091633A (zh) * 2017-12-13 2018-05-29 广东工业大学 纳米多孔铜互连层结构及其制备方法
CN108385069B (zh) * 2018-03-30 2020-07-28 西安理工大学 一种超精细纳米多孔铜膜的制备方法
CN109295327B (zh) * 2018-11-12 2020-06-09 北京航空航天大学 一种微米多孔铜及其制备方法与应用
CN111607811A (zh) * 2020-07-06 2020-09-01 苏州清飙科技有限公司 铜铜键合材料的制备方法及其应用

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Publication number Publication date
WO2023097787A1 (fr) 2023-06-08

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