CN114334721A - Abnormal reworking method for thinning back of wafer - Google Patents
Abnormal reworking method for thinning back of wafer Download PDFInfo
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- CN114334721A CN114334721A CN202111537647.4A CN202111537647A CN114334721A CN 114334721 A CN114334721 A CN 114334721A CN 202111537647 A CN202111537647 A CN 202111537647A CN 114334721 A CN114334721 A CN 114334721A
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Abstract
The abnormal rework method for thinning the back of the wafer is used for reworking the abnormal wafer of which the back thinning is not finished. The abnormal rework method comprises the following steps: providing a support sheet with the same radial dimension as the abnormal wafer; conveying the back of the support sheet upwards to an alignment workbench; detecting the center of the back of the support sheet and suspending the wafer back thinning machine; forming a water film on the back surface of the support sheet; placing the abnormal wafer on the back surface of the support sheet with the front surface facing downwards, enabling the edges of the abnormal wafer and the support sheet to be overlapped, and adhering the abnormal wafer and the support sheet by a water film; starting a wafer back thinning machine, grabbing the abnormal wafer and the support sheet from the back of the abnormal wafer by a conveying manipulator, and suspending the wafer back thinning machine after the set height is lifted; peeling the support wafer from the front side of the abnormal wafer; and starting the wafer back thinning machine again, and transmitting the abnormal wafer to the corresponding grinding workbench. Therefore, the abnormal wafer can be reworked, and the yield of products is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an abnormal reworking method for thinning the back of a wafer.
Background
With the development of semiconductor technology, integrated circuit processes have begun to begin 5nm and even 3nm research. As feature sizes decrease, the number of transistors per unit area of an integrated circuit increases, and the functions of the integrated circuit become more powerful. A wafer back thinning process is provided when key problems of reducing the thermal resistance of devices in an integrated circuit, well performing heat dissipation and cooling of the devices and the like are discussed.
One commonly used wafer backside thinning process is the Taiko process. When the back surface of the wafer is ground by the TaiKo process, the edge part of the periphery of the wafer is reserved, and only the inner circle (namely the central area of the back surface of the wafer) is ground and thinned. Currently in the Taiko process, wafers are ground and lapped by two grinding wheels, Z1 and Z2, in sequence. However, in the thinning process, due to the alarm or the fault of the back-of-wafer thinning machine, the wafer cannot be continuously transferred to the Z2 grinding wheel for fine grinding after being roughly ground by the Z1 grinding wheel, and in this case, an abnormal wafer which is to be scrapped is generated. How to rework the abnormal wafer whose back is not thinned needs to be solved urgently.
Disclosure of Invention
The invention provides an abnormal rework method for thinning the back of a wafer, which can rework abnormal wafers which are not thinned, and is beneficial to improving the yield of products.
In order to achieve the above object, the present invention provides an abnormal rework method for wafer back thinning, which is used for reworking an abnormal wafer whose back thinning has not been completed. The abnormal rework method comprises the following steps:
providing a support sheet, wherein the radial sizes of the support sheet and the abnormal wafer are the same;
conveying the supporting sheet to an alignment workbench of a wafer back thinning machine table, and placing the supporting sheet on the alignment workbench with the back side facing upwards;
the back of the wafer thinning machine detects the center of the back of the support sheet, and the back of the wafer thinning machine is suspended after the center position is obtained;
forming a water film on the back surface of the support sheet;
placing the abnormal wafer on the back surface of the support sheet with the front surface facing downwards, enabling the edges of the abnormal wafer and the support sheet to be overlapped, and enabling the water film to bond the abnormal wafer and the support sheet;
starting the wafer back thinning machine, grabbing the abnormal wafer and the support sheet from the back of the abnormal wafer by a conveying manipulator, and suspending the wafer back thinning machine after the conveying manipulator is lifted to a set height;
peeling the support wafer from the front side of the abnormal wafer;
and starting the wafer back thinning machine again, and transmitting the abnormal wafer to the corresponding grinding workbench to continuously carry out back thinning treatment on the abnormal wafer.
Optionally, the method for forming the water film on the back surface of the support sheet includes: soaking the dust-free cloth with water; and extruding the dust-free cloth to make the water part on the dust-free cloth drop on the back of the support sheet to form the water film.
Optionally, the edges of the support sheet and the abnormal wafer are provided with notches, and the notches of the support sheet and the abnormal wafer are the same in size; the method for placing the abnormal wafer on the back side of the support sheet with the front side facing downwards comprises the following steps: so that the notch of the abnormal wafer coincides with the notch of the support sheet.
Optionally, the method for peeling the support wafer from the front side of the abnormal wafer comprises: pushing the support sheet out of the front side of the abnormal wafer in a plane where the back side of the support sheet is located.
Optionally, the method for peeling the support wafer from the front side of the abnormal wafer comprises: and blowing compressed air from the side surfaces of the support sheet and the abnormal wafer, wherein the compressed air blows at least part of the water film out from between the support sheet and the abnormal wafer, and the support sheet is separated from the abnormal wafer.
Optionally, the process used for thinning the back surface of the wafer is a Taiko process, and the Taiko process includes: rough grinding a central region of a back surface of a wafer and finish grinding the central region of the back surface of the wafer;
in the Taiko process, the wafer whose back side thinning is not completed due to the abnormality is an abnormal wafer.
Optionally, when the rough grinding is completed and the fine grinding is not performed on the abnormal wafer, the method of transferring the abnormal wafer to the corresponding grinding table includes: the conveying mechanical arm transfers the abnormal wafer to a transfer workbench; and the transfer workbench sends the abnormal wafer into a fine grinding workbench.
Optionally, when the rough grinding is not completed on the abnormal wafer, the method for transferring the abnormal wafer to the corresponding grinding table includes: the conveying mechanical arm transfers the abnormal wafer to a transfer workbench; and the transfer workbench sends the abnormal wafer into the rough grinding workbench.
Optionally, the support sheet is a support wafer, a glass plate or a resin plate.
Optionally, the back surface of the support sheet is covered with a protective film, and the water film is formed on the protective film.
In the abnormal rework method for thinning the back of the wafer, the support sheet with the same radial size as the abnormal wafer is provided, then the center of the back of the support sheet is detected (namely the back geometric centering is carried out on the support sheet), the back of the support sheet is bonded with the front of the abnormal wafer by utilizing the water film, the edges of the abnormal wafer and the support sheet are overlapped, the back geometric centering of the abnormal wafer can be realized, then the support sheet is peeled from the front of the abnormal wafer, and further the back thinning treatment can be continuously carried out on the abnormal wafer. In other words, in the abnormal rework method for thinning the back surface of the wafer, the support sheet is used for replacing the abnormal wafer to realize the geometric centering of the back surface, and the abnormal wafer and the support sheet bonded through the water film are easy to separate and can not pollute the abnormal wafer, so that the rework of the abnormal wafer whose back surface is not thinned can be realized, the scrap is reduced, and the product yield is improved.
Drawings
FIG. 1 is a flow chart of a process for thinning the backside of a wafer using the Taiko process.
FIG. 2 is a cross-sectional view of an anomalous wafer.
Fig. 3 is a flowchart illustrating an abnormal rework method for wafer back side thinning according to an embodiment of the invention.
Detailed Description
The abnormal rework method for wafer back side thinning proposed by the present invention is further explained in detail with reference to the drawings and the specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
FIG. 1 is a flow chart of a process for thinning the backside of a wafer using the Taiko process. As shown in fig. 1, the normal process for thinning the back side of the wafer by using the Taiko process includes: conveying the wafer placed in a wafer transfer pod (FOUP) into a wafer back thinning machine; geometrically centering the back of the wafer by using the back thinning machine table to determine the circle center of the back of the wafer; the wafer is sent into a rough grinding workbench, and a first grinding wheel (Z1) performs rough grinding on the central area of the back surface of the wafer; the wafer is fed to a finish grinding table and a second grinding wheel (Z2) grinds the center region of the back surface of the wafer.
In the process of back thinning the wafer by utilizing the Taiko process, due to the reasons of alarm or fault of a wafer back thinning machine and the like, the wafer which is not ground (namely, the back thinning is not finished) is forced to stop grinding, and an abnormal wafer is generated. FIG. 2 is a cross-sectional view of an anomalous wafer. As shown in fig. 2, the raised Taiko ring 101 is formed on the back surface of the abnormal wafer 100, and the back surface of the abnormal wafer 100 is no longer a flat surface, so that the back surface of the abnormal wafer 100 cannot be precisely geometrically centered, and the abnormal wafer 100 cannot be reworked.
In order to rework an abnormal wafer whose back side is not thinned, the present embodiment provides an abnormal rework method for thinning the back side of the wafer. The abnormal reworking method is used for performing abnormal reworking on the abnormal wafer with the incomplete back thinning.
The process adopted by the thinning of the back surface of the wafer can be a Taiko process. The Taiko process may include: the center region of the back surface of the wafer is coarsely ground and the center region of the back surface of the wafer is finely ground. In the Taiko process, a wafer whose back side thinning is not completed due to an abnormality is an abnormal wafer. The back surface of the abnormal wafer is not flat, and the geometrical centering of the back surface is not easy to realize. But not limited thereto, the abnormal wafer may be generated by abnormal stop of other polishing processes.
Fig. 3 is a flowchart illustrating an abnormal rework method for wafer back side thinning according to an embodiment of the invention. As shown in fig. 3, the abnormal rework method includes:
s1, providing a support sheet, wherein the radial sizes of the support sheet and the abnormal wafer are the same;
s2, conveying the support sheet to an alignment workbench of a wafer back thinning machine, and placing the support sheet on the alignment workbench with the back side facing upwards;
s3, the back of the support sheet is detected by the back thinning machine, and after the center position is obtained, the back thinning machine is suspended;
s4, forming a water film on the back surface of the support sheet;
s5, placing the abnormal wafer on the back surface of the support sheet with the front surface facing downwards, enabling the edges of the abnormal wafer and the support sheet to be overlapped, and enabling the water film to bond the abnormal wafer and the support sheet;
s6, starting the wafer back thinning machine, grabbing the abnormal wafer and the support chip from the back of the abnormal wafer by a conveying manipulator, and suspending the wafer back thinning machine after the conveying manipulator is lifted to a set height;
s7, peeling the supporting chip from the front side of the abnormal wafer;
and S8, restarting the wafer back thinning machine, and transferring the abnormal wafer to the corresponding grinding workbench to continue to perform back thinning treatment on the abnormal wafer.
Specifically, in this embodiment, the support sheet may be a support wafer, a glass plate, a resin plate, or the like, and a radial dimension of the support sheet is the same as a radial dimension of the abnormal chip, so that the support sheet is used to replace the abnormal chip to realize back geometric centering. The back surface of the supporting sheet is a flat surface so as to be convenient for geometric centering of the back surface of the supporting sheet subsequently. The support piece and the abnormal wafer may have notches (Notch) at their edges, and the notches are the same size as the Notch. To enhance the stiffness of the support sheet, the support sheet may have a thickness greater than a thickness of the anomalous wafer.
In this embodiment, the rework of the abnormal wafer by the back wafer thinning machine can be controlled by a rework program arranged in the back wafer thinning machine. But not limited thereto, the abnormal wafer may be reworked by manually controlling the back wafer thinning machine.
In this embodiment, in step S2, the method for transferring the supporting sheet to the alignment table of the back side thinning apparatus may include: placing the support wafer in an empty pod; and clicking a rework program in the crystal back thinning machine table to operate, transferring the support sheet to an alignment workbench from the wafer transfer box, and placing the back face of the support sheet upwards on the alignment workbench.
And step S3 is executed, the back side of the support sheet is detected by the back side thinning machine (i.e. the back side of the support sheet is geometrically centered by the back side thinning machine), and the back side of the support sheet is temporarily stopped after the position of the back side center of the support sheet is obtained. It should be noted that, in an embodiment, after the back side of the supporting sheet is detected, the back side thinning apparatus stops operating only by pressing the pause key after the back side of the supporting sheet is detected.
Step S4 is executed to form a water film on the back surface of the support sheet. In this embodiment, the method for forming the water film on the back surface of the support sheet may include: soaking the dust-free cloth with water; opening a baffle of back of crystal attenuate board, will dustless cloth stretches into the back top of backing sheet, the extrusion dustless cloth makes water part on the dustless cloth drips and forms on the back of backing sheet the water film. In order to improve the adhesive force of the water film, the water dropped from the dust-free cloth can be uniformly distributed on the back surface of the support sheet. But not limited thereto, water may be uniformly dropped on the back surface of the support sheet using a dropping tube to form a water film.
And step S5, placing the abnormal wafer on the back surface of the support sheet with the front surface facing downwards, and making the edges of the abnormal wafer and the support sheet coincide, wherein the water film bonds the abnormal wafer and the support sheet. The water film has a surface tension, and when the front surface of the abnormal wafer is placed on the water film, the surface tension of the water film causes the abnormal wafer to adhere to the support wafer.
In order to improve the centering accuracy of the abnormal wafer, in this embodiment, the method for placing the abnormal wafer on the back surface of the support sheet with the front surface facing downward may further include: so that the notch of the abnormal wafer coincides with the notch of the support sheet.
In order to enhance the adhesion between the anomalous wafer and the support wafer, in this embodiment, after the anomalous wafer is placed on the support wafer, the anomalous wafer may be pressed downward to reduce the gap between the anomalous wafer and the support wafer.
In this embodiment, a pattern or a device may be formed on the front surface of the abnormal wafer, and in order to prevent particles and the like on the back surface of the support sheet from damaging the abnormal wafer, a protective film may be formed on the back surface of the support sheet, the protective film covers the back surface of the support sheet, and the water film may be formed on the protective film. The protective film may be a photoresist film. But is not limited thereto, the thickness and material of the protective film may be selected as desired.
And executing the step S6, starting the crystal back thinning machine table, grabbing the abnormal wafer and the support piece from the back of the abnormal wafer by the conveying manipulator (of the crystal back thinning machine table), and suspending the crystal back thinning machine table after the conveying manipulator lifts the set height. It should be noted that, in an embodiment, when the transfer robot starts to move and grab the abnormal wafer and the support chip, the transfer robot grabs the abnormal wafer and the support chip and stops before moving to the transfer table as long as the pause key is pressed.
In this embodiment, the transfer robot may grasp the abnormal wafer and the support wafer by vacuum-sucking the back surface of the abnormal wafer. After the grabbing, in order to facilitate the subsequent peeling of the supporting chip from the front side of the abnormal wafer, the conveying mechanical arm raises the abnormal wafer and the supporting chip by a set height. The set height is not suitable to be too high, so that the support sheet is prevented from falling from a high position and being broken when being separated from the abnormal wafer; the set height should not be too low to facilitate separation of the support sheet from the anomalous wafer.
Step S7 is executed to peel the supporting chip from the front side of the abnormal wafer. In this embodiment, the method of peeling the support sheet from the front surface of the abnormal wafer may include: after the conveying manipulator stops moving, a baffle of a wafer back thinning machine is opened, the supporting sheet is pushed out of the front side of the abnormal wafer in the plane where the back side of the supporting sheet is located, or the supporting sheet is pulled out of the front side of the abnormal wafer from the horizontal direction.
It should be noted that, since the abnormal wafer is thin, if the supporting wafer and the abnormal wafer are separated from each other in the vertical direction, the abnormal wafer is easily broken by the tensile force of the water film, and thus the abnormal wafer and the supporting wafer are separated from each other in the horizontal direction in this embodiment. In addition, since the abnormal wafer is thin and since the back surface of the abnormal wafer has the Taiko ring, the suction of the transfer robot to the back surface of the abnormal wafer is not very strong (i.e., the vacuum of the transfer robot to the abnormal wafer is not complete), when separating the support wafer and the abnormal wafer, it is necessary to separate the abnormal wafer slowly and not move the abnormal wafer so as to avoid the abnormal wafer from falling off due to the transfer robot not sucking the abnormal wafer.
In other embodiments, the method of peeling the support wafer from the front side of the anomalous wafer may include: and blowing compressed air from the side surfaces of the support sheet and the abnormal wafer, wherein the compressed air blows at least part of the water film out from between the support sheet and the abnormal wafer, and the support sheet is separated from the abnormal wafer. Therefore, the abnormal wafer and the supporting wafer can be prevented from being separated manually, and the error of personnel can be reduced. The flow rate of the compressed air, the area of the side surfaces of the support wafer and the abnormal wafer, and the angle between the flow direction of the compressed air and the front surface of the abnormal wafer may be adjusted as necessary, but it is necessary to ensure that the compressed air does not blow off the abnormal wafer from the transfer robot.
And after the supporting sheet is stripped from the front side of the abnormal wafer, executing the step S8, restarting the wafer back thinning machine, and transferring the abnormal wafer to the corresponding grinding workbench to continue to carry out back thinning treatment on the abnormal wafer.
Specifically, when the rough grinding is not completed on the abnormal wafer, the conveying manipulator transfers the abnormal wafer to a transfer workbench; the transfer workbench sends the abnormal wafer into a rough grinding workbench, and a first grinding wheel (Z1) in a wafer back thinning machine platform grinds the abnormal wafer to a set rough grinding amount; and transferring the abnormal wafer to a fine grinding workbench, and finely grinding the abnormal wafer by using a second grinding wheel (Z2) of a back thinning machine table to finish the back thinning treatment of the abnormal wafer. It should be noted that, when the abnormal wafer has already been partially roughly ground and the entire rough grinding is not completed, before performing the rework process, the grinding amount of the abnormal wafer that has been completed is determined, and the grinding amount of the first grinding wheel to the abnormal wafer needs to be set in the rework process (for example, the grinding amount can be adjusted by adjusting the grinding time), so that the rough grinding amount reaches the set rough grinding amount after the abnormal wafer is reworked by the first grinding wheel.
When the abnormal wafer has completed the rough grinding and is not finished, the transfer robot transfers the abnormal wafer to a transfer table; the transfer workbench sends the abnormal wafer into a fine grinding workbench, and a second grinding wheel (Z2) in the wafer back thinning machine platform grinds the abnormal wafer accurately to finish the back thinning treatment of the abnormal wafer.
When the abnormal wafer has been partially ground and not completely ground, before performing rework, it is necessary to determine the grinding amount of the abnormal wafer that has been completed, and to set the grinding amount of the second grinding wheel to the abnormal wafer in the rework procedure (for example, the grinding amount may be adjusted by adjusting the grinding time) so that the grinding amount reaches the set grinding amount after the abnormal wafer is reworked by the second grinding wheel.
After the rework of the abnormal wafer is completed, the reworked wafer can be detected, and whether the reworked wafer meets the process requirements or not is confirmed.
In the abnormal rework method for thinning the back of the wafer according to the embodiment, the support sheet with the same radial size as the abnormal wafer is provided, the center (for example, the center) of the back of the support sheet is detected, the back of the support sheet is bonded with the front of the abnormal wafer by using the water film, the edges of the abnormal wafer and the support sheet are overlapped, the back of the abnormal wafer can be geometrically centered, the support sheet is peeled from the front of the abnormal wafer, and the back thinning treatment of the abnormal wafer can be continued. That is to say, in the abnormal rework method for wafer back side thinning of the present embodiment, the support sheet is used to replace the abnormal wafer to achieve the geometric centering of the back side, and the abnormal wafer and the support sheet bonded by the water film are easy to separate and will not pollute the abnormal wafer, so that the abnormal wafer whose back side thinning is not completed can be reworked, which is helpful to reduce scrap and improve the yield of products.
The above description is only for the purpose of describing the preferred embodiments of the present invention and is not intended to limit the scope of the claims of the present invention, and any person skilled in the art can make possible the variations and modifications of the technical solutions of the present invention using the methods and technical contents disclosed above without departing from the spirit and scope of the present invention, and therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention belong to the protection scope of the technical solutions of the present invention.
Claims (10)
1. An abnormal rework method for wafer back thinning is used for reworking an abnormal wafer whose back thinning is not completed, and is characterized by comprising the following steps:
providing a support sheet, wherein the radial sizes of the support sheet and the abnormal wafer are the same;
conveying the supporting sheet to an alignment workbench of a wafer back thinning machine table, and placing the supporting sheet on the alignment workbench with the back side facing upwards;
the back of the wafer thinning machine detects the center of the back of the support sheet, and the back of the wafer thinning machine is suspended after the center position is obtained;
forming a water film on the back surface of the support sheet;
placing the abnormal wafer on the back surface of the support sheet with the front surface facing downwards, enabling the edges of the abnormal wafer and the support sheet to be overlapped, and enabling the water film to bond the abnormal wafer and the support sheet;
starting the wafer back thinning machine, grabbing the abnormal wafer and the support sheet from the back of the abnormal wafer by a conveying manipulator, and suspending the wafer back thinning machine after the conveying manipulator is lifted to a set height;
peeling the support wafer from the front side of the abnormal wafer;
and starting the wafer back thinning machine again, and transmitting the abnormal wafer to the corresponding grinding workbench to continuously carry out back thinning treatment on the abnormal wafer.
2. The abnormal rework method of claim 1, wherein the method of forming a water film on the back side of the support sheet comprises:
soaking the dust-free cloth with water;
and extruding the dust-free cloth to make the water part on the dust-free cloth drop on the back of the support sheet to form the water film.
3. The abnormal rework method of claim 1, wherein the support sheet and the abnormal wafer have notches at their edges, and the notches of the support sheet and the abnormal wafer are the same size; the method for placing the abnormal wafer on the back side of the support sheet with the front side facing downwards comprises the following steps:
so that the notch of the abnormal wafer coincides with the notch of the support sheet.
4. The abnormal rework method of claim 1, wherein the method of peeling the support sheet from the front side of the abnormal wafer comprises:
pushing the support sheet out of the front side of the abnormal wafer in a plane where the back side of the support sheet is located.
5. The abnormal rework method of claim 1, wherein the method of peeling the support sheet from the front side of the abnormal wafer comprises:
and blowing compressed air from the side surfaces of the support sheet and the abnormal wafer, wherein the compressed air blows at least part of the water film out from between the support sheet and the abnormal wafer, and the support sheet is separated from the abnormal wafer.
6. The abnormal rework method of claim 1, wherein the wafer backside thinning employs a process of Taiko, the Taiko process comprising: rough grinding a central region of a back surface of a wafer and finish grinding the central region of the back surface of the wafer;
in the Taiko process, the wafer whose back side thinning is not completed due to the abnormality is an abnormal wafer.
7. The abnormal rework method of claim 6, wherein when the abnormal wafer has completed the rough grinding and has not undergone the finish grinding, the method of transferring the abnormal wafer to the corresponding grinding table comprises:
the conveying mechanical arm transfers the abnormal wafer to a transfer workbench;
and the transfer workbench sends the abnormal wafer into a fine grinding workbench.
8. The abnormal rework method of claim 6, wherein when the abnormal wafer does not complete the rough grinding, the method of transferring the abnormal wafer to the corresponding grinding table comprises:
the conveying mechanical arm transfers the abnormal wafer to a transfer workbench;
and the transfer workbench sends the abnormal wafer into the rough grinding workbench.
9. The rework method of any of claims 1-8, wherein the support sheet is a support wafer, a glass sheet, or a resin sheet.
10. The abnormal rework method of any one of claims 1 to 8, wherein a back surface of the support sheet is covered with a protective film, and the water film is formed on the protective film.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117672939A (en) * | 2024-02-02 | 2024-03-08 | 粤芯半导体技术股份有限公司 | Taiko wafer slicing method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117672939A (en) * | 2024-02-02 | 2024-03-08 | 粤芯半导体技术股份有限公司 | Taiko wafer slicing method |
| CN117672939B (en) * | 2024-02-02 | 2024-04-16 | 粤芯半导体技术股份有限公司 | Taiko wafer slicing method |
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